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Semiconductor device having doped seed layer and method of manufacturing the same

Номер патента: US20240021719A1
Опубликовано: 18-01-2024
Автор(ы): Chi-Ming Chen, Chia-Shiung Tsai, Chung-Yi Yu, Po-Chun Liu, Ru-Liang Lee
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Carbon dioxide gas adsorbent including chabazite zeolite, methods for preparing the same, and methods of separating carbon dioxide using the same

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Sodium pump antibody agonists and methods of treating heart disease using the same

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Resist composition and method of forming pattern by using the same

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Resist composition and method of forming pattern by using the same

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Programmable dancing figurine and method of conducting a performance using the same

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Environmentally-clean water-based fire inhibiting and extinguishing compositions, and methods of and apparatus for applying the same

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Antiretroviral cyclonucleoside compositions and methods and articles of manufacture therewith

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Variant dihydrodipicolinate reductase polypeptide and method of producing l-threonine using the same

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Touch screen display user interface and method for improving touch interface utility on the same employing a rules-based masking system

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