Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon
Номер патента: EP2835632A4
Опубликовано: 16-03-2016
Автор(ы): Junichi Okada, Shigeyoshi Netsu, Shuichi Miyao
Принадлежит: Shin Etsu Chemical Co Ltd
Опубликовано: 16-03-2016
Автор(ы): Junichi Okada, Shigeyoshi Netsu, Shuichi Miyao
Принадлежит: Shin Etsu Chemical Co Ltd
Surface temperature calculation method and control method for polycrystalline silicon rod, method for production of polycrystalline silicon rod, polycrystalline silicon rod, and polycrystalline silicon ingot
Номер патента: US20170113937A1. Автор: Shigeyoshi Netsu,Shuichi Miyao. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-04-27.