Molded power semiconductor module and method for fabricating the same.

Molded power semiconductor module and method for fabricating the same

Номер патента: US20240047289A1
Опубликовано: 08-02-2024
Автор(ы): Egbert Lamminger, Ludwig Busch, Marco Bäßler, Patrik Holt Jones
Принадлежит: INFINEON TECHNOLOGIES AG
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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