PLANT AND PROCEDURE FOR NANO-PRODUCTION

Multi-source ion beam etch system

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

WORKPIECE HEIGHT ADJUSTMENT IN AN ELECTRON BEAM LITHOGRAPHY MACHINE

An electron beam lithography machine (10) comprises a column (11) for generating an electron beam (12), a stage (17) for carrying a workpiece (15) to be acted on by the beam, for example for writing a pattern, vertical displacing means (20) for displacing the stage (17) in substantially vertical direction towards and away from the column and a detector (35) for detecting the relationship of a reference plane (A) associated with the column and a reference plane (B) associated with the stage (17) and causing the displacing means (20) to displace the stage in dependence on the detected relationship. The reference planes can be, for example, a writing plane (A) of the beam (12) and a top surface plane (B) of the workpiece (15), which can be brought into coincidence prior to, for example, pattern-writing on workpieces with different thicknesses.

Charged particle beam system and method of operating a charged particle beam system

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C.

Electron beam apparatus and method with surface height calculator and a dual projection optical unit

An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

Method of processing objects by focused ion beam system and carrier used therewith

A method of processing objects by a FIB (Focused Ion Beam) system and a carrier used therewith are provided. The carrier includes a carrying member and a processing portion having an object disposed thereon. Before the carrier is disposed into the FIB system, the carrying member is set to be flush in height with the processing portion having the object disposed thereon. After an eucentric height adjustment inside the FIB system, both the carrying member and the processing portion are in a same plane with the eucentric point of the system. Therefore, after the object on the processing portion is processed, a processed object or a processed block of the object can be moved to the carrying member without performing further eucentric height adjustment with respect to the carrying member.

A PROCESS AND APPARATUS FOR THE PREPARATION OF A BONDED SUBSTRATE

The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate. The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100) ...

Plasma processing apparatus and plasma processing method

A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

VACUUM PROCESSING APPARATUS

A vacuum processing apparatus with improved processing efficiency, which includes a pusher arm to support the wafer on a beam portion, or deliver the supported wafer, and a cooling plate disposed on a bottom in the lock chamber for cooling the wafer and placed on tip ends of multiple support pins. The pusher arm includes four pusher pins disposed around a center of the wafer to be placed on the horizontally extending beam portion, and a drive unit connected to the proximal part for vertically moving the beam portion. The cooling plate includes a recess portion in its center, into which the beam portion of the pusher arm which has been moved downward is stored. The support pins are positioned closer to an outer circumference side of the wafer on the cooling plate with respect to the center than the pusher pins of the pusher arm.

МОДУЛЬНЫЙ РЕАКТОР ОСАЖДЕНИЯ С ИСПОЛЬЗОВАНИЕМ МИКРОВОЛНОВОЙ ПЛАЗМЫ

FIELD: technological processes.SUBSTANCE: disclosed group of inventions relates to a modular reactor for making synthetic diamonds by deposition in a microwave plasma and to a method of producing synthetic diamonds using said reactor. Said reactor comprises a microwave generator configured to generate microwaves with a frequency within range of 300 MHz to 3000 MHz, resonator cavity formed at least partially by cylindrical inner walls of reactor chamber, gas supply system and gas outlet module, a wave communication module configured to transmit microwaves from the microwave generator to the resonator cavity to enable formation of a plasma, and a growth substrate in the resonator cavity. Said modular reactor comprises at least three modular elements selected from the following elements: at least one rim for changing the shape and/or volume of the resonator cavity, module of substrate holder with possibility of vertical movement and rotation in contact with quarter-wave metal structure and containing at least one cooling system with fluid medium, plates for change of shape and volume of resonator cavity, gas-distributing module and module of control of substrate cooling.EFFECT: possibility of creating a modular reactor having several configurations for optimizing the expected result of diamond growth, and controlling local growth conditions on the surface of the growing diamond with varying different growth conditions of the diamond.18 cl, 12 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 725 428 C1 (51) МПК C23C 16/27 (2006.01) C23C 16/458 (2006.01) C23C 16/54 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C23C 16/27 (2019.08); C23C 16/458 (2019.08); C23C 16/54 (2019.08) (21)(22) Заявка: 2019120472, 08.12.2017 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): ДИАМ КОНСЕПТ (FR) Дата регистрации: 02.07.2020 09.12.2016 FR FR1670746 (45) Опубликовано: 02.07.2020 Бюл. № 19 (85) Дата начала ...

NANOFABRICATION INSTALLATION AND PROCESS

Installation de nano- fabrication comprenant : - un porte-échantillon recevant un échantillon, - un masque comprenant une ouverture traversante entre les faces supérieure et inférieure du masque, laissant passer des particules chargées en direction du porte-échantillon, - un dispositif de détection en champ proche détectant une position relative du masque (8) et du porte- échantillon (3) , - un dispositif de déplacement générant un mouvement relatif du masque (8) et du porte-échantillon (3) indépendamment de la position relative de la source (1) et du masque (8) , le masque comprenant au moins une première électrode au niveau de l'ouverture traversante (10) .

Nanofabrication installation, has mask with electrode placed on lower side of mask and provided at level of traversing opening, for electrical interaction with nanoclusters passing through surface of sample

The installation has a mask (8) provided for formation of a sample (4). The mask comprises an electrode placed on a lower side of the mask and provided at the level of a traversing opening (10), for electrical interaction with nanoclusters e.g. gold clusters, passing through a surface (4a) of the sample. The electrode is provided close to the opening, so that electrons are emitted on arrival of the clusters on the surface of the sample, if the clusters are positively charged. A generator applies an adjustable electric voltage to the electrode. An independent claim is also included for a nanofabrication method.

ELECTRON BEAM DRAWING DEVICE INCLUDING DIFFERENTIAL OUTPUT UNIT AND ELECTRON BEAM DRAWING METHOD

PURPOSE: An electron beam drawing device and electron beam drawing method are provided to correct the height of the mask. CONSTITUTION: The electron beam lithography device includes the XY stage(3), the focus adjusting mark(4) for the electron beam, the height measuring unit and the Z stage(5). The XY stage moves to the optical axial and the right angle direction of the electron beam. The focus adjusting mark for the electron beam is fixed at the XY stage. The Z stage is mounted on the XY stage. The Z stage moves to the optical axis. The height measuring unit measures the height of the mask(M) loaded in the retention support device(6) and a height of the mark. COPYRIGHT KIPO 2010 ...

Lift pin holder

Embodiments of lift pin holders are disclosed herein. In some embodiments, a lift pin holder includes a housing member having an upper portion and a lower portion, wherein the upper portion includes an annular wall defining a central space; a support member disposed at least partially within the central space and having a base and an upwardly protruding portion configured to support a lift pin; a first gripper disposed atop the support member and having a first plurality of prongs protruding upward from a body of the first gripper and configured to grip the lift pin; and a second gripper disposed atop the base of the support member and having a second plurality of prongs protruding upward from a body of the second gripper and are configured to grip the lift pin, wherein the first gripper is disposed within the third central opening.

Methods for discretized processing and process sequence integration of regions of a substrate

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

Methods for discretized processing and process sequence integration of regions of a substrate

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

INTERFEROMETRIC STAGE POSITIONING APPARATUS

A stage apparatus for an e-beam inspection apparatus comprising: an object table () comprising an supporting surface, the object table configured to support a substrate () on the supporting surface; a positioning device () configured to a position the object table; a position measurement system () comprising a position sensor (-) configured to measure a height position of the object table parallel to a first axis, the first axis being substantially perpendicular to the supporting surface, the position sensor comprising an interferometer measurement system having an interferometer sensor (), wherein a measurement beam () of the interferometer sensor is configured to irradiate a reflective surface () of the object table in a measurement direction, the measurement direction having a first component parallel to the first axis and a second component parallel to a second axis, the second axis being substantially perpendicular to the first axis. 1. An apparatus comprising:a beam generator configured to provide a beam on a substrate;an object table comprising an supporting surface, the object table configured to support the substrate on the supporting surface;a positioning device configured to position the object table;a position measurement system comprising a position sensor configured to measure a height position of the object table parallel to a first axis, the first axis being substantially perpendicular to the supporting surface, the position sensor comprising an interferometer measurement system having an interferometer sensor,wherein a measurement beam of the interferometer sensor is configured to irradiate a reflective surface of the object table in a measurement direction, the measurement direction having a first component parallel to the first axis and a second component parallel to a second axis, the second axis being substantially perpendicular to the first axis andwherein a reflective reference surface of the interferometer sensor configured to be irradiated ...

CARRIER AND ANALYSIS APPARATUS PROVIDED WITH THE SAME

PROBLEM TO BE SOLVED: To provide a carrier and an analysis apparatus provided with it. SOLUTION: The analysis apparatus is provided with a sample holder 31 where a sample is mounted and having a guide groove, a sample-receiving part 11 for mounting the sample holder 31 and having a guide rail, coupled to the guide groove and a sample elevating part 19 for vertically elevating the sample receiving part 11 and loading and ejecting the sample holder 31. The sample elevating part 19 is the carrier 10 installed in the inside a driving part 25 for vertically driving the sample-receiving part 11 and a vacuum chamber internally placing the driving part 25 and hermetically maintaining vacuum. As a result, moisture is shielded and an accurate analysis can be implemented. COPYRIGHT: (C)2005,JPO&NCIPI ...

Verfahren und Vorrichtung zur Ionenstrahlbearbeitung von Oberflächen

Verfahren zur Ionenstrahlbearbeitung der Oberfläche eines Substrates, bei dem das Substrat gegenüber dem Ionenstrahl einer Breitstrahl-Ionenquelle positioniert wird, und das bekannte Eigenschaftsmuster der Oberfläche des Substrates durch den Ionenstrahl partiell derart bearbeitet wird, dass ein neues technologisch definiertes Eigenschaftsmuster ausgebildet wird, dadurch gekennzeichnet, dass die Strahlcharakteristik des Ionenstrahles zur Erzeugung eines geometrischen Wirkungsmusters auf der Oberfläche (15) des Substrates (8) durch Veränderung der Ionenbeschleunigung, der Ionenenergieverteilung, der Ionenstromdichte, der Ionendichteverteilung, und/oder durch Pulsung des Ionenstrahles derart verändert wird, dass in Abhängigkeit des bekannten Eigenschaftsmusters und in Abhängigkeit des Verfahrensfortschrittes das neue technologisch definierte Eigenschaftsmuster eingestellt wird.

Plasma processing apparatus

Substrate processing apparatus including a chamber 13a and a substrate support 12 within the chamber which is raisable and lowerable during operation. The substrate support has a constant cross-section portion 19 and the chamber or an element thereon includes a projection 26 which co-operates with the constant cross-section portion to define a fixed dimension gas outlet 27 in all operative positions of the support.

ADJUSTABLE IMPLANTATION ANGLE WORKPIECE SUPPORT STRUCTURE FOR AN ION BEAM IMPLANTER

Support and analyzing device including same

Electron-beam size measuring apparatus and size measuring method with electron beams

Lithography apparatus using scanning tunneling microscopy

A lithography apparatus is provided with an SXM base, which has a plurality of cantilevers movably supporting probes at their free ends, respectively. The SXM base is secured to a mirror base by a support arm via inchworm devices, such that it faces a silicon wafer placed on a wafer stage. The silicon wafer has an alignment pattern formed thereon, while the SXM base has a reference alignment pattern formed thereon which is similar to the alignment pattern. A voltage is applied to the probes at a predetermined point of time under the control of a controller while a gas containing a film-forming material is being supplied onto the wafer, whereby the film-forming material is adsorbed in a desired portion of the surface of the wafer.

Methods for discretized processing and process sequence integration of regions of a substrate

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

Scanner for GCIB system

Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Transmissionsrastermikroskopie unter Einbeziehung von Elektronenenergieverlustspektroskopie und Beobachtungsverfahren hierfür

Eine Aufgabe der vorliegenden Erfindung bezieht sich auf eine hochauflösende Beobachtung an einer Hellfeld-STEM, einer Dunkelfeldbild-STEM und einer EELS bei niedriger Beschleunigungsspannung.Die vorliegende Erfindung bezieht sich auf die Steuerung von Inkorporationswinkeln eines STEM-Detektors und einer Elektronenenergieverlustspektroskopie durch Verändern der Anordnung einer Probe in Bezug auf eine optische Achsenrichtung eines Primärelektronenstrahls in einer Rastertransmissionsmikroskopie unter Einbeziehung einer Elektronenenergieverlustspektroskopie.Gemäß der Erfindung kann jeweils ein optimaler Streuwinkel bei der Hellfeld-STEM, Dunkelfeld-STEM und EELS auf einfache Weise gesteuert werden, während gleichzeitig das Auftreten einer chromatischen Aberration unterbunden ist, die mit der Steuerung des Inkorporationswinkels einhergeht.

Workpiece height adjustment in an eletron beam lithography machine

PROCEDURE AND DEVICE FOR THE TREATMENT OF ION BEAMS OF SURFACES

The sample stage, a charged particle beam device and sample observation method

APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR PROCESSING SUBSTRATE TO SHORTEN THE PROCESS TIME AND PREVENT THE CONTAMINATION OF SUBSTRATE

PURPOSE: An apparatus for processing substrate and method for processing substrate are provided to reduce the installation space of equipment by performing individually plasma treatment on the edge region of substrate and rear region in a single chamber. CONSTITUTION: A chamber(100) provides a reaction space. A stage(200) is installed at an inside of the chamber. The plasma shielding part(300) is installed at the inside of the chamber. The holder(410) is placed between the stage and the plasma shielding part. The first supply opening(210) supplies a reaction gas or a non-reactive gas in the one side of substrate. The second supply opening(311) and the third supply opening(312) is prepared in the plasma shielding part and supply the reaction gas and non-reactive gas to the other side of the substrate. © KIPO 2009 ...

A Device for Extracting and Placing a Lamella

A device for creating and placing a lamella comprises a focused ion beam, a scanning electron microscope, a stage for placing at least two specimens enabling tilting, rotation and movement of the specimen. The device further comprises a manipulator terminated by a needle for attaching and transporting the specimen. The manipulator is positioned in a plane perpendicular to the axis of the tilt of the specimen, thereby enabling easy transportation and placing of the lamella into the specimen holder for a transmission electron microscope, so-called grid. The manipulator is adjusted to rotate the needle about its own axis. Thus, it enables inverting of the lamella and its polishing over a layer of semiconductor substrate, on which a semiconductor structure is formed, in case of creating the lamella from a semiconductor device. 1. A device for extracting and placing a lamella , comprising a focused ion beam column , a scanning electron microscope column , and a specimen chamber with a stage for positioning of at least two specimens enabling tilting , rotation and movement along three mutually perpendicular axes , wherein the tilting is enabled about the axis perpendicular to a plane defined by the axis of the focused ion beam column and by the axis of the scanning electron microscope column , and the rotation is enabled about the vertical axis , further comprising a handler terminated by a needle , which is able to move and rotate about its own axis , wherein the handler is positioned in a plane defined by the axis of the focused ion beam column and by the axis of the scanning electron microscope column , wherein the handler is placed directly under the focused ion beam column and above an intersection of the axis of the scanning electron microscope column and the axis of the focused ion beam column.2. The device for extracting and placing a lamella according to claim 1 , wherein the handler is placed at an angle 0°-35° from the line perpendicular to the axis of the ...

SAMPLE STAGE MOBILE UNIT OF CHARGED PARTICLE BEAM DEVICE

PROBLEM TO BE SOLVED: To provide a sample stage mobile unit of a charged particle beam device capable of tomography by adding a Z-motion mechanism. SOLUTION: Balls 25 are in three tapered surfaces 23b on a rotary disk 23. The rotary disk 23 is rotated via a worm gear 24 to cause the balls 25 to go upward along the tapered surfaces 23b so as to push upward an elevating disk 22 placed at an upper part in the Z-direction. Consequently, the sample stage 13 is pushed up in the Z-direction. COPYRIGHT: (C)2009,JPO&INPIT ...

Probenaufnahmebehälter, Ladungsteilchenstrahlvorrichtung und Bilderfassungsverfahren

Probenaufnahmebehälter, eingeführt von außerhalb eines Gehäuses (7) in das Gehäuse (7) einer Ladungsteilchenstrahlvorrichtung zum Erfassen eines Bildes einer Probe (6) mit einem Signal, das durch Bestrahlen der Probe (6) mit Ladungsteilchenstrahlen in einem Zustand, in dem eine Atmosphäre eines Raumes (12) mit einer Probe (6) von einer Atmosphäre innerhalb des Gehäuses (7) getrennt ist, erhalten wird, der Probenaufnahmebehälter aufweisend:einen Aufnahmebehälter (100) zum Aufnehmen der Probe (6), wobei der Raum (12) im Inneren des Aufnahmebehälters (100) unter atmosphärischem Druck oder einem gewünschten Gasdruck ist und sich die Atmosphäre außerhalb des Aufnahmebehälters (100) aber innerhalb des Gehäuses (7) in einem Vakuumzustand befindet,eine Blende (10), durch die Ladungsteilchenstrahlen hindurchtreten oder passieren,einen Positionseinstellmechanismus, der im Inneren des Aufnahmebehälters (100) angeordnet und in der Lage ist, die relative Position der Probe (6) bezogen auf die Blende ...

Kryostationssystem

Die vorliegende Erfindung dient der Konservierung einer gekühlten Probe, die einer Gefrierbehandlung oder dergleichen ausgesetzt wurde, wobei sie die Bildung von Kondensat und frostartigen Substanzen verhindert und die Probe zur Beobachtung mit einer Ladungsteilchenstrahlvorrichtung in einen Probenhalter lädt. Die vorliegende Erfindung ist versehen mit einem Hauptkörper zum Konservieren einer Probe und einer Deckeleinheit, die auf dem Hauptkörper montiert ist, und ist dadurch gekennzeichnet, dass der Hauptkörper durch ein Trennelement in einen ersten Raum und einen zweiten Raum unterteilt ist; der erste Raum nimmt ein Kältemittel zum Kühlen der Probe auf; der zweite Raum weist eine Heizeinheit auf, die darin angeordnet ist, um das im ersten Raum aufgenommene Kältemittel zu erwärmen; und die Deckeleinheit weist eine Auslassöffnung auf, die darin gebildet ist, um ein Gas, das durch das Erwärmen des Kältemittels erzeugt wird, nach außen auszulassen.

Workpiece height adjustment in an electron beam lithography machine

The present invention relates to an electron beam lithography machine 10 comprising a column 11 for generating an electron beam 12, a stage 17 for carrying a work-piece and a vertical displacing means 20 for displacing the stage 17 in a substantially vertical direction towards and away from the column. There is also a detector 35 for detecting the relationship of a reference plane A associated with the column, and a reference plane B associated with the stage 17. Displacement means 20 causes displacement of the stage in dependence on this detected relationship. This allows for differences in sample thickness to be taken into account before electron bean processing begins, i.e. for calibration means, or during the process for dynamic adjustment.

METHOD AND DEVICE FOR ION BEAM PROCESSING OF SURFACES

The invention relates to a method and device for ion beam processing of surfaces, whereby the substrate is positioned facing an ion beam and a new technologically-defined pattern of properties is established. According to said method, the current geometrical effect pattern of the ion beam on the surface (15) of the substrate (8) is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties and depending on the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. Said device comprises a substrate support, for holding at least one substrate (8), which can be moved along an Y-axis (4) and an X-axis (6) and an ion beam source (1), for generating an ion beam which is perpendicular to the surface (15) to be processed of the substrate (8) in the Z-axis (11) or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source (1) and the surface (15) to be ...

Opto-mechanical automatic focusing system and method

The disclosed apparatus comprises a charged particle beam system and method including a particle beam generator for forming a beam of electrons, ions or other charged particles and for directing the beam along a predetermined axis to a focal point. Object support means support an object on the particle beam axis with the focal point on a surface of the object. There is provided an optical beam system forming part of an autofocusing system for maintaining the relative positions of the beam generating means and the object support means along the particle beam axis. The optical beam system comprises means for developing an optical beam, and means for directing the optical beam transversely to the particle beam axis and at an acute angle to the object surface. Means are provided for forming an optical beam first focus on a surface of the object. Optical image forming mirror means collects radiation from the optical beam first focus and forms a beam second focus in the vicinity of the beam first ...

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

METHOD OF PROCESSING OBJECTS BY FOCUSED ION BEAM SYSTEM AND CARRIER USED THEREWITH

A method of processing objects by a FIB (Focused Ion Beam) system and a carrier used therewith are provided. The carrier includes a carrying member and a processing portion having an object disposed thereon. Before the carrier is disposed into the FIB system, the carrying member is set to be flush in height with the processing portion having the object disposed thereon. After an eucentric height adjustment inside the FIB system, both the carrying member and the processing portion are in a same plane with the eucentric point of the system. Therefore, after the object on the processing portion is processed, a processed object or a processed block of the object can be moved to the carrying member without performing further eucentric height adjustment with respect to the carrying member.

STAGE MECHANISM AND TABLE HEIGHT POSITION ADJUSTMENT METHOD

A stage mechanism includes a wedge with an inclined surface having a predetermined angle with respect to a horizontal direction, a roller relatively rolling on the inclined surface of the wedge by relative horizontal movement of the wedge, a fine movement mechanism supporting the roller, going up and down in accordance with up and down movement of the roller which relatively rolls on the inclined surfaces by the relative horizontal movement of the wedge, and capable of going up and down more finely than the up and down movement of the roller, a table supported by the fine movement mechanism, and an elastic body connected to the table, restraining horizontal movement of the table, and applying an elastic force, in at least one of upward and downward directions, to the table.

Sputtering apparatus

A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit.

Sample holder for electron microscopy

A sample holder for electron microscopy of air-sensitive samples for use in electron microscopy incorporates a housing and a closure assembly. The closure assembly comprises a lid comprising at least one closure arm receiving portions recessed within a flat, planar upper surface thereof. The housing comprises one or more closure arm(s) corresponding to one or more closure arm receiving portion(s). In a fully closed position, the closure arm(s) share contact with the closure arm receiving portion(s). The lid is flexibly coupled to a motor cover plate which can be actuated by a motor assembly configured to open and close the lid. The sample holder also includes an elevator assembly with a vertically adjustable sample stage which sits below the lid. The sample stage is vertically adjusted by actuation of a bellows assembly which sits beneath the sample stage.

CHARGED PARTICLE BEAM DRAWING APPARATUS, AND CHARGED PARTICLE BEAM DRAWING METHOD

PROBLEM TO BE SOLVED: To provide an apparatus in which the drawing time is shortened and the number of sensors for measuring the height of a sample is decreased even when a multicolumn system is employed. SOLUTION: The drawing apparatus 100 includes an XY stage 105 moving in a predetermined direction while mounting a sample 101, a column 220 for irradiating the drawing region of the sample 101 with an electron beam 200, a column 320 located in the rear of the column 220 and irradiating the drawing region of the sample 101 with an electron beam 300, a z sensor (a floodlight 209 and a photodetector 210) for measuring the height of a sample in front of the position where the column 220 irradiates the electron beam 200 in the predetermined direction or directly under the irradiating position. The drawing time can be shortened and the number of sensors can be made fewer than the number of columns. COPYRIGHT: (C)2009,JPO&INPIT ...

Verfahren zum Anpassen der Höhe einer Probe und eines Beobachtungssystems

In einer Vorrichtung zum Durchführen einer Beobachtung mit einem Ladungsträgermikroskop bei Atmosphärendruck unter Verwendung einer Membran bestand zwar ein Bedarf daran, einen Abstand zwischen der Membran und einer Probe so weit wie möglich zu reduzieren, jedoch gab es das Problem, dass eine Grenze dafür, wie nahe die Membran und die Probe aufeinander zu gebracht werden können, in der Vergangenheit unbekannt war. In der vorliegenden Erfindung wird ein Höhenanpassungselement verwendet und die Position einer Membran in einer Ladungsträgerstrahlvorrichtung in Bezug auf das Höhenanpassungselements wird als der spezifische Punkt einer optischen Vorrichtung so definiert, dass die Positionsbeziehung zwischen dem Höhenanpassungselement und der Membran in der optischen Vorrichtung reproduziert wird, und die Höhe eines Probentisches mit einem Z-Achsen-Antriebsmechanismus wird angepasst, um die Oberfläche der Probe an der Position des spezifischen Punktes der optischen Vorrichtung anzuordnen. Dementsprechend ...

APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR PROCESSING SUBSTRATE

Techniques for processing a substrate

Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.

METHOD AND APPARATUS FOR PATTERNING MICRO AND NANO STRUCTURES USING A MASK-LESS PROCESS

According to a specific embodiment of the present invention, a mask-less lithography method and apparatus is provided. The apparatus includes an integrated write head on a slider with an air bearing that creates a lift force that allows that write head to fly over a spinning wafer substrate in nanometer distance without physical contact. The short distance between the write head and substrate prevents the light from diffracting. As a result, micro and nanometer structures can be patterned without being limited by light diffraction in conventional lithography methods.

Method and Device for Ion Beam Processing of Surfaces

A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or ...

LITHOGRAPHIC DEVICE

PURPOSE: To form an ultramicroscopic thin film pattern on a semiconductor wafer that could not be accomplished by photolithographic technique. CONSTITUTION: An SXM base 20, provided with a plurality of probes consisting of a cantilever with which the probes are scanned, is supported by a supporting arm part 29 almost in parallel with an Si wafer 6 through the intermediary of an inching worm devices 43 and 44. A relative positioning is conducted between the SXM base and the Si water 6. A thin film material is attracted to the desired position on the wafer 6 by allowing a tunnel current which is allowed to flow between the probes and the Si wafer 6 while the gas of thin film material is being fed from a gas feeding source 36. COPYRIGHT: (C)1992,JPO&Japio ...

NANOFABRICATION INSTALLATION AND PROCESS

Installation de nano- fabrication comprenant : - un porte-échantillon recevant un échantillon, - un masque comprenant une ouverture traversante entre les faces supérieure et inférieure du masque, laissant passer des particules chargées en direction du porte-échantillon, - un dispositif de détection en champ proche détectant une position relative du masque (8) et du porte- échantillon (3) , - un dispositif de déplacement générant un mouvement relatif du masque (8) et du porte-échantillon (3) indépendamment de la position relative de la source (1) et du masque (8) , le masque comprenant au moins une première électrode au niveau de l'ouverture traversante (10) .

Apparatus and method for processing substrate

本发明提供一种用于处理衬底的设备和方法。通过使用所述设备和方法，可在单个腔室中在衬底的边缘区和后部区中的每一者上个别执行等离子处理。所述设备包含：腔室，其提供反应空间；平台，其安装在所述腔室中；等离子屏蔽单元，其在所述腔室中是与所述平台相对地安装着；支撑单元，其用于在所述平台与所述等离子屏蔽单元之间支撑衬底；第一供应管，其提供于所述平台处以将反应气体或非反应气体供应到所述衬底的一个表面；以及第二和第三供应管，其提供于所述等离子屏蔽单元处，所述第二供应管将反应气体供应到所述衬底的另一表面，所述第三供应管将非反应气体供应到所述另一表面。

CARRIER AND ANALYZING APPARATUS HAVING THE SAME FOR PRECISELY ANALYZING SAMPLES BY SHIELDING MOISTURE

PURPOSE: A carrier and an analyzing apparatus having the same are provided to precisely analyze samples by shielding moisture when analyzing the samples. CONSTITUTION: A carrier(10) includes a sample holder for placing a sample therein. A guide recess is formed in the sample holder(31). A sample receiving part(11) is provided to load the sample holder thereon. The sample receiving part(11) has a guide rail(17) coupled with the guide recess. A sample lifting part(19) is provided to move the sample receiving part(11) up and down. The sample lifting part(19) includes a driving part for driving the sample receiving part(11) in the upward or downward direction, and a vacuum chamber(16) for maintained in a vacuum state. © KIPO 2005 ...

TECHNIQUES FOR PROCESSING A SUBSTRATE

Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.

Method for adjusting height of sample and observation system

In a device for performing observation with a charged particle microscope at an atmospheric pressure using a diaphragm, while there was a demand that a distance between the diaphragm and a sample be reduced as much as possible, there was a problem that a limit for how close the diaphragm and the sample can be brought to each other was unknown in the past. In the present invention, a height adjustment member is used, and the position of a diaphragm in a charged particle beam device with respect to the height adjustment member is defined as the specific point of an optical device, so that the positional relationship between the height adjustment member and the diaphragm in the optical device is reproduced, and the height of a sample table with a Z-axis driving mechanism is adjusted so as to locate the surface of the sample at the position of the specific point of the optical device. According to this, the distance between the diaphragm and the sample can be safely and simply adjusted, and ...

MODULAR REACTOR FOR MICROWAVE PLASMA-ASSISTED DEPOSITION

L'invention porte sur un réacteur modulaire (1) de dépôt assisté par plasma microonde pour la fabrication de diamant de synthèse, ledit réacteur étant caractérisé en ce qu'il comprend au moins trois éléments de modulation, lesdits éléments de modulation étant sélectionnés parmi: une couronne (450) apte à être positionnée entre une première partie d'enceinte (430) et une deuxième partie d'enceinte (440); un module de porte substrat (500), mobile en translation verticale et en rotation, en contact avec un quart d'onde (501) et comportant au moins un système de refroidissement fluide (520); un plateau (900) mobile en translation verticale de façon à modifier la forme et le volume de la cavité résonante (41) et comportant des ouvertures traversantes (911) permettant le passage des gaz; - un module de distribution des gaz (100), comportant une plaque de distribution des gaz amovible (110) comprenant une surface interne (111), une surface externe (112) et une pluralité de buses de distribution ...

Ion implantation method and apparatus

Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.

INSTALLATION AND PROCEEDED OF NANO-FABRICATION

NANOFABRICATION INSTALLATION AND PROCESS

Nanofabrication installation comprising: a specimen holder, for holding a specimen; a mask, having a through-opening between the upper and lower faces of the mask, for letting charged particles through onto the specimen holder; a near-field detection device for detecting a relative position between the mask (8) and the specimen holder (3); and a displacement device for generating a relative movement between the mask (8) and the specimen holder (3) independently of the relative position between the source (1) and the mask (8), the mask including at least a first electrode in the through-opening (10).

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus equipped with a height detection system includes an electron beam unit emitting an electron beam to the specimen, and a height detection system for detecting height of the specimen which is set on a table. The height detection system includes an illumination system configured to direct first and second beams of light through a mask with a multi-slit pattern to a surface of the specimen at substantially opposite azimuth angles and at substantially equal angles of incidence, first and second detectors which respectively detect first and second multi-slit images of the first and second beams reflected from the specimen and generate output signals thereof, and a device which receives the output signals and generates a comparison signal which is responsive to the height of the specimen. An objective lens of the electron beam unit is controlled in accordance with the comparison signal.

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus including a table which mounts a specimen and is movable in three dimensional directions, an electron beam optical system irradiating an electron beam onto a specimen and for detecting a secondary electron emanated from the specimen by the irradiation of the electron beam, and a surface height detection system for detecting height of the surface of the specimen mounted on the table. A focus control system controls a relative position between a focus position of the electron optical system and the table in accordance with information of the height, and an image processing system obtains an image from the detected secondary electron and processes the obtained image to detect a defect on the surface of the specimen.

Ion implantation method and apparatus

Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.

Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features

A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.

Plasma processing apparatus

Plasma processing apparatus

Electron beam inspection apparatus stage positioning

Charged particle beam application apparatus

The present invention enables the same target to be precisely machined and observed in a short time when a focal distance of a charged particle beam is changed or if the focal distances of charged particle beams are not equal on a sample. The present invention provides a charged particle beam application apparatus having a stage device used to move a sample in at least three axial directions, a charged particle beam optical system having an optical axis inclined from a surface of the sample to irradiate the sample with a charged particle beam, and a display device that displays an image formed by the charged particle beam optical system, the apparatus including a correction table indicating a relationship between both focal distance and optical conditions for said charged particle beam optical system and a position of the sample, and an arithmetic section that calculates the position of the sample, the arithmetic section calculating the amount of correction for the position of the sample ...

Direct lift cathode for lithography mask chamber

Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing chambers may include a cover ring positioned atop the substrate support. The cover ring may define a rectilinear substrate seat. A top surface of the rectilinear substrate seat may be elevated above the top surface of the substrate support. An outer periphery of the rectilinear substrate seat may be positioned outward of the plurality of lift pins.

ION IMPLANTATION METHOD AND APPARATUS

PROBLEM TO BE SOLVED: To improve a throughput by controlling accumulation of loss time with acceleration and deceleration time of scanning the substrate at around the scanning end as a main cause. SOLUTION: The ion implantation method has a step in which using a beam current of ion beams 4 and a dose amount to a substrate 2, the scanning speed of the substrate 2 for achieving the dosage is calculated, and a step in which by determining whether the scanning speed is in a permissible range of scanning speed, if it is in that range, the number of times of scanning and the scanning speed are made respectively a practical number of times of scanning and a practical scanning speed, and when it is larger than the upper limit, treatment is stopped, and if it is smaller than the lower limit, the number of times of scanning is increased by one, and the corrected number of times of scanning after correction is calculated and using the number of times of scanning after correction, the scanning speed ...

ION IMPLANTATION METHOD AND APPARATUS

PROBLEM TO BE SOLVED: To improve a throughput by preventing that the number of times of scanning becomes an odd number and by eliminating a loss time when the number of times of scanning is in odd number. SOLUTION: Using a beam current of ion beams 4, a dose amount to a substrate 2, and a reference scanning speed, the number of times of scanning of the substrate 2 for achieving the dosage is calculated by an integral value obtained by omitting decimal point or less, and by determining whether the number of times of scanning is 2 or more, if it is smaller than 2, processing is stopped, and if it is 2 or more, the number of times of scanning is determined if it is an even number or an odd number, and when it is an even number, that scanning number of times is made a practical scanning number of times as it is, and when it is an odd number, the number of times of scanning of an even number smaller than it by one is obtained to make it a practical scanning number of times. By using the above ...

CHARGED PARTICLE BEAM IMAGING SYSTEM

PROBLEM TO BE SOLVED: To provide a charged particle beam imaging system capable of correctly measuring a sample surface profile and drawing an image with high accuracy. SOLUTION: The charged particle beam imaging system comprises: a height-measuring unit 40 where light Li radiated by a light source 41 is focused on a mask 2 by a projection lens 42, and then light Lr reflected off a surface of the mask 2 travels through a light-receiving lens 43 and goes into a light-receiving element 44; a signal processing unit 60; a height data processing unit 70; a deflection control unit 30; and an electron beam optical system 10. When the light-receiving element 44 detects a position of light, an output signal of the light-receiving element is sent to the height data processing unit 70 through the signal processing unit 60. The height data processing unit 70 produces height data Hr. If the amount of the light Lr is equal to or larger than a threshold, the height data processing unit 70 sends the height ...

Ion implantation method and ion implantation apparatus

Lithography device for wafer structuring - has wafer support table, SXM base with reference structure, and jibs, each with STM sensor

The structured wafer (6) has an adjusting structure and an integrated circuit structure. The wafer is placed on a wafer table (30) and an SXM base (20) with a reference adjusting structure is provided. There is a number of jib arms, each with an STM sensor. A device (42-44) moves the SXM base to be located parallel to the wafer. The adjusting structure and the reference adjusting structure are brought into mutual adjustment. A device (29) moves the STM sensor near to a position of preset distance to the wafer. Another device estimates the integrated circuit structure of the wafer, while a structure former provides the required structuring, using the STM sensor. USE/ADVANTAGE - For mfr. of semiconductor components, with facility of forming very fine thin films.

VERFAHREN UND VORRICHTUNG ZUR IONENSTRAHLBEARBEITUNG VON OBERFLÄCHEN

Adjustable implantation angle workpiece support structure for an ion beam implanter

Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features and systems using the same

A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.

SPUTTERING APPARATUS

A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit. 1. A sputtering apparatus comprising:a vacuum chamber;a substrate holder configured to arrange a substrate at a predetermined position in the vacuum chamber;a target support member configured to arrange a target so as to make the target face the substrate arranged by the substrate holder;a cathode magnet arranged on a side of the target support member, which is opposite to a side of the substrate;a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member;a target moving unit configured to adjust a distance between the target support member and the substrate; anda control unit configured to control the target moving unit and the magnet moving unit.2. The sputtering apparatus according to claim 1 , wherein the control unit adjusts a distance between the cathode magnet and the target support member in accordance with a change in power value applied to the target support member.3. The apparatus according to claim 1 , wherein the control unit adjusts a distance between the target support member and the substrate in accordance with integrated power applied to the target support member.4. The sputtering apparatus according to claim 1 , the control unit adjusts a distance between the target support member and the substrate in accordance with a distance between the cathode magnet and the target support member.5. The sputtering apparatus according to claim 1 , further comprising a magnet ...

Six-degree-of-freedom multi-axes positioning apparatus

A six-degree-of-freedom multi-axes positioning apparatus is comprised of a geometry of six independent angle connectors. Each angle connector connects two fixed length rods to a pivot on one of two opposing platforms. The combination of an angle connector, at least two pivots and at least two rods having free ends connected to the pivots comprises a leg assembly. The spatial location of the upper platform is changed in relation to the lower platform by angular changes within each angle connector. This angular change results in degrees of motion within the apparatus defined as X, Y, Z, Tip, Tilt, and Rotation, or a combination of the above. This invention is known as a ROTOPOD.

Method and apparatus for creating a topography at a surface

Methods and apparatus whereby an optical interferometer is utilized to monitor and provide feedback control to an integrated energetic particle column, to create desired topographies, including the depth, shape and/or roughness of features, at a surface of a specimen. Energetic particle columns can direct energetic species including, ions, photons and/or neutral particles to a surface to create features having in-plane dimensions on the order of 1 micron, and a height or depth on the order of 1 nanometer. Energetic processes can include subtractive processes such as sputtering, ablation, focused ion beam milling and, additive processes, such as energetic beam induced chemical vapor deposition. The integration of interferometric methods with processing by energetic species offers the ability to create desired topographies at surfaces, including planar and curved shapes.

Sample stage

Sample stage, e.g. for use in a scanning electron microscope. The sample stage includes a base, a sample carrier, and an actuator assembly arranged for moving the sample carrier in at least one direction substantially parallel to the base. The actuator assembly is arranged so as not to contribute to the mechanical stiffness of the sample stage from the sample carrier to the base.

Determining susceptor service life in a plasma processing chamber

In one embodiment of the invention, a method for predicting a susceptor's service life in a processing chamber is disclosed. The method begins by creating virtual sensors in a processing chamber having a susceptor. The virtual sensors monitor one or more parameters on the susceptor and the age of the susceptor is tracked throughout the susceptor's life in the processing chamber with the virtual sensors.

Electron beam size measuring apparatus and electron beam size measuring method

Workpiece height adjustment in an eletron beam lithography machine

Ion implantation method and apparatus

Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.

CHARGED PARTICLE BEAM WRITING APPARATUS

ADJUSTABLE IMPLANTATION ANGLE WORKPIECE SUPPORT STRUCTURE FOR AN ION BEAM IMPLANTER

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel. The translation member moves along a direction of movement such that a distance that the ion beam moves ...

REPLACEABLE AND/OR COLLAPSIBLE EDGE RING ASSEMBLIES FOR PLASMA SHEATH TUNING INCORPORATING EDGE RING POSITIONING AND CENTERING FEATURES

A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins. 1. A first edge ring for a substrate support , the first edge ring comprising: an upper surface,', 'a lower surface,', 'a radially inner surface, and', 'a radially outer surface; and, 'an annular-shaped body sized and shaped to surround an upper portion of the substrate support, wherein the annular-shaped body defines'}one or more lift pin receiving elements disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.2. The first edge ring of claim 1 , comprising three lift pin receiving elements disposed along the lower surface of the annular-shaped body.3. The first edge ring of claim 1 , wherein:the annular-shaped body comprises an inner diameter; andthe inner diameter is greater than an outer diameter of a top portion of the substrate support.4. The first edge ring of claim 1 , wherein the annular-shaped body is formed at least partially of a non-volatile material.5. The first edge ring of claim 1 , wherein the one or more lift pin receiving elements include at least one groove.6. The first edge ring of claim 1 , wherein the one or more lift pin receiving elements include at least one V-shaped groove.7. The first edge ring of claim 6 , wherein the at least one ‘V’-shaped groove comprises walls at 60-120° relative to each other.8. The first edge ring of claim ...

METHODS FOR DISCRETIZED PROCESSING AND PROCESS SEQUENCE INTEGRATION OF REGIONS OF A SUBSTRATE

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

SYSTEMS AND METHODS OF HYSTERESIS COMPENSATION

A positioning system can include a drive unit having an actuator element and a control system. The actuator element can include a piezoelectric material. The control system can be configured to select a path between a first position and a second position, identify at least one change of direction of the actuator element along the selected path, generate a hysteresis-compensated drive signal based at least in part on the change in direction, and apply the hysteresis-compensated drive signal to the actuator element to move an object along the path.

ELECTRON BEAM WRITING APPARATUS AND ELECTRON BEAM WRITING METHOD

PROBLEM TO BE SOLVED: To provide an electron beam writing apparatus and an electron beam writing method which correct the influence of a deviation of height of a mask without increasing an adjustable range of a focal height of a focal adjustment mechanism when holding the mask M at the back surface thereof. SOLUTION: A Z stage 5 is placed on an XY stage 3 in avoidance of an area to which a mark table 4 is fixed. The mask M is placed on a holding mechanism 6 provided on the Z stage 5. A middle value of the range adjustable by the focal adjustment mechanism is made coincident with the height of the mark table 4. The height of the mark table 4 is measured and the heights of plural measurement points of the mask M are measured. The Z stage 5 is moved in such a manner that the height of a middle value between highest and lowest values of the heights of these measurement points coincides with the height of the mark table 4. COPYRIGHT: (C)2010,JPO&INPIT ...

Electron beam magnitude measuring device i.e. electron microscope, for testing sample i.e. calibration sample, has measuring unit measuring distance, where control voltage is defined such that potential of surface takes constant level

The device (100) has a sample (7) attached to an XYZ-stage (1), and a control unit (20) positioning a height of the XYZ-stage in such a manner that a complete distance measured by a distance measuring unit (50) is equal to a fixed firm distance. A control voltage is applied to a secondary electron control electrode of a collection unit. The voltage is defined in such a manner that a potential of a sample surface takes a constant level, when a sample (7) is positioned in a fixed distance, where an electron beam is radiated by a creation of a fixed accelerating voltage. An independent claim is also included for a method for magnitude measurement of an electron beam.

ION INJECTION METHOD AND AN APPARATUS CAPABLE OF REMOVING THE TIME LOSS IN CASE OF THE SCAN COLLECTION WHICH IS THE ODD NUMBER

PURPOSE: An ion injection method and an apparatus are provided to improve the treatment quantity by making the frequency of scan collection of substrate to the even number. CONSTITUTION: An ion implantation apparatus comprises a control device(30) having the computation performing control function and a beam current measurement apparatus(32) measuring the beam current of the ion beam(4). The standards scan speed used for the scan collection computation of the substrate, the beam current of the ion beam, and the dose amount about the substrate(2) are provided to the control device. The beam current measurement apparatus is the faraday cup. The beam current measurement apparatus measures the beam current by accepting the ion beam performing the ion implantation to substrate. The control device controls a scan device(18) comprising the substrate drive unit, a twist motor(14) and a tilt motor(16). © KIPO 2009 ...

Charged Particle Beam Device

The present disclosure is to provide a charged particle beam device capable of achieving both high resolution by setting of a short WD and improvement of detection efficiency when setting a long WD. According to an aspect for achieving the above-described object, there is suggested a charged particle beam device including: an objective lens for converging a charged particle beam emitted from a charged particle source; a sample stage having a first driving mechanism for moving a sample to be irradiated with the charged particle beam between a first position and a second position more separated from the objective lens than the first position; a detection surface for detecting charged particles emitted from the sample; and a second driving mechanism for moving the detection surface between within a movable range of the sample between the first position and the second position and out of the movable range of the sample.

Multiple working distance height sensor using multiple wavelengths

A system is disclosed. The system includes a stage assembly configured to receive a specimen and maintain a height of the specimen at a first working distance height during a first characterization mode and an additional working distance height during an additional characterization mode. The system further includes an illumination source configured to generate an illumination beam. The system further includes an illumination arm including a set of optical elements configured to direct a portion of the illumination beam including illumination of a first wavelength to the specimen during the first characterization mode, and direct a portion of the illumination beam including illumination of an additional wavelength to the specimen during the additional characterization mode. The system further includes a detector assembly configured to receive illumination emanated from the specimen, and a controller configured to determine a specimen height value based on the illumination received by the ...

Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus

An electron beam apparatus includes a movable table which mounts a specimen, an electron optical system including an electron beam source which emits electron beams, an element for deflecting the emitted electron beams, an objective lens for converging and irradiating the deflected electron beams onto the specimen mounted on the table, and a detector for detecting a secondary electron emanated from the specimen by the irradiation of the electron beams. A surface height detection unit is provided which optically detects a height of a surface of the specimen by projecting light onto the surface of the specimen from an oblique direction to the surface and detecting light reflected from the specimen. A focus controller is provided for focusing the electron beam onto the surface of the specimen by controlling a position of the table in a height direction in accordance with the height information from the surface height detection unit.

Transmission scanning microscopy including electron energy loss spectroscopy and observation method thereof

An object of the present invention relates to high-resolution observation on a light field STEM, a dark field image STEM, and an EELS, at a low acceleration voltage. The present invention relates to controlling on incorporation angles of a STEM detector and an electron energy loss spectroscopy by changing the disposition of a sample with respect to an optical axis direction of a primary electron beam in a scanning transmission microscopy including an electron energy loss spectroscopy. According to the present invention, it is possible to easily control an optimum scattering angle in each of a light field STEM, a dark field STEM, and an EELS while suppressing occurrence of chromatic aberration accompanying the controlling on the incorporation angle.

Opto-mechanische automatische Fokussieranlage und Verfahren

Methods for discretized processing and process sequence integration of regions of a substrate

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction. 113-. (canceled)14. A plasma processing apparatus comprising:a processing container;a stage provided in the processing container;a dielectric plate provided above the stage via a space in the processing container;an upper electrode having flexibility and being provided above the dielectric plate, the upper electrode being configured to provide a gap between the dielectric plate and the upper electrode;an introduction part of radio frequency waves that are VHF waves or UHF waves, the introduction part being provided at a horizontal end portion of the space;a driving shaft that is a central axial line of the processing container extending in a vertical direction and is coupled to the upper electrode on the central axial line including a center of the stage; andan actuator configured to move the driving shaft in the vertical direction.15. The plasma processing apparatus of claim 14 , further comprising:an elastic member interposed between a peripheral edge portion of the dielectric plate and the processing container,wherein the peripheral edge portion of the dielectric plate is elastically supported between the processing container and the upper ...

LIFT PIN INTERFACE IN A SUBSTRATE SUPPORT

Methods and apparatus for lift pin interfaces for electrostatic chucks are provided herein. In some embodiments, a lift pin interface in an electrostatic chuck includes: a dielectric plate having a support surface for a substrate; a conductive plate disposed beneath the dielectric plate and having an opening formed therethrough, wherein the dielectric plate includes a protrusion extending into the opening in the conductive plate; and a lift pin guide disposed in the opening, wherein the lift pin guide includes one or more features that extend from an upper surface of the lift pin guide and that overlap with the protrusion of the dielectric plate. 1. A lift pin interface in an electrostatic chuck , comprising:a dielectric plate having a support surface for a substrate;a conductive plate disposed beneath the dielectric plate and having an opening formed therethrough, wherein the dielectric plate includes a protrusion extending into the opening in the conductive plate; anda lift pin guide disposed in the opening, wherein the lift pin guide includes one or more features that extend from an upper surface of the lift pin guide and that overlap with the protrusion of the dielectric plate, and wherein the lift pin guide includes a passageway to accommodate a lift pin.2. The lift pin interface of claim 1 , wherein the one or more features include a shoulder.3. The lift pin interface of claim 2 , wherein the protrusion in the dielectric plate includes a countersink that mates with the shoulder.4. The lift pin interface of claim 2 , wherein the one or more features include a single inner shoulder disposed around the passageway.5. The lift pin interface of claim 2 , wherein the one or more features include a single outer shoulder that surrounds the protrusion.6. The lift pin interface of claim 1 , further comprising:an o-ring disposed on the upper surface of the lift pin guide between the lift pin guide and the protrusion.7. The lift pin interface of claim 1 , wherein the one ...

PROCESSING METHOD, PLACING PEDESTAL, PLASMA PROCESSING APPARATUS, AND RECORDING MEDIUM

A processing method includes a), b), and c). The a) includes measuring a load imposed on a lift pin when the lift pin lifts a processed substrate from an electrostatic chuck holding the substrate. The b) includes calculating a difference of the load is calculated based on the measured load and an initial load imposed on the lift pins when the lift pins lift the substrate without any residual adsorption force between the electrostatic chuck and the substrate. The c) includes exposing a surface of the electrostatic chuck to first plasma when the difference of the load is equal to or greater than a preset first threshold. 1. A processing method comprising:a) measuring a load imposed on a lift pin when the lift pin lifts a processed substrate from an electrostatic chuck holding the substrate;b) calculating a difference of the load based on the measured load, and an initial load imposed on the lift pin when the lift pin lifts the substrate without any residual adsorption force between the electrostatic chuck and the substrate; andc) exposing a surface of the electrostatic chuck to first plasma when the difference of the load is equal to or greater than a preset first threshold.2. The processing method according to claim 1 , wherein the first threshold is a value smaller than a difference between the initial load and a load imposed on the lift pin at which the substrate jumps when the lift pin lifts the substrate.3. The processing method according to claim 1 , wherein the first plasma is plasma generated by turning nitrogen-containing gas into plasma.4. The processing method according to claim 1 , further comprising:d) measuring an electric charge in the substrate using a sensor provided to a tip of the lift pin, the tip being on a side that is brought into contact with the substrate, when the lift pin lifts the processed substrate from the electrostatic chuck;e) calculating a difference of the electric charge based on the measured electric charge and an initial electric ...

Stage Device, Charged Particle Beam Apparatus, and Vacuum Apparatus

The problem addressed by the present disclosure is to provide a stage device, a charged particle beam device, and a vacuum device, with which it is possible to increase the speed and the acceleration of positioning and to suppress the leakage of a magnetic field. As a means to resolve this problem, a stage device 100 comprises a support stage 10, a floating mechanism 20, and a movement stage 30. The movement stage 30 has a propulsion-applying unit 36, and the support stage 10 has a propulsion-receiving unit 11. The stage device 100 is configured so that when the movement stage 30 moves and the propulsion-applying unit 36 contacts or approaches the propulsion-receiving unit 11, the propulsion-applying unit 36 applies propulsion in the movement direction to the propulsion-receiving unit 11.

LIFT PIN ALIGNMENT METHOD AND ALIGNMENT APPARATUS AND SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus and a lift pin alignment apparatus, the substrate processing apparatus including a chamber; a substrate plate on which the substrate is seatable; a plurality of movable lift in the substrate plate to support the substrate; a leveling sensor configured to be loadable in the chamber on the lift pins; a controller configured to receive measurement values of roll (φ) and pitch (θ) of a plane of the lift pins to calculate a rotation matrix (T) of the plane from the measurement values of roll (φ) and pitch (θ), and to calculate travel distances of the lift pins for leveling the plane to be parallel with a horizontal reference plane by using the rotation matrix (T) and to output a lift pin control signal for aligning the lift pins; and a lift pin driver to move the lift pins according to the lift pin control signal. 1. A substrate processing apparatus , comprising:a chamber to provide a space for processing a substrate;a substrate plate within the chamber and on which the substrate is seatable;a plurality of lift pins protruding from within the substrate plate to support the substrate, the plurality of lift pins being configured to move upwardly and downwardly;a leveling sensor configured to be loadable in the chamber on the plurality of lift pins that protrude from the substrate plate;a controller configured to receive measurement values of roll (φ) and pitch (θ) representing an angle of a plane of the plurality of lift pins from the leveling sensor to calculate a rotation matrix (T) of the plane from the measurement values of roll (φ) and pitch (θ), to calculate travel distances of the lift pins for leveling the plane to be parallel with a horizontal reference plane by using the rotation matrix (T), and to output a lift pin control signal for aligning the plurality of lift pins in a horizontal plane; anda lift pin driver configured to move the plurality of lift pins according to the lift pin control signal.2. The substrate processing ...

SCANNING ELECTRON MICROSCOPE AND IMAGE PROCESSING APPARATUS

In this invention, information of material composition, process conditions and candidates of crystal structure either known or imported from material database is used to determine sample stage tilt angle and working distance (WD). Under these determined tilt angle and WD, the intensity of the electrons emitted at different angles and with different energies is measured using a scanning electron microscope (SEM) system comprising: a use of materials database containing materials composition, formation process, crystal structure and its electron yield; a sample stage that is able to move, rotate and tilt; an processing section for calculating optimum working distance for an observation from material database and measurement condition; means for acquiring an image of crystal information of a desired area of a sample based on an image obtained from SEM observation. 1. A scanning electron microscope (SEM) comprising:a sample stage for mounting a sample;a detector for detecting an electron emitted from the sample;an SEM control section for controlling a distance between the sample stage and the detector;a memory, which stores:a material database storing a plurality of datasets comprising information associated with a material, information of a crystal structure of the material, and information of an electron emitted from the material; andfirst relationship between the information of electron emitted from the material, the distance, and a signal detected by the detector.2. The system of claim 1 , wherein the SEM control section calculates the distance between the sample stage and the detector based on the first relationship and the material database.3. The system of claim 2 , wherein the SEM control section calculates the distance having maximum length that provides the signal greater than a predetermined threshold value.4. The system of claim 2 , wherein the information associated with the material includes at least material composition information and formation process ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING CONTROL METHOD

A substrate processing apparatus includes a first mounting unit, a second mounting unit and an adjusting unit. The first mounting unit is configured to mount thereon a target substrate to be processed that is a plasma processing target. The second mounting unit is disposed to surround the first mounting unit to mount thereon a focus ring. The adjusting unit is configured to adjust a height of a peripheral portion of the target substrate with respect to a height of a central portion of the target substrate in response to consumption of the focus ring. 1. A substrate processing apparatus comprising:a first mounting unit configured to mount thereon a target substrate to be processed that is a plasma processing target;a second mounting unit disposed to surround the first mounting unit and configured to mount thereon a focus ring; andan adjusting unit configured to adjust a height of a peripheral portion of the target substrate with respect to a height of a central portion of the target substrate in response to consumption of the focus ring.2. The substrate processing apparatus of claim 1 , wherein the first mounting unit is formed in a disk shape and concentrically divided into a plurality of regions claim 1 , andthe adjusting unit includes:a thickness variable layer disposed at least below each of one or more regions, which correspond to a peripheral portion of the first mounting unit, among the plurality of regions, wherein the thickness variable layer has a thickness that varies due to shrinkage occurring depending on a temperature;a heater disposed to correspond to the thickness variable layer; anda control unit configured to control the heater to heat the thickness variable layer in response to the consumption of the focus ring.3. The substrate processing apparatus of claim 2 , wherein at least one of the one or more regions corresponding to the peripheral portion of the first mounting unit among the plurality of regions is further divided into multiple regions in ...

SAMPLE HOLDER FOR ELECTRON MICROSCOPY

A sample holder for electron microscopy of air-sensitive samples for use in electron microscopy incorporates a housing and a closure assembly. The closure assembly comprises a lid comprising at least one closure arm receiving portions recessed within a flat, planar upper surface thereof. The housing comprises one or more closure arm(s) corresponding to one or more closure arm receiving portion(s). In a fully closed position, the closure arm(s) share contact with the closure arm receiving portion(s). The lid is flexibly coupled to a motor cover plate which can be actuated by a motor assembly configured to open and close the lid. The sample holder also includes an elevator assembly with a vertically adjustable sample stage which sits below the lid. The sample stage is vertically adjusted by actuation of a bellows assembly which sits beneath the sample stage. 1. A sample holder for focused ion beam scanning electron microscopy , comprising:a housing; a lid comprising one or more closure arm receiving portions and a flat, planar upper surface, and', 'wherein the one or more closure arm receiving portions are recessed from the upper surface., 'a closure assembly coupled to the housing, comprising2. The sample holder of claim 1 , wherein each of the one or more closure arm receiving portions comprise a ramp and a groove.3. The sample holder of claim 2 , further comprising:one or more closure arms corresponding to the one or more closure arm receiving portions, each closure arm comprising a diagonal surface complimentary to the corresponding ramp and a downward convex surface complimentary to the groove.4. The sample holder of claim 3 , wherein when the lid is in a fully closed position claim 3 ,the diagonal surface(s) is/are in face-sharing contact with the ramp(s) and the downward convex surface(s) is/are in face-sharing contact with the groove.5. The sample holder of claim 4 , wherein the lid is flexibly coupled to a motor cover plate configured to receive a drive shaft ...

SAMPLE HOLDER FOR ELECTRON MICROSCOPY

A sample holder for electron microscopy of air-sensitive samples for use in electron microscopy incorporates a housing and a closure assembly. The closure assembly comprises a lid comprising at least one closure arm receiving portions recessed within a flat, planar upper surface thereof. The housing comprises one or more closure arm(s) corresponding to one or more closure arm receiving portion(s). In a fully closed position, the closure arm(s) share contact with the closure arm receiving portion(s). The lid is flexibly coupled to a motor cover plate which can be actuated by a motor assembly configured to open and close the lid. The sample holder also includes an elevator assembly with a vertically adjustable sample stage which sits below the lid. The sample stage is vertically adjusted by actuation of a bellows assembly which sits beneath the sample stage. 1a housing; a sample stage,', a bellows coupled to the underside of the sample stage and a flange;', 'a bellows gear coupled to the flange via a driveshaft; and, 'a bellows assembly comprising, 'a first motor assembly configured to rotate the bellows gear via a coupling gear;, 'an elevator assembly, comprisinga closure assembly positioned over an opening in the housing over the sample stage; and 'wherein the closure assembly exerts a downward pressure on the lid to seal the opening.', 'a lid slidable between the housing and the closure assembly and actuatable by a second motor assembly,'}. A sample holder for focused ion beam scanning electron microscopy, comprising: This application is a continuation application of U.S. patent application Ser. No. 16/944,979 filed Jul. 31, 2020, which claims priority to U.S. Provisional Patent Application No. 62/882,496 filed Aug. 3, 2019, the entire disclosures of which are expressly incorporated by reference.The present description relates generally to sample holders for performing in-situ experiments using electron microscopy, in particular focused ion beam scanning electron ...

SEMICONDUCTOR PROCESSING CHAMBERS FOR DEPOSITION AND ETCH

Exemplary semiconductor substrate supports may include a pedestal having a shaft and a platen. The semiconductor substrate supports may include a cover plate. The cover plate may be coupled with the platen along a first surface of the cover plate. The cover plate may define a recessed channel in a second surface of the cover plate opposite the first surface. The semiconductor substrate supports may include a puck coupled with the second surface of the cover plate. The puck may incorporate an electrode. The puck may define a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate. 1. A semiconductor substrate support comprising:a pedestal having a shaft and a platen;a cover plate, wherein the cover plate is coupled with the platen along a first surface of the cover plate, and wherein the cover plate defines a recessed channel in a second surface of the cover plate opposite the first surface; anda puck coupled with the second surface of the cover plate, the puck incorporating an electrode, wherein the puck defines a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate.2. The semiconductor substrate support of claim 1 , wherein the platen defines a fluid channel across the platen.3. The semiconductor substrate support of claim 1 , wherein the recessed channel is a first recessed channel claim 1 , wherein the cover plate defines a second recessed channel radially outward of the first recessed channel claim 1 , wherein the first recessed channel is fluidly accessed from a first lateral channel defined in the cover plate claim 1 , and wherein the second recessed channel is fluidly accessed from a second lateral channel defined in the cover plate.4. The semiconductor substrate support of claim 3 , further comprising:a first channel cover seated on the first recessed channel, the first channel cover defining a plurality of ...

SEMICONDUCTOR PROCESSING CHAMBERS FOR DEPOSITION AND ETCH

Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft. 1. A semiconductor substrate support comprising:a pedestal shaft;a platen, wherein the platen defines a fluid channel across a first surface of the platen;a platen insulator positioned between the platen and the pedestal shaft;a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support; anda conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.2. The semiconductor substrate support of claim 1 , further comprisingan insulative edge ring seated on a recessed ledge of the conductive puck, wherein the insulative edge ring extends radially outward along an exterior edge of the platen insulator, and wherein the insulative edge ring contacts the conductive shield.3. The semiconductor substrate support of claim 2 , wherein the conductive puck includes a coating along a surface configured to contact the substrate claim 2 , wherein the coating extends along the recessed ledge on which the insulative edge ring is seated.4. The semiconductor substrate support of claim 3 , wherein the coating comprises a similar insulative material of which the insulative edge ring is composed.5. The ...

PLASMA PROCESSING APPARATUS

According to one embodiment, a plasma processing apparatus includes a processing container processing a substrate, a power supply supplying an electric power into the processing container to generate plasma, an upper electrode arranged inside the processing container, a substrate mounting table including a lower electrode opposed to the upper electrode, and placing the substrate thereon, an edge ring arranged at an outer peripheral portion of the substrate mounting table to surround an periphery of the substrate, and a drive mechanism driving at least part of the edge ring up and down. The edge ring includes a lower ring mounted on the outer peripheral portion of the substrate mounting table, an upper ring mounted on the lower ring to be movable up and down by the drive mechanism, and an auxiliary ring arranged at a lower surface of the upper ring to be movable up and down together with the upper ring, and including a surface facing a side to be opened to an inside of the processing container. 1. A plasma processing apparatus comprising:a processing container processing a substrate;a power supply supplying an electric power into the processing container to generate plasma;an upper electrode arranged inside the processing container;a substrate mounting table including a lower electrode opposed to the upper electrode, and placing the substrate thereon;an edge ring arranged at an outer peripheral portion of the substrate mounting table to surround an periphery of the substrate; anda drive mechanism driving at least part of the edge ring up and down,wherein the edge ring includesa lower ring mounted on the outer peripheral portion of the substrate mounting table,an upper ring mounted on the lower ring to be movable up and down by the drive mechanism, andan auxiliary ring arranged at a lower surface of the upper ring to be movable up and down together with the upper ring, and including a surface facing a side to be opened to an inside of the processing container.2. The ...

Method for Electron Tomography

The invention relates to an improved method of electron tomography. Electron tomography is a time consuming process, as a large number of images, typically between 50-100 images, must be acquired to form one tomogram. The invention teaches a method to shorten the time needed to acquire this amount images much more quickly by tilting the sample continuously, instead of step-by-step. Hereby the time needed to reduce vibrations between steps is eliminated. 1. A method of performing electron tomography on a sample , said sample mounted on a sample holder in an electron microscope , the electron microscope comprising an electron source for generating a beam of energetic electrons along an optical axis and optical elements for focusing and deflecting the beam so as to irradiate the sample with a beam of electrons , the sample holder capable of orienting and tilting the sample with respect to the electron beam , the method comprising: the tilt angle is changed continuously while acquiring the tilt series of images, and', 'a position of the sample is changed continuously to keep the sample on the optical axis., 'acquiring a tilt series of images by irradiating the sample with the beam of electrons, each image acquired at an associated unique tilt angle, the images recorded on a camera with a read-out speed, wherein22. The method of claim 1 , wherein the sample is imaged on a pixilated camera claim 1 , and a velocity of the tilt angle claim 1 , expressed in degrees per second claim 1 , and the read-out speed of the camera claim 1 , expressed in frames per second claim 1 , are matched so that a displacement of the image due to a tilt change during one frame is less than one pixel.3. The method of claim 2 , wherein the velocity of the tilt is modulated.4. The method of claim 1 , wherein a shift and/or rotational correction of the images forming the tilt series is applied relative to each other.5. The method of claim 4 , wherein the shift and/or rotational correction is based ...

Examination container and electron microscope

An examination container includes a main body, a cover and a carrier stage. The main body has an accommodating trough for holding a sample. The cover is detachably connected to the main body to close the accommodating trough. The cover has a first through-hole penetrating through an outer surface and an inner surface of the cover, and includes a membrane arranging on the inner surface of the cover. The membrane has a second through-hole opposite to the first through-hole for passing a charged particle beam through the first through hole and the second through hole. The carrier stage is installed in a position corresponding to the second through-hole. The carrier stage is detachably arranged in the accommodating trough for a variety of examination purposes. An electron microscope using the abovementioned examination container is also disclosed.

MODULAR REACTOR FOR MICROWAVE PLASMA-ASSISTED DEPOSITION

The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device. 1. A microwave plasma-assisted modular deposition reactor for manufacturing synthetic diamond , said reactor comprising:a microwave generator configured to generate microwaves, the frequency of which is between 300 MHz and 3000 MHz,a resonant cavity formed, at least in part, by cylindrical inner walls of a reactor enclosure,a gas inlet system adapted to supply gases within the resonant cavity,a gas output module adapted to remove said gases from the resonant cavity,a wave coupling module adapted to transfer the microwaves from the microwave generator to the resonant cavity in order to allow the formation of a plasma,a growth support present in the resonant cavity, andat least three modulation elements, said modulation elements each being selected from:a crown adapted to be positioned between a first enclosure part and a second enclosure part in order to change a shape and/or volume of the resonant cavity, and a seal system, allowing for the ...

MULTI-SOURCE ION BEAM ETCH SYSTEM

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit. 1. A multi-source ion beam etching (IBE) system , comprising:a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor;a plurality of IBE sources coupled to the multi-source adaptor;a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body;at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages a bottom portion of the IBE sources on the opposite end of the beam conduit;a lower processing chamber having a substrate support pedestal, wherein the lower processing chamber is coupled to the lower chamber adaptor; anda rotating lift mechanism coupled to the lower processing chamber configured to rotate, lift and tilt the substrate support pedestal.2. The multi-source IBE system of claim 1 , wherein the multi-source adaptor secures the plurality of IBE sources to the multi-source lid.3. The multi-source IBE system of claim 1 , wherein the multi-source adaptor includes a body and a plurality of openings about which ...

PLASMA PROCESSING APPARATUS

In a plasma processing apparatus, a table has a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes. The peripheral segment has an upper surface lower than that of the wafer support. An outer focus ring is disposed over the peripheral segment and has a recess or a cutout at an inner portion of the outer focus ring, and the recess or cutout has through-holes. An inner focus ring is disposed in the recess or cutout of the outer focus ring. Lift pins respectively extend through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring. Shift mechanisms control shift of the respective lift pins. 1. A plasma processing apparatus comprising:a table having a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes, the peripheral segment having an upper surface lower than that of the wafer support;an outer focus ring disposed over the peripheral segment and having a recess or a cutout at an inner portion of the outer focus ring, the recess or cutout having through-holes;an inner focus ring disposed in the recess or cutout of the outer focus ring;lift pins respectivley extending through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring; andshift mechanisms to control shift of the respective lift pins.2. The apparatus of claim 1 , wherein the lift pins are in contact with the inner focus ring during plasma processing.3. The apparatus of claim 1 , wherein each of the shift mechanisms is capable of verically shifting the corresponding lift pin with a first shift precision of about 0.02 mm at a pitch of 1 mm to 2 mm and a second shift precision of about 0.1 mm at a pitch of 20 mm.4. The apparatus of claim 1 , wherein each of the shift mechanisms includes:a driver;a thruster coaxially connected to the corresponding lift pin; anda transmitter configured ...

Dry Ashing by Secondary Excitation

An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate. 1. An apparatus comprising:a plasma source generator configured to generate a plasma from a first gas in a first chamber;a first gas source configured to provide the first gas to the first chamber;a first gas distribution plate (GDP) interposed between the first chamber and a second chamber, the first GDP configured to limit plasma from the first chamber to the second chamber;a second GDP interposed between the second chamber and a third chamber, the second GDP comprising first holes, the first holes being through holes;a second gas source configured to provide a second gas to the third chamber; anda pedestal disposed in the third chamber, the pedestal configured to retain a wafer.2. The apparatus of claim 1 , wherein the pedestal is configured to move the wafer up or down.3. The apparatus of claim 1 , wherein the second GDP comprises a plurality of gas supply holes formed in a bottom of the second GDP claim 1 , wherein the second gas source is coupled to the plurality of gas supply holes.4. The apparatus of claim 3 , wherein the first holes have a first width and the gas supply holes have a second width claim 3 , the second width being smaller than the first width.5. The apparatus of claim 1 , wherein a distance between the first GDP and the second GDP is configured by vertically moving the first GDP or the second GDP.6. The apparatus of claim 1 , wherein the first GDP and the second GDP are grounded.7. The apparatus of claim 1 , wherein the pedestal is configured to retain the wafer while radicals of the first gas energize the second gas ...

COAXIAL LIFT DEVICE WITH DYNAMIC LEVELING

Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate. 1. A lift assembly , comprising:a pedestal having a substrate supporting surface and a sidewall that defines an outer dimension of the pedestal;a bottom bowl lift comprising:a bottom bowl comprising a wall having an inner dimension that is larger than the outer dimension of the pedestal;a bottom bowl carrier that is configured to support the bottom bowl;a bottom bowl actuator assembly configured to cause the bottom bowl carrier to translate in the first direction; and a pedestal carrier coupled to the pedestal; and', 'a plurality of actuators, wherein each of the plurality of actuators is coupled to a separate portion of the pedestal carrier, and the plurality of actuators are configured to cause relative linear and angular motion between the pedestal and the bottom bowl when one or more of the plurality of actuators causes at least a portion of the pedestal carrier to translate in the first direction., 'a pedestal lift comprising2. The lift assembly of claim 1 , wherein the bottom bowl carrier and the pedestal carrier are attached together via a bellows claim 1 , the bellows forming a seal ...

METHOD OF CLEANING STAGE IN PLASMA PROCESSING APPARATUS, AND THE PLASMA PROCESSING APPARATUS

A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage. 1. A method of cleaning a stage in a plasma processing apparatus comprising the stage on which a substrate is placed , a lifting mechanism configured to raise and lower the substrate with respect to the stage , and a high-frequency power supply connected to the stage , the method comprising:separating the stage and the substrate from each other using the lifting mechanism; andremoving a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage after the separating the stage and the substrate from each other,wherein, in the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.2. The method of claim 1 , wherein the separation distance between the stage and the substrate is smaller than a thickness of a sheath of the plasma generated in the removing the deposit.3. The method of ...

LIFT PIN HOLDER

Embodiments of lift pin holders are disclosed herein. In some embodiments, a lift pin holder includes a housing member having an upper portion and a lower portion, wherein the upper portion includes an annular wall defining a central space; a support member disposed at least partially within the central space and having a base and an upwardly protruding portion configured to support a lift pin; a first gripper disposed atop the support member and having a first plurality of prongs protruding upward from a body of the first gripper and configured to grip the lift pin; and a second gripper disposed atop the base of the support member and having a second plurality of prongs protruding upward from a body of the second gripper and are configured to grip the lift pin, wherein the first gripper is disposed within the third central opening. 1. A lift pin holder , comprising:a housing member having an upper portion and a lower portion, wherein the upper portion includes an annular wall defining a central space;a support member disposed at least partially within the central space and having a base and an upwardly protruding portion configured to support a lift pin;a first gripper disposed atop the support member and having a first plurality of prongs protruding upward from a body of the first gripper, wherein the first gripper includes a first central opening disposed between the first plurality of prongs and extending through body of the first gripper, wherein the first plurality of prongs are configured to grip the lift pin when extending into the first central opening, and wherein the upwardly protruding portion of the support member extends into the first central opening; anda second gripper disposed atop the base of the support member and having a second plurality of prongs protruding upward from a body of the second gripper, wherein the second gripper includes a second central opening disposed between the second plurality of prongs and a third central opening extending ...

Linear Motor for Vacuum and Vacuum Processing Apparatus

Since wires connected to a linear motor are routed in a vacuum sample chamber, outgassing is generated from wire coating and efficiency of assembly operations is reduced. Further, there is a problem that thrust generation efficiency of the linear motor is reduced when a gap between a coil and a permanent magnet of the linear motor cannot be small. In order to solve the above problems, a linear motor for vacuum is provided, the linear motor for vacuum including: a mover having a permanent magnet; and a stator having a support member to which a coil is fixed, in which the support member includes a vacuum sealing portion that vacuum seals with a wall surface of a vacuum sample chamber, and a feed-through for supplying a current to the coil provided in the vacuum sample chamber. 1. A linear motor for vacuum , comprising:a mover having a permanent magnet; anda stator having a support member to which a coil is fixed, whereinthe support member includes a vacuum sealing portion that vacuum seals with a wall surface of a vacuum sample chamber, and a feed-through for supplying a current to the coil provided in the vacuum sample chamber.2. The linear motor for vacuum according to claim 1 , whereinthe vacuum sealing portion includes an accommodation portion that accommodates an O-ring and a sealing surface in contact with the O-ring.3. The linear motor for vacuum according to claim 1 , whereinthe feed-through is a feed-through for supplying a cooling fluid that cools the coil.4. The linear motor for vacuum according to claim 1 , whereina wire for supplying the current or a pipe for supplying the cooling fluid is connected to the feed-through from an outside of the vacuum sample chamber through a through hole provided in the wall surface of the vacuum sample chamber.5. A vacuum processing apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the linear motor for vacuum according to , wherein'}the vacuum sealing portion vacuum seals with the wall surface of the ...

PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter. 1. A plasma processing apparatus comprising:a balun including a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal;a grounded vacuum container;a first electrode electrically connected to the first balanced terminal;a second electrode electrically connected to the second balanced terminal;an impedance matching circuit;a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun;a low-pass filter; anda second power supply configured to supply a voltage to the first electrode via the low-pass filter.2. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a target claim 1 , and the second electrode holds a substrate.3. The plasma processing apparatus according to claim 1 , wherein the balun includes a first coil configured to connect the first unbalanced terminal and the first balanced terminal claim 1 , and a second coil configured to connect the second unbalanced terminal and the second balanced terminal.4. The plasma processing apparatus according to claim 3 , wherein the balun further includes a third coil and a fourth coil both of which are connected ...

SUBSTRATE PROCESSING APPARATUS HAVING ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING METHOD

Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface. 1. A substrate processing apparatus comprising:a chamber;an upper cover provided inside the chamber;an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber; anda plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck,wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.2. The substrate processing apparatus according to claim 1 , wherein the plasma unit includes a shower plate provided below the upper cover so as to face the upper cover.3. The substrate processing apparatus according to claim 2 , wherein the upper cover is provided as a ground electrode.4. The substrate processing apparatus according to claim 1 , wherein the plasma unit includes a microwave plasma generating apparatus.5. The substrate processing apparatus according to claim 1 , wherein the plasma unit includes an inductively coupled plasma ...

SUBSTRATE PROCESSING APPARATUS

An inside of a processing vessel is set to be in a vacuum atmosphere when a substrate processing is performed. A sealing member is provided with a pipe-shaped cavity formed between a low-temperature region having a relatively low temperature and a high-temperature region having a relatively high temperature when the substrate processing is performed. The sealing member is configured to seal the processing vessel. 1. A substrate processing apparatus , comprising:a processing vessel whose inside is set to be in a vacuum atmosphere when a substrate processing is performed; anda sealing member provided with a pipe-shaped cavity formed between a low-temperature region having a relatively low temperature and a high-temperature region having a relatively high temperature when the substrate processing is performed, the sealing member being configured to seal the processing vessel.2. The substrate processing apparatus of claim 1 ,wherein the cavity is formed to cover at least a part of the low-temperature region near the high-temperature region or to cover at least a part of the high-temperature region near the low-temperature region.3. The substrate processing apparatus of claim 1 ,wherein the cavity is formed perpendicularly to a vector line indicating a flow of heat from the high-temperature region to the low-temperature region.4. The substrate processing apparatus of claim 1 ,wherein the cavity includes multiple cavities, and the multiple cavities are disposed in multiple rows and in parallel.5. The substrate processing apparatus of claim 1 , further comprising:a gas supply configured to supply an inert gas having a temperature higher than a temperature of the low-temperature region to allow the inert gas to flow from one end of the cavity to the other end thereof.6. The substrate processing apparatus of claim 5 , further comprising:a pipeline connected to the other end of the cavity and configured to guide the inert gas having passed through the cavity to a member ...

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A chamber is configured to process a substrate by using a plasma. A heater is disposed in a region within the chamber which is not exposed to the plasma and a radio frequency power supplied for plasma formation. A heater power supply is configured to supply a pulsed power to the heater. 1. A plasma processing apparatus , comprising:a chamber configured to process a substrate by using a plasma;a heater disposed in a region within the chamber which is not exposed to the plasma and a radio frequency power; anda heater power supply configured to supply a pulsed power to the heater.2. The plasma processing apparatus of claim 1 , further comprising:a substrate support configured to support the substrate;an exhaust port through which a gas within the chamber is exhausted; anda baffle plate disposed between an inner side surface of the chamber and the substrate support, and configured to partition the chamber into a processing space in which the substrate is processed and an exhaust space including the exhaust port,wherein the heater is disposed in the exhaust space.3. The plasma processing apparatus of claim 2 ,wherein the heater is disposed to surround the substrate support.4. The plasma processing apparatus of claim 1 , further comprising:a substrate support configured to support the substrate;an upper electrode disposed to face the substrate support;an elevator configured to move the upper electrode up and down between a ceiling of the chamber and the substrate support; anda cylindrical wall provided within the chamber to surround the substrate support and the upper electrode,wherein the heater is disposed in a space which is formed by an outer side of the cylindrical wall, the upper electrode and the ceiling of the chamber.5. The plasma processing apparatus of claim 1 ,wherein the heater is an infrared heater.6. The plasma processing apparatus of claim 1 , further comprising:a controller configured to control the heater power supply to perform a processing comprising: ...

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

A plasma processing apparatus for performing a plasma processing on a substrate within a processing container includes: an upper electrode disposed above the processing container; a cylindrical shield member provided on the processing container to support a matching device; a power feeding rod disposed inward of the shield member and for supplying a high-frequency power provided from a plasma source to the upper electrode via the matching device; a gas introduction member for supplying a processing gas heated outside the shield member into the processing container from above the upper electrode; and a sealing member provided outside the shield member and on a peripheral edge of a penetration portion of the shield member through which the gas introduction member penetrates, the sealing member made of a conductive material having a lower thermal conductivity than materials of the gas introduction member and the shield member. 1. A plasma processing apparatus for performing a plasma processing on a substrate within a processing container , comprising:an upper electrode disposed above the processing container;a cylindrical shield member provided on the processing container and configured to support a matching device;a power feeding rod disposed inward of the shield member and configured to supply a high-frequency power provided from a plasma source to the upper electrode via the matching device;a gas introduction member configured to supply a processing gas heated outside the shield member into the processing container from above the upper electrode; anda sealing member provided outside the shield member and on a peripheral edge of a penetration portion of the shield member through which the gas introduction met her penetrates, the sealing member being made of a conductive material having a lower thermal conductivity, than materials of the gas introduction member and the shield member,wherein the gas introduction member and the shield member are grounded to an earth.2. ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

A substrate processing apparatus includes: a processing chamber including a processing room; a heating unit that heats the processing chamber; a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and holds the substrate in the processing room; a stage peripheral member provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening; and a first positioning pin fixed to the processing chamber to position the stage peripheral member, and a second positioning pin fixed to a position farther than the first positioning pin. 1. A substrate processing apparatus comprising:a processing chamber including a processing room configured to process a substrate;a heater configured to heat the processing chamber;a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and configured to hold the substrate in the processing room, the reference position being a position where the base is fixed with respect to the processing chamber;a stage peripheral provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening;a first positioning pin fixed to the processing chamber to position the stage peripheral; anda second positioning pin fixed to a position farther than the first positioning pin when viewed from the reference position in plan view, a first hole into which the first positioning pin is inserted in order to fix the stage peripheral with respect to the processing chamber; and', 'a second hole into which the second ...

DISPLACEMENT MEASURING APPARATUS, ELECTRON BEAM INSPECTION APPARATUS, AND DISPLACEMENT MEASURING METHOD

A displacement measuring apparatus includes an illumination system to obliquely irradiate the target object surface with beams, a sensor to receive a reflected light from the target object surface, an optical system to diverge the reflected light in a Fourier plane with respect to the target object surface, a camera to image a diverged beam in the Fourier plane, a gravity center shift amount calculation circuitry to calculate a gravity center shift amount of the reflected light in the light receiving surface of the sensor, based on a light quantity distribution of the beam imaged by the camera, and a measurement circuitry to measure a heightwise displacement of the target object surface by an optical lever method, using information on a corrected gravity center position obtained by correcting the gravity center position of the reflected light received by the sensor by using the gravity center shift amount. 1. A displacement measuring apparatus comprising:an illumination optical system configured to irradiate, from an oblique direction, a surface of a target object with a beam;a sensor configured to receive a reflected light from the surface of the target object irradiated with the beam;an optical system configured to diverge the reflected light in a Fourier plane with respect to the surface of the target object;a camera configured to image a diverged beam in the Fourier plane;a gravity center shift amount calculation circuitry configured to calculate a gravity center shift amount of the reflected light in a light receiving surface of the sensor, based on a light quantity distribution of the beam imaged by the camera; anda measurement circuitry configured to measure a heightwise displacement of the surface of the target object by an optical lever method, using information on a corrected gravity center position which is obtained by correcting a gravity center position of the reflected light received by the sensor by using the gravity center shift amount.2. The ...

PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes: a support provided with a wiring used for a plasma processing and configured to support a stage on which a workpiece serving as a plasma processing target is disposed; a filter that is connected to an end portion of the wiring, and attenuates noise propagated through the wiring; and an elevating unit that moves the support and the filter up and down integrally. 1. A plasma processing apparatus comprising:a support provided with a wiring used for a plasma processing and configured to support a stage on which a workpiece serving as a plasma processing target is disposed;a filter connected to an end portion of the wiring and configured to attenuate noise propagated through the wiring; anda lift configured to move the support and the filter up and down integrally.2. The plasma processing apparatus according to claim 1 , wherein the filter is fixed to the support.3. The plasma processing apparatus according to claim 1 , wherein the support has conductivity and is in a ground potential claim 1 , and includes a through hole that accommodates the wiring therein claim 1 , andthe filter is electrically connected to the support and is equipotential with the support.4. The plasma processing apparatus according to claim 3 , wherein the wiring is surrounded by an insulating member and disposed to be fixed in the through hole.5. The plasma processing apparatus according to claim 1 , wherein the stage includes a heater that generates heat by supplying power claim 1 , andthe wiring serves as a power supply wiring that supplies power to the heater.6. The plasma processing apparatus according to claim 1 , further comprising:a dielectric portion made of a dielectric material between the stage and the support,wherein a gap with an air atmosphere is formed between the support and the dielectric portion, and a seal is provided along an edge of a surface facing the dielectric material.7. The plasma processing apparatus according to claim 1 , wherein ...

Cryostation System

The present invention stores a cooled sample subjected to freezing treatment, or the like, while preventing the formation of condensation and frost-like substances and loads the sample into a sample holder for observation using a charged particle beam device. The present invention is provided with a main body for storing a sample and a lid unit mounted above the main body and is characterized in that the main body is divided into a first space and a second space by a partition member; the first space accommodates a cooling medium for cooling the sample; the second space has, disposed therein, a heating unit for heating the cooling medium accommodated in the first space; and the lid unit has, formed therein, a discharge port for discharging the gas generated by the heating of the cooling medium to the outside. 1. A cryostation system which stores a sample in a cooled state , comprising:a main body for storing the sample; anda lid unit mounted on the main body,wherein the main body is divided into a first space and a second space by a partition member,the first space accommodates a cooling medium for cooling the sample,the second space has, disposed therein, a heating unit for heating the cooling medium accommodated in the first space, andthe lid unit has, formed therein, a discharge port for discharging a gas generated by the heating of the cooling medium to the outside.2. The cryostation system according to claim 1 ,wherein the lid unit forms the discharge port by providing a step in a part of a surface mounted on the main body.3. The cryostation system according to claim 1 ,wherein the heating unit is arranged in the second space and in the vicinity on one end side of the partition member.4. The cryostation system according to claim 3 ,wherein the sample is arranged in the first space and in the vicinity on the other end side of the partition member.5. The cryostation system according to claim 3 ,wherein the lid unit forms the discharge port at a position ...

ELECTRON BEAM INSPECTION APPARATUS STAGE POSITIONING

An electron beam apparatus includes an electron optics system to generate an electron beam, an object table to hold the specimen at a target position so that a target portion of the specimen is irradiated by the electron beam, and a positioning device to displace the object table relative to the electron beam. The positioning device includes a stage actuator and a balance mass. The stage actuator exerts a force onto the object table to cause an acceleration of the object table. The force onto the object table results in a reaction force onto the balance mass. The balance mass moves in response to the reaction force. The positioning device enables the balance mass to move in a first direction in response to a component of the reaction force in the first direction. 1. An electron beam apparatus , the apparatus comprising:an electron optics system configured to generate an electron beam;an object table configured to hold a specimen at a target position so that a target portion of the specimen is irradiated by the electron beam; anda positioning device configured to displace the object table relative to the electron beam, the positioning device comprising a stage actuator and a balance mass, the stage actuator configured to exert a force onto the object table to cause an acceleration of the object table, the force onto the object table resulting in a reaction force onto the balance mass, the balance mass is configured to move in response to the reaction force;wherein the positioning device is configured to enable the balance mass to move in a first direction in response to a component of the reaction force in the first direction.2. The electron beam apparatus according to claim 1 , further comprising a vacuum vessel configured to confine a vacuum of the electron beam apparatus claim 1 , the object table and the positioning device arranged in the vacuum vessel.3. The electron beam apparatus according to claim 1 , wherein the first direction and a second direction define ...

MOUNTING TABLE, SUBSTRATE PROCESSING APPARATUS, AND CONTROL METHOD

A mounting table is provided. The mounting table includes a base having a first flow path, a recess, and a second flow path connected to the recess, and a variable control mechanism configured to variably control a contact area between a target object disposed on the base and a mounting surface for mounting thereon the target object by filling and discharging fluid into and from the recess through the second flow path. 1. A mounting table comprising:a base having a first flow path, a recess, and a second flow path connected to the recess; anda variable control mechanism configured to variably control a contact area between a target object disposed on the base and a mounting surface for mounting thereon the target object by filling and discharging fluid into and from the recess through the second flow path.2. The mounting table of claim 1 , wherein the mounting surface is divided into one or more divided portions claim 1 , and the variable control mechanism controls vertical movements of one or more divided portions of the mounting surface.3. The mounting table of claim 1 , wherein the mounting surface has one or more protrusions thereon claim 1 , and the variable control mechanism controls vertical movements of said one or more protrusions.4. The mounting table of claim 2 , wherein the mounting surface has one or more protrusions thereon claim 2 , and the variable control mechanism controls vertical movements of said one or more protrusions.5. The mounting table of claim 2 , wherein the mounting table includes a plurality of second flow paths claim 2 , each of which corresponds to the second flow path of claim 2 , andthe variable control mechanism controls a vertical movement of the mounting surface or individually controls the vertical movements of said one or more protrusions formed on the mounting surface by filling and discharging the fluid into and from the recess through the respective second flow paths connected to the recess.6. The mounting table of claim 2 ...

RF RETURN PATH FOR REDUCTION OF PARASITIC PLASMA

Embodiments disclosed herein include an RF return assembly. In an embodiment, the RF return assembly comprises a first plate with a flange, where a first hole and a second hole pass through the flange. The RF return assembly may further comprise a second plate over the first plate, and a first body positioned above the flange. In an embodiment, the RF return assembly further comprises a second body positioned below the flange, where the first body is affixed to the second body by a pillar that passes through the first hole. In an embodiment, the RF return assembly further comprises a spring attached between the second plate and the second body, where the spring passes through the second hole, and a conductive band to electrically couple the first body to the flange. 1. An RF return assembly , comprising:a first plate with a flange, wherein a first hole passes through the flange, and a second hole passes through the flange;a second plate over the first plate;a first body positioned above the flange;a second body positioned below the flange, wherein the first body is affixed to the second body by a pillar that passes through the first hole;a spring attached between the second plate and the second body, wherein the spring passes through the second hole; anda conductive band to electrically couple the first body to the flange.2. The RF return assembly of claim 1 , wherein the first plate and the second plate are displaceable relative to the first body and the second body.3. The RF return assembly of claim 2 , wherein the conductive band is flexible to maintain electrical contact between the first body and the flange as the first plate displaces relative to the first body.4. The RF return assembly of claim 3 , wherein the conductive band has an S-shaped profile.5. The RF return assembly of claim 3 , wherein the conductive band has a C-shaped profile.6. The RF return assembly of claim 1 , wherein the first body and the second body are rings.7. The RF turn assembly of ...

METHOD AND APARATUS FOR LOW PARTICLE PLASMA ETCHING

A plasma etching device including a vacuum chamber for at least one plate shaped substrate with side walls looping around a central axis. The chamber including a substrate handling opening, at least one inlet for a reductive gas and an inert gas and a pedestal formed as a substrate support in a central lower area of an etching compartment of the chamber. The pedestal mounted in the chamber in an electrically isolated manner and connected to a first pole of a first voltage source, thereby forming a first electrode. The pedestal encompassing first heating and cooling means. A second electrode is electrically connected to ground and surrounds the first electrode. A third electrode is electrically connected to ground and includes at least one upper shield and a screen-shield both being thermally and electrically connected to each other, whereby the screen-shield loops around the etching compartment. At least one of the upper shield and the screen shield includes at least one further heating and/or cooling means. A vacuum pump system and an inductive coil loop around at least an upper sidewall defining the sidewall of the etching compartment. The one first end of the coil is connected to a first pole of a second voltage-source and one second end of the coil is connected to ground. 1. A plasma etching device comprising{'b': 2', '18', '18, 'claim-text': [{'b': '28', 'a substrate handling opening ();'}, {'b': '34', 'at least one inlet () for a reductive gas and an inert gas;'}, {'b': 11', '11', '31', '2', '11', '2', '8', '11', '11', '16', '16', '35, 'a pedestal (, ′) formed as a substrate support in a central lower area of an etching compartment () of the chamber (), the pedestal () being mounted in the chamber () in an electrically isolated manner and connected to a first pole of a first voltage source (), thereby forming a first electrode (, ′), the pedestal encompassing first heating and cooling means (, ′, );'}, {'b': 12', '12', '11', '11, 'a second electrode (, ′) ...

FOCUSED ION BEAM APPARATUS

Disclosed herein is a focused ion beam apparatus moving a micro sample-piece between the focused ion beam apparatus and a sample observation apparatus by using simple configurations. The focused ion beam apparatus includes: a sample tray on which a sample is placed; a focused ion beam column irradiating the sample with a focused ion beam to obtain a micro sample-piece; a sample chamber receiving the sample tray and the focused ion beam column therein; a side-entry-type carrier being inserted into and removed from the chamber, with a front end side holding the sample-piece; and a sample-piece moving unit moving the sample-piece between the plate and the carrier, wherein the plate is movable on at least X, Y, and Z-axes respectively, and an end of the plate is provided with a carrier engagement part detachably fastened with the carrier, the carrier engagement part being moved with the carrier in company with movement of the plate.

Charged Particle Beam Device

In a side entry type sample holder, vibrations in the radial direction of the sample holder provoke a resolving power decrease in the measurement results. In the present invention, the side entry type sample holder has a stepped portion in the radial direction of an axial portion. The sample stage has a support part contacting the stepped portion in a cylindrical portion capable of moving as one body in the axis direction of the sample holder, and, through the contact between the stepped portion and the support part, a frictional force is generated, opposing the radial direction of the axial portion in the sample holder. In this manner, the vibrations in the radial direction of the sample holder are suppressed, and the resolving power decrease in the measurement results is suppressed.

Methods for Discretized Processing and Process Sequence Integration of Regions of a Substrate

The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate. 1. A processing system for discretized processing of a substrate , the system comprising:a stage for holding the substrate; 'wherein the stage or the processing cell are movable with respect to each other in three dimensions for contacting different site isolated regions on the substrate with the processing cell;', 'a processing cell,'}a sealing element positioned on a bottom of the processing cell and facing the stage for sealing the processing cell with each of the different site isolated regions; anda delivery tool for delivering processing fluids to the processing cell.2. The processing system of claim 1 , wherein the processing cell comprises a septum for sealing a top of the processing cell claim 1 , and wherein the delivery tool comprises a probe for piercing through the septum and delivering the processing fluids to the processing cell through the septum.3. The processing system of claim 2 , wherein the processing cell remains sealed while delivering processing fluids to the processing cell through the septum.4. The processing system of claim 2 , wherein the probe is movable in three dimensions with respect to the processing cell.5. The processing system of claim 2 , wherein the probe comprises a heater.6. The processing system of claim 1 , wherein the delivery tool comprises a pump for delivering processing fluids to the processing cell.7. The processing system of claim 6 , wherein the pump is a syringe pump.8. The processing system of claim 1 , wherein the delivery tool comprises a microprocessor programmed ...

Plasma etch chamber and method of plasma etching

A plasma etching chamber including within a vacuum recipient: an etching compartment with a central axis and a surrounding wall enclosing the etching compartment; a pumping compartment with a metal surrounding wall having a feed through opening; a metal partition wall traverse to the axis separating the etching compartment from the pumping compartment; a pumping slit in or along the partition wall; a workpiece support; a metal tubular arrangement through the opening, including a first part coupled to the workpiece support and a second part coupled to the metal surrounding wall, the second part being electrically conductively joint to the metal surrounding wall; an Rf feed line through the tubular arrangement connected to the workpiece support; a system ground connector at an end of the second part; distributed metal connectors establishing electric contact from the metal surrounding wall, across the pumping slit via the partition wall to the first part.

Sample Stage

Sample stage, e.g. for use in a scanning electron microscope. The sample stage includes a base, a sample carrier, and an actuator assembly arranged for moving the sample carrier in at least one direction substantially parallel to the base. The actuator assembly is arranged so as not to contribute to the mechanical stiffness of the sample stage from the sample carrier to the base. 135-. (canceled)36. A sample stage including a base , a sample carrier , and an actuator assembly arranged for moving the sample carrier in at least one direction substantially parallel to the base.37. The sample stage of claim 36 , wherein the actuator assembly does not contribute to the mechanical stiffness of the sample stage from the sample carrier to the base.38. The sample stage of claim 36 , including a two-dimensional slide bearing arranged for allowing the sample carrier to slide in two different directions in a plane parallel to the base.39. The sample stage of claim 36 , wherein the actuator assembly is connected to the sample carrier through a connection that is flexible in a direction orthogonal to the base.40. The sample stage of claim 39 , wherein the sample carrier is positioned against the base.41. The sample stage of claim 40 , wherein the sample carrier is slidingly positioned against the base.42. The sample stage of claim 41 , wherein the sample carrier includes at least one sliding surface.43. The sample stage of claim 36 , wherein the actuator assembly is further arranged for rotating the sample carrier about an axis that is orthogonal to the base claim 36 , and wherein the slide bearing is further arranged for allowing the sample carrier to rotate about the axis orthogonal to the base.44. The sample stage of claim 36 , wherein the connection of the actuator assembly to the sample carrier is substantially rigid in the direction for moving the sample carrier.45. The sample stage of claim 36 , wherein the actuator assembly is positioned beside the sample carrier.46. The ...

Methods and apparatus for high throughput sem and afm for characterization of nanostructured surfaces

A system and method is provided for of characterizing nanostructured surfaces. A nanostructure sample is placed in an SEM chamber and imaged. The system and method locates one of the nanostructures using images from the SEM imaging, excises a top portion of the nanostructure, places said top portion on a substrate such that the nanostructures are perpendicular to the substrate and a base of the top portion contacts the substrate, performs high energy ion beam assisted deposition of metal at the base to attach the top portion to the substrate, SEM imaging the top portions in the SEM chamber, determining coordinates of the top portions relative to the substrate from the SEM imaging of the top portions, placing the substrate in an AFM chamber, and performing AFM imaging of the top portions using the coordinates previously determined.

Ion Milling Apparatus and Sample Holder

An ion milling apparatus includes an ion irradiation source, a sample holder, a sample stage, a rotation mechanism, and a slide mechanism. The sample holder holds a sample such that the sample protrudes from a shielding plate in a direction perpendicular to an optical axis of an ion beam. The rotation mechanism is disposed such that a rotation center of a rotation shaft is perpendicular to the optical axis of the ion beam and parallel to a direction in which the sample protrudes from the shielding plate. The rotation mechanism supports the sample stage such that the sample stage is rotatable. The slide mechanism supports the sample held by the sample holder such that the sample is movable along the optical axis of the ion beam. 1. An ion milling apparatus comprising:an ion irradiation source that emits an ion beam;a sample holder comprising a shielding plate that blocks the ion beam, the sample holder holding a sample such that the sample protrudes from the shielding plate in a direction perpendicular to an optical axis of the ion beam;a sample stage to which the sample holder is attached;a rotation mechanism comprising a rotation shaft and disposed such that a rotation center of the rotation shaft is perpendicular to the optical axis of the ion beam and parallel to a direction in which the sample protrudes from the shielding plate, the rotation mechanism supporting the sample stage such that the sample stage is rotatable; anda slide mechanism that supports the sample held by the sample holder such that the sample is movable in a direction along the optical axis of the ion beam.2. The ion milling apparatus according to claim 1 ,wherein the slide mechanism is provided in the sample holder.3. The ion milling apparatus according to claim 2 , a holder body on which the shielding plate and a sample holding portion that holds the sample are disposed;', 'a holder supporting portion that supports the holder body; and', 'a holder-side attachment portion detachably attached ...

PEDESTAL LIFT FOR SEMICONDUCTOR PROCESSING CHAMBERS

Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame. 1. A pedestal lift assembly for a plasma processing chamber , the pedestal lift assembly comprising:a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber;an absolute linear encoder coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen;a lift rod attached to the platen; anda motor rotor encoder brake module (MRBEM) coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.2. The pedestal lift assembly of claim 1 , wherein the MRBEM further comprises:a servo motor, anda rotary encoder configured to provide positional information of the servo motor.3. The pedestal lift assembly of claim 2 , wherein the MRBEM is coupled to a top surface of the fixed frame.4. The pedestal lift assembly of claim 2 , wherein the MRBEM further comprises:a brake configured to interface with the lift rod and selectively prevent the movement thereof.5. The pedestal lift assembly of claim 1 , further comprising:a ...

SINGLE PROCESS VOLUME TO PERFORM HIGH-PRESSURE AND LOW-PRESSURE PROCESSES WITH FEATURES TO REDUCE CROSS-CONTAMINATION

Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal. 1. A processing tool comprising:a chamber body;a pedestal in the chamber body, wherein the pedestal is displaceable, and wherein the pedestal has a first surface and a second surface opposite the first surface;a first gas port for supplying gasses into the chamber body;a first exhaust positioned above the first surface of the pedestal;a second gas port for supplying gasses into the chamber body; anda second exhaust positioned below the second surface of the pedestal.2. The processing tool of claim 1 , wherein an edge of the pedestal is separated from surfaces of the chamber body.3. The processing tool of claim 1 , further comprising a cross-contamination feature that interfaces with the pedestal.4. The processing tool of claim 3 , wherein the pedestal directly contacts the cross-contamination feature.5. The processing tool of claim 3 , wherein the pedestal is separated from the cross-contamination feature by an elastomer seal.6. The processing tool of claim 1 , further comprising:an off-axis chamber portion, wherein the off-axis chamber portion comprises a sputtering target.7. The processing tool of claim 1 , wherein the first gas port supplies first processing gasses into the chamber body for a high-pressure processing operation.8. The processing ...

MICROWAVE PLASMA GENERATING DEVICE FOR PLASMA OXIDATION OF SIC

A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of λ/n, where λ is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities. 1. A microwave plasma generating device for plasma oxidation of SiC , comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity , wherein each of the resonant cavities includes a cylindrical cavity , and a micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity , diameter of each of the micro-holes is an odd multiple of wavelength of an incident wave , and an inner wall of the cylindrical cavity has a metal micro-nano structure , the micro-hole array and the metal micro-nano structure form a double-coupling structure to achieve resonance enhancement and tunability , the metal micro-nano structure has a periodic dimension of λ/n , where λ , is wavelength of the incident wave , and n is refractive index of material of the resonant cavity , the outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity , and the oxygen- ...

Dry Ashing by Secondary Excitation

An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate. 1. A method , comprising:generating a first plasma from a first gas;diffusing, in a wafer processing chamber, the first plasma through a first gas distribution plate (GDP), forming a first low energy region;diffusing the first plasma from the first low energy region through a second GDP, forming a substrate processing region; andsupplying a second gas in the substrate processing region, wherein the first plasma energizes the second gas to form radicals of the second gas, wherein the radicals of the second gas strip a layer from a substrate.2. The method of claim 1 , wherein the substrate is positioned on a pedestal claim 1 , the method further comprising moving the pedestal closer to or further from the second GDP.3. The method of claim 1 , wherein the first gas is an inert gas or nitrogen (N2).4. The method of claim 3 , wherein the second gas is gas other than the first gas claim 3 , and wherein the second gas comprises O claim 3 , N claim 3 , H claim 3 , nitrogen trifluoride (NF) claim 3 , tetrafluoromethane (CF) claim 3 , another fluorocarbon claim 3 , a hydrofluorocarbon (CHF) claim 3 , or combinations thereof.5. The method of claim 1 , wherein the second gas is energized by a Penning Ionization.6. The method of claim 1 , wherein the first GDP and second GDP comprise a conductive material and wherein the first GDP and second GDP are grounded.7. The method of claim 1 , wherein the second GDP comprises a first set of holes traversing the second GDP from top to bottom claim 1 , wherein the second GDP comprises a second set of holes claim ...

STAGE APPARATUS, AND CHARGED PARTICLE BEAM APPARATUS

Provided is a stage apparatus that reduces thermal deformation and temperature rise in an upper table on which a sample is mounted and a charged particle beam apparatus including the stage apparatus. 1. A stage apparatus comprising:an upper stage that moves an upper table on which a sample is mounted in a first direction;a middle stage that moves a middle table on which the upper stage is mounted in a second direction orthogonal to the first direction; anda lower stage that moves a lower table on which the middle stage is mounted in a third direction orthogonal to the first direction and the second direction,wherein the upper table and the middle table use a material having a smaller thermal expansion coefficient than in a material of the lower table, andthe lower table uses a material having higher thermal conductivity than in the material of the upper table and the middle table.2. The stage apparatus according to claim 1 ,wherein the upper stage includes:a mirror having a reflecting surface in the second direction; anda mirror having a reflecting surface in the third direction, and distance measurement of the reflecting surfaces of the mirrors is performed to obtain a position of a sample mounted on the upper table.3. The stage apparatus according to claim 1 ,wherein the middle stage includes:a guide part that guides the middle table in the second direction; anda connecting part that connects the middle table and the guide part with each other, andthe connecting part is configured such that rigidity against deformation of the connecting part with the guide part with a rotational axis in the second direction is lower than the rigidity against deformation of the connecting part with the rotational axis in the other directions.4. The stage apparatus according to claim 3 ,wherein a surface of the connecting part coming in contact with the guide part has a shape longer in the second direction than in the third direction.5. The stage apparatus according to claim 1 , ...

APPARATUS FOR IMPROVED HIGH PRESSURE PLASMA PROCESSING

Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket. 1. Apparatus for high pressure plasma processing , comprising:an electrostatic chuck;a ground return bracket spaced apart from the electrostatic chuck; anda dielectric plate disposed between the electrostatic chuck and the ground return bracket.2. The apparatus of claim 1 , wherein the dielectric plate separates the electrostatic chuck from the ground return bracket by at least 10 mm.3. The apparatus of claim 1 , further comprising:a housing at least partially enclosing an inner volume disposed directly beneath the electrostatic chuck.4. The apparatus of claim 3 , wherein the housing further comprises:a base; andsidewalls that extend from the base to a backside of the electrostatic chuck.5. The apparatus of claim 4 , further comprising:a hollow support shaft, wherein the base includes a central opening coupled to the hollow support shaft such that an interior of the hollow support shaft is coupled to the inner volume.6. The apparatus of claim 3 , wherein the dielectric plate is annular or otherwise includes a central opening sized to fit around the housing.7. The apparatus of claim 3 , wherein the ground return bracket is coupled to the housing.8. The apparatus of claim 1 , wherein the ground return bracket is generally bowl-shaped claim 1 , having a recessed central portion and a radially extending outer flange.9. The apparatus of claim 8 , wherein the radially extending outer flange is substantially planar and wherein the recessed central portion includes ...

에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리

기판 지지부를 위한 제 1 에지 링이 제공된다. 제 1 에지 링은 환형으로 성형된 바디 및 하나 이상의 리프트 핀 수용 엘리먼트들을 포함한다. 환형으로 성형된 바디는 기판 지지부의 상부 부분을 둘러싸도록 사이즈가 정해지고 성형된다. 환형으로 성형된 바디는 상부 표면, 하부 표면, 방사상 내측 표면, 및 방사상 외측 표면을 형성한다. 하나 이상의 리프트 핀 수용 엘리먼트들은 환형으로 성형된 바디의 하부 표면을 따라 배치되고 3 개 이상의 리프트 핀들의 각각의 상단 단부들을 수용하고, 상단 단부들과 운동학적으로 커플링을 제공하도록 사이즈가 정해지고 성형된다.

等离子体处理装置

等离子体处理装置包括：巴伦，具有第一不平衡端子、第二不平衡端子、第一平衡端子和第二平衡端子；被接地的真空容器；被电连接至第一平衡端子的第一电极；被电连接至第二平衡端子的第二电极；阻抗匹配电路；第一电源，经由阻抗匹配电路连接至巴伦，并被配置为经由阻抗匹配电路和巴伦向第一电极供给高频；低通滤波器；以及第二电源，被配置为经由低通滤波器向第一电极供给电压。

Focused ion beam apparatus

[과제] 집속 이온 빔 장치와 시료 관찰 장치 사이에서, 관찰 대상의 미소 시료편을 간이한 구성으로 용이하게 이동시키는 것을 가능하게 하는 집속 이온 빔 장치를 제공한다. [해결 수단] 시료를 올려놓는 시료대와, 상기 시료에 집속 이온 빔을 조사하여, 미소 시료편을 작성하는 집속 이온 빔 경통과, 상기 시료대, 및 상기 집속 이온 빔 경통을 수용하는 시료실과, 상기 시료실에 대해 삽탈 가능하게 형성되고, 선단측에서 상기 미소 시료편을 유지 가능한 사이드 엔트리형의 캐리어와, 상기 시료대 및 상기 캐리어 사이에서 상기 미소 시료편을 이동시키는 시료편 이동 수단을 구비하고, 상기 시료대는, 적어도 수평면을 따른 x축 및 이것에 직각인 y축과, 연직 방향을 따른 z축을 각각 따라 이동 가능하게 형성되며, 상기 시료대의 일단에는, 상기 캐리어에 착탈 가능하게 걸어맞춰져, 상기 시료대의 이동에 수반하여 상기 캐리어도 이동시키는 캐리어 걸어맞춤부를 형성했다.

Substrate processing device and substrate transfer method

기판을 처리하는 기판 처리 장치이며, 기판 보유 지지부에서 복수의 기판을 일괄 보유 지지해서 반송 가능하게 구성된 기판 반송 기구가, 진공 분위기로 되는 내부의 진공 반송 공간에 마련된 진공 반송실과, 진공 분위기로 되는 처리 공간이 내부에 복수 형성되고, 상기 진공 반송실에 접속된 처리실을 구비하고, 상기 처리실은, 상기 진공 반송 공간과 상기 처리 공간을 연통시키는 반입출구가 상기 진공 반송실측에 마련되고, 상기 처리 공간으로서, 상기 반입출구를 통해서 반입된 기판에 대하여 제1 처리가 행하여지는 제1 처리 공간과, 상기 제1 처리 후의 기판에 대하여 제2 처리가 행하여지는 제2 처리 공간을 갖고, 상기 제1 처리 공간과 상기 제2 처리 공간은, 상기 기판 반송 기구에 의한 상기 반입출구를 통한 기판의 반출입 방향으로 배열되고, 상기 기판 반송 기구의 상기 기판 보유 지지부는, 상기 제1 처리 공간과 상기 제2 처리 공간에 걸쳐질 수 있는 길이를 갖는다.

Electron Beam Inspection Device Stage Positioning

전자 빔 장치는 전자 빔을 생성하는 전자 광학 시스템, 견본을 타겟 위치에 유지하여 견본의 타겟 위치가 전자 빔에 의해 조사되게 하는 물체 테이블, 및 물체 테이블을 전자 빔에 대해 변위시키는 위치설정 디바이스를 포함한다. 위치설정 디바이스는 스테이지 액추에이터 및 밸런스 질량을 포함한다. 스테이지 액추에이터는 물체 테이블 상에 힘을 가하여 물체 테이블의 가속을 초래한다. 물체 테이블 상으로의 힘은 밸런스 질량 상으로의 반발력을 도출한다. 밸런스 질량은 반발력에 응답하여 이동한다. 위치설정 디바이스는 밸런스 질량이 반발력의 제1 방향으로의 성분에 응답하여 제1 방향으로 이동할 수 있게 한다. The electron beam apparatus includes an electro-optical system for generating an electron beam, an object table for holding a specimen at a target position such that the target position of the specimen is irradiated by the electron beam, and a positioning device for displacing the object table with respect to the electron beam do. The positioning device includes a stage actuator and a balance mass. The stage actuator applies a force on the object table to cause acceleration of the object table. A force on the object table results in a repulsive force on the balance mass. The balance mass moves in response to the repulsive force. The positioning device enables the balance mass to move in the first direction in response to a component of the repulsive force in the first direction.

Charged particle beam device and sample observation method

All of the conventional charged particle beam devices are designed only for the observation at atmospheric pressure or in gas atmosphere at a pressure substantially equal to the atmospheric pressure, and there is no device enabling easy observation using a typical high-vacuum charged particle microscope at atmospheric pressure or in gas atmosphere at a pressure substantially equal to the atmospheric pressure. Such a conventional technique has another problem that the distance between the diaphragm and a sample cannot be controlled, and so it has a high risk of breakage of the diaphragm. Then, the device of the present invention includes a diaphragm configured to separate a space to place a sample therein so that pressure of the space to place the sample therein is kept larger than pressure of the interior of the enclosure, the diaphragm letting the primary charged particle beam transmit or pass therethrough and being removable; a contact prevention member configured to prevent a contact between the sample and the diaphragm; and an adjustment mechanism configured to let at least a part of the contact prevention member in an optical axis direction of the charged particle optic column.

Electron beam drawing device and electron beam drawing method

본 발명의 과제는 마스크(M)를 이면에서 보유 지지하는 경우에, 초점 조정 기구에 의한 초점 높이의 조정 범위를 크게 하지 않고, 마스크의 높이 어긋남의 영향을 보정할 수 있도록 한 전자 빔 묘화 장치 및 전자 빔 묘화 방법을 제공하는 것이다. The subject of this invention is the electron beam drawing apparatus which made it possible to correct | amend the influence of the height shift of a mask, without increasing the adjustment range of the focus height by a focus adjustment mechanism, when holding the mask M at the back surface, and It is to provide an electron beam writing method. XY 스테이지(3) 상에 마크대(4)가 고정되어 있는 영역을 회피하여 Z 스테이지(5)를 탑재하고, Z 스테이지(5) 상에 설치된 보유 지지 기구(6) 상에 마스크(M)를 적재한다. 초점 조정 기구에 의한 조정 범위의 중간값을 마크대(4)의 높이에 일치시킨다. 마크대(4)의 높이를 측정하는 동시에, 마스크(M)의 복수의 측정점의 높이를 측정하고, 이들 측정점의 높이 중 최고값과 최저값의 중간값의 높이가 마크대(4)의 높이에 일치하도록 Z 스테이지(5)를 이동시킨다. Avoiding the area where the mark stand 4 is fixed on the XY stage 3, the Z stage 5 is mounted, and the mask M is placed on the holding mechanism 6 provided on the Z stage 5. Load it. The intermediate value of the adjustment range by the focus adjustment mechanism is made to match the height of the mark stand 4. The height of the mark stage 4 is measured, and the heights of the plurality of measurement points of the mask M are measured, and the height of the middle value between the highest value and the lowest value among the heights of these measurement points coincides with the height of the mark stage 4. The Z stage 5 is moved so as to. 마크대, 마스크, 초점 조정 기구, 전자 빔 묘화 장치, 전자 광학 경통 Mark stand, mask, focusing mechanism, electron beam writing device, electron optical tube

Magnifying Observation Apparatus

本发明提供一种放大观察设备，其可以平滑地切换电子显微镜图像和光学放大观察图像的观察域。该放大观察设备包括：封闭主体部分的端面的一对端面板；安装在主体部分的圆柱形外表面的第一位置上的电子束成像装置；安装在外表面上不同于第一位置的第二位置上的光学成像装置；旋转装置，沿外表面旋转两个成像装置以使得从两个成像装置的每一个到两个成像装置的公共旋转轴的距离保持恒定，并且两个成像装置的光轴都朝向旋转轴；布置在样本室中的样本台，其被布置到基本与旋转轴的高度相同的位置。

Method and device for ion beam processing of surfaces

本发明涉及用于表面离子束加工的方法和装置，其中该基片被定位在离子束对面，并且形成新的工艺上定义的性质图案。按照本发明，该离子束在该基片(8)表面(15)上的、当前的几何结构的作用图案根据已知的性质图案和新的工艺上被定义的性质图案以及根据处理过程通过射束特性的改变和/或通过射束的脉动被调节。该装置包括基片载体用于夹持至少一个基片(8)，该基片可在Y轴(4)和X轴(6)上运动，并且离子束源(1)被这样固定在该真空室的壁中，使得离子束源(1)的离子束的轴线可垂直于基片(8)的待加工的表面(15)地位于Z轴(11)上或者可被设置在向Z轴倾斜的轴线上。离子束源(1)到基片(8)的待加工的表面(15)的距离可被固定或可改变。

Electron beam drawing apparatus and electron beam drawing method

Charged particle beam writing apparatus and charged particle beam writing method

본 발명의 일 실시 형태의 하전 입자 빔 묘화 장치는 시료를 적재하여 소정의 방향으로 이동하는 스테이지와, 상기 시료의 묘화 영역에 하전 입자 빔을 조사하는 제1 칼럼과, 상기 소정의 방향에 대해 상기 제1 칼럼의 후방에 위치하여 상기 시료의 묘화 영역에 하전 입자 빔을 조사하는 제2 칼럼과, 상기 소정의 방향에 대해 상기 제1 칼럼이 하전 입자 빔을 조사하는 위치보다도 전방과 상기 조사하는 위치의 대략 바로 아래 중 어느 한쪽의 위치에서의 상기 시료의 높이를 측정하는 센서를 구비한 것을 특징으로 한다. The charged particle beam drawing apparatus of one embodiment of the present invention includes a stage for loading a sample and moving in a predetermined direction, a first column for irradiating the charged particle beam to the drawing region of the sample, and the A second column positioned behind the first column and irradiating the charged particle beam to the drawing region of the sample; and a position in front of the irradiated charged particle beam and the irradiated position in the predetermined direction; It is characterized in that it comprises a sensor for measuring the height of the sample at any one of the positions just below. 하전 입자 빔 묘화 장치, 스테이지, 칼럼, 시료, 센서 Charged Particle Beam Writing Apparatus, Stage, Column, Sample, Sensor

Substrate processing apparatus having electrostatic chuck and substrate processing method

基板处理装置的示例包括：腔室；设置在腔室内的上盖；静电卡盘，其包括电介质体的环形部分和嵌入该环形部分中的嵌入电极，该静电卡盘设置在腔室内；以及等离子体单元，配置为在上盖和静电卡盘下方的区域中产生等离子体，其中，环形部分包括位于上盖的紧下方的环形第一上表面和位于上盖的紧下方并围绕第一上表面的第二上表面，第二上表面具有高于第一上表面的高度的高度。

Method and apparatus for patterning micro and nano structures using a mask-less process

According to a specific embodiment of the present invention, a mask-less lithography method and apparatus is provided. The apparatus includes an integrated write head on a slider with an air bearing that creates a lift force that allows that write head to fly over a spinning wafer substrate in nanometer distance without physical contact. The short distance between the write head and substrate prevents the light from diffracting. As a result, micro and nanometer structures can be patterned without being limited by light diffraction in conventional lithography methods.

A Separate Plasma Source Coil and a Method for Controlling the Same

The present invention relates to a separable plasma source coil and a control method thereof. The separable plasma source coil comprises: a center coil group (11) disposed around the coil center (13) and composed of at least one linear center coil (11_1 to 11_K); and an edge coil group (12) disposed on the circumferential surface of the center coil group (11) and composed of at least one linear edge coil (12_1 to 12_L).

MODULAR REACTOR FOR MICROWAVE PLASMA-ASSISTED DEPOSITION

L'invention porte sur un réacteur modulaire (1) de dépôt assisté par plasma microonde pour la fabrication de diamant de synthèse, ledit réacteur étant caractérisé en ce qu'il comprend au moins trois éléments de modulation, lesdits éléments de modulation étant sélectionnés parmi : - une couronne (450) apte à être positionnée entre une première partie d'enceinte (430) et une deuxième partie d'enceinte (440) ; - un module de porte substrat (500), mobile en translation verticale et en rotation, en contact avec un quart d'onde (501) et comportant au moins un système de refroidissement fluide (520) ; - un plateau (900) mobile en translation verticale de façon à modifier la forme et le volume de la cavité résonante (41) et comportant des ouvertures traversantes (911) permettant le passage des gaz ; - un module de distribution des gaz (100), comportant une plaque de distribution des gaz amovible (110) comprenant une surface interne (111), une surface externe (112) et une pluralité de buses de distribution des gaz (113) formant des canaux entre les dites surfaces (111, 112) aptes à conduire un flux de gaz, et un dispositif de support (120) relié à un système de refroidissement et apte à accueillir la plaque de distribution amovible des gaz amovible (110) ; et - un module de contrôle du refroidissement du substrat (300), comportant un dispositif d'injection de gaz de résistance thermique amovible (330). The invention relates to a modular reactor (1) for deposition assisted by microwave plasma for the manufacture of synthetic diamond, said reactor being characterized in that it comprises at least three modulation elements, said modulation elements being selected from: - a crown (450) capable of being positioned between a first enclosure part (430) and a second enclosure part (440); - a substrate holder module (500), movable in vertical translation and in rotation, in contact with a quarter wave (501) and comprising at least one fluid cooling system (520 ...

Electron-beam size measuring apparatus and size measuring method with electron beams

[과제] 시료 표면의 전위를 일정하게 하여 정확하게 시료를 측정할 수 있는 전자 빔 치수 측정 장치 및 전자 빔 치수 측정 방법을 제공하는 것을 목적으로 한다. DISCLOSURE OF THE INVENTION An object of the present invention is to provide an electron beam dimension measuring apparatus and an electron beam dimension measuring method capable of accurately measuring a sample by keeping the potential of the sample surface constant. [해결 수단] 전자 빔 치수 측정 장치는, 전자 빔을 시료의 표면에 조사하는 전자 빔 조사 수단과, 시료로부터 방출되는 전자를 검출하는 검출 수단과, 시료와 검출 수단의 이차 전자 제어 전극 간의 거리를 측정하는 거리 측정 수단과, 시료를 올려두는 스테이지와, 거리 측정 수단으로 하여금 측정하도록 한 거리가 미리 정한 일정한 거리가 되도록 스테이지의 높이를 조정하고, 당해 거리가 된 경우에 시료의 표면의 전위가 일정하게 되도록 미리 구한 제어 전압을 검출 수단의 이차 전자 제어 전극에 인가하고, 소정의 가속 전압을 인가하여 전자 빔을 조사시키는 제어 수단을 포함한다. 상기 스테이지는, 시료를 전기적으로 접속하지 않는 보유ㆍ지지 수단과, 시료를 상하 방향으로 이동시키는 이동 수단을 포함해도 좋다. [Solution means] The electron beam dimension measuring apparatus includes an electron beam irradiation means for irradiating an electron beam to a surface of a sample, a detection means for detecting electrons emitted from the sample, and a distance between the sample and the secondary electron control electrode of the detection means. The height of the stage is adjusted so that the distance measuring means to be measured, the stage on which the sample is placed, and the distance that the distance measuring means is measured to be a predetermined constant distance, and the potential of the surface of the sample is constant when the distance is reached. And a control means for applying the control voltage obtained in advance to the secondary electronic control electrode of the detection means and irradiating the electron beam by applying a predetermined acceleration voltage. The stage may include holding and holding means for not electrically connecting the sample and moving means for moving the sample in the vertical direction. 전자 빔, 전자 빔 치수 측정, 시료, 이차 전자 방출비, 제어 전압, 제어 전 극. Electron beam, electron beam dimension measurement, sample, secondary electron emission ratio, control voltage, control electrode.

Device for producing and placing sheets

一种用于制作和放置薄片的装置包含聚焦离子束、扫描电子显微镜和用于放置至少两个样品的工作台，所述工作台实现所述样品的倾斜、旋转和移动，所述装置还包含由用于附接和传送所述样品的针终止的机械手。所述机械手定位于垂直于所述样品的倾斜的轴线的平面中，藉此实现轻松地传送所述薄片并将其放置入透射电子显微镜的样品架(称为网格)。所述机械手经调整以围绕其自身的轴线旋转所述针。因此，在从半导体装置制作薄片的情况下，本发明实现反转薄片并且在上面形成有半导体结构的半导体衬底层上将其抛光。

Vacuum processing equipment

処理の効率を向上させた真空処理装置を提供するため、ロック室内に配置され前記真空搬送ロボットとの間で前記ウエハを受け取って梁部上に支持する或いは支持した前記ウエハを渡すプッシャアームと、前記ロック室内の底部に配置され下方に移動した前記プッシャアームの梁部から渡されて複数の支持ピン先端上に乗せられた前記ウエハを冷却する冷却板とを備え、前記プッシャアームは水平方向に延在した梁部上で載せられる前記ウエハの中心の周りの４箇所に当該ウエハを先端で支持する４つのプッシャピンと、前記根元部に連結され前記梁部を上下方向に移動する駆動部とを有し、前記冷却板はその中央部に下方に移動した前記プッシャアームの梁部が収納される凹み部を有して、前記支持ピンが前記凹み部に収納された前記プッシャアームの前記プッシャピンより前記冷却板上に乗せられた前記ウエハの中心から外周側に位置した。 In order to provide a vacuum processing apparatus having improved processing efficiency, a pusher arm arranged in a lock chamber and receiving the wafer with the vacuum transfer robot and supporting or passing the supported wafer on the beam portion. The pusher arm is provided with a cooling plate for cooling the wafer, which is passed from the beam portion of the pusher arm arranged at the bottom of the lock chamber and moved downward and placed on the tips of a plurality of support pins, and the pusher arm is horizontally oriented. Four pusher pins that support the wafer at the tip at four locations around the center of the wafer placed on the extended beam portion, and a drive unit that is connected to the root portion and moves the beam portion in the vertical direction. The cooling plate has a recessed portion in the center thereof in which the beam portion of the pusher arm moved downward is housed, and the support pin is housed in the recessed portion from the pusher pin of the pusher arm. It was located on the outer peripheral side from the center of the wafer placed on the cooling plate.

Modulized sample stage

본 발명의 실시예에 따른 모듈화 샘플 스테이지는 고정 베이스에 설치된 X축 액추에이터에 의해서 X축을 따라서 왕복하여 이동 가능하게 상기 고정 베이스 상에 분리 가능하게 결합되는 X축 이동 모듈; Y축 액추에이터에 의해서 Y축을 따라서 왕복하여 이동 가능하게 상기 X축 이동 모듈 상에 분리 가능하게 결합되는 Y축 이동 모듈; 제1 회전 액추에이터에 의해서 양방향으로 회전 가능하게 상기 Y축 이동 모듈 상에 분리 가능하게 결합되는 회전 모듈; 틸트 액추에이터에 의해서 양방향으로 틸팅 가능하게 상기 회전 모듈 상에 분리 가능하게 결합되는 틸트 모듈; 및 제2 회전 액추에이터에 의해서 양방향으로 회전 가능하게 상기 틸트 모듈 상에 분리 가능하게 결합되고, 상기 제2 회전 액추에이터 및 상기 틸트 액추에이터에 의해서 회전 및 틸팅이 독립적으로 가능한 틸트 회전 모듈을 포함하되, 상기 X축 이동 모듈, 상기 Y축 이동 모듈, 상기 회전 모듈, 상기 틸트 모듈, 및 상기 틸트 회전 모듈이 독립적으로 분리되고 재조립되도록 구성될 수 있다. The modular sample stage according to an embodiment of the present invention includes: an X-axis moving module detachably coupled to the fixed base to reciprocate along the X-axis by an X-axis actuator installed on the fixed base; a Y-axis movement module separably coupled on the X-axis movement module to reciprocate along the Y-axis by a Y-axis actuator; a rotation module separably coupled to the Y-axis movement module to be rotatable in both directions by a first rotation actuator; a tilt module detachably coupled to the rotation module to be tiltable in both directions by a tilt actuator; and a tilt rotation module separably coupled to the tilt module to be rotatably rotatable in both directions by a second rotation actuator, and independently capable of rotation and tilting by the second rotation actuator and the tilt actuator, wherein the X The axis movement module, the Y-axis movement module, the rotation module, the tilt module, and the tilt rotation module may be configured to be independently separated and reassembled.

Sample observation method, sample processing method, and charged particle beam apparatus

Substrate processing method and substrate processing apparatus

본 발명은, 플라스마 처리에서의 기판 이면의 금속 오염을 적절하게 저감한다. 기판 처리 장치에 의해 기판을 처리하는 방법이며, 기판 처리 장치는, 내부에서 기판을 처리하는 처리 용기와, 상기 처리 용기의 내부에 형성되는 플라스마 생성 공간과, 상기 플라스마 생성 공간과 구획판을 통해서 연통하는 처리 공간과, 상기 처리 공간의 내부에 마련되어, 기판을 상면에 적재하는 적재대와, 상기 적재대 상에서 기판을 승강시키는 승강 기구를 갖고, 상기 처리 공간에서의 기판의 플라스마 처리 중에, 상기 승강 기구를 사용해서 기판을 승강시켜, 해당 플라스마 처리 중의 기판에 전위 변화를 생기게 한다.

Modular reactor for microwave plasma assisted deposition

Reactor modular de deposición asistida por plasma de microondas (1) para la fabricación de diamante de síntesis, comprendiendo dicho reactor: - un generador de microondas (70) configurado para generar microondas cuya frecuencia está comprendida entre 300 MHz y 3000 MHz, - una cavidad resonante (41) determinada, al menos en parte, por las paredes internas cilíndricas (420) de un recinto (400) del reactor, - un sistema de llegada de los gases (10) apto para aportar gases en el seno de la cavidad resonante (41), - un módulo de salida de los gases (60) apto para retirar dichos gases de la cavidad resonante (41), - un módulo de acoplamiento de las ondas (80) apto para transferir las microondas desde el generador de microondas (70) hasta la cavidad resonante (41), al objeto de permitir la formación de un plasma, y - un soporte de crecimiento (51) presente dentro de la cavidad resonante (41), comprendiendo dicho reactor modular al menos tres elementos de modulación, estando dichos elementos de modulación seleccionados de entre: - una corona (450) apta para ser posicionada entre una primera parte de recinto (430) y una segunda parte de recinto (440), al objeto de modificar la forma y/o el volumen de la cavidad resonante (41), y un sistema de juntas (460) que, permitiendo la estanqueidad desde el punto de vista del vacío y la continuidad eléctrica de las paredes del recinto, está dispuesto entre la corona (450) y, respectivamente, la primera parte de recinto (430) y la segunda parte (440) del recinto (400); - un módulo de portasustrato (500) y un cuarto de onda (501), estando dicho módulo de portasustrato dotado de movimiento de traslación vertical y giratorio, estando en contacto con el cuarto de onda (501) e incluyendo al menos un sistema de refrigeración fluida (520); - una bandeja (900) que, dotada de movimiento de traslación vertical, al objeto de modificar la forma y el volumen de la cavidad resonante (41), incluye aberturas pasantes (911) que permiten el paso de los ...

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a charged particle beam system comprising a charged particle beam source, a charged particle column, a sample chamber, a plurality of electrically powered devices arranged within or at either one of the charged particle column, the charged particle beam source and the sample chamber, and at least one first converter to convert an electrical AC voltage power into an electrical DC voltage. The first converter is positioned at a distance from either of the charged particle beam source, the charged particle column and the charged particle chamber, and all elements of the plurality of electrically powered devices, when operated during operation of the charged particle beam source, are configured to be exclusively powered by the DC voltage provided by the converter.

Positioning device for interference measuring table

一种用于电子束检查装置的台装置，包括：载物台(3)，其包括支撑表面，该载物台被配置为将衬底(190)支撑在该支撑表面上；定位设备(180)，其被配置为定位载物台；位置测量系统(5)，其包括位置传感器(8‑10)，该位置传感器被配置为测量载物台的平行于第一轴线的高度位置，该第一轴线基本垂直于支撑表面，该位置传感器包括具有干涉仪传感器(9、10、12)的干涉仪测量系统，其中干涉仪传感器的测量束(11、15)被配置为沿测量方向照射载物台的反射表面，该测量方向具有平行于第一轴线的第一分量和平行于第二轴线的第二分量，该第二轴线基本上垂直于第一轴线。

Deposition ring for thin substrate handling via edge clamping

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having a first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10 −5 per incident neon ion.

Charged particle beam device and sample observation method

Any of conventional charged particle beam devices are manufactured as a device dedicated to observation under atmospheric pressure or under a gas atmosphere of a pressure substantially the same as atmospheric pressure, and no device existed for simply performing observation under atmospheric pressure or under a gas atmosphere of a pressure substantially the same as atmospheric pressure by using a standard high vacuum charged particle microscope. Further, in conventional methods there is a problem in which there is a high possibility of damaging the diaphragm due to lack of a method for controlling the distance between a diaphragm and a sample. Consequently, the present invention is characterized by being provided with the following: a removable diaphragm that isolates a space in which a sample is mounted so that the pressure of the space in which the sample is mounted is maintained at a greater pressure than that inside an enclosure, and that causes a primary charged particle beam to be transmitted or passed; a contact prevention member for preventing contact between the sample and the diaphragm; and an adjustment mechanism that enables at least a portion of the contact prevention member to be moved in the light axis direction of a charged particle optical lens barrel.

Substrate processing method and substrate processing apparatus

There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

Method for electron tomography

Charged particle beam system and method of operating a charged particle beam system

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip.

Sample height regulating method, sample observing method, sample processing method and charged particle beam apparatus

Calculation means calculates a sample height for focusing an ion beam and an electron beam onto a same observation point, based on magnifications of a secondary electron image obtained by an irradiation with the ion beam and a secondary electron image obtained by an irradiation with the electron beam, and a distance between an observation point in the secondary electron image obtained by the irradiation with the ion beam and the observation point in the secondary electron image obtained by the irradiation with the electron beam.

Plasma treatment device

本發明公開了一種等離子體處理裝置，該裝置包含：真空反應腔，其由反應腔腔體和腔體端蓋包圍而成；可移動上電極元件，設置在真空反應腔內；下電極元件，與可移動上電極元件相對設置，所述下電極元件與所述反應腔腔體底部可拆卸連接；複數個自對準裝置，所述自對準裝置包含自對準上結構和自對準下結構，其分別與所述可移動上電極元件和所述下電極元件連接，所述自對準上結構和所述自對準下結構對齊拼合時所述可移動上電極元件和所述下電極元件中心對齊。其優點是：該裝置通過自對準上結構和自對準下結構協同配合，實現了可移動上電極元件和下電極元件的同心度調節，所述自對準裝置結構簡單，操作方便，減輕了工作人員的調試壓力。

Imaging system and imaging method

An imaging system having a scanning electron microscope capable of rapidly obtaining clear images of inspection targets at different heights is disclosed. The imaging system includes a computer having a memory storing design data including two-dimensional design information of each of layers of a three-dimensional multilayer structure constituting a surface of the specimen, the design data further including height information of each of the layers. The computer is configured to: read the two-dimensional design information and the height information from the memory; calculate a height of an image acquisition position on the specimen from the two-dimensional design information and the height information; and instruct the scanning electron microscope to focus the electron beam on the image acquisition position based on the calculated height of the image acquisition position.

Cryogenic storage system

关于实施冷冻处理等的冷却试样，防止结露与霜状物质的产生，搭载于用于保存、以及在带电粒子线装置中观察的试样支架。在本发明中，具备保存试样的主体部、载置于上述主体部上的盖部，上述主体部通过分隔部件分为第一空间、第二空间，在上述第一空间中收纳冷却上述试样的冷却介质，在上述第二空间中配置加热被收纳于该第一空间中的冷却介质的加热部，上述盖部形成将由该冷却介质的加热而产生的气体向外部排出的排出口。

Microwave plasma generation device for SiC plasma oxidation

一种用于SiC等离子体氧化的微波等离子体发生装置，包括外腔体和设置在所述外腔体内的多个微孔/微纳结构双耦合谐振腔，其中所述谐振腔包括一圆柱形腔体，所述圆柱形腔体的周壁上均匀分布由多个微孔形成的微孔阵列，所述微孔的直径是波长的奇数倍，所述腔体的内壁上具有金属微纳结构，所述金属微纳结构的周期尺寸为λ/n，λ为入射波长，n为谐振腔材料的折射率，所述外腔体上设置有进气口，用于向所述外腔体内输送含氧气体，所述含氧气体在所述谐振腔周围形成用于氧化SiC的氧等离子体，所述谐振腔的下方设置有载物台。本发明的微波等离子体发生装置可实现高效、均匀性良好的SiC样品的氧化。

Multi-working range-height sensor using multiple wavelengths

本发明揭示一种系统。所述系统包括载物台组合件，所述载物台组合件经配置以接纳样品且在第一特性化模式期间将所述样品的高度维持在第一工作距离高度，以及在额外特性化模式期间将其维持在额外工作距离高度。所述系统进一步包括经配置以产生照明光束的照明源。所述系统进一步包括照明臂，所述照明臂包括经配置以在所述第一特性化模式期间将包括第一波长的照明的所述照明光束的部分引导到所述样品，且在所述额外特性化模式期间将包括额外波长的照明的所述照明光束的部分引导到所述样品的一组光学元件。所述系统进一步包括经配置以接收从所述样品发出的照明的检测器组合件，及经配置以基于通过所述检测器组合件接收的所述照明确定样品高度值的控制器。

Electron beam exposure apparatus and semiconductor device manufacturing method

An electron beam exposure apparatus which exposes a substrate with a predetermined pattern using one or plurality of electron beams is provided with a Z stage on which the substrate is mounted; an X-Y transfer stage which drives the z stage on an X-Y plane; and an electromagnetic actuator (a  linear motor movable element and  linear motor stator) which drives the z stage in a rotation direction about the Z-axis with respect to the X-Y transfer stage.

Substrate positioning device and electron beam inspection tool

本發明係關於一種載物台裝置，該載物台裝置包含：- 一物件台，其經組態以固持一物件；- 一定位器件，其經組態以定位該物件台及由該物件台固持之該物件；- 一遠端溫度感測器，其經組態以量測該物件台及/或該物件之一溫度，其中該遠端溫度感測器包含一被動溫度感測元件。

Substrate processing apparatus

本发明构思提供了一种用于处理基板的设备。根据实施方式的基板处理设备包括具有处理空间的外壳，在所述处理空间中处理基板；支撑单元，所述支撑单元在所述处理空间中支撑基板；以及气体供应单元，所述气体供应单元向所述处理空间供应气体，其中在所述支撑单元内部形成传热流道、销孔和连接部分，所述传热流道向由支撑单元支撑的基板供应传热介质，所述销孔限定用于升降由支撑单元所支撑的基板的升降销的升降路径，并且所述连接部分使所述传热流道和所述销孔相互连通，并且所述连接部分包括多孔结构。

Lift pin

本發明之升降銷係一種與具有處理面及非處理面之基板接觸之升降銷，且具備：中央構件，其與上述基板之上述非處理面對向，且具有第1面、及導電性構件即本體，該第1面具有第1表面粗糙度及電性絕緣部；周圍構件，其包圍上述中央構件之周圍，與上述基板之上述非處理面對向，且具有第2面，該第2面具有小於上述第1表面粗糙度之第2表面粗糙度及電性絕緣部。

Ion Implantation Method and Device

이온 빔의 빔 전류와, 기판에 대한 도즈량, 그리고 1로 세팅된 기판의 스캔 회수의 초기값을 이용하여, 기판의 스캔 속도를 산출한다. 스캔 속도가 소정 범위 내에 있으면, 현재 스캔 회수 및 현재 스캔 속도를 각각 실용 스캔 회수 및 실용 스캔 속도로서 세팅한다. 스캔 속도가 소정 범위의 상한보다 높으면, 산출 과정을 중단한다. 스캔 속도가 소정 범위의 하한보다 낮으면, 스캔 회수를 1 증가시켜 보정 스캔 회수를 산출한다. 보정 스캔 회수 등을 이용하여, 보정 스캔 속도를 산출한다. 보정 스캔 속도가 허용 스캔 속도 범위 내에 들어갈 때까지, 전술한 단계를 반복 실시한다. The scanning speed of the substrate is calculated using the beam current of the ion beam, the dose to the substrate, and the initial value of the number of scans of the substrate set to one. If the scan speed is within a predetermined range, the current scan count and the current scan speed are set as the utility scan count and the utility scan speed, respectively. If the scan speed is higher than the upper limit of the predetermined range, the calculation process is stopped. If the scan speed is lower than the lower limit of the predetermined range, the scan count is increased by one to calculate the corrected scan count. The correction scan speed is calculated using the correction scan count and the like. The above-described steps are repeated until the corrected scan speed is within the allowable scan speed range.