MAGNETIC RANDOM ACCESS MEMORY AND DEVICE, AND READ-WRITE CONTROL METHOD

A magnetic random access memory and device, and a read-write control method. The magnetic random access memory comprises: a ferroelectric layer (110); a dielectric layer (120) provided above the ferroelectric layer (110); and a magnetic tunnel junction, wherein at least one part of the magnetic tunnel junction is provided on the dielectric layer (120). The present invention can significantly improve the interface effect of the dielectric layer (120) and the magnetic tunnel junction, thereby greatly improving a VCMA effect provided for the magnetic tunnel junction, and further optimizing the performance of the magnetic random access memory, such as power consumption, a writing speed, and thermal stability.