Semiconductor device and method for fabricating the same.

Semiconductor device and method for fabricating the same

Номер патента: US20220216197A1
Опубликовано: 07-07-2022
Автор(ы): Sang Yun Nam
Принадлежит: SK hynix Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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