Switchable power solid state device, e.g. gate turn-off thyristor
Номер патента: DE4435079C1
Опубликовано: 18-01-1996
Автор(ы): Hans-Joachim Dr Schulze
Принадлежит: SIEMENS AG
Опубликовано: 18-01-1996
Автор(ы): Hans-Joachim Dr Schulze
Принадлежит: SIEMENS AG
Реферат: The device includes a semiconductor body with two emitter zones (3,4) of opposite conductivity, base (2) and inner (1) zones. The inner zone is of one conducting type and the base zone of the other. On the base zone is formed the emitter zone (3) of the same conductivity as the inner zone but highly implanted. The other emitter zone (4) is formed on the other side of the second conductor material type and is provided with short circuit zones (5). The first emitter zones have electrodes that are switched in parallel. The second emitter zones are coupled to a common electrode (8). Control electrodes are formed on the base electrode. The second emitter is p-doped and implanted with addition material, e.g. caesium, barium, gold, etc. that prevents overheating.
Gate turn-off thyristor of multi-emitter type
Номер патента: US5051806A. Автор: Shuroku Sakurada,Shuji Musha,Tadashi Sakaue,Toshihide Ujihara. Владелец: HITACHI LTD. Дата публикации: 1991-09-24.