LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS
Номер патента: EP2852699A1
Опубликовано: 01-04-2015
Автор(ы): Andrew E. Souzis, Avinash K. Gupta, Gary E. Ruland, Ilya Zwieback, Ping Wu, Thomas E. Anderson, Varatharajan Rengarajan, Xueping Xu
Принадлежит: II VI Inc
Опубликовано: 01-04-2015
Автор(ы): Andrew E. Souzis, Avinash K. Gupta, Gary E. Ruland, Ilya Zwieback, Ping Wu, Thomas E. Anderson, Varatharajan Rengarajan, Xueping Xu
Принадлежит: II VI Inc
Реферат: A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.
Shield member and apparatus for growing single crystal equipped with the same
Номер патента: US20120318198A1. Автор: Akihiro Matsuse. Владелец: Showa Denko KK. Дата публикации: 2012-12-20.