DONOR SUBSTRATE TO TRANSFER SENSOR LAYER AND SENSOR LAYER FORMATION METHOD USING SAME
The present invention refers to ZnO sensor sensing layer transferring donor substrate and said sacrificial layer including donor acceptor substrate using the substrate sensor sensing layer to method are disclosed. Recent studies IoT suitable to perform various smart gas sensor headset and progressing to which the gas sensor sensitivity, and outputs, magnetic, etc. originally keyboard using internal troubles frost is further increased. In addition, various sensitive material (polymer, metal oxide, yes pin, 2D materials) based gas sensor chip integrated CMOS are expected viscosity for matchings of originally and hybrid sensor. As well as future market wearable sensor application widely move order number which makes a free design process for preparing flexible sensors secured inside of the pipe. Small number of metal oxide-based gas sensor for sensing material paste number processes are generally high pressure liquid coolant or gas-sensing electrode formed on the silicon wafer substrate alumina substrate it screen printing or dispensing method applying through are disclosed. In addition solution of low viscosity using a spin coating method etc. also applied part Lift a-off process. In a subsequent step in a method such organic binder component particles that are present in the sensing material between networking service 450 degrees or greater minimum so as to make a thermal decomposition it harms, environment to 10sup16. The sensing electrodes according to a laminated structure of a MEMS thermal diffusion of components and formed in the case of deep-seated, formed for conduction preventive membrane thin film from being damaged by a thermal stress by an airway as follows. In addition wire wiring metal pad material for high-temperature environment when exposed, due to metallic pads detaching door number occurs each surface airway as follows. Thereby the gate and thermal stress element is subjected imd deteriorates occurs. CMOS integrated sensor temperature heat treatment process for forming a sense layer also is equal to number of an exposed door operable to direct the aforementioned. It is required that a secure service are not necessarily required performance sensing layer 450 degrees or greater but integrated order number in order to ensure oxidation heat treatment temperature sensor element in the presence of discharged extracted free about dilemma. On the other hand gas activates the sensors for the heat treatment method using a heater in the sprayed sensing membrane in a non-suit but also heat treatment temperature is equal to about number also outputs. The, metal oxide material when low temperature sensing layer based on long-term stability method are not necessarily the spirit. The shortcomings of the edge surface of said number can be a stand-alone electric power, productivity is formed in the standby the room gulp disclosed. The purpose of the invention the sacrificial layer including ZnO donor acceptor substrate using the substrate and said donor substrate for sensitive layer sensor sensor sensing layer a number under public affairs method are disclosed. In order to achieve said purposes, one in the embodiment according to sensor of the present invention located on a ZnO substrate sensitive layer donor substrate for material sacrificial layer; and said ZnO sensor on the sensing layer comprises a sacrificial layer. Said ZnO nanorods sacrificial layer may be in the form disclosed. Said ZnO sacrificial layer is 0. 5 to 5 be a thickness. The base is employed as said sensor sensing can be. Said sensor sensing layer tin oxide (SnO2), tungsten oxide (WO3), indium oxide (In2O 3), nickel oxide (NiOx) nanoparticles can be selected from the group consisting of 1 or more. Said nanoparticles Pd, Ni, Pt, Rh, Cu, Ru 1 consisting of a metal catalyst selected from the group consisting of doped may be disclosed. Said be a material substrate are transparent. In order to achieve said purposes, the method of the present invention another sensor sensing layer (i) described in the embodiment according to an acceptor substrate said donor substrate for the steps of providing a sensor-sensitive layer; (ii) number 2 material positioned on the substrate including the steps of providing an adhesive layer on said acceptor sensing and sensing electrodes; said sensor sensing said acceptor substrate layer (iii) donor substrate placing face-to-face adhesive layer; said sensor sensing said layer (iv) transferring the adhesive layer; and (v) number said ZnO industry sacrificial layer comprising the following steps. Said step (iv) is 0. 5 to 2. 5 kg/cm2 Pressure, temperature and 50 to 250 also can be made. Said step (v) is made using etching process can be a polar aprotic solvent. Said acid solution comprises hydrochloric acid can be acetic acid or acetic acid solution. Said adhesive layer (Ag Epoxy Paste) silver paste, anisotropic conductive paste (Anisotropic Conductive Paste) or mixtures thereof can be. A sense layer of said corresponding said sensor and acceptor donor substrate of sensing electrodes and adhesive layer can be patterned to each other. 2 or more sensors sensing different identical to or different from said method can be formed between the. Hereinafter, the present invention more detailed as follows. In one embodiment, the present invention refers to ZnO material substrate located on the sacrificial layer; and said ZnO sensor on the sensing layer including sensor sensing layer transferring donor substrate sacrificial layer number under public affairs substrate. A gas sensor is used for detecting an erroneous sensor sensing layer same as the suitable material are formed on the substrate on which requires electrode measures should form. In the present invention finally sensing electrodes for forming method using the substrate acceptor and donor substrate as sensing layer on substrate system 2 using the same bar these and the basic substrate is a substrate for discrimination basic substrate is a substrate material substrate mention the broadcast receiver. In addition, donor substrate material substrate acceptor substrate material for a substrate for discrimination, acceptor substrate material substrate is number 2 material substrate mention the broadcast receiver. In the present invention ZnO materials used in the substrate is capable of forming a sacrificial layer on the substrate can be used without number then a. In a particular embodiment, said rigid material substrate made of a soft synthetic resin substrate or substrate may be, modified hard material, silicon, sapphire or glass (quartz) may be such as a substrate, a soft synthetic resin include PDMS (Polydimethylsiloxane) substrate, PET (Polyethylene Teraphthalate) substrate, PC (Polycarbonate) substrate, PES (Polyether Sulfone) substrate, PI (Polyimide) substrate, poly roh [lu step [neyn (Polynorbonene) substrate or PEN (Polyethylene Naphthalate) such as a substrate is cited. In a particular embodiment, said material substrate which may be are transparent, this bar pattern may be employed as the donor substrate and acceptor substrate is the after alcoholic beverage it will do, these donor and acceptor substrate is transparent in order to ALIGN behavioural performs because donor substrate are disclosed. Using the alignment key (align key) introduced transparent base substrate formed on the substrate. Thus, in a particular embodiment, said material substrate is preferably a glass or transparent be a sapphire substrate. Forming a sacrificial layer ZnO substrate material of the present invention for preparing donor substrate while accomplishing. It is cannot be said number one method for forming sacrificial layer, in a particular embodiment, this manufacturing method to form the ZnO precursor sol - ZnO seed material substrate on other end growing ZnO nanostructures in heat-solvent phase be a synthetic MethodsIn crystallized. Specifically, said sequence-structure said ZnO ZnO nanostructures formed from sesame seeds growing crystals from step the seed material is immersed in said ZnO substrate sequence synthesis solution can be made. By hydrothermal synthesis solution said water, said source and said supplying zinc ions react with water zinc ions react with water supplies hydroxide can be hydroxide ion source. Said zinc an ion source is acetic acid zinc (Zinc acetate: Zn (O2 CCH3 )2 ), Zinc nitrate (Zinc nitrate: Zn (NO3 )2 ), Zinc sulfate (Zinc sulfate: ZnSO4 ) And zinc chloride (Zinc Chloride: ZnCl2 ) But not the limited to either. Said hydroxide an ion source is hexamethylene tetraamine amine (hexamethytetramine) handler, limited to are not correct. Said sequence synthesizing the atmospheric pressure, in a temperature range of 50 °C to 100 °C, 1 hr to 2 can be performed during time. On the other hand, said heat the synthesis solution, ZnO particles to prevent overgrowth billion number number too overgrowth over and over again, such as polyethylene imine (polyethyleneimine; PEI) cationic polymer containing an amine group such as can be. In a particular embodiment, said ZnO nanostructures grown such as in the form of a nano-rod may be, thus as a result said ZnO nanorods sacrificial layer may be in the form disclosed. In a particular embodiment, said ZnO nanorods crystal height, i.e. ZnO sacrificial layer has a thickness 0. 5 to 5 can be properly controlled to, preferably less than about 0. 8 to 2. 5, more 1 to 1. Wednesday 5 nanometer range. Effective when too short height can be difficult when sacrificial layer serves too long, can be filled with a stripe disadvantages since paper in growing crystals are disclosed. In one embodiment of the present invention according to said sensor sensing layer transferring donor substrate under public affairs performs number, such as said ZnO nano-rod on a substrate formed, integrated sensor array of sensing electrodes formed on the same area and pattern corresponding sensing layer sensing material paste is applied through screen printing or dispensing, 450 to 700 °C through heat-treatment in complete form the sense layer. According to the present invention, finally sensing layer formed on the substrate acceptor however, after forming a donor substrate acceptor substrate and substrate system by a process using 2, sensing layer formed on fully cured state transferred donor substrate to an acceptor substrate to be coated. Thus, according to the present invention the sensing material and to obtain desired properties (e.g., 450 °C or more) high temperature thermal annealing process although not necessarily the integrated sensor array is formed only on the acceptor substrate the substrate sensor close separate donor substrate, acceptor substrate is not exposed to high temperature environment desired sensing layer in relation to WIPO. In a particular embodiment, the base is employed as the donor substrate on said sensor sensing can be. Said ZnO nanostructures, such as nanoparticles rod is formed by patterning said ZnO seed is formed from seeds grown ZnO and vertically nano-rod arranged according to growth surface, a sensor having a sensing layer can be obtain the desired pattern. Sensor sensing layer on said donor substrate such as patterning, as acceptor substrate in a pattern corresponding sensing electrodes of said sensor sensitive the after alcoholic beverage it will do aromatic rings, thereby aligning the sensing layer introduced between the desired pattern transfer onto a sensor having a sensing layer sensing electrodes by finally array integrated in the acceptor substrate is equal to or higher. The first and second substrates for alignment for the donor is formed on the transparent substrate having a hereinafter described above be preferable. In the present invention number as the sacrificial layer including ZnO under public affairs donor substrate may be various [thu and inorganic metal oxide or oil/detection sensing material can be used in paste, wafer scale advantage can be used. I.e., using the present invention according to donor substrate to allow the possible transfer of the large in-situ, one donor substrate transfer layer may be on one or more sensors sensing, said one or more sensors sensing layer may be the same or different is finally obtained sensor of plurality of sensors sensing layer can be under public affairs simultaneous number regardless of the input. In the present invention, sensor-sensing layer component is changed according to the kind of gas to be detected can be, selection for the technical field well known. In a particular embodiment, said sensor sensing layer tin oxide (SnO2 ), Tungsten oxide (WO3 ), Indium oxide (In2 O3 ), Nickel oxide (NiOx ) Can be selected from the group consisting of nanoparticles comprising at least 1, said nanoparticles Pd, Ni, Pt, Rh, Cu, Ru metal catalyst selected from the group consisting of 1 or more can be a which are formed with, limited to are not correct. In another embodiment, the present invention refers to a sensitive layer sensor (i) said donor substrate for the steps of; (ii) number 2 material positioned on the substrate including the steps of providing an adhesive layer on said acceptor sensing and sensing electrodes; said sensor sensing said acceptor substrate adhesive layer (iii) donor substrate layer includes the step of face-to-face; said sensor sensing said layer (iv) transferring the adhesive layer; and (v) the sacrificial layer including a stand-alone said ZnO number, an acceptor substrate forming a sensor sensing method number under public affairs substrate. The progress of the method said of the present invention sensor sensing layer order, sensor sensitive layer of the donor substrate, integrated sensor and sensing electrodes are formed acceptor substrate the spirit. An acceptor substrate said of the present invention sensor sensing layer method after finally acceptor substrate is performed, for example for measuring resistance sensing electrodes are formed; and said sensor sensing layers are formed on the electrode sensing, ultimately to be coated comprises a gas sensor device. A gas sensor, the sensing electrodes of a gas to be detected can be sensing a change in resistance according to the density variation. Said detection object gases are NO2 , HCl, CO, acetone, but such as ammonia gas, the one number are not disclosed. The sensing electrodes platinum, gold, palladium, iridium, is, ruthenium, nickel, stainless steel (STS), aluminum, molybdenum, chromium, copper, titanium, tungsten, ITO (In doped SnO2), and FTO (F doped SnO2 ) But the one or more of the number one and not the. Number 2 material substrate include ceramic substrate, alumina substrate, silicon substrate using the deposition of an insulator layer, such as a silicon oxide gas sensor can be grudge without the material substrate can be using if the number. Sensor sensing layer sensor substrate (i.e., acceptor substrate), preferably less than about sensing are formed on the electrode substrate. The sensing electrodes acceptor substrate material substrate (i.e., material substrate number 2) on top of the technical field of a publicly known method, for example on a substrate ink coating technique, e.g. [tu the law, such as herpesvirus but formed through spin coating or, these method are not one number to gas temperature of the ice can be a pattern on a substrate as an electrode can be formed by any method. Said electrode comprising a conductive polymer can be inorganic or ink. Said inorganic material may be a Ag, Mg, Au, Al. Pr, and can have a Pd or Ni, said conductive polymer PEDOT-a PSS (poly (3, 4 a-ethlyenedioxythiophene/poly (4 a-styrenesulfonate)), POMeOPT (poly (3 - (2 '- methoxy-a 5' - octyphenyl) thiophene)) or polyaryl indoline (polyaniline) implementation being. Said electrode ink is number can be inorganic or conductive polymer solvent by mixing said high pressure liquid coolant. On the other hand, on said adhesive layer comprising the sensing electrodes need to be disclosed. In order to acceptor substrate according of the present invention method donor substrate sensor sensing color sensing electrodes formed on the sensor is firmly coupled to a donor substrate over sensing layer, metal surfaces such as sensing electrodes on sensor sensing layer to form the metal oxide component making up the interfacial bond directly outputs the appropriate interface adhesion period is converted. The interface from the means for adjusting the sensor substrate and the sensitive layer upon transfer adhesive energy acceptor donor substrate are disclosed. In addition, in the present invention said adhesive layer and a detection electrode alignment with said sensor sensing layer adhesion imparting conductivity whether in a relatively low temperature so that, at low pressure while said right, sacrificial layer including ZnO donor substrate in proper temperature and pressure conditions from those inducing transcription can be selected efficiently sensor should sense layer. Thus in a particular embodiment, said adhesive layer used in the present invention (Ag Epoxy Paste) or anisotropic conductive paste generally capable of firing at a low temperature (Anisotropic Conductive Paste) or mixtures thereof including silver paste may be disclosed. Anisotropic conductive paste polymeric binder form conductive particles dispersed toward the terminal and the temperature and pressure, the thickness of the conductive particles are contact etc. having properties such that the bursts. In a particular embodiment, said adhesive layer of said coated conductive metal paste sensing electrodes may be electrically connected, a metal paste coated onion is volatilized solvent is dried at a low temperature to 50 °, adhesive layer to be coated. In the present invention described above, the donor substrate on said ZnO ZnO sensor sensing layer contains an uneven sacrificial layer, comprising an adhesive layer on said acceptor substrate is sensing electrodes and sensing electrodes. In addition of the present invention sensor sensing layer in an acceptor substrate method, part of the adhesive layer facing said acceptor substrate forms an outermost layer of said donor substrate sensor sensitive to two-sensing layer forming apparatus is equal to the joining process. The donor substrate in the presence of technology and sacrificial layer ZnO present the results of an joining process that adheres to acceptor technology combined can be relatively mild conditions. As a result, specific embodiment, said step (iv) is 0. 5 to 2. 5 kg/cm2 Pressure, temperature and can be made at 50 to 250 °C. Preferably said step (iv) is 0. 8 to 2 kg/cm2 Pressure, VM 1 to 1. 5 kg/cm2 Pressure can be made at. When pressure too low effective adhesion when the upper wafer can be too high is installed are disclosed. Preferably less than about 80 to 200 °C is temperature and said step (iv), temperature and further 90 to 150 °C can be made. Too low temperature curing can be incomplete when one or more when applied thermal damage can be too high. Thus, the low temperature heat treatment finally gas sensor included in the acceptor substrate undergoes only the, desired physical sensor sensing layer is not exposed to high-temperature environment are achieved. Said step (v) is a stand-alone can be any method can be home even number sacrificial layer comprising ZnO. The, specific embodiment said step (v) is, method for using the acid solution can be covering. The acid solution comprises 0. 5 M hereinafter is a strong solution or dilute concentration, may be weak solution, said acid solution comprises acetic acid solution or preferably less than about 0. 5 M be a hydrochloric acid. I.e., coalesced at this stage a donor substrate and acceptor substrate comprises an acid solution immersed, ZnO nanorods etched sacrificial layers separated while the substrates to be coated. Accordingly, in a particular embodiment, said of the present invention sensor sensing layer in an acceptor substrate method, and acceptor and donor substrate of said sensor-sensitive layer can be patterned to mutually corresponding sensing electrodes of said adhesive layer. Area and structurally interrelated and acceptor substrate may result corresponding donor substrate patterned to accurately positioned in alignment-sensitive layer containing conductive metal paste adhesive layer is formed on the substrate a substrate joining surface. In a particular embodiment, identical to or different from 2 or more sensors sensing said method can be formed between the different. In the present invention number under public affairs sacrificial layer including ZnO as the above-mentioned sensor-sensitive layer formed according to the method using the same donor substrate and (transfer), sensor substrate (acceptor substrate) sub only low temperature process, the wafer scale advantage can be used directly. I.e., the second sensor sensing layer number is not one for transfer number types, quantities to allow in-situ, a plurality kinds of sensitive layer temporary transfer permits. Using the substrate of the present invention ZnO sensor sensing layer transferring donor substrate and said sacrificial layer including donor acceptor substrate sensor sensing layer high sensitivity and a low-temperature less number gas sensor method, productivity can be under public affairs number is formed in the wafer scale-sensitive layer transfer. According to the present invention in particular, a low-temperature process by applying ZnO sensor sensing layer temporarily transferring the sacrificial layer can be coated on exposure to high temperatures according to respectively implemented productivity process from thermal stress. In addition, donor substrate sacrificial layer by a combination sensor sensing layer of ZnO acceptor substrate adhesive layer printing has been at normal temperature and pressure, and acceptor substrate 2 through number one donor substrate to substrate system is composed by forming a film on the pin is pre-other features. In addition, since a simple method mounted relative to conventional good reproducibility as well as large area, irrespective of the number and type of sensitive layer or substrate where the capability of industrialization is via the disclosed. Figure 1 shows a sensor sensing a mimetic of the present invention according to a method forming an acceptor substrate mimetic also are disclosed. Hereinafter, the present invention is embodiment of the present invention in the embodiment for the person with skill in the art is provided for in the art hereinafter to the preface is with reference to a drawing detailed as follows. However the present invention refers to several different taught herein can be embodied in the form of a in the embodiment is not limited to. In the embodiment : On alumina substrate (silicon wafer) SnO2Sensor Sensitive layer Formed The first transparent substrate sol - gel method for small number donor substrate wafer ZnO seed layer is formed (Zn (NO3 )2 , 6H2 O) solution phase synthesis of number of ZnO nano-rod grown through sacrificial layer formed on the substrate. Sacrificial layer formed SnO2 Small gas sensing material paste is printed screen printing or dispensing method, a preform 2 500 °C organic binder component metal oxide sensor sensing layer in a stand-alone time number etched small number. Acceptor substrate is alumina substrate or on a silicon wafer substrate through a semiconductor process it counted, [sing the element utilizing other. Pt electrode measures a detection layer and adhesion systems comprised between and electrically conductive silver paste or anisotropic conductive paste (Anisotropic Conductive Paste) nano-particles dispersed therein by using sensing electrodes electrically connected film selectively formed on the substrate. Sensing layer is arranged in the up and down in the donor substrate acceptor substrate for transferring to sidewalls of the sensed temperature and pressure sensing electrode for applying bonding by a width substrate. 90 degree to 1 kg/cm with adhesive layer2 1 returning pressure time constant. Finally donor substrate for a stand-alone number 0. 5 M hereinafter of dilute hydrochloric acid solution coalesced wafer is put in the ZnO nano-rod number sacrificial layer formed stationary substrate. Of the present invention preferred embodiment of the present invention detailed above are described but not limited to rights range and then basic general outline of the present invention defined in the claims of which using one skilled in addition of the present invention in a range of various modified and improved form rights are disclosed. The present invention relates to a donor substrate to transfer a sensor layer, providing a wafer-scale detection layer capable of realizing low temperature and high productivity to make a high sensitive gas sensor, and a sensor layer formation method using the same. According to the present invention, the substrate comprises: a ZnO sacrificial layer placed on a material substrate; and a detection layer formed on the ZnO sacrificial layer. The ZnO sacrificial layer has a nanorod shape. COPYRIGHT KIPO 2017 ZnO material substrate located on the sacrificial layer; and said ZnO sensor sensing layer including sacrificial layer on donor substrate for sensitive layer sensor. According to Claim 1, sacrificial layer is said ZnO nanorods formed as a donor substrate. According to Claim 1, said ZnO sacrificial layer is 0. 5 to 5 will donor substrate thickness. According to Claim 1, said sensor sensing the base is employed as the donor substrate. According to Claim 1, said sensor sensing layer tin oxide (SnO2), tungsten oxide (WO3), indium oxide (In2O 3), nickel oxide (NiOx) nanoparticles selected from the group consisting of a non-donor substrate including 1 or more. According to Claim 5, said nanoparticles Pd, Ni, Pt, Rh, Cu, Ru metal catalyst selected from the group consisting of 1 or more donor substrate wherein the substrate is doped. According to Claim 1, said material is formed on the transparent substrate is donor substrate. (I) the steps of providing a sensor described in claim number 1 donor substrate for a sense layer; (ii) number 2 material positioned on the substrate including the steps of providing an adhesive layer on said acceptor sensing and sensing electrodes; said sensor sensing said acceptor substrate adhesive layer (iii) donor substrate layer includes the step of face-to-face; said sensor sensing said layer (iv) transferring the adhesive layer; and (v) the sacrificial layer including a stand-alone said ZnO number, an acceptor substrate sensor sensing layer method. According to Claim 8, said step (iv) is 0. 5 to 2. 5 kg/cm2 Pressure, temperature and also a method 50 to 250 them. According to Claim 8, said step (v) is an acid solution consists of a method for using the process method. According to Claim 10, said acid solution comprises hydrochloric acid or acetic acid solution than method. According to Claim 8, said adhesive layer (Ag Epoxy Paste) silver paste, anisotropic conductive paste (Anisotropic Conductive Paste) or mixtures thereof including a non-method. According to Claim 8, said donor substrate of said sensor-sensitive layer and acceptor compound is patterned to mutually corresponding method of sensing electrodes and adhesive layer. According to Claim 8, identical to or different from a non-sensing different 2 or more sensors formed between said method method.
