HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING FIELD SHAPING LAYER AND METHOD OF FABRICATING THE SAME.

HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING FIELD SHAPING LAYER AND METHOD OF FABRICATING THE SAME

Номер патента: US20130196480A1
Опубликовано: 01-08-2013
Автор(ы): Choi Yong-cheol, JEON Chang-Ki, KIM Min-suk
Принадлежит: FAIRCHILD KOREA SEMICONDUCTOR LTD.
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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