Method and apparatus for reducing temperature variations across a semiconductor wafer during heating
Номер патента: DE3567678D1
Опубликовано: 23-02-1989
Автор(ы): Herbert Lord
Принадлежит: American Telephone and Telegraph Co Inc
Опубликовано: 23-02-1989
Автор(ы): Herbert Lord
Принадлежит: American Telephone and Telegraph Co Inc
SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate
Номер патента: US11972949B2. Автор: Tadaaki Kaneko,Natsuki Yoshida,Kazufumi AOKI. Владелец: Toyota Tsusho Corp. Дата публикации: 2024-04-30.