Method for forming integrated circuit structure with thinned contact

21-02-2017 дата публикации

Номер:

US09576847B2

Автор: Audrey Hsiao-Chiu HSU, Fu-Kai Yang, Hsien-Cheng WANG, Hsin-Ying Lin, Mei-Yun Wang, Shih-Wen Liu

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/7 H01L21/76 H01L21/768 H01L21/7681 H01L21/76816 H01L21/7687 H01L21/76877 H01L21/8 H01L21/82 H01L21/823 H01L21/8234 H01L21/82343 H01L21/823437 H01L21/82347 H01L21/823475 H01L21/8238 H01L21/82387 H01L21/823871 H01L27 H01L27/H01L27/0 H01L27/08 H01L27/088

IPC - классификация

G G0 G01 G01S G01S1 G01S1/G01S1/6 G01S1/64 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/28 H01L21/288 H01L21/2885 H01L27 H01L27/H01L27/0 H01L27/08 H01L27/088

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