Substratbehandlungsvorrichtung und Betriebsverfahren

FLUID DELIVERY MECHANISM

PROCESSING DEVICE

Eine Verarbeitungsvorrichtung schließt einen Spanntisch zum Halten eines Werkstücks, eine Verarbeitungseinheit zur Verarbeitung des auf dem Spanntisch gehaltenen Werkstücks, während dem Werkstück Prozesswasser zugeführt wird, und eine an dem Boden der Verarbeitungsvorrichtung befestigte Wasserwanne zur Aufnahme des Prozesswassers bei Wasserleckage ein.

Wafer treatment device and sealing ring for a wafer treatment apparatus

Dichtring (24) zur Anbringung an einem Abdeckring (16) einer Wafer- Behandlungsvorrichtung (10), mit einem ringförmigen Träger (40) und einer Dichtlippe (42), die lösbar am Träger (40) angebracht ist, und Wafer-Behandlungsvorrichtung (10) mit einer Aufnahme (12) für einen Wafer (14), einem Abdeckring (16), der auf die Aufnahme (12) aufgesetzt ist, und einem Dichtring (24) der genannten Art, mit dem ein Wafer (14) auf der Aufnahme (12) abgedichtet werden kann, sowie Verfahren zur Herstellung eines Dichtrings (24) mittels der folgenden Schritte: Zunächst wird ein ringförmiger Träger (40) bereitgestellt, der auf seiner Oberseite mit einer Nut (50) und einer von der Oberseite radial nach innen abfallenden Anlagefläche versehen ist. Außerdem wird eine Dichtlippe (42) bereitgestellt, die mit einem Wulst (52) versehen ist, wobei der Durchmesser des Wulstes (52) im Ausgangszustand der Dichtlippe (42) kleiner ist als der Durchmesser der Nut (50). Dann wird die Dichtlippe (42) in die Nut (50) eingehängt ...

PROCEDURE AND EQUIPMENT FOR THE TREATMENT OF A WORKPIECE, LIKE A SEMICONDUCTOR WAFER

CLEANING DEVICE AND METHOD

A cleaning kit (101) for use in cleaning surfaces in clean rooms, semiconductor fabrication plants, pharmaceutical manufacturing facilities, etc. A stack of extremely clean wipers (14) is packaged together with a container (100) of cleaning fluid in a liquid-tight outer container (18). The kit is stored until just before it is to be used. Fluid is released from the inner container (100) into the wipers. In one embodiment, fluid is released from the inner container (100) into the wipers (14), preferably by means of a puncturing device (102) operable to puncture one of the walls of the inner container (100) by the application of pressure in a limited area on the outside of the outer container (18). The puncturing device is located away from the edges of the package to minimize the chances of accidental puncture. The cleaning liquid is allowed to soak into the wipers, and the wipers (14) are removed from the outer container (18) for use. The container can be resealed to protect the wipers ...

Metal stripping tool and method

SURFACE DRESSING Of a PLATE SEMICONDUCTRICE BEFORE JOINING

Reduced volume treatment chamber

WET SCRUBBER

The present invention relates to a wet scrubber which comprises: a gas inducing and cleaning unit for cleaning and primary purifying harmful gas after inducing the harmful gas inside; and a filtering unit coupled to be detachable in an upper part of the gas inducing and cleaning unit for filtering and second purifying remained gas which is remained in the gas inducing and cleaning unit, and moved upward. COPYRIGHT KIPO 2016 ...

METHOD AND DEVICE FOR TREATING SUBSTRATES AND CORRESPONDING NOZZLE UNIT

기판 처리 장치 및 방법

... 본 발명은 기판 처리 방법에 관한 것이다. 본 발명의 일 실시 예에 따른 기판 처리 방법은, 상부가 개방된 컵 내에 배치된 스핀 헤드에 놓인 기판을 회전시키면서 상기 기판으로 처리액을 공급하여 기판을 처리하는 기판 처리 단계와; 상기 스핀 헤드에서 기판이 제거된 상태에서 상기 스핀 헤드를 회전시키면서 상기 스핀 헤드의 상면으로 세정액을 공급하여 상기 컵을 세정하는 컵 세정 단계를 포함하되, 상기 컵 세정 단계에서 상기 스핀 헤드의 회전 속도는 상기 기판 처리 단계에서 상기 스핀 헤드의 회전 속도보다 빠르다.

Apparatus and Method for treating substrate

ARRANGEMENT AND A METHOD FOR REDUCING CONTAMINATION WITH PARTICLES ON A SUBSTRATE IN A PROCESS TOOL

전산화성 물질 농도의 측정 방법, 기판 세정 방법 및 기판 세정 시스템

... 세정 시스템 등의 전해 황산의 전산화성 물질 농도를 온라인으로 모니터링하는 것을 가능하게 하기 위해, 전해 황산의 황산 농도와 같은 황산 농도의 전해 황산 조제액을 표준 시료액으로 해서 전산화성 물질 농도와 관련지어서 베이스라인 보정한 흡광도 데이터를 이용하고, 황산 농도가 60∼97질량%, 액온이 20∼70℃인 전해 황산을 시료액으로 해서 파장 190∼290㎚로 흡광도 측정함으로써, 상기 데이터 에 의거하여 상기 전해 황산 중의 전산화성 물질 농도를 측정함으로써 전해 황산에 있어서의 전산화성 물질 농도를 즉시 측정하는 것을 가능하게 한다.

스핀식 헹굼 건조 장치

... 본 발명은 스핀식 헹굼 건조 장치에 관한 것으로, 스핀식 헹굼 건조 장치는, 상부에 기판이 안착되며 회전 가능하게 마련되는 기판거치부와, 기판거치부의 측면 둘레에 배치되는 가드링과, 기판거치부의 주변을 감싸도록 형성되며 가드링의 내부에 배치되는 스핀커버를 포함하는 것에 의하여, 기판거치부가 회전함에 따른 상승 기류를 저감시키고, 기판의 2차 오염을 방지하는 유리한 효과를 얻을 수 있다.

LIQUID PROCESS APPARATUS TO ELIMINATE THE NECESSITY FOR A SEPARATION UNIT FOR SEPARATING DRAIN GAS FROM DRAIN LIQUID

PURPOSE: A liquid process apparatus is provided to efficiently induce process liquid to a liquid drain hole by enabling uniform draining on the entire circumference of a gas drain cup. CONSTITUTION: A substrate maintenance part(2) horizontally maintains a substrate, capable of rotating together with the substrate. A rotation cup(4) surrounds the substrate maintained by the substrate maintenance part, rotating together with the substrate and receiving process liquid removed from the substrate. A rotation unit rotates the rotation cup and the substrate maintenance part together. A process liquid supply unit supplies process liquid to the substrate. A liquid drain cup(51) of an annular type receives and drains the process liquid exhausted from the rotation cup, surrounding the outer part of the rotation cup. A gas drain cup(52) of an annular type introduces mainly a gas component from the rotation cup and the periphery of the rotation cup, concentrically installed with respect to the liquid ...

DEOXYGENATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS

A deoxygenation apparatus is an apparatus for reducing the dissolved oxygen concentration of a target solution. The deoxygenation apparatus comprises a storage tank for storing a target solution; a gas supply part which supplies an addition gas different from oxygen to the target solution in the storage bath; a memory part which memorizes correlation information which shows a relation between the dissolved oxygen concentration of the target solution and the total supply amount which is the total amount from the supply start of the addition gas supplied to the target solution from the a gas supply part; and a calculation part which obtains the dissolved oxygen concentration of the target solution based on the total supply amount and the correlation information. Thereby, the dissolved oxygen concentration of the target liquid can be easily obtained without measuring the dissolved oxygen concentration of the target liquid by an oximeter or the like. COPYRIGHT KIPO 2016 (73) Memory part (74 ...

SUBSTRATE COOLING METHOD AND SUBSTRATE TRANSFER METHOD OF LOAD-LOCK APPARATUS, AND LOAD-LOCK APPARATUS

Provided is a technique for efficiently and sufficiently recovering from bending of a substrate in a load lock apparatus while cooling the substrate with high efficiency. According to the present invention, the substrate cooling method of a load lock apparatus for cooling a hot substrate comprises: a process of holding the inside of a container at a second pressure, having the container communicate with a second module, and bringing the hot substrate into the container; a process of placing the substrate in a cooling position close to a cooling member; a process of ventilating the inside of the container such that a region between a surface of the cooling member and another surface of the substrate has a third pressure satisfying a molecular flow condition; and a process of introducing a purge gas into the container, raising the pressure in the container to a first pressure, and cooling the substrate by heat transfer from the cooling member in the process. COPYRIGHT KIPO 2017 (AA) Carrying ...

음향 에너지를 이용하여 기판을 처리하기 위한 시스템

... 본 발명은 음향에너지를 이용하여 기판을 처리하기 위한 시스템, 장치 및 방법에 관한 것이다. 일 측면에서, 본 발명은 평평한 물품을 지지하는 지지부; 상기 지지부상에 있는 상기 평평한 물품의 제1표면으로 액체를 공급하는 디스펜서; 길이방향축을 갖는 전송구조부; 상기 길이방향축의 제1면상에서 이격 방식으로 상기 전송구조부와 음향적으로 결합되어 있는 트랜스듀서의 제1세트; 및 상기 길이방향축의 제2면상에서 이격 방식으로 상기 전송구조부와 음향적으로 결합되어 있는 트랜스듀서의 제2세트를 포함하고, 상기 제1세트와 제2세트의 트랜스듀서들은 상기 길이방향축을 따라 엇갈리게 위치되어 있는 트랜스듀서 어셈블리를 포함하는 평평한 물품을 처리하는 시스템으로서, 상기 트랜스듀서 어셈블리는, 상기 디스펜서가 상기 지지부상에 있는 상기 평평한 물품의 제1표면에 액체를 공급할 때, 상기 전송구조부와 상기 평평한 물품의 제1표면 사이에 액체막이 형성되도록 위치되어 있는 평평한 물품을 처리하는 시스템일 수 있다.

기판 처리 장치 및 기판 처리 방법

... 적어도 질화막과 산화막이 형성된 기판을 처리하는 기판 처리 장치에 있어서, 인산 수용액을 저류하는 인산 수용액 저류부와, 상기 인산 수용액 저류부에 인산 수용액 공급 배관을 통해 인산 수용액을 공급하는 인산 수용액 공급부와, 상기 인산 수용액 저류부에 실리카 첨가제 공급 배관을 통해 실리카 첨가제를 공급하는 실리카 첨가제 공급부와, 상기 인산 수용액 저류부에 물 공급 배관을 통해 물을 공급하는 물 공급부와, 상기 인산 수용액 저류부에 저류된 상기 인산 수용액에 의해 상기 기판을 처리하는 처리부를 가지며, 상기 실리카 첨가제 공급 배관은, 상기 물 공급 배관의 도중에 접속되어, 실리카 첨가제를 이용한 처리라도, 적정한 실리카 농도로 기판 처리를 실행할 수 있다.

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

WAFER CLEANING APPARATUS AND WAFER CLEANING METHOD USING SAME

The present invention relates to a wafer cleaning apparatus in which a vortex is not formed due to wafer rotation, and a wafer cleaning method using the same. The wafer cleaning apparatus for cleaning a wafer comprises: a support supporting a wafer; a body surrounding the support and having an outer surface; a chamber lid which surrounds a body, is separated from the body to move from the body and includes an inner surface; and a passage formed between an outer surface of the body and an inner surface of the chamber lid. COPYRIGHT KIPO 2018 ...

기판 처리 장치 및 기판 처리 방법

... 물을 함유하는 린스액이 수평하게 유지되고 있는 기판에 공급된 후, 린스액이 부착되어 있는 기판에 이소프로필알코올을 함유하는 IPA 함유액이 공급된다. 그 후, 수분 농도가 낮은 IPA 함유액이 기판에 공급된다. 기판에 공급된 IPA 함유액은, 다시 기판에 공급하기 위해서 회수된다.

PUMP AND DEVICE FOR SUPPLYING FLUID

The present invention relates to a pump for preventing dewing or freezing generated on a surface. According to the present invention, the pump comprises: a pump main body; a silencer connected to the pump main body; and a dewing prevention device surrounding the silencer. COPYRIGHT KIPO 2017 ...

기판 처리 장치, 기판 처리 방법 및 기억 매체

... 기판 처리 장치는, 기판 유지부(31)를 둘러싸서 기판에 공급된 처리액 또는 처리액의 미스트를 받는 처리 용기에 대하여 상대적으로 부동인 고정 컵체(51)와, 미스트 가드(80)와, 미스트 가드를 승강시키는 가드 승강 기구(84)를 구비한다. 미스트 가드는, 고정 컵체를 둘러싸도록 고정 컵체의 외측에 마련되고, 고정 컵체의 상방을 넘어 외방으로 비산하는 액을 차단한다. 미스트 가드가, 통 형상의 통부(81)와, 통부의 상단으로부터 고정 컵체를 향하여 돌출하는 돌출부(82)를 가진다.

DEVICE AND METHOD FOR TREATING SUBSTRATE

The present invention relates to a device for treating a substrate. According to an embodiment of the present invention, the device for treating the substrate includes: an injection member which has a first nozzle for supplying first liquid to a substrate placed on a support unit, and a second nozzle for supplying second liquid different from the first liquid on the substrate placed on the support unit; and a controller which supplies the first liquid before suppling the second liquid and controlling to supply the different kinds of the first liquid according to the kind of a thin film on the substrate placed on the support unit. Accordingly, the present invention can reduce time for coating chemical on the substrate. COPYRIGHT KIPO 2016 ...

SUBSTRATE PROCESSING APPARATUS　AND　IN LINE TYPE SUBSTRATE PROCESSING　SYSTEM USING THE SAME

METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFER

The present invention relates to a method for effectively cleaning a semiconductor wafer. The method comprises the steps of: preparing a wafer; dry-cleaning the wafer; and wet-cleaning the wafer, wherein the wafer is heated in the step of wet-cleaning. COPYRIGHT KIPO 2018 ...

APPARATUS FOR TREATING SUBSTRATE

The present invention provides an apparatus and a method for treating a substrate in a high-pressure atmosphere. The apparatus for treating the substrate includes: a housing formed therein with an accommodation space; a processing chamber disposed in the accommodation space and having an upper body and a lower body combined with each other to provide a processing space in the processing chamber; an up-down member for moving one of the upper body and the lower body up and down to an opening position in which the one of the upper body and the lower body is spaced apart from a remaining one of the upper body and the lower body supported by the housing or a closing position in which close contact faces facing each other makes close contact with each other; a clamping member for clamping the upper body and the lower body disposed at the closing position; a moving member for moving the clamping member to a locking position in which the clamping member clamps the upper body and the lower body ...

Systems and method for generating a conductive liquid comprising deionized water with ammonia gas dissolved therein

Method for forming fine pattern of semiconductor device

A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.

Cleaning device for silicon substrate

Substrate processing apparatus wherein the conductive member of the chuck member is protected so as not to be affected by heat sources, and the processing liquid remaining between the conductive member and the chuck cover is reduced

A substrate processing apparatus includes a plurality of chuck members 13 for holding the substrate W horizontally in a horizontal posture by clamping it horizontally; a processing liquid supply means for supplying the processing liquid to the substrate W; and a heat source disposed above the substrate W. The chuck members 13 include a conductive member 41, at least a portion of which is formed of a carbon-containing material, and includes a base portion 46 disposed below the substrate W, and a contact portion 47 protruded upward from the upper surface 46a of the base portion 46 to press against the outer peripheral portion of the substrate W, and a chuck cover 42 mounted on the conductive member 41 so as to cover the contact portion 47 without covering at least a portion of the base portion 46 when viewed from above.

Apparatus for treating substrate and method for treating substrate

Embodiments of the inventive concept provide an apparatus for treating a substrate. According to an exemplary embodiment, an apparatus for treating a substrate comprises a first valve and a second valve sequentially installed along a direction from a fluid supplying source to a high-pressure chamber in the supply line; a branch line branching from the supply line between the first valve and the second valve and connected to an exhaust line; a third valve installed on the branch line; an exhaust unit exhausting the process fluid inside the high-pressure chamber; and a controller, wherein the controller is configured to perform, before a transfer robot transfers the substrate to the high-pressure chamber for treating the substrate, a first operating of opening the first valve and closing the second valve and a third valve, and a second operating of closing the first valve and the second valve, and opening the third valve.

Substrate processing method and substrate processing apparatus

A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.

Systems and methods for generating a dissolved ammonia solution with reduced dissolved carrier gas and oxygen content

Systems and methods are described for supplying a rinsing liquid including ultrapure water and an ammonia gas. The system includes an ultrapure water source and a gas mixture source in fluid communication with a contactor. The gas mixture includes ammonia gas and a carrier gas. The system includes a control unit configured to adjust a flow rate of the ultrapure water source such that an operational pressure of the contactor remains below a pressure threshold. The system includes a compressor configured to remove a residual transfer gas out of the contactor. The contactor generates a rinsing liquid having ultrapure water and a concentration of the ammonia gas dissolved therein. The system includes a pump in fluid communication between the contactor and an outlet. The pump is configured to deliver the rinsing liquid having a gaseous partial pressure below the pressure threshold at the outlet.

Method and arrangement for semiconductor manufacturing

A washing water supply arrangement (50) comprises an ultra-pure water production unit (54), a supply pipe (52), an operation control (53) and an ultrapure water impellent arrangement (55). A first end of the supply pipe (52) is connected to an output from the ultra- pure water production unit (54). A second end of the supply pipe is adapted for being connected to a semiconductor washing apparatus. The operation control (53) is configured for controlling the ultra-pure water production unit (54) to produce a predetermined amount of ultra-pure water upon demand. The ultra-pure water impellent arrangement (55) has access to a source of an inert gas and is configured for rinsing the supply pipe (52) from water with the inert gas after delivery of the pre-determined amount of ultra-pure water. A semiconductor washing system, a semiconductor production system and a method for supplying washing water are also disclosed.

EDGE WHEEL DRY MANIFOLD

A apparatus for drying a substrate (10) includes a vacuum manifold (120) positioned adjacent to an edge wheel (102). The edge wheel includes an edge wheel groove (104) for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end (126) having one or more vacuum ports (128) defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.

WET CHEMICAL PROCESSING CHAMBERS FOR PROCESSING MICROFEATURE WORKPIECES

A wet chemical processing chamber comprising a fixed unit, a detachable unit releasably coupled to the fixed unit, a seal contacting the fixed unit and the detachable unit, and a processing component disposed in the fixed unit and/or the detachable unit. The fixed unit can have a first flow system configured to direct a processing fluid through the fixed unit and a mounting fixture for fixedly attaching the fixed unit to a platform or deck of an integrated processing tool. The detachable unit can include a second flow system configured to direct the processing fluid to and/or from the first flow system of the fixed unit. The seal has an orifice through which processing fluid can flow between the first and second flow systems, and the processing component can impart a property to the processing fluid for processing a surface on a microfeature workpiece having submicron microfeatures.

Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications

A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.

Precompressed coating of internal members in a supercritical fluid processing system

A processing system utilizing a supercritical fluid for treating a substrate is described as having internal members having a coating and coated internal members for such a system, with the coating prestressed to reduce the problem of generating coating stresses during processing. For example, the coating in internal members can reduce particulate contamination during processing. Additionally, a method for applying the coating to the internal member of the processing system is described, whereby stresses within the coating are relieved in the coating when the part is used in high pressure processing. The method is particularly useful for preventing or reducing high tensile stresses in coatings during high pressure processing.

Proximity meniscus manifold

An apparatus for processing a substrate is provided which includes a first manifold module to generate a fluid meniscus on a substrate surface. The apparatus also includes a second manifold module to connect with the first manifold module and also to move the first manifold module into close proximity to the substrate surface to generate the fluid meniscus.

Substrate processing apparatus

A substrate processing apparatus includes a processing section that performs a batch process to a plurality of substrates. A first substrate transport mechanism removes one of substrates contained in a substrate container placed on a stage, and transport the substrate to a position adjusting unit, in which the position of the substrate in the rotating direction of the substrate is adjusted, and transports the substrate back to the substrate container. Then a second substrate transport mechanism collectively removes from the substrate container the substrates whose positions in the rotating direction have been adjusted by the position adjusting unit.

SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS

A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.

METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE

A method which can perform a soft pre-wetting treatment of a substrate, such as a wafer, with use of a pre-wetting liquid in a smaller amount. This method includes: holding a substrate between a first holding member and a second holding member, with the surface of the substrate being exposed through an opening of the second holding member, and pressing a sealing ridge of the substrate holder against a peripheral portion of the substrate; pressing a sealing block against the substrate holder; forming a vacuum in an external space; performing a seal inspection to check a sealed state provided by the sealing ridge based on a change in pressure in the external space; and performing a pre-wetting treatment by supplying a pre-wetting liquid to the external space while evacuating air from the external space to bring the pre-wetting liquid into contact with the exposed surface of the substrate.

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD

A processing solution containing solvent and solute is supplied onto a substrate (). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate () by supplying a removal liquid onto the substrate (). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component. 1. A substrate cleaning apparatus comprising:a processing solution supply part that supplies a processing solution containing solvent and solute, onto a substrate;a removal liquid supply part that supplies a removal liquid onto said substrate; anda controller that controls said processing solution supply part and said removal liquid supply part,wherein said solvent has volatility,said processing solution transforms into a particle retention layer as a result of at least part of said solvent being volatilized from said processing solution supplied onto said substrate and causing said processing solution to solidify or harden,a solute component that is said solute contained in said particle retention layer or that is derived from said solute is insoluble or poorly soluble in said removal liquid, and said solvent is soluble in said removal liquid,said solute component contained in said particle retention layer has a property of being altered to become soluble in said removal liquid when heated to a temperature higher than or equal to an alteration ...

Processing of semiconductor components with dense processing fluids

Apparatus for processing an article with a single-phase supercritical dense processing fluid in a processing chamber while applying ultrasonic energy during processing. The single-phase supercritical dense fluid may be generated in a separate pressurization vessel and transferred to the processing chamber, or alternatively may be generated directly in the processing chamber. A processing agent may be added to the pressurization vessel, to the processing chamber, or to the single-phase supercritical dense fluid during transfer from the pressurization vessel to the processing chamber. The ultrasonic energy may be generated continuously at a constant frequency or at variable frequencies. Alternatively, the ultrasonic energy may be generated intermittently.

Process and apparatus for treating a workpiece with hydrofluoric acid and ozone

A workpiece or substrate is placed in a support in a reaction chamber. A heated process liquid is sprayed onto the substrate. The thickness of the layer of process liquid formed on the substrate is controlled, e.g., by spinning the substrate. Ozone is introduced into the reaction chamber by injection into the liquid or into the reaction chamber, while the temperature of the substrate is controlled, to chemically process the substrate. The substrate is then rinsed and dried.

SUBSTRATE SUPPORT AND BAFFLE APPARATUS

A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

Process and apparatus for treating a workpiece using ozone

A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

METHODS AND APPARATUS FOR CLEANING A SUBSTRATE

Wafer washing method and apparatus

MECHANISM AND PROCEDURE FOR THE WET TREATMENT OF DISKWELL-BEHAVED ARTICLES

Wafer treatment device and sealing ring for a wafer treatment apparatus

Dichtring (24) zur Anbringung an einem Abdeckring (16) einer Wafer-Behandlungsvorrichtung (10), mit einem ringförmigen Träger (40) und einer Dichtlippe (42), die lösbar am Träger (40) angebracht ist, wobei die Dichtlippe (42) in eine Nut (50) im Träger (40) eingehängt ist, wobei die Dichtlippe (42) sich ausgehend von der Nut (50) über einen Teil der Oberseite des Trägers (40) und über eine konische Anlagefläche (54) erstreckt, bis sie mit ihrem freien Ende über die Unterseite des Trägers (40) hervorsteht, und Wafer-Behandlungsvorrichtung (10) mit einer Aufnahme (12) für einen Wafer (14), einem Abdeckring (16), der auf die Aufnahme (12) aufgesetzt ist, und einem Dichtring (24) der genannten Art, mit dem ein Wafer (14) auf der Aufnahme (12) abgedichtet werden kann, wobei der Abdeckring (16) mit einem Entlüftungskanal (62) versehen ist, der zu einer Anlagefläche für den Dichtring (24) am Abdeckring (16) geöffnet ist, sowie Verfahren zur Herstellung eines Dichtrings (24) für die Anbringung ...

Wafer-Behandlungsvorrichtung und Dichtring für eine Wafer-Behandlungsvorrichtung

A sealing ring for attaching to a cover ring of a wafer treating device has an annular carrier and a sealing lip which is releasably attached to the carrier.

Nozzle tip adaptor, nozzle assembly and nozzle

Die Erfindung betrifft einen Düsenspitzenadapter (2) zum Montieren einer Düsenspitze zu einer Substratverarbeitungsvorrichtung, eine Düsenanordnung (10) für eine Substratverarbeitungsvorrichtung sowie eine Düse (60) zum Zuführen einer Flüssigkeit zu einem Substrat. Der Düsenspitzenadapter (12) hat einen Saugkanal (34), einen Zufuhrkanal (36) und einen Grundkörper (16) mit einem Vorrichtungs-Ende (18) und einem Substrat-Ende (20). Der Grundkörper (16) hat eine Düsenspitzenaussparung (26) an seinem Substrat-Ende (20) zum Aufnehmen einer Düsenspitze (14) und einen vorstehenden Abschnitt (30), der sich in die Düsenspitzenaussparung (26) erstreckt, wobei sich der Saugkanal (34) durch den vorstehenden Abschnitt (30) erstreckt und der Zufuhrkanal (36) in die Düsenspitzenaussparung (26) hinein öffnet, wobei der Saugkanal (34) mindestens teilweise von dem Zufuhrkanal (36) umgeben ist. Des Weiteren sind die Düsenanordnung (10) und die Düse (60) gezeigt.

SURFACE TREATMENT OF A DISK BEFORE STICKING

METHOD AND APPARATUS OF SEALING WAFER BACKSIDE FOR FULL-FACE ELECTROCHEMICAL PLATING

METHOD AND DEVICE FOR TREATING SUBSTRATES AND CORRESPONDING NOZZLE UNIT

METHOD AND ARRANGEMENT FOR SEMICONDUCTOR MANUFACTURING

A washing water supply arrangement (50) comprises an ultra-pure water production unit (54), a supply pipe (52), an operation control (53) and anultra-pure water impellent arrangement (55). A first end of the supply pipe (52) is connected to an output from the ultra-pure water production unit (54). A second end of the supply pipe is adapted for being connected to a semiconductor washing apparatus. The operation control (53) is configured for controlling the ultra-pure water production unit (54) to produce a pre-determined amount of ultra-pure water upon demand. The ultra-pure water impellent arrangement (55) has access to a source of an inert gas and is configured for rinsing the supply pipe (52) from water with the inert gas after delivery of the pre-determined amount of ultra-pure water.A semiconductor washing system, a semiconductor production system and a method for supplying washing water are also disclosed.

Semiconductor wafer grinding device with cleaning function

Edge wheel dry manifold

Processing the at least one carrier and processing apparatus

The base plate of the processing space is limited

Assembly for Storing Chemical and Apparatus for Dispensing Chemical having the same

기판 건조 장치 및 방법

... 본 발명에 따른 기판 건조 장치는 기판을 처리하는 공간을 제공하는 챔버와; 상기 챔버에 공정 유체를 공급하는 유체 공급 유닛을 포함하되, 상기 유체 공급 유닛은, 상기 유체가 저장되는 공급 탱크와; 상기 공급 탱크와 상기 챔버를 연결하는 공급 라인과; 상기 공급 라인의 제1 지점에서 분기되고, 상기 공급 라인의 제2 지점에서 연결되는 분기 라인과; 상기 제1 지점과 상기 제2 지점 사이에서 상기 공급 라인과 상기 분기 라인을 흐르는 유체의 온도가 상이하도록 상기 유체의 온도를 조절하는 온도 조절 유닛;을 포함한다.

PROCESSING LIQUID SUPPLYING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND PROCESSING LIQUID SUPPLYING METHOD

SUBSTRATE SUPPORT AND BAFFLE APPARATUS

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

IN-LINE WET BENCH DEVICE AND METHOD FOR THE WET-CHEMICAL TREATMENT OF SEMICONDUCTOR WAFERS

SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD FOR SUBSTRATE PROCESSING APPARATUS

The present invention relates to a substrate processing apparatus and a cleaning method for the substrate processing apparatus. The substrate processing apparatus according to an embodiment of the present invention includes a spin chuck for supporting a substrate; a support shaft rotatably supporting the spin chuck; a cup positioned around the spin chuck; and a chemical liquid supply unit for supplying an organic solvent for cleaning the spin chuck to the spin chuck. It is possible to treat the substrate efficiently. COPYRIGHT KIPO 2018 ...

SUBSTRATE PROCESSING APPARATUS

An objective of the present invention is to provide a substrate processing apparatus simplifying a bonding structure capable of firmly maintaining a state in which a bonding portion of first and second housings for sealing a substrate processing space are bonded when processing a substrate. According to one embodiment of the present invention, the substrate processing apparatus comprises: a first housing; a second housing electromagnetically coupled to the first housing; and a housing coupling unit provided at a bonding portion between the first and second housings and forming magnetic force, when a current is applied, to bind the first and second housings. COPYRIGHT KIPO 2019 ...

DEVICE AND METHOD FOR PROCESSING SUBSTRATE

The present invention provides a device and a method for processing a substrate, capable of reducing a supercritical treatment processing time. According to an embodiment of the present invention, the method for processing a substrate comprises: a mixed liquid supplying step of supplying a mixed liquid produced by mixing an organic solvent with an additive onto the substrate; and a mixed liquid drying step of supplying a supercritical fluid to the substrate, dissolving the mixed liquid in the supercritical fluid, and removing the mixed liquid from the substrate. The additive has a lower surface tension and a lower boiling point than the organic solvent. COPYRIGHT KIPO 2018 (S10) Mixed liquid supplying step (S20) Transfer step (S30) Mixed liquid drying step ...

기판 액 처리 장치 및 기판 액 처리 방법

... 기판 액 처리 장치는, 웨이퍼를 보유 지지하여 회전하는 척(13)과, 웨이퍼의 이면을 향해 퍼지 가스를 분사하는 이면 퍼지 노즐(15)과, 퍼지 가스를 웨이퍼의 이면에 분사하는 주연 퍼지 노즐(16)을 구비하고 있다. 이면 퍼지 노즐은, 평면에서 볼 때 기판의 중심측으로부터 주연측으로 연장되는 슬릿 형상의 개구부(15a)를 갖고, 이 슬릿 형상의 개구부와 척에 의해 보유 지지된 기판 사이의 연직 방향 거리는, 상기 개구부의 기판 중심측의 단부에 근접함에 따라서 넓어져 있다. 주연 퍼지 노즐은, 기판의 이면 중, 이면 퍼지 노즐의 슬릿 형상의 개구부의 기판 주연측의 단부보다도 외측이며, 또한 기판의 주연의 단부면보다도 내측에 있는 영역을 향해, 퍼지 가스를 기판의 중심부를 향해 분사한다.

반도체 웨이퍼 세정 시스템

... 본 발명은 반도체 웨이퍼 세정 장치에 대하여 제공하며, 반도체 웨이퍼 세정 장치는 제1 지지 유닛, 제1 챔버를 갖는 가동 유닛, 제2 챔버를 갖는 제2 지지 유닛 및 제3 지지 유닛을 포함한다. 제1 챔버가 제2 챔버와 접촉하게 될 때 반도체 웨이퍼가 처리되는 미세 공정 챔버가 형성된다. 각각의 지지 유닛은 대응하는 지지 플레이트에 의해 지지되며, 각각의 지지 플레이트는 그 주변부에서 복수개의 지지 막대에 의해 강화되고 위치 고정된다. 이러한 설계는 지지 플레이트의 변형을 막고, 미세 공정 챔버의 개방 또는 폐쇄로 인한 일부분의 마찰에 의해 발생되는 입자를 감소시키며, 이러한 유닛의 정렬을 용이하게 할 수 있다.

LIQUID MIXING UNIT AND SUBSTRATE PROCESSING APPARATUS

The present invention relates to a liquid mixing unit and a substrate processing apparatus. According to an embodiment of the present invention, the liquid mixing unit comprises: a housing having an inner space; a mixing member positioned in the inner space, and including a mixer having a mixing space inside the mixing member; a plurality of liquid inflow tubes supplying each of a plurality of liquids to the mixing space; and a liquid supply tube for supplying the liquid mixed in the inner space to the outside. Holes for connecting the mixing space and the inner space are formed in the mixer. COPYRIGHT KIPO 2017 ...

SUBSTRATE PROCESSING APPARATUS

An objective of the present invention is to transport a plurality of substrates at once even when a bent substrate is handled by a batch-type substrate processing apparatus. The substrate processing apparatus comprises: an arrangement base (15B) to arrange a substrate storage container (F) storing a plurality of substrates (W) received from outside the substrate processing apparatus; a single-type position adjustment unit (70) to adjust a rotational direction position of a substrate; a first substrate transport mechanism (60) to perform an operation of discharging a single substrate among the plurality of substrates stored in the substrate storage container to transport the substrate to the position adjustment unit, and an operation of transporting the single substrate whose rotational direction position is adjusted by the position adjustment unit to the substrate storage container; and a second substrate transport mechanism (19) to discharge a plurality of substrates with adjusted rotational ...

APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

An embodiment of the present invention provides an apparatus and a method for liquid processing a substrate. The substrate processing apparatus comprises: a liquid processing unit for liquid-processing a substrate by supplying a liquid onto the substrate; a weight measuring unit for measuring the weight of the liquid remaining on the substrate; and a transfer unit for transferring the substrate between the liquid processing unit and the weight measuring unit, thereby performing weight measurement of the residual liquid more quickly. COPYRIGHT KIPO 2017 (600) Controller ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

The present invention relates to a substrate processing technique which sublimes a sublimation material after vaporizing a solvent component from a liquid containing the sublimation material from a substrate surface. In a short packed time, the technique is able to implement substrate processing at an excellent energy efficiency. A substrate processing apparatus comprises: a firs chamber; a liquid film formation portion forming a liquid film (P) of a liquid containing a sublimation material having sublimate property on a substrate surface within the first chamber; a second chamber (30) for storing a substrate (W) formed with the liquid film (P); a plate portion (311) formed within the second chamber (30) and placing the substrate (W) on an upper surface thereof; temperature control portions (312, 335) for controlling increase of temperature up to a predetermined temperature for the upper surface of the plate portion; and a heating portion (322) for heating the sublimation material precipitated ...

기판온도 안정화 장치

... 기판온도 안정화 장치와 방법에 관한 발명이 개시된다. 개시된 기판온도 안정화 장치는 기판에 접촉되는 약액 또는 기판과 약액이 접촉되는 계면의 산출온도를 측정하는 측정유닛을 포함하고, 측정유닛은 약액을 기판에 공급한 상태에서 약액 또는 계면에서의 방사율이 입력되는 방사율설정부, 약액 또는 계면에서 방사되는 복사에너지가 입력되는 복사에너지입력부 및 방사율과 복사에너지를 통해 약액 또는 계면의 산출온도를 산출하는 산출부를 포함하는 것을 특징으로 한다.

Method and Apparatus for treating substrate

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate processing method of the present invention is performed in a substrate processing apparatus comprising: a recovery cup in which a recovery space to which a chemical liquid used for processing a substrate is induced is partitioned; a recovery pipe which is used for recovering the chemical liquid induced to the recovery space; a drainage pipe which is used for discharging the liquid induced to the recovery space; and a switching unit which switches the liquid induced to the recovery space to the recovery pipe and the drainage pipe. The substrate processing method comprises: a chemical liquid supply step of supplying a chemical liquid to a substrate; an elapsed period measuring step of measuring an after-the-completion elapsed period, which is an elapsed period after the completion of the chemical liquid supply step; a recovery step of controlling the switching unit to be in a recovery guiding state in which the liquid induced to the recovery space is induced to the recovery pipe ...

Reduced volume processing chamber

Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

Substrate processing method, and substrate processing device

This substrate processing method involves a chemical solution step for supplying a chemical solution to the top surface of a substrate held horizontally by means of a substrate holding unit, and a puddle rinse step for washing off the chemical solution attached to the top surface of the substrate by holding the liquid film of a puddled rinse solution on the top surface of the substrate while keeping the rotational speed of the substrate to zero or to a low speed, wherein the chemical solution step includes a chemical solution puddle step for holding the liquid film of a puddled chemical solution on the top surface of the substrate while the rotational speed of the substrate is kept at zero or at a low speed, the puddle rinse step is carried out following the completion of said chemical puddle step, and the puddle rinse step includes a step for supplying the rinse solution to the top surface of the substrate and for replacing the liquid film of the chemical solution held on the top surface ...

Measuring method for concentration of total oxidizing substance, substrate cleaning method and substrate cleaning system

For monitoring online a concentration of total oxidizing substance of an electrolytic sulfuric acid for cleaning a system, etc., absorbance data are used. The absorbance data are obtained by using a prepared solution of electrolytic sulfuric acid which has the same sulfuric acid concentration with the electrolytic sulfuric acid as a standard sample solution, and conducting baseline correction associatively with the concentration of total oxidizing substance. Further, an electrolytic sulfuric acid having a sulfuric acid concentration of 60-97 mass% and a solution temperature of 20-70DEG C is used as a sample solution, and absorbance measurement is conducted with a wavelength of 190-290 nm. Therefore, the concentration of total oxidizing substance in the electrolytic sulfuric acid is measured based on the data, and the concentration of total oxidizing substance in the electrolytic sulfuric acid is thereby measured immediately.

Method of cleaning an ESC

A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert ...

Substrate processing method and substrate processing apparatus

A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate.

Film removal method and apparatus, and substrate processing system

This invention is concerning a film removal device and method including: A substrate with spreading a film is maintained on a substrate maintenance part 60; A laser source 63 unit by which a laser light is locally irradiated to the alignment mark position 14 of the substrate on this substrate maintenance part, and spreading a film is flaked off from the substrate partially; A fluid supplies mechanism 113-116, 201, 202 by which it provided with a main nozzle 64, 172, 200, which supplies prescribed fluid to the alignment mark position; A collection mechanism 90, which has suck entrance 66a, 171, 193 where prescribed fluid supplied to the alignment mark position, is sucked with a film element, which flakes off on the substrate; A exhaled prescribed fluid is guided from the main nozzle to the alignment mark position. A guide material 65, 170, 191, which guides it to suck entrance of the collection mechanism so that the prescribed fluid and the film element which flakes off be prevented to leak ...

Substrate processing apparatus

The present invention provides a substrate treatment apparatus by which the influence of a treatment unit for carrying out prescribed treatment is reliably removed from a substrate which does not require the prescribed treatment. As the carrying paths of the substrate, the substrate treatment apparatus 1 is provided with a main carrying path MTR via an etching unit 50 and a peeling unit 51, a sub carrying path STR1 (conveyer 30) by-passing the etching unit 50, and a sub carrying path STR2 (buffer 41) by-passing the peeling unit 51. In addition, the substrate treatment apparatus 1 is provided with a carrying robot 20 or 22 for receiving and delivering the substrate between the main carrying path MTR and the sub carrying paths STR1 and STR2. For example, the substrate which is not to be etched is by-passed to carry the etching unit 50 by selecting the sub carrying path STR1 by a control unit 80 and carrying the substrate to the conveyer 30 by the carrying robot 20.

Proximity head heating method and apparatus

Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Substrate support and baffle apparatus

A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

CLEANING FLUID FOR SEMICONDUCTOR, AND CLEANING METHOD USING SAME

Semiconductor-substrate processing apparatus, method of stripping a photoresist, and method of manufacturing a semiconductor device

Cleaning Cylinder Apparatus

A novel cleaning tool is provided. A net-like carrier is twined on an inner cylinder. Protrusions of the inner cylinder are butted again a cleaning unit. With the net-like carrier and the protrusions, a bond between the cleaning unit and the inner cylinder is enhanced to strengthen the whole structure. Thus, stability of high-speed rotation of the cleaning unit is further improved to avoid separating the cleaning unit and the inner cylinder.

Brush box module for chemical mechanical polishing cleaner

Embodiments of the invention generally relate to a method and apparatus for cleaning a substrate. Particularly, embodiments of the invention relate to an apparatus and method for cleaning a substrate using a scrub brush. One embodiment provides a brush box assembly for cleaning a substrate. The assembly comprises a chamber body having a cleaning chamber disposed therein, a rotatable chuck disposed in the cleaning chamber, and an edge cleaner module positioned adjacent the chuck.

Method and apparatus for showerhead cleaning

Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Semiconductor equipment

Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

Substrate cleaning method

A substrate cleaning method can prevent corrosion of copper interconnects even when the cleaning method, which uses two-fluid jet cleaning, is used for cleaning of a surface of a substrate after polishing. The substrate cleaning method includes: carrying out primary cleaning of a surface of a substrate by scrub cleaning using a neutral or alkaline liquid chemical as a cleaning liquid; carrying out finish cleaning of the surface of the substrate by two-fluid jet cleaning which cleans the surface of the substrate in a non-contact manner by jetting carbonated water, comprising pure water or ultrapure water containing dissolved CO 2 gas, from a two-fluid nozzle toward the surface of the substrate; and subsequently carrying out final finish cleaning of the surface of the substrate by scrub cleaning using a neutral or alkaline liquid chemical as a cleaning liquid, and then drying the surface of the substrate.

Devices, Systems, and Methods for Carbonation of Deionized Water

Devices, systems, and methods employed in wet cleaning semiconductor devices are provided. In particular, systems that can deliver deionized water with the desired concentration of CO2 and methods of generating deionized water with a desired concentration of CO2 for use in wet cleaning of semiconductor devices are provided.

Substrate cleaning apparatus, substrate cleaning system, substrate cleaning method and memory medium

An apparatus for cleaning a substrate includes a cleaning chamber which accommodates a substrate inside the cleaning chamber, a treatment solution supply device which supplies a treatment solution having a volatile component and capable of solidifying or being cured to form a treatment film through vaporization of the volatile component, and a removal solution supply device which supplies a removal solution capable of removing the treatment film formed on a surface of the substrate. The treatment solution supply device supplies the treatment solution on the surface of the substrate set inside the cleaning chamber, and the removal solution supply device supplies the removal solution onto the treatment film formed on the surface of the substrate.

CLEANING SOLUTION PRODUCING APPARATUS, CLEANING SOLUTION PRODUCING METHOD, AND SUBSTRATE CLEANING APPARATUS

An cleaning solution producing apparatus according to an embodiment includes: a mixing unit configured to produce a liquid mixture by mixing a hydrogen peroxide solution into an acidic or alkaline liquid, and to raise the pressure of the produced liquid mixture by use of an oxygen gas produced through the decomposition of the hydrogen peroxide solution, or by use of vapor produced by heat of the reaction; and a bubble producing unit configured to produce multiple fine bubbles in the liquid mixture by releasing the pressure of the liquid mixture which is raised by the mixing unit. 1. A cleaning solution producing apparatus comprising:a mixing unit configured to produce a liquid mixture by mixing a hydrogen peroxide solution into any one of an acidic liquid and an alkaline liquid, and to raise a pressure of the produced liquid mixture by use of an oxygen gas produced through decomposition of the hydrogen peroxide solution, or by use of vapor produced by heat of the reaction; anda bubble producing unit configured to produce a plurality of fine bubbles in the liquid mixture by releasing the pressure of the liquid mixture raised by the mixing unit.2. The cleaning solution producing apparatus of claim 1 ,further comprising a heating unit configured to heat the liquid,wherein the mixing unit mixes the hydrogen peroxide solution and the liquid heated by the heating unit.3. The cleaning solution producing apparatus of claim 1 , further comprising:a first pressure-feeder configured to pressure-feed the liquid to the mixing unit; anda second pressure feeder configured to pressure-feed the hydrogen peroxide solution to the mixing unit,wherein the mixing unit is a mixing pipe configured to mix the liquid pressure-fed by the first pressure feeder and the hydrogen peroxide solution pressure-fed by the second pressure feeder.4. The cleaning solution producing apparatus of claim 2 , further comprising:a first pressure-feeder configured to pressure-feed the liquid to the mixing unit; ...

Surface Treatment in a Chemical Mechanical Process

A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM

Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate. 1. A substrate processing apparatus comprising:a substrate holder that holds a peripheral portion of a substrate;a rotator that includes a plate provided with the substrate holder and rotates the substrate by rotating the plate;a fluid supply that is disposed at a center of the rotator and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holder; anda controller that performs an overall control of the substrate processing apparatus, the controller configured to:first supply the processing liquid to the lower surface of the substrate while rotating the substrate thereby performing a liquid processing on the lower surface of the substrate,second supply the inert gas at a first supply flow rate in a state where a liquid film covers the lower surface of the substrate including a central portion of the lower surface of the substrate, andafter the second supply, third supply the inert gas at a second supply flow rate lower than the first supply flow rate,wherein the inert gas is supplied at the second supply flow rate in the third supply when a dry core, surrounded by the liquid film covering the lower surface of the substrate, is formed at the central ...

SEMICONDUCTOR WAFER AND METHOD OF WAFER THINNING

A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer removes a portion of the base material. The grinder is removed from or lifted off the surface of the semiconductor wafer during a separation phase. The surface of the semiconductor wafer and under the grinder is rinsed during the grinding phase and separation phase to remove particles. A rinsing solution is dispensed from a rinsing solution source to rinse the surface of the semiconductor wafer. The rinsing solution source can move in position while dispensing the rinsing solution to rinse the surface of the semiconductor wafer. The grinding phase and separation phase are repeated during the entire grinding operation, when grinding conductive TSVs, or during the final grinding stages, until the final thickness of the semiconductor wafer is achieved. 1. A method of thinning a semiconductor wafer , the method comprising:providing a semiconductor wafer including a base material;grinding a surface of the semiconductor wafer during a grinding phase using a grinder to remove a portion of the base material; andlifting the grinder off the surface of the semiconductor wafer only in a z axis during a separation phase.2. The method of claim 1 , further including repeating the grinding phase and separation phase.3. The method of claim 1 , further including rinsing the surface of the semiconductor wafer during the grinding phase and separation phase to remove the particles.4. The method of claim 3 , wherein the rinsing is continuous.5. The method of claim 3 , wherein the rinsing is pulsed.6. The method of claim 1 , further including reversing movement of the grinder during the separation phase.7. A method of thinning a semiconductor wafer claim 1 , the method comprising:performing a grinding phase on a surface of a semiconductor wafer using a grinder; andseparating the grinder from the surface of the semiconductor wafer only ...

POST-CMP CLEANING APPARATUS AND METHOD WITH BRUSH SELF-CLEANING FUNCTION

Apparatuses and methods for performing a post-CMP cleaning are provided. The apparatus includes a chamber configured to receive a wafer in need of having CMP residue removed. The apparatus also includes a spray unit configured to apply a first cleaning solution to at least one surface of the wafer. The apparatus further includes a brush cleaner configured to scrub the at least one surface of the wafer. In addition, the apparatus includes at least one inner tank disposed in the chamber for storing a second cleaning solution that is used to clean the brush cleaner. 1. An apparatus for performing a post Chemical Mechanical Polish (CMP) cleaning , the apparatus comprising:a chamber configured to receive a wafer in need of having CMP residue removed;a spray unit configured to apply a first cleaning solution to at least one surface of the wafer;a brush cleaner configured to scrub the at least one surface of the wafer; andat least one inner tank disposed in the chamber for storing a second cleaning solution that is used to clean the brush cleaner;wherein the at least one inner tank comprises an inner compartment and an outer compartment, wherein the inner compartment is configured to store the second cleaning solution and receive the brush cleaner, and the outer compartment is configured to receive the second cleaning solution overflowing from the inner compartment.2. The apparatus as claimed in claim 1 , wherein the brush cleaner is configured to be moved between a first position and a second position claim 1 , wherein the brush cleaner scrubs the at least one surface of the wafer at the first position claim 1 , and the brush cleaner is submerged into the second cleaning solution in the at least one inner tank at the second position.3. The apparatus as claimed in claim 1 , further comprising a liquid delivery unit configured to supply the second cleaning solution into the at least one inner tank.4. The apparatus as claimed in claim 3 , wherein the liquid delivery unit ...

APPARATUS FOR TREATING SUBSTRATES USING SUPERCRITICAL FLUIDS, SUBSTRATE TREATMENT SYSTEM INCLUDING THE SAME AND METHOD OF TREATING SUBSTRATES USING THE SAME

Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which the supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller. 1. An apparatus for treating substrates , the apparatus comprising:a process chamber to treat the substrates using a supercritical fluid;a supply module to supply the supercritical fluid into the process chamber, the supply module having an inlet valve through which the supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator to turbulently supplement the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure;a pressure drop module to drop the inner pressure of the process chamber to a second pressure below the first pressure by partially removing a supercritical mixture of the supercritical fluid and chemicals that separated from the substrate from the process chamber until the inner pressure of the process chamber is dropped to the second pressure from the first pressure; anda flow controller alternately repeating a pressure drop mode and a supplemental mode, the supercritical mixture partially flowing out from the process chamber when the inner pressure reaches the first pressure by the pressure drop module in the pressure drop mode, and the supercritical fluid turbulently flowing ...

COPPER CORROSION INHIBITION SYSTEM

There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP). 1. A metal corrosion inhibition cleaning composition comprising:1) 0.1 wt % to 5 wt % of at least one multi-functional acid;2) 0.0 to 30 wt % of at least one multi-functional amine; 'optionally', '3) remaining is substantially liquid carrier; and'}4) fluoride source;5) base;6) metal chelating agent;7) surfactant;8) stabilizer;9) corrosion inhibitor; and10) buffering agent;whereinthe multi-functional amine is an amine or a polyamine that has more than one amino groups in one molecule;the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule; andthe liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof.2. The metal corrosion inhibition cleaning composition of claims 1 , wherein the multi-functional amine is selected from the group consisting of polyethylenimine claims 1 , triamine claims 1 , pentamine claims 1 , hexamine claims 1 , and combinations thereof.3. The metal corrosion inhibition cleaning composition of claims 1 , wherein the multi-functional acid is selected from the group consisting of (i) dicarboxylate acid claims 1 , dicarboxylic acid with aromatic moieties claims 1 , and combinations thereof; (ii) tricarboxylic acid claims 1 , ...

Jig and installation method using same jig

A vacuum hole for suction holding a processing target object through vacuum is formed on a stage surface of a vacuum suction holding stage, and a hole corresponding to the vacuum hole is formed on an elastic pad. A jig includes a first projecting portion configured to be insertable into the vacuum hole on the vacuum suction holding stage, a support portion configured to come into contact with the stage surface with the first projecting portion inserted in the vacuum hole, and a second projecting portion projecting toward an opposite side to the first projecting portion with respect to the support portion and configured to be insertable into the hole on the elastic pad.

CLEANING SYSTEM FOR SEMICONDUCTOR STORAGE SHELF

A cleanup system for the semiconductor storage shelf is provided. A semiconductor storage shelf is provided with a plurality of stalls. The cleanup system for the semiconductor storage shelf includes a conveying device and a cleanup device. The cleanup device is configured to clean up each stall of the semiconductor storage shelf. The cleanup device is detachably connected to the conveying device. The conveying device is configured to convey the cleanup device to each stall of the semiconductor storage shelf. 1. A cleaning system for a semiconductor storage shelf , the semiconductor storage shelf being provided with a plurality of stalls , the cleanup system for the semiconductor storage shelf comprising:a conveying device; anda cleanup device, configured to clean up each stall of the semiconductor storage shelf, wherein the cleanup device is detachably connected to the conveying device, and the conveying device is configured to convey the cleanup device to each stall of the semiconductor storage shelf.2. The cleanup system for the semiconductor storage shelf according to claim 1 , wherein the conveying device comprises a conveying arm claim 1 , a carrying platform for carrying the cleanup device is arranged at an end of the conveying arm claim 1 , and the carrying platform is detachably connected to the cleanup device.3. The cleanup system for the semiconductor storage shelf according to claim 1 , wherein the cleanup device is provided with a switching device claim 1 , the switching device is configured to trigger a periodical start of the cleanup device after the cleanup device is conveyed to the stall claim 1 , to clean up the stall.4. The cleanup system for the semiconductor storage shelf according to claim 3 , wherein the switching device is a pressure sensor.5. The cleanup system for the semiconductor storage shelf according to claim 1 , wherein the cleanup device comprises a cleaning device and a moving device connected to the cleaning device to drive the ...

SUBSTRATE PROCESSING APPARATUS AND PROCESSING METHOD

A polishing apparatus is provided. The polishing apparatus includes: 1. A processing method comprising:a polishing step of polishing a substrate by moving the substrate relatively to a polishing tool while keeping the substrate in contact with the polishing tool;a cleaning step of cleaning the substrate;a buff processing step of performing a buff process to the substrate;a first transfer step in which a first transfer robot transfers a substrate before polishing to perform the polishing step and/or transfers a substrate after the polishing step to the cleaning step or the buff processing step; anda second transfer step in which a second transfer robot that is different from the first transfer robot transfers the substrate between the cleaning step and the buff processing step, and the second transfer step being different from the first transfer step, the second transfer robot being not used in the first transfer step.2. The processing method according to claim 1 , whereinthe second transfer step is performed by the second transfer robot in a transfer chamber that is placed between a cleaning chamber including a cleaning module performing the cleaning step inside and a buff processing chamber including a buff processing module performing the buff processing step inside.3. The processing method according to claim 2 , whereina pressure in the transfer chamber is higher than a pressure in the buff processing chamber.4. The processing method according to claim 2 , whereinthe buff processing step is performed by two buff processing modules placed in an up-and-down direction in the buff processing chamber.5. The processing method according to claim 1 , wherein a buff table holding the substrate with a processing surface of the substrate turned up,', 'a buff member having a smaller diameter than the substrate and coming into contact with the substrate to perform a buff process to the substrate, and', 'a buff head that holds the buff member, and, 'the buff processing step is ...

SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD

A substrate cleaning device includes: a pressing member that cleans a substrate by contacting the substrate; a load measurement unit that measures a pressing load of the cleaning member; and a control unit that repeats an operation of comparing the measurement value of the load measurement unit with the setting load, changing the pressing amount of the cleaning member by a first movement amount so that a difference value decreases, when the difference value is larger than a first threshold value and equal to or smaller than a second threshold value, and changing the pressing amount of the cleaning member by a second movement amount larger than the first movement amount so that the difference value decreases, when the difference value is larger than the second threshold value, until the difference value becomes equal to or smaller than the first threshold value. 1. A substrate cleaning device comprising:a cleaning member configured to clean a substrate by contacting the substrate;a member rotation unit configured to rotate the cleaning member;a member drive unit configured to press the cleaning member against the substrate;a load measurement unit configured to measure a pressing load of the cleaning member; anda control unit configured to control a pressing amount of the cleaning member by the member drive unit, on the basis of a measurement value of the load measurement unit, so that the pressing load of the cleaning member becomes a setting load, whereinthe control unit repeats an operation of comparing the measurement value of the load measurement unit with the setting load, changing the pressing amount of the cleaning member by a first movement amount so that a difference value decreases, when the difference value is larger than a first threshold value and equal to or smaller than a second threshold value, and changing the pressing amount of the cleaning member by a second movement amount larger than the first movement amount so that the difference value ...

SUBSTRATE LIQUID PROCESSING APPARATUS AND METHOD, AND COMPUTER-REDABLE STORAGE MEDIUM STORED WITH SUBSTRATE LIQUID PROCESSING PROGRAM

Disclosed a substrate liquid processing apparatus including: a liquid processing section configured to process a substrate with a processing liquid; a processing liquid supply section configured to supply the processing liquid; a diluent supply section configured to supply a diluent for diluting the processing liquid; a controller configured to control the diluent supply section; a concentration detection unit configured to detect a concentration of the processing liquid; and an atmospheric pressure detection unit configured to detect an atmospheric pressure. The controller acquires the concentration of the processing liquid from the concentration detection unit and the atmospheric pressure from the atmospheric pressure detection unit, controls an amount of the diluent supplied from the diluent supply section such that the acquired concentration of the processing liquid becomes a previously set concentration (“set concentration”), and corrects the set concentration according to, the acquired atmospheric pressure. 1. A substrate liquid processing method comprising:detecting a concentration of a processing liquid for processing a substrate and an atmospheric pressure;diluting the processing liquid such that the detected concentration of the processing liquid becomes a previously set concentration (“set concentration”) so as to process the substrate; andcorrecting the set concentration according to the detected atmospheric pressure.2. The substrate liquid processing method of claim 1 , further comprising:boiling the processing liquid to a predetermined temperature so as to supply the processing liquid to the substrate at a concentration at the predetermined temperature and to process the substrate; andsetting the set concentration as the concentration at the predetermined temperature under a previously set atmospheric pressure.3. The substrate liquid processing method of claim 2 , further comprising:correcting the set concentration to a concentration of the processing ...

Polishing apparatus

A polishing apparatus which can remove slurry which has entered into a gap between an elastic membrane for pressing a substrate such as a wafer and a retaining ring is disclosed. The polishing apparatus includes a top ring which has an elastic membrane configured to form a pressure chamber for pressing the substrate against a polishing pad, and a retaining ring disposed around the elastic membrane and configured to press the polishing pad, a top ring rotating device configured to rotate the top ring about an axis of the top ring, and a cleaning brush configured to be brought into contact with a peripheral portion of a lower surface and an outer circumferential surface of the elastic membrane.

Substrate cleaning apparatus, substrate cleaning method, and computer-readable storage medium

A substrate cleaning apparatus for cleaning a substrate back surface includes a first substrate supporting portion supporting the substrate at a first area of the substrate back surface, the back surface facing down; a second substrate supporting portion supporting the substrate at a second area of the substrate back surface, the second area being separated from the first area; a cleaning liquid supplying portion supplying cleaning liquid to the substrate back surface; a drying portion drying the second area of the substrate back surface; and a cleaning portion cleaning a third area of the substrate back surface when the substrate is supported by the first substrate supporting portion, the third area including the second area, and cleaning a fourth area of the substrate back surface when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area.

SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS

According to one embodiment, a substrate treatment method of removing an upper end of a protrusion on a substrate is disclosed. An unevenness is formed on a surface of the substrate. The method can supply a first liquid on the surface of the substrate. The unevenness is formed on the surface. The method can form a protective layer. The protective layer covers the surface of the substrate from the first liquid supplied to the surface of the substrate. The method can supply a second liquid onto the protective layer. In addition the method can physically remove the protective layer which is on the upper end of the protrusion, and can bring the second liquid into contact with the upper end of the protrusion. The protective layer is removed from the upper end of the protrusion. 1. A substrate treatment method of removing an upper end of a protrusion on a substrate , an unevenness being formed on a surface of the substrate , the method comprising:supplying a first liquid on the surface of the substrate, the unevenness being formed on the surface;forming a protective layer, the protective layer covering the surface of the substrate from the first liquid supplied to the surface of the substrate;supplying a second liquid onto the protective layer; andphysically removing the protective layer, the protective layer being on the upper end of the protrusion, and bringing the second liquid into contact with the upper end of the protrusion, the protective layer being removed from the upper end of the protrusion.2. The method according to claim 1 , whereinthe upper end of the protrusion is a layer including at least any one of a metal or a metal oxide, andthe metal oxide is a oxide of the metal.3. The method according to claim 1 , whereinthe first liquid includes a vaporizable rust inhibitor.4. The method according to claim 3 , whereinthe vaporizable rust inhibitor is at least one selected from the group consisting of Benzo triazole, Tolyl triazole (Methyl benzotriazole), ...

SUBSTRATE CLEANING DEVICE, SUBSTRATE CLEANING APPARATUS, CLEANED SUBSTRATE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate cleaning device includes a substrate holding unit configured to hold a substrate W, a first cleaning unit having a first cleaning member caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit to clean the first surface WA, a second cleaning unit having a second cleaning member caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit to clean the first surface WA, and a controller configured to control the first and second cleaning units so that, when any one of the first cleaning member and the second cleaning member cleans the first surface WA of the substrate W held by the substrate holding unit , the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 1. A substrate cleaning device comprising:a substrate holding unit configured to hold a substrate, the substrate having a first surface and a second surface, the second surface opposite to the first surface;a first cleaning unit having a first cleaning member, the first cleaning member caused to come into contact with the first surface of the substrate held by the substrate holding unit to clean the first surface;a second cleaning unit having a second cleaning member, the second cleaning member caused to come into contact with the first surface of the substrate held by the substrate holding unit to clean the first surface; anda controller configured to control the first cleaning unit and the second cleaning unit so that, when any one of the first cleaning member and the second cleaning member cleans the first surface of the substrate held by the substrate holding unit, the other cleaning member is at a position apart from the substrate held by the substrate holding unit.2. The substrate cleaning device according to claim 1 , further comprising:a pre-cleaning unit configured to clean the first cleaning member and the second cleaning member before being ...

Substrate processing method

A substrate processing method for a substrate having a photosensitive film on a top surface thereof, includes cleaning a back surface of the substrate after the formation of the photosensitive film and before exposure processing; transporting the substrate to a temperature adjuster such as a cooling unit, while holding the substrate with a first holder; adjusting a temperature of the substrate with the temperature adjuster; transporting the substrate from the temperature adjuster to the exposure device with a second holder; and transporting the substrate after the exposure processing to a first platform while holding the substrate with a third holder.

SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND PROGRAM RECORDING MEDIUM

A substrate processing apparatus performs brush cleaning of a substrate. The substrate processing apparatus includes a spin base provided rotatably about a rotation axis, a spin base rotation mechanism that rotates the spin base, and a plurality of first chuck pins provided in the spin base, the first chuck pins being switchable between an opened state and a closed state and capable of clamping an end portion of the substrate from a side surface thereof in the closed state. An upper surface of each of the plurality of first chuck pins has a height the same as or lower than an upper surface of the substrate in the closed state where the end portion of the substrate is clamped. 1. A substrate processing apparatus that performs brush cleaning of a substrate , comprising:a spin base provided rotatably about a rotation axis;a spin base rotation mechanism that rotates the spin base; anda plurality of first chuck pins provided in the spin base, the first chuck pins being switchable between an opened state and a closed state and capable of clamping an end portion of the substrate from a side surface thereof in the closed state, whereinan upper surface of each of the plurality of first chuck pins has a height the same as or lower than an upper surface of the substrate in the closed state in which the end portion of the substrate is clamped.2. The substrate processing apparatus according to claim 1 , further comprising:a plurality of second chuck pins provided in the spin base, the second chuck pins being switchable between an opened state and a closed state and capable of clamping an end portion of the substrate from a side surface thereof in the closed state, whereinan upper surface of each of the plurality of second chuck pins has a height higher than the upper surface of the substrate in the closed state in which the end portion of the substrate is clamped.3. The substrate processing apparatus according to -er- claim 1 , whereineach of the first chuck pins has an abutting ...

Wiping device and stack manufacturing apparatus

An object is to eliminate a harmful effect when a film is bonded by wiping an adhering sealant ( 30 a ). Characterized is a wiping device ( 200 ) including a stage ( 230 ) that supports a sheet-like member ( 220 ), a wiping means ( 210 ) that wipes an adhering object ( 30 a ) adhering on a peripheral portion of the sheet-like member ( 220 ), a wiping cloth ( 241 ) that is attachably and detachably provided for the wiping means ( 210 ), and a solvent ( 261 ) that adheres to the wiping cloth ( 241 ), in which the wiping means ( 210 ) is provided with the wiping cloth ( 241 ), makes the solvent ( 261 ) adhere to the wiping cloth ( 241 ), and wipes the adhering object ( 30 a ), or a stack manufacturing apparatus ( 1000 ) including such a wiping device ( 200 ).

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD USING THE SAME

A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate. 1. A substrate cleaning apparatus , comprising:a support inside a chamber, the support to hold a substrate; a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray a mixture of a polymer and a volatile organic solvent onto a first surface of the substrate to form a coating film, and', 'a second nozzle along a second direction that is at an oblique angle with respect to the first direction, the second nozzle facing an outermost edge of the upper surface of the support to inject a hot gas toward the coating film to volatilize the volatile organic solvent in the coating film;, 'a first supply source inside the chamber, the first supply source includinga second supply source inside the chamber and having a third nozzle facing the upper surface of the support, the second supply source to inject a peeling treatment liquid to the coating film to peel off the coating film from the substrate; anda third supply source inside the chamber and facing a lower surface of the support, the lower surface being opposite the upper surface, and the third supply source to inject the hot gas to a second surface of the substrate to ...

Substrate cleaning apparatus and substrate cleaning method

A substrate cleaning apparatus includes a substrate holding mechanism holding the substrate, a rotation mechanism rotating the substrate held by the substrate holding mechanism, and a cleaning mechanism cleaning the substrate. The cleaning mechanism includes a support column, an arm extending from the support column and having a fixed height position, a cleaning tool supported by the arm and cleaning a surface of the substrate by contacting the surface, a lift mechanism moving the cleaning tool vertically with respect to the arm between an raised position separated from the substrate and a lowered position in contact with the substrate, and a controller controlling at least a speed at which the cleaning tool descends.

Mechanisms for cleaning wafer and scrubber

Embodiments of mechanisms for cleaning a wafer are provided. A method for cleaning a wafer includes cleaning a wafer by using a wafer scrubber and cleaning the wafer scrubber in a scrubber cleaning module. An agitated cleaning liquid is applied on the wafer scrubber to clean the wafer scrubber. The method also includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning liquid.

Double sided buff module for post cmp cleaning

A buff module and method for using the same are provided. In one embodiment, a buff module includes housing having an interior volume, a plurality of drive rollers and a pair of buff heads. The drive rollers are arranged to rotate a substrate within the interior volume on a substantially horizontal axis. The buff heads are disposed in the housing, each buff head rotatable on an axis substantially aligned with the horizontal axis and movable to a position substantially parallel with the horizontal axis.

SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING METHOD, AND STORAGE MEDIUM

There are provided first and second cleaning members which are configured to clean a central zone in a rear surface of a wafer when the wafer held by an absorption pad is horizontally held, and configured to clean a peripheral zone in the rear surface of the wafer when the wafer is held by the spin chuck. Due to the provision of the first and second cleaning members, detergency can be improved as compared with a case in which only one cleaning member is used. The first and second cleaning members are configured to be horizontally turned by a common turning shaft. When the central zone in the rear surface of the wafer is cleaned, the turning shaft is located to be overlapped with the wafer. Since the turning shaft is located by using the moving area of the wafer, a size of an apparatus can be reduced. 1. A substrate cleaning apparatus configured to clean a rear surface of a circular substrate , comprising:a first absorbing and holding unit configured to be horizontally movable while horizontally absorbing and holding a zone that does not overlap with a central portion in the rear surface of the substrate;a second absorbing and holding unit configured to be rotated about a vertical axis while horizontally absorbing and holding the central portion in the rear surface of the substrate;a first cleaning member and a second cleaning member that are laterally spaced apart from each other, the first cleaning member and the second cleaning member being configured to be in contact with the zone including the central portion in the rear surface of the substrate so as to clean the same, when the substrate is held by the first absorbing and holding unit, and being configured to be in contact with a zone other than the central portion in the rear surface of the substrate so as to clean the same, when the substrate is held by the second absorbing and holding unit;a turning mechanism configured to horizontally turn the first cleaning member and the second cleaning member by a common ...

Substrate treating apparatus

Disclosed is a substrate treating apparatus that treats a substrate with processing liquids. The apparatus includes a substrate holder, an exterior cup, and an interior cup. The interior cup includes an interior cup body, and an interior cup outlet. The exterior cup includes an exterior cup body, an exterior bottom cup, a first drain outlet, a first exhaust port, a second drain outlet, a second exhaust port, and a separation partition. The apparatus further includes an annular member movable upwardly/downwardly, and a drive unit that causes the annular member to move to shift the interior cup body between a collecting position and a retracting position.

BRUSH CLEANING APPARATUS, CHEMICAL-MECHANICAL POLISHING (CMP) SYSTEM AND WAFER PROCESSING METHOD

The present disclosure, in some embodiments, relates to a brush cleaning apparatus. The brush cleaning apparatus includes a wafer support configured to support a wafer. The brush cleaning apparatus also includes a cleaning brush including a porous material coupled to a core material. An uppermost surface of the porous material defines a planar cleaning surface. A first nozzle is configured to apply a first cleaning liquid directly between the wafer and the planar cleaning surface of the cleaning brush. 1. A brush cleaning apparatus , comprising:a wafer support configured to support a wafer;a cleaning brush comprising a porous material coupled to a core material, wherein an uppermost surface of the porous material defines a planar cleaning surface; anda first nozzle configured to apply a first cleaning liquid directly between the wafer and the planar cleaning surface of the cleaning brush.2. The brush cleaning apparatus of claim 1 , wherein the core material has interior sidewalls defining a plurality of holes extending completely through the core material.3. The brush cleaning apparatus of claim 2 , further comprising:a second nozzle configured to apply a second cleaning liquid directly onto an outer surface of the core material facing away from porous material.4. The brush cleaning apparatus of claim 2 , wherein the plurality of holes are arranged within a plurality of circular patterns surrounding a center of the core material claim 2 , the plurality of holes are separated by smaller distances within respective ones of the plurality of circular patterns than between adjacent ones of the plurality of circular patterns.5. The brush cleaning apparatus of claim 2 , wherein the plurality of holes are arranged along a plurality of lines claim 2 , the plurality of holes are separated by smaller distances within the plurality of lines than between adjacent ones of the plurality of lines.6. The brush cleaning apparatus of claim 5 , wherein the plurality of lines are ...

Substrate cleaning apparatus and substrate cleaning method

A substrate cleaning apparatus performs scrub cleaning of a surface of a substrate with an elongated cylindrical roll cleaning member. The substrate cleaning apparatus includes a roll holder for supporting the cleaning member and rotate the roll cleaning member, a vertical movement mechanism for vertically moving the roll holder so that the roll cleaning member applies a roll load to the substrate at the time of cleaning the substrate by actuation of an actuator having a regulating device, a load cell for measuring the roll load, and a controller for performing feedback control of the roll load through the regulating device based on the measured value of the load cell. The substrate cleaning apparatus further includes a monitor unit for monitoring whether an operation amount of the regulating device falls outside an allowable range of a preset reference value of an operation amount corresponding to a preset roll load.

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD

A substrate cleaning apparatus capable of quickly removing cleaning liquid that has been used in cleaning of a substrate with a roll cleaning tool from the substrate. The substrate cleaning apparatus includes a substrate holder configured to hold and rotate a substrate; a cleaning-liquid supply nozzle configured to supply cleaning liquid onto a first region of the substrate; a roll cleaning tool configured to be placed in sliding contact with the substrate in the presence of the cleaning liquid to thereby clean the substrate; and a fluid supply nozzle configured to supply fluid, which is constituted by pure water or chemical liquid, onto a second region of the substrate. The second region is located at an opposite side of the first region with respect to the roll cleaning tool, and a supply direction of the fluid is a direction from a central side toward a peripheral side of the substrate. 1. A substrate cleaning apparatus , comprising:a substrate holder configured to hold and rotate a substrate;a cleaning-liquid supply nozzle configured to supply cleaning liquid onto a first region of the substrate;a roll cleaning tool configured to be placed in sliding contact with the substrate in the presence of the cleaning liquid to thereby clean the substrate; anda fluid supply nozzle configured to supply fluid, which is constituted by pure water or chemical liquid, onto a second region of the substrate,wherein the second region is located at an opposite side of the first region with respect to the roll cleaning tool, and a supply direction of the fluid is a direction from a central side toward a peripheral side of the substrate.2. The substrate cleaning apparatus according to claim 1 , wherein the second region is a region downstream of the roll cleaning tool with respect to a rotational direction of the substrate.3. The substrate cleaning apparatus according to claim 1 , wherein the supply direction of the fluid is a direction from the central side toward the peripheral ...

ROLL-TYPE PROCESSING MEMBER, PENCIL-TYPE PROCESSING MEMBER, AND SUBSTRATE PROCESSING APPARATUS INCLUDING ANY ONE OF THESE

A roll-type cleaning member for scrubbing and cleaning a target cleaning surface of a substrate includes a plurality of nodules formed on a surface thereof. Each nodule includes a slit which extends so as not to be parallel to the rotation direction of the roll-type cleaning member, upstream edges are formed by the slit so as to serve as edges first contacting the target cleaning surface when a cleaning surface of the nodule contacts the target cleaning surface of the substrate by the rotation of the roll-type cleaning member, and the upstream edges are provided at a plurality of positions of the cleaning surface of the nodule in the circumferential direction. 1. A pencil-type processing member for processing a surface of a substrate by scrubbing the surface of the substrate at a bottom surface thereof ,wherein a continuous slit is formed on the bottom surface while not being divided from one edge to the other edge.2. The pencil-type processing member according to claim 1 ,wherein the slit is formed in a linear shape.3. The pencil-type processing member according to claim 1 ,wherein the pencil-type processing member is provided with a plurality of slits having different depths.4. The pencil-type processing member according to claim 1 ,wherein the pencil-type processing member is a pencil-type cleaning member that performs a cleaning treatment on the surface of the substrate, and is formed of soft sponge.5. The pencil-type processing member according to claim 1 ,wherein the pencil-type processing member is a pencil-type buff processing member for performing a buff processing treatment on the surface of the substrate, andwherein the pencil-type buff processing member includes a base portion and a buff processing pad provided at the lower surface of the base portion so as to be used as the bottom surface.6. A substrate processing apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the pencil-type processing member according to ;'}a rotational ...

POLISHING APPARATUS AND POLISHING METHOD

A polishing apparatus is used for polishing a surface of a substrate such as a semiconductor wafer to planarize the surface of the substrate. The polishing apparatus includes a polishing table having a polishing surface, and a top ring configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against the polishing surface. The top ring is movable between a polishing position above the polishing table, a position laterally of the polishing table, and a cleaning position. The polishing apparatus includes a cleaning unit disposed in the cleaning position and configured to eject a cleaning liquid toward the lower surface of the top ring, which is being rotated, thereby cleaning the substrate held by the top ring together with the lower surface of the top ring. 1. A polishing apparatus for polishing a substrate , comprising:a polishing table having a polishing surface;a top ring configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against said polishing surface, said top ring being movable between a polishing position above said polishing table, a position laterally of said polishing table, and a cleaning position; anda cleaning unit disposed in said cleaning position and configured to eject a cleaning liquid toward a lower surface of said top ring, which is being rotated, thereby cleaning the substrate held by said top ring together with the lower surface of said top ring.2. A polishing apparatus according to claim 1 , wherein said position laterally of said polishing table comprises a substrate transfer position laterally of said polishing table claim 1 , and said cleaning position is located between said polishing position and said substrate transfer position.3. A polishing apparatus according to claim 1 , wherein said cleaning unit has a first cleaning nozzle having a plurality of ejection ports ...

De-bonding and Cleaning Process and System

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck. 1. A method comprising:de-bonding a surface of a first substrate from a second substrate, the first substrate being attached to a tape, the tape being attached to a frame, the frame being on a same side of the tape as the first substrate;after de-bonding the first substrate, placing a cover ring over a portion of the tape and over an upper surface of the frame, the cover ring comprising one or more sections arranged around a perimeter of the first substrate; andafter de-bonding, cleaning the surface of the first substrate, wherein during the cleaning the surface, the cover ring covers the tape.2. The method of claim 1 , wherein the cover ring encircles the first substrate.3. The method of claim 1 , wherein cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate.4. The method of claim 3 , wherein the cleaning mechanism comprises a sponge.5. The method of claim 3 , wherein the cleaning mechanism comprises a brush.6. The method of claim 3 , wherein the cleaning the surface of the first substrate comprises applying a fluid to the surface of the first ...

Semiconductor Processing Apparatus And Method

A semiconductor processing apparatus is provided. The apparatus includes a body portion, which includes at least one semiconductor processing unit. Each semiconductor processing unit includes a recess formed on an upper surface of the body portion, wherein a bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity. Each semiconductor processing unit also includes a first channel that connects to the recess at the at least one location, as well as at least one second channel connecting to the recess at the peripheral. Each of the first channel and the at least one second channel serves as an inlet or an outlet via which a fluid enters or exits the recess. 1. A semiconductor processing apparatus , comprising: a recess formed on an upper surface of the body portion, a bottom surface of the recess having at least one location and a peripheral;', 'a first channel connecting to the recess at the at least one location; and', 'at least one second channel connecting to the recess at the peripheral, wherein:', 'the bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity, and', 'each of the first channel and the at least one second channel serves as an inlet or an outlet via which a fluid enters or exits the recess., 'a body portion comprising at least one semiconductor processing unit, each of the at least one semiconductor processing unit comprising2. The semiconductor processing apparatus of claim 1 , wherein the at least one location is located at a center of the bottom surface.3. The semiconductor processing apparatus of claim 2 , wherein the at least one semiconductor processing unit comprises one ...

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

A substrate processing method is provided, which includes: an ozone-containing hydrofluoric acid solution spouting step of spouting an ozone-containing hydrofluoric acid solution containing ozone dissolved therein from a nozzle toward one major surface of a substrate held by a substrate holding unit; and a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into abutment against the one major surface of the substrate, the brush-cleaning step being performed after the ozone-containing hydrofluoric acid solution spouting step or in parallel with the ozone-containing hydrofluoric acid solution spouting step. 1. A substrate processing method comprising:an ozone-containing hydrofluoric acid solution spouting step of spouting an ozone-containing hydrofluoric acid solution containing ozone dissolved therein from a nozzle toward one major surface of a substrate held by a substrate holding unit; anda brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into abutment against the one major surface of the substrate, the brush-cleaning step being performed after the ozone-containing hydrofluoric acid solution spouting step or in parallel with the ozone-containing hydrofluoric acid solution spouting step.2. The substrate processing method according to claim 1 , wherein the brush-cleaning step is performed after the ozone-containing hydrofluoric acid solution spouting step.3. The substrate processing method according to claim 2 , wherein the ozone-containing hydrofluoric acid solution to be spouted from the nozzle in the ozone-containing hydrofluoric acid solution spouting step has a hydrofluoric acid concentration of not lower than 0.01 wt. % and not higher than 0.5 wt. %.4. The substrate processing method according to claim 2 , wherein the ozone-containing hydrofluoric acid solution to be spouted from the nozzle in the ozone-containing hydrofluoric acid solution spouting step has an ...

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate processing method includes a substrate holding step of horizontally holding a substrate having a first major surface and a second major surface at an opposite side of the first major surface, a coating film forming step of supplying a coating agent to the first major surface to form a sublimating coating film which covers the first major surface, and a coating film cleaning step of cleaning a front surface of the coating film. 1. A substrate processing method comprising:a substrate holding step of horizontally holding a substrate having a first major surface and a second major surface at an opposite side of the first major surface;a coating film forming step of supplying a coating agent to the first major surface to form a sublimating coating film which covers the first major surface; anda coating film cleaning step of cleaning a front surface of the coating film.2. The substrate processing method according to claim 1 , further comprising: a second major surface cleaning step of cleaning the second major surface after the end of the coating film forming step; andwherein the coating film cleaning step is started after the end of the second major surface cleaning step or is executed in parallel with the second major surface cleaning step.3. The substrate processing method according to claim 2 , wherein the coating film cleaning step includes a first cleaning step of starting cleaning of the front surface of the coating film after the end of the second major surface cleaning step.4. The substrate processing method according to claim 2 , wherein the coating film cleaning step includes a second cleaning step of cleaning the front surface of the coating film in parallel with the second major surface cleaning step.5. The substrate processing method according to claim 4 , wherein the second cleaning step is ended after the end of the second major surface cleaning step.6. The substrate processing method according to claim 2 , further comprising: a protective ...

Method and Apparatus for Cleaning A Semiconductor Substrate

A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided. 1. A method for cleaning a substrate , comprising method operations of:disposing a fluid layer having solid components therein to a surface of the substrate;creating a shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate, the shear force resulting from one of a normal component or a tangential component of a force applied to a solid body in contact with the fluid layer; andrinsing the surface of the substrate to remove the fluid layer.2. The method of claim 1 , wherein the method operation of creating a shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate includes claim 1 ,forcing one of the solid components toward the surface of the substrate.3. The method of claim 1 , wherein the method operation of creating a shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate includes claim 1 ,thinning a portion of the fluid layer defined between a bottom surface of one of the solid components and a top surface of the substrate.4. The method of claim 1 , further comprising:periodically perturbing the fluid layer causing the shear force to be periodically created.5. The method of claim 1 , wherein the fluid layer includes a fatty acid.6. The method of claim 5 , wherein the fatty acid is carboxylic acid.7. The method of claim 1 , ...

COLLECTION CHAMBER APPARATUS TO SEPARATE MULTIPLE FLUIDS DURING THE SEMICONDUCTOR WAFER PROCESSING CYCLE

The collection chamber apparatus acts to separate multiple fluids during the wafer processing cycle. Round, fluid collection trays surround the round wafer to collect each individual fluid, recycling them for later reuse. The trays move up and down by use of air cylinders and stack into each other to prevent cross contamination of the other fluids. Two opposing pistons (air cylinders) lift the trays in pairs to form fluid collection chambers. Each collection chamber has a unique drain which enters a separation manifold, flowing into separate tanks for later reuse. 1. A wafer processing system including a fluid collection apparatus configured to separate and collect multiple fluids for reuse during wafer processing comprising:a rotatable wafer support member for supporting a wafer;a plurality of collections trays disposed about a peripheral edge of the wafer support member, the collection trays being arranged in a stacked configuration, each collection tray having a track section for collecting fluid and an outlet in fluid communication with the track section for discharging the collected fluid; anda means for selectively moving one or more of the collection trays to an elevated position above the wafer support member so as to define a collection chamber formed between at least two of the collection trays, the collection chamber being configured to collect fluid that is discharged from the wafer during the processing thereof and routes the collected fluid through the outlet of one of the collection trays.2. The wafer processing system of claim 1 , wherein the means comprises at least a first pair of pistons disposed below the collection trays claim 1 , each piston being movable between a retracted position in which all of the collection trays are in intimate contact with one another and an extended position in which at least two collections trays are moved to the elevated position and the collection chamber is formed therebetween.3. The wafer processing system of ...

Removal of Particles on Back Side of Wafer

The present disclosure provides a method of cleaning a semiconductor wafer during a process of fabricating a semiconductor device. The method includes loading a semiconductor wafer into a wafer handling system. The method includes removing contaminant particles from an edge region of the wafer from the back side, wherein alignment marks are located in the edge region. The method includes collecting the removed contaminant particles and discarding the collected contaminant particles out of the wafer handling system. The disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer cleaning device that is operable to clean a predetermined region of the wafer on the back surface thereof. The predetermined region of the wafer at least partially overlaps with one or more alignment marks.

Design of disk/pad clean with wafer and wafer edge/bevel clean module for chemical mechanical polishing

A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and space apart relation, the first pad holder rotatable on a second axis rotatable parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance defined between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, wherein the second pad holder is couple with a rotary arm.

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In one embodiment, a semiconductor manufacturing apparatus includes a wafer retaining module configured to retain a wafer by a chuck pin and to rotate the wafer. The apparatus further includes a wafer cleaning module configured to retain a cleaning member for cleaning a surface of the wafer and to rotate the cleaning member around a first rotation axis that is perpendicular to the surface of the wafer, the wafer cleaning module cleaning the surface of the wafer by moving the cleaning member on the surface of the wafer while the cleaning member contacts the wafer and rotates. The wafer cleaning module retains and rotates the cleaning member so that the first rotation axis does not pass through a contact region of the cleaning member with respect to the wafer. 1. A semiconductor manufacturing apparatus comprising:a wafer retaining module configured to retain a wafer by a chuck pin and to rotate the wafer; anda wafer cleaning module configured to retain a cleaning member for cleaning a surface of the wafer and to rotate the cleaning member around a first rotation axis that is perpendicular to the surface of the wafer, the wafer cleaning module cleaning the surface of the wafer by moving the cleaning member on the surface of the wafer while the cleaning member contacts the wafer and rotates;wherein the wafer cleaning module retains and rotates the cleaning member so that the first rotation axis does not pass through a contact region of the cleaning member with respect to the wafer.2. The apparatus of claim 1 , further comprising a controller configured to control an operation of the wafer cleaning module;wherein the controller sets a first mode in which the cleaning member is rotated by the wafer cleaning module, and a second mode in which rotation of the cleaning member by the wafer cleaning module is stopped so that the cleaning member is rotated by force from outside of the wafer cleaning module.3. The apparatus of claim 2 , wherein the controller sets the wafer ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM WITH PROGRAM STORED THEREIN FOR EXECUTING SUBSTRATE PROCESSING METHOD

The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate. 1. A substrate processing apparatus comprising:a removal processing unit configured to remove an adhered substance from the substrate; anda controller configured to control an operation of the removal processing unit,wherein the removal processing unit comprises:a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of the adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to the substrate;a substrate heating unit configured to heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent and is lower than the boiling point of the removing agent; anda rinsing liquid supplying unit configured to supply a rinsing liquid to the substrate, andwherein the controller controls the processing liquid supplying unit, the substrate heating unit, and the rinsing liquid supplying unit in such a manner that the processing liquid supplying unit supplies the processing liquid to the substrate, the substrate heating unit heats the substrate at the predetermined temperature so as to promote evaporation of the solvent and reaction of the adhered substance with the removing agent, and the rinsing liquid supplying unit supplies the rinsing liquid to the substrate ...

SEMICONDUCTOR WAFER AND METHOD OF WAFER THINNING USING GRINDING PHASE AND SEPARATION PHASE

A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer removes a portion of the base material. The grinder is removed from or lifted off the surface of the semiconductor wafer during a separation phase. The surface of the semiconductor wafer and under the grinder is rinsed during the grinding phase and separation phase to remove particles. A rinsing solution is dispensed from a rinsing solution source to rinse the surface of the semiconductor wafer. The rinsing solution source can move in position while dispensing the rinsing solution to rinse the surface of the semiconductor wafer. The grinding phase and separation phase are repeated during the entire grinding operation, when grinding conductive TSVs, or during the final grinding stages, until the final thickness of the semiconductor wafer is achieved. 1. A method of making a semiconductor device , comprising:providing a semiconductor wafer including a base material;grinding a surface of the semiconductor wafer during a grinding phase using a grinder to remove a portion of the base material;lifting the grinder off the surface of the semiconductor wafer during a separation phase; andrinsing the surface of the semiconductor wafer and under the grinder during the separation phase to remove particles.2. The method of claim 1 , further including repeating the grinding phase and separation phase.3. The method of claim 1 , further including rinsing the surface of the semiconductor wafer during the grinding phase and separation phase to remove the particles.4. The method of claim 1 , further including lifting the grinder 3-10 micrometers off the surface of the semiconductor wafer.5. The method of claim 1 , further including pausing movement of the grinder in the downward direction during the separation phase.6. The method of claim 1 , wherein the semiconductor wafer includes an edge support ring.7. A method of making a ...

SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND PROGRAM RECORDING MEDIUM

A substrate processing apparatus includes a substrate holding rotating mechanism that holds a substrate in a horizontal posture and rotates the substrate about the vertical rotating axis passing through a principal surface of the substrate, a brush to be abutted with the principal surface of the substrate held by the substrate holding rotating mechanism to clean the principal surface of the substrate, a first nozzle that discharges a processing liquid to the principal surface of the substrate held by the substrate holding rotating mechanism, and a second nozzle that discharges the processing liquid to a downstream adjacent region adjacent to an abutment region where the brush is abutted with the principal surface of the substrate from the downstream side of the rotating direction of the substrate on the principal surface of the substrate held by the substrate holding rotating mechanism. 1. A substrate processing apparatus comprising:a substrate holding rotating mechanism that holds a substrate in a horizontal posture and rotates the substrate about a vertical rotating axis passing through a principal surface of the substrate;a first nozzle that discharges a processing liquid to the principal surface of the substrate held by the substrate holding rotating mechanism;a brush to be abutted with the principal surface of the substrate held by the substrate holding rotating mechanism to clean the principal surface of the substrate; anda second nozzle that discharges a processing liquid to a downstream adjacent region adjacent to an abutment region where the brush is abutted with the principal surface of the substrate from a downstream side of a rotating direction of the substrate on the principal surface of the substrate held by the substrate holding rotating mechanism.2. The substrate processing apparatus according to claim 1 , further comprising:a movement mechanism that moves the brush along the principal surface of the substrate held by the substrate holding rotating ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM

Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate. 1. A substrate processing apparatus comprising:a substrate holding member that holds a peripheral portion of a substrate;a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate;a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; anda controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate,wherein the controller controls to supply the inert gas at a first supply flow rate in a state where a liquid film is present at a central portion of the lower surface of the substrate after starting the drying processing, and supply the inert gas at a second supply flow rate lower than the first supply flow rate after the liquid film is no longer present at the central portion of the lower surface.2. The substrate processing apparatus of claim 1 , wherein ...

WAFER TO WAFER BONDING METHOD AND WAFER TO WAFER BONDING SYSTEM

A wafer to wafer bonding method includes performing a plasma process on a bonding surface of a first wafer, pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, and bonding the first wafer to a second wafer. The plasma process has different plasma densities along a circumferential direction about a center of the first wafer. A middle portion of the first wafer protrudes after pressurizing the first wafer. The first wafer is bonded to the second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer. 1. A wafer to wafer bonding method , comprising:performing a plasma process on a bonding surface of a first wafer, the plasma process having different plasma densities along a circumferential direction about a center of the first wafer;pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, wherein a middle portion of the first wafer protrudes after pressurizing the first wafer; andbonding the first wafer to a second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer.2. The method of claim 1 , wherein performing the plasma process comprises:generating a first plasma density in a first crystal orientation of the first wafer; andgenerating a second plasma density greater than the first plasma density in a second crystal orientation of the first wafer.3. The method of claim 2 , wherein the second crystal orientation is oriented to the first crystal orientation at about 45° along the circumferential direction about the center of the first wafer.4. The method of claim 2 , wherein the first wafer has a first Young's modulus in the first crystal orientation and a second Young's modulus in the second crystal orientation.5. The method of claim 2 , wherein the first crystal orientation is ...

Gigasonic Brush for Cleaning Surfaces

An apparatus, system, and method for a Gigasonic Brush for cleaning surfaces is presented. One embodiment of the system includes an array of acoustic transducers coupled to a substrate where the individual acoustic transducers have sizes in the range of 9 um2 to 250,000 um2. The system may include a positioning mechanism coupled to at least one of a target surface or the array of acoustic transducers, and configured to position the array of acoustic transducers within 1 millimeter of a target surface. The system may also include a cleaning liquid supply arranged to provide cleaning liquid for coupling the array of acoustic transducers to the target surface. The system may further include a controller coupled to the array of acoustic transducers and configured to activate the array of acoustic transducers. 1. A method comprising:providing an array of acoustic transducers wherein individual acoustic transducers have sizes in the range of 9 square micrometers to 250,000 square micrometers;positioning the array of acoustic transducers within 1 millimeter of a target surface;coupling the array of acoustic transducers to the target surface via a cleaning liquid; anddirectly exciting a particle having a diameter in the range of 1 nanometer to 500 nanometers on the target surface with acoustic waves at one or more frequencies in the range of 10 Megahertz to 10 Gigahertz from the array of acoustic transducers.2. The method of claim 1 , further comprising focusing the acoustic waves from the array of acoustic transducers on a point.3. The method of claim 1 , further comprising focusing the acoustic waves from the array of acoustic transducers on a line.4. The method of claim 1 , further comprising coupling the array of acoustic transducers to a two dimensional plane.5. The method of claim 1 , where providing an array of acoustic transducers further comprises providing a first group of acoustic transducers configured to operate at a first frequency and providing a second group ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM HAVING STORED THEREON SUBSTRATE PROCESSING PROGRAM

A substrate processing apparatus includes a substrate rotating unit configured to hold and rotate a substrate ; a processing liquid supplying unit configured to supply a processing liquid to the substrate; and a replacement liquid supplying unit configured to supply, to the substrate, a replacement liquid with which the processing liquid supplied from the processing liquid supplying unit is replaced. While the replacement liquid supplying unit supplies the replacement liquid to the substrate, the processing liquid supplying unit supplies the processing liquid to a position on the substrate positioned at an outer peripheral side thereof than a supply position of the replacement liquid to form a liquid film of the processing liquid. It is possible to maintain a state in which the entire surface of the substrate is covered with the liquid film without increasing consumption amount of the replacement liquid. 1. A substrate processing apparatus , comprising:a substrate rotating unit configured to hold and rotate a substrate;a processing liquid supplying unit configured to supply a processing liquid to the substrate; anda replacement liquid supplying unit configured to supply, to the substrate, a replacement liquid with which the processing liquid supplied from the processing liquid supplying unit is replaced,wherein, while the replacement liquid supplying unit supplies the replacement liquid to the substrate, the processing liquid supplying unit supplies the processing liquid to a position on the substrate positioned at an outer peripheral side thereof than a supply position of the replacement liquid supplied from the replacement liquid supplying unit to form a liquid film of the processing liquid.2. The substrate processing apparatus of claim 1 ,wherein the processing liquid supplying unit and the replacement liquid supplying unit respectively supply the processing liquid and the replacement liquid such that an entire surface of the substrate is covered with a liquid ...

Workpiece supporting apparatus and workpiece supporting method

A workpiece supporting apparatus capable of preventing a surface of a workpiece from drying out while maintaining a suction force when supporting the workpiece with a Bernoulli chuck is disclosed. The workpiece supporting apparatus includes a Bernoulli chuck configured to generate a suction force by emitting a gas; and a liquid ejection member surrounding the Bernoulli chuck and configured to discharge a liquid around the Bernoulli chuck.

CLEANING MEMBER, CLEANING APPARATUS, AND CLEANING METHOD

A cleaning member configured to clean a semiconductor substrate by relatively sliding over a surface of the semiconductor substrate is disclosed. The cleaning member includes a holding portion; and a brush portion supported by the holding portion and including an ion exchange resin. 1. A cleaning member configured to clean a semiconductor substrate by relatively sliding over a surface of the semiconductor substrate , the cleaning member comprising:a holding portion; anda brush portion supported by the holding portion and including an ion exchange resin.2. The cleaning member according to claim 1 , wherein the ion exchange resin comprises a strongly basic anion exchange resin or a strongly acidic cation exchange resin.3. The cleaning member according to claim 1 , wherein the ion exchange resin comprises a weakly basic anion exchange resin or a weakly acidic cation exchange resin.4. The cleaning member according to claim 1 , wherein the ion exchange resin comprises a matrix including a copolymer of styrene and divinylbenzene or a copolymer of acrylic acid/methacrylic acid and divinylbenzene.5. The cleaning member according to claim 1 , wherein the brush portion comprises a porous material.6. The cleaning member according to comprising a roll brush claim 1 , wherein the brush portion is shaped like a circular cylinder claim 1 , the brush portion being provided along an outer periphery of the holding portion.7. The cleaning member according to claim 6 , wherein the brush portion is provided with protrusions on an outer peripheral portion thereof.8. The cleaning member according to claim 7 , wherein the protrusions include a tip portion claim 7 , and wherein at least the tip portion comprises a polyvinyl alcohol resin.9. The cleaning member according to comprising a pencil brush claim 1 , wherein the brush portion is shaped like a circular disc.10. The cleaning member according to claim 9 , wherein the brush portion includes an upper layer and a lower layer claim 9 , the ...

Multiple barrier layer encapsulation stack

A process for encapsulating an apparatus to restrict environmental element permeation between the apparatus and an external environment includes applying multiple barrier layers to the apparatus and preceding each layer application with a separate cleaning of the presently-exposed apparatus surface, resulting in an apparatus which includes an encapsulation stack, where the encapsulation stack includes a multi-layer stack of barrier layers. Each separate cleaning removes particles from the presently-exposed apparatus surface, exposing gaps in the barrier layer formed by the particles, and the subsequently-applied barrier layer at least partially fills the gaps, so that a permeation pathway through the encapsulation stack via gap spaces is restricted. The quantity of barrier layers applied to form the stack can be based on a determined probability that a stack of the particular quantity of barrier layers is independent of at least a certain quantity of continuous permeation pathways through the stack.

Cleaning apparatus and cleaning method

According to one embodiment, there is provided a cleaning apparatus including a substrate cleaner and a member cleaner. The substrate cleaner has a substrate cleaning member placed over a first region to be opposite a substrate and a second region different from the first region. The member cleaner is placed adjacent to the second region.

METHOD AND SYSTEM FOR CLEANING COPPER-EXPOSED SUBSTRATE

The water outlet of a subsystem that includes an ultraviolet oxidation device and the water inlet of each substrate treatment device are connected to each other via a main pipe. A hydrogen peroxide removal device is installed between the ultraviolet oxidation device of the subsystem and a non-regenerative ion-exchange device. In addition, a carbon dioxide supply device is installed at the middle of a pipe that branches from the water outlet of the subsystem to reach the substrate treatment device. According to an aspect, the hydrogen peroxide removal device is filled with a platinum-group metal catalyst. Thus, ultrapure water passed through the ultraviolet oxidation device is used as a base to produce carbonated water in which the concentration of hydrogen peroxide dissolved therein is limited to 2 μg/L or less and to which carbon dioxide is added to adjust resistivity to be within the range of 0.03 to 5.0 MΩ·cm. 1. A method for cleaning a copper-exposed substrate , comprising:cleaning the substrate having at least copper or a copper compound exposed on a surface with carbonated water in which concentration of hydrogen peroxide dissolved in water is limited to 2 μg/L or less and to which carbon dioxide is added to adjust resistivity to be within a range of 0.03 to 5.0 MΩ·cm.2. The method for cleaning the copper-exposed substrate according to claim 1 , wherein the carbonated water is obtained as a result of passage through a platinum-group metal catalyst to achieve the concentration of hydrogen peroxide.3. The method for cleaning the copper-exposed substrate according to claim 2 , further comprising adding hydrogen before the passage through the platinum-group metal catalyst.4. The method for cleaning the copper-exposed substrate according to claim 1 , further comprising limiting concentration of dissolved oxygen to 130 μg/L or less.5. The method for cleaning the copper-exposed substrate according to claim 1 , wherein the platinum-group metal catalyst is a palladium ...

Substrate processing apparatus

An embodiment of the present invention provides a buff process module. The buff process module includes: a buff table on which a processing target object is mounted; a buff head that holds a buff pad for applying a predetermined process to the processing target object; a buff arm that supports and swings the buff head; a dresser for dressing the buff pad; and a cleaning mechanism that is disposed between the buff table and the dresser and is for cleaning the buff pad.

System for cleaning wafer in cmp process of semiconductor manufacturing fabrication

A system for performing a Chemical Mechanical Polishing (CMP) process is provided. The system includes a CMP module configured to polish a semiconductor wafer. The system further includes a cleaning brush assembly configured to clean the semiconductor wafer. The cleaning brush includes a rotation shaft and a brush member surrounding a segment of the rotation shaft. The system also includes an agitation transducer arranged to be distant from the brush member and configured to produce an agitated cleaning liquid to clean the cleaning brush assembly.

Substrate processing apparatus, substrate processing method and storage medium

In example embodiments, a supply flow rate of a clean gas can be reduced without decreasing process performance. A flow rate of a clean gas 78 , having a low humidity, supplied from a clean gas supply device 70 or 78 when a drying process is performed on a substrate is set to be smaller than a flow rate of a clean gas 70 supplied from the clean gas supply device 70 or 78 into an internal space within a housing 60 when a liquid process is performed onto the substrate W, and a flow rate of a gas exhausted through the housing exhaust path when the drying process is performed is set to be smaller than a flow rate of a gas exhausted through the housing exhaust path 64 when the liquid process is performed.

SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus includes a rotary cup that is provided at a substrate holding unit to surround a substrate held thereon and to be rotated along with the substrate holding unit, and configured to guide a processing liquid dispersed from the substrate; and an outer cup that is provided around the rotary cup with a gap therebetween and configured to collect the guided processing liquid by the rotary cup. Further, a height of an upper end of the rotary cup is higher than that of the outer cup. Furthermore, an outward protrusion protruded outwards in a radial direction thereof and extended along a circumference thereof is provided at an upper end portion of an outer surface of the rotary cup, and the outward protrusion blocks mist of the processing liquid dispersed from the gap between the rotary cup and the outer cup toward a space above the substrate. 1. A substrate processing apparatus , comprising:a substrate holding unit configured to hold thereon a substrate horizontally;a rotation driving unit configured to rotate the substrate holding unit about a vertical axis line;a processing liquid nozzle configured to supply a processing liquid for performing a liquid process onto the substrate;a rotary cup that is provided at the substrate holding unit to surround the substrate held on the substrate holding unit and to be rotated along with the substrate holding unit, and is configured to guide the processing liquid dispersed from the substrate that is rotating; andan outer cup that is provided around the rotary cup with a gap therebetween and is configured to collect the guided processing liquid by the rotary cup,wherein a height of an upper end of the rotary cup is higher than a height of an upper end of the outer cup,an outward protrusion protruded outwards in a radial direction of the rotary cup and extended along a circumference of the rotary cup is provided at an upper end portion of an outer surface of the rotary cup, andthe outward protrusion is ...

PLASMA TREATMENT APPARATUS HAVING DUAL GAS DISTRIBUTION BAFFLE FOR UNIFORM GAS DISTRIBUTION

A plasma treatment apparatus includes a chamber configured to treat a substrate; a direct plasma generation region in the chamber into which process gas is introduced to directly induce plasma; a plasma inducing assembly configured to induce the plasma to the direct plasma generation region; a substrate treatment region in the chamber in which the plasma and vaporized gas introduced from the outside of the chamber are mixed with each other to form reactive species and the substrate is treated by the reactive species; a dual gas distributing baffle configured to provide the plasma to the substrate treatment region and distribute the vaporized gas to a center region and a peripheral region of the substrate treatment region; a plurality of through-holes formed through the dual gas distributing baffle so as to provide plasma to the substrate treating region; and a center buffer region configured to store the vaporized gas. 1. A plasma treating apparatus having a dual gas distribution baffle for a uniform gas distribution , comprising:a chamber configured to treat a substrate to be treated;a direct plasma generation region in the chamber into which process gas is introduced to directly induce plasma;a plasma inducing assembly configured to induce the plasma to the direct plasma generation region;a substrate treatment region in the chamber in which the plasma introduced from the direct plasma generation region and vaporized gas introduced from the outside of the chamber are mixed with each other to form reactive species and the substrate to be treated is treated by the reactive species;a dual gas distributing baffle included between the direct plasma generation region and the substrate treatment region to provide the plasma to the substrate treatment region and distribute the vaporized gas to a center region and a peripheral region of the substrate treatment region;a plurality of through-holes formed through the dual gas distributing baffle so as to provide plasma ...

SUBSTRATE CLEANING SYSTEM, SUBSTRATE CLEANING METHOD AND MEMORY MEDIUM

A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured. 1. A substrate cleaning system , comprising:a first processing apparatus comprising a first holding device configured to hold a substrate, and a treatment solution supply device configured to supply onto an entire portion of a front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film; anda second processing apparatus comprising a second holding device configured to hold the substrate, and a removal-solution supply device configured to supply onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured.2. The substrate cleaning system according to claim 1 , further comprising a back-surface cleaning device configured to supply a cleaning solution to a center portion of a back surface of the substrate held by the second holding device.3. The substrate cleaning system according to claim 1 , wherein the first holding device is a suction-holding device configured to suction-hold the substrate claim 1 , and the second holding device is a holder device configured to hold the periphery of the substrate.4. The substrate cleaning system according ...

Substrate cleaning device and substrate processing apparatus including the same

A substrate cleaning device includes a cleaning brush having a circular upper end surface, and cleans a lower surface of a substrate by bringing the upper end surface of the cleaning brush into contact with the lower surface of the substrate rotated by a spin chuck. A space forming member is provided for cleaning of the cleaning brush. The space forming member has a lower end surface. Further, the space forming member has a circular opening in a lower end surface and forms an inner space. A cleaning liquid is supplied to the inner space of the space forming member with the circular opening closed by the upper end surface of the cleaning brush, whereby the cleaning liquid is allowed to flow out from the inner space through the circular opening and a gap between the upper end surface of the cleaning brush and the lower end surface of the space forming member.

WAFER CLEANING APPARATUS AND WAFER CLEANING METHOD USING THE SAME

A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed. 1. A method for cleaning a wafer , comprising:providing a wafer on a stage inside of a chamber;fixing the wafer to the stage by moving a grip pin that is connected to an edge of the stage to the wafer;supplying first ultrapure water onto the wafer while the wafer is rotating at a first rotation speed;releasing the grip pin from the wafer by moving the grip pin away from the wafer; andperforming a development process by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.2. The wafer cleaning method of claim 1 , further comprising claim 1 , after the development process is completed:moving the grip pin toward a center of the stage to fix the wafer to the stage;supplying second ultrapure water onto the wafer while the wafer is rotating at the first rotation speed to clean the wafer; anddrying the wafer.3. The wafer cleaning method of claim 1 , wherein the providing of the wafer onto the stage comprises:forming a photoresist layer on the wafer;forming a mask pattern on the photoresist layer; andexposing the photoresist layer through the mask pattern.4. The wafer cleaning method of claim 1 , wherein the fixing of the wafer to the stage by moving the grip pin comprises:moving the grip pin toward a center of the stage to bring the grip pin into contact with a side surface of the wafer.5. The wafer cleaning method of claim 1 , wherein ...

SUBSTRATE INVERTING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE SUPPORTING DEVICE, AND SUBSTRATE INVERTING METHOD, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE SUPPORTING METHOD

A pair of guide parts of a substrate inverting device comes in contact with the peripheral edge portion of a substrate on both sides in the width direction of the substrate. The switching mechanism changes a state of contact between the pair of guide parts and the substrate by switching the positions of the pair of guide parts between a first contact position and a second contact position. Each of the pair of guide parts has a first contact region and a second contact region. The second contact region is located at a position different in the up-down direction and the width direction from the position of the first contact region. The substrate inverting device is capable of switching regions of the guide parts that come in contact with the substrate between the first contact regions and the second contact regions in accordance with the state of the substrate. 1. A substrate inverting device comprising:a supporting mechanism coming in contact with a peripheral edge portion of a substrate in a horizontal posture and supporting said substrate from below;a catch-and-hold inversion mechanism catching and holding said substrate supported by said supporting mechanism and inverting said substrate,wherein said supporting mechanism includes:a pair of guide parts that comes in contact with the peripheral edge portion of said substrate on both sides in a width direction of said substrate;a guide moving mechanism advancing and retracting said pair of guide parts between a contact position at which said pair of guide parts comes in contact with said substrate and a retracted position that is farther away from said substrate than said contact position; anda switching mechanism changing a state of contact between said pair of guide parts and said substrate by switching positions of said pair of guide parts positioned at said contact position between a first contact position and a second contact position, andeach of said pair of guide parts has:a first contact region that comes in ...

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD

According to one embodiment, a substrate cleaning apparatus that cleans a substrate while rotating the substrate, the substrate cleaning apparatus includes: a first cleaning liquid supplier that sprays cleaning liquid in a spray shape at a first spraying angle toward a center of the substrate; and a second cleaning liquid supplier that sprays cleaning liquid in a spray shape at a second spraying angle greater than the first spraying angle toward an area between the center of the substrate and an edge of the substrate. 1. A substrate cleaning apparatus that cleans a substrate while rotating the substrate , the substrate cleaning apparatus comprising:a first cleaning liquid supplier that sprays cleaning liquid in a spray shape at a first spraying angle toward a center of the substrate; anda second cleaning liquid supplier that sprays cleaning liquid in a spray shape at a second spraying angle greater than the first spraying angle toward an area between the center of the substrate and an edge of the substrate.2. The substrate cleaning apparatus according to claim 1 , whereina line that connects the first cleaning liquid supplier and a center of an arrival area of the cleaning liquid sprayed from the first cleaning liquid supplier is substantially perpendicular to a longitudinal direction of the arrival area, anda line that connects the second cleaning liquid supplier and a center of an arrival area of the cleaning liquid sprayed from the second cleaning liquid supplier is substantially perpendicular to a longitudinal direction of the arrival area.3. The substrate cleaning apparatus according to claim 1 , further comprising a cleaner that comes into contact with the substrate and cleans the substrate.4. The substrate cleaning apparatus according to claim 3 , wherein the first cleaning liquid supplier and the second cleaning liquid supplier spray cleaning liquid in a direction substantially perpendicular to a longitudinal direction of the cleaner.5. The substrate ...

SUBSTRATE CLEANING TOOL, SUBSTRATE CLEANING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SUBSTRATE CLEANING TOOL

A substrate cleaning apparatus comprises a substrate holding roller and an edge cleaner. The substrate holding roller is configured to hold and rotate a substrate to be processed. The edge cleaner is in contact with an edge portion of the substrate to be processed and includes resin material containing fluororesin particles at least in a portion in contact with the substrate to be processed. 1. A substrate cleaning tool comprising a resin material where at least a portion in contact with a substrate to be processed contains fluororesin particles.2. The substrate cleaning tool according to claim 1 , further comprising:at least a first region of the portion in contact with the substrate to be processed; anda second region of the portion in contact with the substrate to be processed,wherein a distribution density of the fluororesin particles varies between the first region and the second region.3. The substrate cleaning tool according to claim 1 , wherein the fluororesin particles are contained in a surface of the substrate cleaning tool.4. The substrate cleaning tool according to claim 1 , wherein the fluororesin particles are a conductive resin.5. The substrate cleaning tool according to claim 1 , wherein the fluororesin particles are a resin containing carbon nanotubes.6. A substrate cleaning tool comprising a resin material where at least a portion in contact with a substrate to be processed contains catalyst metal particles.7. The substrate cleaning tool according to claim 6 , further comprising:at least a first region of the portion in contact with the substrate to be processed; anda second region of the portion in contact with the substrate to be processed,wherein a distribution density of the catalyst metal particles varies between the first region and the second region.8. The substrate cleaning tool according to claim 6 , wherein the catalyst metal particles are contained in a surface of the substrate cleaning tool.9. A substrate cleaning apparatus comprising: ...

LIQUID CARBON DIOXIDE SUPPLY DEVICE AND SUPPLY METHOD

Provided are a supply apparatus and a supply method for supplying fluid carbon dioxide that are energy-saving and efficient. The supply apparatus for supplying fluid carbon dioxide includes: a circulation system including a purifying unit that removes impurities and contaminants from the carbon dioxide, a storage unit that includes a condenser for changing gaseous carbon dioxide passed through the purifying unit into liquid carbon dioxide, a supply unit that includes a first pump for supplying the liquid carbon dioxide in the storage unit to a use point, and a return line through which excess carbon dioxide supplied from the supply unit but not used at the use point is returned to the storage unit; and a carbon dioxide introduction unit that introduces carbon dioxide, as a starting material or recovered gas, to the circulation system. The carbon dioxide introduction unit includes a second pump for increasing the pressure of the carbon dioxide and the second pump introduces the carbon dioxide to the circulation system. 1. A supply apparatus for supplying fluid carbon dioxide comprising: a purifying unit removing impurities and contaminants from carbon dioxide;', 'storage unit including a condenser for changing gaseous carbon dioxide passed through the purifying unit into liquid carbon dioxide;', 'a supply unit including a first pump for supplying the liquid carbon dioxide in the storage unit to a use point; and', 'a return line through which excess carbon dioxide supplied from the supply unit but not used at the use point is returned to the storage unit or purifying; and, 'a circulation system includinga carbon dioxide introduction unit introducing carbon dioxide, as a starting material or recovered gas, to the circulation system,wherein the carbon dioxide introduction unit includes a second pump for increasing pressure of the carbon dioxide as the starting material or the recovered gas, the pump introducing the carbon dioxide to the circulation system.2. The supply ...

BRUSH WITH NON-CONSTANT NODULE DENSITY

Provided is a disclosure for a brush for cleaning a surface, where the brush comprises a center core and cleaning material around the center core. Modules are found on the cleaning material, where nodule density on the cleaning material varies. Accordingly, a first nodule density of a first region of the cleaning material is different than a second nodule density of a second region of the cleaning material 1. A brush for cleaning a surface , comprising:a center core; andcleaning material, around the center core, comprising nodules,wherein a first nodule density of a first region of the cleaning material is different than a second nodule density of a second region of the cleaning material.2. The brush of claim 1 , wherein a nodule density is smaller at a longitudinal center of the brush than at a longitudinal end of the brush.3. The brush of claim 1 , wherein the nodules form a substantially helical pattern on the cleaning material.4. The brush of claim 1 , wherein the nodules form a substantially grid pattern on the cleaning material.5. The brush of claim 1 , wherein a nodule density is substantially symmetric about a longitudinal center of the brush.6. The brush of claim 1 , wherein a nodule pattern is substantially symmetric about a longitudinal center of the brush.7. The brush of claim 1 , wherein the nodules are formed as a part of the cleaning material.8. The brush of claim 1 , wherein the nodules are attached to the cleaning material with an adhesive.9. The brush of claim 1 , wherein at least one nodule has a different shape than another of the nodules.10. The brush of claim 1 , wherein the brush comprises elongated nodules near a longitudinal center of the brush.11. The brush of claim 1 , wherein a diameter of a first cross-section of the brush is greater than a diameter of a second cross-section of the brush.12. The brush of claim 1 , wherein a cross section of the brush is substantially circular.13. The brush of claim 1 , wherein the cleaning material is ...

SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus includes a substrate stage that supports a substrate, a follower stage disposed on a same plane as the substrate stage, a first driving unit that moves the follower stage in parallel with a first direction, and a second driving unit that moves the substrate stage in parallel with the first direction. The second driving unit includes a voice magnet member disposed on the substrate stage, and a voice coil member disposed on the follower stage and spaced apart from the voice magnet member. 1. A substrate processing apparatus , comprising:a substrate stage that supports a substrate;a follower stage disposed on a same plane as the substrate stage;a first driving unit that moves the follower stage in parallel with a first direction; anda second driving unit that moves the substrate stage in parallel with the first direction, a voice magnet member disposed on the substrate stage; and', 'a voice coil member disposed on the follower stage and spaced apart from the voice magnet member., 'wherein the second driving unit comprises2. The substrate processing apparatus of claim 1 , wherein the substrate stage comprises a through opening penetrating the substrate stage in a second direction crossing the first direction claim 1 ,wherein the follower stage comprises a through member that passes through the through opening,wherein the voice coil member is disposed on the through member, andwherein the voice magnet member is disposed in the through opening.3. The substrate processing apparatus of claim 2 , wherein the voice magnet member comprises an opening into which the voice coil member is inserted.4. The substrate processing apparatus of claim 2 , wherein the voice coil member comprises:a first coil plate disposed on a first surface of the through member; anda second coil plate disposed on a second surface of the through member, the second surface facing the first surface in the first direction, a first voice magnet including a first opening into ...

METHOD OF CLEANING WAFER AND WAFER WITH REDUCED IMPURITIES

A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially. 1. A method of cleaning a wafer comprising:a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; anda cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer,wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.2. The method of claim 1 , wherein the scrubbing operation proceeds for 285 seconds or more.3. The method of claim 1 , wherein the first cleaning operation comprises cleaning the brush cleaned wafer with a first cleaning solution comprising ammonia and hydrogen peroxide to prepare a first cleaned wafer.4. The method of claim 1 , wherein the second cleaning operation comprises cleaning the first cleaned wafer with a second cleaning solution comprising hydrochloric acid and hydrogen peroxide to prepare a second cleaned wafer.5. The method of claim 1 , wherein the target wafer comprises a silicon carbide with a 4H structure claim 1 , and at least one surface of the cleaned bare wafer comprises a Si surface claim 1 , where a silicon atom layer is exposed on the at least one surface.6. The method of claim 1 , wherein the scrubbing operation comprises rotating the target wafer and the brush.7. The method of claim 6 , wherein a rotation rate of the target wafer is 1 rpm to 50 rpm and a rotation rate of the brush is 10 rpm or more.8. The method of claim 1 , wherein the scrubbing operation comprises a first scrubbing ...

Substrate treatment method and substrate treatment apparatus

A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate.

Method of stripping a photoresist, and method of manufacturing a semiconductor device

A method of reducing resist residue on a semiconductor substrate includes introducing ozone gas into a chemical solution effective to dissolve resist residue adhered to the semiconductor substrate. The chemical solution is circulated through a processing tank where the semiconductor substrate is immersed in the chemical solution and through a first circulation path having a first pump and filter. After dissolution of the resist in the processing tank, the chemical solution is circulated through a second circulation path having a second pump and filter and returned to the processing tank. The first filter is cleaned by circulating the chemical solution through a third circulation path that includes the first pump and filter and introducing ozone gas into the chemical solution.

SUBSTRATE TREATMENT APPARATUS

A substrate treatment apparatus includes a brush moving mechanism which moves a shaft to which a cleaning brush is attached. The brush body includes a substrate contact portion of a pillar-shaped portion. The substrate treatment apparatus further includes a correcting member and a relatively-positioning mechanism. When the correcting member is placed in a target position, a contact portion of the correcting member overlaps an object portion which is a combination of a design contact portion and a belt-shaped annular portion in an outer surface of a design pillar-shaped portion of a design body of a design brush. The contact portion is formed to have an inverted shape of the object portion of the design brush, and a portion of the contact portion, which corresponds to the belt-shaped annular portion, is a center-axis facing surface which faces a center axis of the shaft. 1. A substrate treatment apparatus comprising:a rotary holding mechanism configured to hold a substrate and rotate the substrate about a predetermined rotation axis;a cleaning brush including a brush body which is elastically deformable; anda brush moving mechanism including a shaft to which said cleaning brush is attached, the shaft extending in a direction transverse to a main surface of said substrate, and the brush moving mechanism being configured to move said cleaning brush by moving said shaft, whereinsaid brush body includes a pillar-shaped portion extending in a direction in which said shaft extends, and includes a substrate contact portion which forms an end surface of said pillar-shaped portion and is configured to come into contact with said substrate,said brush moving mechanism is capable of bringing said substrate contact portion of said brush body into contact with the main surface of said substrate,a design brush is defined by a virtual cleaning brush which has a design shape of said cleaning brush and is attached to said shaft in a predetermined manner,a design body is defined by a ...

WASHING DEVICE AND WASHING METHOD

A washing device includes: a plurality of spindles which holds a substrate and rotates the substrate about a central axis of the substrate as a rotary axis; and a single tube nozzle which discharges a washing liquid toward an upper surface of the substrate, wherein the single tube nozzle discharges the washing liquid so that the washing liquid lands in front of the center of the substrate and the landed washing liquid flows on the upper surface of the substrate toward the center of the substrate. A liquid flow on the upper surface of the substrate after landing of the washing liquid discharged from the single tube nozzle passes through the center of the substrate. 1. A washing device comprising:an arm;a two-fluid jet nozzle which is supported on the leading end of the arm and moving toward the outer circumference from the center of a substrate by the rotation of the arm, to supply a jet flow, which is generated by mixing ultrapure water(DIW) with gas, onto the substrate; andan on-arm spray nozzle which is provided in the arm to supply a chemical liquid, which has conductivity, to the upper surface of the substrate in the vicinity of the two-fluid jet nozzle;wherein the chemical liquid is supplied to the vicinity of the washing location at which the jet flow collides with the substrate surface.2. The washing device according to claim 1 ,wherein the liquid-landing area by the on-arm spray nozzle is disposed in an area up to 180° rotation in the forward direction of a rotation direction of the substrate from the washing location by the jet flow of the two-fluid jet nozzle.3. The washing device according to claim 1 , wherein the two-fluid jet nozzle is supported at the leading end portion of the arm and the spray nozzle is provided in the vicinity of the two-fluid jet nozzle claim 1 , and the arm is rotatably attached to a column at the other leading end portion of the arm.4. A washing device comprising:a substrate rotation mechanism configured to hold a substrate and ...

Method and a processing device for processing at least one carrier

According to various embodiments, a method may include: filling a chamber and a tube coupled to the chamber with a first liquid, the tube extending upwards from the chamber; introducing a portion of a second liquid into the first liquid in the tube; and at least partially removing the first liquid from the chamber to empty the tube into the chamber so that a continuous surface layer from the introduced second liquid is provided on the first liquid in the chamber.

SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL

Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material. 1. A method for drying a substrate including a plurality of high aspect ratio (HAR) structures , comprising: displacing fluid between the plurality of HAR structures using a solvent including a bracing material,', 'wherein after the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures; and', 'exposing the plurality of HAR structures to non-plasma based stimuli to remove the bracing material., 'after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate2. The method of claim 1 , wherein the bracing material is polymer-based.3. The method of claim 1 , further comprising:prior to the exposing, depositing a film including a photo acid generator,wherein the non-plasma based stimuli includes radiation.4. The method of claim 1 , further comprising:prior to the exposing, depositing a film including a thermal acid generator,wherein the non-plasma based stimuli includes elevated temperature.5. The method of claim 1 , wherein:the non-plasma based stimuli is provided at a top portion of the plurality of HAR structures; andin response to the non-plasma based stimuli, a degradation front moves through the bracing material from a top portion of ...

Substrate processing method and substrate processing apparatus

A liquid film of a processing liquid containing at least one of sulfuric acid, a sulfate, peroxosulfuric acid, and a peroxosulfate, or a processing liquid containing hydrogen peroxide is formed on a substrate. A plasma is radiated to the liquid film. Thereby, a substrate processing method in which substrate processing using an oxidizing power of the processing liquid can be efficiently performed is provided.

Substrate processing apparatus, substrate processing method and recording medium

A substrate processing apparatus can remove, from a substrate having a copper wiring formed by a dry etching process using an organic etching gas, e.g., one or more kinds of organic etching gases selected from a methane gas, a CF-based gas, a carboxylic acid-based gas containing a methyl group and an alcohol-based gas, an organic polymer which is originated from the organic etching gas and generated in the dry etching process and adheres to a surface of the substrate. In a substrate processing apparatus 1 , a first processing unit 4 includes a first cleaning liquid supply unit 43 a configured to supply a first cleaning liquid L 1 selected from a chemical liquid containing hydrogen peroxide and a chemical liquid containing a polar organic solvent, and the first cleaning liquid L 1 is supplied onto a substrate W 1 from the first cleaning liquid supply unit 43 a.

SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate. 1. A substrate processing apparatus comprising:a substrate holding unit that holds a substrate in a horizontal posture;a plate that has a size equal to or larger than a principal face of the substrate held by the substrate holding unit, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below the principal face;a processing liquid supply unit that supplies a processing liquid to the liquid holding face;a movement unit that relatively moves the substrate holding unit and the plate to bring or separate the principal face of the substrate and the liquid holding face close to or from each other; anda control unit that controls the processing liquid supply unit and the movement unit to execute a processing liquid film forming step of supplying the processing liquid to the liquid holding face by the processing liquid supply unit to form a processing liquid film on the liquid holding face, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other by the movement unit to bring the principal face of the substrate into contact with the processing liquid film ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

A substrate processing apparatus includes: a substrate holder; a processing liquid supply nozzle that supplies a processing liquid to a substrate held by the substrate holder; a liquid receiving cup that receives the processing liquid supplied to the substrate; a processing chamber that accommodates the liquid receiving cup and has an opening at an upper side; a shield that shields a region outside the liquid receiving cup in the opening of the processing chamber; a driver that moves the liquid receiving cup between a first processing position separated from the shield and a second processing position above the shield; and a processing liquid guide that causes a processing liquid dropped onto the shield to fall downward. 1. A substrate processing apparatus comprising:a substrate holder;a processing liquid supply nozzle that supplies a processing liquid to a substrate held by the substrate holder;a liquid receiving cup that receives the processing liquid supplied to the substrate;a processing chamber that accommodates the liquid receiving cup and has an opening at an upper side;a shield that shields a region outside the liquid receiving cup in the opening of the processing chamber;a driver that moves the liquid receiving cup between a first processing position separated from the shield and a second processing position above the shield; anda processing liquid guide that causes a processing liquid dropped onto the shield to fall downward.2. The substrate processing apparatus according to claim 1 , wherein the shield is configured by stacking two plate-like shielding plates having a plurality of through holes in a thickness direction claim 1 , andthe processing liquid guide is a through hole which penetrates the two shielding plates in the thickness direction when the two shielding plates are stacked.3. The substrate processing apparatus according to claim 2 , further comprising:a mover that moves one shielding plate of the two shielding plates in the shield along an ...

Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate

A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

SUBSTRATE TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching. 116-. (canceled)17. A substrate treatment method comprising:forming a metal film on a pattern of a substrate; andremoving the metal film with etching, bar supplying a liquid chemical to the metal film in a state that a noble metal is in contact with the metal film.18. The substrate treatment method according to claim 17 , whereina surface of the pattern is exposed by removing the metal film with etching.19. The substrate treatment method according to claim 17 , wherein the liquid chemical is alkaline.20. The substrate treatment method according to claim 17 , wherein the metal film includes tungsten.21. The substrate treatment method according to claim 17 , whereinthe noble metal includes a concave-convex surface, and the liquid chemical is supplied to the metal film in a state that the concave-convex surface is in contact with the metal film.22. The substrate treatment method according to claim 17 , whereinthe noble metal is porous, and the liquid chemical is supplied to the metal film in a state that the porous noble metal is in contact with the metal film.23. The substrate treatment method according to claim 17 , whereinthe pattern includes a stacked body including conductor films including a same metal as that of the metal film and insulator films alternately stacked. This application is a continuation-in-part application of Ser. No. 15/700,694 filed on Sep. 11, 2017 and also based upon and claims the benefit of priority from Japanese Patent Applications No. 2017-053310 filed on Mar. 17, 2017, No. 2017-185305 filed on Sep. 26, 2017, and No. 2018-043388 filed on Mar. 9, 2018; the entire contents of these ...

Cleaning member, and method for manufacturing the same

A cleaning member includes a nonwoven structure whose shape is retained by entanglement between single fibers having a median fiber diameter of from 100 to 2000 nm. The nonwoven structure has an apparent density of from 0.05 to 0.60 g/cm 3 . Preferably, the cleaning member may further include a support, and the support and the nonwoven structure may be arranged in contact with one another. Preferably, the single fiber may be an electrospun fiber. A method for manufacturing a cleaning member includes: a step of performing spinning by electrospinning, and thereby forming a deposit of a single fiber; and a step of pressing the deposit, and thereby forming a nonwoven structure having an apparent density of from 0.05 to 0.60 g/cm 3 .

Substrate treating apparatus and substrate transporting method

A substrate treating apparatus and a substrate transporting method wherein a platform is disposed on a first ID block, and a platform is placed on a second ID block. A currently-used carrier platform is provided only on the first ID block. Accordingly, a substrate is transported in both a forward path and a return path between the first ID block and a second treating block. The substrate is returned not to the first ID block but to the second ID block disposed between the two treating blocks in the return path.

Substrate treating apparatus

Disclosed is a substrate treating apparatus for performing treatment with supply of fluids to a substrate. The apparatus includes a first treatment housing, a treating section provided inside of the first treatment housing and configured to treat a substrate placed on a mount table with the fluids, a first fluid supplying section located on a first lateral side of the treating section, seen from a front side face where maintenance is performed to the first treatment housing, and configured to supply a first fluid of the fluids to the treating section, and a second fluid supplying section located on a second lateral side of the treating section, seen from the front side face, and configured to supply a second fluid of the fluids to the treating section.

Substrate processing device which performs processing on substrate

A substrate processing device includes: a substrate holding member which horizontally holds a substrate; a first supply unit which has a first opening opposed to a lower surface of the substrate held by the substrate holding member and supplies fluid from the first opening toward the lower surface of the substrate; an opposing part having an upper surface opposed to the lower surface of the substrate held by the substrate holding member; and a second supply unit which supplies rinsing liquid from a second opening to a concave surface which is recessed on a central side in the upper surface of the opposing part. A height of the first opening is higher than a height of a liquid surface, of the rinsing liquid supplied to the concave surface, when the rinsing liquid overflows the opposing part. Therefore, the opposing part can be highly accurately cleaned.

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS X

A substrate cleaning apparatus for bringing an elongated roll cleaning member into sliding contact with a flat plate type substrate to perform cleaning processing on the substrate includes a roll holder for supporting the roil cleaning member so that the roll cleaning member is rotatable, an elevating mechanism that has a linking member for supporting the roll holder, and moves the roll holder up and down so that the roll cleaning member applies a predetermined roll load to the substrate, a sensor member that is provided to the linking member and measures frictional force between the roll cleaning member and the substrate, and a controller for performing feedback control on the frictional force between the roll cleaning member and the substrate based on a measured value of the sensor member. 1. A substrate cleaning apparatus for bringing an elongated roll cleaning member into sliding contact with a flat plate type substrate to perform cleaning processing on the substrate , comprising:a roll holder for supporting the roll cleaning member so that the roll cleaning member is rotatable;an elevating mechanism that has a linking member for supporting the roll holder, and moves the roll holder up and down so that the roll cleaning member applies a predetermined roll load to the substrate;a sensor member that is provided to the linking member and measures frictional force between the roll cleaning member and the substrate; anda controller for performing feedback control on the frictional force between the roil cleaning member and the substrate based on a measured value of the sensor member.2. The substrate cleaning apparatus according to claim 1 , wherein the sensor member is disposed inside the linking member.3. The substrate cleaning apparatus according to claim 1 , wherein the sensor member measures a roll load onto the substrate by the roll cleaning member claim 1 , and the controller controls up-and-down movement of the roll holder based on the measured value of the ...

Wafer dicing method

A wafer dicing method comprises providing a wafer and performing a cutting procedure and a contacting procedure. The wafer includes a plurality of dies and a metal layer, wherein the metal layer is formed on a scribe line which is formed between adjacent dies. A cutter is used to cut the metal layer along the scribe line during the cutting procedure to form a plurality of dies on the wafer, and the metal layer cut by the cutter remains a plurality of metal burrs on the dies. A brush is used to contact with the metal burrs along the cutting slot during the contracting procedure to prevent each of the metal burrs from protruding from a surface of each of the dies.

POST-CMP HYBRID WAFER CLEANING TECHNIQUE

A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with a multi-branch chemical dispensing unit are applied beneficially to clean semiconductor wafers, post-polish, using a hybrid cleaning method. An exemplary hybrid cleaning method employs a two-chemical sequence in which first and second chemical treatment modules are separate from one another, and are followed by a pH-neutralizing-rinse that occurs in a treatment module separate from the first and second chemical treatment modules. Implementation of such hybrid methods is facilitated by the multi-branch chemical dispensing unit, which provides separate chemical lines to different chemical treatment modules, and dispenses chemical to at least four different areas of each wafer during single-wafer processing in an upright orientation. The multi-branch chemical dispensing unit provides a flexible, modular building block for constructing various equipment configurations that use multiple chemical treatments and/or pH neutralization steps. 1. A brush-cleaning apparatus for use in cleaning semiconductor wafers , the brush-cleaning apparatus comprising: an alignment mechanism configured to position a semiconductor wafer in a vertical orientation within the chemical treatment module,', 'a pair of rotatable brushes disposed on opposite sides of the semiconductor wafer at a selected distance measurable and adjustable by the alignment mechanism, and', 'a multi-branch chemical dispensing unit configured to deliver chemical separately to the two or more chemical treatment modules, and to apply the chemical to at least four different areas of the semiconductor wafer;, 'two chemical treatment modules separate from one another, each chemical treatment module includinga neutralization module, separate from the chemical treatment modules; anda drying module.2. The brush-cleaning apparatus of claim 1 , further comprising a track ...

SEMICONDUCTOR WAFER CLEANING APPARATUS

A semiconductor wafer cleaning apparatus is provided. The semiconductor wafer cleaning apparatus includes a spin base having a through hole. The semiconductor wafer cleaning apparatus further includes a spindle extending through the through hole. The semiconductor wafer cleaning apparatus also includes a clamping member. The clamping member covers the through hole and connected to the spindle. A gap that communicates with the through hole is formed between the spin base and the clamping member. In addition, the semiconductor wafer cleaning apparatus includes a sealing ring. The sealing ring is positioned adjacent to the gap and located farther away from the spindle than the gap. 1. A semiconductor wafer cleaning apparatus , comprising:a spin base having a through hole;a spindle extending through the through hole;a clamping member covering the through hole and connected to the spindle, wherein a gap that communicates with the through hole is formed between the spin base and the clamping member; anda sealing ring positioned adjacent to the gap and located farther away from the spindle than the gap.2. The semiconductor wafer cleaning apparatus as claimed in claim 1 , wherein the clamping member has an inclined surface that clamps an edge of a wafer claim 1 , wherein a distance between the inclined surface and a center of the spin base is substantially equal to a radius of the wafer.3. The semiconductor wafer cleaning apparatus as claimed in claim 1 , wherein the sealing ring comprises an O-ring which surrounds the through hole.4. The semiconductor wafer cleaning apparatus as claimed in claim 1 , wherein the spin base has a flange formed at an edge of the through hole claim 1 , and the gap is formed between the flange and a bottom surface of the clamping member.5. The semiconductor wafer cleaning apparatus as claimed in claim 4 , wherein the sealing ring is located below the clamping member claim 4 , and claim 4 , in the vertical direction claim 4 , the height of the ...

BREAK-IN APPARATUS, BREAK-IN SYSTEM AND STORAGE MEDIA

A break-in apparatus has a supply unit for supplying a cleaning liquid, a substrate support unit for holding a dummy substrate W and a cleaning member holding unit for performing a break-in processing on the cleaning member by rotating the cleaning member and bringing the cleaning member into contact with the dummy substrate W 1. A break-in apparatus for performing a break-in processing on a cleaning member comprising:a supply unit for supplying a cleaning liquid;a substrate support unit for holding a dummy substrate; anda cleaning member holding unit for performing the break-in processing on the cleaning member by rotating the cleaning member and bringing the cleaning member into contact with the dummy substrate.2. The break-in apparatus according to claim 1 , whereinthe cleaning member holding unit is configured to be able to hold three or more cleaning members.3. The break-in apparatus according to claim 1 , whereinthe cleaning member is a roll cleaning member or a pencil cleaning member.4. The break-in apparatus according to claim 1 , whereinthe cleaning member holding unit is configured to be able to hold two or more cleaning members and to contract the cleaning members with each of a front side and a backside of the dummy substrate, andthe substrate support unit holds the dummy substrate to vertically extend.5. The break-in apparatus claim 1 , according to claim 1 , further comprisinga first movement unit for enabling the break-in apparatus to move.6. The break-in apparatus according to claim 1 , whereinthe supply unit starts to supply the cleaning liquid from inside the cleaning member, and then the supply unit starts to supply the cleaning liquid from outside the cleaning member.7. The break-in apparatus claim 1 , according to claim 1 , further comprisinga detection unit for detecting a force applied to the cleaning member.8. The break-in apparatus claim 1 , according to claim 1 , further comprisinga first communication unit for making communication with a ...

Substrate processing system and substrate processing method

A substrate processing system includes a protective film forming liquid supplying unit which supplies a protective film forming liquid to one surface of a substrate, a protective film forming unit which solidifies or hardens the protective film forming liquid and forms a protective film on the one surface of the substrate, a suction unit which suctions the one surface of the substrate, a processing unit which executes predetermined processing with respect to the other surface of the substrate in a state that the one surface of the substrate is suctioned by the suction unit, and a removing liquid supplying unit which has a removing liquid discharge port that discharges a removing liquid being capable of removing the protective film and supplies the removing liquid toward the one surface of the substrate from the removing liquid discharge port.

METHOD, DEVICE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM FOR DETERMINING TIMING OF REMOVING SUBSTRATE FROM CASSETTE IN SUBSTRATE PROCESSING DEVICE, AND SUBSTRATE PROCESSING DEVICE

Provided is a method, device, and program for determining a timing of removing a substrate from a cassette in substrate processing device, and substrate processing device. In the method, a tentative removal time point of each substrate is calculated by adding a transfer time to a tentative removal time point of the one previous substrate, wherein the transfer time is required from the start of an action of removing a substrate from the cassette to the end of an action of delivering the substrate to an exchanger.

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

There is provided a substrate processing method which includes polishing a rear surface of a substrate before a pattern exposure such that the rear surface is subjected to a roughening treatment; and bypassing a roughness alleviating treatment with respect to the polished rear surface of the substrate. 1. A substrate processing method comprises:polishing a rear surface of a substrate before a pattern exposure such that the rear surface is subjected to a roughening treatment; andbypassing a roughness alleviating treatment with respect to the polished rear surface of the substrate.2. The method of claim 1 , wherein the polishing of the rear surface of the substrate is performed to reduce friction between the rear surface of the substrate and top surfaces of a plurality of protrusions formed in a substrate stage of a pattern exposure device claim 1 , the substrate being mounted on the substrate stage of the pattern exposure device in a suctioned state.3. The method of claim 1 , wherein the polishing further includes forming grooves in the rear surface of the substrate in a circumferential direction of the substrate claim 1 , wherein the grooves are formed at different positions from a center of the substrate in a radial direction of the substrate.4. The method of claim 1 , further comprising: after the polishing claim 1 , cleaning the rear surface of the substrate by a pure water.5. The method of claim 1 , wherein the polishing further includes scanning a polishing body between a central portion of the rear surface of the substrate and a peripheral portion of the rear surface while rotating the substrate.6. A substrate processing apparatus which forms a resist film on a substrate and develops the substrate after a pattern exposure claim 1 , comprising:a polishing treatment part configured to polish a rear surface of the substrate such that the rear surface of the substrate is subjected to a roughening treatment before the pattern exposure,wherein a roughness ...

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS

A substrate cleaning apparatus for reducing a limitation of a layout of a chemical liquid nozzle and a rinsing liquid nozzle, while enabling a load cell to be installed at an optimal location and achieving a larger adjustment range, is disclosed. The substrate cleaning apparatus includes a roll assembly including at least a roll cleaning member to be brought into contact with a substrate and a roll arm that rotatably supports the roll cleaning member, a support arm for supporting the roll assembly; an adjustment screw extending through the support arm and screwed into the roll assembly; and a screw support that fixes a relative position of the adjustment screw in a vertical direction with respect to the support arm and rotatably supports the adjustment screw. 1. A substrate cleaning apparatus , comprising:a roll assembly including at least a roll cleaning member to be brought into contact with a substrate and a roll arm that rotatably supports the roll cleaning member;a support arm for supporting the roll assembly;an adjustment screw extending through the support arm and screwed into the roll assembly; anda screw support that fixes a relative position of the adjustment screw in a vertical direction with respect to the support arm and rotatably supports the adjustment screw.2. The substrate cleaning apparatus according to claim 1 , wherein:the roll assembly further includes a tilting mechanism that allows the roll cleaning member to tilt; andthe adjustment screw is screwed into the tilting mechanism.3. The substrate cleaning apparatus according to claim 1 , further comprising:a biasing device configured to bias the roll assembly toward the support arm.4. The substrate cleaning apparatus according to claim 1 , further comprising:a fixing device for fixing a rotational position of the adjustment screw.5. The substrate cleaning apparatus according to claim 1 , further comprising:a waterproof cover that covers a portion of the adjustment screw protruding from the support ...

Processing apparatus

Disclosed herein is a carrying mechanism that carries a plate-shaped workpiece in which a substrate larger than a wafer in area is stacked on a lower surface of the wafer. The carrying mechanism includes a carrying pad for covering an upper surface of the wafer, holding sections for holding the substrate on outside of the outer periphery of the wafer, and a water supply source for supplying water to the wafer. The carrying mechanism forms a predetermined gap between the lower surface of the carrying pad and the upper surface of the wafer, and carries the plate-shaped workpiece in a condition where the gap is supplied with a predetermined amount of water.