Ion beam measurement systems and methods for ion implant dose and uniformity control
Номер патента: EP1779404A2
Опубликовано: 02-05-2007
Автор(ы): Joseph Ferrara, Klaus Becker, Klaus Petry
Принадлежит: Axcelis Technologies Inc
Опубликовано: 02-05-2007
Автор(ы): Joseph Ferrara, Klaus Becker, Klaus Petry
Принадлежит: Axcelis Technologies Inc
Реферат: Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
Method for checking ion implantation state, and method for manufacturing semiconductor wafer
Номер патента: EP2565909A1. Автор: Isao Yokokawa. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2013-03-06.