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Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

Номер патента: US20240063123A1
Опубликовано: 22-02-2024
Автор(ы): Byounghak Hong, Gil Hwan Son, Hoonseok Seo, KANG Ill Seo, Saehan Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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Field emission electrode, method of manufacturing the same, and field emission device comprising the same

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SYSTEM AND METHOD FOR VOICEMAIL TO TEXT CONVERSION

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Combinational Compositions And Methods For Treatment Of Cancer

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METHODS OF TREATING DEGENERATIVE BONE CONDITIONS

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Ear Implant Electrode and Method of Manufacture

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Method of manufacturing printed circuit board having flow preventing dam

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Alternative Pallet Rail, Pallet Assembly, and Method for Making Same

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MULTI-CHIP PACKAGE WITH THERMAL FRAME AND METHOD OF ASSEMBLING

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RAY TRACING SYSTEM ARCHITECTURES AND METHODS

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SYSTEM AND METHOD FOR CREATING, MANAGING, SHARING AND DISPLAYING PERSONALIZED FONTS ON A CLIENT-SERVER ARCHITECTURE

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SYSTEM AND METHOD OF ILLUMINATING INTERFEROMETRIC MODULATORS USING BACKLIGHTING

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Methods Of Enhancing Antibody-Dependent Cellular Cytotoxicity

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SYNERGISTIC COMBINATION AND METHOD THEREOF

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REINFORCEMENT FOR ASPHALTIC PAVING, METHOD OF PAVING, AND PROCESS FOR MAKING A GRID WITH THE COATING FOR ASPHALTIC PAVING

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