Semiconductor device with predetermined test mode - applies potential at pre-specified internal node to external contact in test mode in response to control signals
Номер патента: DE4336884A1
Опубликовано: 05-05-1994
Автор(ы): Katsuhiro Suma, Masaki Tsukude, Yukinobu Adachi
Принадлежит: Mitsubishi Electric Corp
Опубликовано: 05-05-1994
Автор(ы): Katsuhiro Suma, Masaki Tsukude, Yukinobu Adachi
Принадлежит: Mitsubishi Electric Corp
Реферат: The semiconductor device applies a potential (IVcc) at a pre-set internal node to an external contact (PD) in a predetermined mode. A first indicating signal device (11) reacts to a first control signal (IRAS, ICAS, IWE, Ai) to output a signal (SIGE) which indicates the predetermined mode. A second indicating signal device (12) reacts to a second control signal and to the first indicating signal to output a second signal (IVE) which indicates the output of the potential of the predetermined internal node. An output device outputs this potential at the external contact in response to the second indicating signal. USE/ADVANTAGE - For testable chips such as MOS DRAM. Voltages on internal supply and signal lines can be monitored and, in particular, input of voltage higher than normal input voltage can be accurately detected.
Semiconductor device with self refresh test mode
Номер патента: US20050249012A1. Автор: Terry Lee. Владелец: Lee Terry R. Дата публикации: 2005-11-10.