Memory device based on ferroelectric capacitor

26-09-2023 дата публикации

Номер:

US11769541B2

Автор: Huazhong Yang, Juejian Wu, Xiaoyang Ma, Xiyu He, Xueqing Li, Yongpan Liu, Zhiyang Xing

Принадлежит: TSINGHUA UNIVERSITY

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

G G1 G11 G11C G11C1 G11C11 G11C11/G11C11/2 G11C11/22 G11C11/221 G11C11/223 G11C11/225 G11C11/2255 G11C11/2257 G11C11/227 G11C11/2273 G11C11/2275 G11C11/5 G11C11/56 G11C11/565 G11C11/5657 G11C7 G11C7/G11C7/1 G11C7/12 G11C8 G11C8/G11C8/0 G11C8/08 Y Y0 Y02 Y02D Y02D1 Y02D10 Y02D10/Y02D10/0 Y02D10/00

IPC - классификация

G G1 G11 G11C G11C1 G11C11 G11C11/G11C11/2 G11C11/22 G11C8 G11C8/G11C8/0 G11C8/08 H H0 H01 H01L H01L2 H01L27 H01L27/H01L27/1 H01L27/11 H01L27/115 H01L27/1150 H01L27/11502

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