Reduced volume treatment chamber
Embodiments of the present disclosure generally relate to (supercritical drying apparatus) a supercritical drying. device, and more specifically, the embodiments described herein relate to a reduced. volume of (reduced volume processing chamber) treatment chamber (I). It is often desirable, to remove liquid and solid contaminants from the surfaces of the two substrates. in the cleaning of semiconductor devices, and it is often desirable to. remove the cleaning liquid, from the surface of the substrate in, a three cleaning. chamber after wet cleaning of the substrates, generally involving the use of cleaning liquids, e.g. aqueous cleaning solutions. Most current wet cleaning techniques are particularly evident on substrates having high aspect (immersion) ratio features. or low-level, features (voids), which (pores) are particularly evident on. substrates having high -k, aspect ratio features or high aspect ratio semiconductor device structures following the application of a liquid ejection or immersion photolithography step (stiction) to clean a substrate, which may damage a substrate having high aspect ratio semiconductor, device structures, as opposed. to leaving residues from the cleaning solution used. (line stiction) (line collapse), (). Due to the capillary pressure across the liquid two, air interface, the features having a high aspect ratio. trench or via are particularly sensitive to the difference in surface tension created between - the liquid - two air and the liquid two wall interfaces due. to capillary pressure, also, referred to as capillary force, which faces challenges sharply increasing in preventing line. stiction. As a result, there is, a (supercritical drying processes) need in the art for an improved apparatus for carrying out supercritical drying. processes. In one embodiment, the apparatus may. include a processing chamber body, and the processing chamber body may, include a processing chamber body, and the. second processing 1 chamber body may be configured, to be slidably coupled to the first track . and the 2 second substrate may be slidably, coupled to the first track, and. the second substrate may be configured to move relative to the chamber body, and the second substrate may be configured to move independently to the door. In another embodiment, the substrate support. may include a chamber body having an opening, formed therein and the one baffle plate may be configured to translate. between an open position and a closed position, and the second substrate support may be configured to translate between an. open position 1 and a closed position, and the second substrate support may be (translate) configured to translate between. an open position 2 and a closed position, and the second substrate support may 1 be configured to translate between 2 an open position and a closed. position. In another embodiment, the method may include. placing the substrate support in an open orientation with; respect to the chamber body, and placing the substrate support. in an open orientation relative to the, chamber body, and the second substrate support may be slid. into the chamber body, and the second, substrate support may be slid into contact. with the chamber body, and sliding between the. sliding of the substrate support and the door may be performed independently. Top It should be noted that the more detailed description, of the present disclosure briefly summarized above to allow the features of, the present disclosure to be described in. detail, to be understood in detail, but some of which are shown in, the accompanying drawings, and some of which are not. to be considered limiting of its scope and may admit to other embodiments of equivalent effects, as illustrated in the accompanying drawings. The present 1 disclosure also illustrates the effect of stiction created between features formed on a semiconductor substrate according to embodiments described herein. Also shown 2a is a plan view of a processing device according to one embodiment described herein. Also shown 2b is a plan view of a processing device according to one embodiment described herein. A schematically illustrates. a cross-3 sectional view of a reduced volume treatment chamber in accordance with one embodiment described herein. The perspective view of 4 a processing chamber of reduced volume, according to one embodiment described herein, is depicted. It is contemplated that elements, and features, of one embodiment may be beneficially incorporated in other embodiments. without further recitation in order to facilitate understanding that the same reference numerals have been used to indicate identical elements that are common. to the two figures in order to facilitate understanding. In the following description, numerous specific details are set forth, in order to provide a thorough. understanding, of embodiments provided herein; however, those skilled in the art will appreciate that no specific . details are, set forth in order to provide a thorough understanding of embodiments. provided herein. It is 1 generally undesirable because (100), as shown, line, stiction is caused (100) by 2 the contact between the walls of the adjacent device structures and between the two features in the. adjacent device, structures, (102) whereas the two-line, stiction (106) results from (104) the contact between the (102) walls of the (106) adjacent device structures and. between the (100) adjacent ones of the two-dimensional (102) device, structures, (102) e.g. (106) between two (104) of the two features of the first - and second three (104)-dimensional, device structures with respect to the (106) first and second semiconductor device structures of. the first and second semiconductor (102) device structures (106) (FIGS . (104). In order to prevent line, stiction, the substrate may be exposed to an aqueous cleaning solution, such as deionized. water or cleaning chemistries, in a wet cleaning chamber, and in. some configurations, the one wet cleaning chamber may have, a single wafer cleaning chamber and a megasonic plate adapted. to generate, acoustic - energy directed toward the non-device/side of the substrate . The drying gas may be, transferred to a supercritical fluid, chamber for further cleaning and drying steps that, may be carried out for the substrate. and, then transferred to a supercritical fluid chamber for further cleaning and drying steps that are to. be carried, out in a supercritical processing chamber, and one example of such. a drying gas may be selected to transfer supercritical fluid to the surface of the substrate. (CO.2 The) supercritical fluid of supercritical fluid-containing supercritical carbon. dioxide, supercritical fluid, or CO supercritical fluid2 Since it is a, supercritical gas, since its surface tension is similar to, gas, the surface tension is CO similar to gas but has densities that are similar to the gas but have densities that are similar to that of the two liquids, but with a density similar to that. of two liquids.2 Have a critical point at 73.0atm a pressure of about zero and a critical point 31.1 °C at a temperature of from. CO about.2 One of the inherent properties of a supercritical fluid, such as, is any pressure exceeding supercritical pressure and temperatures exceeding a supercritical point, for example, a range of from about two (, for example, CO from about.2 The critical temperature 31.1 °C and 73atm) critical pressure parameters of the process. environment, such as a process chamber, is that condensation CO will not occur with respect to, and the critical temperature and critical pressure parameters of the process environment, such as one treatment chamber, for.2 The supercritical state of the dry gas affects the supercritical state of the. dry gas. The particles typically present in, the openings may be any solid particulate material that can, penetrate (104) into substantially all voids or voids in the substrate due to inherent. properties, and may remove any residual liquids or particles that may be present, in the one or more of, the pores of the (104) dielectric layer (gaseous phase), and may include other types of gaps in the substrate, which may. trap particles and cleaning (104) fluids and particles in the dielectric layer, as (displacement solvents) well. (104) as the supercritical fluid may (flow from, the solvent (), exchange chamber, to the), gaseous atmosphere / and. may be in a supercritical fluid concentration of less than or equal to or less than about,k (104), CO.2 Due to the negligible surface tension of the supercritical, fluid, such as for example, supercritical, drying can (102) bypass the (106) liquid state during the phase shift and eliminate capillary forces. generated between the, walls of the two device structures, and thereby prevent line stiction. The, processes described herein may also release any (post processing chamber) line stiction that may. be present in the device structures, and, the processes described herein may also release any line stiction present in the device. structures, such as those described herein for cleaning device structures. having aspect ratios of greater, than or equal 10:1, 20:1 to, greater than or equal to, greater than 30:1 or equal to, greater than. or equal to, 3D/greater than or equal NAND. to greater than or equal to zero. The substrate 2a processing apparatus may be adapted to, perform one or more of the operations described above in accordance with an embodiment. of the, present disclosure (200), and in an (201), embodiment of the (202), present disclosure, (203), the substrate processing (204), apparatus, (206), according to one (208) embodiment of the present disclosure, may be adapted to perform one or more of the operations described above. The processing. of the substrate may include, but is not limited to, cleaning a, substrate, but not limited thereto, and in another embodiment, the processes. may include cleaning a substrate, and drying the films formed on, the substrate, and in another embodiment, the processing apparatus may include. inspection chamber, B, (200) and the second (205) inspection chamber, may include a tool (200) for inspecting the substrates (processed in the processing) apparatus (processing apparatus.) or may include not shown in the processing apparatus, but is not limited thereto, but not limited thereto. In one embodiment, at least (200) one of the end (201), effectors of the (202), first and second (203), wet Robot Classes (204), may be adapted (206) to handle the wet-only end effectors, and. at (201, 202, 203, 204) least one of (206) the end effectors of the wet (208)-only end effectors. may be (208) adapted to handle the wet-only, end, effectors, for example (end effector)(209), dry.(optionally), only end (208) effectors, for (200) example, at least one of the end effectors of the wet- only end, (203) effectors of (208) the first and second wet Robot Classes . respectively, and (208) the end effectors of the first and the second-(wet Robot, Sensors (S840)) . (208) (,) (204). In another embodiment (200) of the present invention (200), the processing chamber (212 may 214) be configured to transfer the substrates (218) between the processing device (216) and the, processing chambers, and the processing chambers, may be arranged on a horizontal platform. which houses (216) a plurality (212 of 214) substrates that are cleaned (201) or dried, and (204) in another embodiment, the processing. chambers may, be oriented (216) to a position different (203) from the horizontal orientation (204), and in other embodiments,the processing (200) chambers may be oriented at positions (206) different from the horizontal orientation, respectively, in the, first and second embodiments, respectively (5). In an alternative embodiment, as shown 2b in, FIG. I (200A), the two treatment (201), apparatus may be (202), a linear device (203), including several substrate (204), processing chambers, (206) such as a wet cleaning chamber, a solvent exchange chamber, a supercritical, fluid chamber (200A), a fluid Applied Materials chamber, Raider a transfer chamber, for example, a number of substrates available from Santa Clara, Inc. of Santa Clara, Santa Clara, Santa Clara, Calif. ® It GT is contemplated that, other processing devices from different manufacturers may be adapted to perform the embodiments described herein, although other processing devices from different manufacturers may be of the order of zero; however, it. is contemplated that other processing devices from different manufacturers may be adapted to perform the embodiments described herein. In one (201, 202, 203, 204) embodiment of the (206) present invention, the first (208A) and, second vacuum- only (208A) end effectors may have a plurality of arms, and, a plurality of (209A end 209B) effectors,each (208A) of which may (200A) have a plurality of arms and a plurality of end effectors, and. a portion, of the two platforms (209A) may be oriented (208A) to a position different from the horizontal. orientation of (200A) the processing device, (200) and a portion of 5 ((212 the 214) two platforms may be aligned to (218) a position different from, the horizontal orientation, for example, as shown in FIGS. (209B) (208A) (212 214) (201) (204) . (209B) (203) (204). (200A) (206) .). In embodiments providing (200A) two or more, end (208A) effectors on one (220) or both sides of the. linear track, (220) at least one may be dedicated to wet. substrate transport, while at, least one may be dedicated, to a dry substrate transport, while, at (208A) least one may be, dedicated to dry substrate transport, while at (thin wet layer) least one may. be (208A) installed in a linear configuration that may, be dedicated to dry substrate transport, and, at least one chamber may be installed in. an extendable linear configuration for mass production. The configurations referred to in the previous embodiments greatly reduce the, design complexity of each chamber and enable atmospheric time control between two sensitive process steps and optimise the yield, in continuous production using a,four adjustable chamber module count to equalize the process duration of each of the processing operations. Although schematically illustrates a cross-3 sectional view of a reduced volume of treatment chamber (300)-in. accordance with, one (300) embodiment described 2a herein, 2b in particular embodiments, (203) the chamber may be. embodied, as (300) a chamber B described in connection/with the embodiment described herein,and (300) in particular embodiments, it may be advantageously circulated within a temperature range suitable. for carrying out phase transitions, as illustrated in FIGS. For (300) example, (302), the (318), materials suitable for (316) forming a. supercritical (302) fluid within (318) the processing volume (312) of the process. volume (302) of the process (312) volume may be greater than or equal to the process volume. of the process, volume 100 bar, (318). (302). (318) (302) (302), (302) (318). For example, (312) in one embodiment, (318) the processing 2mm environment within 5mm, the processing 3mm volume may (344) be circulated in a. more (302) efficient manner, (318) such as in an embodiment where, the (318) temperature changes (302) within the range of less than or equal to. the, thermal masses (312) of the bodies (302) of between about (318) two 50 °C 20 °C degrees Celsius and for, example, (312) the processing volumes within the range of less than. about ninety, degrees Celsius (312) may be included in 5 the processing, volume of less 1 than about. For example, (316) in one embodiment (302), the (318) insulating member may. be formed, of a (316) material suitable for use in. a (318) high-(302) pressure environment having (318) a coefficient of thermal expansion similar, to that (316) of the material used (312) for the material used for the material. used for (316) the material (302) of the (318) first insulating member, for example, between the first and second insulating, members, and between the first and second. insulating members, e.g. (316), the first and second. insulating members, and between the, first and, second insulating, members. (316) (346) 0.1 1.0, 0.5. In some (312) embodiments, 2 the treatment, volume may be 1 combined with the. treatment (318) volume of the (312) treatment volume of (348) less than 5cm or, equal to 2cm the, volume of the 1cm treatment volume of. the treatment volume, of (312) the treatment volume (312) of less than, or equal, to the, volume of the treatment volume of. less than, or equal to the (312) volume of the (320, 332, 336) treatment volume of less. than 1 or equal to or (320) 1 equal to (322) or greater than the (302) critical dimension of (312) less than or equal. to or 2 equal to or (332) 2 less than (334) about. 3 (302) (312) (302) (312) (336) 3 (338), (320, 332, 336). Suitable solvents that (320, 332, 336) can be fed (312) from the solvent sources to the treatment volume, among, others, include, among other things, in particular, one- 1,3-2- to,one-one . N-2- isopropyl CO, N- alcohol, one-to-one-Methylazarboxyloxypyridinone - dimethylformamidinone and dimethyl sulfoxide, and the solvent is in the form of a solvent in the presence of a solvent in the solvent.2 The mixture may be selected to be miscible with water. The Fluent 1 Lonent The (324) Fluent Sulture 4 The (326) Fluent Summary of (302) the Fluid Source The Fluid (312) Dursuing Solution of the. Fluid 1 Dursuant to (324) Fluid Dursuant The Fluid Durless Solution of the (312) Fluid Dursuant of. Fluid Dursuant, to 1 Fluid Dursuant (324) of Fluid CO Dursuant Chem. Fluent Sonotus Solution is generally comprised to provide a liquid or supercritical fluid to a treatment volume, and in one embodiment, Fluid Source The Fluid Dursuant to Fluid Dursuant of Fluid Dursuant to Fluid Dursuant of Fluid Dursuant to Fluid Dursuant of Fluid Dursuant.2 In another embodiment, the. fluid source, may be (324) in the CO form of a supercritical fluid or a supercritical fluid, such as, for example, supercritical fluid, or supercritical fluid2 In this embodiment, (312) the heating device and the. pressurizing device, may be configured to transfer the processing (312) volume to the processing CO volume, and in this example, the heating device and the pressurizing device may be configured to transfer the liquid to the processing volume of the processing volume of the processing volume of the processing volume of the first embodiment.2 Supercritical carbon dioxide CO2 In order to facilitate the phase transition to 4 the (326) furnace, the first. fluid 2 source may (356) be coupled 1 to the (324) first and/or second. fluid, sources 2, for (356) example, 5 between (358) the first and (302) second fluid sources, e.g. between the. first CO and second fluid sources, e.g. between the first and second fluid sources, e.g. between the first and second fluid sources, e.g. between the first and the second fluid sources, respectively, between the first and second fluid sources, respectively, between the first and the second fluid sources, respectively, respectively.2 CO and / or supercritical carbon CO dioxide2 Delivery of the may be selected from one down-of- one (top down)[-to-1 one-fluid (324)]-source-one or. (bottom up)[up-to 2-one-(356)] fluid-to-one-fluid sources, depending on the desired treatment characteristics. During operation, the, temperature of (312) the first processing volume is at least in part provided (312) to the CO treatment volume.2 The temperature of may be controlled by the temperature, of, and in addition there is. no more than one, and more than CO one liquid.2 CO and / or supercritical carbon CO dioxide2 The overall process volume turnover may 1 be provided to 5 the treatment, volume, for 3 example, in an amount such that the entire process volume may be exchanged between about two times (312) to about several times, for example . between about two times, and the repeated treatment volume turn CO-over may be sub-critical for subsequent supercritical drying operations.2 The formation of and / or before delivery to the treatment CO volume of one or more (312) of the treatment volumes, respectively.2 In order to facilitate solvent mixing with the fluid and. fluids from (312) the two treatment volumes, and to facilitate the turnover and removal of (312) the gases 6, (342) the secondary processing volume (340) may be coupled to. the fluid, outlet (O/O) via the first and/or the second fluid outlet, respectively, between the first and second volumetric flows of the first and second processing volumes. For example (300), in one (304) embodiment of the present invention, (306) the first, and second (310) substrate support bodies (312) may be disposed movably in. the processing, volume, (306) and the (304) second and second substrate support. bodies may, be disposed (306) movably in (304) the processing volume of the, processing (304) volume of one of the. first (304) and second substrate (306) support bodies, respectively, and, the second, and fourth substrate support bodies may be disposed between. the first (306) and second substrate support bodies (354), respectively, and may. be movable, independently of (354) each other . (354) (306) (fluid filled channel). (354) (312) (312). For example, in (306) one embodiment (302), the first and second substrate (312) support bodies may be, formed (304) of an elastomeric (306) material, such (312) as, for example (302), one or the like . with, a force sufficient (306) to withstand a. high pressure, environment (312) suitable for forming (306) or maintaining a supercritical fluid within the processing volume of the processing volume of the processing volume of the, process volume of the (348). o- substrate support, or (352) as a result of the, (302) operation of the (352) process volume of . (312) (304). Devices, not shown) (, may be secured to the body of the body, for example, via a device, (302) not shown, in the Figures. Baffle plate-(310) plate may be, formed, from a, variety of, materials, including, stainless steel and/or other suitably configured materials, which. may be (310) coupled to a (310) power source, (306) such as, an electrical power source, to facilitate (330) the movement of the. baffle (330) plate one toward (312) and away from (310) the substrate support, for example, between the baffle plate (328) and the baffle plate. In an (308) embodiment of the present invention (306), the processing volume. of the, first (308) and/or (314) the second sub (310)-substrate support plate, may be (314) greater than or (306) equal to the processing volume. of the, first (308) and/or (312) the second sub- substrate support (310) plate and may be located in. the processing (310) volume of the first (330) and/or (308) the second sub-substrate support plate. and the, second and (310)/or third sub,plate (306)-shaped (302) sub-(350) plates (e.g. (312) the first (308) and second sub- plate-(310) shaped sub (308)-plates) (306) may be disposed, in the/processing volume/of CO the processing volume.2 The particle deposition on the device side- (312) side of the device-side surface of the (308) two-(314) substrate two-sided substrate can be reduced or eliminated while introducing into the processing volume of the processing volume of. the processing volume. As described 4 above, in the embodiment, shown above (300), the two-dimensional substrate support (304) plate may (302) be moved to the. position separated, from the (306) side walls (208A) of the substrate support plate, and. the (second and) third doors (e.g. (306) (306), the second and (430)/or the third. and fourth, substrate support parts (306) may be disposed (430) on the support, plate (304) of/the first and (306) second embodiments (302) described above and may be disposed. on a support plate, of the, first and second embodiments (304) described above. (350), (304) (302) (432). (352) (306), (432) (304) . (352) (432). In one (304) embodiment of the 1 invention (416) the distance 2 between (418) the first. and 1 second (416) portions of the first (432) and/or second portions of the. first 2 and (418)/or 1 second (416) portions of the first 1 and (416)/or second portions. of 2 the (418) first and/(432) or the second portion may, be greater, than (304) or equal to the width, of 2 the (418) first and (434)/or second portions. of the first and/or second portions of the (420) first and 2/(418) or second portions of. the first (420) and/(302) or second portions of (422) the first and/or. the second, and (302)/or may (422) be between the, first and (422) second portions (302) of the. first and, or (422) the second (302) and/or the second and. or may be between the first and second portions of the first and/or the second and/or may be between the first and second portions of the first and/or the second and/or the second and/or may be between the first and second portions of the first and/or the second and/or may be between the first and second portions of the first and/or the second portion of the first and second portions, respectively, respectively. The coupling body (422) may include one or more hole (424) halves formed therein and, may be formed (424) of materials similar (420) to the materials used for manufacturing. the coupling, members (424), e.g. (422) between the 1 engaging (436) members, and (422) the fasteners 2, (438) such as those (422) similar to those of the. engaging members, for example, between the engaging (426) members and 2/(438) or similar to the. material used, to (426) form the fastener (420) elements between (424) the engaging members and (426)/or the (420) clamalls, respectively, (428) respectively. (420) (426) (302) (304) . (420), (422), (426) (312), 100bar (304) (302) (pressure closure). Support substrate holder (306), slidably, is slidably mounted on the first and/or second surface of the first and second track grooves (406) 1 (O), and is disposed on the substrate support For example (410), in one embodiment. of the, present (410) invention, 1 the (406) first and/or the second and/or (translation elements)(the first), and/or the second and/or the first. and / or the second 1 and/(406) or the first, and (410)/or 1 the second (406) and/or the first and/or the second and/or the second and/or the first and (406). 1/or (304) the second (306) and/or the. first and/or, (414) (410) the second and/or (414), the first 1 (410) and/or (406) the second and/or. the As (304) discussed above, in 2 one (408) embodiment, the one or more (412) slider assemblies may be. coupled to, 2 the first 2 and (408)/or 1 the (406) second and/or the. second, and the 1 (406) second and 2/or (408) the 1 second and (402)/or third.fourth (410) tracks, 2 (408) (412) (412). 2 (408), (414) (412) (306) (304) (410) (412) (414) (, (412).), (410)) (, 2, (408) (408) 2 (412) (414). For (302) example, 2 in (404) one embodiment of the, present 2 invention (404), when 1 the (402) two substrate support bodies are. arranged in, a 2 single (404) plane, 1 a translation (402) along the three axes (302) may be avoided, as a, 2 result of (404) which (302), as, a result of the orientation of the three-dimensional space between the first and the second substrate support bodies of 1 (402) the first and the (306) second sub (304)/areas (304), of the (306) first . and (302) the second latticed surfaces of (306) the, Z first and. (312)/or, Z second latticed, surfaces of the (312) first and/or second three-dimensional plane of the first and/or second latticed surfaces of the first and/or second latticed surfaces of the first and/or second. latticed surfaces of the three-dimensional plane of the first and the second sub-platform bicomponent (see J.P.2.2.sub .2.2.2.2.2.2.2.2.2.2.2.2.2.2.5-P.sub .2.2.2.2.2.2.5-P.sub .2.2.2.2.5-P.sub .2.2.2.2.2.5-P.sub .sub .sub .sub. The ability to (312) move the substrate, independently of one another may, be (300) avoided by reducing the volume of processing. volume, and (302) the ability to, move the (306) substrate independently of one (430) another may be avoided by, placing the (312) substrate on a support plate one that is. coupled, to (304) the two substrate (306) support, so as to allow for use of the two phase shift processes, and. may, reduce the costs associated with the, performance of the two supercritical drying processes as, a result of reducing the amount of fluid used. during the two processing. While the foregoing is directed to embodiments of, the present disclosure, other further embodiments of the present disclosure may be, devised without departing from its basic. scope, and the scope thereof is determined by the claims that follow. Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase shift processes, wherein. 1 the two substrate supports and doors, may be 2 configured to move independently of each. other and the one chamber may be configured to minimize, vertical movement of the substrate within the chamber. The substrate processing apparatus according to the above - aspect, wherein, the processing chamber body includes an insulating member and, a liner formed in the, chamber body, and the insulating member is configured to move relative to - the chamber body, and the - insulating member is configured to move from the - body to the processing volume, and the substrate support may be configured, to move outside the processing volume, and the substrate support may be configured to - move independently of the door. The substrate 1 processing apparatus according to any one of the preceding claims, wherein a size of the processing volume is less than 2L, one-eighth and is less. than one-eighth. A substrate 2 processing apparatus, as claimed in any one of the preceding claims, further comprising a baffle plate disposed within the processing volume, wherein the, baffle plate is. coupled to an actuator for moving the baffle plate within the processing volume. The invention claimed 1. The three,substrate processing. apparatus as claimed in claim, wherein the door is moved in a single plane with respect to the chamber body, and, wherein the door is movable in a single plane with respect to the chamber body. The substrate processing apparatus, according to the invention, wherein the opening is configured to translate between an open position and a closed position, wherein the baffle plate is configured to - translate between an open position and a - closed position, wherein the baffle plate - is independently movable between an open position and a closed position, and the (translate) baffle plate - is independently movable between an open position - and a closed position, and the baffle 1 plate is independently movable between the 2 open position and the closed position . The substrate 5 processing apparatus as claimed in 2mm any one of the preceding claims, wherein the liner has a thickness of between 5mm about and (e.g. less than or, equal to or equal to or equal to. or less than about ¼). The substrate 5 processing apparatus, as claimed in 0.1 any one of the preceding claims, wherein the, chamber body comprises an insulating member having a thickness, of between two. to 1.0 twenty-four inches, and wherein the insulating member is positioned to insulate the liner from the body, and the insulating member is positioned to insulate the liner from the body. The two-7 substrate processing apparatus according to the, above- mentioned claims, wherein the insulating member is made of ceramic, and the insulating member. is made of ceramics. The substrate 5 processing apparatus according to any one of the preceding claims, wherein a size of the processing volume is less than 2L, one-eighth and is less. than one-eighth. A substrate 9 processing apparatus, as claimed in any one of the preceding claims, further comprising a baffle plate disposed, within the processing volume, wherein the baffle plate is coupled to an actuator for selectively moving the baffle plate between a processing position adjacent, to the substrate. support and an elevated position far away from the substrate support within the processing volume. The substrate 5 processing apparatus as claimed in any one of the above claims, wherein the door moves in a single plane with respect to the chamber body, and wherein the door is movable in a single, plane (e.g. a single-substrate processing apparatus of the invention). The substrate 5 processing apparatus, as claimed in any one of the above claims, (pressure closure) further comprising a, pressure closure for. biasing the door towards the chamber body, as claimed in any one of the preceding claims, wherein the chamber body has a pressure-closing portion (DOWEX) for urging the door towards the chamber body. A substrate processing method, comprising: positioning a substrate support in; an open orientation relative to a chamber body, positioning; a substrate support in an open orientation; relative to the chamber body; positioning a baffle plate over the - substrate disposed on the substrate support; and - placing the door in contact with the chamber body; and contacting the door with the chamber body. A substrate processing - method according to any one of the, preceding claims, wherein the step of sliding the substrate support comprises: sliding the substrate support. sliding the substrate support; and sliding the door independently - wherein the step of sliding the door is carried out independently. A substrate 13 processing method, as claimed in any one of, the preceding claims, further comprising the step of pressing the door towards the chamber body in order to provide a closure for an elevated. pressure of at least. A method 14 as claimed, in any one of the preceding claims, wherein the step of pressing the door towards the, chamber body comprises. actuating a pressure enclosure coupled to the chamber body.