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  • Architecture à transistors n et p superposes a structure de canal formee de nanofils

Architecture à transistors n et p superposes a structure de canal formee de nanofils

Номер патента: FR3090998B1
Опубликовано: 09-12-2022
Автор(ы): Bernard Previtali, Jean-Pierre Colinge, Sylvain Barraud
Принадлежит: Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Method For Producing A Porcelain Enamel Logo On A Porcelain Enamel Background On A Grill Component With Preselected Colors

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