УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ КРИСТАЛЛОВ КАРБИДА КРЕМНИЯ

Изобретение относится к технике для выращивания кристаллов карбида кремния на подложках. Устройство содержит камеру (1), расположенную вдоль оси, причем камера (1) включает отдельные средства (2, 3) для входа газов, содержащих углерод, и для газов, содержащих кремний, средство для поддерживания подложки (4), расположенное в первой концевой зоне (Z1) камеры, средство для выпуска отработанных газов (5), расположенное вблизи средства для поддерживания (4), и средство для нагревания, обеспечивающее нагревание камеры (1) до температуры свыше 1800°C; средство (2) для входа газов, содержащих кремний, которое размещено, сформировано и отрегулировано таким образом, что газы, содержащие кремний, входят во вторую концевую зону (Z2) камеры; средство (3) для входа газов, содержащих углерод, которое размещено, сформировано и отрегулировано таким образом, что углерод и кремний контактируют, по существу, в центральной зоне (ZC) камеры, удаленной и от концевой первой зоны (Z1) и от концевой второй зоны ...

КРИСТАЛЛ SiC ДИАМЕТРОМ 100 мм И СПОСОБ ЕГО ВЫРАЩИВАНИЯ НА ВНЕОСЕВОЙ ЗАТРАВКЕ

Изобретение относится к полупроводниковым материалам и технологии их получения и может быть использовано в электронике. Полупроводниковый кристалл карбида кремния содержит монокристаллическую затравочную часть 21 и монокристаллическую выращенную часть 22 на указанной затравочной части 21, при этом затравочная 21 и выращенная 22 части образуют по существу правильный цилиндрический монокристалл карбида кремния 20, причем границу раздела между выращенной и затравочной частью определяет затравочная грань 23, которая по существу параллельна основаниям указанного правильного цилиндрического монокристалла 20 и имеет отклонение от оси на угол примерно 0,5°-12° относительно базовой плоскости 26 монокристалла 20, а указанная монокристаллическая выращенная часть воспроизводит политип указанной монокристаллической затравочной части и имеет диаметр, по меньшей мере, примерно 100 мм. Изобретение обеспечивает получение высококачественных (с малым содержанием дефектов) монокристаллов карбида кремния большого ...

СПОСОБ ПРОИЗВОДСТВА ПОДЛОЖКИ НА ОСНОВЕ КАРБИДА КРЕМНИЯ И ПОДЛОЖКА КАРБИДА КРЕМНИЯ

Изобретение относится к технологии получения подложки из поликристаллического карбида кремния. Способ состоит из этапов предоставления покрывающих слоев 1b, каждый из которых содержит оксид кремния, нитрид кремния, карбонитрид кремния или силицид металла, выбранного из группы, состоящей из никеля, кобальта, молибдена и вольфрама, или покрывающих слоев, каждый из которых изготовлен из фосфоросиликатного стекла (PSG) или борофосфоросиликатного стекла (BPSG), имеющего свойства текучести допированного P2O5или B2O3и P2O5,на обеих поверхностях основной подложки 1a, изготовленной из углерода, кремния или карбида кремния для подготовки поддерживающей подложки 1, имеющей покрывающие слои, каждый из которых имеет гладкую поверхность; формирования пленок 10 поликристаллического карбида кремния на обеих поверхностях поддерживающей подложки 1 осаждением из газовой фазы или выращиванием из жидкой фазы; и химического удаления, по меньшей мере, покрывающих слоев 1b в поддерживающей подложке для отделения ...

УСТРОЙСТВО ДЛЯ ПРОИЗВОДСТВА МОНОКРИСТАЛЛИЧЕСКОГО НИТРИДА АЛЮМИНИЯ, СПОСОБ ПРОИЗВОДСТВА МОНОКРИСТАЛЛИЧЕСКОГО НИТРИДА АЛЮМИНИЯ И МОНОКРИСТАЛЛИЧЕСКИЙ НИТРИД АЛЮМИНИЯ

Изобретение относится к технологии получения монокристаллического нитрида алюминия, который входит в состав светоизлучающих диодов и лазерных элементов. Устройство включает тигель 9, во внутренней части которого находится исходный нитрид алюминия 11 и затравочный кристалл 12, помещенный таким образом, чтобы находиться напротив исходного нитрида алюминия, при этом тигель 9 состоит из внутреннего тигля 2 с исходным нитридом алюминия 11 и затравочным кристаллом 12 внутри себя, причем внутренний тигель является коррозионностойким к сублимационному газу исходного нитрида алюминия и содержит единый корпус из металла, имеющего ионный радиус, превышающий ионный радиус алюминия, или содержит нитрид металла; и из внешнего тигля 4, изготовленного из нитрида бора, который покрывает внутренний тигель 2. Тигель 9 может дополнительно содержать графитовый тигель 6, покрывающий внешний тигель 4. Изобретение позволяет получать нитрид алюминия высокого уровня чистоты (с концентрацией углерода не более 10 ...

УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ КРИСТАЛЛОВ КАРБИДА КРЕМНИЯ

... 1. Устройство для выращивания кристаллов карбида кремния на подложках, содержащее камеру, которая расположена вдоль оси, включающая отдельные средства для входа газов, содержащих углерод и для газов, содержащих кремний, средство для поддерживания подложки, расположенное в первой концевой зоне камеры, средство для выпуска отработанных газов, расположенное вблизи средства для поддерживания, средство для нагревания, обеспечивающее нагревание камеры до температуры, более чем примерно 1800°C, при этом средство для входа газов, содержащих кремний, размещено, сформировано и отрегулировано таким образом, что газы, содержащие кремний, проходят во вторую концевую зону камеры, отличающееся тем, что средство для входа газов, содержащих углерод, размещено, сформировано и отрегулировано таким образом, что углерод и кремний контактируют по существу в центральной зоне камеры, удаленной и от концевой первой зоны и от концевой второй зоны. 2. Устройство по п.1, в котором средство для входа газов, содержащих ...

СПОСОБ ИЗГОТОВЛЕНИЯ КОМПОЗИТНОЙ ПОДЛОЖКИ SiC И СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОЙ ПОДЛОЖКИ

Verfahren zum Herstellen eines SiC-Einkristalls

Bei einem Verfahren zum Herstellen eines SiC-Einkristalls wird der SiC-Einkristall an einem SiC-Impfkristall gezüchtet durch Inkontaktbringen des SiC-Impfkristalls, welcher an einer drehbaren Impfkristall-Befestigungsstange befestigt ist, mit einer dltenden Schmelze in einem drehbaren Tiegel hergestellten Lösung. Das Verfahren weist auf: Starten einer Rotation der Impfkristall-Befestigungsstange, und Starten einer Rotation des Tiegels nach einer vorbestimmten Verzögerungszeit (Td); dann gleichzeitiges Stoppen der Rotation der Impfkristall-Befestigungsstange und der Rotation des Tiegels; dann Stoppen der Impfkristall-Befestigungsstange und des Tiegels für eine vorbestimmte Haltezeit (Ts); und Wiederholen eines Rotation/Stopp-Zyklus.

SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät

VORRICHTUNG ZUR ZÜCHTUNG VON GROSSEN SILIZIUMKARBIDEINKRISTALLEN

VERFAHREN ZUR HERSTELLUNG VON SILIZIUMKARBIDKRISTALL MIT GERINGEM WIDERSTAND

Siliziumkarbid und Verfahren zu seiner Herstellung

Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat

Verfahren zur Herstellung mindestens eines semiisolierenden zur Herstellung von Halbleiter- und/oder Hochfrequenzbauelementen bestimmten SiC-Volumeneinkristalls (2; 33) mit einem spezifischen elektrischen Widerstand von mindestens 10Ωcm, wobeia) in mindestens einem Kristallwachstumsbereich (5; 36) eines Züchtungstiegels (3; 34) eine SiC-Wachstumsgasphase (9; 38) erzeugt wird und der SiC-Volumeneinkristall (2; 33) mittels Abscheidung aus der SiC-Wachstumsgasphase (9; 38) aufwächst,b) die SiC-Wachstumsgasphase (9; 38) aus einem SiC-Quellmaterial (6; 31), das sich in einem SiC-Vorratsbereich (4; 35) innerhalb des Züchtungstiegels (3; 34) befindet, gespeist wird, wobei ein Materialtransport von dem SiC-Vorratsbereich (4; 35) zu einer Wachstumsgrenzfläche (16; 39) des aufwachsenden SiC-Volumeneinkristalls (2; 33) stattfindet,c) dem Kristallwachstumsbereich (5; 36) Vanadium als ein Dotierstoff des aufwachsenden SiC-Volumeneinkristalls (2; 33) zugeführt wird,d) an der Wachstumsgrenzfläche (16; ...

VERFAHREN ZUR HERSTELLUNG VON SILIZIUM-EINKRISTALLEN

Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls

SILICON CARBIDE

PRODUCING SILICON NITRIDE

Wafer bow reduction

Production of single-crystal semiconductor material using a nanostructure template

Process for manufacturing whisker preform for composite material

In a process for manufacturing a whisker preform for a composite material, a dispersion of a whisker in water or an organic solvent is passed through a sieve and is filtered, and a residual wet whisker cake is dried, with or without prior compression, to produce a cake having a desired density based upon the relationship between the weight of the whisker in the dispersion and the volume of the residual whisker cake after filtration.

Improvements in or relating to the manufacture of crystals of semiconductor materials

... In a process for growing silicon carbide epitaxially, P-type silicon carbide crystals 4 are disposed at an angle to the horizontal in a sealed graphite vessel 1 containing lumps of silicon 6. A temperature difference is maintained between the top and bottom of the vessel by locating it in an eddy current heating coil or passing current through its walls by mounting between electrodes within a graphite shield in a water-cooled container (Fig. 2, not shown). The silicon melts (submerging the substrate crystals) and reacts with the graphite vessel to produce silicon carbide which is slightly soluble in the silicon. The carbide grows epitaxially on the cooler substrate crystals as N-type material due either to excess silicon or nitrogen included in the graphite.

CONTINUOUS REACTION FURNACE

Manufacture of silicon carbide fibres

Submicroscopic b -SiC fibres are made by mixing SiO2 and C in a molar ratio of 1:1 to 10 in a reaction chamber, reacting the mixture at 1375 DEG to 1575 DEG C. in the presence of a COcontaining atmosphere, the CO having a partial pressure of 5 to 500 mm. Hg, forming the fibres from the reaction product at 1050 DEG to 1380 DEG C. and cooling the fibres to room temp. The atmosphere may also contain at least one of H2, He, N, and Ar and have a sum of partial pressures of 760 mm. Hg. The time to form the fibres may be 2 to 24 hrs. The reaction chamber may be evacuated to an abs. pressure of not more than 5 mm. Hg and heated to 600 DEG C. after providing the SiO2 and C mixture so as to allow complete degassing. The fibres may be cooled by cooling the chamber to 600 DEG C., introducing air and cooling further to room temp. The fibres have an average diameter of 250 <\>rA, a length up to 100m , a length to diameter ratio of 40,000:1 and have a surface sheath of SiO2.

Process for the manufacture of nuclear matters comprising a metal component, in particular ceramic nuclear fuels, and installation allowing the realization of this process.

SEED CRYSTAL FROM SILICON CARBIDE SINGLE CRYSTAL AND PROCEDURE FOR THE PRODUCTION OF A STAFF THEREBY

PROCEDURE FOR THE PRODUCTION OF SIC CRYSTAL

PROCEDURE AND DEVICE FOR THE PRODUCTION OF SILICON CARBIDE CRYSTALS

PROCEDURE FOR THE PRODUCTION OF MONOCRYSTAL FIBERS FROM SILICON CARBIDE.

HIGH IMPEDANCE SILICON CARBIDE AND PROCEDURE FOR ITS PRODUCTION

BREEDING OF VERY EVEN ONE EPITAKTI LAYERS FROM SILICON CARBIDE

PROCEDURE AND DEVICE FOR EPITAKTI GROWING OF OBJECTS

FAR AND REACTOR FOR BREEDING OF SILICON CARBIDE EINKRISTALLUNG BY CHEMICAL STEAM SEPARATION

DEVICE TO ZUCHTUNG SILICON CARBIDE SINGLE CRYSTALS

PROCESS FOR PRODUCING SILICON CARBIDE PLATELETS AND THE PLATELETS SO-PRODUCED

Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes

METHOD OF MAKING CARBIDE, NITRIDE AND BORIDE POWDERS

RECOVERING SILICON CARBIDE WHISKERS

Deposition of transition metal carbides

Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy

Method for depositing nanolaminate thin films on sensitive surfaces

SILICON CARBIDE WHISKERS

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A silicon carbide substrate (1) with which manufacturing cost of a semiconductor device using the silicon carbide substrate can be reduced is provided with: a base substrate (10) composed of a silicon carbide; and a SiC layer (20), which is composed of single crystal silicon carbide other than the silicon carbide of the base substrate (10) and is disposed on the base substrate (10) in contact with the base substrate. Thus, in the silicon carbide substrate (1), the silicon carbide single crystal can be effectively used.

SILICON CARBIDE SUBSTRATE

Disclosed is a silicon carbide substrate (1) that can be prevented from warping even in cases where a different material layer, which is formed from a material other than silicon carbide, is formed thereon. The silicon carbide substrate (1) comprises a base layer (10) that is formed from silicon carbide, and a plurality of SiC layers (20) that are formed from single crystal silicon carbide and aligned on the base layer (10) when viewed in plan. A gap (60) is provided between the end faces (20B) of SiC layers (20) that are adjacent to each other.

SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE

An SiC ingot (10a) includes a bottom face (12a) having 4 sides; four side faces (12b, 12c, 12d, 12e) extending from the bottom face (12a) in a direction intersecting the direction of the bottom face (12a); and a growth face (12f) connected with the side faces (12b, 12c, 12d, 12e), located at a side opposite to the bottom face (12a). At least one of the bottom face (12a), the side faces (12b, 12c, 12d, 12e), and the growth face (12f) is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

LASER ASSISTED FIBER GROWTH

The present invention provides an apparatus for producing fibers composed of one of the group of substances including amorphous boron, single crystal silicon, polycrystalline silicon, silicon carbide and silicon nitride comprising a laser, a reaction chamber and a supply of gaseous raw materials. The laser is focused at a point in the reaction chamber and the gaseous reactants combine to continuously form the fiber at that point.

TANTALUM CARBIDE-COATED CARBON MATERIAL AND PRODUCTION METHOD THEREOF

The problem of the present invention is provision of a tantalum carbide-coated carbon material having superior corrosion resistance to reducing gas and superior resistance to thermal shock at a high temperature and a production method thereof. According to the present invention, a tantalum carbide--coated carbon material having a carbon substrate and a coating film formed directly or via an intermediate layer on the aforementioned carbon substrate can be provided. The coating film consists of a number of microcrystals of tantalum carbide, which are densely gathered and, in an X-ray diffraction pattern of the coating film, the diffraction intensity of the (220) plane of tantalum carbide preferably shows the maximum level, more preferably, the aforementioned diffraction intensity is not less than 4 times the intensity of the second highest diffraction intensity.

METHOD OF MANUFACTURING SUBSTRATES HAVING IMPROVED CARRIER LIFETIMES

This invention relates to a method for depositing silicon carbide materia l onto a substrate such that the resulting substrate has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixtur e comprising a chlorosilane gas, a carbon- containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000 °C but less than 2000 °C; with the pr oviso that the pressure within the reaction chamber is maintained in the ran ge of 0.1 to 760 torr. This invention also relates to a method for depositin g silicon carbide material onto a substrate such that the resulting substrat e has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon- containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a rea ction chamber containing a substrate; and b. heating the substrate to a temp erature ...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Disclosed is a method for manufacturing a semiconductor device, which com prises a step for forming an SiC film, a step for forming a trench (20) in t he surface of the SiC film, a heat treatment step for heating the SiC film w hile supplying Si to the surface of the SiC film, and a step for forming a p lurality of macrosteps (1), which are obtained in the surface of the SiC fil m by the heat treatment step, into channels. When the period of the trench ( 20) is represented by L and the height of the trench (20) is represented by h, the period L and the height h satisfy the following relation: L = h(cot.a lpha. + cot.beta.) (wherein .alpha. and .beta. are respectively a variable s atisfying 0.5 <= .alpha. and .beta. <= 45). This method enables to obt ain a semiconductor device having improved characteristics.

SUBSTRATE, SUBSTRATE WITH THIN FILM, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Provided are a substrate which suppresses deterioration of processing accuracy of a semiconductor device due to the warping of the substrate, a substrate provided with a thin film, a semiconductor device formed using the abovementioned substrate, and a method for manufacturing said semiconductor device. In the substrate (1), the diameter of the main surface (1a) is 2 inches or more, the bow value of the main surface (1a) is -40 µm to -5 µm, and the warp value of the main surface (1a) is 5 µm to 40 µm. The value of the surface roughness (Ra) of the main surface (1a) of the substrate (1) is preferably 1 nm or less and the value of the surface roughness (Ra) of the main surface (1b) is preferably 100 nm or less.

COMPOUND SEMI-CONDUCTORS AND CONTROLLED DOPING THEREOF

COMPOUND SEMI-CONDUCTORS AND CONTROLLED DOPING THEREOF A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

Verfahren zum Herstellen von Siliziumkarbidkristallen durch Sublimation

Verfahren zur Herstellung von Einkristallen von Kernbrennstoffen mit metallischer Komponente, insbesondere von keramischen Kernbrennstoffen, und Anordnung zur Durchführung des Verfahrens

Verfahren und Vorrichtung zur Herstellung von B-Siliziumkarbid

Verfahren zur Herstellung von Whiskers

Verfahren zur Herstellung von Siliciumcarbid in Form von Whiskers

Verfahren zur Herstellung von faserförmigem Siliciumcarbid

Verfahren zur Herstellung von drahtförmigen Kristallen

Verfahren zur Herstellung einer Halbleitervorrichtung auf aus Einkristallen bestehenden Substraten

Verfahren zur Herstellung von Siliciumcarbidwhiskers

Verfahren zur Herstellung draht- oder bandförmiger Siliziumkarbidkristalle

Verfahren zur Herstellung von Siliziumkarbidkristallen

Verfahren zur Herstellung von kristallinem Silicumkarbid

Verfahren zur Herstellung von aus Siliciumkarbid-Einkristallen bestehenden Haarkristallen kreisförmigen Querschnitts

Procédé de préparation de filaments de carbure de silicium

Verfahren zum Herstellen von monokristallinem Siliziumkarbid und dessen Verwendung

Silicon carbide whisker prodn - by passing hydrogen and halogen over silicon, carbon and a substrate

Stream of H contg. pref. Cl2 is passed over pulverulent Si (purity 98-99), then over pulverulent C (both heated to 1100-1550 degrees C), and finally over a substrate (such as graphite, C, alumina or bauxite) heated to 1000-1300 degrees C on which SiC whiskers grow. High purity Si is not necessary.

Procédé de préparation de filaments de carbure de silicium

Verfahren zur Herstellung von Siliciumkarbidkristallen

VERFAHREN ZUR HERSTELLUNG VON WHISKERS.

METHOD OF PREPARING CRUCIBLE FOR GROWING SINGLE CRYSTALS OF SILICON CARBIDE

System for growing silicon carbide crystals

Process for production of silicon carbide single crystal, and silicon carbide substrate

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Silicon carbide substrate

Thermal field structure of growing silicon carbide single crystal

Process for production of silicon carbide substrate

Apparatus for producing silicon carbide single crystal

SEMICONDUCTOR INGOT INSPECTING METHOD AND APPARATUS, AND LASER PROCESSING APPARATUS

Wafer generation method

IMPROVEMENTS IN THE MANUFACTURE OF SILICON CARBIDE

Manufactoring process of devices semiconductors on substrates monocristrats flaxes

Procedure for the production of silicon carbide whiskers

METHOD FOR GROWING AT LEAST ONE NANOWIRE FROM A LAYER OF A TRANSITION METAL NITRIDE OBTAINED TWO-STAGE

Le procédé de croissance d'au moins un nanofil (3) semi-conducteur, ledit procédé de croissance comporte une étape de formation, au niveau d'un substrat (1), d'une couche de nucléation (2) pour la croissance du nanofil (3) et une étape de croissance du nanofil (3). L'étape de formation de la couche de nucléation (2) comporte les étapes suivantes : le dépôt sur le substrat (1) d'une couche d'un métal de transition (4) choisi parmi Ti, V, Cr, Zr, Nb, Mo, Hf, Ta ; la nitruration d'au moins une partie (2) de la couche de métal de transition de sorte à former une couche de métal de transition nitruré présentant une surface destinée à la croissance du nanofil (3).

SILICON CARBIDE JUNCTION DIODE

Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

Single Crystal Growth Apparatus

SILICON CARBIDE PRODUCT, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING SILICON CARBIDE PRODUCT

METHOD TO MANUFACTURE LARGE UNIFORM INGOTS OF SILICON CARBIDE BY SUBLIMATION/CONDENSATION PROCESSES

... 본 발명은 이하의 단계들을 포함하는, 실리콘 탄화물의 모놀리식 주괴의 제조방법에 관한 것이다: i) 폴리실리콘 금속 칩과 탄소 분말을 포함하는 혼합물을 마개가 달린 원통형 반응 셀에 도입하는 단계; ii) 상기 i) 단계의 원통형 반응 셀을 밀봉하는 단계; iii) 상기 ii) 단계의 원통형 반응 셀을 진공로(vacuum furnace)에 도입하는 단계; iv) 상기 iii) 단계의 진공로를 배기시키는 단계; v) 상기 iv) 단계의 진공로에 대기압 부근까지 실질적으로 불활성인 가스인 가스 혼합물을 충전시키는 단계; vi) 상기 v) 단계의 진공로 내의 상기 원통형 반응 셀을 1600℃ 내지 2500℃의 온도까지 가열시키는 단계; vii) 상기 vi) 단계의 원통형 반응 셀 내의 압력을 50torr 이하 0.05torr 이상까지 감압시키는 단계; 및 viii) 상기 vii) 단계의 원통형 반응 셀의 마개의 안쪽 상에 증기의 실질적인 승화 및 응결을 허용하는 단계.

PREPERATION METHOD FOR SiC INGOT, THE SiC INGOT AND A SYSTEM THEREOF

SILICON CARBIDE AND METHOD OF MANUFACTURING THE SAME

Method for producing silicon carbide single crystal

탄화 규소의 결정의 제조 방법 및 결정 제조 장치

... 탄화 규소의 오프 기판 상에 표면 거칠기를 억제하면서 탄화 규소의 단결정을 성장시키는 것이 가능한 방법을 얻는다. 탄화 규소의 종결정을, 규소 및 탄소를 포함하는 원료 용액에 접촉시키면서 회전시키는 탄화 규소의 결정의 제조 방법에 있어서, 상기 종결정의 결정 성장면은 오프각을 갖고, 상기 종결정의 회전 중심의 위치가, 상기 종결정의 중심 위치에 대하여, 상기 오프각의 형성 방향인 스텝 플로우 방향의 하류측에 있는 것을 특징으로 하는 탄화 규소의 결정의 제조 방법을 이용한다.

Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate

Provided is a supporting substrate ( 30 ) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate ( 10 ) composed of a silicon carbide polycrystalline body, and a coat layer ( 20 ) deposited on the silicon carbide polycrystalline substrate ( 10 ). The coat layer ( 20 ) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface ( 22 ) of the coat layer ( 20 ) in contact with the single crystalline wafer is 1 nm or less.

Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes

This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

Method of production of sic single crystal

The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Halogen assisted physical vapor transport method for silicon carbide growth

A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

Sublimation growth of sic single crystals

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

Silicon carbide powder and method for producing silicon carbide powder

There are provided a silicon carbide powder for silicon carbide crystal growth and a method for producing the silicon carbide powder. The silicon carbide powder is formed by heating a mixture of a silicon small piece and a carbon powder and thereafter pulverizing the mixture, and is substantially composed of silicon carbide.

Method of production of sic single crystal

The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 10° C./cm or less.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further ...

METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

In a powder fabrication step (S) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (). In a purification process step (S), the sublimation starting material () is disposed in a purified graphite crucible (), and a sublimation/growth step (S) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas. 1. A method of producing a silicon carbide single crystal employing a production apparatus having a graphite member formed of graphite , disposing a raw material including a silicon carbide in the graphite member , and heating and sublimating the raw material and growing a single crystal of the silicon carbide on a seed crystal in an atmospheric gas , the method comprising:the step of fabricating the raw material by mixing a metal material including a transient metal atom with a silicon carbide source including the silicon carbide;the step of purification treatment to retain the graphite member under a temperature condition of 2,000 degrees C. or more, in an inert gas atmosphere of 100 Pa to 100 kPa; andthe step of disposing the raw material in the graphite member subsequent to the step of purification treatment, and heating and sublimating the raw material and growing a silicon carbide single crystal on the seed crystal.2. The method of producing a silicon carbide single crystal according to claim 1 , whereinthe silicon carbide source is a silicon carbide polycrystalline substance produced by means of a chemical vapor ...

Method for controlled growth of silicon carbide and structures produced by same

A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.

Method for manufacturing a silicon carbide wafer and respective equipment

An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

Low 1c screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm −2 to about 2000 cm −2 .

Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbide

A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit.

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph , wherein upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm , a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak is observed at a lower wavenumber than that of the TO peak.3. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak has a peak intensity 0.3 or greater times the peak intensity of the TO peak.4. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the absolute amount of shift of the LO peak from 972 cmis 4 cmor more.5. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 4 , wherein the amount of shift of the LO peak from 972 cmis 4 cmor more.6. The seed material for liquid phase epitaxial growth of a ...

FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A feed material for epitaxial growth of a monocrystalline silicon carbide , the feed material being used in a method for epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.2. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein a first-order diffraction peak corresponding to the (111) crystal plane is a main diffraction peak having the highest diffraction intensity among first-order diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.3. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the diffraction peak other than the diffraction peak corresponding to the (111) crystal plane includes at least one diffraction peak claim 1 , each corresponding to one of a (200) crystal plane claim 1 , a (220) crystal plane claim 1 , and a (311) crystal plane.4. The feed ...

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , whereinupon X-ray diffraction of the surface layer at least one first-order diffraction peak is observed, each first-order diffraction peak corresponding to one of a (111) crystal plane, a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane, andthe average crystallite diameter calculated from the at least one first-order diffraction peak is more than 700 A.3. The seed material for ...

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material. 1. A method of forming polycrystalline SiC material comprising the steps of:(a) positioning bulk carbon at a first location inside of a graphite crucible, wherein the bulk carbon is gas-permeable and vapor-permeable;(b) positioning a mixture comprised of elemental silicon (Si) and elemental carbon (C) at a second location inside of the graphite crucible;(c) following steps (a) and (b), removing adsorbed gas, or moisture, or volatiles or some combination of adsorbed gas, moisture and volatiles from the mixture and the bulk carbon positioned inside of the graphite crucible by heating the mixture and the bulk carbon positioned inside of the enclosed crucible to a first temperature which is below the melting point of the elemental Si;(d) following step (c), forming as-synthesized silicon carbide (SiC) inside of the crucible by heating the mixture positioned inside of the enclosed crucible to a second temperature sufficient to initiate a reaction between the elemental Si and the elemental C of the mixture that forms the as-synthesized SiC inside of the crucible ...

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component. 1. A crystal growth method comprising:(a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed inside of a furnace chamber, the growth crucible disposed inside of a furnace chamber defining a growth ambient; and(b) sublimation growing a SiC single crystal on the SiC seed crystal via precipitation of sublimated SiC source material on the SiC seed crystal in the presence of a reactive atmosphere in the growth ambient that removes donor and/or acceptor background impurities from the growth ambient.2. The method of claim 1 , wherein the reactive atmosphere includes a halide vapor compound and one or more gases.3. The method of claim 2 , wherein:the halide vapor compound is comprised of (1) fluorine or chlorine, and (2) tantalum or niobium; andthe one or more gases includes argon, hydrogen, or a mixture of argon+hydrogen.4. The method of claim 2 , further including:(c) following step (b), changing the atmosphere in the growth ambient to a non-reactive atmosphere; and(d) following step (c), introducing ...

Method for producing silicon carbide crystal

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.

Silicon carbide crystal and method of manufacturing silicon carbide crystal

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S×100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less. 1. A method for producing an SiC single crystal , having the following constitution:(a) the method for producing an SiC single crystal repeats an a-plane growth step n (n≧2) times;(b) a first a-plane growth step is a step for carrying out the a-plane growth of an SiC single crystal on a first growth plane by using a first seed crystal having the first growth plane with an offset angle from the {0001} plane of 80° to 100°;(c) a k-th a-plane growth step (2≦k≦n) is a step for cutting out a k-th seed crystal having a k-th growth plane with a growth direction 45° to 135° different from the growth direction of a (k−1)-th a-plane growth step and an offset angle from the {0001} plane of 80° to 100° from a (k−1)-th grown crystal obtained in the (k−1)-th a-plane growth step, and carrying out the a-plane growth of an SiC single crystal on the k-th growth plane; and{'sub': 'facet', 'claim-text': {'br': None, 'i': S', 'S', '/S, 'sub': facet', '1', '2, '(%)=×100\u2003\u2003(A)'}, '(d) the k-th a-plane growth step (1≦k≦n) is a step for carrying out the a-plane growth of an SiC single crystal on the k-th growth plane so that an area ratio Sof a Si-plane side facet region represented by the equation (A) is maintained at 20% or less{'sub': 1', '2, 'where Sis the sum of the total area of areas obtained by projecting polar plane steps of Si-plane side on the k-th growth plane and the total area of areas obtained by projecting {1-100} plane facets sandwiched between the polar plane steps of Si-plane side on the k-th growth plane, and Sis the total area of the k-th growth plane.'}2. The method for producing an SiC single crystal according to claim 1 ,{'sub': '1', 'wherein the ...

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

A crucible has a bottom and a cylindrical side surface. In the crucible, a source material is sublimated to grow a single crystal. The crucible includes a third region configured to receive a source material, a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom. The crucible includes a first wall and a second wall inside the side surface. The first wall surrounds the first region, the second wall surrounds the second region. The crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface. The distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom. 1. A crucible for sublimating a source material to grow a single crystal , comprising:a bottom; anda cylindrical side surface,wherein the crucible includes a third region configured to receive the source materiala second region extending from the third region in a direction away from the bottom, anda first region extending from the second region in a direction away from the bottom,the crucible includes a first wall and a second wall inside the side surface, the first wall surrounding the first region, the second wall surrounding the second region,the crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface,a distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom, and a distance between horizontal opposite portions on the second wall increases as the horizontal opposite portions approach the bottom,an inclination angle α of the first wall with respect to a direction perpendicular to the bottom is smaller than an inclination angle β of the second wall with ...

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0. 1. An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth , comprising:a quartz vacuum chamber;a cylindrical RF induction coil positioned coaxially with the quartz vacuum chamber;an RF power supply coupled to the RF induction coil;a reaction cell configured for containing a seed crystal and source material, the reaction cell defining an axial length measured as the reaction cell height along its axis of rotational symmetry;an arrangement of insulation layers around the cell configured for generating a thermal gradient inside the reaction cell;a support for placing the reaction cell inside the quartz vacuum chamber;wherein the RF induction coil is configured for generating a uniform electromagnetic field around the reaction cell when the reaction cell is positioned co-axially with the induction coil, coaxially to the quartz vacuum chamber, and near or at the center of the coil with respect to its axial length; and,wherein a ratio of height of the RE induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.5 to 4.0.2. (canceled)3. The apparatus of ...

Device and Method for Producing Silicon Carbide

The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre. 1. Device for continuously producing crystalline silicon carbide , comprising:a reactor; anda collection container at least partially spatially separated from the reactor, whereinthe reactor comprises a supply means for supplying a precursor mixture,a substrate for depositing crystalline silicon carbide is provided,{'sub': 1', '2', '1, 'a reaction chamber of the reactor can be tempered to a first temperature Tand the substrate can be tempered to a second temperature Twhich is different from the first temperature T, wherein the reactor can be heated to a temperature in a range of ≧1400° C. to ≦2000° C., and wherein the temperature of the substrate can be reduced by a temperature in a range of ≧50° C. to ≦100° C. compared to the temperature basically set in the reactor within the aforementioned range of ≧1400° C. to ≦2000° C., wherein'}the substrate for the deposition of crystalline silicon carbide can be disposed at a deposition position within or adjacent to the reaction chamber and at least area-wise be moved from the deposition position to the collection container, and whereina scraper is arranged such that after or during an at least area-wise movement of the substrate to the collection container crystalline silicon carbide deposited on the substrate can be removed by the scraper from the substrate and the removed crystalline silicon carbide can be transferred into the collection container.2. Device according to claim 1 , wherein the substrate is configured as a rotatable disc.3. Device according to claim 1 , wherein the scraper is disposed adjacent to a fall in opening of the collection container such that the crystalline silicon carbide removed from the substrate falls into the collection container.4. Device according to claim 1 , wherein the reactor and the collection container are constructed ...

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

System For Horizontal Growth Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value. 1. A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) , the system comprising:a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside, the reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.2. The system of claim 1 , wherein the angle from horizontal is between −15° and +15 with respect to a horizontal plane perpendicular to the direction of gravity claim 1 , and/or the reactor is horizontally oriented with respect to the gravity direction to accommodate the PVT growth structure.3. The system of claim 1 , wherein the PVT growth structure includes a source material compartment containing a source material and a pair of growth compartments each on a side of the source material compartment claim 1 , a crystal seed is disposed in each growth compartment and is at a certain distance along a longitudinal axis from the source material for growing respective single crystals from the source material claim 1 , the source material is selected for growing single crystals of a semiconductor material from a group including at least silicium carbide claim 1 , 4H-SiC ...

METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C. 1. A method of cleaning a SiC monocrystal growth furnace by using a gas to clean a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C—SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis , the method comprising:flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through an inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, whereinthe mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is at least 200° C. but not more than 500° C.2. The method of cleaning a SiC monocrystal growth furnace according to claim 1 , wherein the inert gas is selected from the group consisting of nitrogen gas claim 1 , argon gas and helium gas.3. The method of cleaning a SiC monocrystal growth furnace according to claim ...

SEMICONDUCTOR LAMINATE

A semiconductor laminate includes a silicon carbide substrate having a first main surface and a second main surface opposite the first main surface, and an epitaxial layer composed of silicon carbide disposed on the first main surface. The second main surface has an average value of roughness Ra of 0.1 μm or more and 1 μm or less with a standard deviation of 25% or less of the average value. 1. A semiconductor laminate comprising:a silicon carbide substrate having a first main surface and a second main surface opposite the first main surface; andan epitaxial layer composed of silicon carbide disposed on the first main surface,wherein the second main surface has an average value of roughness Ra of 0.1 μm or more and 1 μm or less with a standard deviation of 25% or less of the average value.2. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a bow of more than 0 μm and 10 μm or less when the first main surface is placed upward.3. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 75 mm or more.4. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 100 mm or more.5. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 150 mm or more.6. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 200 mm or more.7. The semiconductor laminate according to claim 1 , wherein the silicon carbide substrate and the silicon carbide epitaxial layer each contain an impurity that generates majority carriers claim 1 , anda concentration of the impurity in the silicon carbide substrate is higher than a concentration of the impurity in the epitaxial layer.8. The semiconductor laminate according to claim 2 , wherein the semiconductor laminate has a diameter of 75 mm or more.9. The semiconductor laminate according to claim 2 , wherein the semiconductor ...

SiC FILM STRUCTURE

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. 1. A method of manufacturing a silicon carbide single crystal , comprising the steps of:preparing a crucible having a first side and a second side opposite to said first side;arranging a solid source material for growing silicon carbide with a sublimation method, on said first side in said crucible;arranging a seed crystal made of silicon carbide on said second side in said crucible;arranging said crucible in a heat insulating container, said heat insulating container having an opening facing said second side of said crucible;heating said crucible such that said solid source material sublimes and recrystallizes on said seed crystal; andmeasuring a temperature on said second side of heated said crucible through said opening in said heat insulating container, said opening in said heat insulating container having a tapered inner surface narrowed toward outside of said heat insulating container.2. The method of manufacturing a silicon carbide single crystal according to claim 1 , whereina direction of normal of said tapered inner surface of said opening in said heat insulating container is inclined by not smaller than 120° and not greater than 170°, with respect to a direction from said first side of said crucible to said second side of said crucible.3. The method of manufacturing a silicon ...

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution. 1. A production method of an SiC single crystal by a solution growth process in which a principal surface of a seed crystal is arranged to face downward and brought into contact with an Si—C solution , thereby making an SiC single crystal grow on the principal surface , whereinthe principal surface is flat, andthe production method comprises:a contact step A of bringing a partial region of the principal surface into contact with a stored Si—C solution;a contact step B of leaving a contact region between the principal surface and the stored Si—C solution to expand, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A; anda growth step of making an SiC single crystal grow on the principal surface which is in contact with the stored Si—C solution.2. The production method according to claim 1 , whereinthe contact step A comprises:{'b': '1', 'i': 'a', 'a step A-of bringing the principal surface into contact with the stored Si—C solution, and thereafter detaching the principal surface from the stored Si—C solution, thereby leading to a state in which the Si—C solution adheres to a partial region of the principal surface; and'}{'b': '1', 'i': 'b', 'a step A-of bringing the Si—C solution having ...

Sic single crystal and method for producing same

A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.

MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STRUCTURE

A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided. 1. A manufacturing method of a silicon carbide wafer , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor; 'passing an argon gas into the reactor, wherein a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours;', 'reducing a nitrogen content in the reactor, comprisingheating the reactor and the raw material to form a silicon carbide material on the seed;cooling the reactor and the raw material to obtain a silicon carbide ingot; andcutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.2. The manufacturing method as described in claim 1 , wherein reducing the nitrogen content in the reactor comprises: before passing the argon gas into the reactor claim 1 , performing a first vacuum process on the reactor claim 1 , such that an air pressure in the reactor is 0.1 torr to 100 torr.3. The manufacturing method as described in claim 1 , wherein a resistivity of the silicon carbide ingot is 0.1 ohm/cm to 10 ohms/cm claim 1 , and a resistivity of each of the silicon carbide wafers is 0.1 ohm/cm to 10 ohms/cm.4. The ...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer. 1. A silicon carbide wafer , wherein in the silicon carbide wafer , a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1 , and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.2. The silicon carbide wafer according to claim 1 , wherein in the silicon carbide wafer claim 1 , the nitrogen concentration is within a range of 10atom/cmto 9.9*10atom/cm claim 1 , and the vanadium concentration is within a range of 10atom/cmto 9*10atom/cm.3. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 10atom/cmto 5*10atom/cm claim 2 , and the vanadium concentration is within a range of 10atom/cmto 3.5*10atom/cm.4. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 5*10atom/cmto 7*10atom/cm claim 2 , and the vanadium concentration is within a range of 3.5*10atom/cmto 5*10atom/cm.5. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 4.5:1 to 10:1 claim 1 , and the portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 90% of the entire wafer area of the silicon carbide wafer.6. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 7:1 to 10:1 claim 1 ...

High Purity SiOC and SiC, Methods Compositions and Applications

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. 136-. (canceled)37. A method of making an article comprising ultra pure silicon carbide , the method comprising:a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;b. curing the combination of the first and second liquids to provide a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.999%; and,d. forming a single crystal SiC structure, comprising a polytype selected from the group consisting of 4H SiC, 6H SiC and 3C SiC, by vapor deposition of the ultra pure polymer derived SiC; wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%.38. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 4H SiC.39. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 6H SiC.40. The method of claim 37 , wherein the single crystal SiC structure consists of 4H SiC.41. The method of claim 37 , wherein the single crystal SiC structure consists of 6H SiC.42. The method of claim 37 , wherein the combination of the first and the second liquids is a polysilocarb precursor formulation having a molar ratio of about 30% to 85% carbon claim 37 , about 5% to 40% oxygen claim 37 , and about 5% to 35% silicon.43. The method of claim 37 , wherein the single crystal SiC structure is a boule.44. The method of claim 37 , wherein the single crystal SiC is a layer.45. The method of claim 37 , wherein the single ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view. 13-. (canceled)4. A method for manufacturing a silicon carbide single crystal in which a growth container is surrounded by a heat-insulating material with a hole for temperature measurement provided in a top portion thereof , a seed crystal substrate is disposed at a center of an upper portion inside the growth container , a silicon carbide raw material is disposed at a lower portion of the growth container , and the silicon carbide raw material is sublimated to grow a silicon carbide single crystal on the seed crystal substrate , whereinto allow a position of a center of the hole for temperature measurement in the heat-insulating material to deviate from a position of a center of the seed crystal substrate disposed inside the growth container, the hole for temperature measurement is provided to deviate to a position on a periphery side relative to the center of the seed crystal substrate disposed inside the growth container,a silicon carbide single crystal substrate having a main surface tilted by an off angle from a {0001} plane which is a basal plane is used as the seed ...

SILICON CARBIDE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved. 1. A silicon carbide epitaxial growth device comprising:a wafer holder on which a silicon carbide substrate is mounted;a turntable on which the wafer holder is mounted;a susceptor covering the silicon carbide substrate and the wafer holder, and into which a growth gas, a doping gas, and a carrier gas are supplied;induction heating coils provided around the susceptor, anda tantalum carbide member mounted on a peripheral edge portion in an upper portion of the wafer holder and outside of the silicon carbide substrate.2. The silicon carbide epitaxial growth device according to claim 1 , whereinthe tantalum carbide member includes a tantalum carbide layer as a surface layer thereof which is formed from a carbon material, the tantalum carbide member being replaceable.3. The silicon carbide epitaxial growth device according to claim 1 , whereinthe tantalum carbide member has a shape extending along an outer peripheral of the wafer holder which is on outside of the silicon carbide substrate.4. The silicon carbide epitaxial growth device according to claim 1 , whereinthe wafer holder has a step shape at a peripheral edge portion thereof and the tantalum carbide member is mounted at a step of the peripheral edge portion of the wafer holder.5. A method of manufacturing a silicon carbide epitaxial wafer comprising:carrying a wafer holder loaded with a silicon carbide substrate and a ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>. 1 a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container; and', 'a convex-shaped end face of a grown ingot as a crystal growth surface, and, 'a substrate used as the seed crystal substrate comprisesa diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container.. A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate, wherein The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those using semiconductor Si crystal.As a typical and practical method for growing a crystal with a high melting point or a crystal that is difficult to grow by liquid phase growth such as SiC ...

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER

Provided is a method for producing high-purity SiC single crystal, which is applicable to a process of growing SiC single crystal through a solution growth method. This method is for producing SiC single crystal and includes growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of SiC, wherein the SiC single crystal is grown so that impurity concentrations therein measured by secondary ion mass spectrometry are very small. Also provided is a housing container for growing SiC single crystal through a solution growth method using a Si melt, including a feed material that is disposed on at least a surface of the housing container and adds, to the Si melt, an additional material that is SiC and/or C. Performing the solution growth method using this housing container can produce high-purity SiC single crystal without any special treatment. 1. A method for producing silicon carbide single crystal , comprising:growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of silicon carbide, whereinthe epitaxial layer is grown to yield silicon carbide single crystal whose impurity concentrations measured by secondary ion mass spectrometry satisfy the following conditions:{'sup': 16', '3, '4.00×10or less (atoms/cm) of aluminum;'}{'sup': 14', '3, '3.00×10or less (atoms/cm) of titanium;'}{'sup': 15', '3, '7.00×10or less (atoms/cm) of chromium; and'}{'sup': 15', '3, '1.00×10or less (atoms/cm) of iron.'}2. The method according to claim 1 , whereinthe impurity concentrations in the silicon carbide single crystal further satisfy the following conditions:{'sup': 13', '3, '2.00×10or less (atoms/cm) of sodium;'}{'sup': 14', '3, '1.00×10or less (atoms/cm) of phosphorus;'}{'sup': 14', '3, '1.00×10or less (atoms/cm) of calcium;'}{'sup': 12', '3, '1.00×10or less (atoms/cm) of vanadium;'}{'sup': 14', '3, '5.00×10or less (atoms/cm) of nickel; and'}{'sup': 14', '3, '2.00× ...

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T. 1. A method of manufacturing a silicon carbide epitaxial wafer , comprising:{'sub': '2', 'etching a surface of a silicon carbide substrate at a first temperature using etching gas including H;'}{'sub': '2', 'flattening the surface etched by the etching, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and'}performing an epitaxial growth on the surface flattened by the flattening, at a third temperature using gas including second Si supply gas and second C supply gas, wherein{'sub': 1', '2', '3', '1', '2', '3, 'the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T,'}2. The method of manufacturing the silicon carbide epitaxial wafer according to claim 1 , whereinthe first Si supply gas and the second Si supply gas are identical Si supply gas, andthe first C supply gas and the second C supply gas are identical C supply gas.3. The method of manufacturing the silicon carbide epitaxial wafer according to claim 2 , wherein{'sub': 4', '3', '8, 'the first Si supply gas is SiHgas, and the first C supply gas CHgas.'}4. The method of manufacturing the silicon ...

Silicon Based Fusion Composition and Manufacturing Method of Silicon Carbide Single Crystal Using the Same

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): 1. A silicon fusion composition for a solution growth method for forming a silicon carbide single crystal , comprising:silicon, a first metal (M1), scandium (Sc) and aluminum (Al), [{'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1., 'as represented by the following Formula 12. The silicon fusion composition of claim 1 , wherein:the first metal (M1) is one or more selected from the group consisting of titanium (Ti), chromium (Cr), vanadium (V), yttrium (Y), manganese (Mn), iron (Fe), cobalt (Co), boron (B), cerium (Ce), lanthanum (La) and praseodymium (Pr).3. The silicon fusion composition of claim 1 , wherein:in Formula 1, a is more than 0.5 and less than 0.7, b is more than 0.2 and less than 0.4, and d is more than 0.01 and less than 0.05.4. The silicon fusion composition of claim 1 , wherein:the silicon fusion composition has a carbon solubility of 5% or more.5. A silicon fused solution claim 1 , comprising: the silicon fusion composition of and carbon claim 1 , wherein the scandium increases a carbon solubility in the silicon fused solution.6. A manufacturing method of a silicon carbide single crystal comprising:preparing a silicon carbide seed crystal; {'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'preparing a silicon fusion composition comprising: silicon (Si), a first metal (M1), scandium (Sc) and aluminum (Al), as represented by the following Formula 1;'}wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6 m c us nire than 0.01 and less than 0.1, and d is ...

Method for evaluating quality of sic single crystal body and method for producing silicon carbide single crystal ingot using the same

A method for evaluating the quality of a SiC single crystal by a non-destructive and simple method; and a method for producing a SiC single crystal ingot with less dislocation and high quality with good reproducibility utilizing the same. The method for evaluating the quality of a SiC single crystal body is based on the graph of a second polynomial equation obtained by differentiating a first polynomial equation, the first polynomial equation approximating the relation between a peak shift value and a position of the measurement point and the peak shift value being obtained by an X-ray rocking curve measurement. The method for producing a SiC single crystal ingot manufactures a SiC single crystal ingot by a sublimation recrystallization method using, as a seed crystal, the SiC single crystal body evaluated by the evaluation method.

SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL

The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft. 1. A seed crystal holding shaft to be used in a single crystal production device employed in a solution process , whereinat least a portion of the side face of the seed crystal holding shaft is covered with a reflector member having higher reflectance than the reflectance of the seed crystal holding shaft, andthe reflector member is disposed so as to leave a gap between the reflector member and the seed crystal held on the end face of the seed crystal holding shaft.2. The seed crystal holding shaft according to claim 1 , wherein at least 50% of the side face of the seed crystal holding shaft is covered by the reflector member.3. The seed crystal holding shaft according to claim 1 , wherein the reflectance of the reflector member is 0.4 or greater.4. The seed crystal holding shaft according to claim 1 , wherein the reflector member is a carbon sheet.5. The seed crystal holding shaft according to claim 4 , wherein the average thickness of the carbon sheet is 0.05 mm or greater.6. The seed crystal holding shaft according to claim 1 , wherein the seed crystal holding shaft is made of graphite.7. A method for producing a SiC single crystal by a solution process in which a SiC seed crystal held on a ...

SILICON CARBIDE CRYSTAL GROWTH IN A CVD REACTOR USING CHLORINATED CHEMISTRY

A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method. 1. A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber , wherein the reaction chamber is heated to a temperature in the region 1600° C. to 2000° C. , the method comprising:entering process gases into the reaction chamber by use of at least three gas flows, a primary gas flow, a secondary gas flow surrounding the primary gas flow, and a shower gas flow, wherein said primary and secondary gas flows stream substantially parallel to the surface of the substrate, and where the shower gas flow is fed substantially perpendicularly to the primary and the secondary gas flows and being directed towards the substrate,a chlorine containing silicon precursor gas is entered into the reaction chamber utilizing the primary gas flow together with a carrier gas, and optionally together with an amount of HCl,a hydrocarbon precursor gas is entered into the reaction chamber according to one of the following alternatives:together with the chlorine containing silicon precursor gas and a small flow ratio x of hydrogen in the primary flow,together with a flow ratio y of hydrogen, and ...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide epitaxial substrate includes: a silicon carbide single crystal substrate; a first silicon carbide layer on the silicon carbide single crystal substrate, the first silicon carbide layer having a first concentration of carriers; and a second silicon carbide layer on the first silicon carbide layer, the second silicon carbide layer having a second concentration of carriers. A transition region in which the concentration of the carriers is changed between the first concentration and the second concentration has a width of less than or equal to 1 μm. A ratio of a standard deviation of the second concentration to an average value of the second concentration is less than or equal to 5%, the ratio being defined as uniformity of the second concentration in a central region. The central region has an arithmetic mean roughness of less than or equal to 0.5 nm. 1. A silicon carbide epitaxial substrate comprising:a silicon carbide single crystal substrate having a first main surface;a first silicon carbide layer on the silicon carbide single crystal substrate, the first silicon carbide layer having a first concentration of carriers; anda second silicon carbide layer on the first silicon carbide layer, the second silicon carbide layer having a second concentration of carriers smaller than the first concentration, the second silicon carbide layer including a second main surface opposite to the first main surface,in a concentration profile of the carriers along a layering direction in which the first silicon carbide layer and the second silicon carbide layer are layered, a transition region in which the concentration of the carriers is changed between the first concentration and the second concentration having a width of less than or equal to 1 μm,a ratio of a standard deviation of the second concentration to an average value of the second concentration being less than or equal to 5%, the ratio being defined as uniformity of the second concentration in a central ...

SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm. 1. A silicon carbide substrate comprising:a substrate inner portion; anda substrate outer portion surrounding the substrate inner portion, wherein{'sup': 16', '−3, 'a non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and'}{'sup': 16', '−3, 'a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm.'}2. The silicon carbide substrate according to claim 1 , wherein{'sup': '31 2', 'average threading screw dislocation density in the substrate surface region is 100 cmor less.'}3. The silicon carbide substrate according to claim 1 , whereinthe non-dopant metal impurity concentration has distribution in a thickness direction of the substrate inner portion or a direction perpendicular to the thickness direction.4. The silicon carbide substrate according to claim 1 , whereinthe non-dopant metal impurity concentration has distribution in a thickness direction of the substrate surface region or a direction perpendicular to the thickness direction.5. The silicon carbide substrate according to claim 1 , whereinan impurity concentration of the substrate inner portion is set so that the substrate inner portion has a ...

Thermal conductivity estimation method, thermal conductivity estimation apparatus, production method for semiconductor crystal product, thermal conductivity calculator, thermal conductivity calculation program, and, thermal conductivity calculation method

A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the regression model.

METHOD FOR PRODUCING CRYSTAL

A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step. 1. A method for producing a crystal of silicon carbide , the method comprising:a preparation step of preparing a solution in which carbon is dissolved in a silicon solvent, and preparing a seed crystal of silicon carbide;a contact step of bringing a lower surface of the seed crystal into contact with the solution;a start step of starting to grow a crystal from the lower surface of the seed crystal by heating the solution to a temperature in a first temperature range;a first growth step of growing the crystal after the start step by pulling up the seed crystal upward while the solution is heated from the temperature in the first temperature range to a temperature in a second temperature range;a cooling step of cooling the solution from the temperature in the second temperature range to any one of the temperatures in the first temperature range; anda second growth step of further growing the crystal after the cooling step by pulling up the seed crystal upward while the solution is heated from the temperature in the first temperature range to any one of the temperatures in the second temperature range.2. The method according to claim 1 , whereinthe cooling step and the second growth step are each repeated.3. The method according to claim 1 , whereinthe crystal is detached from the solution in the cooling step.4. The method according to claim 1 , whereinthe solution is cooled in the cooling step keeping the crystal in contact with the solution.5. The method according to claim 1 , whereina silicon raw material is added to the solution in the cooling step.6. The method according to claim 1 , whereinthe solution is heated in the first growth step to a temperature in the second temperature range from a temperature in the first temperature range keeping a degree of supersaturation of carbon in the ...

SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer. 1. An SiC epitaxial wafer comprising an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane ,wherein a trapezoidal defect included in the SiC epitaxial wafer comprises an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow.2. The SiC epitaxial wafer according to claim 1 , wherein a ratio of the inverted trapezoidal defect in the trapezoidal defect is 50% or more.3. The SiC epitaxial wafer according to claim 1 , wherein the inverted trapezoidal defect comprises an inverted trapezoidal defect having a length of the lower base on the downstream side of the step flow of 0 and a triangular shape.4. A method for manufacturing an SiC epitaxial wafer which is a method for manufacturing the SiC epitaxial wafer according to claim 1 , the method comprising:an etching step for etching an SiC single crystal substrate; andan epitaxial growth step for growing an epitaxial layer on the SiC single crystal substrate after etching,wherein in the epitaxial growth step, a concentration ratio C/Si of a Si-based source gas and a C-based source gas is set to 1.0 or less.5. The method for manufacturing an SiC epitaxial wafer according to claim 4 , wherein a temperature in the epitaxial growth step is set to 1 claim 4 ,630° C. or less.6. The method for manufacturing ...

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Provided is an SiC-monocrystal growth crucible that includes, at the interior thereof, a monocrystal installation part and a raw-material installation part, and that serves as a crucible for obtaining an SiC monocrystal by means of sublimation, wherein the gas permeability of a first wall of the crucible, which surrounds at least a portion of a first region positioned closer to the raw-material installation part relative to the monocrystal installation part, is lower than the gas permeability of a second wall of the crucible, which surrounds at least a portion of a second region positioned on the opposite side from the raw-material installation part relative to the monocrystal installation part. 1. A crucible for growing a SiC single crystal which is a crucible for obtaining a SiC single crystal by a sublimation method ,the crucible comprising, in an interior thereof:a single crystal setting section; anda raw material setting section,wherein a gas permeability of a first wall of said crucible surrounding at least a part of a first region located on said raw material setting section side with reference to said single crystal setting section is lower than a gas permeability of a second wall of said crucible surrounding at least a part of a second region located on an opposite side of said raw material setting section with reference to said single crystal setting section.2. The crucible for growing a SiC single crystal according to claim 1 , wherein a gas permeability of said first wall is 90% or less of a gas permeability of said second wall.3. The crucible for growing a SiC single crystal according to either claim 1 , wherein a part of said first wall comprises a gas shielding member.4. The crucible for growing a SiC single crystal according to claim 3 , wherein said gas shielding member is provided inside or on an outer periphery of said first wall.5. The crucible for growing a SiC single crystal according to either claim 3 , wherein said gas shielding member is any ...

MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide substrate () is positioned such that a principal surface of the silicon carbide substrate () is parallel to a plurality of injection holes () of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes () to epitaxially grow a silicon carbide epitaxial growth layer () on the principal surface of the silicon carbide substrate (). The source gas fed from the plurality of injection holes () is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate () is greater than 1 m/sec. 1. A manufacturing method for a silicon carbide epitaxial wafer comprising:positioning a silicon carbide substrate such that a principal surface of the silicon carbide substrate is parallel to a plurality of injection holes of a horizontal CVD apparatus arranged in a row; andan epitaxial growth step of feeding source gas and carrier gas from the plurality of injection holes to epitaxially grow a silicon carbide epitaxial growth layer on the principal surface of the silicon carbide substrate,wherein the source gas and the carrier gas fed from the plurality of injection holes is divided into a plurality of system lines and controlled individually by separate mass flow controllers,the plurality of system lines includes a first system line and a second system line,a total flow rate of the source gas fed from one of the injection holes connected to the first system line is different from a total flow rate of the source gas fed from one of the injection holes connected to the second system line,flow rates of the source gas and the carrier gas are adjusted in accordance with a number of the injection holes for each of the system lines so that the flow rates of the source gas and the carrier gas fed from the plurality of injection holes in the epitaxial growth step is uniform, anda flow rate of the source gas ...

Seed crystal holder, crystal growing device, and crystal growing method

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal substrate has a first main surface. The silicon carbide layer is on the first main surface. The silicon carbide layer includes a second main surface opposite to a surface thereof in contact with the silicon carbide single crystal substrate. The second main surface has a maximum diameter of more than or equal to 100 mm. The second main surface includes an outer peripheral region which is within 3 mm from an outer edge of the second main surface, and a central region surrounded by the outer peripheral region. The central region has a haze of less than or equal to 75 ppm.

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER, SIC DEVICE, AND POWER CONVERSION APPARATUS

A SiC substrate () has an off angle θ°. A SiC epitaxial layer () having a film thickness of Tm μm is provided on the SiC substrate (). Triangular defects () are formed on a surface of the SiC epitaxial layer (). A density of triangular defects () having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular () defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied. 1. A SiC epitaxial wafer comprising:a SiC substrate having an off angle θ°; anda SiC epitaxial layer provided on the SiC substrate and having a film thickness of Tm μm,wherein triangular defects are formed on a surface of the SiC epitaxial layer,a density of triangular defects having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A,a density of triangular defects having a length shorter than Tm/Tan θ×0.9 in the substrate off direction is denoted by B, andB/A≤0.5 is satisfied.2. The SiC epitaxial wafer according to claim 1 , wherein the density B of the triangular defects is 0.5/cmor less.3. The SiC epitaxial wafer according to claim 1 , wherein the film thickness Tm of the SiC epitaxial layer is 30 μm or more.4. The SiC epitaxial wafer according to claim 1 , wherein a density of triangular defects shorter than Tm/Tan θ×0.5 is denoted by C claim 1 , and C/A≤0.2 is satisfied.5. The SiC epitaxial wafer according to claim 1 , wherein the SiC epitaxial layer includes two or more layers.6. A method for manufacturing the SiC epitaxial wafer according to claim 1 , comprising:placing the SiC substrate on a wafer holder and accommodating the SiC substrate placed on the wafer holder in a susceptor; andsupplying a source gas to grow the SiC epitaxial layer on the SiC substrate.7. The method for manufacturing the SiC epitaxial wafer according to claim 6 , wherein a temperature of the susceptor at a portion directly above the SiC substrate is higher than a temperature of the ...

SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS

Implementations of a method of separating a wafer from a boule including semiconductor material may include: creating a damage layer in a boule comprising semiconductor material. The boule may have a first end and a second end. The method may include cooling the first end of the boule and heating the second end of the boule. A thermal gradient may be formed between the cooled first end and the heated second end. The thermal gradient may assist a silicon carbide wafer to separate from the boule at the damage layer. 1. A method of separating a wafer from a boule comprising a semiconductor material , the method comprising:creating a damage layer in a boule comprising semiconductor material, wherein the boule has a first end and a second end; andcooling the first end of the boule;wherein a thermal gradient between the first end and the second end assists a silicon carbide wafer to separate from the boule at the damage layer.2. The method of claim 1 , wherein the damage layer is created through laser irradiation.3. The method of claim 1 , further comprising heating the second end of the boule.4. The method of claim 3 , wherein heating the second end of the boule comprises applying pulses of heat using a heating chuck.5. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.6. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.7. The method of claim 3 , further comprising placing the second side of the boule on a heating chuck and one of peeling claim 3 , prying claim 3 , and twisting the first end of the boule with a grip while applying heat to the second side of the boule.8. A method of separating a wafer from a boule of silicon carbide claim 3 , the method comprising:creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;applying a ...

SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER

In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density. 1. A SiC wafer , whereina difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.2. The SiC wafer according to claim 1 ,wherein the numbers of the threading dislocations of the first surface and the second surface are substantially the same.3. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein a density of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface is 1.5 threading dislocations/mmor less.'}4. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein the difference between the threading dislocation density exposed on the first surface and the threading dislocation density exposed on the second surface is 0.02 threading dislocations/mmor less.'}5. A manufacturing method of a SiC wafer claim 1 , comprising:{'sup': '2', 'a preparation step of producing a seed crystal ...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME

Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same. 1. A silicon carbide single crystal substrate cut from a bulk silicon carbide single crystal grown by a physical vapor transport method , wherein an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is one-half of the substrate is not more than 80% of an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is the other one-half of the substrate.2. The silicon carbide single crystal substrate according to claim 1 , wherein the substrate has a main surface having an angle θof more than 0° and not more than 12° claim 1 , the angle θbeing formed by the normal penetrating center point O of the substrate and the [0001] direction; when two semicircular regions bounded by a diameter Rof the substrate are defined claim 1 , the diameter Rbeing perpendicular to ...

DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE

A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 5 cm −2 . Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD

A pedestal of the present invention is a pedestal for a seed for crystal growth, in which one main surface to which the seed adheres is flat, and the pedestal has a gas-permeable region which a thickness from the one main surface that is formed to be locally thin. 1. A pedestal supporting a seed for crystal growth , wherein one main surface to which the seed adheres is flat , and wherein the pedestal has a gas-permeable region which a thickness from the one main surface is formed to be locally thin.2. The pedestal according to claim 1 , wherein a thickness of the gas-permeable region is 1 mm or more and less than 5 mm.3. The pedestal according to claim 1 , wherein the thickness of the gas-permeable region increases as a position separates from a center of the gas-permeable region along to one main surface.4. The pedestal according to claim 1 , wherein the region other than the gas-permeable region includes a part having a thickness of 10 mm or more.5. The pedestal according to claim 1 , wherein claim 1 , in plan view from a thickness direction claim 1 , when a distance from the center to an outer circumference is set to r claim 1 , the gas-permeable region is included in the range of the distance r/2 from the center.6. The pedestal according to supporting a seed for crystal growth claim 1 ,wherein the one main surface to which the seed adheres is flat, andwherein the pedestal has a gas-permeable region which is spreading in a depth direction from the one main surface and has a space communicating with the outside and provided on an inner side of the gas-permeable region.7. The pedestal according to claim 6 , wherein the space is formed at a distance of 1 mm or more to less than 5 mm from the one main surface.8. A SiC single crystal manufacturing apparatus claim 6 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the pedestal according to .'}9. A SiC single crystal manufacturing method for manufacturing a SiC single crystal using the pedestal according ...

Unseeded silicon carbide single crystals

High volumes of relatively large, single crystals of silicon carbide are grown in a reactor from a point source, i.e., unseeded growth. The crystals may be grown colorless or near colorless and may be processed for many uses, including use as a diamond substitute for jewelry, as an optical element such as a watch face or a lens, or for other desired end uses.

CHEMICAL MECHANICAL POLISHING CONDITIONER AND METHOD FOR MANUFACTURING SAME

A chemical mechanical polishing (abbreviated as CMP) conditioner comprises a bottom substrate, an intermediate substrate and a diamond film The intermediate substrate is provided on the bottom substrate. The intermediate substrate comprises a hollow portion, an annular portion surrounding the hollow portion, and at least one projecting ring projecting out of the annular portion away from the bottom substrate. The projecting ring comprises a plurality of bumps arranged to be spaced apart from each other along an annulus region. The bumps are extended in a radial direction of the intermediate substrate. The diamond film is provided on the intermediate substrate. The diamond film is allowed for conforming to the bumps, so as to form a plurality of the abrasive projections. 1. A CMP conditioner , comprising:a bottom substrate;an intermediate substrate, provided on said bottom substrate, said intermediate substrate comprising a hollow portion, an annular portion surrounding said hollow portion, and at least one projecting ring projecting out of said annular portion away from said bottom substrate, said projecting ring comprising a plurality of bumps arranged to be spaced apart from each other along an annulus region, said bumps extending in a radial direction of said intermediate substrate; anda diamond film, provided on said intermediate substrate, said diamond film conforming to said bumps, so as to form a plurality of said abrasive projections.2. The CMP conditioner according to claim 1 , wherein said adjacent abrasive projections are spaced apart from each other at an interval claim 1 , said interval being 1 to 5 times with respect to a width of said bump.3. The CMP conditioner according to claim 1 , wherein said projecting ring is presented as an arc with respect to said radial direction of said intermediate substrate.4. The CMP conditioner according to claim 1 , wherein said abrasive projection is provided with a rough top surface.5. The CMP conditioner according ...

METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate. 1. A method for manufacturing SiC crystal to a grown volume , comprising:i. introducing a mixture comprising silicon chips into a reaction cell, the reaction cell being made of graphite and having cylindrical interior of internal volume in the range of from six to twelve times the grown volume of the SiC crystal;ii. placing a silicon carbide seed crystal inside the reaction cell adjacent to a lid of the reaction cell;iii. sealing the cylindrical reaction cell using the lid;iv. surrounding the reaction cell with graphite insulation;v. introducing the cylindrical reaction cell into a vacuum furnace;vi. evacuating the vacuum furnace;vii. filling the vacuum furnace with a gas mixture comprising inert gas to a pressure near atmospheric pressure;viii. heating the cylindrical reaction cell in the vacuum furnace to a temperature in the range from 1975° C. to 2500° C.;ix. reducing the pressure in the vacuum furnace to from 0.05 torr to less than 50 torr;{'sup': 2', '2, 'x. introducing source of carbon gas into the vacuum furnace and flowing nitrogen gas configured to introduce nitrogen donor concentration larger than 3E18/cm, and up to 6E18/cm; and,'}xi. allowing for sublimation of silicon and carbon species ...

METHOD FOR PRODUCING SINGLE CRYSTAL

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}the bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal,in the step of placing the source material powder and the seed crystal within the crucible, the source material ...

MANUFACTURING METHOD OF SILICON CARBIDE INGOT

A manufacturing method of a silicon carbide ingot includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A first surface of the seed faces the raw material. The reactor and the raw material are heated, where part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material. The growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. A diameter of the silicon carbide ingot is greater than a diameter of the seed. 1. A manufacturing method of a silicon carbide ingot , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor, wherein a first surface of the seed faces the raw material;heating the reactor and the raw material, wherein part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material, wherein the growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed; andcooling the reactor and the raw material to obtain the growing body that has completed growth, wherein the growing body that has completed growth is a silicon carbide ingot, and a diameter of the silicon carbide ingot is greater than a diameter of the seed.2. The manufacturing method as described in claim 1 , wherein the diameter of the seed is D1 claim 1 , the diameter of the silicon carbide ingot is D2 claim 1 , and D1:D2 is 1:8 to 7.5:83. The manufacturing ...

SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE

An apparatus for sublimation growth of a doped SiC single crystal includes a growth crucible, an envelope, a heater, and a passage for introducing into the envelope from a source outside the envelope a doping gas mixture. The gas mixture includes a gaseous dopant precursor that, in response to entering a space between the growth crucible and the envelope, undergoes chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products of transformation which penetrate the wall of the crucible, move into the crucible, and absorb on a growth interface of a growing SiC crystal thereby causing doping of the growing crystal. A sublimation growth method is also described. 1. A method of growing a doped silicon carbide (SiC) single crystal by sublimation , comprising:providing SiC source material and a SiC single crystal seed in spaced relation within a growth crucible;holding the growth crucible in an envelope, and providing passages for a gas between an exterior surface of the growth crucible and an interior surface of the envelope;heating the SiC source material to form sublimated material, establishing a temperature gradient between the SiC source material and the SiC single crystal seed, and causing the sublimated material to be transported to and precipitate on the SiC single crystal seed; andusing the passages to introduce into the envelope, from a source outside the envelope, a doping gas mixture including a gaseous dopant precursor, and heating the gaseous dopant precursor, within the passages, to a temperature between 2000° C. and 2400° C., such that the gaseous dopant precursor undergoes a chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products which penetrate the crucible wall, move into the crucible, and absorb on a growth interface of a growing SiC crystal.2. The method of claim 1 , further comprising holding the envelope in a ...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm. 1. A silicon carbide wafer , wherein within a range area of 5 mm from an edge of the silicon carbide wafer , there are no low angle grain boundaries formed by clustering of basal plane dislocation defects , and the silicon carbide wafer has a bowing of less than 15 μm.2. The silicon carbide wafer as claimed in claim 1 , wherein the silicon carbide wafer has a warping of less than 30 μm.3. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 10 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 7% of the range area.4. The silicon carbide wafer as claimed in claim 3 , wherein within the range area of 10 mm from the edge of the silicon carbide wafer claim 3 , there are no low angle grain boundaries formed by the clustering of the basal plane dislocation defects.5. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 15 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 10% of the range area.6. The silicon carbide wafer as claimed in claim 5 , wherein within the range area of 15 mm from the edge of the silicon carbide wafer claim 5 , there are no low angle grain boundaries formed by the clustering of the basal plane dislocation defects.7. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 20 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 30% of the range area.8. The silicon ...

CRYSTAL GROWTH APPARATUS

A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material. 1. A crystal growth apparatus , comprisinga crucible,a heat-insulating material which covers a circumference of the crucible, anda heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, whereinthe heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening of the heat-insulating material.2. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to move symmetrically with the crucible as a center claim 1 , when the apparatus is observed in planar view from a vertical direction of a supporting surface by which the crucible is supported.3. The crystal growth apparatus according claim 1 , wherein the movable part is located below the crucible.4. The crystal growth apparatus according to claim 1 , whereinthe movable part has a first inclined surface which is inclined relative to an operating direction of the movable part, andthe opening ratio is controlled by a distance between the first inclined surface and a second inclined surface which faces the movable part of the heat-insulating material.5. The crystal growth apparatus according to claim 1 , wherein the movable part has an annular shape in plain view.6. The crystal growth apparatus according to claim 1 , whereinthe movable part is configured to move ...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide single crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface includes a central square region and an outer square region. When viewed in a thickness direction, each of the central square region and the outer square region has a side having a length of 15 mm. The first main surface has a maximum diameter of not less than 100 mm. The silicon carbide single crystal substrate has a TTV of not more than 5 μm. A value obtained by dividing a LTIR in the central square region by a LTV in the central square region is not less than 0.8 and not more than 1.2. A value obtained by dividing a LTV in the outer square region by the LTV in the central square region is not less than 1 and not more than 3. 1. A silicon carbide single crystal substrate comprising a first main surface and a second main surface opposite to the first main surface , a central square region surrounded by a square having a center corresponding to an intersection between the first main surface and a straight line that passes through a center of gravity of the silicon carbide single crystal substrate and that is parallel to a thickness direction of the silicon carbide single crystal substrate, and', 'an outer square region surrounded by a square that has a side parallel to a straight line perpendicular to a straight line connecting the intersection to a certain position on an outer edge of the first main surface and that has a center corresponding to a position separated away by 10.5 mm from the certain position toward the intersection,, 'the first main surface including'}when viewed in the thickness direction, each of the central square region and the outer square region having a side having a length of 15 mm,the first main surface having a maximum diameter of not less than 100 mm,the silicon carbide single crystal substrate having a TTV of not more than 5 μm,a value obtained by dividing a LTIR in the central ...

METHOD FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide , comprising: a crucible having an upper region, a lower region, and one or more vent holes,', 'a crucible cover sealing the crucible,', 'a substantially solid silicon carbide precursor contained within a source module that is positioned in the lower region of the crucible, wherein the source module is removable from the crucible,', 'a stand-alone seed module, removable from the crucible, that, when suspended in the upper region of the crucible, forms a space between the crucible cover and an entire top surface of an upper section of a seed holder of the seed module, the seed module having a plurality of vapor release openings and a silicon carbide seed disposed within the seed holder, wherein the plurality of vapor release openings are formed in the seed holder below a bottom surface of the silicon carbide seed as a plurality of holes around a center axis that is perpendicular to the bottom surface of the silicon carbide seed, and', 'a vapor release ring having one or more holes, wherein at least one of the one or more holes of the vapor release ring is aligned with at least one of the one or more vent holes of the crucible;, 'providing a sublimation furnace comprising a furnace shell, at least one heating element positioned ...

Method for producing a single-crystal film of aln material and substrate for the epitaxial growth of a single-crystal film of aln material

A process for producing a monocrystalline layer of AlN material comprises the transfer of a monocrystalline seed layer of SiC- 6 H material to a carrier substrate of silicon material, followed by the epitaxial growth of the monocrystalline layer of AlN material.

SEMICONDUCTOR SUBSTRATE MADE OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SAME

In a semiconductor substrate having a silicon carbide substrate and an epitaxial film, a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentration in the epitaxial film is in a range between 0.2 and 5, preferably in a range between 0.5 and 2. Thus, hydrogen diffusion at a boundary position between the epitaxial film and the SiC substrate is restricted. Further, it is possible to prepare the semiconductor substrate for restricting the reduction of the hydrogen concentration. Thus, it is possible to improve the properties of the SiC semiconductor device using the semiconductor substrate, for example, the bipolar device such as a PN diode. 1. A semiconductor substrate comprising:a silicon carbide substrate made of silicon carbide single crystal and including hydrogen; andan epitaxial film arranged on the silicon carbide substrate and including hydrogen, wherein:a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentration in the epitaxial film is in a range between 0.2 and 5.2. The semiconductor substrate according to claim 1 , wherein:the concentration ratio between the hydrogen concentration in the silicon carbide substrate and the hydrogen concentration in the epitaxial film is in a range between 0.5 and 2.3. The semiconductor substrate according to claim 1 , wherein:{'sup': 18', '−3', '19', '−3, 'the hydrogen concentration in the silicon carbide substrate is in a range between 2×10cmand 5×10cm.'}4. A manufacturing method of a semiconductor substrate comprising:forming a silicon carbide substrate made of silicon carbide single crystal by forming the silicon carbide single crystal including hydrogen using a gaseous growth method for synthesizing silicon carbide from silicon including gas and carbon including gas with hydrogen gas as a carrier gas; andforming an epitaxial film including hydrogen on the silicon carbide substrate using the hydrogen gas as a ...

METHOD FOR PRODUCING SINGLE CRYSTAL

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible; and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part. In the step of growing the single crystal on the seed crystal, the crucible is disposed on a spacer so as to form a space starting directly below an outer surface of the bottom part, and the peripheral wall part and an auxiliary heating member that is placed so as to face the outer surface of the bottom part with the space therebetween are heated by induction heating to sublime the source material powder to cause recrystallization on the seed crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}in the step of placing the source material powder and the seed crystal within the crucible, the source material powder is placed so as to be in contact with an inner surface of the bottom part and the seed crystal is placed so as to be held by the holder, andin the step of growing the single crystal on the seed crystal, the crucible is disposed on a spacer so as to form a space starting directly below an outer surface of the bottom part, and the peripheral wall part and an auxiliary heating member that is placed so as to face the outer surface of the bottom part with the space ...

Silicon Carbide Epitaxial Wafer and Process for Producing Same

A subject of present invention is to enable reducing, even in growth at a high C/Si ratio, contamination by different polytypes with respect to a silicon carbide epitaxial wafer having a low off-angle, and to provide the silicon carbide epitaxial wafer which enables forming a reliable high voltage silicon carbide semiconductor element. The silicon carbide epitaxial wafer of the present invention is a silicon carbide epitaxial wafer comprising an epitaxially grown layer disposed on a silicon carbide substrate having an α-type crystal structure and an off-angle tilted at an angle of more than 0° and less than 4° from a (0001) Si plane or a (000-1) C plane, wherein a region of a step bunching including five to ten bunched steps of 1 nm in height occupies 90% or more of the surface of the silicon carbide substrate.

Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer

A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E−4 [J] or higher is introduced into the growth furnace.

Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate

A silicon carbide semiconductor substrate includes an epitaxial layer. A difference of a donor concentration and an acceptor concentration of the epitaxial layer is within a range from 1×10 14 /cm 3 to 1×10 15 /cm 3 . Further, the donor concentration and the acceptor concentration of the epitaxial layer are a concentration unaffected by an impurity inside epitaxial growth equipment.

SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY

Embodiments relate to fabricating a wafer including a thin, high-quality single crystal GaN layer serving as a template for formation of additional GaN material. A bulk ingot of GaN material is subjected to implantation to form a subsurface cleave region. The implanted bulk material is bonded to a substrate having lattice and/or Coefficient of Thermal Expansion (CTE) properties compatible with GaN. Examples of such substrate materials can include but are not limited to AlN and Mullite. The GaN seed layer is transferred by a controlled cleaving process from the implanted bulk material to the substrate surface. The resulting combination of the substrate and the GaN seed layer, can form a template for subsequent growth of overlying high quality GaN. Growth of high-quality GaN can take place utilizing techniques such as Liquid Phase Epitaxy (LPE) or gas phase epitaxy, e.g., Metallo-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE). 1. A method comprising:providing a substrate bearing a bonding layer;transferring a layer of additional material to the bonding layer utilizing a first cleave process; andforming GaN over the layer of additional material.2. A method as in further comprising forming a precursor layer over the layer of additional material.3. A method as in further comprising depositing a GaN seed layer on the precursor layer prior to performing an epitaxial growth technique.4. A method as in wherein the depositing comprises performing Metallo-Organic Chemical Vapor Deposition (MOCVD).5. A method as in wherein the precursor layer comprises AlN.6. A method as in wherein the AlN comprises single-crystal AlN.7. A method as in wherein forming the GaN comprises performing an epitaxial growth technique.8. A method as in wherein the epitaxial growth technique comprises Liquid Phase Epitaxy (LPE).9. A method as in wherein the epitaxial growth technique comprises Hydride Vapor Phase Epitaxy (HVPE).10. A method as in wherein the additional ...

DEVICES AND METHODS FOR GROWING CRYSTALS

The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth. 1. A device for preparing a crystal , comprising:a growth chamber configured to execute a crystal growth; anda temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth.26-. (canceled)7. The device of claim 1 , wherein the temperature control system causes that the radial temperature difference in the growth chamber does not exceed the first preset range of the average temperature in the growth chamber at least during a crystal growth sub-interval of the crystal growth claim 1 , wherein the crystal growth sub-interval is a first 80% time period of a crystal growth interval of the crystal growth.8. The device of claim 1 , wherein the temperature control system causes that a radial temperature gradient in the growth chamber does not exceed a preset radial temperature gradient threshold during the crystal growth.913-. (canceled)14. The device of claim 1 , wherein the temperature control system causes that an axial temperature gradient in the growth chamber maintains stable during the crystal ...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration. 1. A silicon carbide epitaxial substrate comprising:a silicon carbide single-crystal substrate of one conductivity type having first impurity concentration;a first silicon carbide layer of the one conductivity type being provided on the silicon carbide single-crystal substrate, and having second impurity concentration that is lower than the first impurity concentration;a second silicon carbide layer of the one conductivity type being provided on the first silicon carbide layer, and having third impurity concentration that is higher than the first impurity concentration; anda third silicon carbide layer of the one conductivity type being provided on the second silicon carbide layer, and having fourth impurity concentration that is lower than the second impurity concentration.2. The silicon carbide epitaxial substrate according to claim 1 , wherein the third impurity concentration is 2×10cmor less.3. The silicon carbide epitaxial substrate according to claim 1 , wherein the third impurity concentration is 5×10cmor more.4. The ...

Vapor Deposition Apparatus and Techniques Using High Purity Polymer Derived Silicon Carbide

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC. 110-. (canceled)11. A method of making boule for the production of a 4H N-Type silicon carbide wafer , having a diameter of from about 6 inches to about 10 inches , the wafer characterized with properties comprising:type/dopant:N/nitrogen;orientation:<0001>4.0°±0.5°;thickness: about 300 to about 800 μm; and,{'sup': '−2', 'micropipe density of <1 cm; and,'}the method comprising the steps of: forming a vapor of a polymer derived ceramic SiC starting material, wherein the polymer derived ceramic SiC starting material has a purity of at least about 6 nines, and is oxide layer free; depositing the vapor on a seed crystal to form a boule; and providing the boule to a wafer manufacturing process.121. The method of claim , wherein the wafer is further characterized with a property comprising RT 0.02-0.2 Ω·cm.131. The method of claim , wherein the wafer is further characterized with a property comprising RT 0.01-0.1 Ω·cm141. The method of claim , wherein the wafer is further characterized with a property comprising RT: 0.1-40 Ω·cm15. The methods of , , or , wherein the seed comprises a polymer derived ceramic SiC.16. The method of wherein the wafer manufacturing process produces a wafer having improved features claim 11 , when compared to a wafer made from a non-polymer derived SiC material.17. The method of wherein the wafer manufacturing process produces a wafer having improved features claim 12 , when compared to a wafer made from a non-polymer derived SiC material.18. The method of wherein the wafer manufacturing process produces a wafer having improved features claim 13 , when compared to a wafer made from a non-polymer derived SiC material.19. The ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal sublimates a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The method includes: mixing a tantalum (Ta) powder with a carbon powder; attaching the mixture to the solid silicon carbide raw material in the growth container; and heating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material. A silicon carbide single crystal is grown after or while the coating film is formed. Thereby, the method for manufacturing a silicon carbide single crystal has few carbon inclusions. 1. A method for manufacturing a silicon carbide single crystal by sublimating a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate , the method comprising:mixing a tantalum (Ta) powder with a carbon powder;attaching the mixture to the solid silicon carbide raw material in the growth container; andheating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material, whereina silicon carbide single crystal is grown after or while the coating film is formed.2. The method for manufacturing a silicon carbide single crystal according to claim 1 , whereinthe growth container is made of carbon, anda mixture of a tantalum (Ta) powder and a carbon powder is further attached to an inner wall of the growth container. The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those ...

SEED CRYSTAL FOR SINGLE CRYSTAL 4H-SiC GROWTH AND METHOD FOR PROCESSING THE SAME

A seed crystal for single crystal 4H-SiC growth of the present invention is a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter, in which one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, and an absolute value of magnitude of waviness in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced is less than or equal to 12 μm. 1. A disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter ,wherein one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, andwherein an absolute value of magnitude of waviness, in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced, is less than or equal to 12 μm.2. The seed crystal for single crystal 4H-SiC growth according to claim 1 ,wherein the absolute value of the magnitude of the waviness is less than or equal to 8 μm.3. The seed crystal for single crystal 4H-SiC growth according to claim 1 ,wherein the one surface on which the single crystal 4H-SiC is grown is a carbon surface.4. A method for processing a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter claim 1 , the method comprising:a first step of cutting out a disk-shaped crystal from a columnar single crystal 4H-SiC ingot having a diameter of more than 150 mm;a second step of fixing the crystal to a base material to grind one surface on which the single ...

Apparatus for impurity layered epitaxy

Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide epitaxial layer includes a first silicon carbide layer, a second silicon carbide layer, a third silicon carbide layer, and a fourth silicon carbide layer. A nitrogen concentration of the second silicon carbide layer is increased from the first silicon carbide layer toward the third silicon carbide layer. A value obtained by dividing, by a thickness of the second silicon carbide layer, a value obtained by subtracting a nitrogen concentration of the first silicon carbide layer from a nitrogen concentration of the third silicon carbide layer is less than or equal to 6×10cm. Assuming that the nitrogen concentration of the third silicon carbide layer is N cm; and a thickness of the third silicon carbide layer is X μm, X and N satisfy a Formula 1. 3. The silicon carbide epitaxial substrate according to claim 1 , wherein a nitrogen concentration of the fourth silicon carbide layer is less than the nitrogen concentration of the third silicon carbide layer.4. The silicon carbide epitaxial substrate according to claim 1 , wherein a nitrogen concentration of the fourth silicon carbide layer is less than the nitrogen concentration of the first silicon carbide layer.5. The silicon carbide epitaxial substrate according to claim 1 , wherein a nitrogen concentration of the silicon carbide substrate is more than the nitrogen concentration of the first silicon carbide layer and less than the nitrogen concentration of the third silicon carbide layer.6. The silicon carbide epitaxial substrate according to claim 1 , wherein the thickness of the second silicon carbide layer is less than or equal to 5 μm.7. The silicon carbide epitaxial substrate according to claim 1 , wherein the thickness of the third silicon carbide layer is less than or equal to 20 μm.10. The silicon carbide semiconductor device according to claim 8 , wherein a nitrogen concentration of the fourth silicon carbide layer is less than the nitrogen concentration of the third silicon carbide layer.11. The ...

Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition

Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall CVD chamber (e.g., onto a susceptor within the CVD chamber). At least two source gases can then be introduced into the hot wall CVD chamber such that, upon decomposition, fluorine atoms, carbon atoms, and silicon atoms are present within the CVD chamber. The epilayer comprising SiC can then be grown on the surface of the substrate in the presence of the fluorine atoms. 1. A method of forming an epilayer on a surface of a substrate , the method comprising:positioning a silicon carbide seed substrate within a hot wall chemical vapor deposition (CVD) chamber,introducing one or more source gases into the hot wall CVD chamber to provide fluorine, carbon, and silicon to the hot wall CVD chamber, each of the source gases comprising one or more of fluorine, carbon, and silicon;heating the hot wall CVD chamber to a growth temperature of about 1400° C. to about 2000° C., silicon-fluorine bonds forming at the growth temperature, the silicon-fluorine bond formation inhibiting formation of silicon-silicon bonds in the heated hot wall CVD chamber, the heated hot wall CVD chamber atmosphere including Si—Si vapor in an amount that is less than 5% by volume;growing a homeoepitaxial film on the silicon carbide seed substrate at the growth temperature, the homeoepitaxial film comprising a silicon carbide crystal comprising silicon and carbon in the crystal at a 1:1 stoichiometric ratio.2. The method of claim 1 , wherein one or more of the source gases comprises SiHFwhere x=1 claim 1 , 2 claim 1 , or 3; and y=4−x.3. The method of claim 1 , wherein one or more of the source gases comprises CHFwhere x=0 claim 1 , 1 claim 1 , 2 claim 1 , or 3; and y=4−x.4. The method of claim 1 , wherein one of the source gases is HF.5. The method of claim 1 , wherein one or more of the source gases comprises both fluorine and silicon.6. The method of claim 1 , ...

METHOD FOR MANUFACTURING A SILICON CARBIDE EPITAXIAL SUBSTRATE

A method for manufacturing a silicon carbide epitaxial substrate includes a process of loading a plurality of silicon carbide single crystal substrates on a substrate holder, and a process of depositing a silicon carbide epitaxial layer on the plurality of silicon carbide single crystal substrates at the same time by rotating the substrate holder about an axis perpendicular to a principal surface of the silicon carbide single crystal substrates while supplying a gas containing carbon, a gas containing silicon, nitrogen gas and ammonia gas. A flow rate of the ammonia gas to a flow rate of the nitrogen gas is not more than 0.0089. 1. A method for manufacturing a silicon carbide epitaxial substrate , comprising steps of:loading a plurality of silicon carbide single crystal substrates on a substrate holder; anddepositing a silicon carbide epitaxial layer on the plurality of silicon carbide single crystal substrates at the same time by rotating the substrate holder about an axis perpendicular to a principal surface of the silicon carbide single crystal substrates while supplying a gas containing carbon, a gas containing silicon, nitrogen gas and ammonia gas,wherein a flow rate of the ammonia gas to a flow rate of the nitrogen gas is not more than 0.0089.2. A method for manufacturing a silicon carbide epitaxial substrate , comprising steps of:loading a plurality of silicon carbide single crystal substrates on a substrate holder; anddepositing a silicon carbide epitaxial layer on the plurality of silicon carbide single crystal substrates at the same time by rotating the substrate holder about an axis perpendicular to a principal surface of the silicon carbide single crystal substrates and rotating each of the silicon carbide single crystal substrates about an axis perpendicular to a principal surface of each of the silicon carbide single crystal substrates while supplying a gas containing carbon, a gas containing silicon, and ammonia gas.3. The method for manufacturing the ...

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

Cvd reactor chamber with resistive heating for silicon carbide deposition

A CVD reactor for deposition of silicon carbide material on silicon carbide substrates, may comprise: an upper gas manifold and a lower gas manifold; and a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row; and wherein said electrically resistive heater elements and said mounting fixtures are coated with a material able to withstand exposure to (i) chemicals for removal of silicon carbide, such as ClF 3 , and (ii) process temperatures up to 1700° C., examples of the material including tantalum carbide, diamond and boron nitride.

SIC SINGLE CRYSTAL AND METHOD OF PRODUCING SAME

A SiC single crystal having high crystallinity and a large diameter is provided. 1. A SiC single crystal comprising a seed crystal with a c-plane and a non-c-plane , and a c-plane growth portion and an enlarged diameter portion that have grown from the c-plane and the non-c-plane of the seed crystal as origins in the direction of the c-plane and the direction of the non-c-plane ,wherein a continuous region free of threading dislocations is present in a peripheral portion of a plane that is parallel to the c-plane of the seed crystal and contains the seed crystal and the enlarged diameter portion, wherein the area of the continuous region occupies 50% or more of the total area of the plane.2. A SiC single crystal comprising a seed crystal with a c-plane and a non-c-plane , and a c-plane growth portion and an enlarged diameter portion that have grown from the c-plane and the non-c-plane of the seed crystal as origins in the direction of the c-plane and the direction of the non-c-plane ,wherein a continuous region free of threading dislocations, basal plane dislocations, and stacking faults is present in a peripheral portion of a plane that is parallel to the c-plane of the SiC single crystal and contains the c-plane growth portion and the enlarged diameter portion, wherein the area of the continuous region occupies 50% or more of the total area of the plane.3. The SiC single crystal according to claim 1 , wherein the angle of the diameter enlargement is 35 degrees to 90 degrees.4. The SiC single crystal according to claim 1 , wherein claim 1 , in a plane that is parallel to the c-plane of the seed crystal and contains the seed crystal and the enlarged diameter portion claim 1 , the area of the enlarged diameter portion occupies 50% or more of the total area of the plane claim 1 , and the enlarged diameter portion is free of threading dislocations.5. The SiC single crystal according to claim 2 , wherein claim 2 , in a plane that is parallel to the c-plane of the SiC ...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

The present invention provides a method for producing a SiC single crystal, which allows improving the quality of the single crystal even when crystal growth is performed by forming a meniscus. A growth step in the production method according to the present embodiment comprises a forming step and a first maintenance step. In the forming step, a meniscus is formed between a growth interface of a SiC single crystal and a liquid surface of a Si—C solution. In the first maintenance step, the fluctuation range of the height of the meniscus is maintained within a predetermined range by moving at least one of a seed shaft and a crucible relative to the other in the height direction. 19-. (canceled)10. A method for producing a SiC single crystal by a solution growth method , comprising:a preparation step of preparing a production apparatus including a crucible in which a raw material of a Si—C solution is contained, and a seed shaft to which a SiC seed crystal is attached;a generation step of heating and melting the raw material in the crucible and generating the Si—C solution; anda growth step of bringing the SiC seed crystal into contact with the Si—C solution to cause the SiC single crystal to grow on the SiC seed crystal, whereinthe growth step includes:a forming step of forming a meniscus between a growth interface of the SiC single crystal and a liquid surface of the Si—C solution; anda first maintenance step of maintaining a fluctuation range of a height of the meniscus within a predetermined range by moving at least one of the seed shaft and the crucible relative to the other in a height direction.11. The production method according to claim 10 , whereinin the first maintenance step, at least one of the seed shaft and the crucible is moved relative to the other in the height direction based on both a growth thickness of the SiC single crystal as a function of elapsed time and a fluctuation quantity of a liquid surface height of the Si—C solution in the growth step. ...

SILICON CARBIDE CRYSTAL

A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer. 1. A silicon carbide crystal , comprising a seed layer , a bulk layer , and a stress buffering structure formed between the seed layer and the bulk layer , wherein the seed layer , the bulk layer , and the stress buffering structure are each formed with a dopant , and the dopant of the stress buffering structure cycles between high and low dopant concentrations;characterized in that the stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers, wherein the buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.2. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a thickness that is greater than 0 μm and less than 0.1 μm.3. The silicon carbide crystal of claim 2 , wherein the stress buffering structure has a thickness that is less than 0.1 mm.4. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a dopant concentration gradient in its thickness direction.5. The silicon carbide crystal of claim 4 , wherein the dopant of the seed layer has a reference concentration claim 4 , and the ...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV. 1: A silicon carbide single crystal substrate comprising a main surface inclined in a <11-20> direction relative to a (0001) plane ,in a case where a detector is positioned in a [11-20] direction when viewed in a direction perpendicular to the main surface, where a first measurement region including a center of the main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, and where a diffracted X ray from the first measurement region is measured using the detector, a ratio of a maximum intensity of a first intensity profile of the diffracted X ray in a range of 6.9 keV to 11.7 keV to a background intensity of the first intensity profile being more than or equal to 1500,in a case where the detector is positioned in a direction parallel to a [−1100] direction when viewed in the direction perpendicular to the main surface, where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, and where a diffracted X ray from the first measurement region is measured using the detector, a ratio of a maximum intensity of a second intensity profile of the diffracted X ray in a range ...

Shielding member and apparatus for single crystal growth

This shielding member that is placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, wherein the device includes a crystal growth container including the SiC source loading portion which accommodates a SiC source in an inner bottom portion, and the crystal installation portion facing the SiC source loading portion, and a heating unit that is configured to heat the crystal growth container, and the device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the SiC source loading portion; the shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container, and wherein, in a case where the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates, which is projected on an internal circle of the SiC source loading portion at SiC source surface, is 0.5 or more.

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in the silicon carbide layer is not less than 1×10cmand not more than 5×10cm. In-plane uniformity of the carrier concentration is not more than 2%. The second main surface has: a groove extending in one direction along the second main surface, a width of the groove in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of the groove from the second main surface being not more than 10 nm; and a carrot defect. A value obtained by dividing a number of the carrot defects by a number of the grooves is not more than 1/500. 1. A silicon carbide epitaxial substrate comprising:a silicon carbide single-crystal substrate including a first main surface; anda silicon carbide layer on the first main surface,the silicon carbide layer including a second main surface opposite to a surface thereof in contact with the silicon carbide single-crystal substrate,{'sup': 15', '−3', '16', '−3, 'an average value of carrier concentration in the silicon carbide layer being not less than 1×10cmand not more than 5×10cm,'}in-plane uniformity of the carrier concentration being not more than 2%, grooves extending in one direction along the second main surface, a width of each of the grooves in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of each of the grooves from the second main surface being not more than 10 nm, and', 'one or more carrot defects,, 'the second main surface having'}a value obtained by dividing a number of the one or more carrot defects by a number of the grooves being not more than 1/500,the silicon carbide single-crystal substrate having a diameter of not less than 150 mm.2. The silicon carbide epitaxial substrate according to claim 1 , whereineach of ...

SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENT

A method for manufacturing a SiC fluorescent material, which includes growing the SiC fluorescent material in a hydrogen-containing atmosphere by a sublimation method in the manufacture of the SiC fluorescent material, the SiC fluorescent material including a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site, and a donor impurity and an acceptor impurity added therein, wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure. 1. A method for manufacturing a SiC fluorescent material , which comprises growing the SiC fluorescent material in a hydrogen-containing atmosphere by a sublimation method in the manufacture of the SiC fluorescent material , the SiC fluorescent material comprising a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site , and a donor impurity and an acceptor impurity added therein ,wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure.2. A light emitting element comprising:a SiC substrate including a SiC fluorescent material, the SiC fluorescent material comprising a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site, and a donor impurity and an acceptor impurity added therein,wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure; anda nitride semiconductor layer formed on the SiC substrate. The present application is a Divisional Application of U.S. patent application ...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H—SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the.top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface. 1. A method for manufacturing a silicon carbide substrate , the method comprising:preparing a silicon carbide ingot; andcutting the silicon carbide ingot using a wire,the silicon carbide ingot having a polytype of 4H—SiC,the silicon carbide ingot including a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface,a direction from the bottom surface toward the top surface being a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction,in the cutting of the silicon carbide ingot, the silicon carbide ingot being cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.2. The method for manufacturing the silicon carbide substrate according to claim 1 , wherein in the cutting of the silicon carbide ingot claim 1 , a linear velocity of the wire is more than or equal to 1000 m/minute.3. The method for manufacturing the ...

Silicon Carbide Crystal Growth by Silicon Chemical Vapor Transport

In a method for growing bulk SiC single crystals using chemical vapor transport, wherein silicon acts as a chemical transport agent for carbon, a growth crucible is charged with a solid carbon source material and a SiC single crystal seed disposed therein in spaced relationship. A halosilane gas, such as SiCland a reducing gas, such as H, are introduced into the crucible via separate inlets and mix in the crucible interior. The crucible is heated in a manner that encourages chemical reaction between the halosilane gas and the reducing gas leading to the chemical reduction of the halosilane gas to elemental silicon (Si) vapor. The produced Si vapor is transported to the solid carbon source material where it reacts with the solid carbon source material yielding volatile Si-bearing and C-bearing molecules. The produced Si-bearing and C-bearing vapors are transported to the SiC single crystal seed and precipitate on the SiC single crystal seed causing growth of a SiC single crystal on the SiC single crystal seed. 1. A method for SiC crystal growth by chemical vapor transport with silicon comprising:(a) providing a SiC growth system that includes a silicon carbide seed crystal and solid carbon source material positioned in spaced relation;(b) heating the SiC growth system and introducing into the SiC growth system a gaseous halosilane and a reducing gas, wherein the gaseous halosilane and the reducing gas react in the SiC growth system yielding elemental silicon vapor;(c) reacting the elemental silicon vapor of step (b) with the solid carbon source material of step (a) yielding silicon-bearing and carbon-bearing vapors;(d) transporting the silicon-bearing and carbon-bearing vapors of step (c) to the SiC seed of step (a); and(e) precipitating the silicon-bearing and carbon-bearing vapors of step (c) on the SiC seed of step (a) to grow the silicon carbide single crystal.2. The method of claim 1 , wherein the halosilane gas and the reducing gas are separately introduced ...

DEVICE FOR GROWING MONOCRYSTALLINE CRYSTAL

A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material. 1. A device for growing monocrystalline crystals , comprising:a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region;a thermally insulating material disposed outside the crucible and below a heat dissipation component; anda plurality of heating components disposed outside the thermally insulating material to provide heat sources,wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.2. The device of claim 1 , wherein the crucible is a graphite crucible.3. The device of claim 1 , wherein the heat dissipation inner diameter equals one of 10˜250 mm and 1%-85% of an outer diameter of an upper portion of the crucible.4. The device of claim 1 , wherein the heat dissipation height equals 5˜200 mm.5. The device of claim 1 , wherein the heat dissipation component is made of one of a porous claim 1 , thermally insulating carbon material claim 1 , a graphite claim 1 , and a graphite felt.6. The device of claim 1 , wherein the thermally insulating material is a graphite felt.7. The device of claim 1 , wherein the material source region contains the material source.8. The device of claim 1 , wherein the material source is ...

APPARATUS FOR GROWING A SEMICONDUCTOR WAFER AND ASSOCIATED MANUFACTURING PROCESS

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface. 1. An apparatus , comprising:a chamber;a collection container in the chamber; anda support in the chamber and over the container,the support including a frame, an opening surrounded by the frame, a plurality of arms, and a seat within the opening,the frame having a first surface and a second surface, opposite to each other,the first surface of the frame facing the collection container,the arms being cantilever bars extending from the frame into the opening,each of the arms having a maximum height that is smaller than a maximum height of the frame, and a resting edge,the resting edges of the arms defining a resting surface that is at a lower level than the second surface of the frame,the seat having a bottom formed by the resting surface.2. The apparatus according to claim 1 , wherein the resting surface is positioned at a distance from the second surface substantially equal to a thickness of a substrate to be inserted in use into the seat.3. The apparatus according to claim 1 , wherein the resting surface is positioned at a distance from the second surface.4. The apparatus according to claim 1 , wherein each of the arms includes an upper portion delimited by at least one inclined side claim 1 , and the inclined side of each arm has a ...