Magnetic random access memory device and method for fabricating the same.

Magnetic random access memory device and method for fabricating the same

Номер патента: US12089504B2
Опубликовано: 10-09-2024
Автор(ы): Hsiang-Wen Ke, Jin-Yan Chiou, Wei-Chuan Tsai, Yen-Tsai Yi
Принадлежит: United Microelectronics Corp
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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