Method and apparatus for generating and confining a reactive gas for etching substrates
Номер патента: WO2000042632B1
Опубликовано: 19-10-2000
Автор(ы): Edward J Gratrix, Michael D Robbins, William G America
Принадлежит: Ipec Precision Inc
Опубликовано: 19-10-2000
Автор(ы): Edward J Gratrix, Michael D Robbins, William G America
Принадлежит: Ipec Precision Inc
Реферат: A method for performing localized etching reactions on a substrate by confining a reactive gas with a non-reactive gas curtain is described. In the method, a reactive gas capable of etching the etchable substrate is generated. The reactive gas is applied to the etchable substrate. A non-reactive gas is flowed towards the substrate in the form of a non-reactive gas curtain around the reactive gas so as to substantially confine the reactive gas to a predetermined etching region on the substrate. An apparatus for carrying out the above described method is also disclosed.
Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
Номер патента: SG173883A1. Автор: XING Chen,Jesse E Ambrosina,Ali Shajii,Souheil Benzerrouk,Andrew Cowe,Ken Tran,Siddharth P Nagarkatti. Владелец: Mks Instr Inc. Дата публикации: 2011-09-29.