Transistor with independent gate structures

20-03-2007 дата публикации

Номер:

US7192876B2

Автор: Leo Mathew, Ramachandran Muralidhar, Robert F. Steimle

Принадлежит: FREESCALE SEMICONDUCTOR INC

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

B B8 B82 B82Y B82Y4 B82Y40 B82Y40/B82Y40/0 B82Y40/00 G G1 G11 G11C G11C1 G11C16 G11C16/G11C16/0 G11C16/04 G11C16/045 G11C16/0458 G11C16/047 G11C16/0475 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/1 H01L21/18 H01L29 H01L29/H01L29/6 H01L29/66 H01L29/667 H01L29/6679 H01L29/66795 H01L29/668 H01L29/6681 H01L29/66818 H01L29/7 H01L29/78 H01L29/785 H01L29/788 H01L29/7881 H01L29/7887 H01L29/79 H01L29/792 H01L29/7923 H1 H10 H10B H10B4 H10B41 H10B41/H10B41/3 H10B41/30 H10B6 H10B69 H10B69/H10B69/0 H10B69/00

IPC - классификация

B B8 B82 B82Y B82Y2 B82Y25 B82Y25/B82Y25/0 B82Y25/00 B82Y3 B82Y30 B82Y30/B82Y30/0 B82Y30/00 G G0 G03 G03F G03F1 G03F1/G03F1/2 G03F1/24

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