Slurry composition and method of chemical mechanical polishing using same
Опубликовано: 11-07-2002
Автор(ы): Jean Claude Drouget, Lionel Bonneau, Maria Louise Peterson, Robert James Small, Tuan Troung
Принадлежит: Baikowski Chimie, EKC Technology Inc, Jean Claude Drouget, Lionel Bonneau, Maria Louise Peterson, Robert James Small, Tuan Troung
Реферат: The present invention provides a slurry composition for chemical mechanical polishing comprising spinel particles having the formula: AO•xZ2O3 wherein A is at least one divalent cation, Z is at least one trivalent cation, and 0.01 ≤ x ≤ 100. The present invention also includes a method of chemical mechanical polishing the surface of a substrate using slurry compositions that include these spinel particles. The slurry compositions of the present invention provide the desired level of planarization and selectivity for both metal and oxide surfaces. In addition, the slurry compositions of the invention can be prepared such that they are substantially free of alpha phase alumina particles and other high hardness particles to produce a scratch-free polished surface.
Cerium oxide particles, chemical mechanical polishing slurry composition comprising same, and method for manufacturing semiconductor device
Номер патента: US20230348753A1. Автор: Jeong Ho Lee,Seok Joo Kim. Владелец: Soulbrain Co Ltd. Дата публикации: 2023-11-02.