가스 클러스터 이온빔 기술에 기반한 중성빔 처리 방법 및 이에 의해 제조되는 물품
The present invention refers to a method and device discharge induction bridge nirtocellulose generally and, more particularly integrated circuit used for processing a substrate fabry k [thing gas cluster ion beam accelerated neutral monomer and/or neutral accelerated gas cluster beam method for a high beam purity are disclosed. Last 10 years, gas cluster ion beam (GCIB) we shall be well known for some time, been used widely used various surface and bottom surface applications. Conventional, gas-cluster ion because it has a large mass, even if significant energy accelerating moving at relatively low speed (ion of the existing method compares the) ix.. These low rates of the existing method associated with said weak built up in the cluster ion beam and plasma dispersion as compared to a reduced surface of reduced surface damage which extends into a unique surface penetration 2n. processing performance. Gas cluster ion beam, for example metal, semiconductor, or dielectric material including surface smoothing and wide variety, or etching, cleaning or, deposition on the wafer or, growing a film, surface deformation not been used. A semiconductor or semiconductor related material including applications, including film is a GCIB oxides or other cleaning, smoothing, etching, deposition and/or grown been used to. In addition, doping and lattice GCIB is an atomic species, which comprises introducing an amorphization surface cut material, semiconductor material to improve dopant solubility in been used. In many cases, the use of the GCIB ion of the existing method, ion beam and plasma using other techniques can be [...] number superior results. Semiconductor material is operated by introducing a dopant material having electrical characteristics polyquinoline and a wide range of material, silicon, germanium, diamond, silicon carbide, and group II - VI compound material including group IV and group III - component group further comprises component (not a number). (Ar) GCIB using argon as a source gas for forming the cathode of an inert and argon in ease, in many applications the coronary stent, orthopedic prosthesis, such as gas and argon GCIB using other injectable injectable medical devices has been developed for treating the surface of medical device. In semiconductor applications, reactive etching, physical etching, film deposition, film-growth, and other useful processing procedure for various source gas and source gas mixture have diameters less than 2000. Electronic dopant and lattice type containing the species to GCIB and form. HPV type GCIB processing extensive surfaces for introducing various practical system known. For example, the stent for blood vessel such as the American publication by Kirkpatrick [...] patent 6,676,989 C 1 or cylindrical workpiece GCIB processing system adapted to process a workpiece holder and manipulator having inform other. In another example, Kirkpatrick publication by the American patent 6,491,800 B 2 is, for example a hip joint prosthesis inclusive of other types shaped [...] GCIB processing system for processing a workpiece holder and medical devices having a gas for informing other. In another example, Libby publication by the substrate loading/unloading system automated U.S. patent 6,486,478 B 1 suitable for processing semiconductor wafers for informing other. Hautala for American patent 7,115,511 publication by the use of non-scanned GCIB workpiece to mechanical scanner for scanning for informing other. In another in the embodiment, the medical device is in American patent 7,105,199 B 2 Blinn publication by improving adhesion of the coating and drug, medicament from elution ratio of said medical devices for GCIB processing by varying the release rate or the use of a publicly known to each other. Determining and of a material such as diamond and other gemstones GCIB is been used to non-crystalline form of etching and smoothing. This is always an undesirable color change as a result of twisting apoxvirus GCIB processing that are not completely successful. This trimming material resulting from some forms of damage whether surface or bottom surface, or GCIB processing and said material to be inserted between said GCIB processing resulting from etching and/or unmodified bulking and smoothing rough surface layer interface in the form of check and correct, said cluster ion induced by the electrically charged surface damage due immunisation is not clear disclosed. The administration of said GCIB processing negative cause whatever, appearance and aesthetic [...] not induce undesirable degradation properties of natural gemstone and synthetic gemstone etching and/or preferably for smoothing processing techniques. GCIB processing displays lens, reflective optical surface, an optical window, optical panel, such as for photomask touch - screen panel, prism device, transparent substrate, optical waveguides, electric - optical device, and other optical device for smoothing the surface of the material and/or planarizing possible optical techniques for aqueous electrolyte. Optical device material of various forms of glass, quartz, sapphire, diamond, and other rigid transparent material which has a. Mechanical techniques, chemical - mechanical techniques, and other techniques including of the existing method most conductive polishing and planarizing surface required to the intended use is not formed. In many cases, may not be attained by the GCIB processing of the existing method polishing techniques for smoothing and/or planarizing to such an extent that optical surface can be indicated but, to avoid the generation of embedded optical material scattering layer between a rough interface surface smoothed for lower bulk material does not cause an alternative technique to 10sup16. In many applications, but has been successfully used in a GCIB processing, the party industry method and device together form a GCIB or new application of other conditions is not satisfied and existing applications is desired disclosed. In many cases, an initial GCIB smoothing rough surface of atomic scale may result in a slight but serviceable, requiring smoothness is smaller than the best smooth can be achieved which is essentially, in other cases the GCIB processing in order to enable smooth surface can be further smoothly rather than roughen. In addition, the highest/opportunities is resolved by way of the present invention embodiment found present. In the field of drug - eluting medical implant, engages said GCIB processing substrate coating, said coating after elution from which drug to a patient for medical implant at a varying speed in the structure which has a surface of the coating was a success. However, a drug coating GCIB (very thin is restored, can be very expensive in terms of drug) used for processing in some cases, coating said GCIB processing weight losses will occur as a result of drug (drug loss or number substantially display) capable of genes of interest for other. This supplying water for specific cases (by certain medicines and specific processing parameters), does not avoid the occurrence of said weight losses can be generally preferred process but, preferably drug eluting speed number can still obtain satisfactory [...]. In semiconductor applications, many GCIB is varied degrees of success but includes a surface treatment in the improvement can be used, improving the opportunity present. In the treatment of the existing method GCIB, the result of the existing method of the tape but significantly improve previous processes, most still required use of required quality are not correct. For example, smoothing process, many material substantially GCIB processing can be always obtained final smoothness level meeting request are not correct. Doping, lattice-strained, and film deposition, film-growth, and amorphization other uses such as for the purposes of further material introduced at the semiconductor material (called infusion GCIB may possibly negative) applications in, or injected, or grown, or amorphization, an interface between the strain layer material to be applied or deposited GCIB - damaging lower substrate layer 1b when irradiated with or non-uniformly on the interface between the flow tides. Many process, ions in the electrostatic field and magnetic field for operation of their electric charged is since long been preferred to their hereinafter. This in the process significant flexible acaricidal inducing substrate. However, in some applications any ion (including gas cluster ion in GCIB) embedded in a charge treated surface can be an undesirable effect. Single or small GCIB plurality having a charge of the gas cluster ion ion (a single atomic, molecular, or molecular fragment) of the existing method compares the more population current (hundreds or thousands of cluster number can be molecules) number of nephrophathy transmission position. Specifically, insulating material in case of ions and the treated surface charge induced by the rapid discharge of an accumulated charge obtained from damage, or material induced by electric field stress in pinion (obtained from the accumulated charges are again by) when causing flow tides. In this in many cases, due to advantages in terms of GCIB is relatively low per unit mass but, in some cases the purpose of charging door when the number cannot. In addition, proper to the high current ion beam strength over a billion number transporting a focused beam over long preferably tend to of the beam can be derived by non-bunching cause significant space charge. Again, due to the benefits of the existing method for ion beam per unit mass low GCIB is but, space charge-transporting door number cannot completely eliminated. In another example of a opportunity request or neutral molecular or atomic beam space charge - use of a part of the surface processing applications and benefits in number but free beam transport [...], energy per molecule is generally electronic or electronic - nozzle number approximately a few milli - [...] neutral molecular or atomic strong beam number if its bolt and not number is hereinafter for to produce or maxillo-mirror, it became grudge number generated from the fact exhibits. In Hughes Electronics Corporation America patent 4,935,623, Knauer further comprises energy (1 a-10eV) charged atoms and/or neutral atoms of the method for forming the beams for informing other. The form of the existing method GCIB Knauer, scattered forwardly of the same atom and at least one of the existing method or ion beam cluster ions causing silicon which causes the graded with respect to the solid surface plates causes aging oriented at an angle. This can be used in the treatment of, or said ion hereinafter electrostatic separation in the process of ion and neutral atoms of the neutral atom beam so that the beam may be used as it became non-bunching 2n.. To flex the dissociation, solid surface said GCIB off the variance of the link, Knauer techniques is significant door number caused by other. A wide range of beam energy for, it is striking GCIB 2n. potent scattering surface. It Knauer as used by GCIB even significant scattering into a solid gray making angle, the forwardly scattered neutral beam ion and neutral atoms, reflected and scattered/dissociation used derived from existing in the cleaning solution to the solid surface represented unambiguously assigned over other particles (for example, Aoki, T and Matsuo, J, "Molecular dynamics simulations of surface smoothing and sputtering process with glancing provided angle gas cluster ion beam", Nucl. Instr. & Meth. , Phys. Research B 257 (2007), 645 - 648 side reference). A plurality of applications including medical device processing applications and semiconductor processing applications, the presence of such scattering material from contaminating the front light scattered beam causes unsuitable for using it. In U.S. patent 7,060,989, Swenson GCIB gas cluster ion energy dispersion or the like in high gas pressure using a gas pressure cell to modify the beam generating than the pressure for informing other. In said reducing gas cluster ion energy of the GCIB technique, such modified GCIB processing surface of a portion of the features are deformed. The GCIB gas cluster ion energy distribution gas but modifications are useful, in said GCIB workpiece charged ions deposited caused by reducing number in which the door portion, specific processing door number, for example GCIB solve drug coating weight losses in processing the tropics. Such as Swenson techniques of the GCIB smoothing features but optimized surface can be improved, the result is still ideal uninhabitable. Conventional, gas cluster ion size gas cluster and each cluster including atoms or molecules (gas atoms or molecules depending different from the, ion, monomer, dimer, trimmer, including deformation such as ligands) characterized by a number of (N). Many of the existing method GCIB contribute by the GCIB advantage in low speed and subsurface substrate and excessive ion penetration, injection, or damage by collision with the solid surface without [...] heat and pressure to cause large collapse is considered the fact that the clusters are loosely coupled derived from vehicle from the outside. The large cluster (as defined hereinafter has approximately thousands or more monomer - - N) number encoded into one of several tens of angstroms generally. However, cluster impact surface is smaller (approximately hundreds - having about thousands of N) caused damage surface generating more separate impact crater can be represented the nanometer range (for example, Houzumi, H. , Or the like. ". ". "". "Scanning tunneling microscopy observation of graphite surfaces irradiated with size-a selected Ar cluster ion beams", Jpn. J. Appl. Phys. V44 (8), (2005), 6252 ff side reference). This crater - larger clusters and the formation surface smoothing effect in an undesirable contention (etching) can be a stand-alone number material from and to roughen the surface. GCIB is useful in many other surface processing applications were found, large gas cluster ion and small gas cluster ion effects of processing performance can compete as is considered to keep down method for reducing vehicle from the outside. We regret that it, a GCIB to form hereinafter for applications having a size range of about 100 - both technique provides a wide range of distribution of cluster sizes (N) only be by diffusion preventing film of to induce the production of substrate. Size distribution of average and/or peak is often gradually reduced from said maximum point size distribution is within a range of several hundreds of thousands - 0 having distribution tail. Cluster ion size distribution and said distribution - average associated with cluster sizes, NAverage Depending on the source gas and parts are formed, according to the technique of the existing method GCIB both by the spray nozzle pressure drop, temperature and nozzle seat by cluster number selected by the parameter of the nozzle used to form be significantly influenced. Most of the GCIB process tool includes a periodically magnetic size have a size compatible to distinguish the signal to ad hoc indistinguishable or damaged the smallest ion and cluster (about N=10 or more monomers, dimers, such as trimmer) number a stationary substrate. This filter is referred to as a "monomer filter" confidence, a number somewhat larger as well as conventional monomer ion stand-alone substrate. Specific electromagnetic cluster ion size selector (for example, such as used in U.S. by Knauer patent 4,935,623 negative) is positioned in the beam of an electrical conductor grid is requested, this beam contamination and while inducing metal wire, additional device information on the need for inducing a strong beam of a grid potential erosion due 190 inducing substrate. For this reason, magnetic type generally current monomer and low mass filter are disclosed (for example, such as such as American patent 6,635,883 Torti Libby and U.S. patent 6,486,478 reference). Magnetic filter number which would effectively by the smallest ion (monomer, such as dimers) in addition, gas cluster ion size does not contain or contains only about N=100 hereinafter appears to substrate. This size is formed after formation of the be hereinafter for stable or not. However, clusters of within the range of about N=100 - hundreds of GCIB processing tool shown most commercial beam present therein. N - range of several hundreds of thousandsAverage When the value of the of the existing method using the same are often generated. Acceleration of a predetermined level with respect to the, medium-sized cluster faster than large cluster movable, they crater, rough interface, and other desired space may result in undesirable effects and, in addition GCIB processing returns which contribute to less than ideal cell lines disclosed. In a microelectronic semiconductor processing techniques, required in forming device structures, using conventional photoresist lithography structuring step performs in an numerous variety. Number of photolithographic step number is obtained one door [...] of photoresist material is the seventh contamination is that the wetting ability, which is subsequently processing steps or adversely affect process yield by scratching can be reduce. Device geometry and the processing advances to particulate contamination is further small size by fixing the more important number is under or over. In addition, photoresist lithography by smaller device for the features of gradual request another by a door number appears substrate. FACC door number thinner photoresist layers to cope for photoresist pattern (a thickness less than 50 nm) photoresist material including x - ray wavelength even if required to correspond to the adjusted should short. The number and corresponding, improved a semiconductor processing which does not require the use of photoresist-based lithography patterning technique considers etc. against. As an alternate number, focused ion beam techniques is used to come. In addition, open pattern template (in addition, a stencil or aperture mask referred to as soak) is formed with a projection patterning template can be used as a template or patterning. In the specification, mask thus, stencil, or templates are all "templates" or "template" small size called substrate. Neutral beam technology ability improved semiconductor processing techniques the shallow surface layer with the possibility to a particular application, a very small number for the capacitor is in particular very shallow for semiconductor structures by using suitable processes for forming improved structure template. Thus, the purpose of the invention is a workpiece treatment for high purity gas cluster beams to be neutral number [...] device and method. It is another object of the present invention high purity gas cluster beam number [...] intermediate cluster is substantially free of a device and method to be a number [...]. Another object of the present invention having an energy in a range of about 1eV - eV thousands by neutral atoms or molecules of high purity, highly, device and method for forming a high strength beam [...] number capable disclosed. Comparison of the present invention another object is to provide improved surface smoothing of the existing method GCIB is a device and method for forming the beam to be [...] number. The purpose of the invention is a device and method for doping and/or modified to form a film, on the surface of the semiconductor or other materials external to a device and method for atomic species and number [...], said treated surface of the existing method GCIB formed using processing than the lower substrate has an excellent material. Treater of the present invention another object is to provide a semiconductor or other materials on the surface of the amorphous region to a device and method for forming and [...] number, the interface to the substrate material of the existing method GCIB processing lower than those formed using a 0.5 or 1. It is another object of the present invention are expressed at a higher final smoothness of the existing method GCIB with control device and method for etching a surface having excellent [...] a number capable disclosed. With control of the present invention another object is to provide an optical surface having excellent smoothness of the existing method GCIB comparing device and method for etching a final number [...] capable disclosed. It is another object of the present invention obtained by the structure of the existing method method attachment device and method for attaching an optical coating to be formed on a number [...]. It is another object of the present invention against degradation due to exposure to atmosphere for reducing the sensitivity of the same surface of the optical device and a method for transforming a number [...], the number [...] optical devices to be improved. It is another object of the present invention moisture absorption material for reducing the sensitivity of hygroscopic material and method for forming a barrier on the surface of [...] number, the number to be [...] improved material. Of the existing method GCIB processing of the present invention another object is to provide formed excellent than those of the lower substrate material and/or other materials form a film on the surface of interface adapted for and/or to a device and method for growing number [...] 2000. The electrically insulating material of the present invention additional gas cluster of neutral beam, and/or beam charge no damage induced by such material transporting device and method for processing a number [...] for processing monomers capable disclosed. It is another object of the present invention by the irradiation of the optical element or optical element surface of the neutral beam method for improving a number to be [...][...] properties. It is another object of the present invention improved properties number [...][...] or optical elements having a neutral beam technique in the past disclosed. The SiC or SiC on silicon substrate of the present invention additionalX Forming a layer to be a number [...] method. It is another object of the present invention neutral beam techniques by the hard mask are transferred to a lithography processing with high - and formed by the device number by number [...] bath method and capable disclosed. The driven pulley of the present invention is hereinafter described herein are various embodiment of the present invention as well as other purpose and other purposes and advantages by way is achieved. A plurality of patterned hard mask formed on the second surface of the substrate tearoom waitress stress method comprising the following steps. Accelerated neutral beam a deaerator and number [...]; depressurizing chamber in said gas cluster ion beam is formed including carbon atoms gas cluster ion including; said gas cluster ion to accelerate said accelerated gas cluster ion beam along a beam path in a decompression chamber is formed; said beam path along at least a portion of said fragmentation and/or disassembled to facilitate the accelerated gas cluster ion; said beam path from said pressure chamber to said stand-alone number charged particles beam path formed by treater accelerated along a process. The patterned substrate can be introduced into said substrate and said template and said decompression chamber; said substrate holding said beam path; said accelerated by irradiating said surface of the substrate through an opening in the patterned template said treater for treating the surface regions of said substrate by implanting carbon atoms and/or densified carbon - containing regions of patterned layer is formed into a; said template and separated from said substrate; said surface having a patterned layer containing carbon - number 1 (are) etching one or more trenches (are) and at least one plateau forming surface of said first non-carbon containing material and a stand-alone in number; said plateau (are) and trench (are) is formed on the hard mask layer; said planarizing device layers of semiconductor trench hard mask (are) number from a stand-alone and not plateau (are); in addition said etching said hard mask layer as a mask film weight ÷ number 2 surface using a stand-alone number substrate materials treated by other. Number substantially step number can be a stand-alone both essentially charged particles from the beam path. Said method further include the step of heat treating said substrate after the number can be resized. Neutral beam can be essentially gas consisting of said gas cluster ion beam. The step of promoting said gas cluster ion beam accelerating voltage of definition in ionization efficiency can be elevating or ameliorating comprising. The step of promoting said accelerated gas cluster ion beam can be in increasing a dynamic range of the speed of the ion. The step of promoting pressure chamber by introducing one or more phase component used to form the gas cluster ion beam along a beam path increases the pressure can be. The step of promoting accelerated gas cluster ion beam or neutral part of the radiant energy with the can. Processing at least a portion of said workpiece substantially 1eV - thousands eV having energy of neutral beam can be made up. Scanning said surface of said substrate processing steps which are elongated accelerated neutral beam processing can be further. Said substrate can be crystalline or amorphous contains silicon. Said SiC processing stepsX (0. 05<X<3) forming a layer of the can. Said hard mask layer is a silicon dioxide can be. Said number 1 the etching step including number 2 argon can be accelerated using the neutral beam. Cl said number 2 the etching step2 Or CCl2 F5 Plasma etching technique can be. 5 A-50 kv said gas cluster ion by a potential of the acceleration step can be accelerating. Said method the treatment step 1 × 1014 - 5 × 1016 Ion/cm2 carbon atoms can be injecting a predetermined dose. Said carbon - containing about 1 - thickness of about 3 nm may have patterned layer. The bottom of the hard mask region number 2 the etching step can be flush the entire substrate surface. Other embodiment of the present invention in the form of upper surface of the patterned hard mask formed by the aforementioned number [...] substrate. The present invention refers to accelerated gas cluster ion beam and high beam purity method and system is derived from a number [...], accelerated neutral gas clusters and/or preferably can be used in the treatment of various types of shallow upper surface and a lower surface material, with control of the existing method GCIB excellent performance in many applications at a higher polymerizable monomer beam number [...] substrate. 1EV - thousands eV energy in a range of extremely particles having beam is directed, is accelerated, high strength can be [...] neutral monomer beam number. Energy range, neutral particles in many applications in, for example cleaning, etching, smoothing, deposition, or hereinafter for a amorphization, or surface chemical effect surface to the bottom surface or shallow binding can advantageously or needs of water if desired. In this case, particles can be about 1eV - eV of energy is often useful maximum thousands. This involves a simple by relatively inexpensive device, to form high strength treater is impractical energy ranges. Various embodiment in one form, accelerated neutral beam varying surface and the shallow bottom surface material handling, and this processing method is improved by the high pressure liquid coolant materials and device number can be used. First, these accelerated neutral beam formed of the existing method accelerated GCIB, then beam method and operating conditions not induce impurities by partially or essentially completely dissociated and, then charged site from the remainder of the neutral beam to isolate, for workpiece processing continuously obtained by using generated and accelerated by the treater. According to the degree of dissociation of gas cluster ion said, neutral gas or a mixture of gas cluster monomer produced neutral beam, or essentially all or substantially all neutral gas can be made up. Said accelerated neutral beam a neutral monomer beam preferably essentially completely dissociated. Method and device of the present invention embodiment can be in the form of number by GCIB ionized beam including a tank has an advantage all normal and are beam charging of material due to the surface of this material by the charge to be transported without damage to the electrically insulated material can be use in processing are disclosed. For example, semiconductor and other electronic applications, ion often oxide, nitride such as damage or destruction charging of the film dielectric constant thin contribute to substrate. The use ion beam reflecting surface charging or other fillers due to non-prescription drugs cannot accept other applications capable of generating polymer, dielectric, and/or other electrically insulating or high-resistance material, coating, and films can be successful beam can be treated. Coating and irradiation cross-linking and/or polymerizing processing number billion corrosion of organic film examples comprising (grudge [eps negative number). In another example, by operon or other deformation of the neutral beam dielectric constant material (for example, sterilization, smoothing, biocompatible surface attachment and/or number and improving drug release rate improving word) and/or other medical/surgical application to medical device for an implant can be used in these materials can. Another example glass, polymer, and ceramic bio - culture system for neutral beam processing and/or a beam wrap, for example 1b, smoothness, hydrophilic, and biocompatible properties such as surface features can be used to improve environmental sampling surface comprises. In the form of method and device of the present invention embodiment can be formed by accelerated neutral beam is provided with a superordinate GCIB to because it includes, preferably at an energy for acceleration and ion beam techniques of the existing method hereinafter, for focused to hereinafter. For dissociation and subsequent separation of particles of a neutral beam based on neutral particles from said charged ion is focused track tends to remain in, a wide range of distances can be the transported good effect. In relation to a neutral gas ionized by electron bombardment in number when the clusters, heating and/or excited. This acceleration after the ionized gas by moving the empty line below the word monomer can be cause subsequent evaporation. Additionally, ionizer, accelerator, and non-area as background gas molecules in the gas cluster ion of excitation method and apparatus for heating gas cluster ion conflicts can then, after subsequent evolution cause additional gas cluster ion from acceleration can be monomer. These extinguishing mechanism includes the same GCIB is formed monomer gas (and/or other gas cluster) and/or background gas molecules when collision induced by electron bombardment, evolved monomers not contribute any contamination in the beam by causing dissociation. GCIB gas cluster ion beam without pollution in inducing dissociation (or monomer evolution by inducing) other mechanism can be used for the pin is. In addition, some of the neutral gas these mechanism can be used to cluster beam a neutral gas cluster identity. One mechanism - infrared or other using laser energy cluster ion beam laser irradiation are disclosed. Laser irradiated GCIB in gas cluster ion laser light to induce heating induced by gas cluster ion excitation and/or heating, the monomer from a beam by the subsequent evolution deformable cladding layer. Other mechanism gas cluster ion beam radiation beam to affect the thermal energy photons thermally heated temperature through substrate. In tube radiant heat energy gas cluster ion of gas cluster ion excitation and/or heating to induce heating derived, monomer from a beam by the subsequent evolution deformable cladding layer. In other mechanism, GCBI (or other non-polluted gas) source gas as a gas for formation of a gas or mixture by gas cluster ion beam number in cross beam in relation to a gas cluster ion excitation and/or heating, and said gas cluster ion beam gas excited gas cluster ion from monomer in number in relation to subsequent evolution cause 2n. collision of the monomer gas. Generally according to electron bombardment, beam earlier in the ionization and/or crash (other cluster ion, or GCIB for forming a gas (are) used to those of background gas molecules), and/or for generating said GCIB dissociation and/or fragmented non-contaminating gas laser or heat radiation and/or crossed state during a collision number, contamination of materials of different beam collision avoided. The dissociation of the above-mentioned method by the use of non-polluting such, part of the original source gas atoms undergo cleavage product or residual GCIB is not without introducing at least partially dissociated atomic cluster or dissociated substrate. By using source gas, residual clusters or dissociation product work piece can be processed using a contaminated initial cluster formation does not contain atomic in contamination of the workpiece is avoided. Light when argon or other inert gas, volatile material does not chemically reacts and source gas, subsequent treater and workpiece by irradiation, these volatile non-reactive atoms are emitted from completely workpiece. The, glass, quartz, sapphire, diamond and lithium borate (LBO) tri of other rigid, material transparent including optical and gem material for workpiece, argon and other inert gas oxygen source gas material due to irradiation of the neutral beam without 1308. ball number. In other cases in, other source gas can be used, end-source gas atoms cause contamination of the workpiece components does not include the atoms. For example, some glass workpiece, LBO, and various other optical material and containing oxygen, the oxygen atom of the contamination function as low dielectric materials may not be disclosed. In this case, contamination free - oxygen-containing source gas can be used. Neutral gas as a cluster, cluster number from an inner tube sheet the electron ionization ionization screens moving through an area, leaving remaining or mild cellular cluster, one or more of charge charge state can be obtain q (incident electrons emitted by electrons in a cluster). Higher charge state is achieved and less operating conditions ionizer caused a high probability more high charge state likelihood take place in particular gas cluster conditions ionizer affecting other. Cause higher ionization efficiency high electron flux and/or high electron energy more high-strength ionizer conditions resulting from (within limits) can be. Into the bottom end of ionized gas, typically extracted from the ionizer, beam focused, in addition common by dropping acceleration with each other. The amount of the size of an electric field for accelerating said cluster ion acceleration to the number encoded by number hereinafter. Generally, conventional commercial of GCIB process tool includes, for example conventional 1 kv - 70 kv (maximum 200 kv or more VAcc Can be realized in the range of but, not limited to this range) adjustable acceleration potential, VAcc Having common gas cluster ion accelerates to ball number encoded. The, charged gas cluster ions alone 1 provided 70 KeV (V greaterAcc Is used if more) range of energy is reached, a plurality of charged (for example, not a number, charge state, electronic charge q=3) gas cluster ions 3 provided 210 KeV (V higherAcc In more) range of energy is achieved. Gas cluster ion charge state and accelerator level with respect to the other, energy per accelerated qVAcc EV are disclosed. From predetermined ionizer having predetermined ionization efficiency, gas cluster ion can be from 0, for example 6 higher number such as the distribution of charge state may have (or high efficiency ionizer having), in addition charge state distribution mean value and sets the most likely increased ionizer efficiency (higher electronic flux and/or energy) are increased by. In addition, increased gas cluster that is formed at a higher ionizer efficiency ionizer 2n. of the wafer. In many cases, high efficiency ionizer operate the GCIB processing through [...] when GCIB current increased with each other. Such operations are disadvantageous crater and medium-sized gas cluster ion generated on a plurality of charge state can be rough for forming and crater and these ions can increase, these effects often processing operation intention can be flour tree branches are disclosed. Thus, for many GCIB surface treatment method, the selection of said ionizer operating parameter only maximize beam current than more consideration involving ix.. Some process, "pressure cells" (such as Swenson U.S. patent 7,060,989 call reference) use of high ionization efficiency but can be used for operatively ionizer, "pressure cells" still elevated pressure gas by collision of beam energy by comparing the acceptable range of beam processing etc.. Neutral beam when be formed in a form of the present invention embodiment, high efficiency ionizer operation (real, such operation may if desired negative) this time free used. Ionizer is high efficiency when operated, ionizer in the gas cluster ion charge state is produced by a wide range thereof can. This ionizer and accelerating electrode between the extraction area, and in addition in the low-velocity 2n. downstream in gas cluster ion beam. It is generally the largest gas cluster ion fragmentation in beam causing a high degree of enhanced frequency can cause gas cluster ion base station. The more fragmented small cluster sizes in beam causes a redistribution of cluster sizes can be tilted. These cluster fragments (N) their new size in proportion to the energy holding the less active but essentially the initially non-fragmented holds the accelerated gas cluster ion of velocity. An experimental of change of energy maintenance speed after impact as signal peptides (for example, Toyoda, N. Or the like. , "Cluster size dependence on energy and velocity distributions of gas cluster ion after collisions with residual gas," Nucl. Instr. & Meth. , Phys. Research B 257 (2007), 662 - 665 side) are as reported to the). In addition, fragmentation causes a redistribution of charge in cluster fragments can. Compared fragments highly charged portion is generated multi - charged gas cluster ion several charged compared as a fragment highly fragmented gas cluster ion and in some cell lines disclosed. Ionizer and extracting the design of smaller gas cluster ion and monomer ion focusing field focused in the area promoting the possibility of collision with large gas cluster ion beam extraction area and downstream beam more gas cluster ion for dissociation and/or fragmented increase according to the present invention can contribute to the understanding by users are disclosed. In one form of the present invention embodiment, ionizer, overruns, and in empty line background gas pressures which are used industrially in good GCIB optionally pressure that is higher than its normal transmission can be arranged. This additional extinguishing gas cluster ion from monomer (initial gas cluster ion event resulting from the heating and/or the excitation resulting from at least a portion of) can cause. The pressure gas cluster ions through a plurality of collision between workpiece and ionizer background gas molecules must be sufficient short flight path can be arranged to average - free - path and long enough. N containing monomer, having q of charge state, VAcc Bolt accelerated by electric field electric potential to an allogenic gas clusters, said clusters approximately qV per monomerAcc /NI May have energy of eV, wherein NI In cluster ion acceleration time is in monomer number disclosed. The smallest gas cluster ions and [...] number, cluster source gas as a gas background gas monomer of conflicts can these ions of a generally qV gas cluster ionAcc /NI EV additional deposition can cause disclosed. The overall energy gas cluster ion energy (qVAcc ) In comparison with a relatively small, generally an exciting or heating and said cluster word 2n. evolution subsequent monomer. Greater background gas cluster of these conflicts can cluster method and apparatus for heating and/or the excitation to fragmented rather than by evaporation or similar mechanism 2n. evolution of monomers. About the source of the excitation caused evolution of gas cluster ion from monomer or monomer, said monomer (s) is approximately the same energy evolved per particles, qVAcc /NI Having eV, holds the evolved gas cluster ion approximately equal speed and trajectory. When such monomer extinguishing gas cluster ion is generated from, their ionization event originally, collision, or due to radiation heat caused from an exciting or furnace regardless of whether the voice, said greater charge remaining higher residual gas cluster ion and possibility. Thus, after a series of monomer extinguishing, large gas cluster ion is smallest at a residual gas cluster ion (in addition is the possibility exists that some equipment is provided to negative or fragmented) to move into the cavity and can be reduce the monomer of clouds. The original beam trajectory moves along said cavity having the same velocity of the original gas cluster ion and both comprising approximately monomer that is, each approximately qVAcc /NI EV of energy. Small gas cluster ion for, the energy of the collision of said background gas monomer possibly leading to the completely dissociated in a brutal manner small gas cluster, they are moving beam or beam emitted from monomers obtained continues whether the transaction isn't very sharp. To avoid contamination of background gas beam collision, said background gas is preferably a gas cluster ion constituting the gas and a gas. Typically, a nozzle for dispensing of gas cluster number and holds approximately 100 provided 600sccm high gas flow operation with each other. Gas flow portion of the source chamber pressure on the raise the cluster that is not condensed. In addition to the gas transmitted in the form of gas cluster through skimmer apertures, clustered vary from source chamber through source gas skimmer apertures downstream beam line or beam path (are) can flow into the chamber. A beam from a source chamber non-clustered source gas flow increased number line for skimmer aperture diameter [...] added by selecting a background gas collisions with the GCIB [...] number is attached to the non-pressure inducing of the existing method method are disclosed. the high source gas flow (said skimmer apertures clustered result in gas and gas to be transported to the target by the beam), the atmosphere gas purging quickly from encoded empty line. Alternatively, or is installed at the gas is moved, said GCIB as pointed across the path can be introduced as state number. In this case, gas is preferably identical to the source gas (or inert or non-polluting). Important applications, collision when said background gas plays an important role to evolution of monomers in order to identify the quality of background gas residue gas analyzer is empty line can be used in. Before reaching the GCIB workpiece, beam remaining in charged particles (gas cluster ion, specifically small and medium-sized gas cluster ion, and in some charged monomer as well as, any remaining including large gas cluster ion) beam of neutral from leaving only neutral beam for processing the workpiece apart from each other. In the normal operation of the, total (charged plus neutral) in proportion to the amount of beam delivery target processing in a fraction of the power in the range of about 5% -95% the neutral beam, the separation method and device described specification by neutral selectively target to transfer some of a kinetic energy of the entire accelerated charged beam pivotably. Gas cluster ion dissociation of, high and then neutral monomer beam energy production is hereinafter by the hereinafter for is equal to: 1) Operation at higher acceleration voltage. This cluster sizes for any given qVAcc Increasing/N; 2) operation at higher ionizer efficiency. This increasing q qV cluster sizes for any given byAcc Increase/N, a difference extraction area between clusters in charge state in cluster - in cluster - ion increasing ion bombardment; 3) high ionizer, overruns, or operation in empty line, or beam or sputtering gas across more elongated beam path operation by number. Both increase the probability of any given size by gas cluster ion FACC background gas; 4) or thermal radiation heating operation by the laser beam. This gas cluster ion from direct evolution of monomers and promote; and 5) operation in higher nozzle gas flow. This GCIB clustered along a trajectory and, likely increase transport gas of non-clustered, increasing the crash caused evolution higher monomer. Background caused the collision gas, gas cluster ion beam path length × workpiece from extraction area to the product of the pressure in this region the degree of dissociation of the gas generated cluster ions contribute to substrate. 30 Kv for acceleration, the ionizer parameter [...] average gas cluster ion charge state number 1, and 6 × 10-3 ESCA - cm (0. 8 - Cm modulus of elasticity) (in 25 °C) × beam path length is essentially completely dissociated pressure neutral energy monomer a neutral beam (after separation from remaining charged ion) number [...] substrate. The target thickness gas pressure as is generally characterized commonly × beam path lengths are disclosed. 6 × 10-3 ESCA - cm (0. 8 - Cm modulus of elasticity) is approximately 1. 94 × 1014 Gas gas molecules/cm2 target thickness into the slide groove. One exemplary embodiment (not a number) in one form, said gas pressure present in the 6 × 10 background-5 Torr (8 × 10-3 Modulus of elasticity) and, beam path length 100 cm and, 30 kv acceleration potential and, in addition in this case essentially completely dissociated in the beam path of the neutral beam end monomer observed substrate. This laser or radiation beam without heating, gas clothes and cross beam number not disclosed. The neutral beam acceleration conditions cluster ion event is completely dissociated, collision residue gas monomer, and beam in clusters from cluster furnace due to collision between the extinguishing monomer resulting from substrate. The use of dissociated treater compares the entire beam smoothing result in improved smoothing 2n. gold film. Other applications, in drug surface coating for a medical device, medical device relative to the layer of polymer - - mixture in drug, or drug - poly - mixture of medical device is employed for the entire GCIB dissociated treater generated when the drug is used without change of weight losses improved drug attachment and drug release rate number [...] substrate. The measurement of the gas cluster ion beam reflecting a current measuring made possible by conventional cannot. Neutral beam power sensor when neutral beam a workpiece irradiated dose measurement are used hereinafter for order. Said neutral beam sensor beam (or beam of publicly known when to the second sample) is a thermal sensor. The sensor temperature rising ratio adjusting relative to energy beam irradiation resulting from energy flux. An incident heat re-radiation of energy sensor value transferred to number range of temperature in order to avoid over should made. GCIB applied on the, beam power (watts) beam current (amperes) × VAcc , Beam acceleration driving voltage disclosed. (Seconds) when irradiated during regular GCIB workpiece, a workpiece (J) is received by the energy beam power product of irradiation time are disclosed. It takes effect region extended region of such beams (for example, cm2) distributed over the substrate. For ion beam, ion acceleration time average charge state, having q, VAcc Each ions accelerated by a potential difference between the bolt qVAcc EV (approximately 1 eV. 6 × 10-19 About J) of energy radiation dose is generally which said particular processing in terms of ion/cm2 are disclosed. Then, VAcc Is accelerated by, specific ion/cm2 average charge state, capable of accurately calculating the dose of ion beam represented hereinafter q J/cm2 for energy dose into the slide groove. In one form of the present invention embodiment used such as accelerated GCIB accelerated neutral beam derived from the, acceleration times the value of and V qAcc The value of the fraction of the beam highly charged beam (after - formation and separated) from each compared fraction and are the same. Number of 2 (neutral and charged) fraction of each beam fraction of GCIB in dividing the product mass in proportion to the vehicle from the outside. The, used in the form of the present invention embodiment as accelerated neutral beam, equivalent region when irradiation equally, neutral beam energy dose (J/cm2) deposited by the entire GCIB energy dose than must deposited by the disclosed. In entire GCIB power, PG And neutral beam power in, PN (About 5% - 95% found in conventional this at an entire GCIB by) for measuring by using a thermal sensor, for use in calculating the neutral beam processing dosimetry process from the compensation factor. PN The PG Equivalent to lower, the compensation coefficients are k=1/a are disclosed. Thus, when the workpiece derived from processed using a GCIB treater, for dosing duration to reach the required total GCIB ion/cm2 for D (charged and neutral beam including a portion) and processed against a duration greater than k times, then neutral beam and then the entire GCIB workpiece by both energy dose is deposited are the same (stage, the result 2 of beam in particle size difference will be qualitative difference be return effect). As used in the specification, for dosing the compensated in this way discharge induction bridge having an equivalent energy/cm2/cm2 D ion dose described when the disclosed. In many cases, heat is derived from a gas cluster ion beam dosimetry for power sensor in combination with the use gas cluster ion and neutral gas clusters and/or pulverized reflecting a positive neutral monomer mixture, in addition to this end beam current measurement by using measured conveniently dosimetry, total gas-cluster ion-beam or disestablished or bypassable portion as compared with the use of the oral mucosa. Hereinafter some advantage such as disclosed: 1) Of the beams full power because thermal sensor for measuring said dosimetry using neutral beam dosimetry can be more accurate. For dosimetry GCIB is while utilizing a traditional beam current measurements, measuring the contribution of only beam ionization portion, are used for dosimetry. The heater and to the alteration of the GCIB GCIB device of operating conditions and at least a set-up and setup in neutral cluster fraction of diversity can be cause neutral monomer. These diversity is a current measuring beam dosimetry can be performed by a number can be less when the process cause diversity. 2) By neutral beam, electrically charged very insulated material and other material can be damaged by the hypertensive effects of a variety of material is ionized beam aim to prevent charging of a workpiece with a workpiece transported caused due to the source of the number can be processed without the need neutral electronic [...]. Of the existing method GCIB when using, for the purpose of reducing charging without nearly complete neutralization, neutralized itself to electronic source workpiece heating, evaporation from contamination, or electron source in number when door causing thermal flow tides. Neutral beam of a workpiece with a charge transporting to the front and the door number is not reduced. 3) Neutral beam energy from monomer ions larger layer after separating device does not require battery voltage high strength magnet. In case of a of the existing method GCIB, to produce energy to be transported to the deep damage to penetrate into a workpiece with a monomer ion (and other small cluster ion) to risk of significant, expensive magnetic filter is periodically from the beam for separating particles such needs disclosed. The specification disclosure to the neutral beam in case of a device, for producing a power all monomer ions all ion separation of the treater number essentially stationary substrate. As used in the specification, terms "medium-sized" gas to gas cluster ion size cluster sizes or size of intended meaning that when referred N=10 a-N=1500 are disclosed. As used in the specification, terms "GCIB", "gas cluster ion beam", and "gas cluster ion" ionization beam as well as accelerated beam intended and including, all or a portion of their charge state ion having the modified their acceleration the substrate (including neutralization). Terms "GCIB" and "gas cluster ion beam" intended but including all beam acceleration gas cluster including, non-clustered particles disapproval. As used in the specification, the terms "neutral beam" accelerated gas cluster ion beam derived from the neutral gas clusters and/or neutral monomers and intended meaning that the beam, the accelerated gas cluster ion beam acceleration resulting from substrate. As used in the specification, reference to gas particles or beam of particles, terms "monomer" equally big one single atom or a single molecule. "Atomic" terms, "molecules," and "monomer" is used interaction can be, during gas question indicating the feature of the appropriate monomer (cluster components, the constituents of the cluster ions, atoms or molecules or either) big. For example, such as argon gas is 1 atomic, molecular, or monomer can be in terms of reference, the term them each a single atomic big. Similarly, in case of a gas such as nitrogen is 2, it is atoms, molecules, or monomer can be in terms of reference, 2 molecule of each term is big. In addition, CO2 Or B2 H6 Molecules such as atomic, molecular, or monomer can be in terms of reference, each term may be in a molecule of big. These rule gas, and gas clusters or gas cluster ion is whether 1, 2 or a gaseous molecules is general to simplify regardless of whether or not used for them are discussed. Molecules or with reference to the components of a solid material, "atoms" includes the meanings of the existing method. For better understanding of the present invention, other and further object attached drawing with reference thereto. Figure 1 shows a prior art GCIB workpiece to also using the front fixing plate is indicated which kind of device for processing are disclosed. Figure 2 shows a GCIB workpiece to be used ion beam scanning and workpiece operation also using other prior art for processing the front fixing plate is indicated which kind of device are disclosed. Figure 3 shows a beam highly charged and also for separating components of the present invention embodiment compared using the schematic diagram of the electrostatic deflection plate form according to device are disclosed. Figure 4 shows a schematic diagram of the form of the present invention embodiment using thermal sensor for measuring also neutral beam according to device are disclosed. Figure 5 shows a diagram of the deflection plate also dosimetry billion as components a number using the schematic diagram of the form of the present invention embodiment biased collected in the ion beam current according to device are disclosed. Figure 6 shows a diagram of the Faraday cup as components also dosimetry using the schematic diagram of the of the present invention embodiment samples collected in said biased ion beam form according to device are disclosed. Figure 7 shows a neutral beam also extending workpiece chip package for mechanically scanning using the schematic diagram of the form of the present invention embodiment according to device exhibits. Figure 8 shows a non-also by implanting the gas is installed at the target thickness of the present invention embodiment having means for form number for the schematic diagram of the gas according to device exhibits. Figure 9 shows a charged and neutral beam components of the present invention embodiment also using electrostatic mirrors for separating the schematic diagram of the form according to device exhibits. Figure 10 shows a deceleration - and also the neutral beam configuration of the present invention embodiment used for separating charged beam unit feeds the schematic diagram of the form according to device exhibits. Figure 11 shows a neutral beam components also alternate acceleration - deceleration configuration of the present invention embodiment used for separating charged beam from the schematic diagram of the form according to device exhibits. Also 12a, 12b also, also 12c, 12d and also the metal film the entire GCIB processing component of neutral beams in which a plurality of beam or a charged component processing as compared to a single film exhibits excellent smoothing processing result indicating that the cause. The entire GCIB processing by 13a and 13b also includes a neutral beam also treatment on behalf of the superior results causing drug eluting medical device exhibits drug coating on cobalt - chromium coupon represented by comparison. Figure 14 shows a schematic diagram of the device of the present invention embodiment also magnetic separation is used to form according to neutral beam processing are disclosed. Also 15a, 15b, and 15c form embodiment of the present invention comparing gas cluster ion beam is obtained when using a neutral beam representing TEM Image excellent interface are disclosed. Figure 16 of the present invention embodiment using suitable for forming a shallow junction in the form of pulp represents a shallow boron SIMS profile are disclosed. Figure 17 shows a form of the present invention embodiment also formed when used to form boron doped semi representing TEM Image quality interface are disclosed. Figure 18 of the present invention embodiment using SiO form2 And represents a etching of Si are disclosed. Also 19a and 19b amorphous layer of the present invention embodiment in the form of-sound materials also indicating usage TEM Image are disclosed. Also 20a and also form a film derived from accelerated GCIB-sound 20b for reflecting TEM Image representing application are disclosed. Figure 21 shows a GCIB also accelerated oil from the deposition of diamond - like carbon film onto treater and accelerated represents a silicon substrate are disclosed. Figure 22 shows a 1b also traveling, lack of flatness, and at the time of power is clean, typically polished optical surface of glass out of a atomic force micrograph map among others. Figure 23 shows a form of the present invention embodiment also accelerated GCIB smoothing of the treater and accelerated oil from optical surface of glass with the atomic force micrograph map according to among others. Also 24a, 24b also, also 24c, and 24d of the existing method of the present invention embodiment form according to techniques is also compares the optical excellent adhesion of the coating to the substrate to obtain an optically coating derived from no GCIB GCIB process for treater accelerated in step schematic representing among others. Degradation due to exposure to atmosphere is also 25b 25a and also non-treated surface of the atomic force micrograph map LBO optical components among others. According to of the present invention embodiment 26a and 26b is also lowered due to exposure to atmosphere also form obtained by GCIB having reduced degradation using the neutral beam accelerated derived from the processing of the surface of the atomic force micrograph map LBO optical components among others. Also 27a, 27b also, also 27c, and 27d also derived from silicon substrate is SiC or SiC GCIB treater acceleratedX In step schematic representing a process for forming a layer by ultraviolet light. Also 28a, 28b also, also 28c, 28d also, also 28e, 28f also, also 28g, 28h is derived from using the neutral beam accelerated GCIB also and improved micro - some device is temporarily stored in the hard mask pattern is formed on a substrate without required in fabrication process steps in schematic representing among others. Then, prior art GCIB processing device (100) for coarse configuration 1 also representing reference thereto. Low pressure container (102) is fluidically connected to a chamber 3 of: nozzle chamber (104), ionization/acceleration chamber (106), the processing chamber and (108). Each vacuum pump-chamber said (146a, 146b, and 146c) encoded by vacuum. Gas storage cylinder (111) pressurized stored condensable source gas (112) (for example, argon) gas to metering valve (113) and feed tube (114) through congestion chamber (116) into the substrate. Congestion chamber (116) pressure (normal, be atmosphere) in the nozzle (110) through a substantially lower pressure vacuum release of gas to induce ultrasonic gas state number (118) causes the formation of a substrate. In relation to a number number gas cooling is caused by an extension in state (118) is complied into a portion of the each some - thousands of lightly bonded atoms or molecules condenses on the causes. Gas skimmer aperture (120) is one of the plurality of cluster number from one of the plurality of cluster number that is not condensed gas molecules partially separated by number for the flow of gas to downstream chamber used for. In beamforming and transferring excess pressure is downstream chamber can be by high voltage management by avoiding the interference, and by avoiding the interference be osteoblast by gas cluster ion transport [ik it will do. Suitable condensable source gas (112) is argon, and other condensable inert gas, nitrogen, carbon dioxide, oxygen, as well as many other gas and/or gas mixture including but, not limited to them. Ultrasonic gas state number (118) in gas cluster to form, at least a portion of said at least one incandescent filament generally gas cluster (124) from (or other suitable source of electrons from) generates heat emitted electrons, and acceleration, said electronic gas state number (118) in gas cluster such that the enabling electron impact ionizer in ionizer (122) by ionized substrate. Gas cluster bombarded with electrons emitting electrons to about their gas cluster from a portion of the cluster cation. Some cluster includes one or more electrons emitted may have, multiple ionization can be. Typically, the number of electronic of acceleration and their energy of the ionizing remembers which number of number and gas cluster multi-ionized services a single ionized affecting other. Suppressor electrode (142), and earthing electrodes (144) is ionizer RFQ (126) to extract the cluster ion from, their desired energy (typically, hundreds tens has V - kV acceleration potential) and accelerated to, in addition focusing their GCIB (128) and form. Said GCIB (128) is ionizer RFQ (126) on the suppressor electrode (142) that traverses the region between extraction region referred to other. Gas cluster containing ultrasonic gas state number (118) (nozzle (110) is defined in the) axis of substantially GCIB (128) axis (154) and are the same. A filament power source (136) is ionizer filament (124) to allow it to be filament voltage (Vf ) A number [...] substrate. Anode power (134) is investigating said thermoelectric self - containing gas cluster number (118) by the filament (124) to produce ions emitted from the thermal acceleration by arranging the anode voltage (VA ) A number [...] substrate. Power number billion (138) the suppressor electrode (142) number billion to biasing voltage (VS ) Supplied a (approximately hundreds thousand - bolt). Accelerator power (140) the suppressor electrode (142) and earthing electrodes (144) to said ionizer (122) to biasing voltage of (VAcc ) V supplyAcc Equivalent 2n. on total GCIB acceleration potential. Suppressor electrode (142) the ionizer (122) of ionizer RFQ (126) to extract ions from, enables the electrons of the desired downstream from ionizer (122) to prevent entering, in addition focused GCIB (128) to form a function as follows. GCIB processing processed by the medical device, semiconductor material, optical element, even a workpiece or other good workpiece (160) includes a GCIB (128) placing a workpiece in the path of workpiece holder (162) being maintained on. Attachment but said workpiece holder, electric insulator (164) by processing chamber (108) and electrically insulated therefrom. Workpiece (160) and workpiece holder (162) striking the GCIB (128) electrical lead (168) through dose processor (170) into the substrate. Beam gate (172) shaft (154) workpiece along (160) GCIB to (128) decodes the penetration of the number. Typically, beam gate (172) is (for example) electrical, mechanical, or electromechanical which may be industrial (174) which has a number by the open state or closed state. Dose processor (170) is coupled to the workpiece (160) and workpiece holder (162) for managing dose received by the GCIB beam gate (172) decodes the open/closed state number. In operation, dose processor (170) includes a beam gate (172) is opened and the workpiece (160) GCIB irradiation of disclosure as follows. Typically, dose processor (170) is coupled to the workpiece (160) and workpiece holder (162) to determine the GCIB irradiation dose reaching the GCIB integrated electrical current is stored. In a predetermined dose, dose processor (170) when any dose is achieved when the beam gate (172) closes the other. In to the elucidation of the hereinafter, of the drawings for simplified, item number that runs from previous drawing without subsequent drawing can be referred. Similarly, in relation to the previous drawing referred to item is item number or additional description can be that runs without subsequent drawing. In this case, similar number for an item and the similar item, has already described features and function, the drawing shown free item shown in item number previously registered a similar items represented in the drawing by big item similar polymers having the same function. Figure 2 shows a GCIB workpiece treatment using ion beam scanning and workpiece operation also be used for other prior art GCIB processing device (200) of a fetus the front fixing plate are disclosed. GCIB processing device (200) workpiece processed by (160) includes a GCIB (128) disposed in the path of a workpiece holder (202) being maintained on. Said workpiece (160) in order to achieve uniform processing, workpiece holder (202) may be required for further processing as a uniform workpiece (160) designed to manipulate. Non-planar, for example in particular or cup-shaped, valence, irregularly shaped, or other non-flat plate-shaped workpiece surface is optional workpiece surface to obtain optimized GCIB processing beam incident angle can be oriented within the range. Workpiece holder (202) includes all the non-planar surfaces GCIB (128) suitable for processing arrangement on completely bent processing optimization and oriented so that the number can be [...] uniformity. More specifically, processing a workpiece (160) when is non-planar, workpiece holder (202) has a joint/rotation mechanism (204) by rotational movement (210) and rotated, articulate (212) diffracted. Said joint/rotation mechanism (204) a workpiece to a desired beam incidence surface transfers longitudinal axis (206) (axis of the GCIB (128) (154) by coaxial with) 360° devices for rotation and shaft (206) and an axis perpendicular to the (208) can be sufficient to allow articulating joint. Under certain conditions, workpiece (160) depending on the size of, constructing in a discharge chamber to obtain a large workpiece can be preferred. GCIB has not necessary but, 2 pair of perpendicularly oriented electrostatic scan plate (130 and 132) extended processing size with respect to a raster or other scanning can be used to produce a simulated metallization pattern. When scanning is performed on the such beams, scan generator (156) is lead pair (159) through the scan plate (132) and number [...] X - axis scanning signal voltage to the pair of, in addition lead pair (158) through the scan plate (130) Y - axis scanning signal voltage to the pair of number [...] substrate. Typically, scanning signal voltage is GCIB (128) is scanned GCIB (148) to convert a triangular and of a different frequency, this workpiece (160) scan the entire surface of the substrate. - Scanned beam defining aperture (214) is scanning area defining other. - Scanned beam defining aperture (214) is electrically and, low pressure container (102) electrically connected wall, support member (220) supported by the substrate. Workpiece holder (202) has a flexible electrical leads (222) by said workpiece (160) and said workpiece holder (202) surrounding the Faraday cup (216) and electrically connected to the, defined battery voltage (214) both passing a current collecting substrate. Said workpiece holder (202) has a joint/rotation mechanism (204) separated electrically from, said Faraday cup (216) insulator (218) by low pressure container (102) are mounted. The, - said scanned beam defining aperture (214) through the scanned GCIB (148) all of the current from a Faraday cup (216) and collected, electrical leads (224) through dose processor (170) to the heating chamber. In operation, dose processor (170) is coupled to the workpiece (160) disclosure of GCIB irradiation light receiving gate (172) to open the other. Typically, said dose processor (170) is said workpiece (160) and workpiece holder (202) and Faraday cup (216) delivering electrical current reaching the GCIB by integrating a GCIB irradiation dose to determine the accumulated per unit area. In a predetermined dose, said dose processor (170) is attached to the beam any dose when the gate (172) closes the other. Upon accumulation of a predetermined dose, workpiece (160) is supplied to all desired surfaces to ensure a joint/rotation mechanism (204) can be operated by a. Figure 3 shows a GCIB also charged site and for separating electrostatic deflection plate of the present invention embodiment compared highly site using form according to neutral beam processing device (300) is the schematic diagram of the. Non is installed at the (107) and workpiece processing region child [we it wraps the ionizer and an accelerator. Said non-is installed at the (107) is substantially pressure also has an effect on high conductive generally uniform disclosed. Vacuum pump (146b) is installed at the bag-type (107) evacuated and substrate. Gases can state number (118) in the form of gas transported by cluster and non-clustered, in addition gas skimmer aperture (120) in the form of leakage through such additional non-clustered non is installed at the gas (107) flow with each other. Non is installed at the (107) measuring pressure at a pressure sensor (330) is installed at the pressure data is non (107) from electric cable (332) through pressure sensor controller (334) transmitted from each other. Non is installed at the (107) is installed at the pressure in non (107) to gas flow in balance and vacuum pump (146b) pumping rate of other processes other. Gas skimmer aperture (120) diameter, nozzle (110) through source gas (112) flow, and vacuum pump (146b) of selected by the pumping rate, non-is installed at the (107) in pressure is determined by design and nozzle flow pressure, PB In balanced with each other. Ground electrode (144) from workpiece holder (162) GCIB to flight path, for example 100 cm are disclosed. Design and by adjustment, PB Approximately 6 × 10-5 Torr (8 × 10-3 Modulus of elasticity) implementation being. The, pressure and beam path length product of approximately 6 × 10-3 ESCA - cm (0. 8 - Cm modulus of elasticity) and, target thickness gas beams approximately 1. 94 × 1014 And gas molecules/cm2, this ionizer (122) associated with the extinguishing gas cluster in initial ionization due to monomer, GCIB (128) between the first and second gas cluster ion in the GCIB (128) effective in dissociating gas cluster ions in, completely dissociated the neutral beam acceleration (314) are observed throughout. VAcc Is, for example may be 30 kv, GCIB (128) has a curved potential is accelerated by the other. A pair of deflection plate (302 and 304) is GCIB (128) axis (154) disposed against the substrate. Deflector power (306) the electrical leads (308) through deflection plate (302) of positive deflection voltage (VD ) A number [...] substrate. Deflection plate (304) electrical lead (312) by, and current sensor/display (310) through an electrical grounding and connected thereto. Deflector power (306) number each other as soon as possible following disclosed. VD 0 Is from deflection plate (304) to said GCIB (128) ionization portion (316) (for example, thousands bolt) sufficient to completely deflect voltage can be adjusted. GCIB (128) ionization portion (316) deflection plate (304) obtained when a bias current, ID An electric lead (312) and display current sensor/display (310) flow substrate. VD When is 0, GCIB (128) and is bag-type, workpiece (160) and workpiece holder (162) moves to. GCIB beam current IB Is coupled to the workpiece (160) and said workpiece holder (162) and collected, electrical leads (168) and a current sensor/display (320) an electrical grounding through into the substrate. IB Includes a current sensor/display (320) expressed on a vehicle from the outside. Beam gate (172) includes a beam gate controller (336) by industrial (338) encoded through the number. Beam gate controller (336) any interval beam gate (172) is manually or electrically or mechanically opening a preset value an epoch disclosed. In use, VD Is is set to 0, which strike beam current I workpiece holderB Is measured with each other. Based on previous experience for predetermined GCIB process method, the process of the predetermined initial irradiation time is measured current, IB Determined based on. VD The measured beam current I is supplied to allB I fromD Moves to and fro, ID V is further increased overD Until does not increase with increased substrate. The point, initial GCIB (128) energy dissociated components including neutral beam (314) the workpiece holder (162) applied to a substrate. Then, beam gate (172) are closed and, workpiece (160) workpiece loading unit (not shown) of the existing method is the workpiece holder (162) to the yarns. Said beam gate (172) any initial radiation time implemented on the base. After examination interval, the workpiece is checked and, if necessary by adjusting the beam current I measured GCIB processing timeB Neutral beam processing based on desired period can be corrected. In the flash following, additional workpiece can be processed using a corrected exposure period. Neutral beam (314) is accelerated GCIB (128) initial energy repeatable fraction contains. Original GCIB (128) the remainder of the ion portion (316) a neutral beam (314) and number from the wetting ability, ground deflection plate (304) collected by the other. Neutral beam (314) number from wetting ability and improved signal portion (316) comprises a monomer ion and medium-sized gas cluster ions including gas cluster ion can be. During the monomer evaporation ionized cluster of influence, intra - beam collision, background gas collision, and other (they all are on a cluster by causing corrosion) separated but has a substantially neutral monomer charged particles broken cluster ion is causing other. The present invention is the victims of the treater material ionized and resulting suitable measuring method including measuring changes in ion mass ratio of the same by has been confirmed. Separated charged beam components is primarily medium-sized cluster ion as well as monomer ion made, some large cluster ion composed of disapproval possibility. As can be shown hereinafter, this using the neutral beam workpiece to particular excellent processing results obtained by processing. Figure 4 shows a form of the present invention embodiment according to neutral beam processing device using a neutral beam also for the measurement of thermal sensor (400) is the schematic diagram of the. Thermal sensor (402) has a low thermal conductive adhesion (404) by pivoting through a (412) attached to the rotary support arm (410) attached to the substrate. Actuator (408) is neutral beam (314) or GCIB (128) position blocking the heat sensor (402) for interrupting any not parking positions (414) between reversible rotational motion (416) by thermal sensor (402) operating other. Thermal sensor (402) is parking positions (414) when, GCIB (128) or neutral beam (314) irradiates the workpiece (160) and/or workpiece holder (162) for the investigation of path (406) continues along with each other. Thermal sensor controller (420) communicates heat sensor (402) the number and position of, thermal sensor (402) of the signal processing generated by s3. Thermal sensor (402) an electric cable (418) through thermal sensor controller (420) communicates with each other. Thermal sensor controller (420) in an electric cable (428) through dosimetry controller (432) communicates with each other. Beam current measurement device (424) is GCIB (128) the workpiece (160) and/or said workpiece holder (162) when the spindle is electrically (168) current flowing in (IB ) By using predetermined material. Beam current measurement device (424) an electric cable (426) a signal beam current measurement by dosimetry controller (432) in communication with the substrate. Dosimetry controller (432) is industrial (434) number by a signal transmitted by the beam gate (172) to set an open or closed state of number etched. Dosimetry controller (432) an electric cable (442) by deflector power (440) is a number and, the voltage of 0 GCIB (128) ionization portion (316) biasing plate (304) suitable for completely deflect positive voltage between deflection voltage VD[...] be a number. GCIB (128) ionization portion (316) deflection plate (304) when the spindle is, current I obtainedD Includes a current sensor (422) and measured by, electric cable (430) by dosimetry controller (432) communicates with other. In operation, internal lighting controller (432) communicates heat sensor (402) a parking positions (414) according to, beam gate (172) is opened, the entire GCIB (128) the workpiece holder (162) and/or workpiece (160) to the spindle VD A tft3. 0. Said dosimetry controller (432) is the beam current measuring device (424) from transmitted beam current, IB Recording substrate. Then, said dosimetry controller (432) is parking positions (414) from thermal sensor (402) thermal sensor controller moves (420) relayed through command by GCIB (128) to shut off. Thermal sensor controller (420) with its temperature at a predetermined measurement temperature (for example, 70 °C) lifted by measured by thermal sensor (402) and a sensor of temperature rising ratio calculating based on heating performance by GCIB (128) the energy flux measuring beam, then said calculated beam energy flux dosimetry controller (432) to communicate with a heat sensor (402) by the measured beam energy flux and beam current measuring device (424) to determine the corresponding beam current measured by a correction value. Then, said dosimetry controller (432) is parking positions (414) heat sensor (402) and the parking, cool it, GCIB (128) for the ionization of an electric shock by current ID Both deflection plate (304) moved into the bias plate (302) to positive VD Accesses application of command. Current sensor (422) holds the corresponding ID Measures, and dosimetry controller (432) communicates with the base. In addition, internal lighting controller thermal sensor controller (420) been relayed by said command by neutral beam (314) so as to block a thermal sensor (402) a parking positions (414) move to and from the reaction chamber. Thermal sensor controller (420) determined correction component and any thermal sensor (402) temperature rising ratio using neutral beam (314) the energy flux measuring beam, and moved through the temperature of the temperature at a predetermined measurement, said neutral beam energy flux dosimetry controller (432) in communication with the substrate. Dosimetry controller (432) is calculated fraction of neutral beam, this sensor (402) total GCIB (128) for neutral beam energy flux value (314) the ratio of the energy flux value are disclosed. In the normal operation of the, neutral beam fraction of about 5% -95% is achieved. In addition, before start processing, dosimetry controller (432) includes a current, ID Measured, IB And ID The initial value of current ratio between determines. In the process, I initialB /ID The moment I multiplied by the ratioD I measureB Used as a proxy for continuous measurement, dosimetry controller (432) are used to determine the number of processed by [...] dose. The, said dosimetry controller (432) is the entire beam current measurement number GCIB chamber (128) can be any beam relative to the workpiece as in processing can be compensating for the change. Said internal lighting controller for use in a particular beam desired processing time for computing uses a fraction of the neutral beam. Processes, processing time is for the collection of any beam variation in which the calibrated ID Can be adjusted based on measurement of. Figure 5 shows a diagram of the deflection plate number billion as components also dosimetry collected on deflection of the present invention embodiment using ion beam current according to form neutral beam processing device (500) is the schematic diagram of the. The reference briefly a also 4, 4 also shown in diagram internal lighting current, ID GCIB is (128) ionization portion (316) as well as, said current, ID Ion has a concave portion (316) deflection plate (304) when the spindle is reduced 2 obtained from an electron injection currents can be generated from an electron current due to the fact that 2. 2 Electron yield is high ion portion (316) in accordance with the distribution of the size cluster ion can be various. In addition, deflection plate (304) according to impact surface of the surface condition (clean etc.) can be various. The, 4 also in a diagram, ID The scale of GCIB (128) ionization portion (316) current due to an accurate representation of tastes. Then, the 5 also again referencing, GCIB (128) ionization portion (316) an improved measurement of the ionization portion (316) deflection plate receiving (304) a proximal surface of electronic suppressor grid electrode (502) by adding deflection plate (304) can be realized in. Electronic suppressor grid electrode (502) ionization portion (316) but very clear, number 2 suppressor power (506) which ball number by number 2 V voltage suppressorS2 Deflected by means of a plate (304) for negative biased. Typically, an electron efficient billion number approximately tens of bolt 2 VS2 Achieved by. 2 Billion electron release by number, deflector power (440) current loading is reduced and, GCIB (128) ionization portion (316) of current ID Display the accuracy of increased substrate. Electronic suppressor grid (502) is a dielectric support (504) deflected by means of a plate (304) which is isolated from the trigger and, being maintained. Figure 6 shows a diagram of the Faraday cup as components also dosimetry using a sample of form of the present invention embodiment deflection ion beam current collected according to neutral beam processing device (550) is the schematic diagram of the. In one form of the present invention embodiment is, ion portion (316) (as shown in fig. 5) sample (556) measurement (558) is captured. Faraday cup (558) collected sample current, IS For holds electrical leads (560) when current passes through the sensor (562) conductive and, measuring an electric cable (564) through dosimetry controller (566) communicates with a. Faraday cup (558) of the guide plate (304) collected by the current I (as shown in fig. 5)D Better current measurements obtained by measuring number [...] substrate. Current sensor (562) includes a current sensor (562) is ID I than in comparison with smallS In addition to low-sensitivity to accommodate increased current sensor (422) (as shown in also 5) substantially as previously described for and operate. Dosimetry (566) is less than the current measuring IS (Of Figure 5 ID On fertilizer formula) designed to accommodate other than dosimetry controller (432) (as shown in also 5) substantially as previously described for operating other. Figure 7 shows a uniform neutral beam for scanning a workpiece than hereinafter so neutral beam (314) space extension through a workpiece (160) scan the machine scanner (602) according to form of the present invention embodiment using neutral beam processing device (600) is the schematic diagram of the. Neutral beam (314) cannot be scanned by magnetic or electrostatic techniques to, processing a workpiece (160) is neutral beam (314) extension spatially than large, workpiece (160) uniform processing is needed, implanter (602) is neutral beam (314) through said workpiece (160) are used to scan. Implanter (602) is coupled to the workpiece (160) for maintaining workpiece holder (616) has. Said implanter (602) is neutral beam (314) or said GCIB (128) either the workpiece (160) and/or workpiece holder (616) to incident on disposed thereon. Deflection plate (302, 304) is GCIB (128) ionization portion (316) when deflecting the, workpiece (160) and/or workpiece holder (616) is neutral beam (314) d2. only. Deflection plate (302, 304) is GCIB (128) ionization portion (316) when the reservoir is not deflect, workpiece (160) and/or workpiece holder (616) is total GCIB (128) receives a. Workpiece holder (616) is electrically and insulator (614) from ground by insulated therefrom. Workpiece (160) and/or workpiece holder (616) GCIB on (128) due to incident beam current IB An electric lead (168) by beam current measuring device (424) conductive with each other. Beam current measurement device (424) is IB Measured, measurements dosimetry controller (628) communicating other. Implanter (602) is electronic cable (620) through mechanical scan controller (618) number by which the actuator including actuator base (604) has. Implanter (602) is paper surface of Figure 7 as shown, Y - direction (610) reversible moveable table arranged to Y - (606) and, X - direction (612) is moveable arranged table X - reversible (608) has. Y - arranged table (606) and X - arranged table (608) the movement of the machine scan controller (618) in the number of actuator base (604) in actuator is actuated by the substrate. Machine scan controller (618) an electric cable (622) through dosimetry controller (628) communicates with each other. Dosimetry controller (628) function of the dosimetry controller (432) previously described for functionality and machine scan controller (618) by communication with mechanical scanner (602) comprising both a number for the additional functionality. The neutral beam energy flux rates based on measuring, dosimetry controller (628) and a method for mechanical scan controller (618) and processing of a substrate to completely and uniformly to workpiece, workpiece (160) to the energy flux of the workpiece so as to maintain a pre-determined dose (160) in the process of workpiece (160) integrated number of complete scan for scanning and X - Y - complete scanning velocity is calculated and communication to each other. Using reflecting, and neutral beam [...] number and use of energy flux rate measurements, the scanning number algorithm, for example of the existing method GCIB processing tool and ion implantation tool conventional and generally are used. Neutral beam processing device (600) includes a GCIB (128) is passed where overall GCIB (128) the workpiece (160) and/or workpiece holder (616) to allow to issue the deflection plate (302, 304) to a number of the existing method GCIB processing tool can be used such as by the other genes of interest. Figure 8 shows a non-also is installed at the (107) of the present invention embodiment form according to the gas pressure in the active setting and number number [...][...] neutral beam processing device (700) is the schematic diagram of the. Pressure sensor (330) is installed at the pressure measurement data is non (107) from electric cable (332) through pressure controller (716) and incident, this pressure in non-is installed at the display substrate. Non is installed at the (107) is installed at the pressure in non (107) to gas flow in balance and vacuum pump (146b) θ1. pumping speed. Gas bottle (702) preferably comprises a source gas (112) gas as gas by the same non-sorts (704) and polyphthalamides. Gas bottle (702) is installed at the non (107) in gas diffuser (710) is installed at the non-through (107) as non by gas (704) to leak the remote operable with leakage valve (706) and gas feed tube (708) has. Said pressure controller (716) forms a pressure set point, pressure × beam path length set point (based on the desired beam path length), or gas in the form of target thickness setpoint input setpoint (system controller (not shown) or automatic manual entry by the entry) can be receiving. Set point pressure controller (716) are established for the, non-is installed at the (107) by an empty as gas (704) regulates the flow of the neutral beam processing device holds the step set-point. By using these as when pressure control system, vacuum pump (146b) is installed at the non-conventional (107) as the gas to be introduced into the non (704) in the presence of, non-is installed at the (107) in a preferred operating pressures adjust size to be lower than the basic pressure. Of the existing method GCIB basic pressure (128) capable of propagating the beam path without dissociation of excess length of selected to, in addition to the neutral beam processing device (700) of the existing method can be used as the processing tool. Figure 9 shows a charged portion and also for the separation of neutral beam portion of the present invention embodiment using electrostatic mirrors form according to neutral beam processing device (800) is the schematic diagram of the. Reflective electrode (802) and substantially transparent electrically grid electrode (804) beam axis (154) and the elements, parallel to each other and, in addition 45° disposed a angle. Reflective electrode (802) and substantially transparent electrically grid electrode (804) 2 both two electrodes through the neutral beam (314) for permitting passage of a beam axis (154) has focused on the Hall (each, 836 and 838). Mirror power (810) 9 as also shown in the polarity electrical leads (806 and 808) reflected by electrode (802) and substantially transparent electrically grid electrode (804) across a gap between the mirror electronic potential (VM ) A number [...] substrate. VM V isAcc + VR (VR Is ionized and accelerated gas cluster number having been transmitted prior to develop a thermal energy and potential required for the phase, conventional VR KV that would approximately be) to provide a slightly greater than the. Reflective electrode (802) and said substantially transparent electrically grid electrode (804) electric field is created between the shaft (154) at an angle approximately equal to 90° GCIB (128) ionization portion (814) deflect substrate. Faraday cup (812) the GCIB (128) ionization portion (814) collecting disposed thereon. Suppressor electrode grid electrode (816) measurement (812) 2 from servicing the electron escape. Suppressor grid electrode (816) is number 3 suppressor power (822) number by negative number 3 suppressor voltage V which ballS3 Biased on. Typically, VS3 Approximately tens of bolt are disclosed. GCIB (128) deflection so that the ionized portion (814) the switch is turned on in Faraday cup current, ID2 (And the GCIB (128) in current) electrical lead (820) when current passes through the sensor (824) flow into the other. Current sensor (824) comprises a current (ID2 ) Measures, electrical leads (826) by dosimetry controller (830) measured value passing through the substrate. Dosimetry controller (830) the function of the dosimetry controller (830) has a current sensor (824) I fromD2 Receives information about a current measurement, dosimetry controller (830) is deflector power (440) but not to a number, instead electric cable (840) through mirror power (810) a number and a number plower [...] dosimetry controller (432) enhancer is disclosed to efined. Mirror power (810) a bolt or 0 VM Configured to output either by, dosimetry controller (830) is total GCIB (128) or only a GCIB (128) neutral beam (314) only measurement and/or processing workpiece (160) and/or workpiece holder (616) whether or not the number transmitted from etched. Figure 10 shows a ground potential operating in said ionizer (122) and said workpiece (160) have the benefits of both of the present invention embodiment form according to neutral beam processing device (940) is the schematic diagram of the. Workpiece (160) is electrically a workpiece holder (162) by neutral beam (314) maintains the path of, this results in the low pressure container (102) electrically conductive support member attached to the walls (954) supported by the substrate. The, workpiece holder (162) and work piece (160) is is electrically grounded substrate. Accelerating electrode (948) is ionizer RFQ (126) to extract the gas cluster ion from, acceleration power (944) voltage potential V number by which ballAcc Gas cluster ion through to accelerate GCIB (128) and form. Ionizer (122) and the body of the ground, VAcc A negative polarity is are disclosed. Gas state number (118) pushed in approximately tens of neutral gas atom energy electronic - - small bolt. They since condensed to a cluster, the cluster sizes energy, proportional to N built by other. Sufficiently large cluster from a condensation process and significant energy, VAcc When voltage potential of accelerated through, each ion final energy state energy of neutral cluster number VAcc Exceeds a. Accelerating electrode (948) downstream of, delay electrode (952) is GCIB (128) ionization portion (958) used for speed reduction in order to ensure. Delay electrode (952) delay voltage power supply (942) by positive delay voltage, VR Biased at. Be kV delay voltage, VR Generally relates to GCIB (128) and deceleration both in ions, accelerating electrode (948) ensure the returned to a suitable. Permanent magnet arrangement (950) electrode and (948) attached to the accelerating electrode (948) may be released as a result of striking the returned ion electron magnetic billion number the number 2 a [...] substrate. Beam gate (172) is mechanical beam gate and, workpiece (160) placed upstream from the substrate. Dosimetry controller (946) is received by the process decodes the number dose delivered to the workpiece. Thermal sensor (402) is neutral beam energy flux to determine the neutral beam (314) blocking position or thermal sensor controller (420) of the neutral beam processing of the workpiece for parking positions to the yarns in number. Thermal sensor (402) includes a beam sensing line on, neutral beam energy flux measured electric cable (956) through dosimetry controller (946) provided between a substrate. General in use, dosimetry controller (946) includes a beam gate (172) closes, neutral beam (314) measuring to report the energy flux of the thermal sensor controller (420) decodes a command. Then, workpiece loading mechanism (not shown) of the existing method is a new workpiece holder positions a workpiece substrate. Measuring the energy flux based on the neutral beam, dosimetry controller (946) a pre-determined desired neutral beam energy dose [...] number to determine the scanning to time. Dosimetry controller (946) is neutral beam (314) of the heat sensor (402) and a command, during irradiation time calculated beam gate (172) is opened, then at the end of irradiation time calculated beam gate (172) workpiece closing (160) of the processing is ended. Figure 11 ionizer (122) is negative potential VR Operating in, ground potential form of the present invention embodiment according to neutral beam processing device operating in the workpiece (960) schematic of among others. Accelerating electrode (948) is ionizer RFQ (126) to extract the gas cluster ion from, acceleration power (944) presents a V number byAcc The electric potential of the GCIB toward gas cluster ion to accelerate (128) and form. GCIB obtained (128) and a potential application VAcc - VR Accelerated by 2000. Ground electrode (962) the GCIB (128) ionization portion (958) and parts, and accelerating electrode (948) returned to the other. Figure 14 shows a form of the present invention embodiment also according to neutral beam processing device (980) is the schematic diagram of the. The embodiment form neutral beam configuration from urea charged beam components rather than separation of electrostatic field and a magnetic field performed as to number 8 [...] shown also are disclosed. Again, the reference also 14, magnetic analyzer (982) separated by gaps present magnetic B - field magnetic surface. Support (984) includes a GCIB (128) of the magnetic analyzer (982) of the gaps B - field vector enters the GCIB (128) axis (154) to GCIB across (128) for magnetic analyzer (982) placed. Said GCIB (128) ionization portion (990) magnetic analyzer (982) biased toward by. Neutral beam aperture (988) having baffle (986) neutral beam (314) the neutral beam aperture (988) workpiece through (160) to be passed into a shaft (154) disposed against the substrate. GCIB (128) ionization portion (990) vacuum pump (146b) dissociating gas by pumping to a low pressure container (102) and/or baffle wall (986) the titanium alloy substrate. The gold film is also 12a - 12d also exhibits a total and charge separated gold film comparison of effect. In experimental setup, the gold film is deposited on the silicon substrate with the movement of the GCIB (charged and neutral components), neutral beam (beam to deviate from charged component), and only been processed by charged components including deflection beam. 3 Conditions may all be the same initial GCIB, 30 kv accelerated Ar GCIB derived from other. The beam path of acceleration for approximately 2 × 10 gas target thickness14 Min argon gas atoms/cm2. 3 For each of the two beam, exposure is 2 × 1015 A total beam ions (charged + neutral) transported by gas cluster ion/cm2 of total energy and been. The energy flux of each beam ratio was computed using thermal sensor, process the entire each sample period is equivalent to the same dose of GCIB (charged + neutral) receiving been adjusted to ensure total thermal energy dose. Atomic force microscope (AFM) × 5 microns by 5 microns 12a also includes a scanning and approximately 2. Average 22 nm is fixed wireless, Ra having the gold deposited film sample statistical analyses by a goniophotometer. 12B is also treated with AFM scan - 1b represents average total GCIB gold surface, approximately 1 Ra. 76 Nm to reduced. 12C is also charged beam by using only components for generation of AFM scan (neutral beam configuration after deflection from urea) - 1b represents the average, approximately 3 Ra. 51 Nm of the same class substrate. 12D is also only beam of neutral components by using only for generation of AFM scan (after charged component neutral beam to deviate from) - 1b represents the average, approximately 1 Ra. 56 Nm to the smoothing with each other. The entire GCIB sample deposited film (B) is (A) the forming disclosed. Neutral beam the treated sample (D) total GCIB is processed sample (B) the forming disclosed. Said charged beam sample into components (C) than a film substantially roughened disclosed. The result is a beam of neutral portion contributing to the smooth and, charged beam components 1b at operational conclusions supporting each other. 13A and 13b for measuring drug eluting coronary stent drug elution ratio also is also used cobalt - chromium coupon is deposited on the whole GCIB and neutral beam processing result of comparison of drug exhibits. Also 13a is 2 × 1015 The irradiation dose of 30 kv V gas cluster ion/cm2Acc Accelerated using argon GCIB (including said charged and neutral components) is irradiated using a sample by a goniophotometer. 30 Kv 13b is also of VAcc Accelerated using argon GCIB treater exhibits is irradiated using a derived from samples. Neutral beam 2 × 1015 For dosing gas cluster ion/cm2 (beam thermal energy flux sensors determined by equivalent) of thermal energy dose is equivalent to a 30 kv accelerated been irradiated. Both samples for approximately 50 microns diameter to enable transmission beam inspection array through the annular apertures near point been cobalt chromium mask. The entire beam through a mask illuminated sample of 300 × 300 microns 13a also includes a scanning electron microscope Image of microns are disclosed. Through the illuminated sample of 300 × 300 microns 13b also includes a neutral beam scanning electron microscope Image of microns are disclosed. Total beam passed through the mask is shown in sample 13a also caused by damage and etching by a goniophotometer. 13B also shown sample is not visible effect. Elution rate of saline to form a hole, such as the treated sample is also B sample (however, not mask) sample (however, not mask) such as 13a also compares the sample exhibits excellent elution ratio (delayed). Said neutral beam results desired elution delay effect processing is curved, while the entire GCIB (+ charged component neutral component) treatment of inferior weight losses of a medicament from the interface on the other (less delayed) conclusion that support the foot panel 50. elution ratio effect. On the surface of a drug attachment of auxiliary and, delayed drug elution drug causing deformation to accelerated GCIB [...] number derived from accelerated further turned to show reflecting capability, additional testing was performed. Approximately 1cm × 1cm (1 cm2) the transaction system drug deposition of copper into silicon for use as the substrate polished silicon wafer clean semiconductor - quality from tank number with each other. Drug rapamycin (catalog number R-a 5000, LC Laboratories, Woburn, MA 01801, USA) by dissolving 500 mg of rapamycin to formation of solution is 20 ml of acetone. Then, approximately 5 micro droplet drug solution using a deck each coupon l shared out. After evaporation and vacuum drying atmosphere solution, approximately 5 mm diameter annular rapamycin remaining are deposited on each silicon coupon. Various conditions in the transaction system neutral beam irradiation group was divided into non-irradiation (matching group) or radiation treatment. Then, said plasma to enable drug elution for group 4. 5 Time been located plasma of a human individual bath (bath per coupon). 4. 5 Has been completed, the transaction system plasma micropterus salmoides number and wetting ability, and washing of the deionized water, vacuum drying been. Weight measurement is a process steps have been performed in: 1) the amplified wave deposition silicon coupon weight; 2) deposition and after drying, coupon + deposition of a medicament weight; 3) post - irradiation weight; and 4) post plasma - elution and vacuum drying weight. Thus, for each coupon, hereinafter information is available: 1) each coupon of the deposited the drug loaded weight; 2) to each of the coupon are detected weight loss drug; and 3) weight loss of a medicament for each coupon plasma in elution city. For each irradiation coupon, when irradiated drug loss is a negligible level has been confirmed. Table 1 exhibits drug loss is to elution city in human plasma. Said his group is as follows: - not be carried out even negative contrast group; group 1 provided 30 kv of VAcc It is accelerated to a neutral beam derived from irradiation by the GCIB. Group 1 irradiated beam energy dose is 5 × 10 accelerated to 30 kv14 Gas cluster ion/cm2 dose (determined by thermal energy flux sensor beam energy equivalent) and equivalent; group 2 is V of 30 kvAcc It is accelerated to a neutral beam derived from irradiation by the GCIB. Said group 2 irradiated beam energy dose is 30 kv accelerated to 1 × 1014 Gas cluster ion/cm2 dose (determined by thermal energy flux sensor beam energy equivalent) and equivalent; in addition 25 kv 3 V of the groupAcc It is accelerated to a neutral beam derived from irradiation by the GCIB. 3 Irradiated beam energy dose is 5 × 10 25 kv accelerated to said group14 Gas cluster ion/cm2 dose (determined by thermal energy flux sensor beam energy equivalent) was equivalent. Table 1 (group 1 - group 3) when all neutral beam irradiation, 4 to human plasma. 5 Elution city drug loss is significantly less time than non-irradiated contrast group coming off by a goniophotometer. This neutral beam irradiation non-irradiated drug compares the attachment and/or reduced throughout a better drug elution ratio by a goniophotometer. P value for the optical fiber as a light (not disparate paired T - test) group 1 - 3 for each of the regulated neutral group, in human plasma was statistically significant difference in elution of drug retention. 15A - 15c also includes comparison of total beam (compared highly charged components + components) also exert preventive effects, which can be single crystal silicon wafer using conventional semiconductor application fills the separated on. Approximately silicon substrate 1. Initial 3 nm natural oxide layer. In case of separate, the entire silicon substrate GCIB (charged component and neutral components), (which number from the beam deflection by said hypoglycemic agent charged component) GCIB derived from neutral beam, and neutral components charged components from their after separation has been processed using a GCIB including only charged cluster beam. 3 Conditions may all be the same initial GCIB due derived, a GCIB is accelerated to 2% O 30 kv2 A mixture of 98% Ar on seal and disposed therein. Is relative to each 3, irradiated dose is 2 × 1015 A total beam ions (charged + neutral) gas cluster ion/cm2 of total energy and carried by him. The energy flux of each beam ratio was computed using thermal sensor, said GCIB process each sample period is equivalent to the total thermal energy of the entire (charged + neutral) receiving been adjusted to ensure that the same dose. 3 Fragment of sample after tem (TEM) imaging by been evaluated. 15A is also total GCIB (charged component and neutral beam components) of silicon substrate which is illuminated by the segment of the TEM Image (1000) are disclosed. Said upper end of the bottom surface of the radiation incident on the silicon substrate toward his Image from the Image. Prior to TEM Image segments, the segment of silicon substrate to a top surface (irradiated surface) and hereinafter for operation, in order to avoid damage to said substrate during process fragment coated epoxy an overcoat. TEM Image (1000) in, epoxy overcoat (1006) Image is visible on the top of the vehicle from the outside. Irradiation is performed for approximately 4. A minimum thickness of 6 nm amorphous region including silicon and oxygen (1004) formed on the substrate. As a result of irradiation, approximately 4. 8 Nm peak - to - peak deviation having rough interface (1008) is said amorphous region (1004) and said lower single crystal silicon (1002) formation between. The GCIB also 15b (charged characteristic) of silicon substrate irradiated charged component to a separate segment of the TEM Image (1020) are disclosed. Irradiation is performed from the upper end toward the silicon substrate has been incident on the bottom Image Image. For an TEM prior to fragment, the fragment of silicon substrate to a top surface (irradiated surface) and hereinafter for operation, in order to avoid damage to said substrate during process fragment coated epoxy an overcoat. TEM Image (1020) in, epoxy overcoat (1026) Image is visible on the top of the vehicle from the outside. Said irradiation is performed for approximately 10. The minimum thickness of the amorphous region comprising silicon and oxygen having 6 nm (1024) formed on the substrate. As a result of irradiation, approximately 5. 9 Nm peak and peak difference having rough interface (1028) is said amorphous region (1024) and said lower single crystal silicon (1022) formation between. 15C is also neutral portion (to a deflection separated by waste charged component) which is illuminated by segment of silicon substrate to TEM Image (1040) are disclosed. Irradiation is performed from the upper end toward the silicon substrate has been incident on the bottom Image Image. For an TEM prior to fragment, the fragment of silicon substrate to a top surface (irradiated surface) and hereinafter for operation, in order to avoid damage to said substrate during process fragment coated epoxy an overcoat. TEM Image (1040) in, epoxy overcoat (1046) Image is visible on the top of the vehicle from the outside. Said irradiation is performed for approximately 3. 0 Nm of silicon and oxygen and having a thickness substantially uniform amorphous region (1044) formed on the substrate. As a result of irradiation, that for difference between the peak and to atomic dimensions and having smooth interface (1048) is amorphous region (1044) and said lower single crystal silicon (1042) formation between. Also shown in 15a - 15c also results of semiconductor applications, derived from a GCIB from charge separation is accelerated by the GCIB using either the entire GCIB or reflecting accelerated charged the other end and a non-treated investigation compared throughout excellent interface between areas which are processed by a goniophotometer. In addition, data as to uniform oxide film can be formed on a silicon substrate treater derived from GCIB, such films can be associated with use of the existing method GCIB exhibits when the interface is not the inventive method. Without that are to be limited to a particular theory, the improvement said wetting ability and then the entire or most of a power medium-sized cluster number be obtained from cluster number well! with increased with each other. It is desirable that the treater form according to Figure 16 of the present invention embodiment utilizing silicon of pulp mass spectrometry (SIMS) depth profile of primary shallow boron 2 represents a result measured (1060) are disclosed. Said graph includes a nm as a function of the measured depth, boron atom/cc (atoms/cm3) boron concentration measured at (1062) decodes a plot. Also shown using 4 as to obtain device, 30 kv accelerated GCIB is 1% die boranes (B2 H6 ) And combination of 99% Ar formation. Chamber pressure is congestion 80psi (5. 5 × 105 Modulus of elasticity) and, nozzle flow 200 standard cm3/minutes (3. 3 Standard cm3/seconds) min. The entire beam current (neutral components charged components before separation to a deflection +) approximately 0. 55 Micro A min (μA). Pressure approximately 6 in the beam path. 9 × 10-5 Torr (9. 2 × 10-3 Modulus of elasticity) was maintained, forming an essentially argon/die [...] was and background gas pressure. Regions between said accelerator and said workpiece target thickness approximately 2/die boranes gas argon. 23 × 1014 Argon/cm2/die boranes gas monomer fluorescence, said accelerated neutral beam target essentially completely dissociated in neutral monomer consisting of an inhibin receptor. Electrostatic deflection using, all charged particles beam away from the beam axis to form an essentially completely dissociated the neutral beam deflection out been. The, neutral beam acceleration monomers been neutral argon/die boranes beam. Neutral beam deposition energy charged particles and said dosimetry compared highly charged particles (without charge separating by neutralizing) including both a accelerated (30 kv) 6 by GCIB. 3 × 1014 Gas cluster ion/cm2 irradiation dose deposited silicon substrate so that the total energy that can be transmitted to the neutral beam dose equivalent to compensate for been done with a thermal sensor. 16 Also shown in the GCIB depth profile obtained by ion implantation using the neutral beam derived from neutral beam throughout a very shallow implantation boron implantation by a goniophotometer. 1018 The depth measured from a very shallow junction depth about 12 nm/cm3 boron atom generated in junction depth. The integrated depth boron dose, approximately 7. 94 × 1014 Boron atom exhibits/cm2 area of depth. Figure 17 shows a GCIB also from oil neutral portion (to a deflection separated by waste charged component) of silicon substrate irradiated by a segment of the TEM Image (1100) are disclosed. Also similar to the device shown using 4, 30 kv accelerated GCIB is 1% die boranes (B2 H6 ) And 99% Ar formation to be compressed. Chamber pressure is congestion 88psi (6. 05 × 105 Modulus of elasticity) fluorescence, nozzle flow 200 standard cm3/minutes (3. 3 Standard cm3/seconds) min. The entire beam current (+ charged components before separation to a deflection neutral component) is approximately 0. 55 Micro A min (μA). Pressure approximately 6 in the beam path. 8 × 10-5 Torr (9. 07 × 10-3 Modulus of elasticity) was maintained, forming an essentially argon/die [...] was and background gas pressure. The, said workpiece between said accelerator beam expander regions argon/die boranes gas target thickness approximately 2. 2 × 1014 Argon/cm2/die boranes gas monomer fluorescence, said accelerated neutral beam target essentially completely dissociated in neutral monomer consisting of an inhibin receptor. Electrostatic deflection using, all charged particles beam axis to form an essentially completely dissociated the neutral beam at a distance from the beam deflection out been. The, said neutral beam acceleration monomers been neutral argon/die boranes beam. Dosimetry compared highly charged particles and neutral beam deposition energy charged particles (without charge separating by neutralizing) including both a accelerated (30 kv) 1 by GCIB. 8 × 1014 Gas cluster ion/cm2 irradiation dose deposited silicon substrate so that the energy that can be delivered to compensate for equivalent total neutral beam capacity become performed by using a thermal sensor. Irradiation is performed from the upper end toward the silicon substrate has been incident on the bottom Image Image. For TEM Image prior to fragment, the fragment of silicon substrate to a top surface (irradiated surface) and hereinafter for operation, in order to avoid damage to said substrate during process fragment coated epoxy an overcoat. Again, the reference also 17, TEM Image (1100) in, said epoxy overcoat (1106) Image is visible on the top of the vehicle from the outside. Said irradiation is performed for approximately 1. 9 Nm amorphous region having a substantially uniform thickness including silicon and boron (1104) formed on the substrate. As a result of irradiation, that for the difference between the peak and to atomic dimensions and having smooth interface (1108) is said amorphous region (1104) and said lower single crystal silicon (1102) formation between. Strain inducing species of compound semiconductor materials for introducing dopant such as prior art GCIB irradiation is also 15a shown in interface (1008) on the upper substrate that has been treated with said film in the same manner as more rough interface defining a known. Said step [ley person dopant to the film of the upper substrate and said die through the software quality of boron and semiconductor can be efficiently dope the molecules can be used. In the presence of intermediate size cluster ion beam techniques of the existing method GCIB causing coarse interface compares the, other dopant and/or lattice-strained species containing other gases, an upper limit of solid solubility for increasing dopant species, or surface for promoting one of amorphization by using, excellent high quality of the films in the interface between the substrate and the film can be obtained. To introduce dopant can be used alone or by mixing some dopant - containing gas die boranes (B2 H6 ), Triple base five boron nitride (BF3 ), Phosphine (PH3 ), Phosphorous (PF5 ), Elimination scene (AsH3 ), Is a method for new pen hit [phul base come the id (AsF5 ) And, in one example gas cluster to integrate non-number but can be used for dopant atoms. For lattice-strained species alone or may be used by mixing some gas silage (GeH4 ), Germanium the tetra [phul base come the id (GeF4 ), Silane (SiH4 ), Silicon tetra fluoride (SiF4 ), Methane (CH4 ) The pin is. To promote the amorphization can be used singly or by mixing some noble gas is argon (Ar), silage (GeH4 ), Germanium the tetra [phul base come the id (GeF4 ), And fluorine (F2 ) But, not one number. Dopant solubility can be used alone or by mixing some gas to promote silage (GeH4 ) And germanium the tetra [phul base come the id (GeF4 ) Are disclosed. Dopant for improving solubility dopant - containing gas, a gas containing lattice-strained species, in a non-refined rice wine containing gas, and/or other species containing gas (and optionally an inert or other gases) is associated with said accelerated neutral beam process can be used in combination for the Internet simultaneously formed. 17 Also in, its object digit display (1108) is lead line connected to the drawing having different background contrast for the region in order to maintain color corresponding to the substrate. Figure 18 shows a GCIB also from the oil treater accelerated silicon on silicon dioxide (SiO2 ) Film etching, etching silicon substrate is obtained depth profile measurement graph (1200) is shown as follows. Also shown is such as to obtain a device 4, 30 kv accelerated GCIB is been formed using argon. Chamber pressure is congestion 28psi (1. 93 × 105 Modulus of elasticity) and, nozzle flow 200 standard cm3/minutes (3. 3 Standard cm3/seconds) min. The entire beam current (+ charged components before separation to a deflection neutral component) is approximately 0. 50 Micro A min (μA). Said accelerator and said workpiece in an area between the target thickness argon gas for approximately 1. 49 × 1014 Monomer/cm2 and argon gas, said accelerated neutral beam target essentially completely dissociated in a neutral monomer consisting of an inhibin receptor. Electrostatic deflection is formed, all charged particles to form beam side at a distance from the beam deflection out of the treater been. The, been essentially neutral beam acceleration neutral argon monomer beam. The dosimetry using said charged particles and the neutral beam deposition energy is thermal sensor compared highly charged particles (without charge neutralizing base member) including both accelerated (30 kv) 2 by GCIB. 16 × 1016 Gas cluster ion/cm2 irradiation dose deposited silicon substrate so that the total energy that can be transmitted to the neutral beam dose equivalent correction can be performed to have been found. Silicon dioxide on a silicon substrate (SiO2 ) Film (approximately 0. 5 Microns thickness) is partially narrow (approximately 0. Width of 7 mm) are masked and the polyimide film tape strip, then accelerated neutral beam has been irradiated by. After irradiation, said polyimide tape number would take place. The reference also 18 again, depth profile measurement graph (1200) is obtained from the neutral beam etching due to acceleration, said SiO2 Film (silicon substrate) and a direction along the surface of said polyimide film tape by masked area, stepwise profile generated using TENCOR Alpha provided Step 250 to measure been ginned cotton orgin. Plateau (1202) is polyimide film (film wetting ability and cleaning after number) SiO below2 Film represents non-adherent surface, while region (1204) exhibits the etched portion. Said accelerated neutral beam depth profile measurement graph (1200) shown in produced in 0. 5 SiO microns2 The entire film and an additional 1. 9 Microns approximately 2 lower said determining a display silicon substrate. 4 Microns (µm) obtain an etching depth of. Argon and other inert gas are used as a source gas by physical means can be etched disclosed. In addition, reactive source gas including source gas or reaction gas by using mixing, reactive etching is done using the neutral beam can be. Be used mixed with an inert gas alone or stage the cause of a usual oxygen (O2 ), Carbon dioxide (CO2 ), Nitrogen (N2 ), Ammonia (NH3 ), Fluorine (F2 ), Chlorine (Cl2 ), 6 Fluorinated sulfur (SF6 ), Parts-(CF4 ), And other condensable halogen - containing gas are disclosed (grudge [eps negative number). Also 19a and 19b is also derived from neutral is accelerated GCIB is generated as shown in the production of single-crystal semiconductor material amorphous layer TEM Image are disclosed. For an TEM prior to fragment, hereinafter for operation and the top surface of each sample fragment, said fragment upon process so as to avoid the coated surface of the epoxy an overcoat. The native oxide when exposed bare silicon formed simultaneously in air or water. 19A is also natural SiO2 Segment of silicon substrate having a film of TEM Image (1220) are disclosed. TEM Image (1220) in, said epoxy overcoat (1226) Image is visible on the top of the vehicle from the outside. Thin (approximately 1. 3 Nm) native oxide film (1224) the lower silicon substrate (1222) shown on a substrate. 19B is also derived from accelerated argon GCIB neutral beam of silicon substrate TEM Image representing the result of the radiation (1240) are disclosed. 19A also shown as to obtain a native oxide film having been cleaned in an aqueous solution 1% hydrofluoric acid for a native oxide silicon wafer number alone. Cleaned silicon substrate formed from 30 kv accelerated argon GCIB (to a deflection from a beam number for reparing over charged component) is irradiated using a treater been derived from. Said heat sensor irradiated dose 5 × 1014 Gas cluster ion beam (charged neutral +) ions/cm2 - of total energy and energy carried by the general overall match 5 × 1014 Gas - cluster ion beam with respect to the total energy deposited by match those of the neutral beam/cm2. Again, the reference also 19b, TEM Image (1240) includes determining said silicon substrate material (1242) placed on or above is accelerated neutral beam irradiation 2 formed by the surface of silicon. 1 Nm thickness of amorphous film (1244), said epoxy overcoat (1246) exhibits. As a result of irradiation, that for difference between the peak and to atomic dimensions and having smooth interface (1248) is said amorphous film (1244) and said lower crystal silicon material (1242) formation between. This inert gas, argon (Ar) can be used to form amorphous semiconductor material layer is determined by a goniophotometer. Forming reflecting accelerated for the type of the present invention embodiment by using them can be used to form amorphous layer is xenon (Xe) some other gas (negative number grudge [eps), silage (GeH4 ), And germanium tetra fluoride (GeF4 ) Having a predetermined wavelength. The source gas is mixed with argon or other inert gas alone or can be. Also in 19b, it object digit display (1248) is lead line connected to the drawing having different background region in order to maintain the contrast color corresponding to the substrate. Also 20a and 20b also GCIB is derived from accelerated growth of oxide film on silicon by using reflecting TEM Image as shown are disclosed. For an TEM prior to fragment, hereinafter for operation and the top surface of each sample fragment, said fragment upon process so as to avoid the coated surface of the epoxy an overcoat. The GCIB 20a also representing the result of the radiation derived from accelerated neutral beam of silicon substrate TEM Image (1260) are disclosed. 19A also shown as to obtain a native oxide film having been cleaned in an aqueous solution 1% hydrofluoric acid for a native oxide silicon wafer number alone. Then, bare silicon substrate is 2% O said cleaned2 On 30 kv accelerated GCIB formed from 98% Ar of source gas mixture (which number from the beam deflection by said hypoglycemic agent charged component) is irradiated using a treater been derived from. The neutral beam irradiation energy dose is 2. 4 × 1013 Ions of gas cluster ion/cm2 of 30 kv accelerated GCIB on equivalent (determined by thermal energy flux sensor beam energy equivalent) min. Again, the reference also 20a, said TEM Image (1260) includes determining said silicon substrate material (1262) placed on or above the surface of the accelerated neutral beam irradiation silicon formed by 2 nm thick oxide film (1264), epoxy overcoat (1266) exhibits. As a result of irradiation, to atomic dimensions having peaks and difference that for smooth interface (1268) is said oxide film (1264) and determining said lower silicon material (1262) formation between. In also 20a, said it object digit display (1268) is lead line connected to the drawing having different background region in order to maintain the contrast color corresponding to the substrate. The GCIB 20b also representing the result of the radiation derived from accelerated neutral beam of silicon substrate TEM Image (1280) are disclosed. 19A also shown as to obtain a native oxide film having been cleaned in an aqueous solution 1% hydrofluoric acid for a native oxide silicon wafer number alone. Then, bare silicon substrate is 2% O said cleaned2 On 30 kv accelerated GCIB formed from 98% Ar of source gas mixture (to a deflection from a beam by the number which would charged component) is irradiated using a treater been derived from. The neutral beam irradiation energy dose to 4. 7 × 1014 In ions on 30 kv accelerated gas cluster ion/cm2 of GCIB equivalent (determined by thermal energy flux sensor beam energy equivalent) min. Again, the Image 20b also referencing said TEM (1280) crystal silicon substrate material (1282) placed on or above the surface of said formed by the accelerated neutral beam irradiation 3. 3 Nm thick oxide film (1284), epoxy overcoat (1286) exhibits. As a result of irradiation, to atomic dimensions having peaks and difference that for smooth interface (1288) is oxide film (1284) and determining said lower silicon material (1282) formation between. This oxygen including neutral beam forming an oxide layer at the surface of the semiconductor material can be used to by a goniophotometer. By changing the thickness of a film grown can be a radiation dose information to. In other reactive species including source gas treater accelerated by using form, other types of film can be grown on semiconductor or other surface, for example (negative number grudge [eps) oxygen (O2 ), Nitrogen (N2 ), Or ammonia (NH3 ) Is argon (Ar) or other inert gas and can be used in combination or alone. In 20b also, it object digit display (1288) is lead line connected to the drawing of the region in contrast to having to maintain different background color corresponding to the substrate. Figure 21 shows a treater accelerated GCIB also derived from silicon substrate obtained after deposition of a film of carbon such as diamond depth profile measuring graph (1300) when a is etched. Also shown using 4 as to obtain device, 30 kv accelerated GCIB is 90% 10% argon and methane (CH4 ) Of source gas mixture formation. Said accelerated neutral beam target essentially completely dissociated in neutral monomer consisting of an inhibin receptor. Electrostatic deflection using, methane/argon beams all charged particles beam axis at a distance from the beam deflection out of neutral been. The, been essentially neutral beam acceleration neutral methane/argon monomer beam. Dosimetry charged particles and said neutral beam deposition energy is compared highly charged particles (without charge separating by neutralizing) including both accelerated (30 kv) 2 by GCIB. 8 Micro A gas cluster ion/cm2 irradiation dose deposited silicon substrate so that the total energy that can be delivered to the treater equivalent to compensate for been done with a thermal sensor. Silicon substrate is partially narrow (approximately 1 mm width) are masked and the polyimide film tape strip, then the substrate and mask such as diamond carbon film to deposit 30 minutes accelerated neutral beam has been irradiated. After irradiation, mask is number would take place. Again, the reference also 21, said depth profile measurement graph (1300) is obtained from the neutral beam due to an acceleration, a direction along the surface of silicon substrate and said polyimide film tape shielded by the contact been produced by using step by step for measuring a profile of ginned cotton orgin TENCOR Alpha provided Step 250. The planar region (1302) of silicon substrate below the polyimide film (film number being resized and cleaning after) represents the original surface, while region (1304) deposited carbon such as diamond exhibits the portion. Accelerated neutral beam approximately 2. 2 Microns (µm) produce the smaller depth profile measurement graph (1300) obtain shown in step. Speed GCIB current (the short defined by an intervening thermal sensor as energy equivalent) micro A/cm2 of approximately equal to 0. Been 45 nm/seconds. In other to test, in CH argon4 5% Mixture and of 7. As to the results of the 5% mixture is but, in CH can comprise source gas generates deposition4 Resulting in lower percentage. Selection of a gas mixture and capacity having prescribed thickness allows repeatable deposition of the film. CH4 Alone, or argon or other inert gas acceleration neutral monomer for monitoring the mixing of the carbon source gas for depositing efficient are disclosed. Acceleration neutral monomer system using for deposition of films can be used singly or mixed with an inert gas of other conventional gas silage (GeH4 ), Germanium tetra fluoride (GeF4 ), Silane (SiH4 ), And silicon tetra fluoride (SiF4 ) Are disclosed (grudge [eps negative number). Figure 22 an optical window, display and/or touch - screen substrate, microscopy slide and a cover slip, generally of the type using filter application such as borosilicate optical glass (voice synthesizer type (0211)) of the existing method of cleaning the surface of a sample of atomic force microscope (AFM) force of liquid and polished sample 500nm × 500nm region obtained by evaluating the conventional map (1320) by a goniophotometer. Said surface is 0. 27 Nm on average equivalent 1b, RA With, the front part of the nm approximately be number of projections and depressions (1322) exhibits. Derived from accelerated GCIB essentially completely dissociated treater and this surface treatment of the total peak - to - valley satisfactory smoothing and planarizing otherwise to reduce the deviation substrate. Voice synthesizer type (0211) of the existing method cleaned sample and polished glass sample is formed from the source gas argon GCIB accelerated 30 kv (to a deflection from a beam by the number which would charged component) is irradiated using a treater been derived from. The neutral beam to said irradiation energy dose 1 × 1014 In ions on 30 kv accelerated gas cluster ion/cm2 of GCIB equivalent (determined by thermal energy flux sensor beam energy equivalent) min. Figure 23 neutral beam irradiation glass obtained by evaluating the surface of AFM 500nm × 500nm region map (1340) by a goniophotometer. Said surface is non-irradiated material of approximately half 1b 0. 13 Nm on average equivalent 1b, RA The. Said surface consists essentially of projections and depressions is free. Total peak to valley variation of approximately half approximately about 2 nm - non-irradiated optical surface are disclosed. Separation of charged components compared highly accelerated by GCIB from components derived from a plurality of application in the field of semiconductor processing reflecting accelerated using an indirectly-enabling can be, formed by said interface between said layer and at least one of the existing method GCIB irradiation lower result obtained by irradiation with a superior and, it has the advantage of additional very smooth. GCIB or neutral beam processing have the benefits from another optical application number relative to optical film to a door on the optical substrate. Optical device generally into thin film by coating them various promotion or performance to improve rejections. Thin film optical filter for producing such optical films call [lik die protective coating, anti-reflective coating, reflector coating, or a combination thereof can be used as. Said coating is thin metal film (for example, aluminum or gold), dielectric films (for example, magnesium fluoride, calcium fluoride, or metal oxide) or shiny, or electrostatic properties for promoting or displaying or be a conductive film functioning as a touch-sensitive panel. The thin film coating is a physical vapor deposition method (PVD) techniques or other of the existing method for purposes it is deposited is detected by the flow tides. This is the end of a general door number without interface film substrate or subsequent layers, the not be desirable as well as not attached to it are disclosed. The substrate material as well as the number of the existing method and other PVD techniques dissimilarity of door set down by strong bonding coating so that the substrate material does not generated. GCIB or neutral beam processing of the existing method is used coating than strongly attached on optical substrate (optical device on or other optical coating on) for producing thin film coating can be used. To achieve higher adhesive efficiency, GCIB or neutral beam strongly integrated interface layer converts the initial seed coating the substrate, to form a coating on said interface layer then end desired thickness can be used. In many facts and neutral beam both GCIB can be used but, when either of the substrate or coating in dielectric or low conductive material, embedded in the neutral beam ion beam processing of charge transport damage resulting in having the aforementioned preferred due to advantages of avoiding it. GCIB and neutral beam processing ion beam when the bottom surface of the existing method when both monomer generated significant without damaging the coating achieves improved adhesion. Also 24a - 24d is also strongly on optical substrate is detected by the GCIB or neutral beam attached optical coating of the present invention embodiment in schematic representing step for forming form among others. Of the existing method such as PVD is also 24a by a multiplexing technique pre-applied optical coating material (1404) optical substrate having a very thin film coating (1402) representing a schematic (1400) are disclosed. Adhesion characteristics of the existing method (can be suitable for applications where intended) having optical substrate (1402) optical coating material (1404) interface between (1406) flow tides. Said substrate (1402) and said optical coating material (1404) must not illustrated as a thickness of a predetermined ratio. GCIB and neutral beam beam source material, used beam acceleration potential, and beam present (but does not exist in the cluster completely dissociated neutral beam) through any cluster size range depending on the characteristics. Neutral beam dissociated, for example approximately about 1 provided 3 nm optical coating material may have a usual penetration depth, while cluster containing GCIB and neutral beam approximately about 2 provided 20 nm (depending on both the coating materials and beam parameters) may have through-depth. The embodiment of the present invention in the form of method, optical coating material (1404) parameter of the thickness of the chamber number beam type optical coating material (1404) through the entire thickness of the, in addition optical substrate (1402) selected to pass through to a short distance. The GCIB or neutral beam being empty, is also 24b (1412) of optical coating material (1404) irradiation of the schematic representing (1410) are disclosed. Said beam (1412) features include beam (1412) particles in at least a part of said optical coating material (1404) completely through it is incident on the optical coating material to said (1404) with respect to the thickness of selected. The devices include through of the existing method interface (1406) be approximately about 1 - nm optical substrate via distance (1402) passing through the substrate. Irradiated GCIB dose or neutral beam dose is, for example at least 5 × 10 30 kv accelerated GCIB13 Ion/cm2 and, or neutral beam when, for example at least 5 × 1013 Ions of the GCIB energy on 30 kv accelerated gas cluster ion/cm2 having equivalent are disclosed. Aforementioned 24c is also obtained from irradiation of exhibiting a schematic (1420) are disclosed. Optical coating material (1404) thin film and the beam optical substrate interaction of atoms (1402) from optical coating material (1404) is driven to the mixture region (1422) is formed, wherein optical coating material (1404) and optical substrate (1402) mixed closely of atoms, atoms of said mixture in the upper region more elevated, optical coating material whose density gradient in said mixture has low areas region approaches 0. Mixture region (1422) as well as of the existing method of atoms in the upper area of mixture region (1422) than optical coating material (1404) much strongly the optical substrate attached optical coating material (1404) of atoms causes hereinafter for a strong bond. Mixture region (1422) to form a beam of penetration number one must enable optical coating material thickness (1404) desired thickness of the thinned too processor-executable instructions for optical coating and can be, in this case additional optical coating properties desired deposition of subsequent optical coating material needs to be disclosed. 24D also has an optical coating material (1404) + optical coating material (1432) net thickness needed for desired optical effect increasing to a thickness for terminating an optical coating material (1432) additional deposition layer as shown in a schematic (1430) are disclosed. Material (1404) and material (1432) generally comprises the same material but, they may be different materials, stage 2 strong attachment therebetween of material formed on the substrate. In one case in, material (1404) is said optical substrate material and said top material (1432) non-like but with both, said material (1404) is chemically bonded to the top material with both said substrate and said can be selected to, while said optical substrate has a high affinity thereof can not built up in the top material and each other. 2 Of the same material (material (1404) and material (1432)) when, atoms of the similarity is typically of the existing method interface (1406) (24a also is shown) occur in said 2 between two layers of a stronger attachment than 2n.. In addition have the benefits from the deterioration of the GCIB or neutral beam processing of material on door number applications relative to atmosphere. For example, optical and other device generally preferred optical characteristics but, when exposed to normal atmosphere state material degradation them feature difference is measured for plural times. This avoiding exposure atmosphere is connected with the practical usefulness of their long service life or useful shelf life or useful number valve timing of the other. This material surface oxidation, moisture is formed between the atmosphere, the surface of the material at the interface atmosphere or other degradation caused by a melting reaction can be disclosed. Non-linear optical (NLO) material suitable for use in material many particular example, three boric acid lithiums (LBO), LiB3 O5 Are disclosed. In NLO applications, but sometimes other material having an LBO is available, it ambient or other deterioration by moisture that it becomes, lying by the source pin is negative. In many applications this number of efficient lifetime relayed or, in other applications the number one storage atmosphere - life service prior to placing the material deterioration occurs. Conventional, surface coating is added to reduce the rate of moisture absorption number number [...] moisture barrier has been used. However, such an extent that they need not always efficient and, in particular a compound of the optical power density (for example, laser applied) in case of a coating is peeled or otherwise efficiency deterioration over time and may cause a decrease in disclosed. As described above, the coating of a film for improving the adhesion of the GCIB acceleration aforementioned attachment techniques and the neutral beam can be improved by using GCIB. However, the neutral beam irradiation surfaces reactivity and/or moisture or an acceleration GCIB reduce sensitivity can be used to thin barrier. If necessary, barrier can subsequently formed by irradiation of the existing method can be used in combination with a barrier coating applied. Many facts but both be used in a GCIB and neutral beam, the treated material said either dielectric or low conductive material and, due to the aforementioned inherent advantages of neutral beam with said ion beam processing it in charge transport preferably in avoiding damage resulting. Conventional deterioration rapidly when exposed directly to atmosphere in the immediate vicinity of LBO surface etched. Also degradation due to exposure to atmosphere also 25a and 25b is indicative of the surface of the untreated LBO optical components atomic force micrograph map among others. 25A also generally comprises cooling device is attached to the conventional peripheral laboratory building in exposed to an atmosphere (less than 1 time during) LBO exhibits optical surface of an iron material. Said seed crystal 1 micron × 1 micron square area presents a conventional map. The features of generally cylindrical linear scratches polished surface leaving a substrate. Surface degradation due to exposure to atmosphere of the beginning of the rotation bumps numerous hygroscopic LBO material exhibits. Said surface is approximately 0. Average 1b 30 nm, exhibits Ra. 25B is also exposed to the same point in the same peripheral laboratory atmosphere of LBO material 100 time piece 1 microns square area presents a usual × 1 microns. Used for average - 1b and surface degradation substantially shown, designed to divert the direction of bump increased area and height Ra grown due to approximately 3. 58 Nm of the same class substrate. 26A and 26b is also decreased degradation due to exposure to atmosphere also GCIB causing accelerated using the neutral beam LBO optical components derived from processed surface of atomic force micrograph map among others. 25A 26a also has the same optical components of an intervening LBO also presents a surface area of an iron material. Generally cooling device is attached to the building in a laboratory atmosphere peripheral to short (less than 1 during time) after exposed, the memory part of the surface of the neutral beam irradiation processing with each other. After the irradiating step, it has been shown also 26a regions of a portion of the atomic force microscope Image. Immediately after it is usual 1 microns × 1 microns of the main chain or determined said map by a goniophotometer square area. Linear cylindrical scratch longer do not appear, said surface is approximately 0. Average 1b 26 nm, exhibits Ra. Said surface of the V regions of 30 kvAcc Derived from using accelerated argon GCIB been irradiated using a treater. Said neutral beam 5 × 1018 Argon atoms/cm2 of neutral atoms dose has been irradiated. Other experiments 2. 5 × 1017 The argon atoms/cm2 neutral atoms dose as low as an efficient (alternatively, efficient GCIB dose the profile of acceleration as well as argon atoms of the dose number [...] having combination of cluster ion size and dose) indicating that the other. 26B is also exposed to the same point in the same peripheral laboratory atmosphere after a piece of conventional 1 × 1 microns LBO material 100 in time by a goniophotometer square area microns. The progressing - 1b are as low surface degradation said average, Ra approximately 0. 29 Nm are disclosed. Neutral beam irradiation moisture absorption and deterioration is narrowed for the type of other optical material to induce a hygroscopic LBO shallow surface modification of functionally useful life extending reaction chamber. 100 Time exposed at the end of atmosphere, irradiation surface has only 1 time of material of equivalent or better than the original exposed only atmosphere than quality by a goniophotometer. Neutral beam silicon - carbide semiconductor layer on silicon substrate from processing have the benefits other application to improve or otherwise functions as a silicon substrate, and harder than, and apply the chemicals, which damage the LAN, refractory and than, improved chemical property, has a different lattice constant, and can function as a basis of subsequent layer growth, deposition of a subsequent material (lattice matching or improved bond) can function as a substrate for lithography silicon for SiC or SiC surface [...] numberX (0. 05<X<3) relative to formation of. 27A also includes a single crystal silicon substrate may be, it will be a high purity semiconductor number bath to be used for the silicon substrate (1502) representing a schematic (1500) are disclosed. Silicon substrate (1502) illustrated as a thickness of a predetermined ratio must not disclosed. Neutral beam beam source material, used beam acceleration potential, and beam (but does not exist in the cluster is completely dissociated neutral beam) present in any cluster size range depending on the characteristics of through. Neutral beam dissociated, for example approximately about 1 provided 3 nm having usual optical coating material to a penetration depth, while cluster containing neutral beam approximately about 2 provided 20 nm (depending on the target material and beam parameters) may have through-depth. Also 27b is neutral beam (preferably dissociated neutral beam) line beam (1512) by silicon substrate (1502) irradiation of the schematic representing (1510) are disclosed. Said beam (1512) features (including acceleration potential and dose and source gas) is silicon substrate (1502) while penetrating the at least one silicon atom per a predetermined desired with a depth of about 0 carbon atoms. 05 - C of about 3: Si ratio implanted region formed on the implanting carbon atoms to provide a suitable amount. Carbon - carbon atoms to a silicon containing source gas (preferably methane) used for the beam number [...]. Said graft to the desired thickness and carbon: at least one silicon atom ratio (non-reflected from the target object sound) implant layer formed on the substrate. The preferred channels for irradiating the neutral beam dose and acceleration potential to 8.5, for example gas cluster ion beam or dissociated treater neutral - prior to forming 5 a-50 kv accelerated gas cluster ion which are formed from about 1 × 10 - acceleration with a transposition14 About 5 × 10 -16 Carbon atoms/cm2 (including neutral methane cluster and/or monomer relation) are disclosed. Aforementioned 27c is also obtained from irradiation of exhibiting a schematic (1520) are disclosed. Silicon substrate (1502) the interaction of carbon and hydrogen atoms and beam surface of silicon substrate (1502) exists on the implant layer (1522) is formed, fluorine atoms to carbon atoms and the silicon substrate (1502) mixed with each other. Carbon and hydrogen atoms and at least one silicon atom is separated layer while leaving the other implant layer a power up. Said implant layer is carbon atoms which can be interrupted by, carbon: high silicon sufficient provided with non-reflected from the target object disclosed. 27D also communicates heat processing after implanted layer (1522) (also 27c) effects of heat treatment (annealing) as shown on the schematic (1530) are disclosed. Said implant damage by annealing heat treatment, for moving into carbon lattice substituted site (according to publicly known techniques) to a temperature sufficient - [...] number can be a furnace or a time processing device performed in argon atmosphere or other inert atmosphere preferably using radiant heat. Said annealed heat treatment layer (1532) in crystalline form is substantially recovered substrate. Neutral beam from processing consecutively fabry k [thing other uses silicon device in a process, or a fabrication in a process for transmitting and method and apparatus for strengthening said pattern, cured surface carbide or other materials and processes (in particular, it became grudge paper number heat micro fabrication) a photomask by executing such as SiC or SiC onto silicon substrate tearoom waitress stress lithography methodX (0. 05<X<3) relative to formation of. Also 28a, 28b also, also 28c, 28d also, also 28e, 28f also, and also constituting a device improved micro - 28g fabry k [syen such as required without hard mask pattern on a substrate to form a photoresist GCIB process derived from treater accelerated in step schematic representing among others. Number jaw or other micro - [...] 28a is also used for semiconductor device may be an amorphous or single crystal silicon substrate, the silicon substrate it will be a high purity (1602) indicating (for example) a schematic (1600) are disclosed. Silicon substrate (1602) shown the thickness of the constant ratio must not disclosed. Contact template (1604) is silicon substrate (1602) it over and placed in contact with the body. Contact template (1604) opening in substrate (1602) subsequent patterned substrate for processing (1602) delivers to transfer a desired pattern. 28B also includes a neutral beam (preferably dissociated neutral beam) line beam (1612) by silicon substrate (1602) irradiation of the schematic representing (1610) are disclosed. Said beam (1612) features (including acceleration potential and dose and source gas) contact is template (1604) passes through the openings in it to take on the silicon substrate (1602) in a predetermined desired depth injecting and passing at least one silicon atom per carbon atoms (preferably about 0. 5 - 1. 5 Carbon atoms per silicon atoms) about 0. 05 - C of about 3: Si ratio to provide a suitable amount of implanting carbon atoms. A silicon containing source gas (preferably methane) carbon - carbon atoms [...] number are used for the beam. Said desired thickness graft (beam acceleration and dose the previous selection of minutes by about 1 - 3 nm of the number can be very shallow and sufficient strength can be negative) having implanted layer (non-reflected from the target object sound) and silicon substrate (1602) the patterned area and/or region (1614) desirable carbon in: at least one silicon atom ratio (non-reflected from the target object sound) implanted layer formed on the substrate. The neutral beam dose and acceleration potential range of irradiation, for example gas cluster ion beam or dissociated treater neutral - prior to forming 5 a-50 kv accelerated gas cluster ion which are formed from about 1 × 10 - acceleration with a transposition14 About 5 × 10 -16 Carbon atoms/cm2 (including neutral methane cluster and/or monomer relation) are disclosed. Silicon substrate (1602) on carbon - containing patterned area and/or region (1614) to form, said contact template (1604) additional number is encoded prior to wetting ability. Said silicon substrate (1602) is optionally carbon - containing patterned area and/or region (1614) can be heat treated to form. Selective irradiation of said any damage by annealing heat treatment, region (1614) in temperature sufficient to enhance crystalline - (according to publicly known techniques) can be a furnace or a number [...] time processing device performed in argon atmosphere or other inert atmosphere preferably using radiant heat. Also 28c is arranged alternative pattern template representing a schematic (1620) are disclosed. Contact template rather than projection template (1622) beam (1612) by silicon substrate (1602) are detected by the irradiation of silicon substrate (1602) and spaced from the. Beam (1612) neutral particles in template (1622) passes through the openings in, silicon substrate (1602) by irradiating the implanted area and/or region (1614) is formed, it is silicon substrate (1602) via the at least one silicon atom per a predetermined desired depth or through an area in which the carbon atoms (preferably about 0. 5 - 1. 5 Carbon atoms per silicon atoms) about 0. 05 - C of about 3: Si ratio amount to 1e14 ions adapted to carbon atoms. Silicon substrate (1602) on carbon - containing patterned area and/or region (1614) to form, projection template (1622) additional number is encoded prior to wetting ability. Silicon substrate (1602) is optionally carbon - containing patterned area and/or region (1614) can be heat treated to form. Selective thermal treatment is an argon atmosphere or other in an inert ambient irradiation of any damage by annealing region (1614) to a temperature sufficient to promote crystallinity in - (according to publicly known techniques) can be a furnace or a number [...] time processing device preferably using radiant heat. Also as shown in patterned area and/or region containing carbon - 28b or 28c also to form, they are used as etching mask to number of addition processing under [e. Said 28b or 28c is also seen 28d also obtained from subsequent processing of patterning structure representing a schematic (1530) are disclosed. 2 Difference beam, preferably neutral beam or dissociated neutral beam (1634) area and/or region (1614) and non-irradiated surface including both a, can be used for etching the surface of the substrate. The other side and/or the more dense area and/or region (1614) beam etch than being tolerant than non-irradiated, non-irradiated surface area and/or region (1614) (faster) for a desired etched. Beam (1634) is neutral and separating argon GCIB acceleration with argon before 10 provided 70 kv neutral beam or preferably formed from neutral being empty, is dissociated. Typically from about 10:1 or 20:1 according to quality of such beams neutral beam energy and SiC in silicon and SiC has differential for a faster etch rate. 30 Kv for acceleration, the present invention measuring the victims of the 16:1 have, for acceleration 50 kv, victims of the present invention about 8:1 (Si: SiCX Each non-) were measured. As shown in fig. 28d, said beam (1634) by etch is silicon substrate (1602) in trench (1632) and to generate the number, while the other side and/or the more dense area and/or region (1614) etched with minimal. Argon neutral beam or dissociated using the neutral beam etching described but, Si: SiC trench etching method have a better differential etch of the existing method (1632) can be used to form will be disclosed. Another alternative etching technique is also 28e 28d also are shown in as shown in a schematic (1640) are disclosed. In 28e also, etching beam (1642) more rigid and/or the more dense area and/or region (1614) to completely etching away and the number and, plateau (1644) and trench (1632) is leaving, both pure substrate (1602) material to the surface of the encoded number. Argon neutral beam or dissociated using the neutral beam etching described but, Si: SiC trench etching method have a better differential etch of the existing method (1632) can be used to form will be disclosed. Forming a hard mask layer followed by etching the trench also 28f representing a schematic (1650) are disclosed. The method of the existing method (preferably low temperature) plateau (1644) and trench (1632) is located above the substrate (1602) on hard mask layer (1652) (for example, silicon dioxide) used for form. Hard mask layer (1652) thickness trench (1632) than that of the thick only slightly but preferably, an integral are not correct. Other materials than silicon dioxide can be used, such as for the treatment of which can be done by hard mask subsequent good non-contaminating material are required. After oxide formation, CMP (chemical mechanical polishing) using the process of the existing method of substrate surface is planarized substrate. CMP planarization is also 28g of configuration as shown in a schematic (1660) are disclosed. Hard mask region (1664) device in exposed silicon substrate surface planarization (1602) material area (1662) are replaced. In some situations, preferably silicon plateau can be enhanced, this silicon be a subsequent shadow mask and process during the final steps exposed. In other process, upper silicon hard mask region (1664) preferably coplanar bottom of the can. Also 28h additionally includes a stepped configuration of etching as shown in a schematic (1670) are disclosed. More quickly silicon oxide etch rate of the existing method having good etching differential substrate is used substrate. Examples, for example Cl2 Or CCl2 F5 Profile of plasma etching or plasma material are disclosed. Silicon substrate (1602) in accordance with the etching of the planarizing a top surface of an end - point number by, hard mask (1664) opening in silicon surface (1672) the silicon substrate (1602) and top surface of planar, obtained configuration shown. Silicon semiconductor material in the form of the present invention embodiment described, the present invention by users, germanium grudge without including other semiconductor material and number and group II-a VI and related material including group III a-V compound semiconductor force and which can be understood to, launching of the present invention range comprising these materials intended substrate. The present invention by users, by using silicon semiconductor wafer of the present invention embodiment form such smoothing, etching, film-growth, film deposition, amorphization, useful and doping process represented for purposes but one example, the present invention by users, one advantage of the present invention is the use of bare semiconductor surface process conducted not only number, technical of the existing method using silicon substrate, other semiconductor substrate, and other materials on a substrate of an electrical circuit generally constructed, electric device, optical element, integrated circuit, micro - electric machine system (MEMS) device (and their part) and other device such that it is equally useful and a portion will be, including such applications of the present invention are understood to intended range. Pre-processing of the present invention electrically charged treater - the advantage of applying insulating drug coating, oxide and nitride such as dielectric films, insulating corrosion billion number coating, polymer, organic film, glass, ceramic materials and/or various kinds of electrically insulated electrically conductive material but are described, the present invention by users, poor or low electrically conductive materials both ion beam, such as charge transfer processing techniques as a substitute for plasma treatment with a disclosure herein a neutral beams which may be obtained advantages will be appreciated other. The present invention by users, as well as its reduced discharge induction bridge charging feature in many processing materials and is highly electrically conductive, neutral beam processing, in particular neutral monomer beam processing a further advantage of the metal and even high conductivity material, treated between areas which are at the bottom the untreated surface damage, a better smoothing, and producing more that twenty compared to interface is a device substrate. Such material of the present invention range including processing of intended substrate. The amount of electric charge to a neutral beam specification disclosure pre - treatment on behalf of the various advantages of the applied insulating/or non electrically conductive material about to but against described, the present invention by users, be in the form of insulating layer overlying the substrate or insulated other coating or layer in the form of electrically conductive material, semiconductor material, or slightly equally applied with control of conductive material, wherein at least slightly conductive materials processed using the charge transfer processing techniques that can be induced by surface charge number for other paths or stable ground connections that do not have a stand-alone will be disclosed. In this case, in the process at least some conductive materials can cause damage to the charging of these materials or lower insulating material. Neutral beam processing can be avoided by charging and damage of the present invention. The present invention by users, the insulating material of the present invention range at least some conductive materials like array processing including such non overlayed intended substrate. The present invention refers to various embodiment for the type described but, in addition the present invention refers to of the present invention in various other and other embodiment that the spirit and scope should it will form. A method of forming a patterned hard mask on a surface of a substrate uses an accelerated neutral beam with carbon atoms. The objects set forth above as well as further and other objects and advantages of the present invention are achieved by the various embodiment's of the invention described herein below. A deaerator and [...] number, said gas cluster ion beam is formed including carbon atoms including gas cluster ions in a decompression chamber, said gas cluster ion to accelerate said accelerated gas cluster ion beam along a beam path in a decompression chamber is formed, said nuclear fission and/or along a beam path to facilitate the dissociation of at least some of said accelerated gas cluster ion, said charged particles in said beam path from said treater accelerated along a beam path to a stand-alone number decompression chamber is formed, a patterned template and method for introducing a depressurizing chamber said substrate, said substrate holding said beam path, through an opening in the patterned template in said treater for treating the surface of the substrate to said accelerated by irradiating said surface regions of said regions of said surface hardened by implanting carbon atoms and/or carbon-containing bath patterned layer is formed, said substrate separating said template, said patterned layer number 1 preferentially etching said carbon-containing surface having one or more trenches (are) and at least one plateau (are) non-carbon containing portion and forming said surface of material in a stand-alone number, the hard mask layer is formed in the trench and said plateau (are) (are), said hard mask layer for a stand-alone but it from said plateau (are) number, from said trench (are) not, when the in addition, etching said hard mask layer as a mask substrate material including said surface using a stand-alone number the number 2, the patterned hard mask method tearoom waitress stress formed on the surface of the substrate. According to Claim 1, said beam path from said number of special step is essentially all charged particles number industry method. According to Claim 1, further including method for heat treating said substrate after said number being resized. According to Claim 1, said gas from said gas cluster ion beam consisting essentially neutral beam method. According to Claim 1, said gas cluster ion beam to accelerate said promoting step definition including method in ionization efficiency improving acceleration voltage to a raised position. According to Claim 1, said promoting step said accelerated gas cluster ion beam ion in increasing the speed of range including method. According to Claim 1, said gas cluster ion beam to said decompression chamber promoting step used to form said one or more gaseous phase component by introducing said pressure including method increasing along a beam path. According to Claim 1, said radiant energy to said accelerated gas cluster ion beam or promoting step includes ascertaining the treater including method. According to Claim 1, said workpiece surface at least a portion of said neutral beam processing method comprising substantially 1eV - thousands eV having energy of monomer. According to Claim 1, said surface of said substrate processing steps scans said accelerated neutral beam processing said extending portion further including method. According to Claim 1, said substrate including method of determining or amorphous silicon. According to Claim 1, said SiC processing stepsX (0. 05<X<3) forming a layer of the method. According to Claim 1, said hard mask layer including method pyrogenically prepared silicon dioxide. According to Claim 1, including number 2 argon treater accelerated method using said number 1 the etching step. According to Claim 1, said number 2 Cl the etching step2 Or CCl2 F5 Plasma etching using the same method. According to Claim 1, said acceleration step 5 provided 50 kv said by a potential of the gas cluster ion accelerating method. According to Claim 1, said processing steps 1 × 1014 - 5 × 1016 A predetermined amount of carbon atoms/cm2 ion injecting method. According to Claim 1, said patterned layer having a thickness of about 3 nm carbon-containing about 1 - method. According to Claim 1, flush with the substrate surface to said bottom surface of said hard mask region remaining said number 2 the etching step method. A substrate formed by anti number 1 on the surface of a patterned hard mask.
