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Fin Field Effect Transistor (FINFET) Device and Method for Forming the Same

Номер патента: US20170250286A1
Опубликовано: 31-08-2017
Автор(ы): Chang-Yin Chen, Che-Cheng Chang, Tung-Wen CHENG, Yung-Jung Chang, Zhe-Hao Zhang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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