System and method for reliable sensing of memory cells.

System and method for reliable sensing of memory cells

Номер патента: US11763891B2
Опубликовано: 19-09-2023
Автор(ы): Jaw-Juinn Horng, Szu-chun TSAO
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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