ARRANGEMENT CVD METHOD, AN APPARATUS THEREOF, AND A COMPUTER READABLE RECORD MEDIUM FOR PROCESSING SEMICONDUCTOR FORMING A PRODUCTION LAYER ON AN OBJECT
The invention which it sees, arrangement CVD (with the thing, specially in about batch chemical vapor deposition) method and system the blood of semiconductor wafer etc. (in about the semiconductor control technique which forms the product screen in) control bodies as a matter of the thing is. From here, it is a semiconductor control, the wafer or LCD (Liquid Crystal Display) with same FPD (in the blood control body as a matter of Flat Panel Display) suspicion separation borad etc. semiconductor layer and insulation layer, forms defiant layer etc. in pattern of prescribed and with, to encounter wiring which in the blood control body as a matter of is connected in the semiconductor device or the semiconductor device, in order to manufacture the infrastructure which includes electrode etc. it meat the various branch control which is executed. There is to manufacture of the semiconductor device which composes a semiconductor integrated circuit, in the blood control body and the semiconductor wafer, characteristic just, the etching, oxidation, diffusion and dog quality (the various control of reformation) etc. does For example,. Characteristic of this type with the control is started just For example in Japanese opening to the public patent public information criticism 09-077593 unit the same every lobe (single-substrate) characteristic just system or, with it is started For example in Japanese opening to the public patent public information 2004-006801 unit characteristic of same arrangement it does just from within installing,. 5 is the rough block diagram which shows the work example of hitherto arrangement CVD system. For example to the case which forms the silicon oxidation screen, the bell style () within control courage (2), the blood control chain semiconductor wafer (W) it accommodated this in the condition which in wafer boat (4) it supports with many item. In order to besiege a control courage (2), and with the heater (6) For example at temperature of prescribed and 600℃ degree the wafer (W) it heats. From the gas supply clerk, it spills the silicon materials gas and the ozone the reaction gas which becomes accomplished For example with. These gas within control courage (2) with direction under at elongation (extend) the dispersive nozzle which it does (8 and 10) the multiple gas participle worker which is formed (8A and 10A) from it was a discharge within control courage (2) and it made. Also, times organization which it forms on lower part of control courage (2) (12) from the vacuum pump (16) vacuum it sucked the within evacuation orgin (14) with control courage (2) where it has. Like this it does, it maintains characteristic of the silicon oxidation screen it does a control courage (2) at pressure of prescribed and a control just. Recently, semiconductor integrated circuit more, to a manufacturing process of the semiconductor device and (it accompanies to) accumulation and a plaster panel ceiling three reconciliation demand, there is ten past records (history) it reduces, improves the quality of the device. the thing is desired, to make There is to processing unit of the bell style and it stands but, the improvement of the semiconductor treatability which it follows in like this demand becoming accomplished is desired. For example, characteristic just a materials gas lamp intermittently, the layer of thickness of element level and a method there is to CVD where it is a kind of control, it supplies the atom or 1st floor or possibility layer it repeats characteristic just under there is. Like this characteristic the method comes to name ALD (Atomic Layer Deposition) MLD (Molecular Layer Deposition) as just, generally or in compliance with this, if it does not expose the wafer like that to high temperature, the fact that it does the control which it does in objective possibly becomes. In compliance with ALD or MLD with the system which it shows in 5 the case which does the characteristic screen of the silicon oxidation screen with afterwords does a same fabrication. Namely, the conversion valve which supplies the silicon materials gas (8B) it comes and, the conversion valve which supplies the ozone which is an oxidation gas) gases alternately (10B) to fabricate, the sheep (it supplies. Also, the evacuation orgin (14) escape valve (14B) the valve it folds but a control courage (2) undergarment pressure (opening degree) it regulates, it regulates. 6 in compliance with ALD with the system which it shows in 5 with condition of each valve of the case which does the characteristic screen of the silicon oxidation screen is the graph which shows the relationship with control courage undergarment pressure. 6 (A) the conversion valve of the materials gas (8B) it shows a condition, 6 (B) the conversion valve of the reaction gas (10B) it shows 6 (C) the escape valve of evacuation orgin (14B) condition (the valve it folds but a control courage undergarment pressure) it shows, 6 (D) it shows a condition. Absorption process (T11) with, exhaustion process (T12) with, reaction process (T13) with, exhaustion process (T14) the condensed water meeting it repeats the cycle when it includes in this order from the method which it shows in 6. Absorption process (T11) from, 6 (A) like it shows and, the conversion valve of the materials gas (8B) in the condition being opened and the silicon materials gas and in the surface it did it supplied the wafer (W) it absorbs the gas it made. Reaction process (T13) from, 6 (B) like it shows and, the conversion valve of the reaction gas (10B) in the condition being opened and it does the ozone which is a reaction gas and it supplies it reacts with the materials gas which it absorbs in the wafer surface as a matter of thin SiO2 it closes and it forms. Exhaustion process (T12 and T14) from, the escape valve (14B) in the condition being opened, the materials gas and the reaction gas it does it does not supply not to be, it exhausts the within control courage (2). Atomic level the thin film of thickness of element level 1st floor is formed or in 1 cycle. Each time of cycles with the enemy layer box the product guard which has the thickness of prescribed it is formed the thin film which is formed. 1 cycle public opinion absorption process (T11) and reaction process (T13) time respectively 60sec degree and exhaustion process (T12 and T14) the time is 10sec degree. In compliance with this arrangement CVD method, if it does not expose the wafer like that to high temperature, the fact that it does the control which it does in objective possibly becomes. But, in compliance with the invention people whom it sees, under the after alcoholic beverage like and, to arrangement CVD method of this type, the membrane (the membrane), the base foot (throughput) and, it is discovered in about materials gas consumption that it has the margin of improvement from point of quality. The invention which it sees, it provides an arrangement CVD method and the system which have the quality which improves the fact that on about the membrane, the base foot and materials gas consumption in objective. First point of view of the invention which it sees, arrangement CVD (as the semiconductor control suspicion arrangement CVD method in compliance with batch chemical vapor deposition) systems, minute description system, at the length which accepts the blood control body of the condensed water from within long control courage and minute description control courage the minute description blood control body interval, it piles up and it piles up and the materials gas valve which regulates the supply of the minute description materials gas as the reaction gas supply clerk who the reaction gas within the materials gas supply clerk and minute description control courage, it supports it does not see nine () it comes, as the materials gas supply clerk who supplies the materials gas within minute description control courage, includes suppliesIt includes the reaction gas valve which regulates the supply of the minute description reaction gas, within the reaction gas supply clerk and minute description control courage as exhaustion orgin exhausts, it includes the escape valve which regulates a displacement, it has an exhaustion orgin, the minute description method the condensed water meeting repeats the cycle below and each time with the enemy layer box in order to form the product screen which has the thickness of prescribed in the minute description blood control body as a matter of, it is composed the thin film which is formed, from here the minute description cycle, the minute description materials gas absorption as absorption process, the very first makes the minute description materials gas valve in the minute description blood control body as a matter of Only first duration in the condition in the condition being opened being shut after one with the box it supplies the minute description materials gas within minute description control courage, the minute description reaction gas valve in the condition being shut and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the minute description escape valve it maintains in the condition being shut and within minute description control courage it does not exhaust, in absorption process and afterwords, from within minute description control courage as the first intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve it maintains in the condition being shut and it does not supply the minute description materials gas and the minute description reaction gas within minute description control courage not to be,The minute description escape valve it does in the condition being opened and within minute description control courage it exhausts, in first intervension process and afterwords, with the minute description materials gas which absorbs the minute description reaction gas in the minute description blood control body as a matter of as reaction summer solstice reaction process, the minute description materials gas valve it maintains in the condition being shut and it does not supply the minute description materials gas within minute description control courage not to be, the minute description reaction gas valve it does in the condition being opened and it supplies from the condition prescribed being opened the valve it folds the minute description reaction gas within minute description control courage, the minute description escape valve but it does with it exhausts the within minute description control courage slowly small, reaction process and afterwordsWith, from within minute description control courage as the second intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve in the condition being shut and the minute description materials gas and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the valve it folds the minute description escape valve but being bigger the last of minute description reaction process and than it does in the condition being opened and it exhausts the within minute description control courage, it has a second intervension process. The second point of view of the invention which it sees executes remembers the program order for from the processor as a matter of, interpretation as the memory medium which is possible, the minute description program order in compliance with the minute description processor when being executed, controls an arrangement CVD system with the computer and it executes the method of first point of view. it is, it makes 3rd point of view of the invention which it sees, semiconductor control suspicion arrangement CVD (as chemical vapor deposition) systems, at the length which accepts the blood control body of the condensed water from within long control courage and minute description control courage the minute description blood control body interval, it piles up and it piles up and the materials gas valve which regulates the supply of the minute description materials gas as the reaction gas supply clerk who the reaction gas within the materials gas supply clerk and minute description control courage, it supports it does not see nine and, as the materials gas supply clerk who supplies the materials gas within minute description control courage, includes supplies, the reaction gas valve which regulates the supply of the minute description reaction gas inclusionIt does, as exhaustion orgin exhausts the within the reaction gas supply clerk and minute description control courage the escape valve which regulates a displacement, it includes, exhaustion orgin and, it has the control department which controls the operation of minute description system, the minute description control department is set in order to do an arrangement CVD method, in advance, the minute description method the condensed water meeting repeats the cycle below and each time with the enemy layer box in order to form the product screen which has the thickness of prescribed in the minute description blood control body as a matter of, it is composed the thin film which is formed, from here, the minute description cycle absorbs the minute description materials gas in the minute description blood control body as a matter of As process, only the very initial first duration in the condition in the condition being opened being shut after one with the box it supplies the minute description materials gas within minute description control courage, the minute description reaction gas valve the minute description materials gas valve in the condition being shut and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the minute description escape valve it maintains in the condition being shut and within minute description control courage it does not exhaust, in absorption process and afterwords, from within minute description control courage as the first intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve to maintain in the condition being shut, within minute description control courage It does not supply the minute description materials gas and the minute description reaction gas not to be, the minute description escape valve it does in the condition being opened and within minute description control courage it exhausts, in first intervension process and afterwords, with the minute description materials gas which absorbs the minute description reaction gas in the minute description blood control body as a matter of as reaction summer solstice reaction process, the minute description materials gas valve it maintains in the condition being shut and it does not supply the minute description materials gas within minute description control courage not to be, the minute description reaction gas valve it does in the condition being opened and it supplies from the condition prescribed being opened the valve it folds the minute description reaction gas within minute description control courage, the minute description escape valve but it does slowly small with minute description control Within courage it exhausts, in reaction process and afterwords, from within minute description control courage as the second intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve it maintains in the condition being shut and it does not supply the minute description materials gas and the minute description reaction gas within minute description control courage not to be, the valve it folds the minute description escape valve but being bigger the last of minute description reaction process and than it does in the condition being opened and it exhausts the within minute description control courage, it has a second intervension process. 1 is the rough block diagram which shows the arrangement CVD system which it follows in execution form of the invention which it sees. 2 in compliance with ALD with the system which it shows in 1 with condition of each valve of the case which does the characteristic screen of the silicon oxidation screen is the graph which shows the relationship with control courage undergarment pressure. 3a, 3b, the valve of the escape valve of evacuation orgin it folds but, is the plan which shows 2 variation examples of reaction process in about change. 4 is the graph which shows the result of the experiment which it follows in execution form. 5 is the rough block diagram which shows the work example of hitherto arrangement CVD system. 6 in compliance with ALD with the system which it shows in 5 with condition of each valve of the case which does the characteristic screen of the silicon oxidation screen is the graph which shows the relationship with control courage undergarment pressure. (It executes an invention the form for) The invention people whom it sees, in about problem from process of development of the invention which it sees, were to the semiconductor control suspicion arrangement CVD method and the system of hitherto this type and they researched. The result, the invention people whom it sees with it describes below got a same recognition. Because of this, absorption process (T11) from, 6 (C) like it shows and, the evacuation orgin (14) escape valve (14B) which degree it opens, the valve it folds For example but it sets at 30% degree, exhaustion there is the materials gas it flows and it forms in which degree doing wafer surface and as a matter of. Supply quantity of the materials gas of this case 10∼500sccm (because is standard cubic centimeter per minute) degree, 6 (D) like it shows and the control courage (2) undergarment pressure rises little by little rectilinear. Also, reaction process (T13) from, minute description absorption process (T11) time compared to the escape valve (14B) the valve it folds but it does a little, on a large scale the valve it folds For example but in order it sets at 60% degree and the reaction to happen efficiently. The flow of this case and the ozone 20slm (because is standard liter per minute) degree flow of the materials gas and compares it is many very, because of that, control courage (2) undergarment pressure, the very first in compliance with the introduction of the ozone the pressure rises in single stroke and short time after being saturated, it decreases little by little. Also, exhaustion process (T12 and T14) from the escape valve (14B) the valve it folds because of necessity will exclude the control courage (2) undergarment residual gas quickly but it sets with 100% and powerfully, vacuum it sucked. Also, the vacuum pump (16) before (it extends in) processes and continuously it is a drive grudge. But, (T11) there is an absorption process from tactical grudge hitherto method and the escape valve (14 B) which degree opening absorption process (T11) periods are spilling the silicon materials gas continuously. Because of this, the materials gas is consumed at vast quantity, specially at the width whose to the case where the materials gas is high price running expense (running cost) is big it increases. Also (T13) there is a reaction process and, the very initially in compliance with the introduction of the ozone 6 (D) point (P1) like it shows and the control courage (2) undergarment pressure is to an ozone and excessively, it rises, the ozone loses an activity and the thread bow (deactivate) it becomes and it is easy. Because of that, the characteristic screen it happens enough, but to center of the wafer the ozone does not reach enough from circumference department of the wafer and not to be characteristic guard disloyalty disjointing from the wafer center department it comes, the homogeneity within the cotton of the result and thickness decreases just. To the case which specially, wrench structure (trench structure) it has in the wafer surface, consuming the ozone to come the deep sea from the wafer center department just the actual condition which becomes thinner at the width where the thickness is big, namely loading (loading) effects occur remarkably. (T13) there is this case and a reaction process and it will be able to think that it does a control courage (2) undergarment pressure more lowly, but the pressure is low and characteristic it comes to be small at the width where the the is big just it is not desirable because the base foot decreasing. Below, it established in like this recognition and it was composed in about execution form of the invention which it is seen to refer to the plan, it explains. Also, there is to explanation below, approximately, it attaches an identical code in about the constitutional factor which has a function and the composition which are identical, the duplication explanation does in only the case which needs. 1 is the rough block diagram which shows the arrangement CVD system which it follows in execution form of the invention which it sees. This system as the materials gas is 3DMAS (tree D methyl amino threads which are an organic materials of Si containing) to use, as the reaction gas the ozone which is an oxidation characteristic gas (actual O3 and O2 mixtures of gases) it uses, as the thin film silicon oxidation (SiO2) characteristic the low atlas it is composed just just. Like it shows in 1 and, this characteristic system (20), interval just, it piles up and the semiconductor wafer of the condensed water which is piled up (the blood control body) it accepts and the control territory which it controls (23) the control courage which it provides on the inside (22) it has. Control courage (22) at length long secret communication (within; 24) with as a result of the outside (; 26) with it has the duplex tube structure which becomes accomplished. Secret communication (24) there is a ceiling and lower part addition it forms on that inside control territory (23) this it is provided in the cylinder body form which opens. As a result of the outside (26) secret communication (24) the outside interval of prescribed, in order to cover, and there is a ceiling and lower part addition it forms in the cylinder body form which opens. As a result of secret communication (24) with the outside (26) in compliance with the quartz together it is formed. Control courage (22) the diameter, to the case which For example the wafer where the diameter is 300mm (W) it accommodates, is set at 400∼500mm degree. Control courage (22) the internal dosage the wafer it will be able to accommodate (W) depends in buying over, to the case which the wafer of the maximum 150 every degree (W) it accommodates For example at 200 liter degree, it is set. As a result of the outside (26) the lower part department it formed in cylinder body form the stainless steel steal proposal manifold (manifold; 28) time absent (seal member of o-ring etc.; 30) it leads and secrecy (airtight) it makes do and it is made to connect. The manifold (28) in compliance with as a result of the outside (26) lower part addition it stews but meantime, the manifold (28) the city the base plate which it does not do (base plate) in compliance with it is supported. The manifold (28) the carrier of the ring form which is extended on 32) top and to be put, (32) it includes from that inner wall, the carrier (secret communication (24) lower part addition it raises it comes it is supported. Control courage (22) secret communication (to 24) within, does not see stands the quartz proposal wafer boat (34) is accommodated with means. The manifold (28) lower part opening it leads and the wafer boat (34) ascends and descends, it follows hereupon and control courage (22) control territory (23) about the wafer boat (34) becomes the road (load)/the road which freezes (unload). The wafer boat (34) to as the blood control body the semiconductor wafer of the multiple whip (W) raises with many item and it is put,. There is an execution form which For example, it sees in case, the wafer boat (34) to, For example the wafer where the diameter of 50∼100 every degree is 300mm (W) approximately the pitch which is identical (pitch) with support possibly becomes with many item. As a result of the wafer boat (34) quartz proposal keeping warm (40) it leads and the table (it raises it is put, on 42) top and. The table (42), the manifold (28) it opens and shuts lower part opening, For example the quartz or stainless steel steal proposal handguard body (36) the axis of rotation which it penetrates (it is supported on 44) top. The axis of rotation (44) to penetration department introspection fluidal time (46) this it is established For example, the axis of rotation (44) to under secrecy time it does and rotation possibly, it supports. The handguard body (36) circumference department and the manifold (28) to the lower part department, a courage undergarment time characteristic the time absence which becomes accomplished For example with o-ring etc. (38) is established, it maintains. The axis of rotation (44), the ascent and descent organization of boat elevator etc. (48) it was supported Oh the cancer (50) tip (distal end) it attaches For example. The ascent and descent organization (48) in compliance with, the wafer boat (34) and the handguard body (36) etc. it ascends and descends all. Also, Oh the cancer (in compliance with 50) undergarment rotary organizations when the axis of rotation (it becomes 44) these drives, the wafer boat (34) rotates, it follows hereupon and the wafer boat (is a perpendicular where 34) coat wafers pass their center axis and in the center it rotates. Also, the table (42) the handguard body (to fix with 36) sides and to form, a control without the wafer boat (34) to rotate. one the wafer (W) in order to do, the chart it is good, it makes Control courage (22) in order to envelop, the adiabatic casing (51) this it is established. The adiabatic casing (51) it puts out and as a matter of to, control courage (22) undergarment atmosphere and the wafer (W) the heater which it heats (52) is established. The heater (52) as, it pushes and (contamination) not to be it ascends and descends * the carbon wire where the toughness and moderateness quality is excellent (carbon wire) etc. it is used. Control courage (22) secret communication (to 24) within, the heater (52) it controls the thermocouple for (thermocouple; The city does not do not being) is established. The manifold (28) to side department, control courage (22) undergarment control territories (23) it supplies the control gas of prescribed the gas supply addition for it is connected. The gas supply department includes, the materials gas supply clerk (54), the reaction gas supply clerk (56) and, the purge gas supply clerk (58). The materials gas supply clerk (54) as the silicon materials gas it supplies 3DMAS gases. The reaction gas supply clerk (56) as the reaction gas the ozone gas which is an oxidation gas (actual O3 and O2 mixtures of gases) it supplies. The purge gas supply clerk (58) as the purge gas it supplies the inactive gases and N2 gases For example. To the materials gas and the reaction gas according to necessity the double meaning carrier gases which are suitable and N2 gases are mixed For example. But, in order to do explanation easily, only the case which needs to about the carrier gas it refers from below. Also, as for this purge gas or the carrier gas, it substitutes N2 gases and Ar, the gas of He etc. (rare gas) it will be able to use. Concretely, the materials gas supply clerk (54), the reaction gas supply clerk (56) and, the purge gas supply clerk (58), the manifold (28) it penetrates the side wall in internal and secret communication (from 24) within it bents the gas dispersive nozzle which becomes accomplished in the quartz tube which extends (60, 64 and 68) it has respectively, to upward and (1 reference). Each gas dispersive nozzle (60, 64 and 68) to, that direction (direction under at) to follow for a long time and the wafer boat (34) coat wafers (W) in order to extend in the whole, gas participle worker of the condensed water (interval of 60A, 64A and 68A) these prescribed, it is formed. Gas participle worker (60A, 64A and 68A), according to necessity, when supplying the gas of confrontation respectively, approximately uniformly with horizontal direction, gas, discharge the wafer boat (the wafer of 34) coat condensed water (W) about it forms the gas type which is parallel. Gas dispersive nozzle (60, 64 and 68), gas supply line (gas passage; 62, 66 and 70) it leads, gas circle of 3DMAS gases, O3 gases and N2 gases (54S, 56S and 58S) it is respectively connected. Gas supply line (to 62, 66 and 70) top, every flow right control (mass flow controller) with the same flow controller (62A, 66A and 70A) comes the conversion valve (62B, 66B and 70B) is established. In compliance with this, it converts the supply and a standstill of 3DMAS gases, O3 gases and N2 gases with together respectively flow to control, supply possibly it becomes. The gas dispersive nozzle (60, 64 and 68), secret communication (gathering it is established on 24) undergarment Japan sides (from 1 with relationship plan space to make to be caused by, the gas dispersive nozzle (68) the different gas dispersive nozzle (60, it shows on 64) about opposite sides but). The gas dispersive nozzle (60, 64 and 68) about the low on large direction secret communication (24) gas circulation worker of the condensed water where the diameter is big in the side wall (follows the low directions at 72) this and arrangement it is formed. Between the wafer it leads and each gas which flows with horizontal direction leads and gas circulation worker (72) as a result of secret communication (24) with the outside (26) with gap between (74) with it flows. As a result of the manifold (28) to upper side, secret communication (24) with the outside (26) with gap between (74) the boat organization which becomes the chimney (76) is formed, conceives the organization (76) to control courage (22) within under vacuum sucking evacuation orgin (78) is connected. The evacuation orgin (78) boat organization (76) the exhaustion line which is connected (80) it has, this exhaustion line (80) to control courage (22) within the vacuum pump evacuation (82) comes, the valve it folds but with change Sikkim control courage (the escape valve which regulates 22) undergarment pressures (80B) is established. The escape valve (80B) the valve it folds but regulation possibly at price of option, with becoming, together, development () and total abolition () there is a possibility of doing, it will be able to intercept an exhaustion completely. Also characteristic just system (20), the week when it becomes accomplished with computer etc. it controls the operation of the system whole () controls department (84) it has. The subject fisherman (84), it breaks to this but memory department (86) according to the control hour blood which is remembered in advance, just according to thickness of the screen which For example, is formed or condition of creation etc. the low of the after alcoholic beverage does an arrangement CVD control. This memory department (86) to also, just the thickness of control gas flow and the screen or relationship with creation is remembered as control data in advance. Consequently, the subject fisherman (84) the control city which these people are remembered it blooms but it will be able to control 52) etc. it establishes in control data, the ascent and descent organization (48), the gas supply clerk (54, 56 and 58), evacuation orgin (78), the heater (. Also, the memory medium, the hard disk where For example, the magnetic disk ([phul] rack hour the disk and the hard disk (one example is included memory department (86)) etc.), the optical disk (the CD, Dvd etc.), the magneto the mote curl disk (MO etc.), is semiconductor memory etc. In afterwords, it uses the system which it shows in 1 and the arrangement CVD method which it comes to do (ALD MLD characteristics) about it explains what is called or just. From this arrangement CVD, in compliance with ALD or MLD the semiconductor wafer (W) it forms the silicon oxidation screen at. It respects this, the wafer (W) the control territory which accepts (the ozone which is 3DMAS gas which is a silicon materials gas 23) within and an oxidation reaction gas (it supplies O3) gases selectively. It follows hereupon, the wafer (W) it absorbs forms the thin film of the silicon oxide which it reacts with 3DMAS gases which the wafer (W) are absorbed an absorption process and the ozone gas in the surface the reaction process which alternately and the condensed water meeting it repeats it makes 3DMAS gases in the surface. Concretely, in compliance with the fabrication below characteristic it advances a control just. Namely, characteristic just system (20), the semiconductor wafer (W), when being a hold status which has not become the road to, control territory (23) process temperature compared to it is maintained at low-end temperature. To the control at the time of, first of all, the wafer of the multiple whips and For example 50 whips (W) it does not see the wafer boat of one normal temperature (34), the control territory which is set at temperature of prescribed (23) (control courage (22) months (hot wall) conditions) within it is a road grudge from below. Also, the handguard body (36) with control courage (22) with closing the lower part orifice, control courage (it shuts tightly 22) within. And, control territory (23) vacuum it sucks and it sets at process pressure of prescribed. The heater (52) with augmentation Sikkim, control territory (23) characteristic until control suspicion process temperature it heats supply war potential with this together just. Control territory (23) with it supplies the control gas of prescribed control territory (after being stabilized at 23) this process pressure and process temperature, necessary to it does the characteristic screen it is. Flow it controls 3DMAS gas and the ozone gas from namely here and each gas supply clerk (54 and 56) the gas dispersive nozzle (60 and 64) from control territory (23) with it supplies respectively. Also, the evacuation orgin (78) escape valve (80B) the valve it folds but it regulates and control courage (22) undergarment pressures it is a control grudge. 3DMAS gases are supplied the gas dispersive nozzle (60) gas participle worker (60A) from, the wafer boat (the wafer of 34) coat condensed water (W) about in order to form the gas type which is parallel. Between this, 3DMAS gases are activated, control territory (23) in compliance with a heating temperature or in the valence wafer as a matter of the element of 3DMAS gases the element of the disjointing product which or, in compliance with their disjointing occurs they are absorbed. Meantime, the ozone gas is supplied the gas dispersive nozzle (64) gas participle worker (64A) from, the wafer boat (the wafer of 34) coat condensed water (W) about in order to form the gas type which is parallel. The ozone gas is activated, control territory (23) in compliance with a heating temperature with disjointing product etc. or valence and the wafer (W) it is originated from 3DMAS gases which are attaching the element of the ozone gas the element of the disjointing product which or, in compliance with their disjointing occurs it reacts. It follows hereupon and the wafer (W) the thin film of the silicon oxide is formed at. Also, this and disjointing product etc. it is originated with an opposition, from the ozone gas the wafer (W) disjointing product etc. it is originated to the place where it is attaching from 3DMAS gases it flows and all in case, the reaction which is identical happens, or, the wafer (W) the thin film of the silicon oxide is formed at. With tactical one absorption process, it does not supply 3DMAS gas and the ozone gas from gap of reaction process and gap of reaction process and absorption process and not to be, control courage (it does the exhaustion process which exhausts 22) within. Also, according to necessity, as the purge gas N2 gases flow are controlled from exhaustion process and the gas supply clerk (58) the nozzle (68) from they are supplied. Also, control territory (23) the gas ingredient which it passes leads and gas circulation worker (72) as a result of secret communication (24) with the outside (26) with gap between (74) with it flows and it enters. As a result of after that, these gas ingredient the outside (26) the boat organization which is formed in the lower part (76) from evacuation orgin (78) in compliance with it exhausts. 2 in compliance with ALD with the system which it shows in 1 with condition of each valve of the case which does the characteristic screen of the silicon oxidation screen is the graph which shows the relationship with control courage undergarment pressure. 2 (A) the conversion valve of the materials gas (62B) it shows a condition, 2 (B) the conversion valve of the reaction gas (66B) it shows 2 (C) the escape valve of evacuation orgin (80B) condition (the valve it folds but a control courage undergarment pressure) it shows, 2 (D) it shows a condition. Like it shows in 2 and, the characteristic which it follows in this execution form the condensed water meeting it repeats the cycle when from method, absorption process (T1) with, first exhaustion process (T2) with, reaction process (T3) with, second exhaustion process (T4) it includes just in this order. Absorption process (T1) from, 2 (A) 3DMAS gases and like it shows and, the conversion valve of the materials gas (62B) it opened and it supplied the wafer (W) it absorbs disjointing product etc. it is originated from this gas in the surface it made. Reaction process (T3) from, 2 (B) the ozone gas and like it shows and, the conversion valve of the reaction gas (66B) it opens and it supplies it reacts with disjointing product etc. it is absorbed in the wafer surface as a matter of thin SiO2 it closes and it forms. Exhaustion process (T2 and T4) from, it does not supply 3DMAS gas and the ozone gas not to be, control courage (it exhausts 22) within. Also, the vacuum pump (82) former process (T1∼T4) it extends and continuously it is a drive grudge. Atomic level the thin film of thickness of element level 1st floor is formed or from tactical one 1 cycle. Each time of cycles with the enemy layer box the product guard which has the thickness of prescribed it is formed the thin film which is formed. 1 cycle public opinion absorption process (T1) and reaction process (T3) time respectively 2∼120sec and For example 60sec degree and exhaustion process (T2 and T4) the time is 2∼20sec and For example 10sec degree. Also, exhaustion process (T2 and T4) characteristic just the base foot of control in order the improvement chart if it omits. It sees concretely, absorption process (T1), 2 (A) like it shows and duration of very initial prescribed (t1) only the conversion valve of the materials gas (62B) in the condition being opened it does, after of that the materials gas temporarily does in the condition being shut immediately and duration of prescribed (t1) bays it supplies. This time, 2 (C) in the condition which closes like it shows and, absorption process (T1) it extends in the whole and the escape valve of evacuation orgin (80B) it maintains. This piece is to a hitherto method and 6 (C) like it shows and the escape valve (14B) the valve of prescribed it folds with but it opens and the absorption process evacuation (T11) with it differs. (T1) there is an absorption process from the execution form which consequently, it sees and, the materials gas (3DMAS gases) control courage (it confines it flows and 22) within and at the outside from the condition which is not, the wafer (W) the silicon materials gas is absorbed in the surface. Because of this, the supply quantity of the materials gas being few, despite, the absorption of the materials gas is made to promote to about the wafer surface. Duration of minute description prescribed (t1) route, absorption process (T1) it is a within 1∼50% scopes at about time, to be desirable it is 5∼30% scope labyrinths and (For example, to about T1 is to a scope, t1=2∼60sec). When duration of minute description prescribed (t1) these 50% it sees it becomes larger and the consuming curtailment effect of the materials gas does not become larger like that and in order not to be it is not desirable it is not, also the materials gas is wasted because also the absorption quantity of the materials gas in the wafer surface being saturated. Also, this time the flow of the materials gas is 10∼500sccm degree. Also, (T1) there is an absorption process and control courage (22) undergarment pressures suddenly the very initially, after rising, the conversion valve of the materials gas (62B) with closing, uniformly simultaneously, it becomes. This time the pressure it follows even in supply quantity of the materials gas but For example is 667Pa degree. When in afterwords, absorption process (T1) this it is ended, first exhaustion process (T2) with it executes. Before (it stands still the supply of) gases from here with together the escape valve of evacuation orgin (80B) with development to do, control courage (it exhausts 22) undergarment remaining atmospheres rapidly. Also, it supplies N2 gases which are this case and a purge gas and exhaust of the residual gas the promotion at the time of height atlas chart it is good. First exhaustion process (T2) in compliance with, control courage (22) undergarment pressures suddenly, it decreases (2 (D) reference). In afterwords, reaction process (T3) with it executes. From here, 2 (B) like it shows and the conversion valve of the reaction gas (66B) in the condition being opened, in) duration and it does reaction process (T3) before (it extends the ozone which is a reaction gas it supplies. This time, 2 (C) like it shows and the escape valve of evacuation orgin (80B) from the very first it does in the condition being opened, reaction process (T3) these it is advanced and according to those valves it folds but it does slowly small. This piece is to a hitherto method and 6 (C) like it shows and the escape valve of evacuation orgin (14B) the valve it folds but the reaction process which it maintains at 60% degree (T13) with it differs. It follows hereupon, the silicon oxidation screen a materials gas which the silicon materials gas which is an ozone gas which is this reaction gas and it absorbs in the wafer surface as the thin film which reacts it forms. The minute description ozone gas generally from the oxygen gas five it dozes but this writing (ozonizer) with occurrence at the time of height Zeeman, these cases and O3 gases in O2 gases 10 deposits % is included at consistency of degree, like this mixture of gases is actually used as the ozone containing gas. Reaction process (T3) from, the escape valve of evacuation orgin (80B) (T2) there is a first exhaustion process from here and duration of the very initial prescribed (t3) bays it maintains the escape valve (80B) the valve it folds a development condition, after that but level of prescribed, until 50% it decreased to a single stroke For example, after that, the valve it folds but level of prescribed, For example until 20% rectilinear slowly decrease. is, to make The supply quantity of the ozone which is this case and a reaction gas spills as 20slm degree, flow of the minute description materials gas compared to the reaction gas of vast quantity far,. 6 (D) the point which it shows (P1) like it shows and, the pressure rise which is sudden happens from hitherto method or the loading effect appears remarkably. Reaction process of method of the execution form which meantime, it sees (T3) from, duration of the very initial prescribed (the escape valve of t3) bay evacuations orgin (80B) it maintains in development condition, the valve after that it folds but after decreasing with 50% degree in single stroke, the valve it folds but slowly in addition decrease. is, it makes It follows hereupon, control courage (22) undergarments the pressure rise which is sudden loses, 2 (D) like it shows and approximately it rises rectilinear and slowly it goes. There is to this reaction process and the maximum pressure For example 133Pa (is 1Torr) degree. Like tactical one and, (T3) there is a reaction process, the escape valve of evacuation orgin (80B) it develops after that, the valve it folds but it does slowly small the very initially. This case, rise possibility it will make a pressure at the degree where the loading effect which is remarkable does not happen to be, namely, the such loading effect appears remarkably, point (P1) with it shows there is a possibility of removing the pressure rise which is sudden it is same. Because of this, promotion possibility it will make the reaction with the silicon materials gas which it absorbs in the ozone which is a reaction gas and the wafer surface. It changes and when it says, in order for the condition where the pressure is high to lose, the thread bow of the ozone is suppressed and the life is made to extend. It suppresses this result and a loading effect with together characteristic just the will be able to maintain the highly. Also, there is in a wafer surface and just the homogeneity within the cotton of thickness highly maintains with it makes possibly that together, also the base foot will improve. Duration of minute description prescribed (t3) route reaction process (T3) it is a within 1∼50% scopes at about time, to be desirable it is 5∼30% scope labyrinths and (For example, to about T3 is to a scope, t3=2∼60sec). When duration of minute description prescribed (t3) these 50% it sees it becomes larger, control courage (22) undergarment pressure rises make go to extremes and they are made to suppress and they are thrown away and the reaction of the ozone is hindered, characteristic the decreasing because the just it is not desirable. Also, the escape valve of evacuation orgin (80B) the valve the middle it folds but 50% and 20% (2 (C) reference) the reaction rate with the ozone and the silicon materials gas and not to pass in showing the example which only rises not to be, to consider the most it will pay in order to buy. Only, (T3) there is a reaction process, the escape valve (80B) the valve it folds but 100%) does most the confrontation first exhaustion process (T2) from the escape valve which is used (80B) the valve it folds and but equality (For example, the minimum value it is desirable to be an above 2%. If like this, reaction process (T3) this it was ended, second exhaustion process (T4) with it executes. Namely, it stands still the supply of the former gas with together the escape valve of evacuation orgin (80B) with development to do, control courage (it exhausts 22) undergarment remaining atmospheres rapidly. Also, it supplies N2 gases which are this case and a purge gas and exhaust of the residual gas the promotion at the time of height atlas chart it is good. It follows hereupon, control courage (22) undergarment pressures decrease suddenly (2 (D) reference). In compliance with an above, 1 cycle of the characteristic screen is ended. The condensed water meeting it repeats a minute description cycle and it does and the thin film and the namely silicon oxidation screen of thickness just it does in necessity it gets. Also, the escape valve (80B) the valve it folds, but development (the valve it folds but =100%) or total abolitions (the valve it folds but =0%) with it includes one condition from tactical one execution form. But, the escape valve of fact (80B) from, the valve it folds but from above 90% control courage (exhaustion virtue the which it shakes off (conductance) the development at the time of and approximately is identical about 22) within and it does not fluctuate especially. Also the valve it folds but from below 2% control courage (exhaustion virtue the which it shakes off the total abolition at the time of and approximately is identical about 22) within and it does not fluctuate especially. Consequently, there will be to a tactical one execution form, the escape valve (80B) 'development' the expression which is, 'the valve it folds but 90∼100%' will change with the expression which is and there is a possibility which it will say. Also the escape valve (80B) 'total abolition' the expression which is 'the valve it folds but 0∼2%' will change with the expression which is and there is a possibility which it will say. Also, from tactical one execution form, 2 (C) like it shows and reaction process (T3) from duration of prescribed (t3) bay escape valves (80B) it set in development condition. 3A, 3B, the valve of the escape valve of evacuation orgin it folds but, is the plan which shows 2 variation examples of reaction process in about change. (T3) there is a duration of prescribed from 3A variation examples and the valve it folds but until 50% it changes it made make rectilinear from 100%. From 3B variation examples, it extends in former duration of reaction process and the valve it folds but until 20% it changes it made make rectilinear from 100%. Only, these valve it folds but to showing the example where also the change only rises it does not pass. Also, the valve it folds but the change knows the straight line, curve like the stairway and in order to decrease in a step form or at condensed water phase, change is good. One of pieces which are important reaction process (T3) is to the commencement very first time and the escape valve (80B) the valve it folds but to set on a large scale, to be to this early stage and control courage (to suppress to suppress 22) undergarment pressure rises and the occurrence of loading effect. (T3) there is a reaction process and to the case which needs, the reaction gas and as the carrier gas in order to supply N2 gas or the inactive gas of gas lamp simultaneously, the chart it is good. Like it describes above and, in compliance with the execution form of the invention which it sees, the blood control body of the condensed water and the control courage the semiconductor wafer (W) it will be able to accommodate For example (22) the characteristic which it has system (20) it uses just, with absorption process reaction process, intervension duration (exhaustion duration) it lies between and it repeats alternately and in the blood control body the thin film it forms. From absorption process, the evacuation orgin (78) escape valve (80B) from the condition which closes the materials gas supply clerk (54) the conversion valve (62B) the duration of the very initial prescribed 3DMAS gases which are a materials gas and a silicon materials gas For example in 22) within temporarily and does in the condition in the condition being opened being shut immediately after one and control courage (in the blood control body it supplies it absorbs. it is, it makes From reaction process, the reaction gas supply clerk (56) the conversion valve (66B) in the condition being opened it does and control courage (supplies the reaction gas in 22) within with together, the evacuation orgin (78) escape valve (80B) the very first in the condition being opened to do, after of that the valve it folds but in order to do slowly small, and the reaction gas and the ozone with the materials gas it reacts it made make For example. It follows hereupon, it maintains and the membrane highly, it will be able to suppress at the width which is big the consumption of one without materials gas which also the base foot decreases. < Experiment > In order to evaluate the arrangement CVD method which it follows in tactical one execution form, it did the experiment below. Execution example (PE) as, there was to system of 1 city, according to the method which it shows in 2, it formed the silicon oxidation screen in the wafer as a matter of. (PE) there was an execution example, as the silicon materials gas it used as the reaction gas the ozone gas (10 deposits % with the mixture of gases where the ozone is included) it used 3DMAS gases, in the oxygen. The process temperature 550℃, process pressure (most confrontation) set with 1.2kPa. Absorption process (T1) the time changed, the conversion valve of the materials gas (62B) duration of prescribed of the condition being opened (t1) it fixes with 7sec. Meantime, reaction process (T3) the time fixed with 7sec, the escape valve of evacuation orgin (80B) duration of prescribed of development condition (t3) it fixed with 2sec. Absorption process (T1) time, at para meter (T1) there was the conversion valve of the materials gas (62B) the time when it is being shut, namely hall time (H) (=T1-t1) it changed an absorption process. Also, comparative example (CE) as, there was to system of 1 city, it followed in the method which it shows in 6, the condition other than operating of supply quantity of 3DMAS gases and each valve execution example (PE) comes under the conditions which are identical formed the silicon oxidation screen in the wafer as a matter of. Concretely, comparative example (CE) from, it supplied 3DMAS gases quantity execution example (PE) at 4 times, time an absorption process with 30sec. 4 is the graph which shows the result of this experiment. It is to 4, abscissa hall time, the breeder 1 cycle party decision characteristic the shows the just. Like it shows in 4 and, the comparative example which X gram supplies 3DMAS gases (CE) from, characteristic it was 0.13nm/cycle degree where the sprouts just. Meantime, decreases 3DMAS gases. X/4 grams the execution example which it supplies (PE) from, with the box characteristic the the approximately rose a hall time long just rectilinear to make When and, hall time approximately being 40sec, characteristic the comparative example where the sprouts just (CE) case and approximately identically, it became. Namely, when it sets a hall time above 40sec, despite decreasing the supply quantity of the materials gas at quarter equal comparative example (CE) case and approximately it was, it was ascertained that characteristic above that the comes to get the or just. Changing and saying, the fabrication of each valve like the method which it follows in execution form of the invention which it sees and with doing, comparative example (CE) comes the characteristic which is equal just the maintains the with together, it will be able to reduce at the width which is big the supply quantity of the materials gas. Also, tactical one execution example (PE) and comparative example (CE) about, it used the pattern wafer and their loading effect it evaluated. The wafer which is a pattern wafer (W) it forms the part of circuit pattern with to give an unevenness in the surface. From the pattern wafer, it compares in the even wafer and in order for gas consuming to come to be many, the loading effect appearing remarkably, it is easy. Result and comparative example of this evaluation (CE) thickness it brought honor to just from the pattern wafer as a matter of and the homogeneity was ±4.3% degree. Execution example (PE) thickness it brought honor to just from the pattern wafer as a matter of and the homogeneity was ±3.8% degree. Consequently, in compliance with the method which in execution form of the invention which it sees it follows, thickness it brought honor to just from the pattern wafer as a matter of and it was ascertained that it will be able to improve a homogeneity. < Fringe land example > As the silicon materials gas it uses 3DMAS gases from minute description execution form. The amino thread column total organic gas where instead of, the silicon materials gas is different, it is an amino thread which For example, BTBAS (non-[su] shaking off butyl amino threads is), 4DMAS (tetra kissing D methyl amino threads is), DIPAS (dee small pro will bloom) from it will be able to select. As the reaction gas it uses the ozone gas which is an oxidation characteristic gas from minute description execution form. The oxidation characteristic gas where instead of, the reaction gas is different, For example, from O2, N2O and NO it will be able to select. Also, it folds from Japanese opening to the public patent public information 2005-175441 unit but like and, in order to use the oxygen activity kind which occurs from under that pressure below 133Pa and a hydroxyl activity kind, the chart it is good. In compliance with an arrangement CVD method silicon oxidation guard characteristic it is rude from minute description execution form and it is. The invention which instead of, it sees is different and just, For example silicon nitrification just (SiN just) it rises the silicon it buys nitrification (SiON) characteristic the low will be able to apply just just just even in arrangement CVD method. The silicon nitrification screen characteristic the low to case, as the silicon materials gas with DCS (D claws the thread is), HCD ([heyk] buys with the claw the D thread is), is the thread just For example with TCS (tetra claws) to be it will be able to use, as the reaction gas it will be able to use NH3 etc. Also, the silicon buys the nitrification screen characteristic just the low to case, For example as the silicon materials gas to be it will be able to use the amino thread column total organic gas it will be able to use O3, O2, N2O, NO and NH3 etc., as the reaction gas. From minute description execution form, arrangement CVD method control courage (22) does from the batch processing system which is a duplex tube structure,. The invention which instead of, it sees, For example, the control courage only application is possible in the batch processing system which is a tube structure. As for the blood control body the semiconductor wafer is adumbrated, to this semiconductor wafer the silicon substrate or the compound semiconductor borad of GaAs, SiC and GaN etc. are included. Also, as the blood control body, it will be able to apply the invention which it sees even in the separation borad which it uses in liquid crystal display system or ceramic borad etc. PURPOSE: An arrangement CVD method, an apparatus thereof, and a computer readable record medium for processing semiconductor are provided to improve the property on layer quality, throughput, and raw material gas consumption. CONSTITUTION: An exhaust system(78) comprises a discharging valve for adjusting the amount of discharge. A controller(84) controls the operation of the apparatus. The controller is configured in advance to implement the arrangement CVD method. COPYRIGHT KIPO 2011 Arrangement CVD (with the semiconductor control suspicion arrangement CVD method in compliance with batch chemical vapor deposition) systems, minute description system, at the length which accepts the blood control body of the condensed water from within long control courage and minute description control courage the minute description blood control body interval, it piles up and it piles up and the materials gas valve which regulates the supply of the minute description materials gas as the reaction gas supply clerk who the reaction gas within the materials gas supply clerk and minute description control courage, it supports it does not see nine () it comes, as the materials gas supply clerk who supplies the materials gas within minute description control courage, includes supplies, supply of the minute description reaction gas It includes the reaction gas valve which it regulates, within the reaction gas supply clerk and minute description control courage as exhaustion orgin exhausts, it includes the escape valve which regulates a displacement, it has an exhaustion orgin, the minute description method the condensed water meeting repeats the cycle below and each time with the enemy layer box as the absorption process which the minute description materials gas in the minute description blood control body as a matter of in order to form the product screen which has the thickness of prescribed in the minute description blood control body as a matter of, is composed from here minute description cycle, absorbs the thin film which is formed, the minute description materials gas valve only the very initial first duration in the condition being opened grudge In the condition being shut after with the box it supplies the minute description materials gas within minute description control courage, the minute description reaction gas valve in the condition being shut and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the minute description escape valve it maintains in the condition being shut and within minute description control courage it does not exhaust, in absorption process and afterwords, from within minute description control courage as the first intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve it maintains in the condition being shut and it does not supply the minute description materials gas and the minute description reaction gas within minute description control courage not to be, the minute description escape valve the condition being openedWith it does and within minute description control courage it exhausts, in first intervension process and afterwords, with the minute description materials gas which absorbs the minute description reaction gas in the minute description blood control body as a matter of as reaction summer solstice reaction process, the minute description materials gas valve it maintains in the condition being shut and it does not supply the minute description materials gas within minute description control courage not to be, the minute description reaction gas valve it does in the condition being opened and it supplies from the condition prescribed being opened the valve it folds but the minute description reaction gas within minute description control courage, the minute description escape valve (opening degree) it does with it exhausts the within minute description control courage slowly small, in reaction process and afterwords, minute description From within control courage as the second intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve in the condition being shut and the minute description materials gas and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the valve it folds the minute description escape valve but being bigger the last of minute description reaction process and than it does in the condition being opened and exhausts has the within minute description control courage, the arrangement CVD method which a second intervension process. There is to a first clause, there is the minute description escape valve maintaining in the condition being shut, the valve of the minute description escape valve it folds to a minute description absorption process, but with 0∼2% with the box the arrangement CVD method which is defined. It is to first clause, minute description first and second intervension process the arrangement CVD method the fact that it supplies the inactive gas within minute description control courage. Is to first clause, minute description first and second intervension process the arrangement CVD method which neither the gas which is any within minute description control courage supplies. Is to first clause, minute description first duration the arrangement CVD method which has 1∼50% scope undergarment lengths of length of minute description absorption process. There is to a first clause, there is the condition minute description prescribed of the minute description escape valve being opened only the very initial second duration the minute description escape valve in the condition minute description prescribed being opened it maintains to a minute description reaction process, with the arrangement CVD method which it comes to get. Is to 6th clause, minute description second duration the arrangement CVD method which has 1∼50% scope undergarment lengths of length of minute description reaction process. There is to a 6th clause, there is to a minute description second duration and the condition minute description prescribed of the minute description escape valve being opened the arrangement CVD method which is identical with to be used from minute description first intervension process. There is to a first clause, is the minute description escape valve the arrangement CVD method which in the condition being shut it does not do to minute description reaction process. There is to a 9th clause, there is the valve of the minute description escape valve it folds to a minute description reaction process, but most the confrontation is most identical with a minute description first intervension process, the minimum value the arrangement CVD method which is an above 2%. There is to a first clause, is the minute description reaction gas valve the arrangement CVD method which in the condition being shut it does not do to minute description reaction process. There is to a first clause, the time of minute description absorption process is 2∼120sec, the time of minute description reaction process is 2∼120sec, each time of minute description first and second intervension process the arrangement CVD method which is 2∼20sec. There is to a 12th clause, the minute description first duration has 1∼50% scope undergarment lengths of length of minute description absorption process, that time the arrangement CVD method which is 2∼60sec. There is to a 12th clause, there is the condition minute description prescribed of the minute description escape valve being opened, only the very initial second duration the minute description escape valve in the condition minute description prescribed being opened it maintains to a minute description reaction process, with to come to get, the minute description second duration has 1∼50% scope undergarment lengths of length of minute description reaction process, that time the arrangement CVD method which is 2∼60sec. There is to a first clause, the minute description product screen buys, silicon oxidation just, the silicon nitrification from the army which just, becomes accomplished with the silicon nitrification screen the arrangement CVD method which is one it is selected. There is to a 15th clause, the minute description materials gas is the tree D methyl amino thread, it is it is dee small pro a thread with the D claw, a D thread with the claw it is it is it buys it is a non-[su] shaking off butyl amino thread, a tetra kissing D methyl amino thread, an amino thread which will bloom, from the army which with the tetra claw becomes accomplished with the thread column the arrangement CVD method which includes the silicon materials gas which is selected. Is to 15th clause, the minute description reaction gas, from the army which becomes accomplished with O3, O2, N2O, NO and NH3 the arrangement CVD method which includes the gas which is selected. There is to a first clause, the minute description product screen silicon oxidation guard, the minute description materials gas is the tree D methyl amino thread, it is it is a non-[su] shaking off butyl amino thread, a tetra kissing D methyl amino thread, dee small pro includes the silicon materials gas which is selected the arrangement CVD method which O3 and O2 mixtures of gases from the army which becomes accomplished with the amino thread column which, will bloom the minute description reaction gas includes. It executes it remembers the program order for from the processor as a matter of, interpretation as the memory medium which is possible, the minute description program order in compliance with the minute description processor when being executed with the computer which executes the method which in first clause, controls an arrangement CVD system with the computer and is recorded interpretation the memory medium which is possible. Semiconductor control suspicion arrangement CVD (with chemical vapor deposition) systems, at the length which accepts the blood control body of the condensed water from within long control courage and minute description control courage the minute description blood control body interval, it piles up and it piles up and the materials gas valve which regulates the supply of the minute description materials gas as the reaction gas supply clerk who the reaction gas within the materials gas supply clerk and minute description control courage, it supports it does not see nine and, as the materials gas supply clerk who supplies the materials gas within minute description control courage, includes supplies, it includes the reaction gas valve which regulates the supply of the minute description reaction gas, the reaction gas supply clerk and minute description As exhaustion orgin exhausts the within control courage, it includes the escape valve which regulates a displacement, exhaustion orgin and, it has the control department which controls the operation of minute description system, the minute description control department is set in order to do an arrangement CVD method, in advance, the minute description method the condensed water meeting repeats the cycle below and each time with the enemy layer box in order to form the product screen which has the thickness of prescribed in the minute description blood control body as a matter of, it is composed the thin film which is formed, from here, the minute description cycle, absorption as absorption process, the minute description materials gas valve makes the minute description materials gas in the minute description blood control body as a matter of Only the very initial first duration in the condition in the condition being opened being shut after one with the box it supplies the minute description materials gas within minute description control courage, the minute description reaction gas valve in the condition being shut and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the minute description escape valve it maintains in the condition being shut and within minute description control courage it does not exhaust, in absorption process and afterwords, from within minute description control courage as the first intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve to maintain in the condition being shut, within minute description control courage the minute description materials gas and the minute description reaction gas It does not supply not to be, the minute description escape valve it does in the condition being opened and within minute description control courage it exhausts, in first intervension process and afterwords, with the minute description materials gas which absorbs the minute description reaction gas in the minute description blood control body as a matter of as reaction summer solstice reaction process, the minute description materials gas valve it maintains in the condition being shut and it does not supply the minute description materials gas within minute description control courage not to be, the minute description reaction gas valve it does in the condition being opened and it supplies from the condition prescribed being opened the valve it folds the minute description reaction gas within minute description control courage, the minute description escape valve but it does with it exhausts the within minute description control courage slowly small, reaction processWith, in afterwords, from within minute description control courage as the second intervension process which removes the residual gas, the minute description materials gas valve and the minute description reaction gas valve in the condition being shut and the minute description materials gas and the minute description reaction gas within minute description control courage it maintains it does not supply not to be, the valve it folds the minute description escape valve but being bigger the last of minute description reaction process and than it does in the condition being opened and exhausts has the within minute description control courage, the arrangement CVD system which a second intervension process.
