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Epitaxial structure of semiconductor device and manufacturing method thereof

Номер патента: US09748386B2
Опубликовано: 29-08-2017
Автор(ы): Chun-Jen Chen, I-Cheng Hu, Neng-Hui Yang, Tien-I Wu, Yu-Shu Lin
Принадлежит: United Microelectronics Corp
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