METHOD FOR MANUFACTURING A TRANSISTOR WITH INSULATED GRID AND ARCHITECTURE OF THE SUBSTRATE TYPE ON INSULATION, AND CORRESPONDING TRANSISTOR
Номер патента: FR2821483B1
Опубликовано: 09-07-2004
Автор(ы): Alexandre Villaret, Stephane Monfray, Thomas Skotniki
Принадлежит: STMICROELECTRONICS SA
Опубликовано: 09-07-2004
Автор(ы): Alexandre Villaret, Stephane Monfray, Thomas Skotniki
Принадлежит: STMICROELECTRONICS SA
Semiconductor structure and method for manufacturing same
Номер патента: US20210351280A1. Автор: LI ZHANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-11-11.