Double heterojunction group III-nitride structures

16-03-2016 дата публикации

Номер:

TW0201611271A

Автор: 夏赫瑞莎, 艾達度強畢斯, 湯瑪斯卡利歐, 傑哈德索納, REZA SHAHED, CHUMBES EDUARDO M, KAZIOR THOMAS, SOLLNER GERHARD, REZA, SHAHED, CHUMBES, EDUARDO M., KAZIOR, THOMAS, SOLLNER, GERHARD

Принадлежит: 雷森公司

Контакты:

Номер заявки: 47-16-10414

Дата заявки: 22-05-2015

A semiconductor structure having: a Group III-N channel layer, a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer; and a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of the channel layer. The channel layer has disposed therein a predetermined n-type conductive dopant.

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/26 H01L21/265 H01L21/2654 H01L29 H01L29/H01L29/2 H01L29/20 H01L29/200 H01L29/2003 H01L29/205 H01L29/3 H01L29/36 H01L29/365 H01L29/6 H01L29/66 H01L29/664 H01L29/6646 H01L29/66462 H01L29/7 H01L29/77 H01L29/778 H01L29/7784 H01L29/7786 H01L29/7787 H01L29/7788 H01L29/7789 H1 H10 H10D H10D3 H10D30 H10D30/H10D30/0 H10D30/01 H10D30/015 H10D30/4 H10D30/47 H10D30/473 H10D30/4735 H10D30/475 H10D30/4755 H10D30/477 H10D30/478 H10D6 H10D62 H10D62/H10D62/6 H10D62/60 H10D62/605 H10D62/8 H10D62/82 H10D62/824 H10D62/85 H10D62/850 H10D62/8503

IPC - классификация

H H0 H01 H01L H01L2 H01L29 H01L29/H01L29/6 H01L29/66 H01L29/7 H01L29/77 H01L29/778

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