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Semiconductor element, method for manufacturing the same, and semiconductor device

Номер патента: US20150228642A1
Опубликовано: 13-08-2015
Автор(ы): Kazuto Takao, Takashi Shinohe, Tatsuo Shimizu
Принадлежит: Toshiba Corp
Получить PDF файл: Открыть в новом окне

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