Structure of 3D NAND memory device and method of forming the same

26-12-2023 дата публикации

Номер:

US11856776B2

Автор: Li Hong XIAO, Li Xun Gu

Принадлежит: Yangtze Memory Technologies Co Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/025 H01L21/0253 H01L21/02532 H01L21/026 H01L21/0263 H01L21/02636 H01L21/2 H01L21/28 H01L21/281 H01L21/2818 H01L21/28185 H01L21/3 H01L21/31 H01L21/311 H01L21/3111 H01L21/31111 H01L21/3114 H01L21/31144 H01L29 H01L29/H01L29/4 H01L29/40 H01L29/401 H01L29/4011 H01L29/40117 H1 H10 H10B H10B4 H10B43 H10B43/H10B43/2 H10B43/27 H10B43/3 H10B43/35

IPC - классификация

C C2 C23 C23C C23C1 C23C16 C23C16/C23C16/2 C23C16/24 C3 C30 C30B C30B1 C30B13 C30B13/C30B13/2 C30B13/24 C30B2 C30B29 C30B29/C30B29/0 C30B29/08

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