Method for manufacturing a semiconductor component, in particular a laser with buried edge, and component manufactured by this method.
Номер патента: FR2701165B1
Опубликовано: 31-03-1995
Автор(ы): Dominique Bonnevie, Leon Goldstein
Принадлежит: Alcatel NV
Опубликовано: 31-03-1995
Автор(ы): Dominique Bonnevie, Leon Goldstein
Принадлежит: Alcatel NV
Method for the epitaxial manufacture of a semiconductor device having a multi-layer structure
Номер патента: US4274890A. Автор: Jacques J. Varon. Владелец: US Philips Corp. Дата публикации: 1981-06-23.