Low temperature molybdenum deposition assisted by silicon-containing reactants
Номер патента: EP4449479A1
Опубликовано: 23-10-2024
Автор(ы): Chiukin Steven Lai, David Joseph Mandia, Kyle Jordan BLAKENEY
Принадлежит: Lam Research Corp
Опубликовано: 23-10-2024
Автор(ы): Chiukin Steven Lai, David Joseph Mandia, Kyle Jordan BLAKENEY
Принадлежит: Lam Research Corp
Реферат: Molybdenum-containing films are deposited on semiconductor substrates at relatively low temperatures of between about 100 and about 500 ºC, such as between about 200 and about 450 ºC. For example, molybdenum metal can be deposited at this temperature on a substrate having exposed metal and exposed dielectric in a substantially non-selective manner. In one implementation, a substrate having a recessed feature is provided, where the recessed feature has an exposed dielectric on the sidewalls and an exposed metal on the bottom. The substrate is exposed to a molybdenum-containing precursor, a reducing agent, and a silicon-containing reagent, to thereby reduce the molybdenum-containing precursor and form a molybdenum-containing layer that includes metallic molybdenum. The use of the silicon-containing reactant leads to a reduction in on-metal/on-dielectric selectivity of molybdenum deposition.
Low temperature molybdenum deposition assisted by silicon-containing reactants
Номер патента: WO2023114648A1. Автор: Kyle Jordan BLAKENEY,Chiukin Steven Lai,David Joseph Mandia. Владелец: LAM RESEARCH CORPORATION. Дата публикации: 2023-06-22.