Current limiter used in an electrical circuit comprises a silicon substrate, an n-conducting layer, n+ layers formed on opposite surfaces of the n- conducting layer, and electrodes formed on opposite surfaces of the substrate
Номер патента: DE10109172A1
Опубликовано: 03-01-2002
Автор(ы): Katsumi Satoh, Noritoshi Hirano, Takeaki Asaeda, Yoshihiro Yamaguchi
Принадлежит: Mitsubishi Electric Corp
Опубликовано: 03-01-2002
Автор(ы): Katsumi Satoh, Noritoshi Hirano, Takeaki Asaeda, Yoshihiro Yamaguchi
Принадлежит: Mitsubishi Electric Corp
Реферат: Current limiter comprises a silicon substrate (2), an n-conducting layer (4), two n<+> layers (5) formed on opposite surfaces of the n<-> conducting layer, and two electrodes (3) formed on opposite surfaces of the substrate. A voltage is applied to the substrate and a constant current flows in the current limiter when the voltage is higher than the predetermined value. Preferred Features: A number of p layers are partially formed in each of the n<+> layers. The current limiter can be adjusted up to 500K.
Current limiting diode
Номер патента: US20230140274A1. Автор: Mark Sweet,David R Trainer. Владелец: Rolls Royce PLC. Дата публикации: 2023-05-04.