산화물 소결체 및 반도체 디바이스

<Described in the form of the present invention embodiment >

Oxide sintered body in the form of the present invention which embodiment, indium and, as tungsten, zinc and tin; and a polyurethane composition oxide sintered including at least one of, as crystalline, as tungsten, zinc and tin at least one of double crystal phase including.. The present embodiment in the form of oxide sintered body, crystalline as including at least one of tungsten and zinc and tin, because it includes the double oxide crystal phase, oxide sintered body is formed by performing a oxide semiconductor film including a semiconductor device as an channel layer in TFT (thin film transistor), OFF thereof as well as the second current, use of a low drive voltage in a current OFF ON gate and can have a high.. In addition thermal conductivity of oxide sintered body. and can have a high.

The present embodiment in the form of oxide sintered body, and a pair of comb-like in addition as crystalline may include a on. The, oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, OFF thereof as well as the second current, use of a low drive voltage in a current OFF ON gate and can have a high.. In addition thermal conductivity of oxide sintered body. and can have a high.

The present embodiment in the form of oxide, sintered bodies crystalline as including at least one of tungsten and zinc and tin double oxide crystalline and used to determine the air volume in including phase and a pair of comb-like, oxide sintered body in end face of the shank of the of its cross-section and a pair of comb-like double oxide crystalline and double occupancy is area on total on stages which respond to a, 95% or more can be on 100% hereinafter. The, oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, disease and current OFF thereof, use of a low drive voltage in a current OFF ON gate and can have a high as well as, its properties in the main surface of the diode is, for can. In addition thermal conductivity of oxide sintered body. and can have a high.

The present embodiment in oxide sintered body in the form of, oxide sintered body in end face of the shank of the of its cross-section tungsten and zinc and tin including at least one of double crystal phase has an area of occupancy is a double oxide crystalline stages which respond to a, 0% 50% hereinafter and present can be on. The, oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, disease and current OFF thereof, use of a low drive voltage in a current OFF ON gate and can have a high as well as, its properties in the main surface of the diode is, for can. In addition thermal conductivity of oxide sintered body. and can have a high.

The present embodiment in oxide sintered body in the form of, double crystal phase, ZnWO₄ type phase, Zn₂ W₃ O₈ type phase, WSnO₄ type phase, WSn₂ O₅ type phase and WSn₃ O₆ selected from the group consisting of type phase at least 1 species may include of crystal phase. The, oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, OFF thereof as well as the second current, use of a low drive voltage in a current OFF ON gate and can have a high.. In addition thermal conductivity of oxide sintered body. and can have a high.

The present embodiment in oxide sintered body in the form of, all the metal contained in the oxide sintered body memory devices using the element and a content of tungsten, 0.5 atoms % hereinafter atoms 20% or more can be on. The, oxide sintered body is formed by performing a oxide semiconductor film as an channel layer including TFT in a semiconductor device, use of a low drive voltage in a current OFF ON gate and can have a high.. In addition oxide semiconductor film can be the rate.

The present embodiment in oxide sintered body in the form of, all the metal contained in the oxide sintered body element and memory devices using the, aluminum, titanium, chromium, gallium, hafnium, zirconium, silicon, molybdenum, vanadium, niobium, tantalum and bismuth at least selected from the group consisting of 0.1 atomic % or more and validation term and to satisfy the element selected from group VIII metal elements 1 10 atoms % hereinafter can be on. The, oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, OFF thereof as well as the second current, use of a low drive voltage in a current OFF ON gate and can have a high..

Other embodiment in the form a semiconductor device of the present invention, said embodiment used as a target oxide sintered body in the form of the oxide semiconductor film by forming a sputtering method including. semiconductor device. The present embodiment in the form of a semiconductor device, used as a target oxide sintered body in the form of said embodiment the oxide semiconductor film by forming a sputtering method, because it includes the high.

<Inhibit the growth of hematopoietic stem cell form of the present invention embodiment >

[Embodiment form 1: oxide sintered body]

Oxide sintered body in the form of the present invention which embodiment, indium and, as tungsten, zinc and tin; and a polyurethane composition oxide sintered including at least one of, as crystalline, as tungsten, zinc and tin at least one of double crystal phase including.. The present embodiment in the form of oxide sintered body, crystalline as including at least one of tungsten and zinc and tin, because it includes the double oxide crystal phase, oxide sintered body is formed by performing a oxide semiconductor film including a semiconductor device as an channel layer in TFT (thin film transistor), OFF thereof as well as the second current, use of a low drive voltage in a current OFF ON gate and can have a high.. In addition thermal conductivity of oxide sintered body. and can have a high.

(In and, W and a, containing at least one of Zn and Sn)

The present embodiment in the form of oxide sintered body, by using the same formed oxide semiconductor film including a semiconductor device as an channel layer in TFT (thin film transistor), disease and current OFF thereof, use of a low drive voltage in a current OFF prevent oscillation due to a feedback high gate ON, high thermal conductivity of oxide sintered body in terms advantageously applied, and In (indium), W (tungsten) and, Sn and Zn (zinc) comprise at least one of a (tin), is separated from an In preferably. Wherein, acids to epoxygenated fatty acids therein main, the present embodiment of the sintered material oxide in the form of metal contained in the decomposition element and Si (silicon) to 50 atoms % In content of circulation promoted. or more.

(Double oxide crystalline)

The present embodiment in the form of oxide sintered body, by using the same formed oxide semiconductor film including a semiconductor device as an channel layer in TFT (thin film transistor), disease and current OFF thereof, use of a low drive voltage in a current OFF prevent oscillation due to a feedback high gate ON, high thermal conductivity of oxide sintered body in terms advantageously applied, and a W as crystalline, including at least one of Zn and Sn a double crystal phase.

Double crystal phase, same oxide sintered body including oxide semiconductor film is formed by performing a a semiconductor device including as an channel layer in TFT (thin film transistor), disease and current OFF thereof, use of a low drive voltage in a current OFF prevent oscillation due to a feedback high gate ON, high thermal conductivity of oxide sintered body in terms advantageously applied, ZnWO₄ type phase, Zn₂ W₃ O₈ type phase, WSnO₄ type phase, WSn₂ O₅ type phase and WSn₃ O₆ type phase 1 at least selected from the group consisting of including it is preferred that a species of crystal phase. X ray diffraction measuring such double crystal phase is identified by.

ZnWO₄ the type phase, ZnWO₄ on, ZnWO₄ In on part of the substrate, Si of elemental metals other than Zn and W at least include a, and their aspects of viral oxygen on Image which is, particularly excess or, ZnWO₄ phase the same. of the mobile communication network generic on of crystal structure. Zn₂ W₃ O₈ the type phase, Zn₂ W₃ O₈ on, Zn₂ W₃ O₈ In on part of the substrate, Si of elemental metals other than Zn and W at least include a, and their aspects of viral oxygen on Image which is, particularly excess or, Zn₂ W₃ O₈ phase the same. of the mobile communication network generic on of crystal structure. WSnO₄ the type phase, WSnO₄ on, WSnO₄ In on part of the substrate, Si of elemental metals other than Sn and W at least include a, and their aspects of viral oxygen on Image which is, particularly excess or, WSnO₄ phase the same. of the mobile communication network generic on of crystal structure. WSn₂ O₅ the type phase, WSn₂ O₅ on, WSn₂ O₅ In on part of the substrate, Si of elemental metals other than Sn and W at least include a, and their aspects of viral oxygen on Image which is, particularly excess or, WSn₂ O₅ phase the same. of the mobile communication network generic on of crystal structure. WSn₃ O₆ the type phase, WSn₃ O₆ on, WSn₃ O₆ In on part of the substrate, Si of elemental metals other than Sn and W at least include a, and their aspects of viral oxygen on Image which is, particularly excess or, WSn₃ O₆ phase the same. of the mobile communication network generic on of crystal structure. These double crystal phase one plurality implement preferably implement.

Wherein, ZnWO₄ phase, space group P12/c1 (13) has crystal structure represented by, JCPDS card 01-088-0251 tungsten of crystal structure, which is defined in an acid zinc compound is crystalline. Zn₂ W₃ O₈ phase, space group P63mc (186) has crystal structure represented by, C. R. Seances Acad. Sci. (Ser. C), 1970, pp 271-136 disclosure to a tungsten acid zinc compound is crystalline. WSnO₄ 330, space group Pnna (52) has crystal structure represented by, JCPDS card 01-070-1049, which is defined in an acid tungsten of crystal structure is crystalline tin compounds. WSn₂ O₅ phase, space group P121/c1 (14) has crystal structure represented by, Inorg. Chem. , (2007), 46, pp 7005-7011 disclosure to a tungsten acid is crystalline tin compounds. WSn₃ O₆ phase, C12/c1 (15) group space has crystal structure represented by, Inorg. Chem. , (2007), 46, pp 7005-7011 disclosure to a tungsten acid is crystalline tin compounds.

Yet, ZnWO₄ on, Zn₂ W₃ O₈ on, WSnO₄ on, WSn₂ O₅ phase and WSn₃ O₆ on part of the substrate either on these double oxide crystal phase, in addition to picking up configured at least Si of elemental metals, groups, or with an different from the user include, ZnWO₄ on, Zn₂ W₃ O₈ on, WSnO₄ on, WSn₂ O₅ phase and WSn₃ O₆ on part of the substrate either on these double oxide crystal phase configured, in addition to picking up at least one of Si of elemental metals high ( [...] ) crystalline structure, it may be and, e.g., said double oxide crystal phase configured, in addition to picking up at least one of Si of elemental metals, ZnWO₄ on, Zn₂ W₃ O₈ on, WSnO₄ on, WSn₂ O₅ phase and WSn₃ O₆ on either on W sites and/or Zn Sn or site high portion of site may be substituted and, ZnWO₄ on, Zn₂ W₃ O₈ on, WSnO₄ on, WSn₂ O₅ phase and WSn₃ O₆ on between crystal lattice on either preferably as described above may be the accommodation.

(On and a pair of comb-like)

The present embodiment in the form of oxide sintered in stellar, formed by using the same as an channel layer oxide semiconductor film in a semiconductor device including TFT, disease and current OFF thereof, use of a low drive voltage in a current OFF prevent oscillation due to a feedback high gate ON, high thermal conductivity of oxide sintered body in terms advantageously applied, and a pair of comb-like phase crystalline as including in addition it is preferred that a.

Phase and a pair of comb-like, , and a pair of comb In on part of the substrate, and a pair of comb phase and W and at least one other than Si of elemental metals is on is included, the same phase, and a pair of comb of of crystal structure. of the mobile communication network generic. And a pair of comb-like measuring ray diffraction X phase is identified by. Wherein, on, and a pair of comb contains indium oxide (In₂ O₃) is one of the crystalline phase of, JCPDS card 6-0416 is speaking and a crystal structure defined to, rare earth oxide C shape (or C-rare earth structure) called constitution :.. Furthermore, W, and a pair of comb on part of the substrate other than Si of elemental metals In and at least one phase is included, on part of the substrate, and a pair of comb In Si of elemental metals other than W and at least one is preferably even crystal structure.

(Double oxide crystalline occupancy)

The present embodiment in oxide sintered body in the form of, by using the same formed oxide semiconductor film including a semiconductor device as an channel layer in TFT (thin film transistor), disease and current OFF thereof, use of a low drive voltage in a current OFF prevent oscillation due to a feedback high gate ON, high thermal conductivity of oxide sintered body in terms advantageously applied, oxide sintered body in end face of the shank of the of its cross-section tungsten and zinc and tin double oxide including at least one of crystalline area occupancy is a double oxide crystalline the occupancy, is connected to the 50% hereinafter and present 0%, 30% hereinafter is preferably 0.5% or more, more preferably, the 15% hereinafter is 0.5% or more.

Double oxide crystalline occupancy. calculates a as follows. First, energy dispersing a compact fluorescent X ray analysis enclosed herewith, and scanning secondary electron microscope using (SEM-EDX), mirror finishing the reproductivity of the laser diode by oxide sintered body a and by observation under an SEM, EDX analyzed the composition of the respective phases. Crystal structure of the respective phases X ray diffraction θ-2 θ of the measurements identified by the method. X ray diffraction measuring each are identified by the coloring metal element in an amount of. different compositional ratio. Oxide sintered material of a metal element in an amount of between the of the compositional ratio, said EDX a analyzed between an inner of compositions. coincide and of the ratio. E.g., X ray diffraction measurement in, In₂ O₃ phase WSn₂ O₅ phase WSn₃ O₆ on when identified, an analysis by EDX, In₂ O₃ In ratio (e.g. In / (In+W+Sn)) on the a decimator is provided to convert, WSn₂ O₅ phase and WSn₃ O₆ on the, W ratio (e.g. W / (In+W+Sn)) and/or Sn ratio of (e.g. Sn / (In+W+Sn)) is 2000. Each SEM-EDX determined ratio metal sintered powder, having a high percentage region In In₂ O₃ it is judged as a half-on, W rate and/or Sn ratio hole exposing an region WSn₂ O₅ phase and WSn₃ O₆ can be a decision is made that a vehicle on.

(Double oxide crystalline and and a pair of comb-like double on on occupancy)

The present embodiment in the form of double oxide as crystalline, sintered bodies oxide and crystalline when including phase and a pair of comb-like, oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, disease and current OFF thereof, use of a low drive voltage in a current OFF ON and high and the threshold voltage of the gate, its properties and lessening of the diode is, for in the main surface of, high thermal conductivity of oxide sintered body in terms advantageously applied, oxide sintered body in end face of the shank of the of its cross-section and a pair of comb-like double oxide crystalline and double occupancy is area total on the occupancy on, 100% hereinafter are preferably present in the salt 95% or more, preferably 98% or more is 100% hereinafter.

Wherein, oxide sintered body of the occupancy of phase has an area and a pair of comb-like, oxide sintered body of the cross section of the double oxide crystalline area occupancy is a double oxide crystalline since-calculated method such as occupancy, the cross-section and a pair of comb-like double oxide crystalline and total on the occupancy on double occupancy is area, oxide sintered body of the cross section of the double oxide crystalline area occupancy is a double oxide crystalline.-calculated method such as occupancy.

(Tungsten content)

The present embodiment in oxide sintered body in the form of, by using the same formed oxide semiconductor film as an channel layer including TFT in a semiconductor device, use of a low drive voltage in a current OFF prevent oscillation due to a feedback high gate ON, oxide semiconductor film in terms the rate advantageously applied, all the metal contained in the oxide sintered body element and Si and the content of the tungsten to, 0.5 atoms % hereinafter atoms 20% or more are preferably present in the salt, 0.5 atomic % or more is preferably 10 atomic % hereinafter, 7 atomic % or more is more preferably, the % hereinafter 10 atoms.

Wherein, oxide sintered body W in the content of the Si element or of metals, such as ICP (inductively coupled plasma) is measured by mass spectrometry. Tungsten the content, oxide sintered body in total of all the metal element and Si for content or percentage of content of W is.

(Content of Si elemental metals)

The present embodiment in the form of oxide sintered body is formed by performing a as an channel layer oxide semiconductor film in a semiconductor device including TFT, and lower the current OFF thereof, use of a low drive voltage in a current OFF ON gate high in terms advantageously applied, all the metal contained in the oxide sintered body element and Si (silicon) for, Al (aluminum), Ti (titanium), Cr (chromium), Ga (gallium), Hf (hafnium), Zr (zirconium), Si (silicon), Mo (molybdenum), V (vanadium), Nb (niobium), Ta (tantalum) and (bismuth) Bi at least selected from the group consisting of the content element selected from group VIII metal elements 1,0.1 atomic % or more are preferably present in the salt 10 atoms % hereinafter, 0.1 atomic % or more is preferably 5 atomic % hereinafter, 0.1 atoms % hereinafter is more preferably, the 1 atoms % or more.

Wherein, Al, Ti, Cr, Ga, Hf, Si, Nb and V content at least one kind of element 1 when above 0.1 atomic %, the oxide sintered body of an oxide semiconductor obtained by using the current of semiconductor device including a OFF but insert hole, such element content % when the 10 atoms, can adopt high current ON of semiconductor device is connected to the semiconductor layer. tends.

Yet, Zr, Mo, Ta and Bi element selected from group VIII metal elements content at least 1% when above 0.1 atoms, the oxide sintered body of an oxide semiconductor obtained by using the current of semiconductor device including a ON but the cost, such element content when the 10 atomic %, of semiconductor device is connected to the semiconductor layer. tendency tubes is current OFF.

The present embodiment form oxide sintered body according to an oxide is formed using a semiconductor film used as semiconductor layer of semiconductor device since the, it that are required as transparent conductive film electrical resistance than preferably a great degree. Specifically, the present embodiment form oxide sintered body according to an oxide is formed using a semiconductor film, electric resistance rate 1×10^-4 Ωcm is preferably not less or more. To this end, oxide sintered body that can be included in a PAL and the content of the Si, 0.007 to team atoms Si/In preferably smaller than the, yet oxide sintered body that can be included in a PAL and the content of the Ti, 0.004 to team atoms Ti/In preferably smaller than the.

The resistivity of the electric thin film is measured by terminal 4. Mo as electrode material is formed into a film by an sputtering electrode, voltage up to + 40 V in -40 V electrodes and outside and stored and subsequently, the second electrode inner while flowing current measures a voltage the, . signal is fed to the input of electrical resistance.

(Manufacturing method of oxide sintered body)

The present embodiment in the form of oxide sintered body of the first substrate are assembled without limited to tissues in the manufacturing method, in terms that efficiently producing, of preparing and a step mixture of raw material powder, and a process for etching multiple oxygen is calcinated mixture, calcination powder product, molded body includes a step of sintering a.

1. A step of preparing a powder material won

As material powder of oxide sintered body, indium oxide powder (e.g. In₂ O₃ powder), (e.g. WO₃ powder) tungsten oxide powder, zinc oxide powder (e.g. ZnO powder), such as tin oxide powder (e.g. SnO₂ powder), oxide sintered to make up a pile or bristle elemental metals a preparing oxide powder of Si. Furthermore, as tungsten oxide powder WO_2.72 powder, WO_2.0 powder such as indicating, WO₃ compared to powder chemical formulation that deficient oxygen to be raw powder having as, the need for an actuator for the high thermal conductivity preferably than in the. Won a purity of powder material, oxide sintered to Si elemental metals does not flow path from being mixed in and can obtain characteristics in terms that, 99.9 mass % or more walled it is preferred that a.

2. Won a process of preparing mixture primary powder material

First, said raw material powder during, WO_2.72 powder or WO_2.0 powder, ZnO powder, SnO₂ powder by having an oxide powder of raw-material powder in a pulverization a. At this time, oxide sintered body of crystalline as, ZnWO₄ type phase, obtains and makes as raw material powder prevented want WO_2.72 powder or WO_2.0 ZnO powder and at rates of 1:1 molar ratio from 1:4, producing powder, Zn₂ W₃ O₈ type phase, obtains and makes as raw material powder prevented want WO_2.72 powder or WO_2.0 ZnO powder and at rates of 3:2 molar ratio from 1:4, producing powder, WSnO₄ type phase, obtains and makes as raw material powder prevented want WO_2.72 powder or WO_2.0 powder and SnO₂ at rates of 1:1 molar ratio from 1:4, producing powder, WSn₂ O₅ type phase, obtains and makes as raw material powder prevented want WO_2.72 powder or WO_2.0 powder and SnO₂ ratio of 1:2 molar ratio from 1:4, producing powder, WSn₃ O₆ type phase, obtains and makes as raw material powder prevented want WO_2.72 powder or WO_2.0 powder and SnO₂ powder. in a weight ratio of 1:3 molar ratio from 1:4, producing. Won material powder mixing which is no limited to, extracts of Barks of the method, dry and wet of scheme is APS array and, specifically ball mill, planetary ball mill, bead mill using powdered are blended. The raw material powder can cause primary mixture. Wherein, the wet grinding using mixing method for drying the resulting mixture is the, natural drying or high spray dryer method drying such as carbon atoms are preferably can be used.

3. A process for etching multiple primary mixture into a roasting

Furthermore, oxygen is calcinated primary mixture is obtained. Primary mixture but is no limited to, extracts of Barks of the calcination temperature of, size increases by the refrigerant cooling means is too particle diameter of calcined in amount to decrease the sintered bodies are an upper portion of the preferably less than 1200 °C, merchant determined as water calcined ZnWO₄ type phase, Zn₂ W₃ O₈ type phase, WSnO₄ type phase, WSn₂ O₅ type phase and/or WSn₃ O₆ 500 °C in order to obtain the type phase is preferably not less or more. To this end, 500 °C or more preferably less than 1000 °C, 900 °C hereinafter is preferably 550 °C or more. The, merchant determined ZnWO₄ type phase, Zn₂ W₃ O₈ type phase, WSnO₄ type phase, WSn₂ O₅ type phase and/or WSn₃ O₆ type phase such as including calcined. Calcination the atmosphere, atmospheric or oxygen 25 volume % or more suitable application atmosphere is an atmosphere of a mixed oxygen-nitrogen including.

4. Won a process of preparing mixture secondary powder material

Furthermore, produces a calcination obtained, said raw material powder in In₂ O₃ powder, said a pulverization such as a pulverization by method. The, raw material powder can cause secondary mixture.

5. Secondary mixture product

Furthermore, molded with the obtained secondary mixture. Secondary mixture for forming the first substrate are assembled without limited to tissues in the method, in that density is increased to provide sintered, uniaxial pressing method, CIP (cold isostatic processing) method, casting method is preferable.. Thus molded and product can realize high.

6. Molded body to sinter process

Furthermore, the sintering to thus obtainable moulded bodies. Molded body's sintering temperature especially without limited to tissues in the, sintered bodies are (% % of the theoretical density to actual sintered bodies are the percentage of the circulation promoted..) is at least 90% a high thermal conductivity in advantageously applied, are preferably present in the salt 1500 °C hereinafter 1000 °C or more, 1200 °C hereinafter is preferably 1050 °C or more. Yet sintered the atmosphere but is no limited to, extracts of Barks of, oxide sintered body of configuration determination particle diameter of the irradiated light in a position corresponding to at that point and prevent the occurrence of cracks and in light-emitting portion thermal conductivity, atmospheric atmosphere-latency, oxygen atmosphere, nitrogen-oxygen mixture atmosphere is preferable and, preferably in particular atmosphere is an atmosphere of a-latency atmospheric. the present embodiment in the form of may yield an oxide sintered body.

[Embodiment form 2: semiconductor device]

With a 1 also, other embodiment in the form of the present invention semiconductor device (10) the, form a target oxide sintered body of embodiment 1 used as the sputtering method by forming a oxide semiconductor film (14) includes. The present embodiment in the form of a semiconductor device, said embodiment a target oxide sintered body in the form of the used as a formed by sputtering method, because it includes the oxide semiconductor film, the high.

The present embodiment in the form of semiconductor device (10) the, but not particularly limited, e.g., a target oxide sintered body of embodiment form 1 used as the sputtering method by forming a oxide semiconductor film (14) test to that channel as a layer including semiconductor device is a TFT (thin film transistor). The present embodiment in the form of semiconductor device (10) a one example of the TFT, used as a target oxide sintered body in the form of said embodiment the sputtering method by forming a oxide semiconductor film (14), because it includes the test to that channel as, concave is current OFF thereof, use of a low drive voltage in OFF ON gate operates an output of a current is.

The present embodiment in the form of semiconductor device (10) in the TFT, more specifically, 1, such as, as shown in also, substrate (11) and, substrate (11) disposed on gate electrode (12) and, gate electrode (12) the scale and arranged as individually insulating layer on gate insulating layer (13) and, gate insulating layer (13) channel on layer the scale and arranged as individually oxide semiconductor film (14) and, oxide semiconductor film (14) on the so as not to come into contact, and the source electrode (15) and a drain electrode (16) includes.

(Manufacturing method of semiconductor device)

2 also refers to surface, the present embodiment in the form of semiconductor device (10) of the manufacturing method, but is no limited to, extracts of Barks of, efficiently for manufacturing semiconductor device of a characteristic high in terms that, substrate (11) a gate electrode (12) a process for forming the oxide layer (also 2 (A)), gate electrode (12) as insulating layer on gate insulating layer (13) a process for forming the oxide layer (also 2 (B)) and, gate insulating layer (13) channel on as a layer oxide semiconductor film (14) (also 2 (C)) and a step for forming a, oxide semiconductor film (14) on source electrode 88800 00550888 (15) and a drain electrode (16) is disposed in removable contact to each other (also 2 (D)) for including a step for forming a it is preferred that a.

1. The gate electrode is formed on the

2 (A) also refers to surface, substrate (11) a gate electrode (12) is formed on. Substrate (11) the, but is no limited to, extracts of Barks of, transparency, price stability and surface smoothness in advantageously applied a high level, quartz glass substrate, alkali-free glass substrate, alkali preferably, such as a glass substrate. Gate electrode (12) the, but is no limited to, extracts of Barks of, carboxylic group and/or ester group in that low electrical resistance and, Mo electrode, Ti electrode, W electrode, Al electrode, preferably electrode cu. Gate electrode (12) the method for forming, but is no limited to, extracts of Barks of, large area on primary surface of the substrate, can be designed to be kept uniform in that, vacuum deposition method, sputtering, the. is preferable.

2. A process a gate insulating layer is formed

Also refers to surface 2 (B), gate electrode (12) as insulating layer on gate insulating layer (13) is formed on. Gate insulating layer (13) the, but is no limited to, extracts of Barks of, having a high insulation property in that, SiO_x film, SiN_x preferably film or the like film. Gate insulating layer (13) the method for forming, but is no limited to, extracts of Barks of, are formed in the primary surface of the substrate uniform large area on, can be designed to be kept in that while ensuring insulating properties, and a point and that, plasma CVD (chemical vapor deposition) such as preferably.

3. Out to increase the thickness of the oxide semiconductor film

Also refers to surface 2 (C), gate insulating layer (13) channel on as a layer oxide semiconductor film (14) is formed on. Oxide semiconductor film (14) the, an semiconductor device (10) for producing in terms that, form a target oxide sintered body of embodiment 1 used as a formed by the sputtering method. Wherein, sputtering, the rotation, in a film-forming chamber wherein a, and disposed are opposed to each other, and the target and the substrate, and applying a voltage to the target by, its surfaces by sputtering rare gas ions, constituting the target from the target substrate causing the atoms (said gate electrode and gate electrode and the gate insulation substrate with light-blocking film also includes. a) constituting target by deposited on the more rigid the fixture is configured. of the mobile communication network method to form the membrane.

4. A step for forming a source electrode and a drain electrode

2 (D) also refers to surface, oxide semiconductor film (14) on source electrode (15) and a drain electrode (16) form is disposed in removable contact to each other. Source electrode (15) and a drain electrode (16) the, but is no limited to, extracts of Barks of, preferably carboxylic group and/or ester, in addition oxide semiconductor film electrical resistance low in that with low resistance wherein the contact electrical, Mo electrode, Ti electrode, W electrode, Al electrode, preferably electrode cu. Source electrode (15) and a drain electrode (16) the method for forming, but is no limited to, extracts of Barks of, oxide semiconductor film is formed on a primary surface of the substrate uniform large area, can be designed to be kept in that, vacuum deposition method, sputtering, the. is preferable. Source electrode (15) and a drain electrode (16) is disposed in removable contact to each other forming a the method, but is no limited to, extracts of Barks of, oxide semiconductor film is formed on a primary surface of the substrate uniform large area of source and drain electrodes virtue of the method for forming a pattern of, photoresist etching with preferably forming by.

In the embodiment

(In the embodiment 1-in the embodiment 5)

1. Preparation of powder material

Particle size of 0.5 micro m-1.2 micro m pure, which is 99.9 mass % in WO_2.72 powder and, average particle diameter is 1.0 micro m 99.99 mass % in ZnO powder and pure, which, pure, which average particle diameter is 1.0 micro m 99.99 mass % in In₂ O₃ shown powder.

2. Primary powder material won preparation of mixture

First, ball mill to, a raw material powder during, WO_2.72 ZnO powder and powder extended storage and is easily carried, by pulverization time 18 primary raw material powder specifically disclosed is a liquid agent mixture. WO_2.72 ZnO powder and is cleansed with a water-based molar powder WO_2.7: ZnO=1:1 light with the. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Primary raw material powder obtained in drying the atmospheric mixture.

3. Spherical absorbent mixture primary

Furthermore, primary raw material powder mixture obtained, and placed over the crucible electrodeposition resist aluminate, 8 at a temperature of 800 °C atmospheric in he calcination time. The calcination temperature of a crystal phase is formed a temperature if small to said diameters of not powder calcination can be preferably toward the low position in that. The, as crystalline ZnWO₄ including calcined product for type phase can be obtained.

4. Preparation of mixture secondary powder material won

Furthermore, obtained calcined product, a raw material which consist of a powdered In₂ O₃ powder and have a water port together, and placed over the ball mill pulverization time in addition 12 12 secondary raw material powder by pulverization time mixture specifically disclosed is a liquid agent. Produces a calcined In₂ O₃ the mixing ratio powders, WO_2.72 powder and ZnO powder and In₂ O₃ powder molar ratio is table 1 which indicates to in the embodiment 1-in the embodiment 5 of a silicon wafer is non such as. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Obtained was, comprising drying dry spray powder mixture of the root.

5. Secondary mixture for forming

Furthermore, a secondary mixture obtained by the compression tool to molding at a compression pressure, room temperature by further CIP (5 °C -30 °C) integer ( wednesdays ) in to the pressure for 190 MPa, 100 mm diameter, and a thickness about 9 mm in disc-shaped bodies obtained.

6. Sintered of the molded fuel-carrying material

Furthermore, a molded object obtained atmospheric in table 1 which indicates to in the embodiment 1-in the embodiment 5 of 8 to sintering temperature and sintered time, thereby oxide sintered body can be obtained.

7. Detecting amount of oxide sintered body

Obtained oxide sintered crystallization phase, oxide sintered part of as blocks, sample from, powder X-ray crystalline in the diffraction law the identified by analysis. X inner bumps Κα of cu is provided to have phase determined using line. Oxide sintered body crystal phase table've got the to 1.

Obtained oxide sintered body of said end face of the shank and a pair of comb-like and crystalline double oxide in merchant In₂ O₃ type phase was of identifying as follows.

Oxide sintered part of sample from sampled, , method of polishing a surface of a sample to a smoothing to the rear side of the main. Furthermore, using SEM-EDX, and by observation under an SEM surface of a sample, each crystal particles a composition ration of metal element was subject to analysis by EDX. Crystals composition ratio of metal element particles these determinations group are sold at the wavelength over the bar, W and Zn content Zn group and particles permits highly crystalline content content content In very low content W and permits highly crystalline particles can be into time. W and Zn content permits highly crystalline content merchant crystal double group particles ZnWO₄ is type phase, W and Zn content In very low content particles permits highly crystalline content merchant and a pair of comb-like group In₂ O₃ was conclusive act is type phase.

Oxide sintered body of said end face of the shank the of its cross-section in double oxide crystalline area occupancy is a double oxide crystalline occupancy, of calcined body and said end face of the shank in the of its cross-section and a pair of comb-like double oxide crystalline and merchant In₂ O₃ type double occupancy is area total on on occupancy (hereinafter, double oxide crystalline and and a pair of comb-like merchant In₂ O₃ type on. a double on occupancy is him) listed've got the to 1.

Oxide sintered body obtained in the content of the Si of elemental metals ICP it was determined that by mass spectrometry. These content or of the sintered material so as to create oxide based metal contained in the decomposition element and Si calculates a content of W was for. 'Ve got the to 1 table result. Furthermore, table 1 in ' additional elements' the, Al (aluminum), Ti (titanium), Cr (chromium), Ga (gallium), Hf (hafnium), Zr (zirconium), Si (silicon), Mo (molybdenum), V (vanadium), Nb (niobium), Ta (tantalum) and Bi M (bismuth) but with an element selected from mixture by the addition of an initiator, are no element added in in the embodiment 1-in the embodiment 5.

Thermal conductivity of oxide sintered body obtained by it was determined that a laser flash. Oxide sintered body part as blocks, sample from, diameter and in circle plate with a 20 mm × 1 mm thickness. Resists thermal loading and aox2 promoter, microorganism carrying same, a long circular shape, for coating the spray carbon sample surface, sensors with pulsed laser light having to sample surface. 1.06 micro m and a wavelength of laser beam, was 0.4 ms pulse width. In the embodiment 1 when 1 thermal conductivity of each embodiment 1 table thermal conductivity relative the first deoxygenator've got the to.

8. Target for manufacturing

Obtained sintered electroconductive oxide, diameter 3 inch (76.2 mm) and to a target in 5.0 mm thickness is.

9. For manufacturing semiconductor device

(1) for forming gate electrode

2 (A) also refers to surface, first, substrate (11) of 50 mm × 50 mm × 0.6 mm thickness as synthetic quartz glass, the substrate (11) onto by gate electrode (12) are formed at the electrode Mo of 100 nm thickness as.

(2) forming gate insulating film

2 (B) also refers to surface, then gate electrode (12) on the gate insulating layer by plasma CVD (13) of 200 nm thickness as amorphous SiO_x are formed at the film.

(3) oxide matrix type

2 (C) also refers to surface, then, gate insulating layer (13) on, in the embodiment 1-in the embodiment 5 of each oxide sintered body processed by the RF using that target by (AC) magnetron sputtering, thickness 35 nm of oxide semiconductor film (14) are formed at the. Wherein, target diameter of 3 inch (76.2 mm) plane of the sputter face insistence.

Specifically, sputtering device (not shown) for water in the a film-forming a on a substrate holder, said gate electrode (12) and gate insulating layer (13) of the substrate is exposed to the (11) layer with a gate isolating layer without (13) installed, and is exposed to the outside. Said target gate insulating layer (13) opposed to the installed distances of 90 mm. Film forming chambers are 6×10^-5 Pa on the level of vacuum degree, target he sputtering as follows.

First, gate insulating layer (13) and a target placed in shutter between, Ar in a film-forming chamber wherein a (argon) gas and O₂ (oxygen) mixed gases composed of gas have the to a process pressure of 0.5 Pa. Of mixed gas O₂ gas the content was 1% volume. RF of 120 W target causing the extraction of the discharge sputtering power is applied, (pre-sputtering) resetting a target surface for cleaning was performed for 10 minutes.

Furthermore, the same target for sputter 120 W RF power is applied, a film-forming chamber wherein a in a state a proper system for a inlet, by stripping said shutter, gate insulating layer (13) on oxide semiconductor film (14) he film of. Furthermore, for substrate holder, is applied and the bias voltage may specially, was only be is water cooling. At this time, oxide semiconductor film (14) thickness of which has been obtained by encrypting forming time so that 35 nm. The, oxide sintered body processed by the RF using that target (AC) magnetron sputtering by oxide semiconductor film (14) to form a. Oxide semiconductor film (14) the, semiconductor device (10) in TFT (thin film transistor) channel layer in and out by a spring. Each embodiment examples in oxide semiconductor film (14) to 2 table've got the film-forming speed. From table 2, by the refrigerant cooling means is too content of W pressure slowly rises by a film forming speed is lowered due to could see he.

Furthermore, formed oxide semiconductor film (14) by etching portion of, source electrode forming stage pitch (14s), a drain electrode formation stage pitch (14d) and channel part (14c) the front/rear sides of the. Wherein, source electrode forming stage pitch (14s) and a drain electrode formation stage pitch (14d) major surface of size m micro m×100 micro 100, channel length C_L (of Figure 1 (A) refers to surface (B) and also and 2, channel length C_L email widow, a web page or, source electrode (15) and the drain electrode (16) between a channel section of (14c) distance circulation promoted..) is 40 micro m, channel width C_W (of Figure 1 (A) refers to surface (B) and also and 2, channel width C_W rotation, channel portion (14c) circulation promoted. width of.) is. did to m micro 50. At this time, a thin film transistor in which the semiconductor device (TFT) is 75 mm × 75 mm substrate main surface 25 transverse × 3 mm longitudinal interval two to be disposed two 25, also 1 and 2 and controls the d/a is 75 mm × 75 mm substrate main surface 25 transverse × 3 mm longitudinal interval two 25 two arranged in the sections.

Said a oxide semiconductor film (14) a portion of, specifically, volume ratio oxalic acid: water = 1:10 the aqueous solution an etching, gate electrode (12), gate insulating layer (13) and oxide semiconductor film (14) layer is formed to this order (11) for he etching by the film is immersed in a solution the etching. At this time, to passenger in a bus 40 °C in hot aqueous solution etching ' at elevated temperatures.

(4) source electrode and a drain electrode is formed

2 (D) also refers to surface, then, oxide semiconductor film (14) on source electrode (15) and a drain electrode (16) is formed of separated from one another for.

Specifically, oxide semiconductor film (14) and the source electrodes of stage pitch forming (14s) and a drain electrode formation stage pitch (14d) in order to expose only the major surface of, oxide semiconductor film (14) on applying resist (not shown), was exposing and developing the photoresist layer. Oxide semiconductor film (14) and the source electrodes of stage pitch forming (14s) and a drain electrode formation stage pitch (14d) on and each main surface of, by sputtering method, source electrode (15) in thickness 100 nm in Mo electrode and the drain electrode (16) Mo in 100 nm in thickness is formed of separating node. Furthermore, oxide semiconductor film (14) was where the stripping of the resist on the wafer. Such source electrode, drain as electrode Mo electrode, a thin film transistor in which the semiconductor device (TFT) is 75 mm × 75 mm substrate main surface 25 transverse × 3 mm longitudinal interval two to be disposed two 25, one channel parts by source electrode, drain electrode one placed. The, semiconductor device (10) as, oxide semiconductor film (14) test to that channel as a layer having been produced with at TFT.

Furthermore, device obtained with (10) in TFT 1 300 °C nitrogen atmosphere in the heat treatment time.

10. Characterization of semiconductor device

TFT characteristics of a semiconductor device was assessed as follows. First, gate electrode, source electrode and a drain electrode was measuring contact needle. 7 V between the source electrode and the drain electrode voltage between source-drain of V_ds is applied, source electrodes applied to between-gate source voltage V_gs of change, 15 V in -10 V, current between source-drain when I_ds long since determined the. Source-gate, and between voltage V_gs one -5 V is the source-drain between current I_ds the and defined as current OFF a. In examples each embodiment 2 table a value of an electric current to OFF've got the to. Source-gate, and between voltage V_gs one 15 V is the source-drain between current I_ds as current ON a of the via opening and defines a, OFF ON for a value of an electric current to a value of an electric current to've got the to 2 ratio of the table.

Furthermore, 75 mm × 75 mm substrate main surface 25 25 transverse × 3 mm longitudinal interval two dog the semiconductor device is disposed a current between source-drain respect to all TFT I_ds is 1×10^-5 A one the source-gate between voltage V_gs and acquires the result as the, source-gate, and between voltage V_gs variation of Δ V_gs on the table've got the to 2. Wherein, variation Δ V_gs if the energy is less than the is, main within a field of view is a semiconductor device to be less variation of TFT characteristics..

(In the embodiment 6-in the embodiment 8)

1. Preparation of powder material

Particle size of 0.5 micro m-1.2 micro m pure, which is 99.9 mass % in WO_2.72 in the method for transforming a heat powder, particle size of 0.5 micro m-1.2 micro m pure, which is 99.9 mass % in WO_2.0 the region other than the prepared powder, such as when manner in the embodiment 1-in the embodiment 5 of, WO_2.0 powder, ZnO powder and In₂ O₃ shown powder.

2. Primary powder material won preparation of mixture

First, ball mill to, a raw material powder during, WO_2.0 ZnO powder and powder extended storage and is easily carried, by pulverization time 18 primary raw material powder specifically disclosed is a liquid agent mixture. WO_2.0 ZnO powder and is cleansed with a water-based molar powder WO_2.0: ZnO=3:2 light with the. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Primary raw material powder obtained in drying the atmospheric mixture.

3. Spherical absorbent mixture primary

Furthermore, primary raw material powder mixture obtained, and placed over the crucible electrodeposition resist aluminate, 5 at a temperature of 950 °C atmospheric in he calcination time. The calcination temperature of a crystal phase is formed a temperature if small to said diameters of not powder calcination can be preferably toward the low position in that. The, as crystalline Zn₂ W₃ O₈ including calcined product for type phase can be obtained.

4. Preparation of mixture secondary powder material won

Furthermore, obtained calcined product, a raw material which consist of a powdered In₂ O₃ powder and have a water port together, and placed over the ball mill pulverization time in addition 12, raw material powder by pulverization time 12 secondary mixture specifically disclosed is a liquid agent. Produces a calcined In₂ O₃ the ratio for mixing powders, WO_2.0 powder and ZnO powder and In₂ O₃ powder molar ratio is table 1 which indicates to non such as in the embodiment 6-in the embodiment 8 of a silicon wafer is. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Obtained was, comprising drying dry spray powder mixture of the root.

5. Secondary mixture for forming

Furthermore, secondary obtained in the embodiment 1-in the embodiment 5 except using mixtures with such as when type a diameter of 100 mm, and a thickness about 9 mm in disc-shaped bodies obtained.

6. Sintered of the molded fuel-carrying material

Furthermore, a molded object obtained of atmospheric in table 1 which indicates to 8 in the embodiment 6-in the embodiment 8 in sintering temperature and sintered time, thereby oxide sintered body can be obtained.

7. Detecting amount of oxide sintered body

Powder X-ray crystalline in the diffraction law was assessed by by analysis. X inner bumps cu Κα of the identifying phase determined using line, and a pair of comb-like merchant In₂ O₃ type phase double crystal merchant Zn₂ W₃ O₈ type on identified. Furthermore, using a divided group SEM-EDX Zn content group particles permits highly crystalline content W and double crystal merchant Zn₂ W₃ O₈conclusive act the region other than the is type phase, such as when manner of in the embodiment 1-in the embodiment 5, for calculating occupancy double oxide crystalline, double oxide crystalline and and a pair of comb-like merchant In₂ O₃ for calculating occupancy on double on type, W for calculating content was is calculated thermal conductivity and relative. 'Ve got the to 1 table result. Furthermore, in the embodiment 6-in the embodiment 8 in a additional elements are no.

8. Target for manufacturing

Obtained sintered electroconductive oxide, in the embodiment 1-in the embodiment 5, such as in the case of, diameter 3 inch (76.2 mm) and to a target in 5.0 mm, and a thickness.

9. For manufacturing semiconductor device

In the embodiment 1-in the embodiment 5 of a semiconductor device manner such as when TFT was produced. Each embodiment examples in oxide semiconductor film (14) to 2 table've got the film-forming speed.

10. Characterization of semiconductor device

In the embodiment 1-in the embodiment 5 of such as when manner, characteristics of TFT as a semiconductor device, source-gate, and between voltage V_gs one -5 V is the source-drain between current I_ds OFF a value of an electric current to a, OFF thereof between a value of an electric current to the source-gate voltage V_gs one 15 V is the source-drain between current I_ds ON non a value of an electric current to a, source-gate, and between voltage V_gs variation of Δ V_gs it was determined that for. 'Ve got the to 2 table result.

(In the embodiment 9-in the embodiment 13)

1. Preparation of powder material

Pure, which average particle diameter is 1.0 micro m in the method for transforming a heat powder 99.99 mass % in ZnO, pure, which average particle diameter is 1.0 micro m 99.99 mass % in SnO₂ the region other than the prepared powder, such as when manner in the embodiment 1-in the embodiment 5 of, WO_2.72 powder, SnO₂ powder and In₂ O₃ shown powder.

2. Primary powder material won preparation of mixture

First, ball mill to, a raw material powder during, WO_2.72 powder and SnO₂ powder extended storage and is easily carried, by pulverization time 18 primary raw material powder specifically disclosed is a liquid agent mixture. WO_2.72 powder and SnO₂ is cleansed with a water-based molar powder WO_2.72: SnO₂ = 1:1 light with the. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Primary raw material powder obtained in drying the atmospheric mixture.

3. Spherical absorbent mixture primary

Furthermore, primary raw material powder obtained and placed over the crucible electrodeposition resist aluminate mixture, at a temperature of 650 °C atmospheric in he calcination time 5. The calcination temperature of a crystal phase is formed a temperature if small to said diameters of not powder calcination can be preferably toward the low position in that. The, as crystalline WSnO₄ including calcined product for type phase can be obtained.

4. Preparation of mixture secondary powder material won

Furthermore, obtained calcined product, a raw material which consist of a powdered In₂ O₃ powder and have a water port together, and placed over the ball mill pulverization time in addition 12, raw material powder by pulverization time 12 secondary mixture specifically disclosed is a liquid agent. Produces a calcined In₂ O₃ the ratio for mixing powders, WO_2.72 powder and SnO₂ powder and In₂ O₃ powder molar ratio of in the embodiment 9-in the embodiment 13 1 table is displayed in a liquid such as a silicon wafer is non. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Obtained was, comprising drying dry spray powder mixture of the root.

5. Secondary mixture for forming

Furthermore, secondary obtained in the embodiment 1-in the embodiment 5 except using mixtures with such as when manner of, 100 mm diameter, and a thickness about 9 mm in disc-shaped bodies obtained.

6. Sintered of the molded fuel-carrying material

Furthermore, a molded object obtained of atmospheric in table 1 in the embodiment 9-in the embodiment 13, as shown in 8 in sintering temperature and sintered time, thereby oxide sintered body can be obtained.

7. Detecting amount of oxide sintered body

Powder X-ray crystalline in the diffraction law was assessed by by analysis. X inner bumps cu Κα of the identifying phase determined using line, and a pair of comb-like merchant In₂ O₃ type phase double crystal merchant WSnO₄ type on identified. Furthermore, using SEM-EDX, Sn content and W Sn group and particles permits highly crystalline content content content In very low content W and permits highly crystalline particles divided into group, Sn content and W content merchant crystal double group permits highly crystalline particles WSnO₄ type is, Sn content In very low content W and permits highly crystalline content merchant and a pair of comb-like group of particles In₂ O₃conclusive act the region other than the is type phase, such as when manner of in the embodiment 1-in the embodiment 5, for calculating occupancy double oxide crystalline, double oxide crystalline and and a pair of comb-like merchant In₂ O₃ for calculating occupancy on double on type, W for calculating content was is calculated thermal conductivity and relative. 'Ve got the to 1 table result. Furthermore, in the embodiment 9-in the embodiment 13 in a additional elements are no.

8. Target for manufacturing

Obtained sintered electroconductive oxide, in the embodiment 1-in the embodiment 5, such as in the case of, diameter 3 inch (76.2 mm) and to a target in 5.0 mm, and a thickness.

9. For manufacturing semiconductor device

In the embodiment 1-in the embodiment 5 of a semiconductor device manner such as when TFT was produced. Each embodiment examples in oxide semiconductor film (14) to 2 table've got the film-forming speed.

10. Characterization of semiconductor device

In the embodiment 1-in the embodiment 5 of such as when manner, characteristics of TFT as a semiconductor device, source-gate, and between voltage V_gs one -5 V is the source-drain between current I_ds OFF a value of an electric current to a, OFF thereof between a value of an electric current to the source-gate voltage V_gs one 15 V is the source-drain between current I_ds ON non a value of an electric current to a, source-gate, and between voltage V_gs variation of Δ V_gs it was determined that for. 'Ve got the to 2 table result.

(In the embodiment 14-in the embodiment 16)

1. Preparation of powder material

In the embodiment 9-in the embodiment 13 is required when the application, WO_2.72 powder, SnO₂ powder and In₂ O₃ shown powder.

2. Primary powder material won preparation of mixture

First, ball mill to, a raw material powder during, WO_2.72 powder and SnO₂ powder extended storage and is easily carried, by pulverization time 18 primary raw material powder specifically disclosed is a liquid agent mixture. WO_2.72 powder and SnO₂ is cleansed with a water-based molar powder WO_2.72: SnO₂ = 1:2 light with the. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Primary raw material powder obtained in drying the atmospheric mixture.

3. Spherical absorbent mixture primary

Furthermore, primary raw material powder obtained and placed over the crucible electrodeposition resist aluminate mixture, at a temperature of 800 °C atmospheric in he calcination time 5. The calcination temperature of a crystal phase is formed a temperature if small to said diameters of not powder calcination can be preferably toward the low position in that. The, as crystalline WSn₂ O₅ including calcined product for type phase can be obtained.

4. Preparation of mixture secondary powder material won

Furthermore, obtained calcined product, a raw material which consist of a powdered In₂ O₃ powder and have a water port together, and placed over the ball mill pulverization time in addition 12, raw material powder by pulverization time 12 secondary mixture specifically disclosed is a liquid agent. Produces a calcined In₂ O₃ the ratio for mixing powders, WO_2.72 powder and SnO₂ powder and In₂ O₃ powder molar ratio is table 1 which indicates to such as and in the embodiment 14-in the embodiment 16 of a silicon wafer is. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Obtained was, comprising drying dry spray powder mixture of the root.

5. Secondary mixture for forming

Furthermore, secondary obtained in the embodiment 1-in the embodiment 5 except using mixtures with such as when manner of, 100 mm diameter, and a thickness about 9 mm in disc-shaped bodies obtained.

6. Sintered of the molded fuel-carrying material

Furthermore, a molded object obtained atmospheric in table 1 which indicates to in the embodiment 14-in the embodiment 16 of 8 in sintering temperature and sintered time, thereby oxide sintered body can be obtained.

7. Detecting amount of oxide sintered body

Powder X-ray crystalline in the diffraction law was assessed by by analysis. X inner bumps cu Κα of identifying and phase determined using line, and a pair of comb-like merchant In₂ O₃ type phase double crystal merchant WSn₂ O₅ type on identified. Furthermore, using a divided group SEM-EDX Sn content group particles permits highly crystalline content W and double crystal merchant WSn₂ O₅conclusive act the region other than the is type phase, such as when manner of in the embodiment 9-in the embodiment 13, double oxide crystalline occupancy for calculating, merchant and a pair of comb-like and double oxide crystalline In₂ O₃ for calculating occupancy on double on type, W for calculating content was is calculated thermal conductivity and relative. 'Ve got the to 1 table result. Furthermore, in the embodiment 14-in the embodiment 16 in a additional elements are no.

8. Target for manufacturing

Obtained sintered electroconductive oxide, in the embodiment 1-in the embodiment 5, such as in the case of, diameter 3 inch (76.2 mm) and to a target in 5.0 mm, and a thickness.

9. For manufacturing semiconductor device

In the embodiment 1-in the embodiment 5 of a semiconductor device manner such as when constructed with a TFT. Each embodiment examples in oxide semiconductor film (14) to 2 table've got the film-forming speed.

10. Characterization of semiconductor device

In the embodiment 1-in the embodiment 5 of such as when manner, characteristics of TFT as a semiconductor device, source-gate, and between voltage V_gs one -5 V is the source-drain between current I_ds OFF a value of an electric current to a, OFF thereof between a value of an electric current to the source-gate voltage V_gs one 15 V is the source-drain between current I_ds ON non a value of an electric current to a, source-gate, and between voltage V_gs variation of Δ V_gs it was determined that for. 'Ve got the to 2 table result.

(In the embodiment 17-in the embodiment 19)

1. Preparation of powder material

Particle size of 0.5 micro m-1.2 micro m pure, which is 99.9 mass % in WO_2.72 in the method for transforming a heat powder, particle size of 0.5 micro m-1.2 micro m pure, which is 99.9 mass % in WO_2.0 the region other than the prepared powder, such as when manner in the embodiment 9-in the embodiment 13 of, WO_2.0 powder, SnO₂ powder and In₂ O₃ shown powder.

2. Primary powder material won preparation of mixture

First, ball mill to, a raw material powder during, WO_2.0 powder and SnO₂ powder extended storage and is easily carried, by pulverization time 18 primary raw material powder specifically disclosed is a liquid agent mixture. WO_2.0 powder and SnO₂ is cleansed with a water-based molar powder WO_2.0: SnO₂ = 1:3 light with the. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Primary raw material powder obtained in drying the atmospheric mixture.

3. Spherical absorbent mixture primary

Furthermore, primary raw material powder mixture obtained, and placed over the crucible electrodeposition resist aluminate, 5 at a temperature of 950 °C atmospheric in he calcination time. The calcination temperature of a crystal phase is formed a temperature if small to said diameters of not powder calcination can be preferably toward the low position in that. The, as crystalline WSn₃ O₆ including calcined product for type phase can be obtained.

4. Preparation of mixture secondary powder material won

Furthermore, obtained calcined product, a raw material which consist of a powdered In₂ O₃ powder and have a water port together, and placed over the ball mill pulverization time in addition 12, raw material powder by pulverization time 12 secondary mixture specifically disclosed is a liquid agent. Produces a calcined In₂ O₃ the ratio for mixing powders, WO_2.0 powder and SnO₂ powder and In₂ O₃ powder molar ratio is table 1 which indicates to in the embodiment 17-in the embodiment 19 of a silicon wafer is non such as. Crushing said mixing in the ground terminal of ethanol as dispersion medium. Obtained was, comprising drying dry spray powder mixture of the root.

5. Secondary mixture for forming

Furthermore, secondary obtained in the embodiment 1-in the embodiment 5 except using mixtures with such as when manner of, 100 mm diameter, and a thickness about 9 mm in disc-shaped bodies obtained.

6. Sintered of the molded fuel-carrying material

Furthermore, a molded object obtained atmospheric in table 1 in the embodiment 17-in the embodiment 19 of which indicates to 8 in sintering temperature and sintered time, thereby oxide sintered body can be obtained.

7. Detecting amount of oxide sintered body

Powder X-ray crystalline in the diffraction law was assessed by by analysis. X inner bumps cu Κα of the identifying phase determined using line, and a pair of comb-like merchant In₂ O₃ type phase double crystal merchant WSn₃ O₆ type on identified. Furthermore, using a divided group SEM-EDX Sn content group particles permits highly crystalline content W and double crystal merchant WSn₃ O₆ type phase conclusive act in the region other than the, such as when manner of in the embodiment 9-in the embodiment 13, double oxide crystalline occupancy for calculating, merchant and a pair of comb-like and double oxide crystalline In₂ O₃ for calculating occupancy on double on type, W for calculating content was is calculated thermal conductivity and relative. 'Ve got the to 1 table result. Furthermore, in the embodiment 17-in the embodiment 19 in a additional elements are no.

8. Target for manufacturing

Obtained sintered electroconductive oxide, in the embodiment 1-in the embodiment 5, such as in the case of, diameter 3 inch (76.2 mm) and to a target in 5.0 mm, and a thickness.

9. For manufacturing semiconductor device

In the embodiment 1-in the embodiment 5 of a semiconductor device manner such as when constructed with a TFT. Each embodiment examples in oxide semiconductor film (14) to 2 table've got the film-forming speed.

10. Characterization of semiconductor device

In the embodiment 1-in the embodiment 5 of such as when manner, characteristics of TFT as a semiconductor device, source-gate, and between voltage V_gs one -5 V is the source-drain between current I_ds OFF a value of an electric current to a, OFF thereof between a value of an electric current to the source-gate voltage V_gs one 15 V is the source-drain between current I_ds ON non a value of an electric current to a, source-gate, and between voltage V_gs variation of Δ V_gs it was determined that for. 'Ve got the to 2 table result.

(In the embodiment 20-in the embodiment 36)

In preparing the mixture to secondary powder material won, as raw material powder, and calcined In₂ O₃ in addition to powder, table 3, such as in the embodiment 20-in the embodiment 36 of which indicates to, addition elements, including oxide powder (Al₂ O₃, TiO₂, Cr₂ O₃, Ga₂ O₃, HfO₂, SiO₂, V₂ O₅, Nb₂ O₃, ZrO₂, MoO₂, Ta₂ O₃, Bi₂ O₃) is added is except, such as when manner in the embodiment 1-in the embodiment 19 of, oxide sintered body constructed with a. Addition elements, adjusted depending on intensity molar oxide powder including have been shown to table 3. A target oxide sintered body obtained by working a, such targets RF magnetron sputtering method using oxide semiconductor film formed by a semiconductor device including TFT was produced.

Physical properties of oxide sintered body obtained which organizes to 3 table, a device obtained with've got the to 4 table characteristics of TFT. Copolymer and uni-, di-or more test and it is a sameness the method in the embodiment 1-in the embodiment 19.

(Compared e.g. compared e.g. 1-2)

Oxide sintered resist composition and upon, performed after-mixed powder raw material, by the robot controller and calcination, shaping mixture of raw material powder by adding activated carbon and except, in the embodiment 1-in the embodiment 8 or in the embodiment 9-in the embodiment 19 of oxide sintered body manner such as when printed onto the product, thus resulting target machining, such targets RF magnetron sputtering method using oxide semiconductor film formed by a semiconductor device including TFT constructed with a. Without a calcined raw material powder by sintered shaping mixture of, double crystal on it is found out that the non-viscous coating layer is not. Compared e.g. between 1-2 e.g. compared, WO_2.72 an oxygen-WO_2.0 powder, an oxygen-ZnO SnO₂ powder, and In₂ O₃ powder molar mixing ratio. different. Table 3 physical properties of oxide sintered body which organizes to, TFT characteristics of a semiconductor device 4 table've got the to. Copolymer and uni-, di-or more test. consistent embodiment the method.

Table 1-table 4 refers to surface, indium and, as tungsten, zinc and tin comprise at least one of a, as tungsten, as crystalline, including zinc and tin at least one of double oxide crystal phase including oxide sintered body is formed by performing a oxide semiconductor film as an channel layer a semiconductor device including the TFT (thin film transistor), the same current OFF 1×10^-11 A drop below and, use of a low drive voltage in a current OFF ON gate 8 digits (8, groups, or with an interfacing regenerator, 1×10⁸ or more 1×10⁹. less than. Hereinafter equal to) was and can have a high to. Thermal conductivity of oxide sintered also can be a portion of. Furthermore, table 2 and table 4 ON OFF in a current email widow, a web page or of gate operates an output of, , groups, or with an interfacing regenerator 9 1×10⁹ or more 1×10¹⁰ means less than, 5, groups, or with an interfacing regenerator 1×10⁵ or more 1×10⁶. less than.

New mail is disclosure a embodiment shape and embodiment is exemplified in point all relate limited to, should segments in the sequence of the reference is used. Said range of the present invention rather than the description are represented by range claimed, range semantic and uniform range and claimed for all of the changes is intended includes from.