METHOD OF MANUFACTURING SINGLE CRYSTAL NANOPATTERN USING FOCUSED ELECTRON BEAM
In single crystal by using nano pattern manufacturing method relates to focused electron beam, focused electron beam number [...] provided through amorphous metal oxide there is a method for determining a size of a few nanometers to a nanostructured pattern number tank are disclosed. Recent development of nanotechnology and high-performance for when a by carrying a high and the size of the centrally located, etc. for the same number of nano-structre bath technique measures need increased. A photolithography technique is generally the optical source emits light microchips or MEMS element number but use in a tank, such as a high pressure liquid coolant nano-structre suitable number range of limit wavelength of the light isn't very sharp. A multiplicity of photolithography technique data area X - ray, electron beam, ion beam by an optical detector number exactly nano-structre attempt to bath comprising a spring. One of the electron beam without need for a trim mask excellent spatial resolution due to the most probable number jaws nano-structre branch of immunohistochemical techniques. Process for forming the metal patterning method include normal sample surface is illuminated by light beam being and techniques, electron beam utilized to increase crystallization using oxide thin film properties etc.. However generally process for back-scattered electrons are gradually lowered over a wide range of several nanometers to several nano-structre pin is critical to the formation of many difficulties. Having overcome this electron beam spatial resolution limit (transition electron microscope; TEM) by electron beam in direction transmission electron microscope studies of the bath into a fine change nano-structre number application reduces disclosed. In particular scanning transmission electron microscope (scanning transition electron microscope; STEM) atomic level insulating process for hardening the studies but reduces plower number nanostructures, such as limited number only for certain materials yes pin reduces disclosed. Recent advanced material replace silicon-based semiconductor metal oxide layer in the spotlight studies of polling place disclosed. By its very nature there is a non-conducting oxide thin film is formed on a surface of a particular nanostructured pattern and maintains the studies reported bar substantially free-equipped. The next generation of material to an oxide there is a nanostructured pattern etc. technology required. The one aspect of the present invention focused electron beam epitaxial crystal growth of epitaxial single crystal oxide catalyst interface metal oxide from a number through a bath method for nano [...] number are disclosed. In one aspect of the present invention, Crystalline metal oxide substrate with an amorphous metal oxide thin film is stacked in the silicon epitaxial layer on the [...] number; and Said substrate and said thin film at a distance from said thin film interface 3 nm hereinafter focusing step, forming a single crystal from said amorphous metal oxide film pattern; The number encoded pattern including single crystal manufacturing method of a ball. According to one in the embodiment, said substrate and said thin film on the interface between said heterojunction structure has conductive layer. According to one in the embodiment, said substrate is composed of a metal oxide having a perovskite structure, said thin film is crystallized by the irradiation of the electron beam focused said metal oxide having a perovskite structure can be amorphous material. For example, SrTiO said heterojunction structure3 On amorphous LiAlO (STO)3 (LAO) can be a thin film is formed. According to one in the embodiment, said substrate is composed of a metal oxide having a cubic structure, said thin film layer is crystallized by the irradiation of the electron beam focused said pseudo-cubic structure can be amorphous material. According to one in the embodiment, said focused electron beam largest diameter of the implementation being 2 Å. According to one in the embodiment, 0 said focused electron beam current. 16 To 0. 67 NA and, implementation being 300 KeV acceleration voltage is 200. According to one in the embodiment, said single crystal epitaxial epitaxial crystal growth can be said to be nano pattern from the substrate. In one embodiment of the manufacturing method according to single crystal pattern, insulating amorphous there is a high energy electron beam using nano-size number can be simply crystal high pressure liquid coolant. In addition, the substrate and the epitaxial growing heterojunction oxide interface from nanostructured pattern number structure [thayk grudge nanocrystals can be high pressure liquid coolant. Also in the embodiment 1 (a) is in the center of the - LAO/STO 1a to 1c also as a-grown amorphous irradiating electron beams in the crystal after high non-angle annular dark field (HAADF) and STEM Image and corresponding liquid crystalline, the resultant energy is also 1d in the embodiment 1 of X ray spectroscopic analysis (energy non-dispersive X a-ray spectroscopy, EDS) analysis result by chemical composition are disclosed. In the embodiment 2 is also a non-LAO/STO 2a 3 from electron beam is focused in interface. The center of the thin film of a non-LAO away 5 nm when this area is irradiated and HAADF STEM Image, focused electron beam 2b is also a non-LAO/STO away from the center of the thin film of a non-LAO interface when this area is irradiated HAADF STEM Image 3 nm are disclosed 3A to 3d is also a non-LAO/STO epitaxial crystallization behavior also according to comparison in the presence of conductive interface, a conductive layer on the sample at a focused electron beam is also 3a interface when this area is irradiated from 3 nm interval and, 3b also includes a conductive layer interface when this area is irradiated specimen from 3 nm interval and free interface, 3c is also focused electron beam scan when this area is irradiated and interface conductive throughout the specimen, the specimen is also 3d free scan when this area is irradiated electron beam focused throughout conductive interface are disclosed. A non-LAO/STO 4a is also a measure of the degree of graph according to current value of the electron beam when conductive interface and crystallization, crystallization of the electron beam according to current value if a non-LAO/STO 4b is also a measure of the degree of graph interface conductivity are disclosed. If conductivity is also a non-LAO/STO interface 5a, representing a distribution of electrons around a non-LAO thin film electron beam incident [...] and, when conductivity is also a non-LAO/STO 5b interface, a non-LAO [...] representing a distribution of electrons around the incident electron beam thin film are disclosed. Hereinafter, with reference to detailed implementation according to single crystal manufacturing method of drawing pattern for broadcast receiver. One aspect of the manufacturing method according to single crystal pattern, Crystalline metal oxide substrate with an amorphous metal oxide thin film is stacked in the silicon epitaxial layer on the [...] number; and Said substrate and said thin film at a distance from said thin film interface 3 nm hereinafter focusing step, forming a single crystal from said amorphous metal oxide film pattern; it contains. According to one in the embodiment, said heterojunction structure can be a cathode-ray-material. For example, a metallic oxide having a perovskite structure and said substrate, said thin film is crystallized by the irradiation of the electron beam focused said metal oxide having a perovskite structure can be amorphous material. For example, SrTiO said heterojunction structure3 On LiAlO amorphous3 The process may be disclosed. For example, a cubic structure of a metallic oxide and said substrate, said thin film layer is crystallized by the irradiation of the electron beam focused said pseudo-cubic structure can be amorphous material. A method publicly known in the field of high pressure liquid coolant through said heterojunction structure are advantageously easier to number can be, for example pulsed laser deposition on a substrate by an amorphous metal oxide thin film deposit be said. According to one in the embodiment, said substrate and said thin film on the interface between said heterojunction structure has conductive layer. For example, when using a non-LAO/STO of the silicon epitaxial layer, where there is a conductivity interface also includes a non-LAO/STO 5a, representing a distribution of electrons around a non-LAO thin film electron beam incident [...] and, when conductivity is also a non-LAO/STO 5b interface, representing a distribution of electrons around a non-LAO incident [...] thin film electron beam are disclosed. As in 5a also, if there is not an interface conductive layer where it is possible to embody the incident under negative accumulated around which is easier movement of ions occurs from LAO accelerate crystallization of interface can be made. While, as also in 5b, interface if said incident electrons are passed out of the conductive layer and the conductive layer through, which the result very slow crystallization rate, number of the electron beam from control in accordance with the shape of a pattern through [...] atomic level. , the silicon epitaxial layer on the interface between the conductive layer thin film substrate in said if, amorphous thin film the crystallization rate of number is nanocrystals [...] mask number [...] be effectively. The silicon epitaxial layer when said concentrated beam, said substrate and said thin film epitaxial layer to a stacking direction of said cross-section obtained by slicing the vertical direction of the specimen, said specimen cross-section can be the vertical direction of the focused beam. Through the use of electron beam number [...] completion sliced cross-section than the specimen with respect to a shape of a pattern can be nanocrystals for hereinafter. Said focusing the electron beam at a distance from said substrate and said thin film interface 3 nm hereinafter said thin film 103 with each other. At a distance that is greater than 3 nm from the interface, it is possible to embody sites is focused in a thin film amorphous silicon layer regardless of the thickness of the crystal crystallographic orientation can be. At a distance from said focused electron beam irradiated substrate interface 3 nm hereinafter [thayk grudge epitaxial crystal growth is made from thin film interface number [...] nanocrystals can be formed. According to one in the embodiment, said maximum largest diameter of the electron beam focused implementation being 2 Å. Said heterojunction interfaces in the range [thayk grudge epitaxial growing pattern of metal oxide from nanocrystals can be. Focused electron beam pattern size and shape and the diameter of the smaller atomic basis in number for easier to high-resolution Image view for thermally processing hereinafter disclosed. On the other hand, a maximum diameter of the focused electron beam increases small, thin film applied to a distance from the interface can be reduced. According to one in the embodiment, 0 said focused electron beam current. 16 To 0. 67 NA and, 200 to 300 KeV acceleration voltage implementation being. Said heterojunction interfaces in the range [thayk grudge epitaxial single crystal of metal oxide from growing for nano can be effective. In recent electronic material layer and the nanostructured number bath and patterning technology in the databases of the increase, the electron beam in the electron beam control system and engage with a material by using crystallization atomic level can form a pattern number [...] amorphous material to determine the other. Hereinafter incorporated in the embodiment and comparison of an exemplary implementations of more specifically described. Stage, embodiments of the present invention range in the embodiment and comparison to exemplify the technical idea for only thereof as is defined in which tastes. In the embodiment 1: Focusing Identifying nano-structre crystal forming of using electron beam In the circulating path to the monocrystalline metal oxide nano-structre down using electron beam has been confirmed. The pulsed laser deposition (pulsed laser deposition) method using bulk sample TiO2 - Terminated SrTiO3 (STO) into a LaAlO3 (LAO) thin film at ambient temperature oxygen atmosphere was number through the high pressure liquid coolant. Thin film deposition in the oxygen partial pressure pulse lasers used 1 1 mTorr. 5 J/cm2 The energy of 2 Hz repetition rate between themselves. In addition, pulsed laser deposition target material in 50 mm distance STO LAO substrate has been set. The thickness of the thin film substrate LAO min 26 nm amorphous prepared by the number. Said number by observation under transmission electron microscope and electron beam irradiation for mechanical polishing and argon bulk produced therewith through ion milling, high pressure liquid coolant was about 50 nm thickness cross-section test sample number. Said thin-film portion in the vertical direction by irradiating electron beam transmission electron microscope insulating amorphous LAO nano-structre number his determination of high pressure liquid coolant. 300 Kv and focusing of the electron beam acceleration voltage is used, spot size 6 been irradiated. When irradiated electron beam convergence angle is 17. 80 Rad is 260 mm camera length and are disclosed. Under these conditions does not exceed a maximum diameter of an electron beam in the sample in 2 Å. (A) the center of the crystal axis is also 1a to 1c also as a-grown amorphous - LAO/STO after irradiating electron beams in high non-angle annular dark field (HAADF) STEM Image exhibits. 0 Current of the electron beam. 34 NA min There is also a non-LAO electron beam used to sample any crystal lattice in the membrane cannot be observed but, after irradiation electron beam in an epitaxial layer on the substrate is also 1a STO appears to be bright as interface between atomic layer is also used for newly appears from the queue. Since the number of the newly formed STO HAADF STEM Image is proportional to the product of an atom number in response to the data including a presence on bright [khen sprout the [su it sprouts La exhibits. By the very high strength of La Al of atoms column is visible but not processes Image, filtered Image is located at a center of the hole are well La Al 1b was found. Also 1a 1c also includes a fast Fourier transform (fast Fourier transform, FFT) display red and black in an inner region is a thereon are disclosed. In 1c also as, newly grown crystals are 3. 8 Å psedocubic structure making up the lattice constant can be well know. 1D X ray spectroscopic analysis is also energy (energy non-dispersive X a-ray spectroscopy, EDS) analysis result by chemical composition are disclosed. In 1d also as, La: Al: O elements can be about 1:1:3 know about. Such crystal structure and chemical composition analysis by electron beam based on the perovskite-type pseudocubic structure LaAlO growth crystal areas3 Can be know about. In the embodiment 2: LAO crystallization behavior of electron beam Focusing Position according to influence assessing This electron beam for electron beam focusing position according to influence behavior by crystallization of LAO was able to confirm the following. In a high pressure liquid coolant using a non-LAO/STO specimen number said in the embodiment 1, the center of the crystal axis on said 0. 34 NA Å-2 Irradiating electron beams having current density of him. The diameter of the electron beam irradiated in a scanning transmission electron microscope sample is detected not larger than maximum 2 Å. As in Figure 2 , the focused electron beam from a non-LAO/STO interface 3. (Part (a) of Figure 2) when a non-LAO away 5 nm thin film 103, where it is possible to embody [...] about progress in making sure that the crystallization being perpendicular to first call request. While, focused electron beam from a non-LAO/STO interface (of Figure 2 (b) portion) away 3 nm when a non-LAO thin film 103, interface form epitaxial crystal growth occurs from grain orientation along [thayk grudge LAO STO substrate were making sure that the bloom the mitt. These results from single crystal epitaxial monocrystalline substrate position of an electron beam from [thayk grudge amorphous thin film crystal growth interface can be know magnets along possible number. Maximum 2 Å by electron beam having a diameter of about 3 nm radius about a convergence threshold can crystallize can be known. In the embodiment 3: A non-LAO/STO interface conductivity according to crystallization behavior characterization A non-LAO/STO interface state according to the difference of the crystallization behavior was able to confirm the following. Pulsed laser deposition (PLD) under oxygen atmosphere using TiO2 The STO LAO - terminated if a non-conducting substrate depositing a thin film at the interface on both STO LAO having electrically conductive 2 dimensional electron gas (2 a-dimensional electron gas, 2DEG) specific behaviour is formed which, after heat-treatment in oxygen atmosphere if this interface conduction is disappearance substrate. Oxygen partial pressure of 300 Torr and temperature of said heat treatment is 500 °C heat the matter. 3A to 3d is also a non-LAO/STO epitaxial crystallization behavior according to the presence of conductive interface also are disclosed. In 3a as also, if a non-LAO/STO conductive interface, focused electron beam irradiated from a non-LAO/STO interface 3 nm interval is narrow the focal pyramid form epitaxial crystallized progress has been confirmed. This crystallization growth along the electron beam move in terms of electron beam. While, as also in 3b, the conductive interface if there is not a non-LAO/STO [...] number crystallization molecules in which the rate can be very rapid. The, this interface conductivity state process for hardening the number [...] be nanostructured oxide crystal growth velocities and sizes at or. As well as, only a point electron beam irradiating the specimen but is the observing an irradiation scan interface state even if polysilicon exhibits behavior. In 3c also as, in the case of irradiating electron beams even when the substrate having conductive interface 180 seconds from the specimen while group two atomic layer only, as also in 3d, such as atomic layer 6 layer is conductive interface if there is not an alkyl group can be that of a period of time. Said result, in order to pattern the photo process for determination of any conductive layer on the oxide heterojunction interface advantageously can be know. In the embodiment 4: Electron beam current density according to crystallization behavior characterization In addition incident electron beam current density of the electron beam by crystallization of amorphous oxide affecting behavior downward has been confirmed. 0 Electron beam current. 16 NA in 0. 67 NA while increasing, interface layer and a conductive layer on a non-LAO/STO crystallization in the sample specimen observed behavior. In 4a also as, in the case of the current value of the electron beam specimen a a-LAO/STO conductive interface 180 seconds LAO layer change was hardly any increase of the crystallization. However, if a non-LAO/STO 4b as also in interface conductivity along a current increases the amount fallen short of know crystallization can be remarkably increased. Said result, a non-LAO/STO incident electrons rotor blade or a channel interface conductive layer pattern is formed than that of the crystallization rate can be, if there is not an electron conductive layer interface opposite a non-LAO/STO incident caused crystallization is accelerated can be beat. In the embodiment in the present invention according to a preferred implementation is described with reference to the drawing and more but, this exemplary to avoid a and, if the person with skill in the art art therefrom in various deformation and equally to the other implementation enabling understand it will rain. The, of the present invention scope of protection will be defined by the appended claim. Provided is a method of manufacturing a single crystal nanopattern. According to a method of manufacturing a single crystal nanopattern, a nanosized crystal pattern is able to easily be fabricated in an amorphous thin film using a focused electron beam of high energy. In addition, a crystal pattern of nanostructure is grown from an interface of a heterojunction oxide to form a substrate and an epitaxial nanocrystal structure. In order to control a nanocrystalline pattern to an atomic size, it is advantageous to form a conductive layer at a non-conducting heterojunction interface. COPYRIGHT KIPO 2018 Crystalline metal oxide substrate with an amorphous metal oxide thin film is stacked in the silicon epitaxial layer on the number [...]; and said substrate and said thin film at a distance from said thin film interface 3 nm hereinafter focusing step, forming a single crystal from said amorphous metal oxide film pattern; including a pattern of single crystal manufacturing method. According to Claim 1, said heterojunction structure on the interface between said substrate and said thin film manufacturing method of the conductive pattern of the crystal. According to Claim 1, said substrate and said non-conducting thin film is single crystal nano pattern manufacturing method. According to Claim 1, said substrate is composed of a metal oxide having a perovskite structure, said thin film is crystallized by the irradiation of the electron beam focused said amorphous metal oxide having a perovskite structure is composed of a material pattern of single crystal manufacturing method. According to Claim 4, SrTiO said heterojunction structure3 On LiAlO amorphous3 The crystal manufacturing method of a thin film pattern. According to Claim 1, said substrate is composed of a metal oxide having a cubic structure, said thin film is crystallized by the irradiation of the electron beam focused said pseudo-cubic structure is composed of a material pattern manufacturing method of single crystal layer is amorphous. According to Claim 1, said heterogeneous structure has a pulsed laser deposition number bath by a monocrystalline nano pattern manufacturing method. According to Claim 1, said substrate and said thin film epitaxial layer to a stacking direction of said sample is first obtained by slicing the vertical direction of the cross-section, said cross-section of irradiating electron beams made of the vertical center of the single crystal manufacturing method of a method of said pattern. According to Claim 1, 0 said focused electron beam current. 16 To 0. 67 NA and, acceleration voltage of 200 to 300 KeV pattern in single crystal manufacturing method. According to Claim 1, said substrate and said single crystal epitaxial epitaxial grown single crystal nano pattern the nano pattern and a recording medium manufacturing method.
