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Integrated circuit, semiconductor device and method of fabricating the same

Номер патента: US20240096712A1
Опубликовано: 21-03-2024
Автор(ы): Chieh-Fang Chen, Chung-Te Lin, Feng-Cheng Yang, Pin-Cheng HSU, Yen-Chung Ho, Yu-Wei Jiang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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