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Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same

Номер патента: US20070032002A1
Опубликовано: 08-02-2007
Автор(ы): Hideki Hashimoto, Hiroaki Iwakuro, Ken-ichi Nonaka, Koichi Nishikawa, Masaaki Shimizu, Seiichi Yokoyama, Yusuke Fukuda
Принадлежит: Honda Motor Co Ltd, Shindengen Electric Manufacturing Co Ltd
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Improvements in and relating to flat grids for cathode ray tubes and method and apparatus for manufacturing thesame

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Method for manufacturing optically anisotropic element, optically anisotropic element and liquid crystal display device using the optically anisotropic element

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Method for the preservation of materials containing animal or vegetable matter and compositions and devices useful therefor

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Method for the electric,mechanical and chemical protection of the surface ofthe semiconductor devices

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Spherical powder of niobium-aluminum metallic material and its manufactured body, and method and apparatus for manufacturing the spherical powder

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