Vapor delivery device and method for making and using same

Technical Field

The invention relates to vapor delivery device, method of manufacturing the same and method of use thereof. Specifically, the present invention relates to the solid precursor compound is delivered to the reactor in the vapor phase of high-output, large-capacity transmission device.

Background Art

Including resolution III-V group compound semiconductor used in a lot of electronic device and the production of optoelectronic device, for example, for laser, light emitting diode (LED), such as the production of a photoelectric detector. These materials are used for making different composition, the thickness of a few micro-meters to a few micro-meters of different single crystal layer. The use of organic metal compound chemical vapor deposition (CVD) method is widely used for depositing metal thin film or semiconductor thin film, for example, used for depositing section III-V group compound film. These organic metal compound can be liquid or solid.

In the CVD process, reactive gas stream will normally be delivered to the reactor, in the electronic device and the opto-electronic device to the deposition of the film. These reactive gas precursor compounds by vapor-saturated carrier gas a (for example, hydrogen gas). When the precursor compound is liquid, on the conveying device (in other words, bubbler) (bubbling) in the carrier gas through the liquid precursor compound, the reactive gas flow.

However, solid precursor is placed within the cylindrical container or pot, below their melting point of the heating is performed at a constant temperature, so that these solid precursor evaporation. The use of the carrier gas from the solid precursor vapor, transmitting it to a deposition system. According to specific circumstances, so that the carrier gas and the granular solid precursor through the particulate solid precursor undergoes a sublimation would be lead to the formation of cavities in the particle bed. The extent of the cavity depends on the velocity of flow of the carrier gas. In the extremely low velocity of flow is not usually under the condition of cavitation will be observed. Under the low the carrier gas flow rate conditions, sublimation in place on the surface of the particulate solid, the thickness of the drive in fact zero, in other words, the drive is almost two-dimensional. Therefore, the exposed on the whole surface of the carrier gas, sublimation rate is uniform.

On the other hand, higher drive carrier gas flow rate will be of the boundary of the granular solid precursor bed within pushed into a deeper position, the thickness of the drive is no longer equal to zero. Granular material in fact always will not be uniform, on the surface of the drive therefore, sublimation rate will change. Higher the evaporation rate will result in relatively rapid material erosion and cavity forms. These cavity along the general direction of the flow of carrier gas. Finally, cavity formed through the entire granular solid precursor bed of the channel. At this moment, the states the carrier gas meeting along the detour through the particulate solid precursor bed, controlled sublimation stop.

In the used for conventional bubbler solid precursor delivery time in the container, will result in the formation of the channel is very poor instability delivery rate. The irradiation system may result in unstable water, the precursor vapor flow rate is not uniform, when using solid organic metal precursor compound is particularly evident when the. Non-uniform organic metal vapor phase concentration of the metal to a receiving machine air-phase epitaxy (MOVPE) growth in the reactor the composition of the film, in particular a negative impact on the composition of the semiconductor film.

In order to solve the problem of how to the solid precursor compound the problem of conveying to the reactor, it has been the development of a number of conveying device. Horsky disclosed in United States Patent such as section 20080047607 of a kind described in for the sublimated the stability of the precursor vapor flow conveying into the vacuum chamber and the vapor delivery system, the system including the evaporator of the solid precursor, mechanical throttle valve, leading to the vacuum chamber and the pressure of the steam pipeline. Based on the delivery system includes the vapor sensing and control system of the throttle valve, the system can provide a regulator of the heater for the evaporator temperature set point of the evaporator, the evaporator heater regulator of the temperature of the evaporator can be maintained at a set point. The sensing and control system storing at least one predetermined valve displacement, the displacement required that the conduction of the throttle valve is the upper limit.

The sensing and control system is configured to monitor the position of the throttle valve, when detecting that the valve close to or reaches the displacement time, the sensing and control device system will rise of the heater temperature set point of the regulator, an increase of the vapor generated, the vapor pressure upstream of the throttle valve rises, so that by this can be a closed-loop control of the throttle valve to return to the valve the conduction of the lower position. The vapor delivery system includes suitable for operation of a lapse of a predetermined increment of rise of temperature, when the detection of the throttle valve is close to the time of displacement or reach, the sensing and control system to play a role, so that the evaporator temperature set point reference table is increased to the next step. However, the system will be the velocity of flow of the solid vapor is limited to the 0.1-1sccm (standard cubic cm/minute), the flow rate is very low.

Chen, and others in the United States Patent discloses section 2008/0044573 of a kind described in detail in the used for monitoring and control in processing the indoor to the precursor from the ampoule output method. In this method, to 1st 1st is provided with a flow rate of carrier gas from the container to flow through the of chemical precursors, 1st precursor gas formed. The method also includes making the flow speed and the 2nd 2nd 1st carrier gas in the combined precursor gas, precursor gas form the 2nd, 2nd precursor gas in the measurement of the concentration of chemical precursors, and calculating the mass velocity of the chemical precursors.

However, the method also includes a number of shortcomings. One of the shortcomings is that, due to the use of flow in the opposite direction of the carrier gas and carrier gas 2nd 1st, 2nd will cause chemical precursor and uniform mixing between the carrier gas. When using the Chen when flow in the opposite direction, if the 2nd 1st of carrier gas pressure exceeds the pressure of the carrier gas, will take place the sublimation of the solid precursor is not uniform, and this non-uniform sublimation will lead to non-uniform supply to the reactor for chemical precursor.

The method has a shortcoming that the other, the method only needs to supply the separate precursors 2nd the processing chamber. The method cannot be used for the precursor supply a plurality of reactor, this is because of the plurality of reactor balance the requirements of the competition, the conveying device is connected to a plurality of reactor respective uniformly supplying chemical precursor.

Therefore, people still conveying device in need of improvement, and of the solid precursor to the vapor transport method, wherein the solid precursor depleted in the conveying device, the solid precursor vapor concentration is sufficiently high in concentration. There is also a need to have conveying device of the following characteristics: the device is capable of a uniform and high flux of the precursor vapor is transported through process, until the conveying device for the solid precursor depleted in, at the same time, the carrier gas flow rate is greater than the 1 standard liters/minute.

Content of the invention

The present invention describes a conveying system, the delivery system comprises: conveying device, the conveying device having an inlet and an outlet, the delivery device includes a solid precursor; 1st proportional valve, the proportional valve 1st with the conveying device is connected with the inlet of the; the 1st proportional valve in accordance with an applied voltage for operation, 1st stream of carrier gas used for controlling the flow to the flow of the conveying device; 2nd proportional valve, the proportional valve and 2nd communicated with the outlet of the conveying device; the 2nd ratio valve operating according to an applied voltage, 2nd stream of carrier gas used for controlling the flow to the flow of the conveying device; mixing device, said mixing device is located downstream of the conveying device, the mixing device the operation of the logistics and 1st 2nd logistics mixed; chemical sensor, the chemical sensor is arranged in the mixing chamber downstream of the, operation of the chemical sensor, is discharged from the mixing chamber used for analysis of chemical content of the fluid stream; said chemical sensor is connected with the 1st proportional valve; and 1st pressure/flow controller, with the chemical sensor and is communicated with the proportional valve 1st operation; operating said conveying system, with the conveying system is connected to a plurality of reactor substantially constant number of moles of precursor vapor/unit volume of the carrier gas.

This invention has also described a method, the method comprises: the carrier gas through the conveying device 1st logistics transmission into the mixing chamber; the conveying device comprises a precursor compound; 1st of the carrier gas is equal to or higher than the temperature of stream 20 °C; 2nd stream of the carrier gas is transmitted to the mixing chamber; said mixing chamber is located in the position of the lower reaches of the conveying device; and, in the mixing chamber with the 1st 2nd stream stream, form the 3rd stream; the stream of material on the 1st and 2nd contact with each other along the before flow in the direction opposite to each other.

Description of drawings

Figure 1 is a schematic diagram of an exemplary delivery system, wherein the conveying device with one or more fluid communication with mass flow controller, the mass flow controller in fluid communication with the respective reactor vessel, the vapor from the conveying device is arranged on the surface of the selected in the reactor;

Figure 2 is a schematic diagram of an illustrative delivery system, wherein a single pressure/flow controller to control the flow rate by means of the transmission device;

Figure 3 is a schematic diagram of another exemplary delivery system, wherein a single pressure/flow controller controls the mass flow rate by means of the transmission device;

Figure 4 is another a schematic diagram of another exemplary delivery system, wherein a single pressure/flow controller controls the mass flow rate through the conveying device, the 1st ratio valve is arranged at downstream of the conveying device;

Figure 5 is a schematic diagram of an exemplary mixing chamber; and

Figure 6 is a schematic diagram of another exemplary mixing chamber.

Mode of execution

In this the reference with photos more complete description of the invention, given in the attached drawing the various embodiments. In the Figure the same mark indicates the same element.

It should be understood, when describing a component in another element when "on", the element may be located either directly on the other element, or can be in between these two elements is inserted in the element. And is opposite, if say a kind of component "direct" located "above" another element, the insertion element does not exist. In this text, the term "and/or" including relevant the object one or more in any combination of all and combined.

It should be understood, although the terminology used in the present invention 1st, 2nd, 3rd, etc. describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to a element, component, region, layer or section from another element, component, region, layer or section tinguish. Therefore, the discussions below 1st element, component, region, layer or portion may also be recorded as 2nd element, component, region, layer or section, and will not deviate from the content of this invention.

The terms used herein are merely used to describe a particular embodiment, but is not used for limiting. As used herein, the singular forms of "a", "an" and "the" includes plural refers to a generation of thing , unless the text clearly indicated in the other. It should also be understood, in the specification, terms "comprises" and/or "including", or "comprises" and/or "containing... the" indicating the presence of stated features, regions, integers, steps, operations, elements and/or components, but does not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components and/or the combination of the situation.

Furthermore, in the present invention, relative terms, such as "lower" or "bottom" and "upper" or "top" shown in the Figure to describe a kind of element relative to the other the relationship between the element. It should be understood, in addition to the relative terminology as shown in the Figure outside the orientation of the, different orientations of the device. For example, if the device is reversed in the Figure, the former described as located in the "lower" of the elements of the element will be described as separate "upper" side of the component. Therefore, the specific orientation according to the Figure, an exemplary term "lower" includes "lower" and "upper" orientation. Similarly, if in the Figure the device reversed, before the other elements described as "below" or "below" the element can be described as "above" the other elements. Therefore, the exemplary terms "below" or "below" the can at the same time the orientation of above and below.

Unless otherwise defined, otherwise, all terms used herein (including technical terms and scientific terminology) has the invention belongs to the field of normally the ordinary technical personnel understand the same meaning. It should also be understood, the definition of the dictionary in the commonly used meaning of terms should be understood as of the relevant areas and was consistent with the definition of the invention, unless the other herein, should be understood as not idealized or completely formalizes meaning.

Referring to the cross section of the idealized embodiment described a schematic diagram an exemplary embodiment of the present invention. Therefore, consideration could be given according to the manufacturing technology and/or the tolerance for changes in the shape of the shown. Therefore, the embodiments described herein should be understood as not limited to as shown in the Figure only the specific shape, but should include, for example, due to manufacturing to form deflection of. For example, as shown in the Figure and is described in to the flat area usually can have rough and/or nonlinear features. Furthermore, display in the picture is the acute angle can be rounded of. Therefore, as shown in the Figure is a schematic diagram of the region itself, does not mean that the shape of the accurate shape of the area, this should not be a right limit the scope of the claims.

Terminology "comprises..." includes the term "by the... ;" and "consisting essentially of... ;".

The present invention discloses various numerical range. These range between and including the end point of the value of the end point. These range of values may be exchanged with each other.

The present invention describes a conveying system, the system including through concentration sensor and pressure sensor and the reactor (including a mass flow controller and the reactor container) in fluid communication with a delivery device. The concentration sensor and the pressure sensor are respectively with the 1st and 2nd is electrically connected to the pressure/flow controller, the 1st and 2nd pressure/flow controller through said conveying system flow of a carrier gas. The use of the carrier gas stream of the conveying system, the carrier gas stream of carrier gas stream is divided into two streams, stream 1st and into the conveying device for contact with the solid precursor compound, 2nd stream bypasses the conveying device.

Because states the carrier gas divided into two streams, so that the 1st 2nd the velocity of flow of the stream may be less than the velocity of flow of the stream. The entire 1st stream may also be heated to the flow path of the elevated temperature. The 1st logistics slower flow velocity and elevated temperature are combined, allows bringing a larger volume of precursor vapor, and will not form the channel and the cavity. The transmission per unit time through a plane perpendicular to the flow direction the amount of the precursor vapor is referred to as the flux. In the present invention, of the stream 1st precursor vapor flux higher than the comparative system of the stream of carrier gas in the precursor vapor flux, in the comparison system, there is no bypassing the solid precursor material. This is because the temperature of the elevated stream has 1st. Detour manner with the delivery system (that is to say, of which all volume of the carrier gas through the carrying the solid precursor container system) compared with, the 1st stream can entrain the elevated temperature of a high concentration of precursor vapor, at the same time, the solid precursor compounds will not be in the bed form a channel or cavity.

The conveying system is used for the concentration is uniform and constant precursor vapor delivery to a plurality of reactor. In another embodiment, per unit time of the precursor delivered to the reactor is kept constant on the molar amount of the vapor.

(Flux) having a high concentration of steam includes 1st and 2nd stream containing only the carrier gas in contact with each other downstream of the conveying device, a logistics 3rd. Because the velocity of flow of the stream is larger than the 1st 2nd logistics, the logistics and 1st 2nd 3rd stream to form a stream will make the process of the precursor delivered to the reactor is higher than the vapor of flux does not adopt the detour way of the comparison device. As mentioned above, in order to deliver high flux of precursor vapor to the reactor at the same time, solid precursor is fundamentally eliminated in the formation of the channel and the cavity. Furthermore, the logistics 3rd lower than the dew point of the conveying system and reactor is connected with the temperature of the tube and of the hardware, and to eliminate the phenomenon of the condensed (solid precursor in the deposition of the connecting pipe).

By reducing the concentration of the vapor stream in 3rd, lowering of the dew point of the vapor, the connecting line the vapor condensate will not take place, to the reactor by the constant supply of vapor/carrier gas ratio. Through the conveying system, the dew point of the vapor can be adjusted, the regular according to the transmitted to the carrier gas circuit conveying device to adjust the temperature.

The advantages of said conveying system, to high-throughput manner, the precursor vapor is transported through process, from the delivery device until the solid precursor depleted. The flow of the conveying system can make the carrier gas flow rate of the reactor is greater than or equal to 1 standard liters/minute (slm), preferably greater than or equal to 2 standard liters/minute, more preferably greater than or equal to 3 standard liters/minute. The system can be in the temperature is 60 the [...] , pressure is 900 under the condition of, to greater than or equal to 1500 long and fine hair Morocco /minutes, preferably greater than or equal to 1750 long and fine hair Morocco /minute, more preferably 2000 long and fine hair Morocco /minute flux conveying precursor vapor.

The conveying system is another advantage of the, can at the same time to a plurality of reactor precursor vapor. To a plurality of said conveying system of the reactor to balance competing requirements, can be supplied for each reactor has a uniform stream of the precursor vapor concentration, but does not consider the volume of the separate requirements of the reactor. The conveying system may be substantially constant concentration to each reactor precursor vapor. In one embodiment, the 2-60 minutes of time, said precursor vapor per unit volume with respect to the concentration of a certain selected value in less than or equal to 3% to float within the range of, preferably in 2-60 minutes of time relative to the selected value in less than or equal to 2% to float within the scope of the, more preferably the 2-60 minutes of time relative to the selected value in less than or equal to 1% float within the range of.

The unique said conveying system is characterized in that, the system in the absence of optional mixing chamber under the condition of without utilizing any the opposite flow. In other words, the conveying system not utilizing flow along the opposite direction of stream to contact each other. Only the use of an optional time of the mixing chamber of, the system may use the opposite flow.

As mentioned above, the use of the mixing chamber of the conveying system. In one embodiment, when the conveying system does not adopt the opposite when the flow of, the mixing chamber can be used. The carrier gas and precursor vapor in the mutual contact of the said mixing chamber to promote better mixing, thereby ensuring a precursor vapor can be evenly conveyed to the reactor. In another embodiment, only when the delivery system in use when the flow of the mixing chamber.

See Figure 1, delivery system 100 comprises a conveying device 102, the conveying device are respectively through the chemical sensor 104 and a pressure sensor 106 and the mass flow controller 208 and reactor 200 is connected. The chemical sensor 104 and a pressure sensor 106 is respectively connected with the 1st pressure/flow controller 108 and 2nd pressure/flow controller 110 is to operate. The 1st pressure/flow controller 108 and 1st proportional valve 112 is connected to operate, and 2nd pressure/flow controller 110 and 2nd proportional valve 114 is to operate. In one exemplary embodiment, the 1st pressure/flow controller 108 and 1st proportional valve 112 is electrically connected with, and 2nd pressure/flow controller 110 and 2nd proportional valve 114 is electrically connected with.

When the proportional valve 112 and 114 is arranged on the conveying device 102 when upstream of the, operates the proportional valve is used to control through the conveying system 100 flow of a carrier gas. The proportional valve 112 and 114 may be provided downstream of the conveying device, the through the operation to control the flow of carrier gas and precursor vapor. Closing valve 116,118,120 and 122 are used for isolating different parts of the conveying device. In one embodiment, in the conventional operation, the shut-off valve 116 and 118 is open.

When applied to the proportional valve 112 and 114 when the voltage increases, the proportional valve opening increase, thus increasing the flow rate of carrier gas through a proportioning valve. On the other hand, when the applied to the proportional valve is reduced when the voltage on the of, proportional valve opening is reduced, through a proportioning valve so as to reduce the flow rate of a carrier gas.

In one embodiment, the chemical sensor 104 and the 1st pressure/flow controller 108, the 1st proportional valve 112 and the delivery device 102 form the 1st closed loop, the closed loop including the 1st 1st stream of the carrier gas 202. 1st stream of the carrier gas 202 guiding conveying device 102 an inlet (not shown in Figure). The 1st logistics in the present invention also referred to as source [...] , this is because said 1st logistics on the conveying device 102 in contact with the solid precursor compound, entrain and precursor vapor. Because is one of logistics 1st entrain the function of precursor vapor, thus 1st logistics are normally maintained at an elevated temperature. However, the temperature of the raised lower than the accommodated in the conveying device 102 in the melting point of the solid precursors.

The 1st logistics generally maintained in the 20-80 [...] , preferably the 30-75 [...] , more preferably the 40-70 [...]. The 1st logistics 202 vapor precursor compound includes, at the same time uniformly consumption and the 1st logistics contact with the surface of the solid precursor compound. From this the solid precursor compounds can be avoided in the formation of the channel and the cavity.

In another embodiment, the pressure sensor 106 and the 2nd pressure/flow controller 110, the 2nd proportional valve 114 and the conveying device 102 form the 2nd closed loop, the closed loop including the 2nd 2nd stream of carrier gas 204. 2nd stream of the carrier gas 204 guiding conveying device 102 one of the outlet. The 2nd logistics in the present invention, also known as "detour flow" logistics, this is because said 2nd stream in the conveying device for bypassing the solid precursor compounds.

The 1st stream 202 in the away from the conveying device 102 with the 2nd stream after 204 combined, form the 3rd stream 206, the logistics 3rd through the mass flow controller 208 enters the reactor 200. In the outlet valve 122 downstream of, the 1st stream 202 with the 2nd logistics 204 merge. The 3rd stream 206 is located in the carrier gas containing the required amount of precursor vapor. Because the carrier gas is divided into two streams, before the entering the conveying device, the heating stream 1st. As mentioned above, the logistics 1st 202 and 2nd stream 204 is not opposite to each other. In one embodiment, the logistics 1st 202 and 2nd stream 204 flows in the direction along the same. In another embodiment, the logistics 1st 202 and 2nd stream 204 to 1-90 ° angle of encounter each other, form the 3rd stream 206, the 3rd stream 206 into the reactor 200.

In one embodiment, optional mixing chamber 107 can be used to from the 1st stream 202 and 2nd logistics 204 merger of the fluid. In the mixing chamber 107 in, from 1st stream 202 and 2nd logistics 204 along the opposite of the direction of the fluid can be introduced. In another embodiment, when the 1st stream 202 and 2nd stream 204 is not along the flow in the direction opposite to, the mixing chamber 107 can be used for the merger stream from 1st 202 and 2nd logistics 204 of the fluid. To this will be below two embodiments for more detailed discussion.

The 1st stream 202 and 2nd logistics 204 combined to form the 3rd stream 206, the carrier gas in the concentration of the precursor vapor is reduced, leading to lower the dew point of the precursor vapor. Therefore, when the carrier gas is entrained in vapor encountered when a reduced temperature, the precursor vapor will not be condensed. For the reactor by the constant supply of precursor vapor/carrier gas ratio. In another embodiment, of the stream through the 3rd of the dew point of the precursor vapor to lower than normal temperature, the precursor vapor condensation will not take place, can be the reactor supply constant precursor vapor/carrier gas ratio.

The 1st and 2nd mutual collaboration closed loop, control is delivered to one or a plurality of reactor 200 of the precursor vapor concentration and conveying pressure. Each reactor is connected through the mass flow controller 208 each control flows into the flow rate of the precursor of the reactor. The 1st and 2nd closed loop also cooperate with each other, maintain the dew point of the precursor vapor in the lower than normal temperature. This can prevent the precursor vapor condenses, than other commercial to allow comparison of the system with higher mass flow rates, the transmission to the reactor a greater amount of precursor vapor. Although the fig. 1 display in each circuit is a closed loop, but if need be, these loops can also be a portion of the loop is open.

Pictures to 1, conveying device 102 includes the valve 120, the valve can be used to start or stop the carrier gas flow into the delivery device 102 flow. The conveying device 102 also has a discharge valve 122, the discharge valve can be used to start and stop, include precursor vapor of the carrier gas from the delivery device 102 to the reactor 200 flow. In Figure 1 can also be seen, the conveying device 102 and reactor 200 fluid communication, from the conveying device 102 in the reactor the precursor vapor is 200 on the surface of the selected. Mass flow controller 208 allows the mixture to the desired flow-rate to the reactor 200 flow.

The mass flow controller 208 and reactor 200 can include a separate mass flow controller and a reactor, or includes a plurality of mass flow controller and a reactor (not shown in Figure). In one exemplary embodiment, the mass flow controller 208 and reactor 200 includes a plurality of mass flow controller and the reactor.

The conveying device 102 includes an inlet (not shown in Figure) and an outlet (not shown in Figure), enter states the carrier gas from to state , entrain and precursor vapor-carrier gas through the outlet to the reactor 200. The conveying device 102 to enter the inlet of the valve 120 is in fluid communication with, and conveying device 102 with the outlet of the discharge valve 122 fluid communication. The conveying device 102 generally comprises a filling material (not shown in Figure) and solid precursor compounds (not shown in Figure). The filling material is arranged on the whole between entry and solid precursor compound.

In one embodiment, the conveying device 102 is the heating sleeve 103 surrounds, the heating mechanically to the conveying device 102 is kept at elevated temperature. The heating sleeve 103 can be used for fluid (such as steam sleeve) or electric energy for heating. The heating sleeve 103 is used for the system 100 that the air (that is, carrier gas and precursor vapor) is always kept in the higher than the temperature of the the 20 [...]. The heating sleeve 103 the conveying device 102 in the temperature of the precursor compound in the 20-80 [...]. In one embodiment, the carrier gas used for transmission to a conveying device to maintain all of the tubes or pipes the 20-80 [...].

The conveying device for the inlet and the outlet can 102 and will not be subject to the carrier gas or solid precursor compounds negative impact, the carrier gas would not change the composition of the precursor compounds, or solid material. Also hope that the material is able to withstand the temperature and pressure of operation. The outer cover can be made of suitable material, such as glass, Teflon and/or metal manufacturing. In one embodiment, casing is made of metal. Exemplary metal includes nickel alloy and stainless steel. SS304 stainless steel including appropriate, SS304L, SS316, SS   316L, SS321, SS347 and SS430. An exemplary nickel alloy including INCONEL, and MONEL HASTELLOY.

The conveying device 102 can be used in many kinds of filling material (not shown in Figure), on the premise that the filling material under the condition using the solid precursor compound is inert and cylinder. Generally speaking, that of filling material is flowable. For example, as the solid precursor compound is consumed in the cylinder, in the cylinder the level of the solid precursor compound will drop, filling material precursor compound needs to flow to fill any depressions in the surface of the layer. Suitable filling material comprises a ceramic, glass, clay, organic polymer, comprising the above and the combination of at least one kind of material. Suitable examples of the ceramic filling material including alumina, silica, silicon carbide, silicon nitride, borosilicate, alumina-silicate, comprising the above and the combination of at least one kind of material.

The filling material can be provided with a plurality of shapes, for example granular, rod-like, tubular, tessellation, ring-shaped, saddle-shaped, disk-shaped, shallow small dish shape , or other appropriate form, for example, needle-shaped, cross-shaped and a spiral (coil shape and spiral). If necessary, can also be a combination of different shapes. Filling material can usually be bought in the market from a variety of sources. These filling materials can be used directly without processing, may also be cleaned prior to use.

The conveying device 102 typically includes an opening (not shown in Figure), through the opening into the solid precursor. Can be through any appropriate way of the solid precursor material into the conveying device. Solid precursor compounds can be added in the form of powder conveying device 102, or can be in a melt method for adding the conveying device 102 (will be seen in the following discussion in the article). Solid precursor compound the ratio of the volume of the filling material can be changed within a very wide range, for example 10:1 to 1:10. In one embodiment, the volume ratio of 1:4 to 4:1.

The solid precursor compounds are precursor vapor sources. Any suitable vapor delivery system for a solid precursor compounds can be used for the conveying device. Suitable precursor compounds include indium compound, zinc compound, a magnesium compound, an aluminum compound, gallium composition, comprising at least one and the combination of the above-mentioned compounds.

Exemplary solid precursor compounds include protonic compound, for example trimethyl-indium (TMI) and three unclesbutyl indium ; trialkyl indium-amine adduct; dialkyl indium compound, such as dimethyl vapor; alkyl two indium compound, such as methyldiallyl vapor; cyclopentadiene base indium ; three protonic; three alkyl arsenic adduct, for example, trimethyl-indium-trimethyl base arsenic adduct; three protonic-trialkyl- phosphine Canada compound, for example trimethyl-indium-trimethyl cinnamenyl adduct; alkyl zinc halide, such as iodinated ethyl zinc; cyclopentadienyl zinc; ethyl cyclopentadienyl zinc; aluminum alkane-amine adduct; alkyl two aluminum halide compounds, such as methyldiallyl aluminum chloride; alkyl b halogenate gallium compound, such as methyldiallyl to respond; dialkyl halogenate gallium compound, such as dimethyl to respond and dimethyl amine melts the gallium ; bicyclic pentylene magnesium ("Cp₂ mg"); carbon tetrabromide ; metal β-diketone acid salt, for example hafnium , zirconium, the sludge β-diketone permanaganate; metal two alkyl acid radical ammonia compound, for example four (dimethylamino) hafnium; silicon compound and germanium compounds, such as two (b (trimethylsilyl) amino) germanium. In the above solid precursor compound, the term "alkyl" expressed (C₁-C₆) alkyl. Solid precursor compounds can be used for the mixture of the conveying device of the present invention.

The solid precursor compounds can be fusion bonded. In this text, "frit" solid precursor compound that of the fusion. It has been found that, with other conventional technology or compared with other commercially available device, in the conveying device for melting solid precursor compound can make the precursor compound in a vapor phase with a constant stable concentration, such that the solid precursor compounds better from cylindrical consumption. "Solid precursor compound melt" said solid precursor compound fused cake material, having a substantially flat top surface and a sufficient porosity, states the cake material the carrier gas can be passed. In general, when the first form a solid precursor compounds of time of the melt, the melt of the inside of the shape of the same size and the cylinder, in other words, the width of the the states the melt material with one of the inlet chamber substantially equal to the inside dimensions of the. The use of the height of the states the melt material depends on the amount of solid precursor compound.

Conveying device 102 can be the use of an appropriate carrier gas, and as long as the carrier gas, solid precursor compounds. The specific choice of gas depends on a variety of factors, such as the use of precursor compounds of the specific use and the chemical vapor deposition system. Suitable carrier gas comprises an inert gas. Exemplary gas including hydrogen gas, nitrogen gas, argon gas, helium gas and the like.

The chemical sensor 104 is concentration sensor, measuring the carrier gas in the concentration of the precursor vapor. The chemical sensor 104 through the continuous monitoring and control of the gas concentration with the aid of a conveying device 102 of the logistics 1st 202 to display the change in concentration and/or floating, thereby controlling the vapor precursor entering the reactor the mass transfer rate.

In one embodiment, the chemical sensor 104 is on-line acoustic double-gas concentration sensor, for sensing the proportion of the precursor vapor and the carrier gas. The chemical sensor produces the acoustic signal, the acoustic signal through the gas mixture (i.e. the precursor compounds of the mixture of vapor and carrier gas), using digital signal processing techniques to accurately measuring the transmission time of the acoustic signal. Furthermore, according to the carrier gas in the physical properties of the precursor vapor, carrier gas with the transmission time calculated in the concentration of the precursor vapor. The data provided by the measurement of the concentration of the precursor vapor can be used to control mass transfer rate, at the same time relative to the carrier gas to the precursor vapor to compensate for any change in concentration. Through the stated 1st proportional valve 112 to achieve the control of the mass transfer rate.

For example, when the from chemical sensor 104 to zero volts the output signal of the time of, in said carrier gas to the precursor vapour concentration 0 weight % (weight percent). When the from chemical sensor 104 output signal is 5 volts of time, in a carrier gas for the precursor vapor concentration of 1 weight %. In one exemplary embodiment, the chemical sensor 104 can be buys from Luo river Zerk Si industrielle (  Industries Lorex) of the .

In one exemplary embodiment, when the solid precursor compounds is when trimethyl-indium, chemical sensor 104 control of a conveying device 102 of the flow, so that the delivery system 100 vapor of trimethyl-indium in dew point is 17 °C. The conveying device 102 and mass flow controller 208 to the reactor for between 200 feeding transmission catheter device (can be used for transmission of carrier gas and precursor vapor line) are normally maintained in a 20 the [...] room temperature. In order to prevent the trimethyl-indium vapor in the condensation device in transmission conduit, to choose trimethyl indium 17 the of the dew point of the [...]. 3 °C difference can make the precursor vapor continuously and stably flow into the reactor.

The pressure sensor 106 measuring and conveying device 102 of the pressure. The pressure sensor 106 may be a pressure gauge, such as pressure gauge. The pressure sensor 106 and the 2nd controller 110 and 2nd proportional valve 114 combination, provides for controlling the pressure of the precursor vapor and carrier gas of the mechanism.

Figure 5 and Figure 6 show in detail the optional mixing chamber 107. Figure 5 shows the mixing chamber 107, including flow in the opposite direction, and Figure 6 the mixing chamber 107 is not included in the reverse flow.

Figure 5 shows the mixing chamber 107, wherein the 1st stream 202 and 2nd logistics 204 reverse flow. This mixing chamber 107 comprises a nickel alloy or stainless steel to manufacture the chamber 300. The chamber 300 can be provided with any shape, but is preferably a diameter equal or nearly equal to the height of the cylinder. In one embodiment, the diameter of the mixing chamber is preferably greater than or equal to 1 inch, preferably greater than or equal to 2 inches, more preferably of greater than or equal to 3 inches. In another embodiment, the height of the cylinder is greater than or equal to 2 inch, preferably greater than or equal to 3 inches, more preferably of greater than or equal to 4 inches.

1st stream 202 by the pipeline 302 inlet chamber 300, and logistics 2nd 204 via the conduit 304 inlet chamber 300. The logistics 3rd 206 by the pipeline 306 leaves the room 300. When the mixing chamber 107 when used for transporting the system, the mixing chamber 107 so that it can become the position of the closed loop of the 1st and 2nd a part of the closed loop.

The pipeline preferably has a diameter greater than or equal to 0.25 inch, preferably greater than or equal to 0.35 inches, more preferably of greater than or equal to 0.5 inch of the diameter of the circular cross-section. From Figure 5 can be seen, the conduit 302 and 304 the outlet of the opposite to each other. The the outlet of the pipeline is designed to be opposite to each other, and spaced apart from each other less than 0.5 inch, so that the 1st stream 202 and 2nd logistics 204 mixed closely to each other, then as 3rd logistics 206 through the pipe 306 is discharged from the chamber. The duct 306 is provided with a device 308, the device 308 is used for the chamber 300 and the reactor 200 inlet (not shown in Figure) is connected with the connected pipeline.

The pipe 302 is provided with a flange 310, the flange 310 and and the pipe 304 communicated with the chamber 300 side of parallel to each other. The flange 310 to logistics 1st 202 and 2nd logistics of the flange 310 and chamber 300 of the space between the side surface 312 of the intimate mixture are formed.

Figure 6 shows that the mixing chamber 107, wherein the 1st stream 202 and 2nd stream 204 is not of the reverse direction with each other. In this case, the logistics 1st 202 by the pipeline 302 inlet chamber 300, and logistics 2nd 204 via the conduit 304 inlet chamber 300. Two streams in the room 300 of the intersection, so that the two streams 202 and 204 mixing occurs between, they then as stream 3rd 206 by the pipeline 306 leaves the room 300. In the Figure 5 and Figure 6 in the embodiment shown, the pipeline 302,304 and 306 can include a nozzle, the porous filter or can be used to strengthen the logistics 1st 202 and 2nd logistics 204 mixed between the other device. The mixing chamber may further comprise filling material, such as bead, rod, tubular, tessellation, ring-shaped, saddle-shaped, disk-shaped, shallow small dish shape , or other appropriate form, for example, needle-shaped, cross-shaped and a spiral (coil shape and spiral) of the filling material. If necessary, can also adopt the listed above to the combination of the different filling material. The mixing chamber 107 can be used for picture 2-4 any of the embodiments shown, used for 1st stream 202 and 2nd logistics 204 the position of the contact.

Pictures to 1, 1st controller 108 and 2nd controller 110 is independent proportional-integral-differential (PID) control module, which are designed to provide a delivery system 100 of the total pressure of the flow or carrier gas optimization control. To the 1st proportional valve 112 from the input signal of the pressure sensor 106. To the 2nd proportional valve 114 from the input signal of the chemical sensor 104. Each pressure/flow control system comprises three basic parts, in other words the process sensor, proportional-integral-differential controller and the control element.

In 1st proportional valve 112 during work, chemical sensor 104 for measuring process pressure or the carrier gas flow rate. Proportional-integral-derivative controller of the measured with the precursor concentration is compared to the setting value, according to the need to regulate the proportional valve 112, thus the 3rd stream 206 in the precursor vapor concentration required.

In 2nd ratio valve 114 during the work, pressure sensor 106 control detour flow, in order to keep the pressure of the set procedure. Through the mass flow controller 208 realize the reactor 200 for the precursor vapor. As the corresponding, and the flow controller 110 and 2nd proportional valve 114 associated pressure sensor 106 adjusting 2nd stream 204 in the flow rate of the carrier gas, so as to stream 3rd 206 provide the necessary pressure.

In one embodiment, can make a plurality of pressure/flow controller from the belonging to a main pressure/flow controller, the main pressure/flow controller adjusts the total flow rate of the carrier gas in order to obtain the required pressure, at the same time, the chemical sensor 104 and controller 108 for maintaining a desired gas ratio/mixture. For example, fig. 1 of the proportional valve 1st 112 and 2nd proportional valve 114 can be slaved to the main pressure controller (not shown in Figure), so that the whole in 1st stream is divided into gas stream 202 and 2nd stream 204. In this embodiment, the concentration of the active control.

The shut-off valve 116 and 118 and into the valve 120 and discharge valve 122 can be a gate type valve, ball valve, butterfly valve, needle valve, and the like.

In one embodiment, for a using chart 1 conveying system 100 mode, the reactor 200 of the steam from the delivery device 102 extracted. According to the chemical sensor 104 and a pressure sensor 106 provides information, can be the carrier gas by the 1st proportional valve 112 and/or 2nd proportional valve 114 transportation or for conveying the two at the same time.

In one embodiment, by including the carrier gas stream of the 1st 202 and 2nd logistics 204 of the fluid circuit (such as a pipe or pipeline) time of, usually not higher than the carrier is heated to the melting point of the solid the temperature of the precursor compound. The 1st stream 202 of carrier gas in through the transmission device 102, entrain the vapor precursor compounds. Entrain the 2nd a carrier gas and the vapor stream 204 in meet the carrier gas. By adjusting the logistics 1st 202 and 2nd stream 204 in the mass flow rate of a carrier gas, the concentration of the precursor vapor can be maintained in the required amount.

By setting the chemical sensor 104 and a pressure sensor 106 and the corresponding pressure/flow controller 108 and 110 to define a desired [...]. Chemical sensor 104 measuring 3rd stream 206 in the concentration of the precursor vapor. By the pressure sensor 106 measuring carrier gas (wherein bringing the precursor vapor) pressure and/or flow rate.

At present, the concentration of the vapor relative to the carrier gas is deviated from the required amount or when the range required, the chemical sensor 104 and the controller 108 and the proportional valve 112 is connected, so as to adjust the carrier gas to the conveying device 102 flow. Through the ratio control valve 112, the stream 206 of the precursor vapor in the amount of the carrier gas is adjusted to a substantially constant extent. The logistics 3rd 206 a precursor vapor in the velocity of flow of the carrier gas depends on the mass flow controller 208 requirements, through the 2nd controller 110 and 2nd proportional valve 114 to control.

For example, the concentration of the current body vapor stream 3rd 206 when in a decline in the carrier gas, chemical sensor 104 to the controller 108 and 1st proportional valve 112 is electrically connected via the 1st of the logistics 202 (including the valve 116 and the valve 120) increases the flow rate of the carrier gas. Thus increases the logistics 1st 202 of carrier gas in the amount of precursor vapor. Through the 1st stream 202 is increased the flow rate in, reduces the logistics 2nd 204 in the mass flow rate of a carrier gas. The 1st logistics 202 precursor in the increase of the steam volume and 2nd stream 204 to reduce the quality of the combination of the velocity of flow, of which stream 3rd 206 precursor vapor concentration and 1st logistics 202 before adjusting the flow rate is reduced compared with the amount of precursor vapor, substantially constant vapor concentration.

In another embodiment, when the 3rd stream 206 in the increase in the concentration of the precursor vapor, chemical sensor 104 to the controller 108 and the proportional valve 112 is electrically connected between the via is reduced logistics 1st 202 flow of a carrier gas. The resulting logistics 2nd 204 in the increase of the carrier gas flow rate. The 2nd logistics 204 the increase in the amount of the carrier gas with the 1st stream 202 to reduce the quality of the combination of the velocity of flow, of which stream 3rd 206 precursor vapor concentration and 2nd logistics 204 before adjusting the flow rate is reduced compared with the amount of precursor vapor, substantially constant precursor vapor concentration.

Therefore, from chemical sensor 104 and a pressure sensor 106 or the reading is used to adjust and maintain the concentration of the precursor vapor flow into the reactor 200 precursor vapor flow rate.

As mentioned above, the delivery system of the present invention 100 the advantages of, the logistics 1st 202 (that is, source) and 2nd logistics 204 (in other words detours the class) of precursor vapor in the carrier gas to the dew point of lower than normal temperature, or more preferably lower than transmission 3rd logistics 206 of the temperature of the connecting pipe and hardware.

Chart 2 display delivery system 100 another embodiment, wherein the carrier gas stream is divided into 1st 202 (flows through the solid precursor compounds) and 2nd logistics 204 (bypassing the solid precursor compounds), then re-combined into a 3rd stream 206, wherein the dew point lower than normal temperature. The 1st logistics 202 the direction of flow, 2nd logistics 204 the flow direction of the stream and 3rd 206 is one-way direction of flow, are opposite to each other is not. As mentioned above, in addition to the mixing chamber outside the condition, does not exist in the conveying system in reverse flow. This is because during the use in said conveying system will not produce reverse flow of carrier gas and precursor vapor required between the mixing, the precursor vapor will result in a non-uniformly distributed mode is delivered to a plurality of reactor.

Figure 2 the delivery system 100 almost with diagram 1 is similar to the delivery system, only distinction lies in 2nd ratio valve 114 and needle valve 119 position. In this case, by the use of the pressure sensor 106 connected with the controller 110 drives the single proportional valve 114 to control the whole delivery system 100 in the pressure chamber. Figure 2 shows the delivery system 100 comprises at least two closed loop, and used for regulating the pressure of the precursor vapor concentration in the carrier gas.

From Figure 2 can be seen, the 1st proportional valve 112 located in 2nd ratio valve 114 downstream, can be optionally from the 2nd proportional valve 114. Needle valve 119 is in closed valve 118 in the downstream. The states the acicular valve 119 for regulating the pressure drop in, the adjustable pressure-fall can be used for adjusting the carrier gas through the 1st proportional valve 112 and delivery apparatus 102 flow.

Fig. 3 display delivery system 100 in another embodiment, the system includes and the conveying device 102 a plurality of connected pressure regulator. The pressure regulator used to facilitate access to the pressure of the carrier gas used in the mass flow controller 208 pressure level.

In this embodiment, the conveying system 100 comprises a 1st pressure regulator 96 and 2nd pressure regulator 98, the 2nd pressure regulator 98 is located in the 1st pressure regulator 96 downstream. The 1st pressure regulator 96 promoting the pressure of a carrier gas pressure from the 1st P₁ to 2nd pressure P₂, the 2nd pressure regulator 98 for pressure from the 2nd pressure P₂ further to 3rd pressure P₃. The 1st pressure P₁ pressure is greater than or equal to the 2nd P₂, the 2nd pressure P₂ pressure greater than or equal to 3rd P₃.

In one embodiment, the pressure of the 2nd P₂ is pressure 1st P₁ the 50-70%, preferably pressure 1st P₁ the 55-65%. In one exemplary embodiment, the 2nd pressure P₂ pressure for 1st P₁ the 58-62%. 3rd pressure P₃ is pressure 1st P₁ the 40-48%, preferably pressure 1st P₁ the 43-47%.

1st pressure P₁ to 1,900-2,100 taintor (250-280 kPa), preferably 1,950-2,050 taintor (260-275 kPa). 2nd pressure P₂ to 950-1400 taintor (125-190 kPa), preferably 1,000-1300 taintor (130-175 kPa). 3rd pressure P₃ to 500-950 taintor (65-125 kPa), preferably 850-925 taintor (110-120 kPa). Therefore, the conveying device 102 can be the reactor inlet pressure of below 200 to the combined operation: 500-2,000 taintor (65-260 kPa), preferably 700-1800 taintor (90-240 kPa), more preferably 900 taintor (120 kPa). The reactor 200 through the 50-760 taintor (6-101 kPa) operate within the pressure range, through the mass flow controller 208 from the delivery device 100 extracting the required precursor vapor.

In 1st pressure regulator 96 is provided downstream of the proportional valve 1st 112, closing valve 116, enter the valve 120, the conveying device 102, the discharge valve 122 and chemical sensor 104. The 1st proportional valve 112 is set in the 1st pressure regulator 96 downstream, 2nd pressure regulator 98 of the upstream.

1st pressure regulator 96 and the 1st proportional valve 112, closing valve 116, enter the valve 120, the conveying device 102, the discharge valve 122 and chemical sensor 104 is communicated with the fluid. Including 1st pressure regulator 96, 1st proportional valve 112, closing valve 116, enter the valve 120, the conveying device 102, the discharge valve 122 and chemical sensor 104 1st fluid stream is referred to as stream 202. The 1st logistics 202 conveying device for guiding the carrier gas 102 of the inlet.

The chemical sensor 104 and the 1st proportional valve 112 is connected. In one embodiment, the chemical sensor 104 and the 1st proportional valve 112 is electrically connected with. The proportional valve 112, closing valve 116, enter the valve 120, the conveying device 102, the discharge valve 122 and chemical sensor 104 is in the closed loop.

The 2nd pressure regulator 98 is arranged in the cut-off valve 118 and the pipeline coil 212 of the upstream. The pipe coil 212 is heated to the temperature of the carrier gas by the heating of the outer cover 103 the temperature of the in. Including the 2nd regulator 98, 2nd valve 118 and the pipeline coil 212 of the fluid stream is called 2nd stream 204.

The 1st stream 202 and 2nd logistics 204 contact, form the 3rd stream 206. In one embodiment, the logistics 1st 202 and the conveying device 102 discharge valve 122 downstream of the logistics 2nd 204-phase contact. The chemical sensor 104 is arranged in the discharge valve 122 downstream. From a chemical sensor 104 output signal via the 1st controller 108 guide 1st proportional valve 112.

In one embodiment, the heating jacket 103 (Figure 3 illustrated) includes a valve 116 and 118, the heater 212, substantially all of the 1st stream 202, of substantially all logistics 2nd 3rd stream of substantially all 204 and 206. This kind of arrangement allows the system 100 of the air flow in the (i.e. carrier gas and precursor vapor) is always kept in the higher than the temperature of the the 20 [...] , prevent 1st stream 202, 2nd stream 204 and 3rd stream 206 in the precursor vapor is condensed. By this allows the precursor vapor evenly conveyed to the reactor 200 or a plurality of reactors. This arrangement overcomes the defects encountered by the other commercial reactor, in the commercial reactor, precursor vapor often condenses on the inner wall of the pipeline, resulting in non-uniform manner to the conveying and distribution to the reactor.

In a kind of functional diagram 3 shown in the delivery system 100 mode, reactor 200 from the delivery device 102 collect the mixture of precursor vapor and carrier gas. The chemical sensor 104 measuring 3rd stream 206 in the precursor vapor concentration and/or flow rate (or pressure). If the 3rd stream 206 in the precursor vapor concentration and/or the flow outside the limits required, the sensor 104 through the 1st controller 108 and 1st proportional valve 112 is connected. The 1st controller 108 increases or reduces the proportion of applied to the 1st valve 112 voltage. Through the closed or open the proportional valve 112, the velocity of flow of the carrier gas or carrier gas (or pressure) the concentration of the precursor vapor can be adjusted to the desired value.

Figure 4 show Figure 3 the delivery system 100 another mode of execution. In this embodiment, the 1st proportional valve 112 is arranged on the conveying device 102 downstream of, and is not as shown in Figure 3 is arranged in the upstream. The system also includes a pressure regulator 96 and 98, the pressure regulator for the pressure of a carrier gas is introduced to the mass flow controller 208 is used for the reactor 200 feeding pressure level.

See Figure 4, we can see that in the 1st pressure regulator 96 is provided downstream of the shut-off valve 116, enter the valve 120, the conveying device 102, the discharge valve 122, 1st proportional valve 112 and chemical sensor 104. Therefore, the 1st proportional valve 112 is set in the 1st pressure regulator 96 downstream, but is arranged in the 1st stream 202 and 2nd logistics 204 upstream of the position of the contact. Therefore, the 1st logistics 202 includes the shutoff valve 116, enter the valve 120, the conveying device 102, the discharge valve 122 and 1st proportional valve 112. The 1st logistics 202 conveying device for guiding the carrier gas 102 of the inlet.

The 2nd logistics 204 includes a 2nd valve 118 and piping coil 212.

The 1st stream 202 and 2nd logistics 204 contact, form the 3rd stream 206. In one embodiment, in the 1st proportional valve 112 downstream of, the 1st stream 202 and 2nd logistics 204-phase contact. The chemical sensor 104 is arranged in the 1st proportional valve 112 downstream of the. From a chemical sensor 104 output signal via the 1st pressure/flow controller 108 guide 1st proportional valve 112. The chemical sensor 104 and the 1st proportional valve 112 is electrically connected with.

In some cases, the 1st proportional valve is arranged on the conveying device 102 downstream of, the help to inhibit the flow through the delivery system 100 may be some cases where the concentration of the oscillation. Because in this embodiment, the conveying device 100 in the high pressure, therefore, flows through the conveying device 100 usually higher the flow rate, in order to obtain the concentration of the same.

In a kind of making delivery system 100 in the method, the proportional valve 112 and/or 114 is arranged on the conveying device 102 of the upstream. Shut-off valve 116 and/or 118 are respectively arranged in the proportional valve 112 and/or 114 and downstream of the conveying device 102 of the upstream. The conveying device 102 is arranged in the heated housing 103 within. The inlet valve 120 and discharge valve 122 are respectively provided on the conveying device 102 at the inlet and the outlet of the. The chemical sensor 104 and a pressure sensor 106 is arranged on the conveying device 102 downstream of, is respectively connected with the proportional valve 112 and/or 114 to form a closed loop circuit. The delivery system 100 through the mass flow controller 208 and the reactor 200 is communicated with the fluid. The mass flow controller 208 is arranged in the reactor 200 upstream.

The conveying system 100 the advantages of, other comparison device can be greater than the velocity of flow of the stream of constant conveying precursor vapor. The method does not include any reverse flow. Through the conveying system 100 along the direction of the flow of the flow of the separate. The precursor vapor between the carrier gas and better mixed, forming a hole in the solid precursor. For including system counter current , when a flow pressure of a flow of the increased time is higher than the other, there will be some problems. In this case, the supply of precursor vapor to the reactor is not uniform. The solid precursor can also lead to non-uniform sublimation, this will be in the solid precursor produces the hole , these holes will also lead to the generation of the supply of precursor vapor to the reactor is not uniform.

The system 100 also allows to the reactor 200 conveying uniform concentration of precursor. This feature makes the system 100 and can be in constant supply per unit time of the total number of moles of the other conveying system tinguish. Constant mole per unit time is not always mean that the per unit volume is the moles of has a constant, in particular the system in reverse flow of the carrier gas. This situation will often cause the per unit volume in the carrier gas is delivered to the reactor for precursors in the amount of floating, thus leading to non-uniformity of the prepared product.

The system of the present invention 100 also makes it possible in a very long period of time in order to have a mass flow rate of a supply of precursor to the reactor.

In one embodiment, the delivery system 100 can be at a temperature higher than or equal to the 60 [...] , pressure is equal to or greater than 900 taintor (120 kPa) under the condition of, with equal to or greater than 1500 micromolar/minutes, preferably greater than or equal to 1750 micromolar/minute, more preferably equal to or greater than 2000 micromolar/minute rate conveying precursor vapor, at the same time, to the reactor 200 supply to keep the velocity of flow of the carrier gas is equal to or greater than 1 standard liters/minute (slm), preferably equal to or greater than 2 standard liters/minute, more preferably equal to or greater than 3 standard liters/minute.