МИШЕНЬ ДЛЯ РАСПЫЛЕНИЯ, ИМЕЮЩАЯ УВЕЛИЧЕННУЮ ЭНЕРГЕТИЧЕСКУЮ СОВМЕСТИМОСТЬ

Изобретение относится к системе центрирования пластины, которая имеет пластину с держателем, в которой пластина центруется в держателе как при комнатной температуре, так и при более высоких температурах, независимо от теплового расширения пластины и держателя, и пластина может свободно расширяться в держателе при более высоких температурах. Изобретение относится в частности к мишени, имеющей рамочное крепление мишени, которое очень хорошо подходит для использования в источнике покрытия для покрытия мишени импульсным магнетронным распылением большой мощности. Технический результат - предотвращение разрушения мишени под воздействием гидростатического давления в охлаждающем трубопроводе. 2 н. и 4 з.п. ф-лы, 6 ил.

МИШЕНЬ, ПРИСПОСОБЛЕННАЯ К УСТРОЙСТВУ ОПОСРЕДСТВОВАННОГО ОХЛАЖДЕНИЯ

Изобретение относится к способу нанесения покрытия на подложку путем напыления с конденсацией из газовой фазы в условиях вакуума и источнику материала для нанесения покрытия. Источник содержит мишень, имеющую переднюю и заднюю стороны и элемент крепления мишени с каналом охлаждения. Мишень задней стороной расположена на стенке упомянутого элемента крепления и зафиксирована на упомянутом элементе крепления с помощью средств фиксации. Стенка элемента крепления, на которой расположена мишень, выполнена в виде гибкой мембраны, отделяющей канал охлаждения от задней стороны мишени. На задней стороне мишени и/или на стенке элемента крепления, на которой расположена мишень, наклеена самоклеющаяся углеродная фольга. Способ нанесения покрытия на подложку состоит в напылении с конденсацией материала из газовой фазы в условиях вакуума и включает осаждение слоя материала с использованием источника материала. 2 н. и 10 з.п. ф-лы, 5 ил., 1 табл.

СПОСОБ ГОМОГЕННОГО НАНЕСЕНИЯ ПОКРЫТИЙ HIPIMS

... 1. Способ физического нанесения покрытия из газовой фазы путем распыления в вакуумированой камере для нанесения покрытий, в частности, с помощью процесса HIPIMS, включающий следующие этапы:a) подготовка генератора с заданной постоянной отдачей мощности, предпочтительно, по меньшей мере после подключения и по окончании интервала увеличения мощности,b) подключение генератора,c) присоединение первого частичного катода к генератору так, чтобы мощность генератора подавалась на первый частичный катод,d) отсоединение генератора от первого частичного катода по окончании заданного первого интервала импульсов высокой мощности, соответствующего первому частичному катоду,e) присоединение второго частичного катода к генератору так, чтобы мощность генератора подавалась на второй частичный катод,f) отсоединение генератора от второго частичного катода по окончании заданного второго интервала импульсов высокой мощности, соответствующего второму частичному катоду,отличающийся тем, что длительность первого ...

МИШЕНЬ ДЛЯ РАСПЫЛЕНИЯ, ИМЕЮЩАЯ УВЕЛИЧЕННУЮ ЭНЕРГЕТИЧЕСКУЮ СОВМЕСТИМОСТЬ

СПОСОБЫ, ИСПОЛЬЗУЮЩИЕ УДАЛЕННУЮ ПЛАЗМУ ДУГОВОГО РАЗРЯДА

... 1. Система для нанесения покрытий, содержащая:вакуумную камеру и узел нанесения покрытий, включающий:источник паров;подложкодержатель для удерживания подложек, на которые наносятся покрытия, таким образом, чтобы эти подложки располагались перед источником паров;узел катодной камеры, включающий катодную мишень, необязательный первичный анод и экран, изолирующий катодную мишень от вакуумной камеры, при этом указанный экран имеет отверстия для пропускания тока электронной эмиссии от катодной мишени в вакуумную камеру;удаленный анод, электрически связанный с катодной мишенью;первичный источник питания, присоединяемый между катодной мишенью и первичным анодом; ивторичный источник питания, присоединяемый между катодной мишенью и удаленным анодом, причем источник паров располагается между узлом катодной камеры и удаленным анодом, линейные размеры удаленного анода, источника паров, катодной мишени и подложкодержателя параллельны друг другу, и линейные размеры удаленного анода равны или превышают ...

СИСТЕМА НАНЕСЕНИЯ ПОКРЫТИЯ (ВАРИАНТЫ)

Vapour deposition

Sputtering device

Sputter deposition

A sputter deposition apparatus comprising a plasma generation arrangement arranged to provide plasma for sputter deposition of target material 102 within a sputter deposition zone 112, a conveyor system 114, 118 for conveying a continuous web of substrate 104 through the sputter deposition zone in a conveyance direction D, and one or more target support assemblies 108 to support one or more targets in the sputter deposition zone to provide for sputter deposition of the target material on the substrate utilising the plasma such that as the substrate is conveyed through the sputter deposition zone, in use, there is deposited a first stripe of target material on the substrate and a second stripe of target material on the substrate wherein the first stripe comprises at least one of a different density of the target material or a different composition of the target material than the second stripe. Ideally, the apparatus comprises a first target support assembly supporting a first target 102a ...

Sputter deposition

Method of manufacturing crystaline material from different materials

Verfahren und eine Vorrichtung zur kontinuierlichen Erzeugung einer flüssigen Stahlschmelze aus Schrott

Das Verfahren zur kontinuierlichen Erzeugung einer flüssigen Stahlschmelze aus Schrott umfasst:-Einschmelzen von Schrott in einem Schachtofen (1), -Austragen der erzeugten Stahlschmelze und der anfallenden Schlacke über eine im unteren Teil des Schachtofens (1) angeordnete Austragsöffnung (11), -Einbringen der ausgetragenen Stahlschmelze und der Schlacke in einen Durchlaufofen (13),-Überhitzen und Raffinieren der Schmelze im Durchlaufofen (13),-voneinander gesondertes kontinuierliches Austragen der Stahlschmelze und der Schlacke aus dem Durchlaufofen (13),-Abziehen von Ofengas aus dem Durchlaufofen (13), -Verwenden des Ofengases, ggf. nach einer zumindest teilweisen Entstaubung und/oder Reinigung, als Brenngas für einen Brenner (7) des Schachtofens (1).

MAGNETIC LOCK FOR A STEAM SEPARATION DEVICE

Lichtbogenverdampfungs-Beschichtungsquelle

The invention relates to an arc evaporation coating source (1), comprising: a target (2) made of a coating material to be evaporated, a ferromagnetic yoke (3) for influencing the evaporation of the coating material to be evaporated and at least one permanently magnetic body (4) for influencing the evaporation of the coating material to be evaporated. The ferromagnetic yoke (3) is arranged in contact with the target (2). The permanently magnetic body (4) is fastened to the target (2) by means of the ferromagnetic yoke (3).

INVERTED CYLINDRICAL MAGNETRON (ICM) SYSTEM AND METHODS OF USE

An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field. WO 2014/025995 PCT/US2013/054130 17015 III k N, , WN.. :::2111 Al, ...

Papermaking fabrics with contaminant resistant nanoparticle coating and method of in situ application

SPUTTERING APPARATUS INCLUDING NOVEL TARGET MOUNTING AND/OR CONTROL

A sputtering chamber to coat a substrate (15) includes at least two sputt ering targets (102,103), one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at l east two targets may be mounted to a first wall of a plurality of walls encl osing the sputtering chamber.

SPUTTERING TARGET HAVING INCREASED POWER COMPATIBILITY

The invention relates to a plate centering system, comprising a plate having a holder, wherein the plate is centered in the holder both at room temperatures and at higher temperatures, independently of the heat expansion of the plate and the holder, and wherein the plate can freely expand in the holder at higher temperatures. The invention relates in particular to a target having a target comprising a frame-shaped target mount, which is very well suited in a coating source for high power impulse magnetron sputtering of the target.

INVERTED CYLINDRICAL MAGNETRON (ICM) SYSTEM AND METHODS OF USE

An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

СПОСОБ ОСАЖДЕНИЯ СЛАБОПРОВОДЯЩИХ СЛОЕВ (ВАРИАНТЫ)

Предложен способ получения слабопроводящих, в частности электроизолирующих, слоев по меньшей мере на одной детали при помощи вакуумного нанесения покрытий, при котором между по меньшей мере одним анодом и катодом дугового источника в атмосфере, содержащей реактивный газ, создают электрический дуговой разряд и на поверхности электрически соединенной с катодом мишени создают лишь небольшое, в основном, перпендикулярно поверхности мишени внешнее магнитное поле для поддержки процесса испарения, причем мера повторного покрывания поверхности мишени при помощи других источников покрытия составляет менее 10 %, или магнитное поле создают магнитной системой, которая содержит по меньшей мере одну аксиально поляризированную катушку с похожей с периферией мишени геометрией.

기판 프로세스 챔버를 위한 핀형 셔터 디스크

... 프로세스 챔버들에서 사용하기 위한 셔터 디스크들이 본원에서 제공된다. 몇몇 실시예들에서, 프로세스 챔버에서 사용하기 위한 셔터 디스크는, 외측 둘레를 갖는 본체, 본체의 정상부 표면 ― 정상부 표면은, 실질적으로 수평인 평면 표면을 갖는 중앙 부분, 및 중앙 부분의 방사상 외측으로 배치된 적어도 하나의 경사진 구조를 포함하고, 적어도 하나의 경사진 구조의 각각은 정상부 부분 및 정상부 부분으로부터 방사상 외측 방향으로 외측 둘레를 향하여 하방 각도로 배치된 경사진 표면을 가짐 ―, 및 본체의 바닥부 표면을 포함할 수 있다.

이동 가능한 스퍼터 조립체 및 전력 파라미터들에 대한 제어를 이용하여 기판을 코팅하기 위한 장치 및 방법

... 실시예들에 따르면, 진공 프로세스 챔버에서 기판을 코팅하기 위한 장치 및 방법이 제공된다. 방법은, 제 1 전력이 스퍼터 소스에 인가되는 동안 스퍼터 소스로부터 스퍼터 재료를 스퍼터링하는 단계를 포함하고, 스퍼터 소스는 기판에 대해 제 1 포지션에 로케이팅된다. 방법은, 스퍼터링 동안 진공 챔버에 대해 병진 운동(translational movement)으로 스퍼터 소스를 이동시키는 단계를 포함한다. 방법은, 제 2 전력이 스퍼터 소스에 인가되는 동안 스퍼터 소스로부터 스퍼터 재료를 스퍼터링하는 단계를 더 포함하고, 스퍼터 소스는 기판에 대해 제 2 포지션에 로케이팅된다.

Sputtering apparatus for forming a thin film

Disclosed is a thin film-forming sputtering device capable of performing the sputtering process at a high speed. The thin film-forming sputtering device (10) is equipped with: a vacuum chamber (11); a target holder (13) provided within the vacuum chamber (11); a substrate holder (14) provided facing the target holder (13); a power source (15) that applies a voltage between the target holder (13) and the substrate holder (14); a magnet (12) for magnetron sputtering that is provided on the back side of the target holder (13) and that generates a magnetic field having a component that is parallel to a target (T), and a high-frequency antenna (16) that generates a high-frequency inductively-coupled plasma in a region in the vicinity of target (T), wherein a magnetic field that is generated by the magnet (12) for magnetron sputtering and is at or above a prescribed strength exists. By means of the high-frequency inductively-coupled plasma generated by the high-frequency antenna (16), the supply ...

Deposition apparatus and method of manufacturing organic light emitting display apparatus using the same

A deposition apparatus includes a chamber, a substrate placing unit which is located in the chamber and on which a substrate is placed, and a sputter unit for forming a thin film on the substrate. The sputter unit includes a first target unit and a second target unit facing the first target unit. A pair of targets are mounted on each of the first target unit and the second target unit. Argon gas is directly injected between the pair of targets. Accordingly, plasma may be more effectively and stably formed. A method of manufacturing an organic light-emitting display apparatus using the deposition apparatus is also disclosed.

Physcial vapor deposition apparatus

Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.

SPUTTERING DEVICE

Disclosed is a sputtering device provided with a substrate stage (14), which rotates a substrate (S) having a surface on which a film is to be formed, in a vacuum vessel (11). A target (TA) that has a sputtering surface (TAs) formed from magnesium oxide is provided in a circumferential direction from the substrate (S). When the angle formed by the normal line (Ls) to the substrate and the normal line (Lt) to the target is described as the angle of inclination θ for the target (TA), the target (TA) is disposed such that the angle of inclination θ satisfies 50 + φ < θ < -35 + φ. Here, φ is an angle represented by φ = arctan(W/H); H represents the height from the center of the substrate (S) to the center of the target (TA); and W represents the width from the center of the substrate (S) to the center of the target (TA).

Centering of a plate in a holder both at room temperatures and at higher temperatures

A system that has a plate with a holder, in which the plate is centered in the holder both at room temperatures and at higher temperatures, independently of the thermal expansion of the plate and the holder, and in which the plate can freely expand in the holder at higher temperatures.

Inverted cylindrical magnetron (ICM) system and methods of use

An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

SPUTTERING APPARATUS AND SPUTTERING METHOD

An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

Apparatus for forming gas blocking layer and method thereof

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

PLASMA CVD APPARATUS, PLASMA CVD METHOD, REACTIVE SPUTTERING APPARATUS, AND REACTIVE SPUTTERING METHOD

A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.

MAGNETICALLY ENHANCED HIGH DENSITY PLASMA-CHEMICAL VAPOR DEPOSITION PLASMA SOURCE FOR DEPOSITING DIAMOND AND DIAMOND-LIKE FILMS

A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD ...

SPUTTERING APPARATUS

The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

Electrochromic devices

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives.

High efficiency rotatable sputter target

A rotatable sputtering target is provided for use in a sputtering system having a plurality of hollow sleeves of sputtering material arranged on a hollow e backing tube so as to form an annular space that is occupied by a bonding agent and a thermally conductive element which is a woven metal mesh.

ターゲット及びターゲットの製造方法

Sputtering device

The present invention provides a high efficiency magnetron sputtering device in which an earth shield obtained from a magnetic body is disposed on the periphery of the target, wherein unintended discharge between the cathode and the earth shield can be reduced. The sputtering device of an embodiment of the present invention is provided with: a backing plate (7), which is connected to a power source and has a target-mounting surface; a magnet (8) disposed on the back surface of the backing plate; a grounded shield (14) surrounding the perimeter of the target-mounting surface and comprising a magnetic material; and fixing sections (13), which are magnetic members located between the backing plate and the shield on the periphery of the target-mounting surface. Lines of magnetic force that pass through the spaces between the shield and the fixing sections are thereby reduced.

Method and apparatus for sputter deposition

An sputter deposition apparatus 600 comprises a substrate guide 110a, 110b, 118 for guiding a substrate 116 along a curved path, a target portion 606 for supporting target material 608, a deposition zone 614 defined between the target portion and substrate guide, biasing means 122 for applying electrical bias to the target material and a confining arrangement comprising one or more magnetic elements 104a, 104b for providing a magnetic field to confine plasma 112 in the deposition zone, wherein the confining magnetic field comprises magnetic field lines (figure 2) that follow the curved path to confine said plasma around the curved path. The plasma is preferably confined in the form of a curved sheet. A method of sputter deposition using the apparatus of the invention may comprise providing a target material comprising at least one of lithium, cobalt, lithium oxide, cobalt oxide or lithium cobalt oxide, wherein the method may be used to form a cathode layer of an energy storage device, such ...

A method of manufacturing solid state battery cathodes for use in batteries

Sputter deposition

A sputter deposition apparatus comprising a remote plasma generation arrangement to provide a plasma for sputter deposition of target material within a sputter deposition zone, a confining arrangement to provide a confining magnetic field to confine plasma in the sputter deposition zone, a substrate 304 provided within the sputter deposition zone and target support assemblies arranged to support targets 302 in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate wherein the confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited a first target 302a as a first region 330 on the substrate, a second target 302b as a second region 334 on the substrate and an intermediate region 332 between the first and second regions comprising a blend of target materials. The positioning of the targets relative to the substrate creates the composition of the various regions. The system further ...

Papermaking fabrics with contaminant resistant nanoparticle coating and method of in situ application

REMOTE ARC DISCHARGE PLASMA ASSISTED PROCESSES

A coating system includes a vacuum chamber and a coating assembly. The coating assembly has a coating assembly which includes a vapor source, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a primary cathodic vacuum-arc assembly, a remote anode electrically coupled to the cathode target, a primary power supply connected between the cathode target and the primary anode, and a secondary power supply connected between the cathode target and the remote anode. The primary cathodic vacuum-arc assembly includes a cathode chamber assembly, a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines openings for transmitting either electron emission current or metal vapor plasma from the cathode target into the vacuum chamber. The vapor source is positioned between the cathode chamber assembly and the remote anode.

REMOTE ARC DISCHARGE PLASMA ASSISTED PROCESSES

A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode. The coating system also includes a primary power supply connected between the cathode and the primary anode and a secondary power supply connected between the cathode chamber assembly and the remote anode. A method using the coating system is also provided ...

Coating system

Cathode

With the indirect cooling device matching target

Finned shutter disk for a substrate process chamber

DEVICE AND IONIC PROCESS OF PULVERIZATION

제조방법

... 본 발명은 자화고정층을 포함하는 제 1 막, 자화자유층을 포함하는 제 2 막, 및 적어도 한 층의 산화막, 질화막 및 반도체막을 포함하는 제 3 막을 포함하는 자기저항소자로서 다층박막을 성장시키는 제조방법으로서, 하나의 스퍼터링 음극을 포함한 제 1 스퍼터링 증착챔버에 제 3 막을 형성하는 단계와, 2 이상의 스퍼터링 음극들을 포함하는 제 2 스퍼터링 증착챔버에 적어도 자화고정층을 증착시키는 단계 및 2 이상의 스퍼터링 음극을 포함한 제 3 스퍼터링 증착챔버에 자화자유층을 포함하는 복수의 박막을 형성하는 단계를 포함한다.

FILM-FORMING DEVICE

... 타깃간에서의 오염이 발생하는 것을 저감할 수 있는 성막 장치를 제공한다. 성막 장치는 타깃이 설치되는 설치면을 구비하는 복수의 타깃 전극과, 상기 복수의 타깃 전극에 대향하는 위치에서 기판을 유지하는 기판 홀더와, 상기 복수의 타깃 전극과 상기 기판 홀더 사이에 회전 가능하게 설치되고, 상기 설치면에 대향 가능한 복수의 개구를 갖는 제1 셔터 부재와, 상기 제1 셔터 부재에 인접해서 배치되고, 상기 타깃 전극수와 동등한 수의 개구를 갖는 실드 부재를 구비하고, 상기 제1 셔터 부재와 상기 실드 부재의 간극은 인접하는 상기 타깃 전극의 최근접부로부터 외주측을 향해서 벌어져 있는 것을 특징으로 한다.

ROTATABLE SPUTTER TARGET

스퍼터링 샤워헤드

... 일 구현에서, 스퍼터링 샤워헤드 어셈블리가 제공된다. 스퍼터링 샤워헤드 어셈블리는, 타겟 재료를 포함하는 스퍼터링 표면 및 스퍼터링 표면 반대편의 제2 표면을 포함하는 면판을 포함하며, 복수의 가스 통로들이 스퍼터링 표면으로부터 제2 표면으로 연장된다. 스퍼터링 샤워헤드 어셈블리는, 면판의 제2 표면 근처에 포지셔닝된 백킹 플레이트(backing plate)를 더 포함한다. 백킹 플레이트는 제1 표면 및 제1 표면 반대편의 제2 표면을 포함한다. 스퍼터링 샤워헤드 어셈블리는, 백킹 플레이트의 제1 표면과 면판의 제2 표면에 의해 정의되는 플레넘(plenum)을 갖는다. 스퍼터링 샤워헤드 어셈블리는 백킹 플레이트의 제2 표면을 따라 포지셔닝된 하나 이상의 마그네트론들을 더 포함한다.

Processing apparatus for multilayer deposition

SPUTTERING APPARATUS AND METHOD

A sputtering apparatus includes: a first cylindrical target unit, a second cylindrical target unit facing the first cylindrical target unit; a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit; a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; and a power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes.

Continuous ARC deposition apparatus and method with multiple available targets

An arc deposition apparatus comprises an evacuatable chamber and means for positioning at least two targets in the chamber, wherein a first one of the at least two targets is positionable in an operative position and another of the at least two targets is positionable in a standby position. An electrical power supply is provided for supplying electrical power to the target held in the operative position to form an arc on an emission surface of the operative target. Means are provided for preparing an emission surface of the target positioned in the standby position to have a predetermined morphology. Alternatively, or in conjunction with the surface preparing means, means are provided for inspecting whether the emission surface of the target positioned in the standby position has a predetermined morphology. Preferably, the positioning means is configured to interchange the at least two targets at a predetermined time.

SPUTTERING APPARATUS AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

The present invention provides a sputtering apparatus that can efficiently laminate thin films in a short time without lowering throughputs, and a manufacturing method of an electronic device. The sputtering apparatus according to an embodiment of the present invention includes a rotatable substrate holder, four target holders obliquely arranged with respect to the substrate holder, and a first shutter and a second shutter that each are provided between the target holders and the substrate holder and have two holes arranged two-fold symmetrical with respect to a rotational axis X. Two of the four target holders are first group target holders arranged two-fold symmetrical with respect to the rotational axis X, and the other two target holders are second group target holders arranged between the first group target holders and two-fold symmetrical with respect to the rotational axis X.

STAGE DEVICE AND PROCESSING APPARATUS

A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.

Sputtering apparatus including novel target mounting and/or control

A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber.

Apparatus for PVD dielectric deposition

Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

METHOD AND DEVICE FOR HOMOGENEOUSLY COATING 3D SUBSTRATES

A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0° at all times. 12.-. (canceled)3. A device for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source , such as a planar source or a tube or double-tube source , wherein the 3D substrates , with a curved substrate surface to be coated directed toward the sputtering source , are individually able to be moved past said source in a translational manner , wherein the sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a 3D substrate , which is moved past in front of said sputtering source in a translational manner , and with respect to the current surface normal of the surface to be coated of the substrate proceeding from a fixed point such that the deviation of the current surface normal from the surface normal of the sputtering source is 0° at all times.4. The adaptable sputtering source as claimed in claim 3 , wherein the sputtering source is fitted on an end block and is connected by the free end to a counter-bearing which claim 3 , via a counter-bearing ...

SPUTTERING TARGET, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

The purpose of the present invention is to provide a sputtering target with which a film having excellent characteristics can be obtained. A sputtering target (100) is constituted of a plurality of target members (10), a backing plate (20), a bonding agent (30), and protective members (50). The plurality of target members (10) and the backing plate (20) are bonded to each other with the bonding agent (30) therebetween. On a backing plate (20) surface that corresponds in position to gaps (15) between adjacent target members (10), grooves (40) are formed. Each of the grooves (40) is provided with the protective members (50), which are composed of the same material as that of the target members (10). The width (W2) of the protective members (50) is greater than the width (W1) of the gaps (15), and is less than the width (W3) of the grooves (40). The thickness (T4) of the protective members (50) is larger than the depth (D1) of the grooves (40).

APPARATUS AND METHOD FOR LOADING A SUBSTRATE INTO A VACUUM PROCESSING MODULE, APPARATUS AND METHOD FOR TREATMENT OF A SUBSTRATE FOR A VACUUM DEPOSITION PROCESS IN A VACUUM PROCESSING MODULE, AND SYSTEM FOR VACUUM PROCESSING OF A SUBSTRATE

The present disclosure provides an apparatus for loading a substrate into a vacuum processing module. The apparatus includes a Bernoulli-type holder having a surface configured to face the substrate, and a gas supply configured to direct a stream of gas between the surface and the substrate, wherein the Bernoulli-type holder is configured to provide a pressure between the substrate and the surface configured for levitation of the substrate. The substrate is a large area substrate.

Low pressure arc plasma immersion coating vapor deposition and ion treatment

A vacuum coating and plasma treatment system includes a magnetron cathode with a long edge and a short edge. The magnetic pole of the magnetron results in an electromagnetic barrier. At least one remote arc discharge is generated separate from the magnetron cathode and in close proximity to the cathode so that it is confined within a volume adjacent to the magnetron target. The remote arc discharge extends parallel to the long edge of the magnetron target and is defined by the surface of the target on one side and the electromagnetic barrier on all other sides. There is a remote arc discharge cathode hood and anode hood extending over the arc discharge and across the short edge of the magnetron cathode. Outside of the plasma assembly is a magnetic system creating magnetic field lines which extend into and confine the plasma in front of the substrate.

APPARATUS AND PROCESS WITH A DC-PULSED CATHODE ARRAY

СИСТЕМА ФИЗИЧЕСКОГО ОСАЖДЕНИЯ ИЗ ГАЗОВОЙ ФАЗЫ С ПОМОЩЬЮ ПЛАЗМЕННО-СТИМУЛИРОВАННОГО ПРОЦЕССА С ДИСТАНЦИОННЫМ ДУГОВЫМ РАЗРЯДОМ

ТКАНЬ, ИСПОЛЬЗУЕМАЯ В БУМАГОДЕЛАТЕЛЬНОМ ПРОЦЕССЕ, С УСТОЙЧИВЫМ К ЗАГРЯЗНЕНИЮ ПОКРЫТИЕМ ИЗ НАНОЧАСТИЦ И СПОСОБ ЕГО НАНЕСЕНИЯ НА МЕСТЕ

Промышленную ткань покрывают наночастицами. Для этого осуществляют очистку поверхности промышленной ткани на месте на бумагоделательном станке, нанесение покрытия, стабилизацию ткани и отверждение покрытия для связывания материалов из наночастиц. Обеспечивается устойчивость промышленной ткани к загрязнениям. 4 н. и 15 з.п. ф-лы, 5 ил.

Magnetron-Endblock und Vakuumdrehdurchführung

Vakuumdrehdurchführung, umfassend einen an einem rotierenden Teil (1) befestigten, mit dem rotierenden Teil (1) synchron umlaufenden Rotorring (7) und einen ebenfalls mit dem rotierenden Teil (1) synchron umlaufenden Gleitdichtring (3), der durch eine erste Nebendichtung (5) gegenüber dem Rotorring (7) abgedichtet ist, so dass der Rotorring (7), die erste Nebendichtung (5) und der Gleitdichtring (3) mit dem rotierenden Teil (1) umlaufen, und einen in einem stationären Teil (2) stationär angeordneten, d.h. stillstehenden Statorring (8) und einen Gegendichtring (4), der durch eine zweite Nebendichtung (6) gegenüber dem Statorring (8) abgedichtet ist, so dass der Statorring (8), die zweite Nebendichtung (6) und der Gegendichtring (4) stillstehen, dadurch gekennzeichnet, dass der Gleitdichtring (3) und der Gegendichtring (4) aus technischer Keramik gefertigt sind.

Verfahren und eine Vorrichtung zur kontinuierlichen Erzeugung einer flüssigen Stahlschmelze aus Schrott

Das Verfahren zur kontinuierlichen Erzeugung einer flüssigen Stahlschmelze aus Schrott umfasst:- Einschmelzen von Schrott in einem Schachtofen (1),- Austragen der erzeugten Stahlschmelze und der anfallenden Schlacke über eine im unteren Teil des Schachtofens (1) angeordnete Austragsöffnung (11),- Einbringen der ausgetragenen Stahlschmelze und derSchlacke in einen Durchlaufofen (13),- Überhitzen und Raffinieren der Schmelze imDurchlaufofen (13) ,- voneinander gesondertes kontinuierliches Austragen derStahlschmelze und der Schlacke aus dem Durchlaufofen- Abziehen von Ofengas aus dem Durchlaufofen (13) ,- Verwenden des Ofengases, ggf. nach einer zumindestteilweisen Entstaubung und/oder Reinigung, als Brenngas für einen Brenner (7) des Schachtofens (1).

PVD SYSTEM WITH REMOTE ARC DISCHARGE PLASMA ASSISTED PROCESS

An arc coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall, the top wall, and the bottom wall define a coating cavity and a chamber center. A plasma source is positioned at the chamber center wherein the plasma source comprises a central cathode rod and a plurality of cathode rods surrounding the central cathode rod. The coating system also includes a sample holder that holds a plurality of substrates to be coated. Characteristically, the sample holder rotatable about the chamber center at a first distance from the chamber center.

SPUTTERING DEVICE

This sputtering device (1) is provided with: a vacuum chamber (2); a plurality of targets (8) (8a-8d); a shield (9) for selectively exposing only the target (8c) for film formation within the vacuum chamber (2); a substrate holding unit (11) that holds a substrate (10) at which minute particles flying out from the target (8c) form a film; a first moving unit (14) that moves and holds immobile the substrate holding unit (11); a mask (16) disposed between the target (8c) and the substrate (10); a second moving unit (19) that moves the mask (16)); and a plurality of through-hole units (17a-17f) comprising through-holes (17) that penetrate the mask (16) in a patterned manner.

HOMOGENEOUS HIPIMS COATING METHOD

The invention relates to a HIPIMS method by means of which homogeneous layers can be deposited over the height of a coating chamber. Two partial cathodes are used for said purpose. According to the invention, the length of the individual power pulse intervals applied to the partial cathodes is chosen individually and thus a required coating thickness profile over the height of the coating chamber is achieved.

TARGET FOR THE REACTIVE SPUTTER DEPOSITION OF ELECTRICALLY INSULATING LAYERS

A target has a target surface designed to prevent production of spark discharge to an anode in a coating chamber. A first region of the target surface is made of a first material (M1) which is composed of one or more elements that, in a reaction with a reactive gas, result in an M I -containing composite material corresponding to a composition of a desired layer material for coating substrates that are to be coated. A second region of the target surface is made of a second, different, material (M2), which is composed of one or more elements that are inert against the reactive gas or that, in a reaction with the reactive gas, result in an M2-containing composite material with a higher electrical conductivity than the M1 -containing composite material. In a mixing region of a beveled target surface region the first and second materials are situated next to each other.

REMOTE ARC DISCHARGE PLASMA ASSISTED PROCESSES

A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode. The coating system also includes a primary power supply connected between the cathode and the primary anode and a secondary power supply connected between the cathode chamber assembly and the remote anode. A method using the coating system is also provided ...

Adjustable magnet, deposition chamber and method for modifying magnetic field distribution in deposition chamber

스퍼터링 장치

... 결정성이 더욱 향상된 절연물 막을, 그 막 두께 분포를 균일하게 성막 할 수 있는 스퍼터링 장치를 제공한다. 절연물 타겟(4)이 설치되는 진공 챔버(1) 내에 이 절연물 타겟에 대향하도록 처리해야 할 기판(W)을 유지하는 스테이지(2)를 구비하며, 스테이지를 회전 구동하는 구동 수단(3)과, 절연물 타겟에 고주파 전력을 투입하는 스퍼터 전원(E1)과, 진공 챔버 내에 희가스를 도입하는 가스 도입 수단(13, 14)을 마련한 본 발명에 따른 스퍼터링 장치(SM)는, 기판과 절연물 타겟의 스퍼터면 사이의 간격(d3)을 40mm ~ 150mm의 범위로 설정하였다.

Plasma Apparatus

CONTINUOUS ARC DEPOSITION APPARATUS AND METHOD WITH MULTIPLE AVAILABLE TARGETS

Sputtering source

A sputtering source comprises two facing plate shaped targets (5,7) and a magnet arrangement(185,187) along each of the targets. An open coating outlet area (12) from the reaction space between the targets is limited by facing rims (9,10) of the two plate shaped targets. Catcher plates (207,205) along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area (12), thereby restricting the open coating outlet area (12) as limited by the mutually facing rims (9,10) of the two plate shaped targets.

SPUTTERING THIN FILM FORMING APPARATUS

Provided is a sputtering thin film forming apparatus, which has high film-forming speed, and can form a thin film having high qualities. A sputtering apparatus (10) is provided with: a target holder (14) that is provided in a vacuum container (11); a substrate holder (15) that is provided to face the target holder (14); a means (19) that introduces a plasma generating gas into the vacuum container (11); a means (161) that generates an electrical field for sputtering, said electrical field being in a region that includes a surface of a target (T); a high-frequency antenna disposing chamber (182), which is provided between an inner surface and outer surface of a wall of the vacuum container (11), and is partitioned from the inside of the vacuum container by means of a dielectric material window (183); and a high-frequency antenna (13), which is disposed inside of the high-frequency antenna disposing chamber (182), and generates a high-frequency induction field in the region that includes ...

PROCESS INTEGRATION METHOD TO TUNE RESISTIVITY OF NICKEL SILICIDE

Methods for depositing a low resistivity nickel silicide layer used in forming an interconnect and electronic devices formed using the methods are described herein. In one embodiment, a method for depositing a layer includes positioning a substrate on a substrate support in a processing chamber, the processing chamber having a nickel target and a silicon target disposed therein, the substrate facing portions of the nickel target and the silicon target each having an angle of between about 10 degrees and about 50 degrees from the target facing surface of the substrate, flowing a gas into the processing chamber, applying an RF power to the nickel target and concurrently applying a DC power to the silicon target, concurrently sputtering silicon and nickel from the silicon and nickel targets, respectively, and depositing a NixSi1-x layer on the substrate, where x is between about 0.01 and about 0.99.

Apparatus For Depositing Material On The Surface Of A Substrate

An apparatus with a deposition source and a substrate holder having a source mounting portion, which is rotatable about a first axis, a shielding element, which is disposed between the deposition source and the substrate holder, and a drive arrangement. The deposition source has a material outlet opening from which material is emitted. A longitudinal axis of an elongate central region of the material outlet opening extends parallel and centrally between the edges of the material outlet opening. The deposition source is mounted to the source mounting portion such that the longitudinal axis of the central region is parallel to the first axis. The shielding element has an aperture. The drive arrangement controls rotation of the source mounting portion, adjustment of a width of the aperture, and relative movement between the substrate holder and both the source mounting portion and the shielding element.

Sputtering apparatus and sputtering method

An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

Sputtering apparatus

Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a ...

TARGET STRUCTURE OF PHYSICAL VAPOR DEPOSITION

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

Single oxide metal deposition chamber

Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets.

SPUTTER TARGET AND SPUTTERING METHODS

The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.

MAGNETICALLY ENHANCED LOW TEMPERATURE-HIGH DENSITY PLASMA-CHEMICAL VAPOR DEPOSITION PLASMA SOURCE FOR DEPOSITING DIAMOND AND DIAMOND LIKE FILMS

A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

Sputtering apparatus including cathode with rotatable targets, and related methods

Certain example embodiments relate to sputtering apparatuses that include a plurality of targets such that a first one or ones of target(s) may be used for sputtering in a first mode, while a second one or ones of target(s) may be used for sputtering in a second mode. Modes may be switched in certain example embodiments by rotating the position of the targets, e.g., such that one or more target(s) to be used protrude into the main chamber of the apparatus, while one or more target(s) to be unused are recessed into a body portion of a cathode of (e.g., integrally formed with) the sputtering apparatus. The targets may be cylindrical magnetic targets or planar targets. At least one target location also may be made to accommodate an ion beam source.

Separated target apparatus for sputtering and sputtering method using the same

A separated target apparatus and a sputtering method using the separated target apparatus. The separated target apparatus includes a plurality of separated targets that are adhered to a base plate and that form a regular array, wherein gaps between the plurality of separated targets are disposed within an angle between a first direction that is a direction of the regular array, and a second direction perpendicular to the first direction. When sputtering is performed by using the separated target apparatus having the aforementioned structure, it is possible to obtain an uniform deposition quality on a substrate by using the separated targets that are easily manufactured and handled, and thus it is possible to make brightness of a display apparatus be uniform on an entire screen.

Verfahren zur Beschichtung eines Substrats und Beschichtungsanlage

Die Erfindung betrifft ein Verfahren zur Beschichtung eines beliebigen Substrates (1) mittels Zerstäubens, die sog. Sputterbeschichtung, sowie eine Beschichtungsanlage zur Durchführung des Verfahrens. Erfindungsgemäß wird ein bandförmiges Target (2) verwendet, das während des Beschichtungsvorganges kontinuierlich durch die Zerstäubungszone (3) geführt wird. Das Verfahren eignet sich besonders für die Beschichtung mit schlecht wärmeleitfähigen Materialien, wie z. B. Polytetrafluorethylen (PTFE).

Bandsubstratbeschichtungsanlage mit einer Magnetronanordnung

Die Erfindung betrifft eine Bandsubstratbeschichtungsanlage mit einer von Kammerwänden gebildeten Vakuumkammer sowie einer in der Vakuumkammer angeordneten Vorrichtung zur Oberflächenbehandlung eines Bandsubstrats, umfassend eine Prozesstemperierungswalze mit einer zylindrischen Mantelfläche, wobei mindestens ein Teilumfang der Mantelfläche von einem Prozessraum umschlossen ist, der eine Anordnung von durch Trennwandelemente begrenzten Kompartments aufweist, wobei in mindestens einem Kompartment mindestens eine Beschichtungseinrichtung angeordnet ist, sowie eine Transporteinrichtung zum Transportieren des Bandsubstrats über die Mantelfläche, wobei die Größe, Anzahl und Anordnung der Kompartments dadurch variabel ist, dass die Trennwandelemente jeweils an einer von mehreren vorgegebenen Positionen innerhalb des Prozessraums anbringbar sind.

Target und Verfahren zur Herstellung eines Targets

Die Erfindung betrifft ein Target (2a) und ein Verfahren zur Herstellung eines Targets, wobei das Target aufweist: eine Targetplatte (14a), und eine Stabilisierungsschicht (16a), die mit der Rückseite der Targetplatte (14a) verbunden ist, wobei die Stabilisierungsschicht (16a) durch ein hochkinetisches Spritzverfahren von Stabilisierungsmaterial auf die Targetplatte (14a) hergestellt ist.

SPUTTERING TARGET HAVING INCREASED POWER COMPATIBILITY

The invention relates to a plate centering system, comprising a plate having a holder, wherein the plate is centered in the holder both at room temperatures and at higher temperatures, independently of the heat expansion of the plate and the holder, and wherein the plate can freely expand in the holder at higher temperatures. The invention relates in particular to a target having a target comprising a frame-shaped target mount, which is very well suited in a coating source for high power impulse magnetron sputtering of the target.

TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE

The invention relates to a device for cooling a target with a component which comprises a cooling duct and a further thermally conductive plate which is connected releasably to the cooling side of the component, wherein the cooling side is that side on which the cooling duct is effective, characterized in that, between the further thermally conductive plate and the cooling side of the component, provision is made of a first self-adhesive carbon film which is extensively adhesively bonded in a self-adhesive manner to a side of the further thermally conductive plate which faces the cooling side.

ARC EVAPORATION COATING SOURCE HAVING A PERMANENT MAGNET

The invention relates to an arc evaporation coating source (1), comprising: a target (2) made of a coating material to be evaporated, a ferromagnetic yoke (3) for influencing the evaporation of the coating material to be evaporated and at least one permanently magnetic body (4) for influencing the evaporation of the coating material to be evaporated. The ferromagnetic yoke (3) is arranged in contact with the target (2). The permanently magnetic body (4) is fastened to the target (2) by means of the ferromagnetic yoke (3).

Method and apparatus to produce high density overcoats

A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

Thin film manufacturing method, thin film manufacturing device, and liquid crystal display device manufacturing method

Provided is a thin film manufacturing method which is capable of reducing foreign matters to be adhered to a substrate in number while lowering the arcing count. The thin film manufacturing method involves placing a magnet unit ( 5 ) which includes a first magnet ( 51 ) and a second magnet ( 52 ). The first magnet ( 51 ) has a first polarity on its top face which is opposed to a target ( 94 ). The second magnet ( 52 ) has a second polarity on its top face and is arranged around the first magnet ( 51 ). The method also involves reducing a closest distance between an edge ( 52 a ) of the magnet unit ( 5 ) and an edge ( 94 a ) of the target ( 94 ) in a Y-direction as an amount of the target ( 94 ) used increases.

Substrate processing system with mechanically floating target assembly

Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

Manufacturing apparatus

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

Reactive sputter deposition of dielectric films

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

Misaligned sputtering systems for the deposition of complex oxide thin films

Thin film sputtering apparatus and methods for depositing thin films using the apparatus are provided. The sputtering apparatus comprise a sputtering chamber that houses a deposition substrate and a sputtering source configured to deposit a thin film of material onto the deposition substrate. The deposition substrate has a deposition surface with a central axis running parallel with the deposition surface normal. The magnetron sputtering source comprises two or more sputtering targets, each sputtering target having a sputtering surface with a central axis running parallel with the sputtering surface normal. The sputtering surfaces are disposed opposite the deposition surface, such that the sputtering surfaces face the deposition surface in a parallel or substantially parallel arrangement, and the central axes of the sputtering surfaces run parallel with, but are transversely offset with respect to, the central axis of the deposition surface.

Three Dimensional Metal Deposition Technique

A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

FILM FORMING APPARATUS AND FILM FORMING METHOD USING THE SAME

A film forming apparatus includes a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first axis, and a first cathode portion on which a target in a cylindrical shape containing a film forming material is mounted and configured to rotate the target about a second axis, in a chamber. The second axis is disposed at a position skewed with respect to the first axis. 1. A film forming apparatus comprising:a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first rotation axis;a first cathode portion configured to rotate a target in a first cylindrical shape about a second rotation axis; anda second cathode portion configured to rotate a target in a second cylindrical shape about a third rotation axis,whereinthe second rotation axis and the third rotation axis are disposed at positions skewed with respect to the first rotation axis,a relation of MaLb is satisfied, where La is a distance between the first rotation axis and the second rotation axis when viewed in the direction in which the first rotation axis extends and Lb is a distance between the first rotation axis and the third rotation axis when viewed in the direction in which the first rotation axis extends.2. The film forming apparatus according to claim 1 , whereinwhere, when viewed in the direction in which the first rotation axis extends, R is a radius of a circle drawn by points farthest from the first rotation axis within a film-formed surface of the base ...

TARGET STRUCTURE OF PHYSICAL VAPOR DEPOSITION

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation. 1. A target structure , comprising:a body having a first side and an opposing second side;a first sputtering target coupled to the first side of the body, the first sputtering target comprising a first material;a second sputtering target coupled to the second side of the body, the second sputtering target comprising a second material; anda rotation mechanism coupled to the body, the rotation mechanism configured to rotate the body.2. The target structure of claim 1 , wherein the first and second sputtering targets are magnetically coupled to the first and second sides of the body.3. The target structure of claim 1 , wherein the body includes a hole extending from the first side to the second side claim 1 , and wherein the first and second sputtering targets are coupled to respective first and second sides of the body by a coupling mechanism inserted through the hole.4. The target structure of claim 1 , wherein the first material and the second material are different materials.5. The target structure of claim 1 , wherein the first material comprises titanium nitride.6. The target structure of claim 1 , wherein the second material comprises an aluminum copper alloy.7. The target structure of claim 1 , wherein the rotation mechanism comprises at least one rotation shaft extending from the body.8. The target structure of claim 7 , wherein the at least one rotation shaft comprises a first rotation shaft and a second rotation shaft aligned on a longitudinal axis extending through a center of ...

SPUTTER DEVICES AND METHODS

Sputter devices comprise a vacuum supply, a gas supply, a substrate holding device, and sputter sources. Each sputter source is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point. The sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface. The source reference surface is parallel to the substrate reference surface. At least one of the sputter sources has a source distance deviating from zero. 1. A sputter device for sputtering deposition of a layer on a three-dimensionally shaped substrate surface of a substrate in a deposition area , the sputter device comprising in a deposition section of the sputter device:at least one vacuum supply for generation of a vacuum in the deposition section;a gas supply for introduction of process gas for the sputtering deposition in the deposition section;a substrate holding device for support of the substrate relative to a substrate reference surface of the substrate holding device; andsputter sources, each of which is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point, wherein the sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface, wherein the source reference surface is parallel to the substrate reference surface, wherein at least one of the sputter sources has a source distance deviating from zero, and wherein the source distance is measured between the source reference surface and the individual reference point of ...

Film forming apparatus

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

PROCESS FOR PRODUCING SPUTTERING TARGET AND SPUTTERING TARGET

A process for producing a sputtering target in which a target material is diffusion-bonded to a backing plate material having an annular frame part, the method comprising: 1. A sputtering target comprising:a backing plate material having an annular frame part; anda target material fit inside the frame part of the backing plate material;wherein the uppermost position of the target material is higher than the uppermost position of the frame part of the backing plate material in a height direction of the frame part of the backing plate material,said target material having a hardness smaller than the backing plate material.2. A bonded body for producing a sputtering target , comprising:a backing plate material having an annular frame part; anda target material fit inside the frame part of the backing plate material;wherein the uppermost position of the target material is higher than the uppermost position of the frame part of the backing plate material in a height direction of the frame part of the backing plate material,said target material having a hardness smaller than the backing plate material. This application is a Divisional application of co-pending application Ser. No. 15/771,196, filed on Apr. 26, 2018, which is the National Phase under 35 U.S.C. § 371 of International Application No. PCT/JP2017/025144, filed on Jul. 10, 2017, which claims the benefit under 35 U.S.C. § 119(a) to Patent Application No. 2016-138710, filed in Japan on Jul. 13, 2016, all of which are hereby expressly incorporated by reference into the present application.The present invention relates to a process for producing a sputtering target, and a sputtering target.Conventionally, as a process for producing a sputtering target, there is a method mentioned in JP H09-143707 A (Patent Document 1). In this process for producing a sputtering target, hot isostatic pressing capable of applying isotropic pressing (hot isotropic pressing method: hot isostatic press (HIP)) is conducted to thereby ...

METHODS AND APPARATUS FOR CO-SPUTTERING MULTIPLE TARGETS

Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets. 1. An apparatus for a process chamber with a plurality of targets , comprising:a process shield configured to be coupled to a carrier coupled to the plurality of targets, wherein the process shield is configured to extend between adjacent pairs of the plurality of targets and to move vertically and rotate with respect to the plurality of targets.2. The apparatus of claim 1 , wherein the process shield is star-shaped.3. The apparatus of claim 1 , wherein the plurality of targets includes five targets.4. The apparatus of claim 1 , wherein the process shield is configured to expose all of the plurality of targets.5. The apparatus of claim 4 , wherein a height of the process shield is proportional to a diameter of each of the plurality of targets.6. The apparatus of claim 5 , wherein each of the plurality of targets have a diameter of approximately 6 inches claim 5 , and wherein the process shield has a height of less than approximately 15 inches.7. The apparatus of claim 1 , wherein the process shield has a plurality of shrouds claim 1 , each surrounding a corresponding one of the plurality of targets.8. The apparatus of claim 7 , wherein each of the plurality of shrouds has a height of approximately 1 inch.9. The apparatus of claim 7 , wherein the plurality of shrouds are formed of aluminum.10. The apparatus of claim 9 , wherein the plurality of shrouds are texturized to improve particle adhesion of the plurality of shrouds.11. The apparatus of claim 7 , wherein each of the plurality of shrouds has a height of approximately 5 inches to ...

Deposition System With Multi-Cathode And Method Of Manufacture Thereof

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Sputtering apparatus and method

A deposition apparatus for depositing a layer of deposition material on a substrate is provided. The apparatus includes a substrate support adapted for holding the substrate; a target support ( 520 ) adapted for holding a target assembly. The target assembly includes a backing element and at least two target elements ( 510, 511 ) arranged on the backing element next to each other so that a gap ( 530 ) is formed between the at least two target elements. The gap between the target elements is to have a width (w). Further, the substrate support and the target support are arranged with respect to each other so that the ratio of distance between substrate and target ( 570 ) element to the gap width (w) is about 150 and greater.

System and method for balancing consumption of targets in pulsed dual magnetron sputtering (dms) processes

A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor and at least one capacitor; and adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN. The substrate is operatively coupled to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and plasma to the substrate. A corresponding apparatus and computer-readable medium are also disclosed. 1. A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron , the method comprising:positioning the HEDP magnetron in a vacuum with an anode, a cathode target, a magnet assembly, the substrate, and a feed gas;applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), the PCN comprising at least one inductor and at least one capacitor; andadjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN, the PCN converting the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron with pulse current densities in a range of about 0.1 to 20 A/cm2, the asymmetric AC signal operatively coupled to the cathode target, the asymmetric AC signal ...

Sputtering apparatus

A sputtering apparatus includes a shutter arranged having a first surface on a side of a substrate holder and a second surface on the opposite side, a first shield having a third surface including a portion facing the second surface and a fourth surface on the opposite side, a second shield having a fifth surface including a portion facing end portions of the shutter and the first shield, and a gas supply unit supplying a gas into a space arranged outside the first shield to communicate with a first gap between the second surface of the shutter and the third surface of the first shield. The second shield includes a protruding portion on the fifth surface to form a second gap between the protruding portion and the end portion of the shutter.

Sputtering system and method of fabricating display device using the same

A sputtering system includes a chamber, a plurality of targets, and a substrate holder. The targets are disposed in the chamber. Each target includes a magnet unit disposed therein. The substrate holder is configured to support a substrate in the chamber. The magnet units are configured to generate a magnetic field between the targets. Each of the magnet units includes magnets disposed in two rows.

Organic light emitting display apparatus using facing target sputtering apparatus and method of manufacturing the organic light emitting display apparatus

A method of manufacturing an organic light-emitting display apparatus includes preparing a deposition target in which an organic light-emitting portion is formed on a substrate, forming a pre-encapsulation layer for encapsulating the organic light-emitting portion by using a facing target sputtering apparatus, and forming an encapsulation layer by performing a plasma surface process on the pre-encapsulation layer by using the facing target sputtering apparatus. The facing target sputtering apparatus includes a chamber in which a mounting portion for accommodating the deposition target is provided, a gas supply portion facing the mounting portion and supplying gas to the chamber, a first target portion and a second target portion disposed in the chamber and facing each other, and an induced magnetic field coil surrounding the exterior of the chamber.

SPUTTERING APPARATUS AND FILM FORMING METHOD

A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden. 1. A sputtering apparatus comprising:a first target and a second target that emit sputter particles:a substrate support configured to support a substrate: anda slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass,wherein the slit unit includes a first slit to the first and the second target side and a second slit to the substrate side,the second slit has a first protrusion and a second protrusion protruding toward a center of the second slit,when the slit unit is viewed from the first target, the first protrusion is hidden, andwhen the slit unit is viewed from the second target, the second protrusion is hidden.2. The sputtering apparatus of claim 1 , further comprising:a substrate moving mechanism configured to move the substrate supported by the substrate support in a sliding direction,wherein the first target and the second target are arranged in the sliding direction of the substrate and inclined toward the slit unit.3. The sputtering apparatus of claim 1 , wherein the first slit limits a minimum incident angle of the sputter particles incident on the substrate from the first target and the second target claim 1 , andthe second slit limits a maximum incident angle of the sputter particles ...

METHOD FOR PREPARING HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND THIN FILM FORMING APPARATUS

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties. 1. An apparatus for forming a thin film to constitute a photomask blank , comprisinga substrate to constitute the photomask blank,plural targets,a gas supply for supplying a sputtering gas containing a rare gas and a nitrogen-containing gas, andmeans for causing electric discharge to the plural targets at the same time,wherein the thin film to constitute a photomask blank is formed by rotating the substrate on its axis, sputtering the plural targets, and depositing a thin film on the substrate,the plural targets are disposed such that provided that the rotational axis of the substrate and a vertical line passing the center of a sputter surface of each of the plural targets are parallel and spaced apart a distance, one target has the closest distance between the rotational axis and the vertical line, the distance between the rotational axis and the vertical line of another target is 1 to 3 times the distance between the rotational axis and the vertical line of the one target, and the angle included between normal lines extending from the rotational axis to vertical lines has a maximum value of 70° to 180°.2. The apparatus of wherein at least two normal lines extend from the rotational axis to vertical lines claim 1 , and any of the angles included between adjacent normal lines is in a range of 70° to 180°.3. The apparatus of wherein the plural targets are silicon targets.4. The apparatus of wherein a halftone ...

SPUTTERING APPARATUS INCLUDING GAS DISTRIBUTION SYSTEM

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight. 1. A method of using a magnetron sputtering apparatus that comprises a vacuum chamber having a controlled environment , the magnetron sputtering apparatus including a target comprising one or more sputterable materials , wherein the target includes a sputtering zone that is racetrack shaped and extends longitudinally along a longitudinal axis , the sputtering zone including two straightaway areas sandwiched between first and second turnaround areas , the magnetron sputtering apparatus further including a gas distribution system comprising a plurality of interfaces located along the longitudinal axis , wherein the plurality of interfaces comprises a plurality of first interfaces and a plurality of second interfaces , the first interfaces positioned at each of the first and second turnaround areas to supply a first gas mixture to both of the first and second turnaround areas , such that the first gas mixture controls sputtering rate at localized areas of both of the first and second turnaround areas , whereas the second interfaces are positioned at each ...

ENDBLOCK FOR ROTATABLE TARGET WITH ELECTRICAL CONNECTION BETWEEN COLLECTOR AND ROTOR AT PRESSURE LESS THAN ATMOSPHERIC PRESSURE

An endblock for a rotatable sputtering target, such as a rotatable magnetron sputtering target, is provided. A sputtering apparatus, including one or more such endblock(s), includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in the endblock(s) in an area under vacuum (as opposed to in an area at atmospheric pressure). 118-. (canceled)19. A method of making a coated article , the method comprising:sputtering a rotating target in a chamber at pressure less than atmospheric pressure to sputter-deposit a layer on a substrate, wherein the target is supported by an endblock, the endblock including a fixed conductive collector, a rotatable conductive rotor rotating with the sputtering target during said sputtering, an electrical power transfer structure located between the fixed conductive collector and the rotatable rotor for transferring electrical power from the collector to the rotor,providing the endblock in a position, so that during said sputtering the electrical power transfer structure, the rotor, and the collector are each located in the area under vacuum having pressure less than atmospheric pressure. Example embodiments of this invention relate to an endblock for a rotatable sputtering target such as a rotatable magnetron sputtering target. A sputtering apparatus design, including an endblock design, includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in an area under vacuum (as opposed to in an area at atmospheric pressure) which has been found to provide for significant advantages.Sputtering is known in the art as a technique for depositing layers or coatings onto substrates such as glass substrates. For example, a low-emissivity (low-E) coating can be deposited onto a glass substrate by successively sputter-depositing a plurality of different layers onto the substrate. As an example, a low-E coating may include the following layers in this order: glass substrate/SnO/ZnO/Ag/ ...

SPUTTERING APPARATUS AND METHOD

A sputtering apparatus includes: a first cylindrical target unit, a second cylindrical target unit facing the first cylindrical target unit; a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit; a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; and a power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes. 1. A sputtering apparatus , comprising:a first cylindrical target unit;a second cylindrical target unit facing the first cylindrical target unit;a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit;a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; anda power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes.2. The sputtering apparatus of claim 1 , wherein the power unit is configured to:provide power to the first cylindrical target unit and the third cylindrical target unit, such that the first cylindrical target unit and the third cylindrical target unit function as one of an anode or a cathode; andprovide power to the second cylindrical target unit and the fourth cylindrical target unit, such that the second cylindrical target unit and the fourth cylindrical target unit function as the other of the anode and the cathode.3. The sputtering apparatus of claim 1 , wherein the power unit is configured to:provide power to the first cylindrical target unit and the second cylindrical target unit, such that ...

Processing apparatus

The present invention provides a processing apparatus including a vacuum vessel, a plurality of electrodes arranged in the vacuum vessel, a plurality of power supplies configured to apply potentials to the plurality of electrodes, a detector configured to detect a potential in a process space between a substrate transferred into the vacuum vessel and each of the plurality of electrodes, and a controller configured to control phases of the potentials to be applied to the plurality of electrodes by the plurality of power supplies based on the potential detected by the detector.

METHODS AND APPARATUS FOR CO-SPUTTERING MULTIPLE TARGETS

Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets. 1. A process chamber , comprising:a substrate support to support a substrate;a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; anda process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.2. The process chamber of claim 1 , wherein the process shield is star-shaped.3. The process chamber of claim 1 , wherein the plurality of cathodes includes five cathodes.4. The process chamber of claim 1 , wherein all of the plurality of targets are exposed.5. The process chamber of claim 4 , wherein a height of the process shield is proportional to a diameter of each of the plurality of targets.6. The process chamber of claim 5 , wherein each of the plurality of targets have a diameter of about 6 inches claim 5 , and wherein the process shield has a height of less than about 15 inches.7. The process chamber of claim 1 , further comprising:a plurality of shrouds each surrounding a corresponding one of the plurality of targets.8. The process chamber of claim 7 , wherein each of the plurality of shrouds has a height of about 1 inch.9. The process chamber of claim 7 , wherein the plurality of shrouds are formed of aluminum.10. The process chamber of claim 9 , wherein the plurality of shrouds are texturized to improve particle adhesion of the plurality of shrouds.11. A physical vapor deposition (PVD) chamber claim 9 , comprising:a substrate support to support a substrate;a plurality of targets disposed opposite the substrate support, ...

FILM-FORMING APPARATUS, FILM-FORMING SYSTEM, AND FILM-FORMING METHOD

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly. 1. A film-forming apparatus comprising:a processing chamber defining a processing space in which a film-forming process is performed on a substrate;a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space;a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass;a substrate support configured to support the substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space;a substrate moving mechanism configured to linearly move the substrate supported on the substrate support; anda controller configured to control the first sputter-particle emitter, ...

Target adapted to an indirect cooling device

The invention relates to a target which is embodied as a material source for a depositing method from the gas phase, comprising a front side and a rear side, characterized in that a self-adhesive carbon film is applied to the rear side. Said target can be embodied as a material source for a sputtering method and/or for an arc evaporation method. A particular advantage is that the target is used in a coating source with indirect cooling, the self-adhesive carbon film being in contact with the surface of the membrane which is part of a cooling channel.

SPUTTERING APPARATUS

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means for driving to rotate the stage; a sputtering power source E for applying HF power to the insulator target; and a gas introduction means for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d between the substrate and the insulator target is set to a range between 40 mm-150 mm. 1. A sputtering apparatus comprising:a vacuum chamber having disposed therein an insulator target;a stage for holding thereon a substrate to be processed, the stage being disposed inside the vacuum chamber so as to face the insulator target;a driving means for driving to rotate the stage;a sputtering power source for applying HF power to the insulator target; anda gas introduction means for introducing a rare gas into the vacuum chamber;wherein a distance between the substrate and the sputtering surface of the insulator target is set to a range between 40 mm-150 mm.2. The sputtering apparatus according to claim 1 , wherein the insulator target is constituted by at least two target materials having a smaller area than the area of the substrate claim 1 , said at least two target materials being disposed on an identical plane that is parallel with the substrate held by the stage while being respectively offset from the center of the substrate.3. The sputtering apparatus according to claim 1 , further comprising: such another metal target having a gettering effect as is disposed on said plane; and another sputtering power source for supplying DC power to said another target.4. The sputtering apparatus according to claim 3 , further comprising a ...

METHOD FOR PREPARING HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND THIN FILM FORMING APPARATUS

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties. 1. A method for preparing a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon , the halftone phase shift film being composed mainly of silicon and nitrogen , consisting of a single layer whose composition is kept constant or continuously graded in thickness direction , or two layers including the single layer and a surface oxidized layer disposed on a side of the single layer remote from the substrate , providing a phase shift relative to the wavelength of ArF excimer laser , the phase shift having a median in film plane of 180±30° and a difference between maximum and minimum in film plane of up to 2° , and having a transmittance relative to the wavelength of ArF excimer laser , the transmittance having a median in film plane of 3 to 17% and a difference between maximum and minimum in film plane of up to 0.2% ,said method comprising the step of depositing the halftone phase shift film on a surface of the substrate by using a sputtering gas containing a rare gas and a nitrogen-containing gas, and plural targets including at least two silicon targets, applying powers of at least two different values to the at least two silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction.2. The method of wherein the deposition step includes reactive sputtering in transition mode so that the halftone phase shift ...

LI-CONTAINING OXIDE TARGET ASSEMBLY

Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger. 2. The Li-containing oxide target assembly according to claim 1 , which is manufactured under a non-aqueous condition.3. The Li-containing oxide target assembly according to wherein;a mean value of specific resistance of the Li-containing oxide sputtering target is smaller than or equal to 100 Ω·cm, anda maximum value of the specific resistance of the Li-containing oxide sputtering target is smaller than or equal to 1000 Ω·cm.4. The Li-containing oxide target assembly according to wherein;a content of C in the Li-containing oxide sputtering target is suppressed to smaller than 0.01% by mass, anda content of Si in the Li-containing oxide sputtering target is suppressed to smaller than 0.01% by mass.5. The Li-containing oxide target assembly according to wherein;a surface roughness Ra of the Li-containing oxide sputtering target is larger than or equal to 0.1 μm and smaller than or equal to 3.0 μm. The present invention is related to a Li-containing oxide target assembly produced by bonding a Li-containing oxide sputtering target and a backing plate through a bonding material as typified by a brazing material.Thin film secondary batteries comprising a Li-containing transition metal oxide such as lithium cobaltate or a Li-containing phosphate compound such as lithium phosphate are capable of charging and discharging, thin in thickness, and light in weight. Taking advantage of the features, the thin film secondary batteries comprising such a Li-containing compound are used in ...

DEPOSITION DEVICE

Provided is a deposition device which can secure work space without vertical overlap of the deposition unit and the units upstream and downstream thereof. This deposition device is provided with a deposition unit (), and upstream and downstream units () arranged to the left and right thereof. The deposition unit () is provided with: a deposition roller (); multiple guide rollers (); a main chamber () having a deposition roller housing unit () and, thereabove, a guide roller housing unit (); first and second process chambers () which house multiple deposition process devices () to the left and right of the deposition roller housing unit (); and process chamber support units () for supporting the first and second process chambers () so as to allow the first and second process chambers () to move between a regular position for deposition and a retracted position retracted to the left or right, and between the retracted position and an exposure position separated in the front/back direction. 1. A deposition device performing deposition on a surface of a belt-shaped film substrate while conveying the film substrate in the longitudinal direction thereof , comprising:a deposition unit, an upstream unit arranged on the upstream side in the conveying direction of the film substrate than the deposition unit, and a downstream unit arranged on the downstream side in the conveying direction of the film substrate than the deposition unit, whereinthe deposition unit has a deposition roller rotatable around a horizontal rotation center axis, a plurality of deposition process devices arranged around the deposition roller, a plurality of guide rollers arranged so as to guide the film substrate between the upstream and downstream units and the deposition roller, a main chamber having a deposition roller housing unit which houses the deposition roller and a guide roller housing unit which is located on the upper side thereof and houses at least a part of the guide rollers, first and ...

BACKING PLATE-INTEGRATED METAL SPUTTERING TARGET AND METHOD OF PRODUCING SAME

Provided is a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging. By increasing the mechanical strength of only the flange part of the target in a backing plate-integrated sputtering target as described above, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved. 1. A backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate , wherein the flange part comprises a structure obtained by repeating partial forging , and an outer periphery of the target after forging is machined to eliminate portions containing strain resulting from forging.2. (canceled)3. The backing plate-integrated metal sputtering target according to claim 1 , wherein the backing plate-integrated metal sputtering target is of a disk shape claim 1 , an oval shape or a rectangular shape.4. The backing plate-integrated metal sputtering target according to claim 3 , wherein the backing plate-integrated metal sputtering target is made from titanium or titanium alloy claim 3 , and Vickers hardness Hv of the flange part that acts as a backing plate is 110 or more.5. A method of producing a backing plate-integrated metal sputtering target claim 3 , wherein claim 3 , upon forging a flange part that acts as a backing plate claim 3 , partial forging is performed claim 3 , and the flange part is obtained by ultimately forging an entire outer periphery of a material claim 3 , and an outer periphery of the target is machined after ...

Sputter target magnet

A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.

HOUSING, MOBILE TERMINAL, AND SPUTTER COATING APPARATUS

An enclosure of a mobile terminal and a sputter coating apparatus for making the same are provided. The enclosure includes a substrate and a composite film layer coated onto the substrate. The composite film layer has a thickness changing along a first direction. A difference in thickness between any two regions arranged along the first direction of the composite film layer is less than or equal to 350 nanometers. The enclosure has a spatially varying color corresponding to a wavelength between 400 nanometers and 760 nanometers. 1. An enclosure of a mobile terminal , comprising:a substrate; anda composite film layer coated onto the substrate, having a thickness changing along a first direction, a difference in thickness between any two regions arranged along the first direction of the composite film layer being less than or equal to 350 nanometers, the enclosure having a spatially varying color corresponding to a wavelength between 400 nanometers and 760 nanometers.2. The enclosure according to claim 1 , wherein the thickness of the composite film layer changes along a second direction claim 1 , wherein the second direction is different from the first direction.3. The enclosure according to claim 2 , wherein an angle between the second direction and the first direction is less than or equal to 90° claim 2 , and change trends of the thicknesses of the composite film layer in the first direction and the second direction are the same.4. The enclosure according to claim 1 , wherein the composite film layer comprises a first film layer and a second film layer arranged in a stack claim 1 , the first film layer having a first coating material of a first refractive index claim 1 , and the second film layer having a second coating material of a second refractive index claim 1 , and change trends of thicknesses of the first film layer and the second film layer in a same direction are the same.5. The enclosure according to claim 4 , wherein the first film layer is made of a ...

DUAL-TARGET SPUTTER DEPOSITION WITH CONTROLLED PHASE DIFFERENCE BETWEEN TARGET POWERS

System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific. 1. A physical vapor deposition apparatus comprising:a first sputter target coupled to a first high frequency (HF) power signal;a second sputter target coupled to a second HF power signal, wherein the first HF power signal and the second HF power signal are concurrently applied to said first sputter target and said second sputter target respectively; anda phase adjuster coupled to said first HF power signal and said second HF power signal and configured to adjust a phase difference between said first HF power signal and said second HF power signal.2. The physical vapor deposition apparatus of claim 1 , wherein said first HF power signal is generated by a first power supply claim 1 , wherein said second HF power signal is generated by a second power supply claim 1 , and wherein further said phase adjuster is configured to adjust said phase difference between said first HF power signal and said second HF power signal to a first predetermined value.3. The physical vapor deposition apparatus of claim 1 , wherein said first target and said second target have a same geometry and comprise a first target material.4. The physical vapor deposition apparatus of claim 3 , wherein said first target material comprises an insulating material selected from a group consisting of: magnesium oxide; aluminum oxide; titanium oxide; nickel oxide; gallium oxide; nickel oxide; and silver oxide.5. The physical vapor deposition apparatus of claim 2 , wherein said first predetermined value is ...

SINGLE OXIDE METAL DEPOSITION CHAMBER

Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets. 1. A deposition chamber , comprising:a gas distribution plate disposed in a chamber body;one or more metal targets disposed in the chamber body; anda substrate support disposed below the gas distribution plate or the one or more metal targets.2. The deposition chamber of claim 1 , further comprising one or more shields disposed between the gas distribution plate and the one or more metal targets.3. The deposition chamber of claim 2 , wherein the gas distribution plate is disposed in a first portion of the chamber body and wherein the first portion is defined by a column extending from the gas distribution plate.4. The deposition chamber of claim 3 , wherein the one or more shields are disposed adjacent to and at an acute angle less than 90 degrees from the column.5. The deposition chamber of claim 1 , wherein the one or more metal targets are disposed in a second portion of the chamber body.6. The deposition chamber of claim 5 , wherein the second portion of the chamber body surrounds the first portion of the chamber body.7. The deposition chamber of claim 2 , wherein the substrate support is moveable in the vertical direction.8. A ...

DEPOSITION APPARATUS FOR BOTH LATERAL PORTIONS OF SUBSTRATE

Disclosed is a deposition apparatus for a substrate, in particular, a deposition apparatus for both lateral portions of a substrate, in which at least one substrate is inserted in and mounted to a revolvably disposed substrate mounting drum in a direction from an outside circumferential surface toward an inside circumferential surface, one lateral portion of the substrate exposed protruding from an inside circumferential surface is subjected to deposition based on an inside source target, and the other lateral portion of the substrate exposed protruding from an outside circumferential surface is subjected to deposition based on an outside source target, thereby depositing wiring to both lateral portions of the substrate at once, and achieving a three-dimensional (3D) deposition improved in uniformity and quality. 1. A deposition apparatus for both lateral portions of a substrate , comprising:a substrate mounting drum revolvably disposed inside a chamber and allowing at least one substrate to be inserted and mounted in a direction from an outside circumferential surface toward an inside circumferential surface;at least one inside source target configured to deposit wiring onto one lateral portion of the substrate exposed protruding from an inside circumferential surface of the substrate mounting drum; andat least one outside source target configured to deposit wiring onto the other lateral portion of the substrate exposed protruding from an outside circumferential surface of the substrate mounting drum.2. The deposition apparatus according to claim 1 , wherein the inside source target and the outside source target are arranged not to face with each other.3. The deposition apparatus according to claim 1 , further comprising at least one cooling block disposed inside the substrate mounting drum and configured to cool the respective substrates claim 1 ,wherein the cooling block comprises a cooling plate disposed to face the substrate, a cooling line for circulating a ...

Sputtering apparatus including gas distribution system

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.

VACUUM DEPOSITION COMPOSITE TARGET

A vacuum deposition composite target includes a plurality of target blocks each including a target body, an insulating layer and a high-resistance-conductive layer. The target body has a top surface, a bottom surface and a peripheral surface connected between the top and bottom surfaces. The insulating layer is formed on the peripheral surface. The high-resistance-conductive layer is formed on the bottom surface of the target body and has a resistance higher than that of the target body. The target blocks are juxtaposed to each other. Each of the target blocks has a modulated resistance. A modulated resistance difference between any two adjacent ones of the target blocks is not greater than 5%. 1. A vacuum deposition composite target , comprising a plurality of target blocks , each of said target blocks including:a target body having a top surface, a bottom surface opposite to said top surface, and a peripheral surface connected between said top surface and said bottom surface;an insulating layer formed on said peripheral surface and surrounding said target body; anda high-resistance-conductive layer formed on said bottom surface of said target body and having a resistance higher than that of said target body,wherein said target blocks are juxtaposed to each other in such a manner that said peripheral surfaces of the target bodies are adjacent to each other; andwherein each of said target blocks has a modulated resistance modulated by said high-resistance-conductive layer, a modulated resistance difference between any two adjacent ones of said target blocks is not greater than 5%.2. The vacuum deposition composite target of claim 1 , wherein said high-resistance-conductive layer of each of said target blocks has a resistance value that is at least three orders of magnitude greater than that of said target body claim 1 , where the order of magnitude is defined by a power of ten.3. The vacuum deposition composite target of claim 1 , wherein said target blocks include ...

SPUTTERING TARGET-BACKING PLATE ASSEMBLY

The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal. 1. A sputtering target-backing plate assembly configured by bonding a sputtering target , and a backing plate having a thermal expansion rate that is greater than that of the sputtering target , wherein the sputtering target is made from Ta having a 0.2% proof stress of 150 to 200 MPa , and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa.2. The sputtering target-backing plate assembly according to claim 1 , wherein the backing plate is made from a Cu alloy having a 0.2% proof stress of 100 to 150 MPa.3. The sputtering target-backing plate assembly according to claim 1 , wherein the backing plate contains 30 to 40 at % of Zn claim 1 , and remainder is Cu. The present invention relates to a sputtering target-backing plate assembly comprising characteristics that are required in magnetron sputtering.Conventionally, the sputtering method capable of easily controlling the film thickness and components has been broadly used as one type of deposition method of materials for electronic/electric components. Moreover, in order to increase the sputtering deposition rate, a magnetron sputtering device, which controls the plasma based on electromagnetic force, has been broadly used in particular. Moreover, while the power input to the sputtering target is being increased as much as possible in order to increase the deposition rate, in the foregoing case, ...

ROTATABLE SPUTTER TARGET

A target arrangement for providing material to be deposited on a substrate is provided. The target arrangement includes a target part () made of the material to be deposited. The target part may substantially have the shape of a hollow cylinder having an inner () and an outer () diameter, wherein the hollow cylinder includes a cylindrical surface () and two face surfaces (). The target arrangement may further include a connection arrangement comprising a recess () within at least one of the face surfaces of target part. Also, a deposition apparatus including the target arrangement and a method for mounting a target arrangement in a deposition chamber are described. 1. A target arrangement for providing material to be deposited on a substrate , comprising:a target part made of the material to be deposited, having substantially the shape of a hollow cylinder having an inner diameter and an outer diameter, wherein the hollow cylinder comprises a cylindrical surface and two face surfaces; anda connection arrangement comprising a recess within at least one of the face surfaces of the target part, wherein the target arrangement is rotatable.2. The target arrangement according to claim 1 , wherein the recess is a bore.3. The target arrangement according to claim 1 , wherein the target part is a one-piece target part.4. The target arrangement according to claim 1 , wherein the material to be deposited is Al or Cu.5. The target arrangement according to claim 1 , wherein the difference between the inner diameter and the outer diameter in radial direction is about 30 mm or greater.6. The target arrangement according to claim 1 , wherein the material of the target part provides a Mohs hardness in the range from about 2.5 to about 3.5.7. The target arrangement according to claim 1 , wherein the connection arrangement further comprises an insert provided within the recess.8. The target arrangement according to claim 2 , wherein the bore or the insert comprises a thread configured ...

SPUTTERING SHOWERHEAD

In one implementation, a sputtering showerhead assembly is provided. The sputtering showerhead assembly comprises a faceplate comprising a sputtering surface comprising a target material and a second surface opposing the sputtering surface, wherein a plurality of gas passages extend from the sputtering surface to the second surface. The sputtering showerhead assembly comprises further comprises a backing plate positioned adjacent to the second surface of the faceplate. The backing plate comprises a first surface and a second surface opposing the first surface. The sputtering showerhead assembly has a plenum defined by the first surface of the backing plate and the second surface of the faceplate. The sputtering showerhead assembly comprises further comprises one or more magnetrons positioned along the second surface of the backing plate. 1. A deposition chamber , comprising:a chamber body; [ a sputtering surface comprising a target material; and', 'a second surface opposing the sputtering surface, wherein a plurality of gas passages extend from the sputtering surface to the second surface;, 'a faceplate comprising, a first surface; and', 'a second surface opposing the first surface, wherein a plenum is defined by the first surface of the backing plate and the second surface of the faceplate;, 'a backing plate positioned adjacent to the second surface of the faceplate and comprising, 'one or more magnetrons positioned along the second surface of the backing plate; and, 'a sputtering showerhead assembly, comprisinga substrate support disposed below the sputtering showerhead assembly, wherein the chamber body and the sputtering showerhead assembly define an interior volume.2. The deposition chamber of claim 1 , wherein the target material is selected from the group consisting of nickel claim 1 , chromium claim 1 , aluminum claim 1 , copper claim 1 , tantalum claim 1 , tantalum nitride claim 1 , tantalum carbide claim 1 , tungsten claim 1 , tungsten nitride claim 1 , ...

ARC EVAPORATION COATING SOURCE HAVING A PERMANENT MAGNET

An arc evaporation coating source includes a target made of a coating material to be vapor-deposited, a ferromagnetic yoke for influencing the vapor deposition of the coating material to be vapor-deposited and at least one permanent-magnetic body for influencing the vapor deposition of the coating material to be vapor-deposited. The ferromagnetic yoke is disposed in contact with the target. The permanent-magnetic body is fastened to the target by the ferromagnetic yoke. 110-. (canceled)11. An arc evaporation coating source , comprising:a target made of a coating material to be vapor-deposited;a ferromagnetic yoke for influencing a vapor deposition of said coating material to be vapor-deposited, said ferromagnetic yoke being disposed in contact with said target; andat least one permanent-magnetic body for influencing said vapor deposition of said coating material to be vapor-deposited, said permanent-magnet body being fastened to said target by said ferromagnetic yoke.12. The arc evaporation coating source according to claim 11 , wherein said ferromagnetic yoke and said target are connected to one another by a mechanical connection.13. The arc evaporation coating source according to claim 11 , wherein said ferromagnetic yoke and said target are connected to one another by a threaded connection.14. The arc evaporation coating source according to claim 11 , wherein said target has an external thread claim 11 , said ferromagnetic yoke has an internal thread claim 11 , and said external and internal threads interact with one another.15. The arc evaporation coating source according to claim 11 , wherein said target has a rear side claim 11 , and said ferromagnetic yoke is disposed on said rear side.16. The arc evaporation coating source according to claim 11 , wherein said target has a rear side claim 11 , and said ferromagnetic yoke is substantially pot-shaped and surrounds said rear side.17. The arc evaporation coating source according to claim 11 , wherein said ...

RADIO FREQUENCY IDENTIFICATION IN-METAL INSTALLATION AND ISOLATION FOR SPUTTERING TARGET

A RFID tag containment combination for a sputter target/backing plate assembly. A bore is provided in either the target or the backing plate and is adapted for snug receipt of a plug therein. The plug comprises a recessed portion thereof configured to carry the RFID tag therein. 1. In a sputter target/backing plate assembly , an RFID tag containment combination comprising:a bore formed in one of the backing plate or sputter target and a plug adapted for snug insertion into said bore;said plug comprising an outer face, a recessed portion and a solid section, said solid section of said plug bordering at least a portion of said recessed portion;said recessed portion configured to firmly receive said RFID tag therein.2. Combination as recited in wherein said bore is disposed along a peripheral portion of said backing plate.3. Combination as recited in wherein said outer face of said plug and said peripheral portion of said backing plate together define a planar surface.4. Combination as recited in further comprising an O-ring sealing said plug in said bore claim 3 , wherein said plug comprises a peripheral groove claim 3 , a second groove formed along a surface of said bore claim 3 , said peripheral groove and said second groove providing a mating interfacial surface upon said snug insertion of said plug in said bore claim 3 , said O-ring being seated along said interfacial surface.5. Combination as recited in wherein said plug recess comprises a tool installation concavity adapted for insertion of a tool therein to facilitate placement of said chip in said recess.6. Combination as recited in wherein said plug recess is defined by a parallelogram claim 5 , each side of which is connected to another at a radiused section.7. Combination as recited in wherein each said side is equally distanced from the cross-sectional boundary of said plug.8. Combination as recited in wherein said parallelogram is a rectangle.9. Combination as recited in wherein said plug is snap fit into ...

Magnetically Enhanced Low Temperature-High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded. 1. A magnetically enhanced high-density plasma apparatus comprising:a hollow cathode target assembly;an anode positioned on top of the hollow cathode target assembly, thereby forming a gap between the anode and the hollow cathode target assembly;a cathode magnet assembly;a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode target assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode target assembly;an electrode positioned adjacent to the row of magnets behind the gap;a pulse power supply coupled to the electrode; anda radio frequency (RF) power supply coupled to the hollow cathode target assembly, the RF power supply igniting and sustaining plasma in the hollow cathode target assembly, a frequency and power of the RF power supply being selected to increase at least one of a degree of dissociation of feed gas molecules, degree ...

PHYSICAL VAPOR DEPOSITION TILE ARRANGEMENT AND PHYSICAL VAPOR DEPOSITION ARRANGEMENT

In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together. 1. A physical vapor deposition tile arrangement , comprising:a plurality of physical vapor deposition tiles arranged next to each other; anda resilient structure configured to press the plurality of physical vapor deposition tiles together.2. The physical vapor deposition tile arrangement of claim 1 ,wherein at least one physical vapor deposition tile of the plurality of physical vapor deposition tiles comprises material to be deposited on a substrate.3. The physical vapor deposition tile arrangement of claim 1 ,wherein the plurality of physical vapor deposition tiles are sputter target tiles.4. The physical vapor deposition tile arrangement of claim I claim 1 ,wherein the resilient structure is arranged at an edge of at least one of the plurality of physical vapor deposition tiles.5. The physical vapor deposition tile arrangement of claim 4 ,wherein the resilient structure is arranged at an edge of the physical vapor deposition tile arrangement.6. The physical vapor deposition tile arrangement of claim 1 ,wherein the resilient structure is in physical contact with only one side of the physical vapor deposition tile arrangement.7. The physical vapor deposition tile arrangement of claim 1 ,wherein the resilient structure comprises at least one spring.8. The physical vapor deposition tile arrangement of claim 7 ,wherein the at least one spring comprises at least one screw spring.9. The physical vapor deposition tile arrangement of claim 7 ,wherein the at least one spring comprises at least one leaf spring.10. The physical vapor deposition tile arrangement of claim 1 , further comprising:a pressure distribution structure arranged between the resilient ...

PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS

In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films. 169.-. (canceled)70. A partially refurbished sputtering target comprising:a target plate (i) comprising a target material and (ii) having a surface contour defining (a) a top surface and (b) a recessed region having a surface recessed below the top surface; anddisposed on the target plate adjacent the recessed region, a layer of unmelted metal powder (i) having a top surface (a) approximately coplanar with the top surface of the target plate or (b) recessed below the top surface to a depth no deeper than a depth of the surface of the recessed region, and (ii) having an interface with the plate disposed at a depth deeper than the surface of the recessed region.71. The partially refurbished sputtering target of claim 70 , wherein the top surface of the layer of unmelted metal powder is approximately coplanar with the top surface of the target plate.72. The partially refurbished sputtering target of claim 70 , wherein the top surface of the layer of unmelted metal powder is recessed below the top surface to a depth shallower than the depth of the surface of the recessed region.73. The partially refurbished sputtering target of claim 70 , wherein the top surface of the layer of unmelted metal powder is recessed below the top surface to a depth substantially equal to the depth of the surface of the recessed region.74. The partially refurbished sputtering target of claim 70 , further comprising a sputtering tool in which the target plate is disposed.75. The partially refurbished ...

FILM FORMING APPARATUS AND FILM FORMING METHOD

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering. 1. A film forming apparatus comprising:a processing container;a substrate holder configured to hold a substrate inside the processing container;a cathode unit disposed above the substrate holder; anda gas introducing mechanism configured to introduce a plasma generating gas into the processing container,wherein the cathode unit further comprises:a target configured to emit sputtered particles to the substrate;a power supply configured to supply electric power to the target;a magnet provided on a rear side of the target, and configured to apply a leakage magnetic field to the target; anda magnet driving part configured to drive the magnet, andwherein the magnet driving part comprises:an oscillation driver configured to oscillate the magnet along the target; anda perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver,wherein magnetron plasma is formed near the target, and the sputtered particles are deposited on the substrate by magnetron sputtering.2. The film forming apparatus of claim 1 , ...

Extreme Ultraviolet Lithography Mask Blank Manufacturing System And Method Of Operation Therefor

A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

Hybrid deposition system

A hybrid deposition system includes a chamber, a pump, a gas source, a cathodic arc source, a high power impulse magnetron sputtering source and a substrate. The pump is connected with an interior of the chamber for changing a pressure of the interior of the chamber. The gas source is connected with the interior of the chamber for providing a gas into the interior of the chamber. The cathodic arc source is connected with the chamber and includes a first target disposed in the interior of the chamber. The high power impulse magnetron sputtering source is connected with the chamber and includes a second target disposed in the interior of the chamber. The substrate is disposed in the interior of the chamber and corresponded to the first target and the second target.

REACTIVE SPUTTER DEPOSITION OF DIELECTRIC FILMS

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film. 120-. (canceled)21. A method , comprising:supplying a reactive gas to a reactive gas source that is inside a chamber;releasing, from the reactive gas source, the reactive gas into the chamber in a manner that causes the reactive gas to react with silicon atoms and form a silicon dioxide layer on a substrate; andadding a catalyst to the chamber in a manner that increases a deposition rate of the silicon dioxide layer without impacting optical absorption spectra of deposited silicon dioxide film.22. The method of claim 21 , wherein the reactive gas source is a plasma-activated reactive gas source.23. The method of claim 21 , further comprising:loading the substrate into a substrate holder before the silicon dioxide layer is formed on the substrate.24. The method of claim 21 , further comprising:activating a vacuum pump that that pumps out air from the chamber.25. The method of claim 21 , further comprising:injecting a sputtering gas, via a sputtering gas inlet, to a pre-defined pressure within the chamber.26. The method of claim 21 , further comprising:applying a voltage to one or more cathode targets in a manner that causes the silicon atoms to move from the one or more cathode targets towards the substrate and adhere to the substrate.27. The method of claim 21 , wherein the reactive gas comprises oxygen.28. The method of claim 21 , wherein the reactive gas reacts with the silicon atoms when the silicon atoms are adhered to the substrate.29. The method of claim 21 , wherein the reactive gas reacts with the ...

Ion Source Device, Sputtering Apparatus and Method

An ion source device () includes a first magnetron cathode () and a second magnetron cathode (), each having a respective central longitudinal axis (M, M) and an ion source unit () that emits ions to pass through a space between the cathodes, a surface () of the ion source unit facing generally the cathodes, the central longitudinal axes being spaced apart from each other by a distance A, a shortest line (D) joining a surface of the cathodes is of a distance B, a centre of the ion source unit lying on a line (E) perpendicular to and bisecting the shortest line, the shortest distance between the surface of the ion source unit and the shortest line is C, with B>10 mm and C<4 A. 1. An ion source device including:at least a first magnetron cathode and a second magnetron cathode, each having a respective central longitudinal axis, andan ion source unit with a surface facing generally said first magnetron cathode and said second magnetron cathode,wherein said ion source unit is adapted to emit ions to pass through a space between said first magnetron cathode and said second magnetron cathode.2. A device according to claim 1 , wherein said central longitudinal axis of said first magnetron cathode and said central longitudinal axis of said second magnetron cathode are spaced apart from each other by a distance A claim 1 , wherein a shortest line joining a surface of said first magnetron cathode and a surface of said second magnetron cathode is of a distance B claim 1 , wherein a centre of said ion source unit lies on a line substantially perpendicular to and bisecting said shortest line claim 1 , wherein a shortest distance between said surface of said ion source unit and said shortest line is C claim 1 , and wherein B>10 mm and C<4 A.3. A device according to claim 1 , wherein at least one of said first magnetron cathode and said second magnetron cathode is in a shape of a cylinder or rectangular prism.4. A device according to claim 1 , wherein said ion source unit is in a ...

Thin-film formation sputtering device

A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device includes a target holder provided in a vacuum container, a substrate holder facing the target holder, a means for introducing a plasma generation gas into the vacuum container, a means for generating an electric field for sputtering in a region including a surface of a target, an antenna placement room provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window, and a radio-frequency antenna, which is provided in the antenna placement room, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder.

Device and method for producing layers with improved uniformity in coating systems with horizontally rotating substrate guiding

The invention relates to a device and a method for producing layers with very good uniformity in coating systems with horizontally rotating substrate guiding. Alternatively, certain layer thickness gradients can be set. The particle loading is also significantly reduced. The service life is much higher compared to other methods. Parasitic coatings are reduced. The coating rate is also increased.

High throughput Vacuum Deposition Sources and System

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber. 1. A high throughput deposition apparatus , comprising:a process chamber;a plurality of deposition sources that form a first closed loop in the process chamber;a first substrate carrier assembly configured to hold one or more substrates inside the first closed loop, wherein the one or more substrates are configured to face outward to receive a deposition material from the plurality of deposition sources in the first closed loop, wherein the deposition sources are configured to produce vapor for chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD); anda transport mechanism configured to move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.2. The high throughput deposition apparatus of claim 1 , further comprising:a plurality of deposition sources that form a second closed loop in the process chamber; anda second substrate carrier assembly configured to hold one or more substrates and configured to receive a deposition material from the plurality of deposition sources in the second closed loop, wherein the one or more substrates held by the second substrate carrier assembly are parallel to the one or more substrates held by the first substrate carrier assembly.3. The high throughput deposition apparatus of claim 1 , wherein the ...

METHOD AND APPARATUS FOR SPUTTER DEPOSITION

Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path. 1. A sputter deposition apparatus comprising:a substrate guide arranged to guide a substrate along a curved path;a target assembly comprising:a target portion spaced from the substrate guide and arranged to support target material, the target portion and the substrate guide defining between them a deposition zone; andbiasing means for applying electrical bias to the target material; anda confining arrangement comprising one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the substrate in use, the confining magnetic field being characterised by magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.2. The apparatus according to claim 1 , wherein the biasing means is configured to apply electrical bias having negative polarity to the target material.3. The apparatus according to claim 1 , ...

RESISTIVE SWITCHING MEMORY INCLUDING RESISTIVE SWITCHING LAYER FABRICATED USING SPUTTERING AND METHOD OF FABRICATING THE SAME

Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer. 1. A method of fabricating a Resistive Random Access Memory (ReRAM) , the method comprising:a step of forming a lower electrode on a substrate;a step of forming a resistive switching layer on the lower electrode using sputtering; anda step of forming an upper electrode on the resistive switching layer,wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.2. The method according to claim 1 , wherein claim 1 , in the step of forming a resistive switching layer on the lower electrode using sputtering claim 1 , a thickness of the resistive switching layer is controlled by adjusting a density of plasma applied to the substrate.3. The method according to claim 1 , wherein a deposition rate of the resistive switching layer is controlled by adjusting a first distance claim 1 , in a horizontal direction claim 1 , between the first or second target and the substrate.4. The method according to claim 1 , wherein a deposition rate (growth rate) of the resistive switching layer is controlled by ...

COOLING WATER JET PACK FOR HIGH POWER ROTARY CATHODES

A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube. 1. A sputtering target assembly , comprising:a cylindrical backing tube;a magnet assembly disposed within the backing tube, such that a gap volume is formed between the magnet assembly and an inner surface of the backing tube; anda conduit disposed within the backing tube and configured to provide coolant directly into the gap volume, at an angle α of 45° or less, wherein:the angle α is taken with respect to a first line along which coolant initially flows out of the conduit, and a second line tangential to the backing tube at a point where the first line intersects the inner surface of the backing tube; andsubstantially all of the coolant in the gap volume flows in a single circumferential direction that is substantially perpendicular to a longitudinal axis of the cylindrical backing tube.2. The sputtering target assembly of claim 1 , wherein:the magnet assembly extends substantially parallel to the longitudinal axis of the cylindrical backing tube;the magnet assembly comprises a first end, a second end, and a side portion extending between the first and second end; a coolant plenum; and', 'a coolant channel fluidly connected to the coolant plenum and located adjacent to the side portion of the magnet assembly;, 'the conduit comprisesthe coolant plenum is disposed within the backing tube adjacent to a back portion of the magnet assembly;the coolant plenum is adapted to stiffen the magnet assembly;the coolant plenum contains an inlet located at a first end of the backing ...

Sputtering apparatus and method of manufacturing magnetic memory device using the same

Provided are sputtering apparatuses and methods of manufacturing magnetic memory devices. The sputtering apparatus includes a process chamber, a stage in the process chamber and configured to load a substrate thereon, and a first sputter gun above the substrate in the process chamber. The first sputter gun is horizontally spaced apart from the substrate. The first sputter gun includes a first target including a first end and a second end, the first end being horizontally closer to the substrate than the second end. A first surface of the first target is inclined relative to a top surface of the substrate. A height of the second end of the first target relative to the top surface of the substrate is greater than that of the first end of the first target.

Deposition apparatus and method of manufacturing organic light emitting display apparatus using the same

A deposition apparatus includes a chamber, a chamber, a substrate placing unit which is located in the chamber and on which a substrate is placed, and a sputter unit for forming a thin film on the substrate. The sputter unit includes a first target unit and a second target unit facing the first target unit. A pair of targets are mounted on each of the first target unit and the second target unit. Argon gas is directly injected between the pair of targets. Accordingly, plasma may be more effectively and stably formed. A method of manufacturing an organic light-emitting display apparatus using the deposition apparatus is also disclosed.

Methods for addressing inboard-outboard asymmetry in substrate processing

Methods for performing ion beam deposition in a manner that substantially reduces or substantially eliminates the inboard-outboard asymmetry problem are disclosed. The method includes selecting an optimal deposition plume on test substrates and determining whether the optimal deposition plume is directed more toward the top or the bottom of a test substrate. If the optimal deposition plume is directed more toward the top of the test substrate, the production substrate is tilted negatively during production processing. If the optimal deposition plume is directed more toward the bottom of the test substrate, the production substrate is tilted positively during production processing.

SPUTTERING TARGET

A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance. 1. A sputtering target comprising a flat part and a tapered part on a sputtering surface , wherein a machined groove is arranged on a tapered part of the sputtering target.2. The sputtering target according to claim 1 , wherein an area ratio of the machined groove of the tapered part of the sputtering surface is 0.6% or more.3. The sputtering target according to claim 2 , wherein an area ratio of the machined groove of the flat part of the sputtering surface is 10% or less.4. The sputtering target according to claim 3 , wherein a depth of the machined groove is 0.1 mm or more.5. The sputtering target according to claim 4 , wherein the sputtering target is formed from tantalum having a purity of 4N5 or higher.6. The sputtering target according to claim 5 , wherein a cross-section shape of the machined groove is a V-shape claim 5 , a U-shape claim 5 , or a square shape.7. The sputtering target according to claim 1 , wherein an area ratio of the machined groove of the flat part of the sputtering surface is 10% or less.8. The sputtering target according to claim 1 , wherein a depth of the machined groove is 0.1 mm or more.9. The sputtering target according to claim 1 , wherein the sputtering target is formed from tantalum having a purity of 4N5 or higher.10. The sputtering target according to claim 1 , wherein a cross-section shape of the machined groove is a V-shape claim 1 , a U-shape claim 1 , or a square shape. The present invention relates to a sputtering target capable of stably performing ...

FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING

Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less. 120-. (canceled)21. A system for processing memory , comprising:a structure; and the target is configured to form the crystallized RRAM cell material on the structure in a conventional physical vapor deposition (PVD) chamber having a temperature of approximately 400 degrees Celsius or less; and', 'the target is configured to form the crystallized RRAM cell material on the structure such that the crystallized RRAIVI cell material on the structure has an ionization of at least 80%., 'a target facing toward the structure and configured to form a crystallized resistive random access memory (RRAM) cell material on the structure, wherein22. The system of claim 21 , wherein the target is configured to:receive a first pulse of at least 1 kilowatt for a duration of approximately 1 to 300 microseconds; andreceive a second pulse of at least 1 kilowatt for a duration of approximately 1 to 300 microseconds.23. The system of claim 21 , wherein the target has a surface facing toward the structure.24. The system of claim 21 , wherein the structure is a damascene structure.25. The system of claim 21 , wherein the crystallized RRAM cell material is PrCaMnO(PCMO).26. The system of claim 21 , wherein the target is approximately 3 to 4 inches from the structure.27. The system of claim 21 , wherein the target is configured to form the crystallized RRAM cell material on the structure such that the crystallized RRAM cell material on the structure has a thickness of approximately 40 to 70 Angstroms.28. The system of claim 21 , wherein the crystallized RRAM cell material includes grain boundaries vertical to the ...

System, method and support for coating eyeglass lenses

An installation, a carrier, and a method for coating eyeglass lenses are proposed, wherein a carrier with eyeglass lenses held in a rotatable manner is conveyed in succession in different coating devices or coating lines, in order to coat in an alternating manner opposite sides of the eyeglass lenses and/or to apply different coatings. In particular, the carriers with the eyeglass lenses are conveyed from a coating device or coating line by means of an evacuated transfer chamber to another coating device or coating line.

SPUTTER DEPOSITION METHOD, SPUTTERING SYSTEM, MANUFACTURE OF PHOTOMASK BLANK, AND PHOTOMASK BLANK

A film is sputter deposited on a substrate by providing a vacuum chamber () with first and second targets () such that the sputter surfaces () of the first and second targets () may face the substrate () and be arranged parallel or oblique to each other, simultaneously supplying electric powers to the first and second targets (), and depositing sputtered particles on the substrate while controlling sputtering conditions such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering. 1. A method for sputter depositing a film on a substrate , comprising the steps of:providing a vacuum chamber with first and second targets such that the surfaces of the first and second targets to be sputtered may face a substrate to be coated and be arranged parallel or oblique to each other,simultaneously supplying electric powers to the first and second targets, anddepositing sputtered particles on the substrate while controlling sputtering conditions of the first and second targets such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering thereof.2. The method of wherein for either one or both of the first and second targets claim 1 , the resistivity of sputtered particles depositing on the sputter surface of the other target is higher than the resistivity of the other target claim 1 , or the sputtering rate of the material of which sputtered particles depositing on the sputter surface of the other target are composed is lower than the sputtering rate of the material of which the other target is composed.3. The method of wherein a barrier member for permanently separating the space defined between the sputter surfaces of ...

SPUTTERING DEVICE AND METHOD OF FORMING THIN FILM USING THE SAME

A sputtering device includes a plurality of sputtering targets provided in a process chamber, a substrate holder facing the plurality of sputtering targets and configured to support a substrate, and a deposition mask disposed between the plurality of sputtering targets and the substrate, the deposition mask covering an end portion of the substrate. At least one of the plurality of sputtering targets has an arc shape that is convex toward the substrate and a remainder of the plurality of sputtering targets are flat facing toward the substrate. 1. A sputtering device , comprising:a plurality of sputtering targets provided in a process chamber;a substrate holder facing the plurality of sputtering targets, and the substrate holder configured to support a substrate; anda deposition mask disposed between the plurality of sputtering targets and the substrate, the deposition mask covering an end portion of the substrate,wherein at least one of the plurality of sputtering targets has an arc shape that is convex toward the substrate, and a remainder of the plurality of sputtering targets are flat facing toward the substrate.2. The sputtering device of claim 1 , wherein two arc-shaped sputtering targets are disposed on opposite ends of the plurality of sputtering targets having flat shapes.3. The sputtering device of claim 1 , wherein each of the remainder of the plurality of sputtering targets has a rectangular bar shape in a plane facing toward the substrate.4. The sputtering device of claim 1 , further comprising a first magnet disposed under each of the remainder of the plurality of sputtering targets claim 1 ,wherein the first magnet is configured to retain plasma generated in the process chamber in an upper space of the process chamber that is above each of the remainder of the plurality of sputtering targets.5. The sputtering device of claim 4 , wherein the first magnet has a rectangular bar shape.6. The sputtering device of claim 5 , further comprising a second magnet ...

PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS

In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films. 1. A method of refurbishing an eroded sputtering target while minimizing material consumption , the eroded sputtering target (a) having a surface contour defining (i) an upper surface level , (ii) a first eroded region having a surface depth recessed below the upper surface level , and (iii) a second eroded region having a surface depth deeper than the surface depth of the first eroded region , and (b) comprising a target material , the method comprising:identifying one or more characteristics of the second eroded region;spray-depositing particles of the target material to at least partially fill the second eroded region; andduring spray deposition of particles of the target material, substantially preventing deposition of particles of the target material in the first eroded region, whereby the surface depth of the first eroded region remains recessed below the upper surface level thereafter.2. The method of claim 1 , wherein the one or more characteristics of the second eroded region comprise at least one of a difference between the surface depth of the second eroded region and the upper surface level claim 1 , a shape of the surface contour of the eroded sputtering target in the second eroded region claim 1 , or a difference between the surface depth of the second eroded region and the surface depth of the first eroded region.3. The method of claim 1 , wherein substantially preventing deposition of particles of the target material in the first eroded region comprises ...

METHODS OF MANUFACTURING LARGE-AREA SPUTTERING TARGETS USING INTERLOCKING JOINTS

In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding. 122.-. (canceled)23. A joined sputtering target comprising:first and second discrete sputtering-target tiles (A) each comprising a sputtering material, and (B) disposed in contact with each other in a contact region at an interface therebetween, wherein (i) the interface comprises a recess disposed over the contact region, and (ii) the first tile comprises a beveled edge defining at least a portion of the recess;a region of metal powder (i) disposed over and in contact with the interface in the contact region, (ii) at least partially filling the recess, and (iii) disposed in contact with the first and second tiles; anda backing plate attached to surfaces of the first and second tiles opposite the region of metal powder.24. The joined sputtering target of claim 23 , wherein the sputtering material comprises a mixture or alloy of at least two constituent materials.25. The joined sputtering target of claim 24 , wherein the at least two constituent materials comprise Mo and Ti.26. The joined sputtering target of claim 24 , wherein the metal powder comprises at least one of the constituent materials.27. The joined sputtering target of claim 23 , wherein the metal powder comprises the sputtering material.28. The joined sputtering target of claim 23 , wherein the metal powder consists essentially of the sputtering material.29. The joined sputtering target of claim 23 , wherein the first and second tiles each consists essentially of the sputtering material.30. The joined sputtering target of claim 29 , wherein the metal powder consists essentially of the sputtering material.31. The joined sputtering target of claim 23 , wherein the sputtering material comprises at least one of molybdenum claim 23 , titanium claim 23 , copper claim 23 , tungsten claim 23 , niobium claim 23 , or tantalum.32. The joined sputtering target of claim 23 , ...

LOW DEFLECTION SPUTTERING TARGET ASSEMBLY AND METHODS OF MAKING SAME

Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature. Matching CTE in both target material and backing plate eliminates the problem of CTE mismatch and prevents the assembly from deflection and internal stress. 1. A method of producing a sputtering target assembly , said method comprising the steps of:a. providing a backing plate composed of a laminated assembly comprising a first layer having a first coefficient of thermal expansion (CTE) and a second layer having a second CTE;b. providing a sputtering target, said target composed of a third material having third CTE;c. solder bonding said first layer of said backing plate to said target to provide said sputtering target assembly.2. The method of wherein the CTE of said first layer is lower than the CTE of the second layer.3. The method of wherein the CTE of the first layer is lower than the CTE of the second layer.4. The method of wherein the first layer and the second layer are joined together via diffusion bond claim 1 , blazing claim 1 , soldering claim 1 , FSW claim 1 , coating claim 1 , electroplating claim 1 , and other methods.5. The method as recited ...

TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE

A device for cooling a target, having a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to the cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, characterized in that between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to the one side of the additional thermally conductive plate that faces the cooling side. 1. A device for cooling a target , comprising:a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to a cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, wherein between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to a side of the additional thermally conductive plate that faces the cooling side.2. The device for cooling a target according to claim 1 , wherein on a side of the additional thermally conductive plate opposite the side that faces the cooling side of the component claim 1 , a second self-adhesive carbon film is provided claim 1 , which is glued to the additional thermally conductive plate in an extensive claim 1 , self-adhesive fashion.3. The device according to claim 1 , wherein the additional thermally conductive plate contains copper and/or molybdenum.4. The device according to claim 1 , wherein the additional thermally conductive plate is selected to be thick enough that it lends the self-adhesive carbon film(s) sufficient stability for a simple handling.5. The device according to claim 4 , wherein the additional thermally conductive plate is at least 3 millimeters thick.6. A target with a cooling device according to claim 1 ...

Apparatus for pvd dielectric deposition

Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

SPUTTERING TARGET, METHOD OF BONDING TARGET MATERIAL AND BACKING PLATE, AND METHOD OF MANUFACTURING SPUTTERING TARGET

A sputtering target comprising: 1. A sputtering target comprising:a backing plate; anda target material bonded via a bonding material to a bonding region of the backing plate, whereina bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and whereina maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.6% or less of the area of the bonding region, whereinthe bonding material is made of metal or alloys having a melting point of 723K or less.2. The sputtering target according to claim 1 , wherein the area of the bonding region is 13000 mmor more.3. The sputtering target according to claim 1 , when the target material is formed in an elongated plate shape claim 1 , wherein the length of the target material in a long-side direction is 1000 mm or more and 4000 mm or less.4. A method of bonding a target material and a backing plate with a bonding material claim 1 , comprising the steps of:applying the bonding material to a bonding region to be bonded to the target material on a principal surface of the backing plate;sliding and moving the target material in a first direction along the principal surface of the backing plate so that an edge of the target material is moved from a first edge side of the bonding region of the backing plate to a position beyond a second edge facing the first edge in the first direction in the bonding region of the backing plate; andsliding and moving the target material in a second direction opposite to the first direction along the principal surface of the backing plate to match the target material with the bonding region of the backing plate.5. The method of bonding according to claim 4 , whereinthe target material and the backing plate are formed in an elongated shape, whereinthe edge of the target material is formed along a longitudinal direction of the target material, ...

SPUTTERING SOURCE ARRANGEMENT, SPUTTERING SYSTEM AND METHOD OF MANUFACTURING METAL-COATED PLATE-SHAPED SUBSTRATES

For coating substrates (S) having along their surfaces to be coated high aspect ratio vias, a sputtering system has a sputtering source arrangement, which includes a first DC pulse operated magnetron sub-source () and a second frame-shaped magnetron sub-source () which latter is arranged, in the system, between the substrate (S) and the first magnetron sub-source (). The second magnetron sub-source () may be operated in DC, pulsed DC, thereby also HIPIMS mode. The first magnetron sub-source () is advantageously also operated in HIPIMS mode. The substrate (S) is biased by an Rf power source (). 1. A sputtering source arrangement comprisingA second magnetron sub-source with a close-frame shaped second target of said material and along the periphery of and electrically isolated from said first target, said second target having a second sputtering surface arranged around said geometric axis, a second magnet arrangement along and adjacent a back-surface of said second target, so as to establish a second magnetron magnetic field along said second sputtering surface.Around a geometric axis, a first magnetron sub-source with a first target of a material having a first sputtering surface defining a plane perpendicular to said geometric axis and comprising a first magnet arrangement adjacent a back surface of said first target, drivingly movable along said first sputtering surface so as to establish a moving close loop first magnetron magnetic field, movable along said first sputtering surface;2. The sputtering source arrangement of claim 1 , wherein said first target is at least one of plane and of circular.3. The sputtering source arrangement of claim 1 , wherein said second sputtering surface defines claim 1 , in a cross-sectional planes containing said geometric axis claim 1 , a pair of substantially straight lines.4. The sputtering source arrangement of claim 1 , wherein said second sputtering surface defines around said geometric axis claim 1 , a surface one of parallel ...

INSULATOR TARGET

There is provided an insulator target which, when mounted on a sputtering apparatus and supplied with AC power, is capable of preventing the discharging from occurring in a clearance between a shield and the target. The insulator target for the sputtering apparatus according to this invention, around which is disposed a shield at the time of assembling the insulator target on the sputtering apparatus, is made up of: a plate-shaped target material to be enclosed by the shield; and, suppose that one surface of the target material is defined as a sputtering surface to be subjected to sputtering, an annular supporting material coupled to an outer peripheral portion of the opposite surface of the target material. The supporting material has an extended portion which is extended outward from a peripheral surface of the target material and which keeps a predetermined clearance to the shield. 1. An insulator target adapted for use in a sputtering apparatus wherein , at a time of mounting the insulator target on the sputtering apparatus , a shield is disposed around a periphery of the insulator target , the insulator target comprising:a plate-shaped target material enclosed by the shield; andsuppose that one surface of the target material is defined as a sputtering surface to be subjected to sputtering, an annular supporting material coupled to an outer peripheral portion of an opposite surface of the target material, the supporting material having an extended portion which is extended outward from a peripheral surface of the target material and which keeps a predetermined clearance to the shield,wherein the supporting material is arranged to have an impedance equal to, or above, an impedance of the target material when the sputtering surface is subjected to sputtering by supplying AC power to the insulator target.2. The insulator target according to claim 1 , wherein the target material and the supporting material are made of a same material claim 1 , and wherein the ...

Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms. 1. A method of depositing a layer on a substrate , the method comprising:applying a magnetic field to a cathode target to generate an unbalanced magnetic field and a magnetron configuration on the cathode target;electrically coupling an additional electrode to a ground electrical potential using an electrical circuit comprising an inductor;electrically coupling the additional electrode to a radio frequency (RF) power supply;generating magnetic coupling between the cathode target and the anode;providing a feed gas; andapplying power to the cathode target, the RF power supply providing a power selected to increase ionization of sputtered target material atoms associated with the cathode target during sputtering.2. The method claim 1 , as defined by claim 1 , further comprising coupling a DC power supply to the cathode claim 1 , the DC power supply providing output power in a range of 1 to 100 kW.3. The method claim 1 , as defined by claim 1 , wherein the feed gas comprises a noble gas claim 1 , the noble gas comprising at least one of argon claim 1 , xenon claim 1 , neon claim 1 , and krypton.4. The method claim 1 , as defined by claim 1 , wherein the feed gas comprises a mixture of a noble gas and a reactive ...

FILM DEPOSITION DEVICE

A film deposition device is disclosed. The device includes a driver, a sputtering target assembly, and at least one rotatable magnetoelectric device located at the back of the sputtering target assembly. The rotatable magnetoelectric device includes a transmission having a conveyor belt, and at least one pair of gears which cooperate with the conveyor belt and are disposed at an inner side of the conveyor belt, where an axial direction of the gears is substantially parallel to a surface of the sputtering target assembly. The rotatable magnetoelectric device also includes a first set of magnets, where the first set of magnets are disposed outside of the conveyor belt. In addition, the driver is configured to cause the gears to rotate. 1. A film deposition device , comprising:a driver;a sputtering target assembly; and [ a conveyor belt, and', 'at least one pair of gears which cooperate with the conveyor belt and are disposed at an inner side of the conveyor belt, wherein an axial direction of the gears is substantially parallel to a surface of the sputtering target assembly, and, 'a transmission, comprising, 'a first set of magnets, wherein the first set of magnets are disposed outside of the conveyor belt,', 'wherein the driver is configured to cause the gears to rotate., 'at least one rotatable magnetoelectric device located at the back of the sputtering target assembly, wherein the rotatable magnetoelectric device comprises2. The film deposition device of claim 1 , further comprising at least one reciprocating transmission claim 1 , which is located at the back of the sputtering target assembly and is disposed in parallel with the rotatable magnetoelectric device claim 1 ,wherein a second set of magnets are disposed on the reciprocating transmission, and the reciprocating transmission is configured to cause the second set of magnets to move reciprocally in parallel to the axial direction.3. The film deposition device of claim 1 , wherein the first set of magnets ...

MAGNETRON-SPUTTERING COATING SYSTEM AND METHOD, AND DISPLAY SUBSTRATE

It is provided a magnetron-sputtering coating system including a sputtering chamber. The sputtering chamber therein includes: a set of target, formed by concatenating a plurality pieces of target; a substrate carrier, arranged to be opposite to the target set, and support a substrate to be coated with a film; and a driving device, arranged to drive the substrate carrier to reciprocate in a direction of the arrangement of the target. 1. A magnetron-sputtering coating system , comprising:a sputtering chamber, a target set consisting of a plurality of targets;', 'a substrate carrier, arranged opposite to the target set, and configured to support a substrate to be coated with a film; and', 'a driving device, configured to drive the substrate carrier to reciprocate in an arrangement direction of the targets., 'wherein in the sputtering chamber, the magnetron-sputtering coating system further comprises2. The magnetron-sputtering coating system according to claim 1 , further comprising:a chamber mask arranged to surround the substrate carrier which moves within the chamber mask.3. The magnetron-sputtering coating system according to claim 1 , further comprising:an edge mask arranged on both sides of the substrate carrier in the arrangement direction of the targets.4. The magnetron-sputtering coating system according to claim 1 , wherein the driving device comprises:rollers configured to drive the substrate carrier to move;a motor configured to drive the rollers to rotate; anda controller connected to the motor and configured to control a rotation rate of the rollers so as to control a movement speed of the substrate carrier.5. The magnetron-sputtering coating system according to claim 1 , further comprising:a plurality of position sensors arranged in the arrangement direction of the targets and configured to detect a position of the substrate carrier.6. The magnetron-sputtering coating system according to claim 5 , further comprising:a limiting position sensor arranged at ...

Semiconductor Device, Display Device, Display Module, Electronic Device, Oxide, and Manufacturing Method of Oxide

The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.

ELECTROCHROMIC DEVICES

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives. 1. (canceled)2. A method of fabricating an electrochromic device , the method comprising:(a) forming a cathodically coloring layer comprising a cathodically coloring electrochromic material;(b) forming an anodically coloring layer comprising an anodically coloring electrochromic material and one or more additives, wherein the cathodically coloring layer and the anodically coloring layer are in contact with one another to form a stack;(c) exposing the stack to lithium; and(d) heating the stack to form an ionically conducting and electrically insulating material at an interface between the cathodically coloring layer and the anodically coloring layer.3. The method of claim 2 , wherein (a) comprises forming a superstoichiometric oxygenated form of the cathodically coloring electrochromic material.4. The method of claim 2 , wherein the cathodically coloring electrochromic material comprises at least one metal oxide selected from the group consisting of: tungsten oxide claim 2 , molybdenum oxide claim 2 , niobium oxide claim 2 , titanium oxide claim 2 , vanadium oxide claim 2 , and combinations thereof.5. The method of claim 4 , ...

Ion Source Crucible For Solid Feed Materials

An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible. 1. An indirectly heated cathode ion source , comprising:an arc chamber, comprising a plurality of electrically conductive side walls connecting a first end and a second end;an indirectly heated cathode disposed on the first end of the arc chamber; anda crucible disposed on the second end of the arc chamber.2. The indirectly heated cathode ion source of claim 1 , further comprising an electrode disposed on one of the plurality of electrically conductive side walls; wherein a voltage is applied to the electrode relative to the voltage applied to the plurality of electrically conductive side walls of the arc chamber.3. The indirectly heated cathode ion source of claim 1 , further comprising a feed material disposed in the crucible claim 1 , wherein the arc chamber is oriented so that gravity retains the feed material in the crucible.4. The indirectly heated cathode ion source of claim 1 , wherein the crucible comprises a target holder having a recessed cavity into which a feed material is disposed.5. The indirectly heated cathode ion source of claim 1 , wherein the crucible comprises a heated crucible claim 1 , having a recessed cavity in which a feed material is disposed and heated.6. The indirectly heated cathode ion source of claim 5 , further comprising a cover having a small opening disposed on a top of the recessed cavity.7. The indirectly heated cathode ion source of ...

SPUTTERING APPARATUS INCLUDING GAS DISTRIBUTION SYSTEM

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight. 1. A method of using a magnetron sputtering apparatus that comprises a vacuum chamber having a controlled environment , the magnetron sputtering apparatus including a target comprising one or more sputterable materials , wherein the target includes a sputtering zone that is racetrack shaped and extends longitudinally along a longitudinal axis , the sputtering zone including two straightaway areas sandwiched between first and second turnaround areas , the magnetron sputtering apparatus further including a gas distribution system comprising a plurality of interfaces located along the longitudinal axis , wherein the plurality of interfaces comprises a plurality of first interfaces and a plurality of second interfaces , the first interfaces positioned at each of the first and second turnaround areas to supply a first gas mixture to both of the first and second turnaround areas , such that the first gas mixture controls sputtering rate at localized areas of both of the first and second turnaround areas , whereas the second interfaces are positioned at each ...

COOLING AND UTILIZATION OPTIMIZATION OF HEAT SENSITIVE BONDED METAL TARGETS

A sputtering source is described. The sputtering source includes a backing support having a target receiving surface and a further surface opposing the target receiving surface, and at least one magnet assembly provided adjacent the further surface, wherein the target receiving surface of the backing support has at least one recess, wherein the recess is provided opposite to the magnet assembly. 1. A sputtering source comprising:a backing support having a target receiving surface configured to face the target material and having and a further surface opposing the target receiving surface; andat least one magnet assembly provided adjacent the further surface, wherein the target receiving surface of the backing support has at least one recess, wherein the recess is provided opposite to the magnet assembly.2. The sputtering source of claim 1 , comprising a target material claim 1 , wherein a thickness of the target material at a region opposite to the recess of the backing support is higher than a thickness of the target material at a region away from the recess of the backing support.3. The sputtering source of claim 2 , wherein a difference between the thickness of the target material at a region opposite to the recess of the backing support and the thickness of the target material at a region away from the recess of the backing support is 1 mm or more.4. The sputtering source of claim 1 , wherein a width of the recess is at least 100% of a width of the magnet assembly.5. The sputtering source of claim 1 , wherein the recess has a first surface opposing a second surface claim 1 , wherein the first surface has an inclination of between 0° to 10° with respect to the second surface.6. The sputtering source of claim 2 , comprising attachment means to hold the target material at the backing support.7. The sputtering source of claim 6 , wherein the attachment means may be selected from the group consisting of: a clamp claim 6 , a screw claim 6 , a solder and any ...

TARGET AND PROCESS FOR PRODUCING A TARGET

A target includes a target plate and a stabilizing layer which is joined to the rear side of the target plate. The stabilizing layer was produced by high-kinetic-energy spraying of stabilizing material onto the target plate. A process for producing a target is also provided. 18-. (canceled)9. A target , comprising:a target plate having a rear side; anda stabilizing layer joined to said rear side of said target plate, said stabilizing layer having characteristics of having been applied to said target plate by high-kinetic-energy spraying of stabilizing material.10. The target according to claim 9 , wherein said target plate is made of a material selected from the group consisting of aluminum-based materials claim 9 , chromium-based materials claim 9 , titanium-based materials and ceramics.11. The target according to claim 9 , wherein said stabilizing layer is made of one or more materials selected from the group consisting of copper claim 9 , copper alloys including brass and bronzes claim 9 , aluminum claim 9 , aluminum alloys claim 9 , titanium claim 9 , titanium alloys and steel.12. The target according to claim 9 , wherein said stabilizing layer has a composition with a gradient.13. The target according to claim 9 , wherein a ratio of a thickness of said stabilizing layer to a thickness of said target plate is in a range of from 1/1 to 1/5.14. The target according to claim 9 , wherein a ratio of a thickness of said stabilizing layer to a thickness of said target plate is in a range of from 1/2 to 1/4.15. The target according to claim 9 , wherein said rear side of said target plate has at least one depression formed therein.16. A process for producing a target claim 9 , the process comprising the following steps:providing a target plate having a rear side; andspraying stabilizing material onto the target plate by using a high-kinetic-energy spraying process producing a stabilizing layer on the rear side of the target plate.17. The process according to claim 16 , ...

APPARATUS AND METHODS FOR DEPOSITING DURABLE OPTICAL COATINGS

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate. 1: Apparatus for depositing germanium and carbon onto one or more substrates , the apparatus comprising a vacuum chamber , at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber , the first magnetron sputtering device being configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium , thereby defining a germanium sputtering zone within the vacuum chamber , the second magnetron sputtering device being configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon , thereby defining a carbon sputtering zone within the vacuum chamber , and the at least one mount and the at least first and second magnetron sputtering devices being arranged such that , when each substrate is moved ...

SUBSTRATE PROCESSING DEVICE

A substrate processing apparatus includes a sputter chamber, two targets located in the sputter chamber to form thin films on two film formation surfaces of a substrate through sputtering, and a transport mechanism that transports the substrate along a transport passage located in the sputter chamber. One of the two targets is located at one side of the transport passage opposed to one of the two film formation surfaces of the substrate at a front side with respect to a direction in which the substrate is transported. Another one of the two targets is located at another side of the transport passage opposed to another one of the two film formation surfaces of the substrate at a rear side with respect to the direction in which the substrate is transported. 1. A substrate processing apparatus comprising:a sputter chamber;two targets located in the sputter chamber to form thin films on two film formation surfaces of a substrate through sputtering; anda transport mechanism that transports the substrate along a transport passage located in the sputter chamber, whereinone of the two targets is located at one side of the transport passage opposed to one of the two film formation surfaces of the substrate at a front side with respect to a direction in which the substrate is transported, andanother one of the two targets is located at another side of the transport passage opposed to another one of the two film formation surfaces of the substrate at a rear side with respect to the direction in which the substrate is transported.2. The substrate processing apparatus according to claim 1 , whereinthe sputter chamber is one of a first sputter chamber and a second sputter chamber that are arranged next to each other to be at the front side and the rear side with respect to the transport direction, andthe two targets located in the first sputter chamber and the two targets located in the second sputter chamber are located at different positions in the transport direction ...

Method for coating a substrate and coater

A method for coating a substrate by means of a cathode arrangement including at least two rotatable cathodes is disclosed. The method includes rotating at least one of the at least two rotatable cathodes in a first direction, and, at the same time, rotating at least one of the at least two rotatable cathodes in a second direction. The first direction is opposite to the second direction. Furthermore, a controller for controlling a coating process is disclosed. Furthermore, a coater for coating a substrate is disclosed. The coater includes a cathode arrangement with at least two rotatable cathodes and a controller as disclosed herein.

Sputter Device with Moving Target

A sputter device for depositing a layer on a substrate in a vacuum chamber and having a layer property in each point of the substrate surface. The sputter device comprises at least one end block adapted for holding a cylindrical target having a longitudinal axis in a first direction, and a first drive means for providing a rotational movement of the at least one cylindrical target around its longitudinal axis. The sputter device includes a second drive means for applying a translational movement to an end block in a second direction. The first and the second drive means are adapted for, during sputtering, being simultaneously operational in the vacuum chamber. The movement of the first drive means does not impact the uniformity of the layer sputtered on the substrate in the direction on the surface of the substrate corresponding to a perpendicular projection of the second direction onto the substrate. 119-. (canceled)20. A sputter device for depositing a layer on a substrate in a vacuum chamber , the sputter device comprising:at least one end block adapted for each holding a cylindrical target, the target having a longitudinal axis in a first direction,a first drive means for providing rotational movement of the at least one cylindrical target around its longitudinal axis,a second drive means for applying a translational movement to the at least one end block in a second direction, thereby keeping the target axis parallel during at least a significant portion of the movement trajectory along the second direction, andwherein the first and the second drive means are adapted for, during sputtering, being operational simultaneously in the vacuum chamber, and wherein the second drive means is adapted for allowing a linear translational movement.21. A sputter device according to claim 20 , for depositing a layer on a substrate having a length in a length direction and a width in a width direction claim 20 , wherein the first direction is positioned along the width ...

Backing Plate Obtained by Diffusion-Bonding Anticorrosive Metal and Mo or Mo Alloy, and Sputtering Target-Backing Plate Assembly Provided with Said Backing Plate

Provided is a backing plate obtaining by bonding an anticorrosive metal and Mo or a Mo alloy, wherein the backing plate comprises, on a surface of the Mo or Mo alloy backing plate to be cooled (cooling surface side), a layer having a thickness corresponding to 1/40 to ⅛ of a total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more types of metals selected from among Cu, Al and Ti, or an alloy thereof. Additionally provided is a sputtering target-backing plate assembly obtained by bonding the foregoing Mo or Mo alloy backing plate and a target formed from a low thermal expansion material. 1. A Mo or Mo alloy backing plate to be bonded to a target , wherein the Mo or Mo alloy backing plate comprises , on a surface of the Mo or Mo alloy backing plate to be cooled , a layer having a thickness corresponding to 1/40 to ⅛ of a total thickness of the backing plate and formed from an anticorrosive metal , the surface of the Mo or Mo alloy backing plate to be bonded with the anticorrosive metal has a level difference , and the level difference part has a curve of R1 to R3.2. The Mo or Mo alloy backing plate according to claim 1 , wherein the anticorrosive metal is one or more types of metals selected from among Cu claim 1 , Al and Ti claim 1 , or an alloy thereof.3. The Mo or Mo alloy backing plate according to claim 2 , wherein the level difference is 2 mm or more.4. (canceled)5. The Mo or Mo alloy backing plate according to claim 3 , wherein the Mo or Mo alloy backing plate is of a disk shape claim 3 , and a diameter thereof is 500 mm or more.6. The Mo or Mo alloy backing plate according to claim 5 , wherein a bonded surface of the Mo or Mo alloy backing plate and the anticorrosive metal at the diffusion bonded interface has grooves having a depth of 0.08 to 0.4 mm.7. The Mo alloy backing plate according to claim 6 , wherein the Mo alloy is an alloy containing Mo in an amount of 80 wt % or more.8. A sputtering target- ...

SPUTTERING TARGET HAVING RFID INFORMATION

A method for affixing an RFID tag to sputtering targets is disclosed. A cavity is formed on the back of the backing plate adjacent to the outer edge. Within the cavity, an RFID tag is secured with an encapsulant. The encapsulant is cured with the RFID tag capable of communicating with an associated reader through the encapsulant. 1. A method for affixing an RFID tag to a sputtering target having a backing plate , comprising:providing a cavity located adjacent an outer circumference of a bottom of the backing plate of the sputtering target;positioning the RFID tag centered within both X and Y dimensions of the cavity;applying an encapsulant to the cavity with the RFID tag positioned therein; andcuring the encapsulant to substantially encapsulate the RFID tag.2. The method of claim 1 , wherein applying the encapsulant further comprises depositing a predetermined amount of encapsulant into the cavity such that a top of the encapsulant is flush with the bottom of the backing plate.3. The method of claim 2 , wherein the encapsulant is selected from the group consisting of an epoxy claim 2 , a silicone claim 2 , an adhesive claim 2 , a glue claim 2 , or a resin.4. The method of claim 3 , wherein the epoxy is an ultraviolet curable epoxy or an ultraviolet curable silicone claim 3 , and wherein curing the epoxy further comprises exposing the epoxy to an ultraviolet light source.5. The method of claim 2 , wherein the RFID tag is positioned within the cavity having an air gap in an X direction in the range of 2 to 3 mm claim 2 , and an air gap in a Y direction in the range of 2 to 3 mm.6. A sputtering target having an RFID tag affixed in accordance with the method of .7. A sputtering target claim 1 , comprising:a backing plate including a cavity;an RFID tag positioned within the cavity; andan encapsulant substantially encapsulating the RFID tag within the cavity.8. The sputtering target of claim 7 , wherein the encapsulant is selected from the group consisting of an epoxy ...

Physical Vapor Deposition Processing Systems Target Cooling

Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and an outlet end. 1. A physical vapor deposition target assembly comprising:a source material;a backing plate having a front side and a back side, the backing plate configured to support the source material on a front side of the backing plate; anda cooling tube including an inlet end configured to be connected to cooling fluid, an outlet end fluidly coupled to the inlet end, and a plurality of bends between the inlet end and the outlet end, the cooling tube configured to be placed adjacent the back side of the of the backing plate to cool the backing plate and the source material during a physical vapor deposition process.2. The physical vapor deposition target assembly of claim 1 , wherein the cooling tube is separate from the backing plate and the cooling tube provides a closed cooling loop containing the cooling fluid.3. The physical vapor deposition target assembly of claim 1 , the plurality of bends defining a flow pattern including a plurality of rows and the backing plate further comprising a channel in the back side configured to receive the cooling tube.4. The physical vapor deposition target assembly of claim 3 , the flow pattern comprising at least six rows and five bends.5. The physical vapor deposition target assembly of claim 3 , the flow pattern comprising at least eight rows and six bends.6. The physical vapor deposition target assembly of claim 2 , the flow pattern comprising a first pair of rows and a second pair of rows claim 2 , the inlet end fluidly connected to a single row fluidly connected to the first pair of rows and second pair of rows by a split connection claim 2 , and the outlet end fluidly connected to the first pair of rows and second pair of rows.7. The physical vapor deposition target ...

ROTATABLE SPUTTERING TARGET

A rotatable sputtering target has a target material, a back tube and a joint piece. The joint piece is disposed between the target material and the back tube. The joint piece has a compressible structure and an electrically and thermally conductive adhesive. Particularly, the compressible structure being a compressible blanket or a compressible sheet has multiple through holes and thus the electrically and thermally conductive adhesive is filled in the through holes and then directly formed between the target material and the back tube. Using the joint piece to joint the target material and the back tube not only maintains the joint strength but also elevates the tolerable power of the rotatable sputtering target, which can increase the sputtering efficiency. 1. A rotatable sputtering target comprising:a target material;a back tube;a joint piece disposed between the target material and the back tube;the joint piece comprising a compressible structure and an electrically and thermally conductive adhesive;the compressible structure being a compressible blanket or a compressible sheet and having multiple through holes, and the electrically and thermally conductive adhesive formed between the target material and the back tube and filled in the through holes.2. The rotatable sputtering target as claimed in claim 1 , wherein the joint piece is composed of the compressible structure adsorbed with the electrically and thermally conductive adhesive claim 1 , and the electrically and thermally conductive adhesive is filled into the through holes and formed between the target material and the back tube.3. The rotatable sputtering target as claimed in claim 1 , wherein the compressible structure is a graphite blanket claim 1 , a graphite sheet claim 1 , a carbon blanket claim 1 , a carbon sheet or any combination thereof.4. The rotatable sputtering target as claimed in claim 1 , wherein the thermal conductivity of the joint piece is more than 20 W/m.5. The rotatable sputtering ...

FILM FORMING UNIT FOR SPUTTERING APPARATUS

In a film forming unit (FU) for a sputtering apparatus according to this invention, a supporting plate is provided with: a target having bonded thereto a backing plate; a magnet unit; and driving device for reciprocating the target along the supporting plate relative to the magnet unit. The backing plate is provided, in a protruded manner, with a supply pipe and a discharge pipe in communication with a coolant passage for the backing plate. A slit hole, which is elongated in the reciprocating direction of the target and through which the supply pipe and the discharge pipe penetrate, is formed in the supporting plate. The supporting plate has on its lower surface a cap body which hermetically encloses those portions of the supply pipe and the discharge pipe, inclusive of the slit hole, which are protruded downward from the slit hole. 1. A film forming unit for a sputtering apparatus comprising:a supporting plate detachably disposed on an opening in a vacuum chamber, provided that one-side surface of the supporting plate is defined as an upper side, the supporting plate having on the upper side thereof;a target with a backing plate bonded to a lower surface of the target;a magnet unit fixedly disposed between the backing plate and the supporting plate so as to cause leakage magnetic field to function on the target; anddriving means for reciprocating the target relative to the magnet unit along the supporting plate while electric power is applied from a sputtering power source to the target, thereby sputtering the target, wherein:the backing plate has disposed therein, in a protruding manner, a supply pipe and a discharge pipe for coolant, both being in communication with coolant passages formed inside the backing plate;the supporting plate has opened therein a slit hole which is elongated in the direction of reciprocating movement of the target and through which the supply pipe and the discharge pipe, both for coolant, are respectively inserted;the supporting plate ...

Density modulated thin film electrodes, methods of making same, and applications of same

Density modulated thin film electrodes, methods of making the same, and applications of the same. The density modulated thin film electrode includes a substrate formed of a current collecting material, and a thin film formed of an electrode material on the substrate. The thin film has a first surface and an opposite, second surface, and a density that is changed with a distance defined from the first surface to a plane in the thin film, the plane being parallel to the first surface. The method includes depositing the electrode material on the substrate to form the thin film, where, during deposition of the electrode material, a pressure of an operating gas is controlled and changed to a predetermined pressure value according to a deposited thickness of the electrode material, so as to make the density of the thin film changed with the distance.

OPTIMIZED TEXTURED SURFACES AND METHODS OF OPTIMIZING

Methods for treating texturized surfaces of sputter targets in order to improve adhesion and retention of deposited particles thereon. The target surfaces may first be texturized by a precursor texturizing method such as bead blasting, grit blasting, plasma spraying, or a twin-wire-arc spraying (TWAS) method. The thus textured surface is then sprayed or blasted with ice particles to form an optimized textured surface. The ice particles may comprise sublimable particles such as frozen carbon dioxide or dry ice. Also, argon may be used as exemplary ice particles. 1. A method of optimizing a textured surface , said method comprising blasting said textured surface with ice particles to form an optimized textured surface.2. The method of claim 1 , wherein said ice particles are sublimable carbon dioxide or argon particles.3. The method of claim 1 , wherein said textured surface was texturized using at least one method selected from the group consisting of bead blasting claim 1 , grit blasting claim 1 , plasma spraying claim 1 , twin-wire-arc spraying (TWAS) claim 1 , and combinations thereof.4. The method of claim 1 , wherein said textured surface is blasted with ice particles using a particle blasting device.5. The method of claim 4 , wherein said ice particles are entrained in a carrier gas.6. The method of claim 5 , wherein said carrier gas is nitrogen or air.7. The method of claim 1 , wherein said method comprises reducing the amount of any cantilevered structures present in said textured surface.8. An optimized textured surface optimized using a method comprising blasting a textured surface with ice particles to form said optimized textured surface.9. The optimized textured surface of claim 8 , wherein said textured surface was texturized using at least one method selected from the group consisting of bead blasting claim 8 , grit blasting claim 8 , plasma spraying claim 8 , twin-wire-arc spraying (TWAS) claim 8 , and combinations thereof.10. The optimized textured ...

MAGNETRON SPUTTERING COATING DEVICE, A NANO-MULTILAYER FILM, AND THE PREPARATION METHOD THEREOF

A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on the rotating stand, a first rotation system for driving the rotating stand to rotate around a central axis of the rotating stand, and a baffle fixed on the rotating stand. The sputtering cathodes are arranged around and perpendicular to the rotating stand. 1. A magnetron sputtering coating device , comprising:a deposition chamber;a rotating stand positioned within the deposition chamber and having a rotating axis;two first sputtering cathodes and a second sputtering cathode located on a circumference concentric with the rotating axis, wherein the second sputtering cathode contains a material different from the two first sputtering cathodes; anda baffle fixed on the rotating stand and divides the deposition chamber into at least two areas, wherein at least one first sputtering cathode is in one area, and the second sputtering cathode is in another area.2. The magnetron sputtering coating device according to claim 1 , wherein the first sputtering cathodes each include a graphite target claim 1 , and the second sputtering cathode includes a titanium or tantalum target.3. The magnetron sputtering coating device according to claim 1 , wherein the baffle extends along a diameter of the rotating stand.4. The magnetron sputtering coating device according to claim 1 , wherein the two first sputtering cathodes form an arc of substantially 180°-240° therebetween claim 1 , and the second sputtering cathode is positioned substantially in the middle of the two first sputtering cathodes.5. The magnetron sputtering coating device according to claim 1 , wherein the baffle is made of titanium claim 1 , aluminum claim 1 , stainless steel claim 1 , or a combination thereof.6. The magnetron sputtering coating device according to claim 1 , further comprising a support platform on the rotating stand for supporting an article to be ...

SPUTTER TARGET AND SPUTTERING METHODS

The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described. 2. The sputter target assembly of claim 1 , wherein the backing support is a backing plate and wherein each of said two or more sputter target sections:i) is affixed to the backing plate; andii) has a substantially planar sputter surface that is substantially co-planar with the other section or sections of said two or more sputter target sections.3. (canceled)4. (canceled)5. The sputter target assembly of claim 1 , wherein the backing support is a backing tube claim 1 , and wherein the two or more sputter target sections are each cylindrical sleeve segments that claim 1 , when assembled claim 1 , form a cylindrical target assembly.6. The sputter target assembly of claim 5 , wherein the two or more sputter target sections are configured such that they do not physically touch each other claim 5 , but have overlapping edge regions that prevent said line of sight.7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)13. The method of claim 12 , wherein the sputter target assembly further comprises a backing support claim 12 , the two or more sputter target sections assembled on said backing support claim 12 , and wherein said two or more sputter target sections are configured so that there is no line of sight to the backing support between any of said two or more sputter target sections claim 12 , in a direction orthogonal to a surface of the backing support and/or a sputter surface of said two or more sputter target sections.14. The method of claim 13 , wherein the backing support is a backing plate claim 13 , and wherein each of said two or more sputter target sections:i) is affixed to the backing plate; andii) has a substantially planar sputter surface that is substantially co-planar with the ...