Substrate for a light emitting diode is made of sapphire has a first gallium nitride layer on the upper surface and side of the substrate and a second gallium nitride layer on the base surface and/or lower side of the substrate
Номер патента: DE19945008A1
Опубликовано: 22-03-2001
Автор(ы): Feng-Ju Chuang
Принадлежит: Opto Tech Corp
Опубликовано: 22-03-2001
Автор(ы): Feng-Ju Chuang
Принадлежит: Opto Tech Corp
Реферат: Substrate is made of sapphire and has a first gallium nitride layer on the upper surface and side of the substrate and a second gallium nitride layer on the base surface and/or lower side of the substrate. The pressures exerted by the first gallium nitride layer and the second gallium nitride layer are similar and have the same direction. Preferred Features: The gallium nitride layers have the same thicknesses. The thickness of the substrate is up to 150 mu m
Light emitting diode
Номер патента: US20230197895A1. Автор: Zhihua Zhang,Chia-Hao Chang,Cheng-Hung Lee,Zhibo XU,Chan-chan LIN,Mingbin MA. Владелец: Anhui Sanan Optoelectronics Co Ltd. Дата публикации: 2023-06-22.