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SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20190006419A1
Опубликовано: 03-01-2019
Автор(ы): ARAI Fumitaka, Kiyotoshi Masahiro, Ozawa Yoshio, Shirota Riichiro, Yamamoto Akihito
Принадлежит: Toshiba Memory Corporation
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