Low offset and high sensitivity vertical hall effect sensor
Номер патента: EP3042214A1
Опубликовано: 13-07-2016
Автор(ы): Chinwuba Ezekwe, Johan Vanderhaegen, Xinyu Xing
Принадлежит: ROBERT BOSCH GMBH
Опубликовано: 13-07-2016
Автор(ы): Chinwuba Ezekwe, Johan Vanderhaegen, Xinyu Xing
Принадлежит: ROBERT BOSCH GMBH
Реферат: A vertical Hall Effect sensor is provided having a high degree of symmetry between its bias modes, can be adapted to exhibit a small pre-spinning systematic offset, and complies with the minimal spacing requirements allowed by the manufacturing technology (e.g., CMOS) between the inner contacts. These characteristics enable the vertical Hall Effect sensor to have optimal performance with regard to offset and sensitivity.
An electronic circuit having vertical hall elements arranged on a substrate to reduce an orthogonality error
Номер патента: WO2022225623A1. Автор: Hernan D. Romero,Gerardo A. Monreal. Владелец: Allegro Microsystems, LLC. Дата публикации: 2022-10-27.