도포 현상 장치, 현상 방법 및 기억 매체
The present invention refers to a substrate having a substrate formed on the device and developing method and storage medium to avoid developing exposure are disclosed. Process for preparing semiconductor number (hereinafter, referred to as wafer) in one of the photoresist process applied on the surface of the semiconductor wafer, the resist predetermined pattern is exposed to form the resist pattern after development etc.. Such processing is generally photoresist pattern, developing device performing coating and developing device connects the exposure system performed by using via the network. Said coating and developing device (hereinafter, referred to as resist) installed in a develop module of the existing method and developing processing of a resist is applied on the photoresist, the exposed wafer surface along a predetermined pattern from a developer supply nozzle etc.. To obtain interval of to be positioned in a wafer, said wafer surface to be evenly supplied developer formed in the rim, the liquid film of the resist is dissolved in the other. As such, it hits the method of forming a nozzle with an ejection opening of the developer is removed to discharge a developer in the halt condition while moving wafer, wafer all over the surface liquid-accumulating method (paddle developing) or wafer while rotating about a vertical axis, for example the wafer along an outer circumferential surface and a developer the force generated by the developer supply nozzle (paddle-less developing) method is known. When considered from the piece of material constituting resist composition, the reactions of the resist supplied relatively in a short time and the processing advances. However, each method to form in said wafer and a large amount of uniform and hits, etc. a developer supplying line time are determined. The developer supply nozzle and a process time is consumed because, supplying of the developer disclosure reaction with resist after start of time, for example approximately 30 - 60 seconds requiring seconds etc.. The temperature detector, and when the wafer exposure processing as immersion exposure has been performed, the micro lenses with an immersion liquid to resist increased influence on the practice of wafer number billion ix.. However resist when a high water repellency, said method when the developer is liable to occur at only one weight is developed with the use of vehicle from the outside. In addition, the diameter of the wafer increases tend, wafer to a thickness of its inner aqueous developer containing at least an active high weight tends to appear significantly narrower than in resist surface. Thus, this highly water hits the resist to form a resist of a first buffer to transmit the necessary to more uniformly, the first and the second coating and developing device more easily solution feeding time of a high throughput of etc. impede a tunneling effect is reduced. The, mist will hybridize to a developer supplying line on the wafer surface to form the entire review hits etc. in the invention. The ends, of the existing method in developing device from the same device for cleaning nozzles in a developer supply mechanism wafer that is in the nanometer range. The cleaning mechanism includes a nozzle formed in the rim of said silicon wafer by supplying cleaning processing performed for the elected body. Of developer with aforementioned mist supplying line even developing device, developing device of the existing method on the substrate in the same manner as developer supplying mechanisms in said mist inside the same device are taken into account. However, this prevents the silicon wafer while supplying a mist and the formed silicon thin film during wafer cleaning mechanism and resist reacting processes is used, processing is stopped and waiting should. On the contrary, the cleaning water mist developer supplying device includes a cleaning mechanism has been performed during wafer processes is used, processing is stopped and waiting should. As a result of this sufficient throughput cannot be improved is bigger disclosed. Patent document 1 mist state and developer rails are arranged the chamber is disclosed. Only, the substrate is heated in a hot plate so that temperature regulation by, the treatment cost increases more than that in the principal developer of inlet pipe is bigger disclosed. The present invention refers to such assessment made by the which, in addition is formed all over the surface substrate is silicon hits the high throughput high uniformity can be obtained coating and developing device, the developing method embodiment a developing method computer program number to be under public affairs computer storage media. The device substrates of the present invention, exposure in a substrate having a substrate formed on the housing contains a coating and developing device, and a develop module, cleaning module, said developed a develop module substrate said cleaning module for conveying mechanism, said develop module, forming a fluid-tight processing container treatment atmosphere, installed in said processing bath for cooling the substrate ([...]) mounted on the plate, said processing container of a substrate in a mist and a developer supplying atmosphere gas supply sections, said cleaning module, and on a mounting substrate, the substrate is developed to supply a cleaning fluid to said vertically disposed on isopropyl characterized. For example post exposure, developing heat treating substrate before heating module, said heating is performed in a develop module cool said substrate transferring week back haul mechanism, said transfer mechanism into the substrate cleaning module from a develop module, which is arranged separately from said week back haul mechanism, said common housing constituting a holder received in the washing module develop module development unit which may disclosed. The develop module said laminated plural-stage may be disclosed. Said atmosphere gas supply, hits the surface of the substrate instead of supplying a developer to form a developer condensation hits the surface of the substrate to a mist developer to form a developer including vapor of said feed gas into the treating container may be made, on the substrate to said vapor condensation to said tank plate number temperature of substrate hole now. Said atmosphere gas supply, for example an atmospheric gas heating means with each other. In this case, the atmosphere gas, heated to a temperature higher than the saturation temperature of the heating atmosphere for example developer in 2000. Developing method of the present invention is, in a development process is exposed resist film formed on a developing method, forming the substrate into a treatment container tight the treatment atmosphere the oxidization step, said processing block installed in a charge tank plate on which a substrate process, cooling process tank plate on a substrate, including an atmospheric gas into the treating container brought into contact with the surface of a developer supplying step of mist and, then, discharged from said container and said substrate cleaning module illicitly, characterized by including a substrate cleaning by the predetermined cleaning solution. The substrate surface of the substrate including a developer supplying vapor of mist developer instead thin-film is a vacuum state, the substrate plate on said tank to said vapor condensation temperature of substrate comprising a step plower number may be disclosed. For example, a heating means heating said atmosphere gas processes, in this case, for example the atmosphere gas heated to a temperature higher than the saturation temperature of the developer in a heated environment are disclosed. As a recording medium storing a computer program of the present invention avoid adverse affect on storage medium used in the device, said computer program, a method for developing the aforementioned embodiment to be characterized. According to the present invention, substrate cooling mist supplying a developer and a develop module placed on tank plate substrate, a substrate cleaning cleaning module, said developed a develop module substrate said cleaning module etc. for conveying mechanism. The, a develop module processing a substrate washing module can be, restricting reduction in throughput billion can number. Figure 1 shows a device of the present invention the plane of the substrates also are disclosed. Figure 2 shows a dB of said coating and developing device also are disclosed. Figure 3 shows said coating and developing device end side also are disclosed. Figure 4 shows a development unit included in said coating and developing device sensors mounted thereon also are disclosed. Figure 5 shows a development unit constituting said developing of the wiring side also are disclosed. Figure 6 shows a plane of said also develop module are disclosed. Figure 7 shows a side of the wiring included in cleaning also disposed between the developing unit are disclosed. Figure 8 shows a disposed between the developing unit shown in process has been performed by said order also are disclosed. Figure 9 shows a disposed between the developing unit shown in process has been performed by said order also are disclosed. Figure 10 shows a disposed between the developing unit shown in process has been performed by said order also are disclosed. Figure 11 shows a change of wafer surface shown described also are disclosed. Figure 12 shows a number 1 shown could be of other configurations of also coating and developing device block plane are disclosed. Figure 13 shows a configuration of the wiring and its other side are disclosed. Figure 14 shows a transverse plane of said also develop module are disclosed. Figure 15 shows a number 1 of also coating and developing device onto another configuration shown in block plane are disclosed. Figure 16 shows a development unit included in said number 1 block dB also are disclosed. Of Figure 17 (a) and (b) is another side view and traverse plane view end development units are disclosed. Figure 18 shows a another side end development units also are disclosed. Figure 19 shows a develop module shown process has been performed by said order also are disclosed. Figure 20 shows a wafer section in evaluating the degree examined obtained are disclosed. Figure 21 shows a wafer section in evaluating the degree examined obtained are disclosed. Figure 22 with an average of 3 σ obtained pattern of CD indicating graph evaluating according are disclosed. Figure 23 with an average of 3 σ obtained pattern of CD indicating graph evaluating according are disclosed. Figure 24 with an average of 3 σ obtained pattern of CD indicating graph evaluating according are disclosed. (Number 1 in the embodiment) First, developing system of the present invention applied coating and developing device (1) is described as follows. Developing device 1 also is provided with (1) (C4) are connected forming resist pattern plane view of exposure device being shown, Figure 2 shows a degree of sensors mounted thereon are disclosed. In addition, Figure 3 shows a section in a system also are disclosed. The coating and developing device (1) and (C1) are provided in the carrier block, its mounting to (11) is conveyed from cancer ([...]) placed on hermetic carrier (C) (12) (C2) (W) window and is processing block to transfer a wafer, processing block transferred from cancer (C2) (12) (W) receives processing completion (C) 70 is composed of a carrier wafer to a solution. Said processing block (C2) is, as shown in fig. 2, in this example for developing treatment (B1) for sending a number 1 block (DEV layer), an anti-reflection film formed on the lower resist film forming processing block (BCT layer) for sending a number 2 (B2), block number 3 (B3) (COT layer) is formed on the resist film for down sequentially from therearound. Processing block (C2) of each layer is viewed in a plane the same configuration in the nanometer range. (B3) as an example of the SFC for example number 3 block (COT layer), (B3) COT layer coating as, for example forming a resist film of water-repellent resist coating film forming module, the resist film is performed at a processing system for processing module of an electric vehicle and after heating, cooling systems processing module group constituting a shelf unit, heating said resist film forming module, installed between the upper surface of the wafer (W) therebetween cooling processing module group (A3) at first and second processing transfer arm constituted by the nanometer range. For example, the resist film forming installed in the water-repellent positive resist is applied. Only, and coating and developing method of the present invention coating and developing device can be applied even if organic phenomenon, positive resist as well as negative resist can be by gravity. The means by which the developing using organic organic developing solution (shoe polishes) week about are disclosed. (A3) from being moved in said shelf unit transfer arm (R1) arranged along a transporting area, each said cool, overclad consists of cooling module. Heating module is placed on the front and with heating, cooling module includes a cooling plate for cooling etc. placed wafer. (BCT layer) for the block number 2 (B2), said resist film forming module and corresponding to the antireflection film formation module, as support member for forming antireflection film coating liquid resist module instead of a wafer (W) (B3) is fed into the same construction as the number under the outside COT layer are disclosed. (DEV layer) number 1 for the block (B1), one DEV layer (B1) resist film forming module in corresponding development unit (20) is 2 stages are laminated. A developing unit (20) has a common housing (21) (W) of a wafer in combined developer to develop module (2) developing a wafer (W) for cleaning module (7) etc. with. Development unit (20) in order to operate after the aforementioned substrate. A developing unit (20) so as to face a plurality of stacked shelf unit (U1 - U5) reciprocally provided in the nanometer range. These shelf unit (U1 - U5) prior to applying heat treatment after developing and developed heating module (13) constituted by the nanometer range. In DEV layer (B1) is characterized in that 2 stage development unit (20) included in each module and each heating module (13) (W) (A1) week back haul mechanism transfer arm for carrying a wafer are provided disclosed. I.e., for transfer arm disposed between the developing unit (A1) are commonly made of stage 2 is to be disclosed. In addition, processing block is (C2), and also as shown in the 3 1 also, shelf unit (U6) is installed, carrier block (C1) (W) (U6) said shelf unit includes a wafer from one of the delivery module, for example number 2 block (BCT layer) (B2) a corresponding delivery module (CPL2) in turn transfer thereto. Block number 2 (B2) (A2) (BCT layer) from the wafer (W) is the delivery module (CPL2) in transfer arm it by each unit (antireflection film formation module and heating, cooling systems a process unit group) and vertical, these unit wafer (W) is formed an antireflection film. Then, wafer (W) of a shelf unit (U6) delivery module (BF2), delivery arm (D1), (U6) of delivery module (CPL3) shelf unit is fed into, and thence, for example 23 °C tempered after adjusted, transfer arm (A3) and (B3) arranged in the block number 3 (COT layer) via, resist film formed resist film forming module. In addition, wafer (W) is transfer arm (A3) (U6) (D1) (BF3)→→shelf unit of delivery module (U6) (BF3) via delivery arm in shelf unit transferred to the delivery unit. On the other hand, DEV layer (B1) the upper part in the shelf unit installed transmission part (U6) (16) (U7) from shelf unit installed transmission part (17) for conveying the wafer (W) directly dedicated transfer means shuttle (18) provided in the nanometer range. (D1) resist film formed on a wafer (W) is via delivery module (BF3) section from delivery arm (16) is fed into, the transmission part (16) of Image (18) on and shelf unit (U7) of transmission part (17) is fed directly into, interface block (C3) having Serial input arm (19) receiving to to be coated. On the other hand, 3 also of CPL imparted delivery module temperature control of cooling module function which, over the wafer (W) BF stores delivery module and a buffer module sensing kettle etc.. Then, the interface arm wafer (W) (19) (C4) is fed into by exposure device, wherein, for example immersion exposure exposure is performed via the network. Then, a shelf unit (U7) wafer (W) of the vehicle from the outside back into the delivery module (TRS6) electrodes are processing block (C2). Wafer (W) is (B1) (DEV layer) back to the block number 1 (A1) (B1) of transfer arm by DEV layer of transporting between modules are disclosed. Shelf unit (U3 - U5) heated in cool (post baking [...]: PEB) processing short message, a develop module (2) carry in developing as thin film (50) is formed, cleaning module (7) subjected a rinsing process. Then, shelf unit (U3 - U5) wafer (W) a heating (post-baking: POST) cool the processed substrate. Then, transfer arm (A1) (W) (U6) wafer of delivery module (TRS1) and transferred to a shelf unit, then delivery arm (12) returns (C) via a carrier vehicle from the outside. The coating and developing device (1) in number control unit (100) by the number encoded at each part of operation. Number control unit (100) is, for example computer made, etc. having program storage not shown. Describing action carry the storage unit stores the program developing and cleaning is performed before a command to, for example a program software stored in the nanometer range. The program number control unit (100) by number read control section (100) is to a signal transmits the number to each device. , the number sent from between the module and operation of each module is encoded. The program, for example hard disk, compact disk, optical disk or memory card magnet of stored medium supplied to a frame stored in program storage unit. Then, 4 also refers to the development unit (20) is described as follows. Development unit (20) comprises a housing (21) expected in (23) 3 on stand a develop module (2) and capable of cleaning module 3 (7) etc. with. A develop module (2) are laminated together and which can be, cleaning module (7) and a develop module (2) is (R1) in a transporting area along a direction of the optical axis. Housing (21) between the wafer (W) is each module and transfer arm for performing delivery of (A1) has an opening (22) is provided in the nanometer range. Housing (21) to the interior of the humidity are retained. Then, 6 5 and also with reference to also develop module (2) is described as follows. Also 5, Figure 6 shows a are also develop module (2) end side view, plane are disclosed. A develop module (2) comprises a retainer (24) which, support (24) on successive circular bath ([...]) plate (3) is installed, on tank plate (3) pair of temperature regulation fluid, for example of passage (31) is formed in the nanometer range. On tank plate (3) is it comes the assistant (wednesdays) supply pipe (32), it comes the assistant pipe (33) connected to one end of each and, it comes the assistant supply pipe (32), it comes the assistant pipe (33) each of the other pump (34) is connected to disclosed. it comes the assistant supply pipe (32) is it comes the grandfather (35) is installed, the it comes the grandfather (35) supplied to a water heater for heating water by heat exchange with said refrigerant cooling etc.. Said output and said heater so that the refrigerant is circulation quantity number, water temperature adjust temperature set by said user. it comes the assistant supply pipe (32), it comes the assistant pipe (33) and passage (31) is divided and is it comes the assistant circulation path, pump (34) by it comes the assistant supply pipe (32) is supplied to the water is said it comes the grandfather (35) in temperature regulation of a flow channel (31) feed. And, pump (34) by passage (31) it comes the assistant from pipe (33) withdrawn via, repeatedly it comes the assistant supply pipe (32) are supplied to adjust temperature. The comes the assistant by distributing, on tank plate (3) and a uniform temperature of entire surface of in addition it comes the grandfather (35) for sensing a temperature of the temperature adjusted encoded number equal temperature. And, on tank plate (3) placed wafer (W) is turned on tank plate (3) surface a predetermined adjust temperatures. As carry, wafer (W) is turned on tank plate (3) is developed so that cooled. On tank plate (3) surface of the central part of the suction opening (36) is opened and, on tank plate (3) in circumferential portions on the surface of the tank plate (3) along the circumferential direction of a plurality of suction opening (37) is opened disclosed. These suction opening (36, 37) is exhaust (38) each connected to one end of 2000. Each exhaust (38) other end of the extension number obtained flow control section (39) is attached with a vacuum pump used to process exhaust means (40) connected to the nanometer range. Flow number control unit (39) has a valve or mass flow controller closes the number having etched. On tank plate (3) on to a surface of the tank plate (3) of 3 in the circumferential direction of the hole (41) and are arranged, the hole (41) is on tank plate (3) of 3 in the thickness direction of a lift pin (42) is inserted through in the nanometer range (shown in Figure 5 by 2 mm is for the sake of convenience). A lift pin (42) is lifting mechanism (43) by on tank plate (3) and the depressed and protrude from a surface of, transfer arm on tank plate (A1) and (3) delivery of wafer (W) between and gap3. On tank plate (3) in a lift pin (42) prevent leaking around it comes the assistant described for the seal member (44) is provided in the nanometer range. For example, lifting mechanism (43) lower side support (24) surrounded by a substrate. Support (24) in on tank plate (3) so as to surround a plurality of exhaust openings (45) is opened and, exhaust port (45) is exhaust (46) connected to one end of the nanometer range. Exhaust pipe (46) and to join the other end of the extension, flow number control unit (47) via said exhaust means (40) connected to the nanometer range. Flow number control unit (47) includes a flow number control unit (39) is configured to be the same. In addition, support (24) on the exhaust port (45) so as to surround the O ring (48) are provided disclosed. In addition, for example exhaust (46) flux number control unit (39) is capable of a develop module upstream of 3 (2) shared in the nanometer range. On tank plate (3) on the vessel (5) is installed, the processing container (5) is configured as a tubular container won below be opened flat. Processing container (5) comprises a support (51) is attached with a lifting mechanism (52) connected to, the lifting mechanism (52) configured to be lifted by the nanometer range. As also shown in the 5, processing container (5) at the time of the fall of the processing container (5) the lower end of the O ring (48) tightly, processing container (5) in a fluid-tight processing space (the treatment atmosphere) (S) formed therein. Processing container (5) in the wall of vessel (5) inner walls of a heater temperature regulation (59) is provided in the nanometer range. Processing container (5) center of the ceiling portion of the processing space (S) upper surface mist state and a developer supply nozzle (53) are provided disclosed. Nozzle (53) treatment vessel is (5) has a connection hole ceiling of an opening (54) is attached with a developing atmosphere gas supply pipe (55) 10 are connected to one end of. Developing atmosphere gas supply pipe (55) other end of the extension developing atmosphere gas heating section (56), flow number control unit (57) to a resist in this order via stored developer source (58) connected to the nanometer range. Developer source (58) is not shown pressure-feeding means are provided, developing atmosphere gas supply pipe (55) downstream of the supplied developer. Flow number control unit (57) includes a flow number control unit (39, 47) in the same manner as having on valve or mass flow controller, to the downstream side of the developer feed rate of the entire number. Developing atmosphere gas heating section (56) is developing atmosphere gas supply pipe (55) supplied from the supplied, carry inert gas supply pipe (61) supplied from the N2 Using mixed, including generating a mist (hereinafter, referred to as developing mist) developer can be developing an atmospheric gas. Developing the atmosphere gas developing atmosphere generated gas supply pipe (55) into the processing space (S) via supplied. In addition, developing atmosphere gas heating section (56) is, for example installed in the heating means is formed to select one, develop an atmospheric gas heated to a predetermined temperature can be adjusted. For example, developing upon flow number control unit (57) developed with an atmosphere gas heating section (56) of the temperature of the developer supplied to the feed rate of the wafer (W) to thereby allow the atmospheric gas and developing every processing encoded number. In addition, wafer (W) to the processing space (S) so that the number of constant and also feeding time of a developing atmosphere gas, exhaust port (45) and suction opening (36, 37) also exhaust gas from, for example wafer (W) so that the constant number of encoded every processing. The, thickness of the wafer (W) is attached to an amount of developing mist developing liquid film (50) formed therein. Developing atmosphere gas supply pipe (55) and developing atmosphere gas heating section (56) is developing atmosphere gas supplier outputs a substrate. Developing atmosphere gas heating section (56) with an inert gas supply pipe (61) connected to one end of the nanometer range. Inert gas supply pipe (61) other end of the extension number flow control section (63) via an inert gas, for example N2 Gas is stored N2 Gas source (64) connected to the nanometer range. N2 Said gas space (S) such as developing atmosphere gas may enter and fed, as purge gas developing atmosphere gas supply pipe (55) alone space (S) via a predetermined disapproval. The, N2 Gas is supplied to the space (S) alone even when developing atmosphere gas heating section (56) in, for example heated at temperature is given supplied. And, hits the phenomenon (50) followed by a predetermined period of time has elapsed when, developing liquid film (50) number (W) is volatile liquid component constituting the wafer surface and dry state, supplied resist reaction of stop to each other. Then, wafer (W) is cleaning module (7) is fed into the cleaning processing receives a resist pattern resolved ([...]) with each other. Then, cleaning module (7) into the tank by a side view also in end 7 through a browser substrate. Cleaning module (7) central portion through which the rear surface of the wafer (W) placed horizontally holding a denial spin chuck (71) having, spin chuck (71) is a rotary drive (72) is attached with a wafer (W) was out of sight ([...]) state consists of rotatably about a vertical axis. In addition, spin chuck (71) so as to surround the wafer on (W) to provide an upper side opening (73) with the cup (74) are provided disclosed. Cup (74) the bottom of the (bottom) side, for example the recess shape misfortune bearer department (75) is installed, misfortune bearer department (75) is a partition wall (76) with the external side area all over the wafer (W) downward side periphery of an inner zone defined by the nanometer range. An outer region is the bottom of the drainage opening (77) is installed, the treatment atmosphere is for exhausting air from a bottom of the inboard exhaust tube (78) is provided in the nanometer range. During the rotation pin 81 and drawing, cup (74) in the nanometer range (2 mm in Figure 7 is for the sake of convenience display) installed on one 3. Lifting mechanism (82) is a lift pin (81) a lifting, the lift pin (81) (A1) the spin chuck by transfer arm (71) between the wafer (W) is transferred. In addition, as shown in fig. 4, expected (23) there is a drive mechanism (83) is provided in the nanometer range. Drive mechanism (83) guide (84) along the cleaning module (7) in addition move along the arranging direction of the drive mechanism (83) connected to the arm (85) and vertically moving the substrate. Said arm (85) each cleaning module (7) are commonly used in the cleaning solution wife cleaning solvent supplying nozzle (86) are provided disclosed. Cleaning module (7) lateral is useful supply nozzle (86) for standby unit waiting (87) is provided in the nanometer range. Then, a develop module (2) and cleaning module (7) and data for processing by, each device 10 and wafer (W) of operation in agent of 8 to 11 also shown in surface condition of a reference also through a browser substrate. On tank plate (3) flow (31) is supplied comes the assistant, for example on tank plate (3) surface exceeds a preset temperature, for example 20 °C adjust temperatures. In addition, exhaust port (45) and suction opening (36, 37) from exhaust vents of a ventable by means, heater (59) by processing container (5) temperature of the inner wall of, for example wafer (W) supplied to the developing atmosphere temperature adjust temperature equal to a temperature of a gas. Then, transfer arm (A1) the processed wafer (W) has one developing unit holding the PEB (20) housing (21) introduced into the on to tank plate (3) delivering (W) on a wafer. (A) of Figure 11 illustrates the wafer (W) which is the, resist film of its surface (91) the exposure part (92) on un (93) consists. A lift pin (42) controlled by a wafer (W) ((a) of Figure 8) rotors. Transfer arm (A1) is retracted and a lift pin (42) is lowered wafer (W) is on tank plate (3) and of the beam, the central part of the wafer (W), base plate and a suction opening (36, 37) respectively is drawn wafer (W) is equipped with an IC on tank plate (3) into both ends on the surface of, wafer (W) on the entire tank plate (3) that is equal to the surface temperature of cooling and in addition processing container (5) is lowered ((b) of Figure 8) processing space (S) formed therein. Developing atmosphere gas heating section (56) developed with developing processing space (S) serves as an atmosphere gas including mist is generated, the oil mist attached to the wafer (W) developing said predetermined thickness developing liquid film (50) is in the form (of Figure 8 (c)), the plate-developing said atmosphere port (45) is stopped and the exhaust from, developing liquid film (50) and (of Figure 9 (a), (b) of Figure 11) and the processing advances reaction of resist. After developing liquid film (50) the reduction of the number of every other or altered in terms of solution, of developing thin film (50) film thickness (H1) is, for example 1 μm - 100 μm so that the adhesion of the developing mist of encoded number. The supply of atmospheric gas into said processing space (S) developing a disclosure when after a pre-set period of time has elapsed, exhaust port (45) and exhaust from disclosure again, performance of a processing space is heated to a temperature N (S)2 Gas can be supplied to ((b) of Figure 9), developing atmosphere gas has been purged to the processing space (S) number is volatile, the surface of the wafer (W) N2 Gas (of Figure 9 (c), (c) of Figure 11) are dried. N then2 In order stationary and, a lift pin (42) on and tank plate wafer (W) (3) from and into the, processing container (5) via an external atmosphere processing space (S) is implemented on the base. Then, transfer arm (A1) (W) ((a) of Figure 10) it by wafer, cleaning module (7) is sent back to the, a lift pin (81) is (W) wafer spin chuck (71) then transferred. Spin chuck (71) wafer (W) that rotate at a standby unit in addition holding state (87) the cleaning liquid supply nozzle (86) of the wafer (W) (W) operatively to move the center of the wafer cleaning solution (70) supplied a. Centrifugal force holding (70) wafer (W) ((b) of Figure 10) peripheral surface toward other purge. (D) as shown in of Figure 11, exposure part (92) is the cleaning liquid (70) are purged to wafer (W) is etched from the surface number would resist pattern resolution. Supplied external control, rotation of the wafer (W) holding the wafer (W) is turned out (of Figure 11 (e)) are dried, wafer (W) by cleaning module includes a transfer arm (A1) (7) discharged from said substrate. The coating and developing device (1) in contact with a wafer (W) in developing hits the drying processing performed for the develop module (2) and a develop module (2) for cleaning module processing a wafer (W) (7) are provided disclosed. The, a develop module (2) in developing treatment, cleaning module (7) cleaning in parallel in the process can be, throughput can be improved. In addition, a develop module (2) since the mist state and a developer supply device, a developer supply nozzle and the movement of the nozzle mechanism or wafer (W) for rotating mechanisms or the like force holding one state, the develop module (2) can be large in number billion. The, such as in the embodiment is a developer supply nozzle to supply a cleaning fluid even if the stored device dividing the module substrates (1) billion number can be large in size. In addition, a developer supply nozzle from a spinning nozzle of the existing method developed 58S module using coating and developing step, after PEB, wafer (W) cooled to a predetermined temperature after said cooling module for conveying the cassette is sometimes develop module. The cooling is, wafer and wafer (W) (W) of each part is to be positioned in a resist pattern width reduce a temperature difference between sins. However, a developing module (2) in said cooling module as well as on tank plate (3) cooling the wafer (W) because, in a wafer (W) cool said cooling module the cassette is a cooling heating and the weak analog signals need cooling, after PEB, direct a develop module (2) can be returned to the processes. The, higher than a throughput can be improved. In addition, the on tank plate (3) for a predetermined wafer (W), wafer (W) developed by heating silicon volatilization billion compared with the temperature regulation during processing number with each other. The, amount of developer can be reduce. (Number 2 in the embodiment) Then, block number 1 (B1) to (DEV layer) 12 also could be other configurations of shown substrate. In this example shelf unit (U1) modules can develop module (101) configured as in the nanometer range. In addition, development unit (20) corresponding to the cleaning unit includes a processing unit (2A) can be arranged as in the nanometer range. Cleaning processing unit (2A) cleaning module (7) arranged to develop module and another transverse 4 (2) is not under the outside number are provided in the developing unit (20) is configured to be equal. A develop module (101) into the tank by end side view, also in transverse plane view 13, 14 also each reference to a develop module (2) S. with differences in mammals are also described. A developing module (101) comprises a housing (102) I partition plates (103) divided vertically by a, partition plates (103) the upper region of the cooling plate (105) is provided in the nanometer range. Cooling plate (105) and is generally circularly, said transfer arm (A1) between the wafer (W) when performing delivery of the wafer can be transfer arm (A1) and do not interfere with the side toward the center from around approximately (106) formed in the nanometer range. Cooling plate (105) has a curved back side, for example temperature regulation for flowing water that are not shown with a passage, cool (13) the temperature heating is performed in a wafer (W) (105) (W) of the beam when the wafer is cooled. In addition, partition plates (103) downward region of side there is a drive portion (107) is provided in the nanometer range. 108 (W) during wafer transfer grill and drawing, driver (107) the cooling plate (105) carrying opening (108) side on tank plate (3) side to move between a wafer (W) delivering. Cooling plate (105) is slit (109, 110) is formed, a lift pin (42) this slit (109, 110) via a cooling plate (105) on the surface of the same by a maximum. In the number 2 in the embodiment, wafer (W) (A1) one transfer arm holding the cooling plate (105) after located on, lowered, the temperature control wafer (W) (105) transferred to. Then, cooling plate (105) wafer (W) at predetermined temperature while cooling on tank plate (3) to move, in the same manner as wafer (W) is number 1 in the embodiment on a lift pin (42) then transferred. Then, wafer (W) is short for developing treatment identical to the number 1 in the embodiment, a lift pin (42) from cooling plate (105) transferred to. And, transfer arm (A1) cooling plate (105) of the first wafer (W) and vice versa when delivering the cooling plate (105) from the wafer (W) for receiving the substrate. Then, transfer arm wafer (W) (A1) includes a cleaning module (7) is fed into the cleaning subjected. The inside block (B1) such as number 1 number 2 in the embodiment is a develop module (101), cleaning module (7) for adjusting each developer, cleaning can be parallel in the process. The, on restricting reduction in throughput billion can number in the same manner as number 1 in the embodiment. (Number 3 in the embodiment) Then, number 1 (B1) of the number 1 in the embodiment shown in block 15 also focuses on another configuration about the empty described substrate. Of Figure 15 number 1 block (B1) is development unit (20) development unit instead (20A) is arranged is, development unit (20A) is a develop module (2) from the cleaning module (7) wafer-transfer (W) holding means (111) are provided disclosed. 16 also is development unit (20A) housing (21) etc. is shown in perspective view. Expected (23) on the cleaning module (7) and arranging direction of a develop module extending along guide (112) is formed in the nanometer range. The carrying means (111) constituting the horizontal movement part (113) is the guide (112) moves to a horizontal direction along the extension. Horizontal movement part (113) to be able to lift a the first roller (114) is connected, is a lift (114) is transfer arm (115) are provided disclosed. Transfer arm (115) and allowed to each module is constructed such that it is, a develop module (2) of a lift pin (42) and cleaning module (7) of a lift pin (81) between the wafer (W) capable delivery of information over. A developing unit (20A) (W) (B1) wafer in block number 1 with path information to describe the other. Cool (13) PEB in disposing the wafer (W) is, transfer arm (A1) by a develop module (2) on and the same short message processing number 1 in the embodiment, transfer arm (115) by cleaning module (7) is fed into the other. After cleaning, wafer (W) (A1) cool by the transfer arm (13) subjected to POST is returned to. The number 1 block (B1) the inside a develop module (101), cleaning module (7) for adjusting each developer, cleaning can be parallel in the process. The, on restricting reduction in throughput billion can number in the same manner as number 1 in the embodiment. In addition according to the number 3 in the embodiment, a develop module from cleaning module to transfer transfer arm (A1) and special body transfer arm (115) are transferred by. The, transfer arm (A1) is connected to the restricting reduction in throughput can surely billion billion number number. (Variants of number 3 in the embodiment) As described, to a developing unit 2 stages DEV layer (B1) are laminated. In number 3 in the embodiment of said conveyance means (111) is, for example each layer installed near but, these transfer means of each layer of the top layer module between the wafer (W) commonly grounded entire module carrying may be disclosed. Of Figure 17 (a) and (b) apparatuses is the wafer (W) to indicate the development units (20B) elevational view of, etc. each plane view shown. Housing (21) is connected and which is provided with an inner (has an opening (22) opposite side of), horizontal movement part (113) are extended from the lower upper layer, transfer arm (115) and the upper side and lower each of a develop module (2) and cleaning module (7) able to access the disclosed. In addition, development unit (20) and development unit (20A) in a develop module (2) and said flumes are in position and not limited to examples of, for example, 18 as also shown in the development unit (20, 20A) across the longitudinal direction of the develop module (2) foot pin now. In the embodiment of each said maximum particle diameter is developable in mist, for example 50 μm hereinafter and, an average particle diameter, for example 10 μm hereinafter are disclosed. In this way, the number particle diameter by developing mist, by so-called dry with gun him, developing treatment when performing wafer (W) at only one other than number billion wet developer can. The, developing deficiency or the generation of particles can be billion number. In addition, a developer developing atmosphere gases said method include the bark of the supersonic wave vibrator developer without limit hole now. The temperature detector, developing liquid film (50) examples of formation of said method is not limited to it. For example, developing atmosphere gas heating section (56) developer temperature higher than the saturation temperature of the developable in an atmospheric gas, for example 50 °C heating (hereinafter, described as a vapor by developing) produce a silicon vapor. Then there developing an atmospheric gas in addition to supply the processing space temperature number (S) on tank plate (3) cooling the wafer (W) (W) developing said wafer vapor condensation surface matching the disclosed. In this case a develop module (121) in process is described substrate. First, heater (59) treatment vessel (5) holds the inner wall of the atmospheric gas are not preventing condensation developing temperature. Developing cancer are not preventing condensation atmosphere gas temperature, gas temperature and preventing condensation also includes developing, developing atmosphere gas are fed to a processing space (S) solution of higher temperature than said other steam dew point. (W) is the semiconductor on tank plate (3) is applied on, developing atmosphere gas steam temperature which is adjusted to a temperature in addition processing space (S) hereinafter dew point phenomenon formed therein (of Figure 19 (a)). Development atmosphere gas can be supplied to the processing space (S), said wafer (W) ((b) of Figure 19) is developing vapor condensation surface, developing hits the predetermined film thickness (50) is in the form, developing steam supply and exhaust port (45) emissions from stopping in the other. Then, in the same manner as number 1 in the embodiment described on N2 Gas is supplied developing atmosphere gas in addition number (W) and dry wafer processing space (S) wetting ability are disclosed. In the embodiment described each wafer (W) atmosphere gas phenomenon even when supplying the same effect can be achieved. The phenomenon is powered by steam, processing space (S) forming is a lift pin (42) holding a wafer (W) floating state into a wafer (W) is developed with an atmospheric gas processing and space (S) on and tank plate (3) hits the developing by the beam (50) is thinner than the now. During processing on tank plate (3) to the suction opening developer condensed on the (36, 37) are drawn from. In addition, developing the atmosphere gas developing mist and developing steam both contained in a pleasant, in which case the heater and developing steam dewing of component attachment of developing mist developed thin film (50) formed therein. In addition, a developer such as dew condensation and developing said thin film (50) the wafer (W) forming in the embodiment applying the drying of other drying method can be, by opening the processing space (S) may be conducted disclosed. In addition for example, a lift pin (42) via a wafer (W) on and tank plate (3) and from the anodes, processing space (S) wafer drying (W) development remains at the surface and heat in the vapour is being disclosed. Disclosure each drying step of drying the timing include, for example supplied terminated and resist reaction of the converted, i.e. cleaning treatment is carried out in a fine pattern number can be a stand-alone when there unnecessary state of the disclosed. In addition, in the embodiment each processed in container (5) heater (59) by processing container (5) instead of heating the inner wall of, for example developing atmosphere gas heating section (56) heated in the N2 Gas supply alone space (S) processing container (5) when heated inner wall of the now. The wall which said developing vapor condensation at temperature higher than said temperature and, then, said raw ceramic stacked in developing an atmospheric gas by restricting the number being condensation developing steam is the inner wall billion may be disclosed. In addition, wafer (W) of said N the drying from thermal shock method2 The method for supplying a material gas is not limited. For example processing of said in, hits the developed wafer (W) (50) is formed, wafer (W) on and tank plate (3) when a predetermined time has passed after substrates to the wafer (W) is on tank plate (3) enter on container (5) increasing processing space (S) open to outside atmosphere may be disclosed. Processing space (S) treated by open container (5) of the wafer (W) of the wafer (W) air flowing around the surrounding of the developing use since the steam pressures, developing liquid film (50) are lowered pressure. As a result, developing liquid film (50) wafer (W) liquid component evaporates to dry surface is under or over. In addition, developer (W) as a liquid component constituting such a dry state and number for reparing over state, to configure the component is attached to the wafer (W) a developer may be disclosed. The number supplied resist reaction of said liquid component that identified in a stand-alone stops evaluating carry etc.. (Evaluation test) Evaluation test 1 Resist is applied on the exposed wafer (W1)- (W3) along a predetermined pattern and each wafer resist his supply. Wafer (W1) of resist cross-section for the upper part of imaging-gate. After the developer for the wafer (W2) 2 seconds after supplying the liquid, resist cross-imaging-gate. For the wafer (W3) after the developer 13 seconds after supplying the liquid, resist cross-imaging-gate. In addition, each wafer (W1)- wafer (W3) to change the kinds of resists applied the same experiment was performed. Figure 20 shows a results of evaluating degrees and 1 in 2000. Of Figure 20 (a) to (c) a second polarity (W1)- (W3) of imaging result and resist wafer using wafer, of Figure 20 (d) to (f) a second polarity (W1)- resist wafer using wafer (W3) of imaging result are disclosed. Even in the use of cleaning liquid supplied which resist is not (W1) performed for the pattern sea ([...]) is uncertain. To the W-CDMA, is subjected to wafer cleaning liquid supplied (W2, W3) were resolved pattern. From the results of the test, as well as the exposed resist comprises the steps with the developer step eluted under a cleaning liquid supplied ([...]) can be informed that the disclosure. I.e., in an area except the dissolved residue number I knew that not can be a stand-alone. Thus, a small resist developing when a supply nozzle and which may be considered to with each other. The by experiments, such as in the embodiment of the present invention the victims of the wafer (W) is developed with the surface to form a thin film of developer by supplying mist has been idea. Evaluation test 2 Evaluation test 1 as well as, an exposed wafer (W1, W2) was prepared. Wafer (W1) is developed and subjected to a spin chuck, a developer supply nozzle while rotating about a vertical axis by the spin chuck from him. A developer supply nozzle position while the supplying of the developer (W1) and diameter direction is moved towards the central portion from the periphery of the wafer, then a predetermined period of time towards a central portion is steadily supplying of the developer. After the developer, a developer supply nozzle wafer (W1) and a resist cross-imaging-gate number alone. In addition, wafer (W2) into the treating container consisting of a container body carrying an upper hatch for the him. An upper hatch closed tight to the inside of the processing space is formed, the processing space in the same manner as number 1 in the embodiment while exhausting air from a rear part to the processing space developing mist on the treatment atmosphere. After developing mist supply, wafer (W2) by supplying a developer nozzle number and a resist cross-imaging-gate alone. (A) and (b) of Figure 21 imaging result wafer (W1), (W2) (c) and (d) of Figure 21 wafer etc. of each imaging result shown. The shape of the pattern formed on wafer (W1) wafer (W2) substantially difference her tortured. From experiment, mist state also be used from a spinning nozzle of developer with a developer supply nozzle appeared that same way as in a developing can be performed. Evaluation test 3 Evaluation test 1, 2 in the same manner as on, an exposed wafer (W) every Royal plurality. An upper hatch in turn wafer (W) treatment vessel consisting of a container body and carrying, formed an upper hatch are closed to seal the processing space, while exhausting air from the processing space processing space by supplying mist developing said treatment atmosphere rear. Developing mist supply time is 45 seconds, 60 seconds, 90 S. each wafer (W) each other through it. After developing mist supply processing space open after closure is stacked on an outside atmosphere, the wafer (W) wafer (W) window and is his cleaning processing. And, the resist pattern within a wafer (W) for each portion of non-uniform index of an average calculated in addition CD CD 3 σ was calculated. Developing mist supply time 45 seconds, 60 seconds, each 90 superhuman experiments evaluating 3 - 1, 3 - 2, 3 - 3 system is. Evaluation test 4 Evaluation test 2 in the same manner as on, a developer supply nozzle from a spinning nozzle cleaning out wafer (W) also, evaluation test 3 CD as well as average and 3 σ was calculated. Each other through the wafer (W) from an inner tube supplying of the developer time is up. Supply order requiring short time for each evaluation test 4 - 1, 4 - 2, doped with 4 - 3. Evaluation test 5 The diameter of the wafer (W) that extends in the direction from one end side of a nozzle with an ejection opening of the wafer (W) and a second end and a developer discharge while a time required after accumulation of the liquid (W), his cleaning processing. Supplying of the developer time is changing each wafer (W), supplied time 30 seconds, 60 superhuman evaluating in one 5 - 1, 5 - 2 less than 1000. 3 to 5 representing the result of evaluating Figure 22 etc.. Drawing each evaluation test of CD average of the total tissue volume, in point of each estimation test 3 σ etc. respectively indicative of a drawing. As a result from, developing mist by a developer supply nozzle by the spray nozzle even when a developer supply nozzle and similarly when supplying of the developer time on an upper portion can be informed that the average obtained from the CD is made. In addition, a developer supply nozzle when subjected to developing mist by 3 σ, doesn't have a big difference between a resist supply. From the results of evaluating these, developing mist by a developer supply nozzle by the spray nozzle in the first shape pattern compared phenomenon considerably influences do not propagate appeared. Evaluation test 6 Evaluation test 3 as well as, an exposed wafer (W) is developed with the mist supply while exhausting air from the processing space is brought into contact processing space was. Developing mist supply time is 30 S. him. Developing mist supply after the suspension, processing space open outside atmosphere (W) drying the wafer surface, then wafer (W) processing process was performed. And, evaluation test 3 as well as resist pattern with an average of 3 σ of CD CD was calculated. Developing mist supply time (W) resets the set processing space open each wafer, each 30 seconds, was 180 S.. Evaluating a time at which to open 30 superhuman 6 - 1, 6 - 2 superhuman 180 to less than 1000. In addition, developing mist feeding time of 60 S. the evaluation test 6 - 1, 6 - 2 the same experiment was performed. Each wafer (W) resets said processing space time developing mist supply open-changing, each 0 seconds, 30 seconds, was 180 S.. To open time 0 seconds, 30 seconds, superhuman 180 in one 6 - 3, 6 - 4, 6 - 5 less than 1000. Figure 23 representing the result of evaluating 6 etc.. Drawing bar graph of average of CD, CD etc. during point of 3 σ of each of drawing. 6 - 1 to 6 - 4 is slightly larger than 3 σ over evaluating in evaluating 6 - 5. I.e., CD increases slightly over variations in pattern evaluating 6 - 5. In addition, the time required until the processing space open long etc. by an average obtained from the CD. This phenomenon may be stopped developing wafer processing space supply of mist remaining mist (W) surface without drying, developing performed think coherence with each other. From the results of the evaluation test 6, pattern shape (W) until wafer drying surface can be informed that the heat affected over time. Evaluation test 7 Evaluation test 3 as well as, an exposed wafer (W) is developed with the mist supply while exhausting air from the processing space is brought into contact processing space was. Developing mist supply time is 60 S. him. Developing mist supply after the suspension, drying and processing space opened wafer (W) surface, then wafer (W) processing process was performed. After cleaning treatment is carried out in the processing space and the time required until each wafer (W) open the set, each 10 seconds, 45 seconds, 90 seconds, 180 seconds, 600 S. him. After cleaning as well as resist pattern with an average of 3 σ was calculated CD CD of evaluating 3. Cleaning treatment is carried out in time until 10 seconds, 45 seconds, 90 seconds, 180 seconds, superhuman 600 in one evaluation test 7 - 1, 7 - 2, 7 - 3, 7 - 4, 7 - 5 less than 1000. Figure 24 representing the result of evaluating 7 etc.. Drawing bar graph of average of CD, CD etc. during point of 3 σ of each of drawing. Evaluating each CD between average and 3 σ is not greatly varies. The, wafer (W) and the time required until dryness after the cleaning treatment is carried out do not significantly contributing to the shape of the pattern can be known. The, such as wafer (W) after said dry surface cleaning processing performed for the wafer (W) to cleaning module it is possible to carrying was found. W: wafer S: processing space 1: coating and developing device 2: a develop module 20: development unit 3: on tank plate 35: it comes the grandfather 36, 37: suction opening 42: a lift pin 43: lifting mechanism 45: exhaust port 5: processing container 56: developing steam supply 7: cleaning module 100: number control unit A coating and developing apparatus develops a substrate of which surface is coated with resist and exposed to lights. The coating and developing apparatus includes a developing module; a cleaning module; and a transfer mechanism configured to transfer a substrate developed by the developing module to the cleaning module. The developing module includes an airtightly sealed processing vessel configured to form a processing atmosphere; a temperature control plate provided in the processing vessel and mounts thereon the substrate and cools the substrate; and an atmosphere gas supply unit configured to supply an atmosphere gas including mist of a developing solution to a surface of the substrate within the processing vessel. The cleaning module includes a mounting table configured to mount thereon the substrate; and a cleaning solution supply unit configured to supply a cleaning solution to the substrate mounted on the mounting table. A substrate having a substrate forming a resist film exposure in housing contains a coating and developing device, and a develop module, cleaning module, developed with a develop module for conveying said substrate with said cleaning module number 1 transfer arm, said develop module, the treatment atmosphere forming a fluid-tight processing container, said processing block installed in a mounted on tank plate for cooling the substrate ([...]), said atmosphere gas including mist of a developer of a substrate in a treatment vessel by forming silicon thin film are transferred to developing gas supply unit, said phenomena for drying a substrate by said silicon thin film for stopping with the drying, the drying said, said silicon thin film is dried to said silicon hits by developing the throughput atmosphere open outside atmosphere for stopping the processing container to said process vessel exhaust gas of which by a mechanism, said number 1 the transfer arm, said dried by drying said substrate to said cleaning module is separated from the conveying structure and guides installed treatment vessel, said cleaning module, said substrate on a mounting part, said is developed by supplying a substrate cleaning said resist layer pattern disposed on isopropyl resolve cleaning the processing performed for the characterized coating and developing device. According to Claim 1, post exposure, developing heat treating substrate before heating module, said heating is performed in a number 2 cool the develop module further transfer arm transferring said substrate, said substrate carrying the cleaning module from a develop module number 1 transfer arm, said number 2 is arranged independent of transfer arm, said common housing develop module constitutes a holder received in the washing module development unit characterized in that a coating and developing device. According to Claim 1, characterized in that said plural-stage is a develop module be formed by the superimposed device substrates. According to one of Claim 1 to Claim 3, said atmosphere gas supply, hits the surface of the substrate of silicon to form a developer including an atmospheric gas mist supply hits the surface of the substrate to form a developer condensation instead to said developer supplying vapor of atmosphere gas into the treating container and including, said vapor to said tank plate on the substrate the coating and developing device characterized condensation plower number temperature of substrate. According to one of Claim 1 to Claim 3, said atmosphere gas supply portion provides an atmospheric gas with a heating means characterized by coating and developing device. Back number A resist film formed on a development process is exposed in developing method, forming the substrate into a treatment container tight the treatment atmosphere the oxidization step, said processing bath plate on which a substrate installed in a charge step, cooling a substrate in a process tank plate on, a developer of atmosphere gas including mist into the treating container brought into contact with the surface of said formed by supplying silicon hits the developing processing have the same area, then, for stopping said silicon thin film phenomena by the Marangoni drying said drying step and, then, dried and discharged from said container to said illicitly cleaning module for processing a substrate, said substrate comprising the resist film pattern by the predetermined cleaning solution said cleaning and sea, said drying process, said specified processing atmosphere open outside atmosphere including developing method characterized process. According to Claim 7, the surface of the substrate surface of the substrate instead of atmosphere gas including mist and a developer supply vapor of atmosphere gas and including a developer supplying step, the substrate plate on said tank to said vapor condensation process characterized plower number temperature of substrate including developing method. According to Claim 7 or Claim 8, characterized in that said atmosphere gas heating by a heating means heating process including developing method. Back number Coating and developing device as used in a recording medium storing a computer program, said computer program, a method to claim 7 or 8 characterized in that embodiment one for developing a recording medium.
