ION IMPLANTATION METHOD AND APPARATUS
PROBLEM TO BE SOLVED: To improve a throughput by preventing that the number of times of scanning becomes an odd number and by eliminating a loss time when the number of times of scanning is in odd number. SOLUTION: Using a beam current of ion beams 4, a dose amount to a substrate 2, and a reference scanning speed, the number of times of scanning of the substrate 2 for achieving the dosage is calculated by an integral value obtained by omitting decimal point or less, and by determining whether the number of times of scanning is 2 or more, if it is smaller than 2, processing is stopped, and if it is 2 or more, the number of times of scanning is determined if it is an even number or an odd number, and when it is an even number, that scanning number of times is made a practical scanning number of times as it is, and when it is an odd number, the number of times of scanning of an even number smaller than it by one is obtained to make it a practical scanning number of times. By using the above practical scanning number of times, the beam current, and the dosage, a practical scanning speed of the substrate 2 is calculated, and according to these, ion implantation to the substrate 2 is carried out. COPYRIGHT: (C)2009,JPO&INPIT
