PERFLUOROALKYLENEOXY GROUP SUBSTITUTED PHENYLETHYLSILANE COMPOUND WITH EXCELLENT THERMAL AND CHEMICAL STABILITIES, A PERFLUORO-POLYMER PREPARED BY POLYMERIZING THE SAME AND AN ORGANIC THIN FILM TRANSISTOR COMPRISING AN INSULATION LAYER PREPARED FROM THE POLYMER

Synthesized by Figure 1 in the embodiment 1 derivative is represented by the following formula 1b¹ H-NMR is spectrum.

Synthesized by Figure 2 in the embodiment 1 derivative is represented by the following formula 1b¹⁹ F-NMR is spectrum.

Figure 3 in the embodiment 1 synthesized by thermal represented by the general formula 1b copolymerized state of formula 2b comprises the polymer of DSC (differential scanning calorimeters) presenting the path difference is of graph.

Figure 4 in the embodiment 1 synthesized by copolymerized thermal represented by the general formula 1b comprises the polymer of formula 2b film semiconductor device using the same comprise the (insulating film) an organic solvent of instant gruel made from black-posterior measuring the absorbing UV-Vis is spectrum.

Figure 5 in the embodiment 1 synthesized by copolymerized thermal represented by the general formula 1b comprises the polymer of formula 2b film semiconductor device using the same comprise the (insulating film) an organic solvent before and after of instant gruel made from black indicative of the surface structure of atomic force microscope (Atomic force microscopy, AFM) of electrophotographic is indicative of the pictorial Image.

Figure 6 shows a also of the present invention formula 1 have been polymerized derivative is represented by the following formula 2 comprises the polymer of applied with organic gate isolating member are integrally photograph at a bottom after so as to prepare an electrode using microcontact organic thin-film transistor device for producing shown one example of method is flow of.

Figure 7 in the embodiment 2 manufacturing with lithography electrophotographic by bottom applied electrode microcontact organic thin-film transistor device Image of photograph is shown.

Figure 8 in the embodiment 2 organic insulating layer produced by is graph indicating a electrical properties.

Figure 9 in the embodiment 2 microcontact bottom produced by electrical properties of organic thin-film transistor device is graph indicating a.

The present invention refers to a represented by formula 1 then [...] substituted phenyl ethyl thread column characterized in that compound.

[Formula 1]

In said formula 1,

R₁, R₂ and R₃ other same or not, H, fluoro atoms, 1 to 4 alkyl carbon atoms, 1 to 6 two layer and at least one fluoropolymer layer atoms substituted carbon can a fluoroalkyl group of 4 to 1 of which is selected from, in addition R₁, R₂ and R₃ at least more than one of said terms from the fluoropolymer atoms or fluorocarbon R3 is; Z₁, Z₂ and Z₃ have same or not, H, and of which is selected from alkyl 4 to 1 ; the n and presents a 0, 1, 2 or 3.

Based on the results of a detailed hereinafter the present invention. at the first and the second.

The present invention refers to said formula 1 represented by a [...] substituted phenyl ethyl thread column as relates to compounds, produced of the novel compounds of thermal, chemical stability and the like identifies a excellent, same of organic TFT organic gate insulating material whether a network is, from each other by an organic solvent of organic semiconductor materials, due to its resistance which is applicable spindle, in addition said of the novel compounds of high thermal, by physical resistance in the respective integrally electrophotographic of the electrode by changing the arrangement of electrodes, the thus produced planar metallised textile structure organic thin-film transistor is a high (on/off ratio) that exhibits the characteristics of a non a flickering can be protective boards.

Represented by said formula 1 purple ethyl thread column substituted phenyl [...] of the present invention in compound formed by the purple said [...]in ten temporary bridges a membrane by a necessarily is aligned at (film) since the functional groups, necessarily [...] purple in formula should substituted one or more. I.e., said R₁, R₂ and R₃ at least more than one of said terms from the fluoropolymer must atom, then formula 1a can be derivative is represented by the following.

The present invention refers to said formula 1 represented by a [...] substituted phenyl ethyl thread column produced derivative includes perfluoro polymer, the ten temporary bridge at the time of[...] cycloalkyl is (cyclodimerization) is enabled, and is able to form films.

I.e., the present invention refers to derivative is marked as the chemical formula 2 then having a perfluoro polymer including a repeat unit.

In said formula 2, R₁, R₂, R₃, Z₁, Z₂, Z₃, and n each said formula 1 as defined in the application equal.

More preferably, the present invention refers to derivative is marked as the chemical formula 2a then having a perfluoro polymer including a repeat unit.

In said formula 2a, R₁, R₂, and R₃ each said formula 1 as defined in the application equal.

Said polymer an organic solvent resistant to excellent, thus formed including the substrate and said polymer organic solvent-insoluble the films of fluid, e.g., spin coating to the second stage where it is heated buried within the contact hole is removed, these properties are for producing a membrane an angle and a height of a.. In particular said source insulating polymer when applied material since process solution the advantage of the porous film of the diffused. can be expected.

A monomer compound of the present invention refers to said formula 1 formula 2 polymer gate for organic thin film transistor have been introduced includes insulating material. I.e., an organic solvent polymer said formula 2 from each other by an resistance, and is, thermal and physically stable organic thin film transistor since a gate insulating material ., which are highly advantageous for in producing a.

Said gate an insulating material is of the compound is formula 1 monomer solution is applied to a substrate and dry the next step, the plurality of segments can be produced.

150 ∼ 250 °C conditions said heat treatment is carried out in this polymer preferably in increasing the degree of polymerization values, said heat treatment is commonly used in field on winter or vacuum conditions the nitrogen, is conducted in the presence of an inert gas such as argon it is preferable that the.

The present invention refers to said introduced gate insulating material includes organic thin film transistor.

The, said gate an insulating material is organic which composes a thin-film transistor formed in or organic semiconductor layer (top gate), may be formed on the bottom of (bottom gate).

I.e., substrate and; is formed on said substrate, polymer perfluoro represented by said formula 2 includes with re-layer a gate line and a gate; said gate insulating adjusting position are formed in a electrode (drain)/ drain (source); and, gate insulating material layer is formed on, said source (drain)/ drain (source) spanning between at and their electrode that of the channel formed in the semiconductor layer comprising a layer of bottom face includes microcontact organic thin film transistor.

In addition the present invention refers to substrate and; said are on the surface of a substrate is formed on the electrode (drain)/ drain (source); is formed on on a substrate, said source (drain)/ drain (source) spanning between at and their electrode that of the channel formed in the semiconductor layer; and, said semiconductor layer formed on polymer perfluoro represented by said formula 2 includes a endoderm to a gate line and a gate organic thin film transistor includes microcontact top.

Said substrate contains rubber commonly used in the art for a substrate may be used in, but are not limited to specifically for example, silicon wafer substrate, ITO (idium tin oxide), use can be made of, substrates, and the like.

Said source (drain)/ drain (source) at a metal thin film electrode typically for electrode formation use in the art for metal or a conductive polymer may be used in, specifically for example, gold (Au), the (Ag), copper (cubic), chromium (Cr) and platinum (Pt) including metal or a conductive polymer or the like, use can be made of,.

Organic FET (field effect transistor) used in said semiconductor layer an organic semiconductor material commonly used in the art for an organic semiconductor layer for solidifying or may be used in polymer, specifically for example, pentacene (pentacene) or the like for solidifying including (Small molecules) material and poly (3- [...]) [Poly (3-hexylthiophene)] or the like, use can be made of, including polymer.

Perfluoropolyethers of ethyl thread column substituted phenyl [...] of the present invention formula 1 compound is applied the gate insulating material introduced organic for fabricating thin film transistor. off at the first and the second method.

First, bottom microcontact organic for fabricating thin film transistor describes a method. Furthermore, Figure 6 shows a ethyl thread column substituted phenyl [...] said formula 1 also perfluoropolyethers of polymerized compound comprises the polymer of formula 2 battery which is manufactured by using the organic gate isolating member are photograph at a with lithography electrode microcontact bottom mirror arrays comprises the following steps for producing organic thin-film transistor device shown one example of method is flow of.

I.e., substrate, perfluoropolyethers of said formula 1 compound ethyl thread column substituted phenyl [...] including applying a solution and dry next step, the plurality of segments is formed on the gate insulating layer. Gate the substrate is silicon wafer substrate, ITO (indium tin oxide) may be used in substrates, and the like, thereon dissolving in a solvent compounds of said formula 1 coating a polymerization at high temperature. said propanamines solvents comprise trialkylamines (tetrahydrofuran, THF), acetone, chloroform, dichloroethane, ethane (tetrachloroethane) benzoic acid, and cyclohexanone (cyclohexanone) is provided to select may be used in, coating a spin coating method, dip coating, drop casting the doctor blade and the like usual method or a solution application method for an input method may be selected. Of the existing method when the gate insulating material in constructing the polymer filtering filter cartridge a higher layer from being lost layer lower the solution method or a solution application method reasons corresponding advertisement based on the shown list is difficult, the present invention refers to said formula 1 a new composition represented by a purple ethyl thread column substituted phenyl [...] this activity by allowing compounds can be process solution. After coating said thermal sum ethanol and isopropanol, n in vacuum or inert gaseous environment, thermal said mispairing of 150 ∼ 250 °C conditions, 1 ∼ 3 time (or thermal ROM for storing programs complete point and a location wherein the crane can) can be performed during.

Next, said gate insulating layer, wherein the device has source (source)/ drain (drain) electrode layer is patterned and then for attaching flat paint polymerization ultraviolet by irradiating it with UV-rays is formed on electrode (drain)/ drain (source) source.

A manufactured by using such AlN crystal substrate integrally the photo electrode. More preferably said source (drain)/ drain (source) method (shadow mask) mask shadow electrode formed by an preferably in low leak current.

Source and drain electrodes using integrally electrophotographic gold characters or graphics the Ag alloy layer. The photo method for integrally after for attaching flat (PR6612) paint photopolymer, ultraviolet light light by using the micro by polymerizing the electrode to control the. Electrode electrode (drain)/ drain (source) for said source for depositing a metal the deployment (develope) form a storage electrode composed of the Ti. Forming a tunneling oxide layer and an electrode composed of the Ti layer, integrally electrophotographic, organic shadow mask is solution resisitivity and good mechanical properties a corresponding demand, reported existing organic insulating material, poly vinyl phenol [poly (vinylphenol)], polystyrene [poly (styrne)], polymethylmethacrylate [poly methyl methacrylate], or the like, that has hands in leakage. properties will be degraded die for semiconductor with increase of current. Furthermore, polyimide easy electrophotographic lithography [poly (imide)] family of insulating material polymer are low cost units which not oxide solution, 300 °C or more thermal oxide layer is interposed is to make it possible to produce substrate suitable for the preparation of insulating material is not material. Method or a solution application method of the present invention organic an insulating material is applied after polymer state sum thermal the air discharge is a leak current electrophotographic large area without increasing. electrode by using integrally.

Said a metal gold (Au), the (Ag), copper (cubic), chromium (Cr) and platinum, use can be made of, is provided to select (Pt). On the storage electrode layer of the organic semiconductors said senses a rotation velocity of the disk solution is applied and annealing the semiconductor layer has a first including prepare organic thin film transistor. Said (pentacene) pentacene well-known a semiconductor, components and blood circulation of the scalp PC (CuPc) series, thiophene (sexithiophene) and fluorene series (fullerene derivative) for solidifying organic system such as polymer system organic single molecules and thiophenes, poly (3- [...]) [poly (3-hexylthiophene)], such as fluorene based polymer [poly (9, 9-dioctylfluorene-co-bithiophene)] may be used in organic semiconductors, them chloroform (chloroform), toluene (toluene), then, to coating the trichlorobenzene (chlorobenzene), is formed on layer is heat treatment.

An organic semiconductor said spin coating the coating solution, dip coating, drop casting the doctor blade and the like can be selecting a method of, 80 ∼ 150 °C the heating conditions, 10 ∼ 60 minutes (or reaction end point of a) it is preferable that the performed during.

Microcontact a top said similar organic thin film transistor method contact top in the process for forming the organic thin film transistor, different point an insulating material layer the semiconducting layers located either on a copyright 2000.

said method also photograph of the organic devices produced by-adsorbers shown in 7, a plurality of insulators conductive organic insulating layer on a second clean been.. A transparent substrate a device manufactured by using such AlN crystal substrate applicable element transparent electrically. shown that.

Figure 8 prepared organic insulating film as graph indicating a electrical properties, electric current is 10^-9 A shows over flow in a hereinafter, is provided to increase insulating and excellent can be viewed. Also in the embodiment 2 Figure 9 shows a microcontact bottom produced by electrical properties of organic thin-film transistor device is a graphical representation indicating a, polymer alkylthiophene relationship with the derma when applied, 1.8 x 10^-3 cm2/Vs of charge transport and a 8.3 x 10⁶ non for killing an excellent balance between strength and hole blades, presenting a an article on a.

Hereinafter, embodiment of the present invention specifically, it should based aspect, and/or at least two different embodiment then the present invention is limited not.

In the embodiment 1: synthesis of compound

A represented by of the present invention formula 1 ethyl new column substituted phenyl [...] an alkali-soluble polymer resin compound polymerization of the polymer of formula 2 to the next one example for synthesizing shown in 1 known as a raw material of the.

with base Oro vinyl jade sheave wool benzene triple as the starting material (4-(trifluorovinyloxy) bromobenzene) the widely known a method (American patent 5,066,746 call reference) been utilizing a, Oakwood by cylinder to have a material stored in server Company.

Low temperature next reactor was that they travel within a -78 °C the crome.

I.e., 3 g (12 mmol) of 30 parts by weight of diethyl with base Oro vinyl jade sheave wool benzene 50 milliliter is dibutyl phthalate or dimethyl-soldering while maintaining a high nitrogen atmosphere 7 milliliter (12 mmol) of adaptation is slowly blended 1.7M-butyl lithium (butyllithium). A triple substituted lithium trichlorosilane phenethyl with base Oro vinyl jade sheave wool benzene. reactive with (phenethyltrichlorosilane). 1 g (4 mmol) after temporal extent 1 solution of phenethyl of trichlorosilane and blended, 1 temporal extent after temperature up a high temperature to the normal temperature. Herein forming 50 milliliter of water is poured in the oil of barbecued poultry an evaporation process is performed to evaporate organic solvent and the residual coverage then silica gel separation device 1b using a purified compounds obtained (yield 15%).

Said compounds of organic 1b THF (tetrahydrofuran) as a solvent, acetone, chloroform, dichloroethane to has a degree of water solubility of more than 40 weight %.

The structure of said formula 1b¹ H-NMR and¹⁹ F-NMR corresponding advertisement based on the shown list analyzed through, also 1 and 2 also respectively¹ H-NMR and¹⁹ F-NMR revealed a result of the spectrum. Said fluorine, such as 1 known as a raw material of the presented in pen ethyl thread column containing using heterogeneous ionexchange membranes and heat when the application of heat (trifluorovinyl) is 2p + 2p vinyl fluorine by formula 1b is formed is ten temporary bridges[...] cycle while formula 2b and formed in the form of polymer polymer.

Figure 3 said formula 1b is preparing [...] is polymer presenting the form a formula 2b..

Figure 4 said formula 2b represents resistance to organic solvent as a graph, organic solvent (chloroform) washed with polymer consisting of formula 2b not varying in their thickness of polymer film absorbing UV-Vis. spectrum.

Figure 5 shows a also after said organic by washing with solvents of formula 2b unchanged surface structure of atomic force microscope into each other (Atomic force microscopy, AFM) presenting the portion is confirmed with a pictorial Image in..

In the embodiment 2: organic for manufacturing thin film transistor

Silicon or ITO (indium tin oxide) on a substrate, said in the embodiment 1 monomeric layer insulating material produced by the benzoic acid monomer formula 1b 20 weight % ethane solvent melt concentration 1000 rpm rotational speed, such that the first 60 seconds after spin coating, drying has been, a nitrogen ambient under by ten temporary bridges by the application of abnormal temperature 180 °C of formula 2b have been synthesised polymer.

Source and drain electrodes using integrally electrophotographic gold characters or graphics the Ag alloy layer. The photo method for integrally after for attaching flat (PR6612) paint photopolymer, ultraviolet light by using the micro light form electrode by polymerizing the metal electrode after fabricating a e-beam (beam) or thermal deposition method (thermal) developing on the resultant structure by etching the clasp (develop) was produced the electrode through the process.

For metal deposition method through e-beam (beam) 10^-6 Torr atmosphere target of 0.3 Å / s is formed to allow the plating solution at a speed lower. The, width 1 millimeter, width 5 micro pattern of m have been produced.

A organic semiconductor material on said pattern [...] chloroform to 1 milligram/ml to 2000 rpm rotational speed, such that the first senses a rotation velocity of the disk spin coating and 40 seconds, 120 °C to increase the crystallinity in 10 minutes was the application of heat.

Experiment e.g.: device for analyzing characteristic of

Device produced by said in the embodiment 2 for the characteristics of a semiconductor testing device using such that the organic field effect transistor measuring characteristics corresponding advertisement based on the shown list, result to the computer of the also showed to 9.

According to current ratio also 9 10⁶ the ability to transistor are used, and emits a nice or more constructed with a device.