SEED CRYSTAL FROM SILICON CARBIDE SINGLE CRYSTAL AND PROCEDURE FOR THE PRODUCTION OF A STAFF THEREBY

PROCEDURE FOR THE PRODUCTION OF GROUP III-METAL NITRIDE MATERIALS

Method and apparatus for producing M^IIIN columns and M^IIIN materials grown thereon

Crystals comprising single-walled carbon nanotubes

Verfahren zum Herstellen einkristalliner Schichten

DIAPHRAGM WITH OPTIMIZED HEAT EMISSION BEHAVIOUR

Il est présenté une dispositif pour revêtement par procédé CSS de substrats dans lequel un diaphragme (2) est disposé entre un creuset (3) chauffé avec une substance capable de se sublimer et le substrat (1) à recouvrir, le diaphragme (2) sur la face tournée vers le creuset (3) et/ou le substrat (1) présentant une structure de surface et/ou un revêtement et/ou une couverture qui augmente(nt) l'émission thermique dans la direction du creuset (3) et/ou rédui(sen)t l'émission thermique dans la direction du substrat (1). There is presented a device for coating by CSS process of substrates in which a diaphragm (2) is disposed between a crucible (3) heated with a substance capable of sublimating and the substrate (1) to be covered, the diaphragm (2) on the face facing the crucible (3) and / or the substrate (1) having a surface structure and / or a coating and / or a covering which increases the thermal emission in the direction of the crucible (3) and / or reduce (sen) t the thermal emission in the direction of the substrate (1).

Method of growth of a crystal or a crystalline layer.

DEVICES AND METHOD FOR PRECIPITATING A LAYER ON A SUBSTRATE

SI 상에서 성장된 III-V 족 재료의 제어된 n-도핑 방법

The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration.

APPARATUS AND METHOD FOR BULK VAPOUR PHASE CRYSTAL GROWTH

A vapour conduit for use in an apparatus for bulk vapour phase crystal growth, an apparatus for bulk vapour phase crystal growth, and a process for bulk vapour phase crystal growth are described. The vapour conduit is a flow conduit defining a passage means adapted for transport of vapour from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapour flow downstream of the flow restrictor away from a longitudinal centre line of the conduit and for example towards an edge of the conduit.

LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

EFFUSION CELLS, DEPOSITION SYSTEMS INCLUDING EFFUSION CELLS, AND RELATED METHODS

An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.

Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate

An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A molybdenum distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The molybdenum distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. The molybdenum distribution plate includes greater than about 75% by weight molybdenum.

SINGLE CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD

The device is equipped with a crucible main body (4), wherein silicon carbide raw material (5), which is the raw material for silicon carbide single crystals (20), and a seed crystal (7), whereon a sublimation gas obtained by sublimating the silicon carbide raw material (5) is recrystallized, that are accommodated facing each other, and multiple guide members (8) are provided inside the crucible main body (4). Circular openings are formed in the guide members (8) at positions corresponding to the seed crystal (7), and are provided at intervals from each other between the silicon carbide raw material (5) and the seed crystal (7).

DEVICE FOR MEASURING A FLUX OF MATTER BY ABSORPTION OF LIGHT, AND CORRESPONDING MEASURING METHOD

PROCEDURE FOR THE PRODUCTION OF NANO-PARTICLES AND DEVICE FOR YOUR PRODUCTION

SIC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES

Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.

УСТРОЙСТВА И СПОСОБ ДЛЯ ОСАЖДЕНИЯ СЛОЯ НА ПОДЛОЖКЕ

Изобретение относится к устройству для осаждения состоящего по меньшей мере из двух компонентов слоя на предмете (20), содержащему камеру (11) осаждения для расположения предмета (20), по меньшей мере один источник (12) с подлежащим осаждению материалом, а также по меньшей мере одно приспособление (40) для управления процессом осаждения, которое выполнено так, что обеспечивается возможность изменения концентрации по меньшей мере одного компонента подлежащего осаждению материала в его газовой фазе перед осаждением на подложку посредством избирательного связывания определенного количества указанного по меньшей мере одного компонента, при этом обеспечивается возможность управления избирательно связанным количеством указанного по меньшей мере одного компонента посредством изменения по меньшей мере одного параметра управления, функционально связанного со скоростью связывания компонента. Изобретение относится также к устройству для осаждения состоящего по меньшей мере из двух компонентов слоя ...

SINGLE-CRYSTAL SILICON CARBIDE FORMATION

METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROWING DEVICE FOR GROUP III NITRIDE SEMICONDUCTOR CRYSTAL

PURPOSE: A method and an apparatus for growing a group III nitride semiconductor crystal are provided to improve a growth speed of the group III nitride semiconductor crystal by growing the group III nitride semiconductor crystal in a chamber including a heat shielding unit. CONSTITUTION: A group III nitride semiconductor crystal growing apparatus(100) includes a chamber(101) and a heating unit(125). The chamber includes a first space, a second space, and a heat shielding unit(110). A raw material(13) including the group III nitride semiconductor is arranged in the first space. The group III nitride semiconductor crystal(15) grows in the second space. The heat shielding unit is positioned between a first space and a second space. The heat shield unit shield heat radiation from the raw material. The heating unit sublimates the material arranged in the first space. The heat emissivity of the heat shield unit is lower than the heat emissivity of the group III nitride semiconductor crystal.

FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE

The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Growth of bulk single crystals of aluminum nitride

Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion

A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.

APPARATUS FOR EVAPORATION, A CRUCIBLE FOR EVAPORATION AND A METHOD OF GROWING A FILM ON A SUBSTRATE

The present invention relates to an apparatus for evaporation comprising a vacuum chamber, a substrate stage defining a substrate plane and at least one effusion cell, the effusion cell comprising a crucible having a volume, wherein said effusion cell, crucible and substrate stage are arranged inside the vacuum chamber. The crucible comprises a first end, a second end, at least one side wall and an aperture. In a typical apparatus according to the invention the aperture is situated in the first wall or in a side wall closer to the first end than the second end, the second end arranged closer to the substrate plane than the first end. The invention also relates to a crucible for evaporation, having a volume, comprising a first end, a second end, at least one side wall and an aperture. The invention further relates to a method of growing a film on a substrate.

VAPOR PHASE GROWTH METHOD AND VAPOR PHASE GROWTH APPARATUS

A vapor phase growth method of embodiments includes: forming a first silicon carbide layer having a first doping concentration on a silicon carbide substrate at a first growth rate by supplying a first process gas under a first gas condition; forming a second silicon carbide layer having a second doping concentration at a second growth rate higher than the first growth rate by supplying a second process gas under a second gas condition; and forming a third silicon carbide layer having a third doping concentration lower than the first doping concentration and the second doping concentration at a third growth rate higher than the second growth rate by supplying a third process gas under a third gas condition.

EFFUSIONSZELLEN, ABSCHEIDESYSTEME MIT EFFUSIONSZELLEN UND ZUGEHÖRIGE VERFAHREN

Eine Effusionszelle enthält einen Schmelzbehälter zur Aufnahme von zu verdampfendem oder zu sublimierendem Material, ein Zuführrohr, das ausgebildet ist, aus dem Schmelzbehälter stammendes verdampftes oder sublimiertes Material in eine Kammer zu führen, ein Versorgungsrohr, das sich aus dem Schmelzbehälter erstreckt, wobei das Versorgungsrohr angeordnet und ausgebildet ist, Kondensat, das von dem verdampften oder sublimierten Material stammt, aufzufangen und das Kondensat zu dem Schmelzbehälter zurückzuführen, und mindestens ein Heizelement, das angeordnet und ausgebildet ist, Material in dem Schmelzbehälter derart aufzuheizen, dass ein Verdampfen oder Sublimieren des Materials und ein Ausströmen des verdampften oder sublimierten Materials durch das Zuführrohr aus der Effusionszelle bewirkt werden. Die Effusionszelle ist derart ausgebildet, dass der Schmelzbehälter mit dem zu verdampfenden oder zu sublimierenden Material auffüllbar ist, ohne dass die Effusionszelle aus der Prozessvakuumkammer ...

PROCEDURE AND PLANT WITH SEED OWNER FOR BREEDING OF SILICON CARBIDE SINGLE CRYSTALS

DIAPHRAGM HAS OPTIMIZED THERMAL EMISSION BEHAVIOR

Il est présenté une dispositif pour revêtement par procédé CSS de substrats dans lequel un diaphragme (2) est disposé entre un creuset (3) chauffé avec une substance capable de se sublimer et le substrat (1) à recouvrir, le diaphragme (2) sur la face tournée vers le creuset (3) et/ou le substrat (1) présentant une structure de surface et/ou un revêtement et/ou une couverture qui augmente(nt) l'émission thermique dans la direction du creuset (3) et/ou rédui(sen)t l'émission thermique dans la direction du substrat (1). It is presented a device for CSS coating substrates in which a diaphragm (2) is disposed between a crucible (3) heated with a substance capable of subliming and the substrate (1) to be covered, the diaphragm (2) on the face facing the crucible (3) and / or the substrate (1) having a surface structure and / or a coating and / or cover which increases (s) the thermal emission in the direction of the crucible (3) and / or reduce (sen) t the thermal emission in the direction of the substrate (1).

SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible receiving a raw material, and comprising an upper portion and a lower portion opposite to each other, and seed holders disposed at the upper and lower portions, respectively.

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Ingot, silicon carbide substrate, and method for producing ingot

An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 5×1017 atoms/cm4 or less.

Deposition systems including effusion sources, and related methods

A physical vapor deposition system includes a deposition chamber; a wafer support structure disposed within the deposition chamber and configured to support at least one wafer thereon, and at least one effusion cell disposed at least partially outside the deposition chamber and coupled to a wall of the deposition chamber. The at least one effusion cell is configured to generate physical vapor by evaporation or sublimation of material within the at least one effusion cell, and to inject the physical vapor into the deposition chamber through an aperture in the wall of the deposition chamber. The at least one effusion cell is configured such that the at least one effusion cell can be filled with the material to be evaporated or sublimated without removing the at least one effusion cell from the deposition chamber and without interrupting a deposition process performed using the deposition system.

Large diameter, high quality SiC single crystals, method and apparatus

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

SEED CRYSTAL OF SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING INGOT USING SAME

The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from -45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.

СПОСОБ СОЗДАНИЯ ИНТЕРФЕЙСА ДЛЯ ИНТЕГРАЦИИ МОНОКРИСТАЛЛИЧЕСКОГО ОКСИДА ЕВРОПИЯ С ГЕРМАНИЕМ

Изобретение относится к технологии формирования эпитаксиальных гетероструктур, а именно тонких пленок оксида европия на германии, которые могут быть использованы при создании устройств германиевой наноэлектроники и спинтроники, в частности инжекторов спин-поляризационного тока, спиновых фильтров, устройств памяти, нейроморфных устройств. Способ создания интерфейса для интеграции монокристаллического оксида европия с германием включает очистку поверхности подложки Ge(001) от слоя естественного оксида и формирование на ней поверхностной фазы Eu, представляющей собой субмонослойную периодическую структуру из атомов Eu, при этом поверхностную фазу Eu формируют путем открытия заслонки ячейки Eu, что обеспечивает осаждение атомов Eu при давлении потока атомов Eu PEu=(0,3÷10)⋅10-8 Торр на подложку, поддерживаемую при температуре Ts=410°С, в течение времени, необходимого для формирования поверхностной фазы, после чего заслонку ячейки Eu закрывают, температуру подложки устанавливают равной Ts=20 ...

A Method of Growing a Crystal or Cristalline Layer.

... 1,171,005. Crystallizing cerium or lanthanum oxide. J. R. DRABBLE and A. W. PALMER. 16 May, 1968 [26 May, 1967], No. 24721/67. Heading B1S. [Also in Division Cl] A crystalline rod 14 of cerium or lanthanum oxide is grown on a cathode 11 from a molten zone 15 fed with material from a consumable anode 10 of the material during passage of an electric discharge from the cathode to the anode.. The cathode may be of the same material or of carbon capped therewith. The anode may be above (as shown) or below the cathode.

DECREASE OF THE STICKSTOFFGEHALTS IN SILICON CARBIDE CRYSTALS BY SUBLIMATION GROWTH IN WASSERSTOFFHALTIGER ENVIRONMENT

VERFAHREN ZUR HERSTELLUNG VON NANOPARTIKELN UND VORRICHTUNG DAZU

A method for the production of organic nanoparticles and/or microcristals comprises the steps of evaporating an organic material, thereby producing molecular dispersed vapour, and transporting said molecularly dispersed vapour by means of hot inert gas into a liquid condensation medium, thereby producing nanoparticles and/or microcristals forming a dispersion of said nanoparticles and/or microcristals in said liquid condensation medium.

VERFAHREN ZUR HERSTELLUNG VON NANOPARTIKELN UND VORRICHTUNG DAZU

A method for the production of organic nanoparticles and/or microcristals comprises the steps of evaporating an organic material, thereby producing molecular dispersed vapour, and transporting said molecularly dispersed vapour by means of hot inert gas into a liquid condensation medium, thereby producing nanoparticles and/or microcristals forming a dispersion of said nanoparticles and/or microcristals in said liquid condensation medium.

Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate

Vapor Deposition Apparatus and Process for Continuous Deposition of a Thin Film Layer on a Substrate An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A molybdenum distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The molybdenum distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the ...

PROCESS OF PRODUCTION OF FILMS ULTRA-MINCES OF FERRITES AND ARTICLES WHILE RESULTING

REDUCING NITROGEN CONTENT IN SILICON CARBIDE CRYSTALS BY SUBLIMATION GROWTH IN A HYDROGEN-CONTAINING AMBIENT

The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing all ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

SEED CRYSTAL OF SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING INGOT USING SAME

A seed crystal of a silicon carbide single crystal preferably used to produce a substrate (wafer) for a power device or a high-frequency device, a method for producing an ingot using the same are disclosed. The single crystal growing face of a seed crystal of a silicon carbide single crystal is inclined at an angle of 3 to 60 degrees with respect to the (11-20) face toward the direction at an angle of -45 to 45 degrees inclined from the <0001> direction to the [1-100] direction. By growing a crystal using such a seed crystal, high-quality silicon carbide single ingot is produced. According to the invention, a material of a favorable-quality SiC single crystal having a diameter suitable to practical application and hardly including crystal defects such as micropipe defects and stacking faults can be produced with favorable reproducibility.

Growth of bulk single crystals of aluminum nitride

Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

IMPROVED FURNACE APPARATUS FOR CRYSTAL PRODUCTION WITH SEED HOLDER REPOSITIONING UNIT

The present invention refers to a furnace apparatus comprising a furnace unit, wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface, at least one crucible unit, wherein the crucible unit is arranged inside the furnace housing, wherein the crucible unit comprises a crucible housing, wherein the crucible housing has an outer surface and an inner surface, wherein the inner surface at least partially defines a crucible volume, wherein a receiving space for receiving a source material is arranged or formed inside the crucible volume, wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume, at least one heating unit for heating the source material, wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit, characterized in that a position adjustment ...

Способ получения монокристаллического SiC

FIELD: microelectronics. SUBSTANCE: invention relates to microelectronics and relates to a technology for producing single crystals of SiC - a widespread material used in the manufacture of integrated circuits, in particular, by the method of high-temperature physical gas transport. The method for producing single-crystal SiC consists in the fact that a growth crucible 4 with a source 16 of silicon carbide powder and a plate 8 of a silicon carbide seed single crystal SiC is placed in the growth chamber 1, equipped with a heat-insulating screen 2 with a pyrometric hole 3, in the growth crucible 4 fields of operating temperatures with an axial gradient in the direction from the plate 8 of the seed single crystal to the source 16, the source 16 is evaporated, followed by the crystallization of silicon carbide 21 on the surface of the plate 8 of the seed single crystal due to the heating of the growth chamber 1 by the heater and the cooling of the plate 8 of the seed single crystal through the pyrometric hole 3, while in the process of growth an additional heat-insulating screen 19 is used, formed by winding the sheets refractory material on the outer side wall of the growth crucible 4, also provides a controlled outflow of silicon-containing volatile compounds formed during the evaporation of the source 16 from the growth crucible 4 in an amount from 20 to 50% of the weight of the grown ingot 21 in terms of silicon carbide through the holes 12 and gaps 15 located at the edge of the crystallization front, or through the aforementioned holes and a groove made at the level of the edge of the plate 8 of the seed single crystal by changing the total cross-section of the holes 12 and/or the gap 15 and/or the width of the groove. EFFECT: invention improves the quality of the obtained single-crystal SiC ingots and increases their yield. 1 cl, 3 dwg, 5 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 761 199 C1 (51) МПК C30B 23/00 (2006.01) C30B 29/36 (2006.01) C30B 35/00 (2006.01) ...

FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE

Seed and seedholder combinations for high quality growth of large silicon carbide single crystals

A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for creating a major thermal gradient in the crucible that defines a major growth direction between the source composition and the seed crystal for encouraging vapor transport between the source composition and the seed crystal, and the seed crystal being positioned on the seed holder with the macroscopic growth surface of the seed crystal forming an angle of between about 70 DEG and 89.5 DEG degrees relative to the major thermal gradient and the major growth direction and with the crystallographic orientation of the seed crystalhaving the c-axis of the crystal forming an angle with the major thermal gradient of between about 0 DEG and 2 DEG .

잉곳 제조 장치

... 실시예에 따른 잉곳 제조 장치는, 원료를 장입하는 도가니; 상기 도가니의 상부에 위치하고, 종자정을 고정하는 홀더; 및 상기 도가니 내에 위치하는 필터부를 포함하고, 상기 필터부는 상기 원료의 표면으로부터 이격되어 위치한다.

METHOD OF SINGLE CRYSTAL GROWTH

A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal

A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE

A method is disclosed of growing an epitaxial layer on a substrate (20) of monocrystalline Silicon Carbide, SiC. The method comprises providing (S100) a source material (10) of monolithic polycrystalline SiC with a columnar micro-grain structure and the substrate (20) of monocrystalline SiC, in a chamber (5) of a crucible with a distance therein between, arranging (S102) a carbon getter (1) in said chamber (5) of the crucible close to the source material (10) and the substrate (20), said carbon getter (1) having a melting point higher than 2200° C and an ability of forming a carbide layer with carbon species evaporated from SiC, reducing (S106) pressure in the chamber (5), inserting (S108) an inert gas into the chamber (5), raising (S110) the temperature in the chamber (5) to a growth temperature, such that a growth rate between 1 µm/h and 1 mm/h, is achieved, and keeping (S112) the growth temperature until a growth of at least 5 µm has been accomplished on the substrate (20).

REDUCING NITROGEN CONTENT IN SILICON CARBIDE CRYSTALS BY SUBLIMATION GROWTH IN A HYDROGEN-CONTAINING AMBIENT

The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing all ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Method for manufacturing SiC crystal

III-th family nitride single crystal and growth method thereof

A method of growing a good-quality single crystal of a Group III element nitride with satisfactory reproducibility; and a single crystal of a Group III element nitride obtained by the growth method. The method comprises growing a single crystal (3) of a Group III element nitride in a crystal growth vessel (11), and is characterized in that a porous object which is made of a metal carbide and has a porosity of 0.1-70% is used as at least part of the crystal growth vessel (11). Due to the use of this crystal growth vessel (11), 1-50% of a raw-material gas (4) present in the crystal growth vessel (11) can be discharged from the crystal growth vessel (11) through pores of the porous object.

PROCESS OF PRODUCTION OF FILMS ULTRA-MINCES OF FERRITES AND ARTICLES WHILE RESULTING

Procédé de fabrication permettant la croissance par épitaxie par jets moléculaires (MBE) assistée par plasma d'oxygène atomique de couches ultra-minces de ferrites de structure spinelle.

대구경 고품질 ＳｉＣ 단결정, 방법 및 장치

... 직경 100, 125, 150 및 200 mm의 고품질 SiC 기판을 제조하는데 적합한 대구경 SiC 단결정을 형성하기 위한 방법 및 시스템이 기술된다. SiC 단결정은 앝은 반경방향 온도 구배의 존재하에 종자사용 승화 기술(seeded sublimation technique)을 사용하여 성장시킨다. SiC 승화 성장 동안, 탄소 미립자로부터 여과된 SiC 함유 증기의 유동은 종자정과 SiC 함유 증기의 원료 사이에 배치된 분리판에 의해서 종자정 표면의 중심 영역으로 실질적으로 제한된다. 상기 분리판은 실질적으로 증기 비투과성인 제2 부분에 의해 둘러싸인 실질적으로 증기 투과성인 제1 부분을 포함한다. 성장한 결정은 편평하거나 다소 볼록한 성장 계면을 갖는다. 성장한 결정으로부터 제조된 대구경 SiC 웨이퍼는 낮은 격자 곡률, 및 적층 결함, 혼입, 마이크로파이프 및 전위와 같은 결정 결함의 낮은 밀도를 나타낸다.

INGOT MANUFACTURING APPARATUS FOR GROWING A HIGH QUALITY SINGLE CRYSTAL

PURPOSE: An ingot manufacturing apparatus is provided to improve thermal stability by including a filter part which selectively passes a specific component through the inside of a crucible. CONSTITUTION: A crucible(100) receives a raw material(130). A filter part(120) selectively passes a specific component through the inside of the crucible. The raw material comprises silicon and carbon. The raw material uses polycarbosilane. The filter part absorbs carbon impurities. COPYRIGHT KIPO 2013 ...

SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE

In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, and a filter part to allow a specific component in the crucible to selectively pass through the filter part. The raw material includes silicon and carbon.

Silicon carbide sublimation systems and associated methods

Methods of growing silicon carbide are provided in which an electric arc is used to sublime a silicon carbide source material. In these embodiments, a silicon carbide seed crystal is introduced into a sublimation system, along with first and second electrodes that are separated by a gap. A power supply is coupled to at least one of the electrodes and used to create an electric arc across the gap between the two electrodes. This electric arc is used to sublime at least a portion of a silicon carbide source material. The vaporized silicon carbide material may then be encouraged to condense onto a seed material to produce monocrystalline or polycrystalline silicon carbide. In embodiments of the present invention, at least one of the electrodes is comprised of silicon carbide and serves as the silicon carbide source material.

Method of single crystal growth by controlling the heating of a source material and the cooling of a backside of a lid

A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

Physical vapor transport growth system for simultaneously growing more than one sic single crystal, and method of growing

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises according to the present invention comprises a crucible (102) containing two growth compartments (114A, 114B) comprising each at least one SiC seed crystal (106A, 106B) and a source material compartment (112) for containing a SiC source material (104). The source material compartment (112) is arranged symmetrically between said growth compartments (114A, 114B) and is separated from each of the growth compartments by a gas permeable porous membrane (116A, 116B; 116A', 116B').

Crucible for growing crystals

A crucible is used for allowing a seed crystal to grow via the source of materials. The crucible includes a growth chamber, a holder, a reflecting device, and a plurality of gas guiding devices. The holder is located on the top of the crystal growth chamber for holding the seed. The reflecting device is located around the holder. The plurality of gas guiding devices is located on the bottom of the growth chamber, for containing the material source and guiding the gasification or vaporization of the material source.

APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a single crystal that enables easier temperature control of a raw material for the growth of the single crystal and can give a single crystal having better quality and a larger central part than conventional ones. SOLUTION: The apparatus for manufacturing the single crystal is equipped with a container member 3 that can accommodate a raw material 5 for the growth of the single crystal and a seed crystal 7 for the growth of the single crystal at the positions facing each other in a crucible 2 and multiple guide members 8 installed with a space from each other in the container member 3 that have a function of guiding a sublimation gas of the raw material 5 for the growth of the single crystal to the seed crystal 7 for the growth of the single crystal on which to grow the single crystal. COPYRIGHT: (C)2010,JPO&INPIT ...

(Sc,Y):AIN Einkristalle für Gitter-angepasste AlGaN Systeme

Die Erfindung betrifft ein Verfahren zur Erzeugung von einkristallinem, mit Scandium und/oder Yttrium dotiertem Aluminiumnitrid mit Gehalten an Scandium und/oder Yttrium zwischen 0,01 und 50 Atom-% bezogen auf 100 Atom-% Gesamtstoffmenge des dotierten Aluminiumnitrids, dadurch gekennzeichnet, dass in Gegenwart eines Gases, ausgewählt aus Stickstoff oder Edelgas, oder einer Mischung aus Stickstoff und Edelgas, in einem Tiegel – ein Dotierungsmaterial, ausgewählt aus Scandium, Yttrium, Scandiumnitrid oder Yttriumnitrid oder eine Mischung daraus und – ein Quellmaterial aus Aluminiumnitrid sublimiert und auf einem Keimmaterial rekondensiert werden, welches ausgewählt ist aus Aluminiumnitrid oder mit Scandium und/oder Yttrium dotiertem Aluminiumnitrid. Ebenfalls betrifft die Erfindung eine entsprechende Vorrichtung, sowie die entsprechenden einkristallinen Produkten und deren Verwendung, wodurch die Grundlage für neuartige Bauelemente auf Basis von Schichten oder Schichtstapel von Aluminiumgalliumnitrid, Indiumaluminiumnitrid oder Indiumaluminiumgalliumnitrid geschaffen wurde. The invention relates to a method for producing monocrystalline aluminum nitride doped with scandium and / or yttrium with contents of scandium and / or yttrium between 0.01 and 50 atom% based on 100 atomic% total amount of doped aluminum nitride, characterized in that in the presence of a gas selected from nitrogen or noble gas, or a mixture of nitrogen and rare gas, in a crucible - a dopant selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and - a source material of aluminum nitride sublimated and seeded which is selected from aluminum nitride or scandium and / or yttrium-doped aluminum nitride. Also, the invention relates to a corresponding device, and the corresponding monocrystalline products and their use, whereby the basis for novel devices based on layers or layer stack of aluminum gallium nitride, indium aluminum nitride or indium aluminum gallium ...

Forming transition metal dichalcogenide compounds (TMDC) material layer

包括单壁碳纳米管的晶体

... 本发明涉及一种制造单壁碳纳米管的方法，包括步骤：在基底上提供至少一个柱，该柱包括交替的第一母体材料层和第二母体材料层，第一母体材料包含富勒烯分子，第二母体材料包含催化剂；以及加热所述的至少一个柱。本发明还涉及一种用于制造单壁碳纳米管的母体构造体，包括位于一个基底上的至少一个柱，该柱包括交替的第一母体材料层和第二母体材料层，第一母体材料包含富勒烯分子，第二母体材料包含催化剂。本发明的第三方面是一种纳米管构造体，包括一个基底和位于该基底上的至少一个晶体，该晶体包括一束取向和结构基本一致的单壁碳纳米管。 ...

SILICON CARBIDE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

SEED CRYSTAL OF SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING INGOT USING SAME

Sublimation Growth of SiC Single Crystals

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.

SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique

In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

Method and apparatus for producing M'''N columns and M'''N materials grown thereon

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial ...

An apparatus for evaporation comprising an effusion cell and a method of growing a film on a substrate

The present invention relates to an apparatus for evaporation comprising a vacuum chamber (12), a substrate stage (2) defining a substrate plane (26) and at least one effusion cell (6), the effusion cell comprising a crucible (7) having a volume, wherein said effusion cell, crucible and substrate stage are arranged inside the vacuum chamber. The crucible comprises a first end (14), a second end (15), at least one side wall (16) and an aperture (17). In a typical apparatus according to the invention the aperture is situated in the first wall or in a side wall closer to the first end than the second end, the second end arranged closer to the substrate plane than the first end. The invention also relates to a crucible for evaporation, having a volume, comprising a first end, a second end, at least one side wall and an aperture. The invention further relates to a method of growing a film on a substrate.

SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

METHOD AND APPARATUS FOR GROWING SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method and apparatus for growing a single crystal by which a long single crystal can be obtained while keeping the quality of the single crystal. SOLUTION: A raw material gas flowing in a growth vessel (1, 2) is collected by using a tubular gas flow control member 6 and sent toward a seed crystal 5 . A flow of the raw material gas bypassing an inner wall face opposite to a single crystal 11 being grown in the gas flow control member 6 is formed by a gas passage10. The raw material gas is passed through a space 9 on the inner wall face of the gas flow control member 6 at the inside of the gas flow control member 6, and the single crystal 11 is grown from the seed crystal 5. At the initial stage of the growth of the single crystal 11 from the seed crystal 5, the single crystal 11 is grown while restricting the expansion of its diameter toward the growth direction in comparison with a subsequent growth stage. COPYRIGHT: (C)2005,JPO&NCIPI ...

ＳｉＣ単結晶の昇華成長方法及び装置

Formation of single-crystal silicon carbide

METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROWING DEVICE FOR GROUP III NITRIDE SEMICONDUCTOR CRYSTAL

A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.

METHOD AND DEVICE FOR ACCURATELY MEASURING THE INCIDENT FLUX OF AMBIENT PARTICLES IN A HIGH OR ULTRA-HIGH VACUUM ENVIRONMENT

An apparatus and method that can measure flux density in-situ under high vacuum conditions includes a means for confining a collection of identical, elemental sensor particles to a volume of space by initial cooling by laser or another method, then confinement in a sensor volume using externally applied magnetic and/or optical fields.

Semi-insulating silicon carbide mono-crystal

PROCEEDED OF PREPARATION OF POLYCRYSTALS AND ZINC OXIDE MONOCRYSTALS (ZNO) ON a GERM BY SUBLIMATION ACTIVEE CHEMICALLY HAS HIGH TEMPERATURE

Procédé de préparation d'oxyde de zinc ZnO polycristallin ou monocristallin sur un germe placé dans une enceinte sous atmosphère contrôlée, par sublimation d'une source d'oxyde de zinc placée dans un creuset à l'intérieur de l'enceinte et distant du germe, formation d'espèces gazeuses, transport des espèces gazeuses, condensation des espèces gazeuses sur le germe, recombinaison du ZnO en surface du germe, croissance du ZnO polycristallin ou monocristallin sur le germe, et refroidissement du ZnO polycristallin ou monocristallin, dans lequel la source d'oxyde de zinc est chauffée par induction à une température dite température de sublimation de 1200 à 1500 degres C sous une pression de 10<-3> atmosphère à 1 atmosphère.

SEED AND SEEDHOLDER COMBINATIONS FOR HIGH QUALITY GROWTH OF LARGE SILICON CARBIDE SINGLE CRYSTALS

A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for creating a major thermal gradient in the crucible that defines a major growth direction between the source composition and the seed crystal for encouraging vapor transport between the source composition and the seed crystal, and the seed crystal being positioned on the seed holder with the macroscopic growth surface of the seed crystal forming an angle of between about 70° and 89.5° degrees relative to the major thermal gradient and the major growth direction and with the crystallographic orientation of the seed crystal having the c-axis of the crystal forming an angle with the major thermal gradient of between about 0° and 2°.

Seed crystal of silicon carbide single crystal and method for producing ingot using same

The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from -45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.

SILICON CARBIDE SINGLE CRYSTAL AND ITS GROWING METHOD

PROBLEM TO BE SOLVED: To produce an SiC single crystal reduced in micropipes exposed on the surface and lamination defect and provide a method for growing the single crystal. SOLUTION: In the growth of the SiC single crystal, an SiC crystal 40 is characteristically grown on a seed crystal 30 comprising an SiC single crystal that is deviated by an angle (α) to the face {0001} (20°<α<60°) and has an exposed face 30u, having an angle β of ≤15° between a vector obtained by projecting its normal vector to the {0001} face and a <11-20> direction. COPYRIGHT: (C)2001,JPO ...

METHOD AND DEVICE FOR ACCURATELY MEASURING THE INCIDENT FLUX OF AMBIENT PARTICLES IN A HIGH OR ULTRA-HIGH VACUUM ENVIRONMENT

An apparatus and method that can measure flux density in-situ under high vacuum conditions includes a means for confining a collection of identical, elemental sensor particles to a volume of space by initial cooling by laser or another method, then confinement in a sensor volume using externally applied magnetic and/or optical fields.

Shielding member and apparatus for single crystal growth

DEVICE FOR MEASURING A FLOW OF MATTER BY LIGHT ABSORPTION, AND CORRESPONDING MEASURING METHOD

DEVICE FOR MEASURING A FLOW OF MATERIAL BY LIGHT ABSORPTION AND CORRESPONDING MEASURING METHOD

Il est proposé un dispositif de mesure (100) d'un flux de matière, comprenant : - une source lumineuse (10) configurée pour émettre un faisceau de lumière ayant une longueur d'onde correspondant à la longueur d'onde d'absorption d'un élément d'intérêt dudit flux de matière ; un connecteur optique (30) ; - un capteur de lumière (20) configuré pour recevoir, via le connecteur optique : ○ un faisceau atténué résultant d'une transmission du premier faisceau de lumière à travers ledit flux de matière ; ○ un faisceau non-atténué résultant d'une transmission du premier faisceau de lumière sans passer par ledit flux de matière. Le dispositif (100) est tel que le capteur de lumière est un capteur de lumière monodimensionnel, et que le connecteur optique est positionné par rapport au capteur de lumière monodimensionnel pour que le centre du connecteur optique soit aligné avec le centre du capteur de lumière monodimensionnel, de telle sorte que le faisceau non-atténué soit spectralement dirigé vers une première partie du capteur de lumière monodimensionnel et que le faisceau atténué est spectralement dirigé vers une deuxième partie du capteur de lumière monodimensionnel. A device (100) for measuring a flow of matter is proposed, comprising: - a light source (10) configured to emit a beam of light having a wavelength corresponding to the absorption wavelength d an element of interest of said material flow; an optical connector (30); - a light sensor (20) configured to receive, via the optical connector: ○ an attenuated beam resulting from transmission of the first beam of light through said flow of material; ○ a non-attenuated beam resulting from transmission of the first beam of light without passing through said flow of material. The device (100) is such that the light sensor is a one-dimensional light sensor, and the optical connector is positioned relative to the one-dimensional light sensor such that the center of the optical connector is ...

SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE

In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth crucible 6 are then established therein. The starting conditions include: a suitable gas inside the growth crucible 6, a suitable pressure of the gas inside the growth crucible 6, and a suitable temperature in the growth crucible 6 that causes the source material 4 to sublimate and be transported via a temperature gradient in the growth crucible 6 to the seed crystal 8 where the sublimated source material precipitates. During growth of the crystal 14 inside the growth crucible 6, at least one of the following growth conditions are intermittently changed inside the growth crucible 6 a plurality of times: the gas in the growth crucible 6, the pressure of the gas in the growth crucible 6, and the temperature in the growth crucible 6.

FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE

The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Apparatus and method for bulk vapour phase crystal growth

A vapor conduit for use in an apparatus for bulk vapor phase crystal growth, an apparatus for bulk vapor phase crystal growth, and a process for bulk vapor phase crystal growth are described. The vapor conduit is a flow conduit defining a passage means adapted for transport of vapor from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapor flow downstream of the flow restrictor away from a longitudinal center line of the conduit and for example towards an edge of the conduit.

Crystals comprising single-walled carbon nanotubes

The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar in the presence of a first magnetic or electric field. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure.

Apparatus and process for crystal growth

Method of preparing monocrystalline layers

PROCEEDED OF PREPARATION OF POLYCRYSTALS AND ZINC OXIDE MONOCRYSTALS (ZNO) ON a GERM BY SUBLIMATION ACTIVEE CHEMICALLY HAS HIGH TEMPERATURE

Device for silicon carbide single crystal formation comprises substrate between two superposed cylindrical compartments, seed crystal at top of first compartment, gas precursor input, and heater

Device for forming a single crystal of a non-congruent evaporation compound body (e.g. silicon carbide), which is able to exist in mono- or poly-crystalline form, comprises: a substrate (42) between two superposed cylindrical compartments (20, 14); a single crystal seed (46) at the top of the first compartment, gas precursor inlet (36); and an inductive heater (26). Device for the formation of a single crystal of a non-congruent evaporation compound body (namely, silicon carbide) able to exist in monocrystalline or polycrystalline form comprises: a first compartment (20) containing a substrate (42) in which is formed a polycrystalline source of the body and a single crystal seed (46) of the body; a second compartment (14), the substrate being located between the two compartments; an inlet (36) for gas precursors in the second compartment to cause deposition of the body in polycrystalline form on the substrate; and a heater (26) to maintain the substrate at a temperature above the temperature of the seed to cause sublimation of the polycrystalline source and deposition of the body in a single crystal form on the seed. An Independent claim is given for a process for forming a single crystal of a non-congruent evaporation compound body able to exist in monocrystalline or polycrystalline form.

FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE

The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form. © KIPO & WIPO 2007 ...

Sublimation growth of sic single crystals

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

Apparatus and Method for Crystal Growth

An apparatus for vapour phase crystal growth comprising an envelope assembly with a one source module defining at least one source volume, a growth module defining at least one growth volume, and a manifold module defining at least one manifold volume. The source module, manifold module and growth module are configured co-operably to define a fluidly continuous envelope volume including a flow restrictor between the source volume and the growth volume. A vacuum vessel containing one or more of the envelope assemblies. An evacuator to evacuate the vacuum vessel. A fluid communication path between the envelope volume and the vacuum vessel associated with each source volume at a location on the source volume side of its associated flow restrictor. A closure mechanism is configured to restrict the fluid communication path between each source volume and the vacuum vessel. A method of employing such an apparatus is also disclosed. 1. An apparatus for vapour phase crystal growth comprising:an envelope assembly having at least one source module defining at least one source volume, at least one growth module defining at least one growth volume, and at least one manifold module defining at least one manifold volume, wherein one or more source modules, a manifold module and a growth module are configured co-operably to define a fluidly continuous envelope volume including a flow restrictor between each source volume and the growth volume;a vacuum vessel containing one or more such envelope assemblies;an evacuator to evacuate the vacuum vessel;a fluid communication path between the envelope volume and the vacuum vessel associated with each source volume at a location on the source volume side of its associated flow restrictor that is configurable to be selectively openable; anda closure mechanism configured to selectively restrict the fluid communication path.2. An apparatus in accordance with wherein a source module defines a source zone spaced from the associated flow ...

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

MBE SYSTEM WITH DIRECT EVAPORATION PUMP TO COLD PANEL

An MBE system is disclosed for eliminating the excess flux in an MBE growth chamber before growth, during growth or growth interruption, and/or after growth by evaporating getter material from an effusion evaporator to the cold panel. The cold panel can be the cryopanel of the MBE growth chamber or a cold panel in an attached chamber. Said MBE system includes the cyropanel in the MBE growth chamber or a cold panel in the chamber attached to the MBE growth chamber. With a proper process such as cooling the cold panel, loading a substrate for the MBE process, providing necessary flux for the MBE growth, heating the effusion evaporator and opening the shutter for the evaporator to get the getter material flux onto the said panel, the excess flux will be eliminated. The cross contamination of the grown layer is then avoided. 1. A molecular beam epitaxy system , comprising:a growth chamber,a sample manipulator mounted inside the growth chamber for holding a sample for epitaxial growth onto the sample, anda source for supplying a flux of a growth material to the sample, wherein the molecular beam epitaxy system further comprises:a cold panel, andan effusion evaporator for supplying a flux of a getter material to the cold panel.2. The molecular beam epitaxy system according to claim 1 , wherein the cold panel is mounted inside the growth chamber or an auxiliary chamber that is connected to the growth chamber.3. The molecular beam epitaxy system according to claim 1 , wherein the cold panel is made of stainless steel.4. The molecular beam epitaxy system according to claim 1 , wherein the cold panel is a cryopanel of the molecular beam epitaxy system.5. The molecular beam epitaxy system according to claim 1 , wherein the effusion evaporator comprises a filament for heating and a crucible for a plurality of getter materials.6. The molecular beam epitaxy system according to claim 1 , wherein the effusion evaporator is arranged to supply the getter material at a beam equivalent ...

SILICON CARBIDE CRYSTAL

A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer. 1. A silicon carbide crystal , comprising a seed layer , a bulk layer , and a stress buffering structure formed between the seed layer and the bulk layer , wherein the seed layer , the bulk layer , and the stress buffering structure are each formed with a dopant , and the dopant of the stress buffering structure cycles between high and low dopant concentrations;characterized in that the stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers, wherein the buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.2. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a thickness that is greater than 0 μm and less than 0.1 μm.3. The silicon carbide crystal of claim 2 , wherein the stress buffering structure has a thickness that is less than 0.1 mm.4. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a dopant concentration gradient in its thickness direction.5. The silicon carbide crystal of claim 4 , wherein the dopant of the seed layer has a reference concentration claim 4 , and the ...

Shielding member and apparatus for single crystal growth

This shielding member that is placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, wherein the device includes a crystal growth container including the SiC source loading portion which accommodates a SiC source in an inner bottom portion, and the crystal installation portion facing the SiC source loading portion, and a heating unit that is configured to heat the crystal growth container, and the device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the SiC source loading portion; the shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container, and wherein, in a case where the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates, which is projected on an internal circle of the SiC source loading portion at SiC source surface, is 0.5 or more.

BULK DIFFUSION CRYSTAL GROWTH PROCESS

The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. 1. A method of growing group III-V nitride crystal comprising:diffusing at least one of a group-III or a nitrogen species through a porous body.2. The method according to where the group the III-V nitride crystal is substantially a single crystal.3. The method of where the group III-V nitride crystal comprises nitrogen and at least one species of Al claim 1 , Ga claim 1 , and In.4. The method of where the group III-V nitride crystal has a formula of AlInGaN claim 3 , where 0≧x≦1 claim 3 , 0≧y≦1 claim 3 , x+y+(1-x-y)≠1.5. The method of where the single crystal is spontaneously grown on at least one surface of the porous body.6. The method of where the single crystal of AlInGaN is spontaneously grown on an surface external to the body.7. The method of wherein the at least one of a group-III or nitrogen species are diffused by one or more of a thermal driving force claim 1 , a thermal driving force claim 1 , a chemical driving force claim 1 , a concentration differential or a pressure differential.8. The method of where a source for the Al species or a nitrogen species is at least one of thermal decomposition of the porous body or chemical transport via a gas including the Al species or the nitrogen species.9. The method of where the porous body comprises at least one of AlN claim 1 , AlGaN claim 1 , AlInN where (0≧x≦1) claim 1 , AlInGaN or a combination thereof.10. The method of where the porous body comprises a filler.11. The method of where the filler comprises at least one refractory material.12. The method of where the at least one refractory metal comprises at least one carbide of silicon claim 11 , niobium claim 11 , tantalum claim 11 , ...

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL AND COVERING MEMBER

A method of manufacturing a SiC single crystal includes: a storing step of storing a SiC source, which is a powder, in an inner bottom part of a crucible, wherein the crucible is configured to store the SiC source and to attach a seed crystal to a position of the crucible which faces the SiC source; a placing step of placing a porous material on at least a portion of a first surface of the SiC source, wherein the first surface is positioned on a side of the seed crystal; and a crystal growth step of sublimating the SiC source by heating to grow a crystal on the seed crystal, in which the porous material is formed of carbon or a carbide, and the hole diameter of the porous material is smaller than the average particle diameter of the SiC source. 1. A method of manufacturing a SiC single crystal , comprising:a storing step of storing a SiC source which is a powder in an inner bottom part of a crucible, wherein the crucible is configured to store the SiC source and to attach a seed crystal to a position of the crucible which faces the SiC source;a placing step of placing a porous material on at least a portion of a first surface of the SiC source, wherein the first surface is positioned on a side of the seed crystal; anda crystal growth step of sublimating the SiC source by heating to grow a crystal on the seed crystal,wherein the porous material is formed of carbon or a carbide, anda hole diameter of the porous material is smaller than an average particle diameter of the SiC source.2. The method of manufacturing a SiC single crystal according to claim 1 ,wherein the porous material covers 70% or more of the first surface of the SiC source.3. The method of manufacturing a SiC single crystal according to claim 1 ,wherein the porous material has an opening at a center thereof, andthe porous material covers an outer side of the first surface of the SiC source.4. The method of manufacturing a SiC single crystal according to claim 1 ,wherein the porous material has a face A ...

Superconducting Compounds and Methods for Making the Same

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature. 1. A method of forming a superconducting article , the method comprising: exposing the substrate to one or more pulses of a reactant including one or more of the alkaline earth metal and the rare earth metal;', 'exposing the substrate to one or more pulses of a reactant including the transition metal; and', 'exposing the substrate to one or more pulses of a reactant including the alkali metal; and, 'forming a superconducting metal oxide film on a substrate by atomic layer deposition, the metal oxide film including ions of an alkali metal and ions of a transition metal, and ions of one or more of an alkaline earth metal and a rare earth metal, the forming includingannealing the substrate with the metal oxide film formed thereon.2. The method of claim 1 , in which the alkali metal ions comprise one or more of Li ions claim 1 , Na ions claim 1 , K ions claim 1 , Rb ions claim 1 , and Cs ions.3. The method of or claim 1 , in which the transition metal ions comprise one or more of Cu ions and Fe ions.4. The method of any of the preceding claims claim 1 , in which forming the metal oxide film on the substrate comprises forming a metal oxide film comprising La ions claim 1 , Rb ions claim 1 , and Cu ions.5. The method of claim 4 , in which the metal oxide film has a composition of (RbLa)CuO.6. The method of claim 5 , in which x is greater than or equal to 0.5.7. The method of any of the preceding claims claim 5 , comprising forming one or more of a diffusion barrier and a buffer layer on ...

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, and a filter part to allow a specific component in the crucible to selectively pass through the filter part. The raw material includes silicon and carbon. 1. An apparatus for fabricating an ingot , the apparatus comprising:a crucible to receive a raw material; anda filter part to allow a specific component in the crucible to selectively pass through the filter part, wherein the raw material includes silicon and carbon.2. The apparatus of claim 1 , wherein the raw material includes polycarbosilane.3. The apparatus of claim 1 , wherein the filter part adsorbs carbon impurities.4. The apparatus of claim 1 , wherein the filter part includes a membrane.5. The apparatus of claim 1 , wherein the filter part is placed on the raw material.6. The apparatus of claim 1 , wherein the filter part has a thickness in a range of 1 mm to 10 cm.7. The apparatus of claim 1 , wherein the filter part has a porous structure.8. The apparatus of claim 4 , wherein the membrane includes a carbonbased membrane. The disclosure relates to an apparatus for fabricating an ingot.In general, materials are very important factors to determine the property and the performance of final products in the electric, electronic and mechanical industrial fields.SiC represents the superior thermal stability and superior oxidation-resistance property. In addition, the SiC has the superior thermal conductivity of about 4.6 W/Cm° C., so the SiC can be used for fabricating a large-size substrate having a diameter of about 2 inches or above. In particular, the single crystal growth technology for the SiC is very stable actually, so the SiC has been extensively used in the industrial field as a material for a substrate.In order to grow the single crystal for SiC, a seeded growth sublimation scheme has been suggested. In this case, after putting a raw material in a crucible, and a SiC single crystal serving ...

SILICON CARBIDE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

A silicon carbide crystal and a method for manufacturing the same are disclosed. The silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer, and the stress buffering structure are each formed with a dopant that cycles between high and low concentration. Therefore, the crystal defects can be significantly reduced. 1. A silicon carbide crystal , comprising a seed layer , a bulk layer , and a stress buffering structure formed between the seed layer and the bulk layer , wherein the seed layer , the bulk layer , and the stress buffering structure are each formed with a dopant , and the dopant of the stress buffering structure cycles between high and low concentrations;characterized in that the stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers, wherein the buffer layer closest to the seed layer has a variation trend of the dopant concentration similar to that of the buffer layer closest to the transition layer, and the transition layer has a dopant concentration approximately equal to that of the seed layer.2. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a thickness that is greater than 0 μm and less than 0.1 μm.3. The silicon carbide crystal of claim 2 , wherein the stress buffering structure has a thickness that is less than 0.1 mm.4. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a dopant concentration gradient in its thickness direction.5. The silicon carbide crystal of claim 4 , wherein the dopant of the seed layer has a reference concentration claim 4 , and the dopant concentration gradient gradually increases or decreases between a first concentration higher than the reference concentration and the reference concentration.6. The silicon carbide crystal of claim 4 , wherein the dopant of the seed layer has a ...

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible receiving a raw material, and comprising an upper portion and a lower portion opposite to each other, and seed holders disposed at the upper and lower portions, respectively. 1. An apparatus for fabricating an ingot , the apparatus comprising:a crucible receiving a raw material, and comprising an upper portion and a lower portion opposite to each other; andseed holders disposed at the upper and lower portions, respectively.2. The apparatus of claim 1 , wherein the raw material comprises top and bottom surfaces opposite to each other claim 1 , and a filter part is provided on at least one of the top and bottom surfaces so that a specific component selectively passes through the filter part.3. The apparatus of claim 2 , wherein the filter part comprises:a first filter part disposed on the top surface of the raw material; anda second filter part disposed on the bottom surface of the raw material.4. The apparatus of claim 1 , wherein ingots are grown in the upper and lower portions claim 1 , respectively.5. The apparatus of claim 1 , wherein the raw material is disposed at a central portion of the crucible.6. The apparatus of claim 1 , wherein the raw material includes a compound containing silicon and carbon.7. The apparatus of claim 1 , wherein the raw material includes a compound containing silicon claim 1 , carbon claim 1 , oxygen claim 1 , and hydrogen.8. The apparatus of claim 6 , wherein the raw material includes polymer containing silicon and carbon.9. The apparatus of claim 8 , wherein the raw material includes polycarbosilane.10. The apparatus of claim 1 , wherein the raw material has a fibrous structure.11. The apparatus of claim 2 , wherein the filter part transmits silicon carbide gas.12. The apparatus of claim 2 , wherein the filter part includes a membrane.13. The apparatus of claim 12 , wherein the filter part has a thickness in a range of 1 mm to 10 cm.14. The ...

APPARATUS FOR FABRICATING INGOT AND METHOD FOR FABRICATING INGOT

An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer. 1. An apparatus for fabricating an ingot , the apparatus comprising:a crucible for receiving a raw material; anda filter part for selectively filtering a specific component in the crucible,wherein the filter part comprises a polymer.2. The apparatus of claim 1 , wherein the filter part has a fibrous structure.3. The apparatus of claim 2 , wherein the filter part is placed on the raw material.4. The apparatus of claim 3 , wherein the filter part is formed along an inner wall of the crucible.5. The apparatus of claim 2 , wherein the filter part is porous.6. The apparatus of claim 5 , wherein the filter part has a thickness in a range of 1 mm to 10 cm.7. The apparatus of claim 6 , wherein the filter part comprises a membrane.8. The apparatus of claim 1 , wherein the filter part comprises a first layer and a second layer on the first layer.9. The apparatus of claim 8 , wherein a size of a pore comprised in the first layer is different from a size of a pore comprised in the second layer.10. The apparatus of claim 9 , wherein the size of the pore comprised in the first layer is greater than the size of the pore comprised in the second layer.11. An apparatus for fabricating an ingot claim 9 , the apparatus comprising:a crucible for receiving a raw material;a filter part for selectively filtering a specific component in the crucible,wherein the filter part comprises a first filter part on the raw material and a second filter part surrounding an inner wall of the crucible, andthe first filter part and the second filter part are integrally formed with each other.12. The apparatus of claim 11 , wherein the filter part comprises a polymer.13. The apparatus of claim 11 , wherein the filter part has a fibrous structure.14. A method for ...

Sic crystal and wafer cut from crystal with low dislocation density

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

SIC CRYSTAL WITH LOW DISLOCATION DENSITY

A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system. 1. A method of forming an SiC crystal , the method comprising:a. placing a seed crystal on a shelf of an insulated graphite container thereby defining a volume between ceiling of the graphite container and back surface of the seed;b. placing a source of silicon and carbon atoms in the insulated graphite container, wherein the source of silicon and carbon atoms is for transport to the seed crystal to grow the SiC crystal;c. placing the graphite container inside a furnace;d. evacuate the furnace and fill with inert gas to a pressure above 600 torre. heating the furnace to a temperature from about 2,000° C. to about 2,500° C.; and,f. evacuating the induction furnace to a pressure of from about 0.1 Torr to about 100 Torr, while directing gas flow from below the seed crystal through a periphery of the seed crystal and to a center of the volume between ceiling of the graphite container and the back surface of the seed, to thereby facilitate vapor transport from the source of silicon and carbon atoms to the seed while preventing the back surface of the seed from contacting the ceiling.2. The method of claim 1 , further comprising flowing dopant gas into the furnace.3. The method of claim 2 , wherein temperature and pressure is maintained to enable crystal growth of 0.1-50 mm thick and nitrogen concentration from 1×10to 1×10/cm.4. The method of claim 2 , wherein the seed crystal is a 4H—SiC crystal with offcut from 0 to 4 degrees toward (11-20) crystalline orientation and wherein a nitrogen concentration of the seed crystal is from about 1×10/cmto about 8×10/cm.5. The method of claim 1 , wherein ...

METHOD TO REDUCE DISLOCATIONS IN SIC CRYSTAL GROWTH

A method of forming an SiC crystal including placing a seed crystal of SiC in an insulated graphite container; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the container into the furnace; heating a furnace to a temperature from about 2,000° C. to about 2,500° C.; evacuating the furnace to a pressure from about 0.1 Torr and about 100 Torr; filling the furnace with an inert gas; and introducing dopant gas into the furnace with a controlled flow so as to form a plurality of stratified layers wherein each layer has dopant concentration different from a layer directly below and a layer directly above it. A 4H-SiC crystal made by the method. A 4H-SiC substrate cut from the SiC crystal made from the method. 111-. (canceled)12. An SiC crystal comprising:a seed crystal;a plurality of deposited layers formed over the seed crystal, each of the deposited layers having an average dopant concentration that is different from a layer directly below it or a layer directly above it; and{'sup': 15', '3', '19', '3, 'a bulk layer over the plurality of deposited layers, the bulk layer having dopant concentration from 1×10/cmto 1×10/cm; and,'}wherein the plurality of deposited layers alternate between low doping and high doping, such that a low doped layer is grown over a high doped layer and a high doped layer is grown over a low doped layer.13. The SiC crystal of claim 12 , wherein the dopant comprises nitrogen.14. The SiC crystal of claim 12 , wherein the dopant comprises one of Boron claim 12 , (B) claim 12 , Phosphorus (P) and Aluminum (Al).15. The SiC crystal of claim 12 , wherein a first layer of the plurality of deposited layers is formed directly on the seed crystal and has a thickness of 0.1 μm to 1 claim 12 ,000 μm claim 12 , and has a first average dopant concentration of 0.9 to 10 times an average dopant concentration of the seed crystal.16. The ...

SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal. 1. A graphite container for use in a furnace for performing SiC crystal growth on a disk-shaped seed having a known diameter , comprising:a graphite cylindrical container having a sidewall and an open top configured for accepting a graphite lid;a cylindrical shelf formed on an upper part of the sidewall and having an interior diameter slightly smaller than the diameter of the seed, the cylindrical shelf being formed at a defined distance below the open top, thereby enabling placing and supporting the seed thereupon;a graphite lid configured for forming a closure with the open top.2. The graphite container of claim 1 , wherein the cylindrical shelf is formed integrally with the sidewall.3. The graphite container of claim 1 , wherein the cylindrical shelf is formed as a ring of graphite bonded to the sidewall.4. The graphite container of claim 1 , further comprising means for preventing the seed from contacting the lid.5. The graphite container of claim 1 , further comprising at least one cushion ring having a diameter slightly smaller than the diameter of the seed and configured for placement below or above the seed.6. The graphite container of claim 5 , wherein the at least one cushion ring comprises molybdenum or graphite.7. The graphite ...

SIC CRYSTAL WITH LOW DISLOCATION DENSITY

A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system. 1. A reaction cell suitable for SiC crystal growth by physical vapor transport using a seed having a given diameter , comprising:a graphite container shaped as a right angle cylinder having an interior diameter which is slightly larger than the diameter of the seed and having a shelf on an interior sidewall of the graphite container with an inner diameter which is slightly smaller than the diameter of the seed, such that the seed can be placed on the shelf;a graphite lid defining a volume between the lid and an exposed back surface of the seed when the seed is placed on the shelf;flow channels configured for directing gas flow from a periphery of the seed to the volume.2. The reaction cell of claim 1 , further comprising an evacuation path configured for allowing a vapor flux to pass through the lid.3. The reaction cell of claim 1 , further comprising a retainer ring configured to fit above the shelf over the seed claim 1 , and wherein the gas flow channels are provided on the retainer ring.4. The reaction cell of claim 3 , wherein the retainer ring is formed integrally with the lid.5. The reaction cell of claim 3 , further comprising a second retainer ring configured to fit above the shelf below the seed claim 3 , and wherein additional gas flow channels are provided on the second retainer ring.6. The reaction cell of claim 2 , wherein the lid comprises gas evacuation holes.7. The reaction cell of claim 1 , wherein the container has internal diameter slightly smaller than that of the seed claim 1 , and wherein an upper section of the container is made to have an internal diameter larger ...

APPARATUS AND PROCESS FOR CRYSTAL GROWTH

The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers. 120-. (canceled)21. A process for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising:(i) providing an apparatus for crystal growth, the apparatus comprising:at least one source chamber;a plurality of growth chambers surrounding the at least one source chamber; anda plurality of passages adapted for transport of vapour from the source chamber to the growth chambers wherein the at least one source chamber is thermally decoupled from the growth chambers,wherein the passages for transport of vapour deviate by an angle of at least 30° to 180° along the length thereof between source and growth chambers thereby providing the thermal decoupling between the source and growth chambers;(ii) placing a source material comprising cadmium telluride in the at least one source chamber; and(iii) transporting vapour phase material between the source chamber and the plurality of growth chambers,to form cadmium telluride single crystals in the plurality of growth chambers.22. A process as claimed in wherein the source material further comprises a dopant selected from chlorine claim 21 , indium claim 21 , copper claim 21 , or zinc.23. A process as claimed in wherein the apparatus further comprises a device to control the flow rate into the growth chambers.24. A process as claimed in wherein each growth chamber of the apparatus comprises a growth tube containing a seed crystal.25. A process as claimed in wherein each seed crystal is supported on a pedestal.26. A process as claimed in wherein the length of the pedestal in at least one growth chamber is different ...

METHOD OF MAKING PHOTONIC CRYSTAL

A method of making a photonic crystal includes step 1 providing a seed, followed by etching a surface of the seed to form thereon submicron voids; step 2 providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder; step 3 placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber; step 4 forming a thermal field in the growth chamber with a heating device to sublime the raw material; and step 5 controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal. 1. A method of making a photonic crystal , the method comprising:step 1: providing a seed, followed by etching a surface of the seed to form thereon submicron voids;step 2: providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder;step 3: placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber;step 4: forming a thermal field in the growth chamber with a heating device to sublime the raw material by controlling the thermal field in a manner to position the seed holder at a relatively cool end of the thermal field and position the raw material at a relatively hot end of the thermal field; andstep 5: controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal,wherein, in step 5, the submicron voids are subjected to a locally high temperature such that crystals at the bottom of the submicron voids sublime, thereby increasing a depth of the submicron voids, and then gas molecules ...

Preparation apparatus for uniform silicon carbide crystals

A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained. 1. A preparation apparatus for silicon carbide crystals , comprising:a circular cylinder, wherein a surface of the circular cylinder is a metal carbide material, and a bottom of the circular cylinder comprises a first cluster of plural pores, and wherein each of the first cluster of plural pores penetrates through the bottom of the circular cylinder;a doping tablet, comprising a dopant and an excipient, wherein the doping tablet is disposed on an interior of the circular cylinder and contacted to the first cluster of plural pores; anda plate, wherein a surface of the plate is a metal carbide material, disposed on a top of the doping tablet, comprising a second cluster of plural pores contacted to the doping tablet, and a plural of distribution locations of the second cluster of plural pores being the same as the first cluster of plural pores.2. The preparation apparatus for silicon carbide crystals of claim 1 , wherein a plurality of pore diameters of the first cluster of plural pores and the second cluster of plural pores are from 1 to 10 mm.3. The preparation apparatus for silicon carbide crystals of claim 1 , wherein a thickness of the plate is from 1 to 10 mm.4. The preparation apparatus for silicon carbide crystals of claim 1 , wherein the dopant is a vanadium compound and the excipient is an expanded graphite powder.5. The preparation apparatus for silicon carbide crystals of claim 1 , wherein a height of the circular cylinder is from 20 to 200 mm.6. The preparation apparatus for silicon carbide crystals of claim 1 , wherein the metal carbide material is tantalum ...

APPARATUS AND METHOD FOR BULK VAPOUR PHASE CRYSTAL GROWTH

A vapour conduit for use in an apparatus for bulk vapour phase crystal growth, an apparatus for bulk vapour phase crystal growth, and a process for bulk vapour phase crystal growth are described. The vapour conduit is a flow conduit defining a passage means adapted for transport of vapour from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapour flow downstream of the flow restrictor away from a longitudinal centre line of the conduit and for example towards an edge of the conduit. 1. A vapour conduit for use in an apparatus for bulk vapour phase crystal growth comprising:a flow conduit defining a passage means adapted for transport of vapour from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapour flow downstream of the flow restrictor away from a longitudinal centre line of the conduit.2. The vapour conduit in accordance with claim 1 , wherein the flow director comprises a formation located within the flow path of the flow conduit being at least one of structured and positioned in the flow path such as to produce a modified downstream vapour flow so modified that peak vapour flow is directed away from a longitudinal centre line of the conduit.3. The vapour conduit in accordance with claim 1 , wherein the flow director comprises a formation structured to tend to guide or direct vapour flow away from a longitudinal centre line of the conduit and/or to restrict vapour flow along a longitudinal centre line of the conduit.4. The vapour conduit in accordance with claim 1 , wherein the flow director comprises an apertured formation structured to direct vapour flow downstream of the flow restrictor in a direction ...

GAS-SUPPLY SYSTEM AND METHOD

A gas-supply system includes a gas container filled with gas, a gas flow controller coupled to the gas container via a first tube, and an operation device electrically connected to the gas flow controller. The gas-supply system further includes a pressure transducer installed on a second tube connected to the gas flow controller and configured to generate a pressure signal to the operation device according to the pressure of the gas in the second tube. The operation device is configured to generate a control signal to the gas flow controller according the pressure signal, and the gas flow controller is configured to adjust the flow rate of the gas in the second tube according to the control signal. 1. A gas-supply system , comprising:a gas container filled with gas;a gas flow controller coupled to the gas container via a first tube;an operation device electrically connected to the gas flow controller;a pressure transducer, installed on a second tube connected to the gas flow controller, configured to generate a pressure signal to the operation device according to the pressure of the gas in the second tube,wherein the operation device is configured to generate a control signal to the gas flow controller according to the pressure signal, and the gas flow controller is configured to adjust a flow rate of the gas in the second tube according to the control signal.2. The gas-supply system as claimed in claim 1 , wherein a semiconductor apparatus is coupled to the gas flow controller via the second tube and is configured to receive the gas from the second tube.3. The gas-supply system as claimed in claim 1 , wherein the gas flow controller comprises:a housing disposed on the second tube; anda valve mechanism, disposed in the housing,wherein a position of the valve mechanism in the second tube is adjusted according to the control signal, and the flow rate of the gas is adjusted according to the position of the valve mechanism in the second tube.4. The gas-supply system as ...

APPARATUS FOR FABRICATING INGOT

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material. 1. An apparatus for fabricating an ingot , the apparatus comprising:a crucible to receive a raw material;a holder disposed at an upper portion of the crucible to fix a seed; anda filter part in the crucible,wherein the filter part is spaced apart from a surface of the raw material.2. The apparatus of claim 1 , wherein a first gas room is interposed between the filter part and the holder claim 1 , and a second gas room is interposed between the filter part and the surface of the raw material.3. The apparatus of claim 2 , wherein the raw material is sublimated in the first and second gas rooms.4. The apparatus of claim 1 , wherein the filter part is disposed on the raw material and disposed along an inner wall of the crucible.5. The apparatus of claim 1 , wherein the filter part extends from an upper portion of the raw material in a longitudinal direction of the crucible.6. The apparatus of claim 1 , wherein the filter part is porous.7. The apparatus of claim 1 , wherein the filter part has a thickness in a range of 1 mm to 10 cm.8. The apparatus of claim 1 , wherein the filter part is a membrane.9. The apparatus of claim 8 , wherein the membrane is a carbon-based membrane.10. The apparatus of claim 1 , wherein the filter part has a fibrous structure.11. The apparatus of claim 1 , wherein the filter part comprises a first layer and a second layer on the first layer.12. The apparatus of claim 11 , wherein a pore of the first layer has a size different from a size of a pore of the second layer.13. The apparatus of claim 11 , wherein a pore of the first layer has a size greater than a size of a pore of the second layer.14. The apparatus of claim 1 , further comprising an auxiliary filter ...

Dislocation distribution for silicon carbide crystalline materials

Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.

METHOD FOR PRODUCING BULK SILICON CARBIDE BY SUBLIMATION OF A SILICON CARBIDE PRECURSOR PREPARED FROM SILICON AND CARBON PARTICLES OR PARTICULATE SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide , comprising: a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a source module that is removable from the lower region of the crucible and prepared outside of the crucible, the source module including a substantially solid silicon carbide precursor; and', 'd) a silicon carbide seed positioned in the upper region of the crucible, the silicon carbide seed having a top surface and a bottom surface, the bottom surface facing the substantially solid silicon carbide precursor;, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprisingii) after inserting the source module in the lower region of the crucible, heating the hot zone with the heating element to sublimate the substantially solid silicon carbide precursor included in the source module;iii) forming silicon carbide on the bottom surface of the silicon carbide seed; andiv) removing the source module including the sublimated substantially solid silicon carbide precursor.2. The method of claim 1 , wherein the substantially solid silicon carbide ...

SILICON CARBIDE CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD THEREOF

A silicon carbide crystal growing apparatus includes a physical vapor transport unit and an atomic layer deposition unit. The physical vapor transport unit has a crystal growing furnace configured to grow a silicon carbide crystal in an internal space of the crystal growing furnace. The atomic layer deposition unit is coupled to the crystal growing furnace and configured to perform an atomic doping operation on the silicon carbide crystal. A silicon carbide crystal growing method is also provided. 1. A silicon carbide crystal growing apparatus , comprising:a physical vapor transport unit having a crystal growing furnace configured to grow a silicon carbide crystal in an internal space of the crystal growing furnace;an atomic layer deposition unit, coupled to the crystal growing furnace, and configured to perform an atomic doping operation on the silicon carbide crystal.2. The silicon carbide crystal growing apparatus according to claim 1 , wherein the atomic layer deposition unit uses the crystal growing furnace as a chamber.3. The silicon carbide crystal growing apparatus according to claim 2 , wherein the atomic layer deposition unit does not have another chamber.4. The silicon carbide crystal growing apparatus according to claim 1 , further comprising a gas channel configured to connect the internal space and the atomic layer deposition unit.5. The silicon carbide crystal growing apparatus according to claim 4 , wherein the physical vapor transport unit comprises a pump configured to perform a negative pressurizing operation in the internal space.6. The silicon carbide crystal growing apparatus according to claim 5 , further comprising a butterfly valve configured to control the pressure in the internal space.7. The silicon carbide crystal growing apparatus according to claim 1 , wherein the silicon carbide crystal is a semi-insulating silicon carbide crystal or an N-type silicon carbide crystal.8. The silicon carbide crystal growing apparatus according to claim ...

METHOD FOR DEPOSITING LOW TEMPERATURE PHOSPHOROUS-DOPED SILICON

Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor. 1. A method for epitaxially growing a phosphorous-doped silicon layer comprising:providing a substrate comprising a monocrystalline silicon surface in a reactor chamber; and,introducing disilane, phosphine, and a carrier gas into the reactor chamber while maintaining the reaction chamber at a temperature of at least 350.0° C. to at most 450.0° C. and at a pressure of at least 10,600 Pa to epitaxially grow a phosphorous doped silicon layer on the monocrystalline silicon surface, wherein the carrier gas consists of nitrogen and/or one or more noble gasses.2. The method according to claim 1 , wherein the reaction chamber is maintained at a temperature of at least 370° C.3. The method according to claim 2 , wherein the reaction chamber is maintained at a temperature of at least 400° C.4. The method according to claim 1 , wherein the reaction chamber is maintained at a temperature of at most 420° C.5. The method according to claim 1 , wherein the reaction chamber is maintained at a pressure of at least 13 claim 1 ,300 Pa.6. The method according to claim 5 , wherein the reaction chamber is maintained at a pressure of at least 20 claim 5 ,000 Pa.7. The method according to claim 1 , wherein the reaction chamber is maintained at a pressure of at most 100 claim 1 ,000 Pa.8. The method according to claim 1 , wherein the disilane is provided to the reactor chamber at a disilane flow rate claim 1 , wherein the phosphine is provided to the reactor chamber at a phosphine flow rate claim 1 , wherein the phosphine flow rate divided by the disilane flow rate equals a phosphine disilane flow rate ratio claim 1 , and wherein the phosphine disilane flow rate ratio is from at least 0.5 to at most 1.4.9. The method according to claim 8 , wherein the phosphine ...

SiC Single Crystal Sublimation Growth Apparatus

A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal. 1. A physical vapor transport growth system comprising:a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation; andan envelope that is at least partially gas-permeable disposed in the growth chamber and separating the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal, said gas-permeable envelope formed of a material that is reactive to vapor generated by sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment, wherein said gas-permeable envelope is positioned in the growth chamber such that the vapor generated by sublimation growth reacts with the material forming the envelope to produce a C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.2. The system of claim 1 , wherein the envelope is comprised of:a sleeve that surrounds sides of the SiC seed crystal and the growing SiC single crystal; anda gas-permeable membrane disposed between the SiC source material and a surface of the SiC seed crystal that faces the SiC source material.3. The system of claim 2 , wherein the sleeve is disposed between 0.5 mm and 5 ...

METHODS AND APPARATUSES FOR CRYSTAL GROWTH

The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown. 1. A method for crystal growth , comprising:placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth;executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport;determining whether a preset condition is satisfied during the growth of the crystal; andin response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material.2. The method of claim 1 , wherein the target source material or the candidate source material includes a block material.3. The method of claim 2 , wherein a shape of the block material includes a cube claim 2 , a cuboid claim 2 , or an irregular block.4. The method of claim 2 , wherein a thickness of the block material is less than a preset thickness threshold.5. The method of claim 2 , wherein a thickness of the block material is 30 millimeters˜40 millimeters.6. The method of claim 1 , wherein the target source material and/or the candidate source material are prepared through a processing process claim 1 , the processing process including:preparing the target source material and/or the ...

METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL INGOT AND APPARATUS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL INGOT

A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. 1. A process for growing a SiC single crystal ingot , which comprises:(1) loading SiC (silicon carbide) and a dopant coated with a carbon-based material to a reaction vessel mounted with a seed crystal; and(2) growing a SiC single crystal ingot on the seed crystal.2. The process of claim 1 , wherein the carbon-based material is carbon black claim 1 , graphite claim 1 , or a combination thereof.3. The process of claim 1 , wherein the dopant coated with a carbon-based material is prepared by drying; curing; carbonization or graphitization; and pulverization of a composition comprising a carbon-containing polymer resin claim 1 , a solvent claim 1 , and a dopant.4. The process of claim 3 , wherein the carbon-containing polymer resin comprises at least one selected from the group consisting of phenolic resins claim 3 , polyacrylamide resins claim 3 , and thermosetting resins.5. The process of claim 3 , wherein the drying is carried out in a temperature range of 50° C. to 350° C. claim 3 , and the curing is ...

Growing Method and Device for Group 13 Element Nitride Crystal

A group 13 element source, a flux comprising at least one of an alkali metal and an alkaline earth metal, and an additive being liquid at an ambient temperature are placed in a crystal growing vessel. The crystal growing vessel is heated and pressurized under a nitrogen atom-containing gas atmosphere to form a melt containing the group 13 element source, the flux and the additive. Evaporation of the additive is prevented until the flux is melted. The crystal of the nitride of the group 13 element is then grown in the melt. 1. A method of producing a crystal of a nitride of a group 13 element , said method comprising:placing a group 13 element source, a flux comprising at least one of an alkali metal and an alkaline earth metal, and an additive being liquid at an ambient temperature in a crystal growing vessel; andheating and pressurizing said crystal growing vessel under a nitrogen atom-containing gas atmosphere to form a melt containing said group 13 element source, said flux and said additive,wherein evaporation of said additive is prevented by a shielding object comprising said flux until said flux is melted and then said crystal of said nitride of said group 13 element is grown in said melt.2. The method of claim 1 , wherein said shielding object constitutes at least a part of a container storing said additive.3. The method of claim 2 , wherein the whole of said container is formed by said shielding object.4. The method of claim 2 , wherein said container comprises a main body having a storage part storing said additive and a lid comprising said shielding object.5. The method of claim 2 , wherein said container comprises a cylindrical part having a storage part storing said additive and a pair of lids each comprising said shielding object.6. The method of claim 1 , wherein said crystal growing vessel comprises a storage part storing said additive claim 1 , and wherein said shielding object is arranged between said storage part and an inner space of said crystal ...

EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ILLUMINATION DEVICE

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α-AlOsubstrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the α-AlOsubstrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α-AlOsubstrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur. 1. An epitaxial film forming method that uses a sputtering apparatus having a target electrode having a target containing a group III nitride molecule arranged thereon and a substrate holder capable of holding a sapphire substrate toward the target electrode and provided with a heater electrode and a bias electrode , and that epitaxially grows a group III nitride semiconductor thin film by a sputtering method on a sapphire substrate arranged on the substrate holder , the method comprising:arranging the sapphire substrate on the substrate holder; andforming an epitaxial film of the group III nitride semiconductor thin film immediately on the sapphire substrate arranged on the substrate holder by the sputtering method by applying high-frequency power to the target electrode and by applying high-frequency bias power to the bias electrode,wherein in the forming an epitaxial film of the group III nitride semiconductor thin film immediately on the sapphire substrate:the sapphire substrate at a predetermined temperature is maintained by the heater electrode;a group III nitride molecule is emitted from the target ...

APPARATUS FOR MANUFACTURING COMPOUND SINGLE CRYSTAL, METHOD FOR MANUFACTURING COMPOUND SINGLE CRYSTAL, AND GaN SINGLE CRYSTAL

An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%≤(1−V/V)×100<100% and a relationship of 0.0003 Подробнее

SIC-EINKRISTALL AND MANUFACTURING METHOD THEREFOR

Method for producing Ga2O3-based crystal film

Formation of single-crystal silicon carbide

본 발명은 단결정 또는 다결정 형태로 존재할 수 있는, 부조합 증발을 갖는 단-결정 상태의 화합물 바디를 형성시키는 디바이스(10)에 관한 것으로, 상기 디바이스(10)는 상기 바디의 다결정 소스(source) 및 상기 화합물의 단결정 원(germ; 46)이 형성되는 기판(42)을 함유하는 제1챔버(20); 제2챔버(14), 여기서 상기 기판은 상기 2개의 챔버 사이에 배열됨; 상기 기판상에 상기 화합물을 다결정 형태로 증착시킬 수 있는 제2챔버 내에 상기 바디의 가스 전구체를 공급하는 수단(36); 및 상기 다결정 소스의 승화 및 상기 원 상에 상기 화합물의 단-결정 형태로의 증착을 일으키기 위하여 상기 원 온도를 초과하는 온도에서 상기 기판을 유지시키는 가열 수단(26)을 포함한다. The present invention relates to a device (10) for forming a compound body in a single-crystal state with subcombination evaporation, which may be present in monocrystalline or polycrystalline form, wherein the device (10) is a polycrystalline source of the body and A first chamber (20) containing a substrate (42) on which a single crystal source (46) of said compound is formed; A second chamber (14), wherein said substrate is arranged between said two chambers; Means (36) for supplying a gas precursor of the body into a second chamber capable of depositing the compound in polycrystalline form on the substrate; And heating means 26 for maintaining the substrate at a temperature above the raw temperature to cause sublimation of the polycrystalline source and deposition of the compound into the mono-crystalline form on the circle. 단결정, 실리콘 탄화물, 디바이스, 다결정 Monocrystalline, Silicon Carbide, Devices, Polycrystalline

Growth of bulk single crystals of aluminum nitride

Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

Method for growing group iii nitride semiconductor crystal and growing device for group iii nitride semiconductor crystal

본 발명에 따른 III족 질화물 반도체 결정의 성장 방법은 이하의 공정을 포함하고 있다. 우선, 원료(13)로부터의 열복사를 차단하기 위한 열차폐부(110)를 내부에 포함하는 챔버(101)가 준비된다. 그리고, 챔버(101) 내의, 열차폐부(110)에 대하여 한쪽에 원료(13)가 배치된다. 그리고, 원료(13)를 가열함으로써 승화시키고, 챔버(101) 내의 열차폐부(110)에 대하여 다른 쪽에, 원료 가스를 석출시킴으로써 III족 질화물 반도체 결정(15)이 성장된다. A method for growing a Group III nitride semiconductor crystal according to the present invention includes the following steps. First, a chamber 101 including therein a heat shielding portion 110 for cutting off heat radiation from the raw material 13 is prepared. The raw material 13 is disposed on one side of the heat shielding portion 110 in the chamber 101. The group III nitride semiconductor crystal 15 is grown by sublimating the raw material 13 by heating and precipitating the source gas to the other side of the heat shielding portion 110 in the chamber 101.

Method of high quality silicon carbide crystal growth

본 개시는 SiC 단결정 성장 방법에 관한 것으로 종자정을 반응기 내에 위치시키는 단계; 상기 반응기 내부 온도를 성장 온도 이하로 승온시키는 제1단계; 상기 승온된 반응기를 대기압 (760torr)에서 성장 압력까지 감압시켜 SiC 단결정을 초기 성장시키는 제2단계; 및 상기 반응기의 온도 및 압력을 유지하여 SiC 단결정을 성장시키는 제3단계를 포함하고, 상기 제2단계에서 불활성 가스에 대한 질소 가스 주입비 (N 2 /(N 2 +Ar))를 0.15 미만으로 하는, SiC 단결정 성장 방법에 관한 것이다. The present disclosure relates to a method for growing a SiC single crystal, comprising: placing a seed crystal in a reactor; a first step of raising the temperature inside the reactor below the growth temperature; a second step of initially growing a SiC single crystal by reducing the temperature of the reactor from atmospheric pressure (760 torr) to a growth pressure; and a third step of growing a SiC single crystal by maintaining the temperature and pressure of the reactor, wherein the nitrogen gas injection ratio (N 2 /(N 2 +Ar)) to the inert gas in the second step is set to less than 0.15. It relates to a SiC single crystal growth method.

Method for producing silicon carbide ingot and silicon carbide ingot produced thereby

本发明涉及碳化硅锭的制造方法、碳化硅锭制造系统及由此制成的碳化硅锭，其中，在碳化硅锭的制造步骤中，在正式生长锭的步骤中，设置在反应容器的内部向外部方向具有倾斜角的引导件，并以规定速度移动加热机构，从而根据锭的生长来改变反应容器的内部的温度分布。

Manufacturing method of silicon carbide ingot, silicon carbide wafer and manufacturing method of silicon carbide wafer

The present invention relates to a silicon carbide ingot and silicon carbide wafer mechanical properties such as converted elastic modulus, hardness, and the like by controlling the flow rate of the inert gas and thermal properties of a reaction vessel during a silicon carbide ingot manufacturing process. In addition, the silicon carbide ingot and wafer has good quality and reduced defect values such as dislocation density and the like.

Crucible, apparatus, and method for producing silicon carbide single crystals

본 발명은, 결정성이 양호한 탄화규소 단결정 잉곳을 높은 수율로 안정적으로 성장시킬 수 있는 탄화규소 단결정 제조용 도가니 및 탄화규소 단결정의 제조 장치 및 제조 방법을 제공하는 것으로, 탄화규소 원료를 수용하는 도가니 용기와 종결정이 장착되는 도가니 덮개를 갖고, 도가니 용기 내의 탄화규소 원료를 승화시켜 종결정 상에 탄화규소의 승화 가스를 공급하여, 종결정 상에서 탄화규소 단결정을 성장시키는 탄화규소 단결정 제조용 도가니이고, 도가니 용기와 도가니 덮개에는 서로 나사 끼워 맞춤되는 나사부가 설치되어 있는 동시에, 이들 나사부의 상대적 회전에 의해 유량 조정 가능한 승화 가스 배출 홈이 형성되어 있는 탄화규소 단결정 제조용 도가니이고, 또한 이러한 도가니를 구비한 탄화규소 단결정의 제조 장치 및 이 장치를 사용한 탄화규소 단결정의 제조 방법이다. The present invention provides a crucible for producing silicon carbide single crystal and a method for producing silicon carbide single crystal and a method for producing a silicon carbide single crystal capable of stably growing a silicon carbide single crystal ingot with good crystallinity, and a crucible container containing a silicon carbide raw material. And a crucible for manufacturing a silicon carbide single crystal having a crucible cover on which a seed crystal is mounted, subliming silicon carbide raw material in the crucible container, supplying a sublimation gas of silicon carbide on the seed crystal, and growing a silicon carbide single crystal on the seed crystal. The crucible for producing silicon carbide single crystal is provided in the container and the crucible cover with screw parts which are screw-fitted to each other, and is formed with a sublimation gas discharge groove whose flow rate is adjustable by the relative rotation of these screw parts. Single crystal manufacturing apparatus and using this apparatus It is a method for producing a silicon carbide single crystal.

Apparatus for fabricating ingot

실시예에 따른 잉곳 제조 장치는, 원료를 수용하는 도가니; 및 상기 도가니는 서로 반대되는 상부 및 하부를 포함하고, 상기 상부 및 하부 각각에 위치하는 종자정 홀더를 포함한다.

Single crystal manufacturing apparatus and manufacturing method

Multilayer substrate structure

다중층 기판 구조물은 기판, 기판 상에 형성되는 열 매칭 층, 상기 열 매칭 층 위의 격자 매칭 층을 포함한다. 열 매칭 층은 몰리브덴, 몰리브덴-구리, 멀라이트, 사파이어, 그래파이트, 알루미늄-산질화물들, 실리콘, 실리콘 탄화물, 아연 산화물들 및 희토류 산화물들 중 적어도 하나를 포함한다. 격자 매칭 층은 합금을 형성하도록 제 1 화학 원소 및 제 2 화학 원소를 포함한다. 제 1 및 제 2 화학 원소는 유사한 결정 구조들 및 화학적 특성들을 갖는다. 열 매칭 층의 열 팽창 계수와 격자 매칭 층의 격자 파라미터 둘 다는 III-V족 화합물 반도체의 일원(member)의 것과 대략 동일하다. 격자 매칭 층의 격자 상수는 III-V족 화합물 반도체의 일원의 것과 대략 동일하다. 격자 매칭 층 및 열 매칭 층은 측방향 제어 셔터를 이용하여 기판 상에 성막될 수 있다.

MIIIN based materials and methods and apparatus for producing same

A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal M III N layer thereon. The template material is removed, thereby providing a free-standing, single-crystal M III N article having a diameter of approximately 0.5 inch or greater and a thickness of approximately 50 microns or greater.

Method for producing Ga2O3-based crystal film

ＭＢＥ法を用いて、n型導電性を高精度に制御しつつＧａ 2 Ｏ 3 系結晶膜をＧａ 2 Ｏ 3 系結晶基板上にエピタキシャル成長させる。 ＭＢＥ法を用いて、エピタキシャル成長により導電性を有するＧａ 2 Ｏ 3 系結晶膜を形成するＧａ 2 Ｏ 3 系結晶膜の製造方法であって、Ｇａ蒸気及びＳｎ蒸気を発生させ、分子線としてＧａ 2 Ｏ 3 系結晶基板の表面に供給してＳｎを含むＧａ 2 Ｏ 3 系単結晶膜を成長させる工程を含み、ＭＢＥ装置のセルに充填された酸化Ｓｎを加熱することにより前記Ｓｎ蒸気を発生させる、Ｇａ 2 Ｏ 3 系結晶膜の製造方法を提供する。 An MBE method is used to epitaxially grow a Ga 2 O 3 based crystal film on a Ga 2 O 3 based crystal substrate while controlling the n-type conductivity with high accuracy. A method for producing a Ga 2 O 3 based crystal film for forming a Ga 2 O 3 based crystal film having conductivity by epitaxial growth using MBE, wherein Ga vapor and Sn vapor are generated, and Ga 2 as a molecular beam Supplying the surface of the O 3 crystal substrate to grow a Ga 2 O 3 single crystal film containing Sn, and heating the Sn oxide filled in the cell of the MBE apparatus to generate the Sn vapor. A method for producing a Ga 2 O 3 based crystal film is provided.

M'N-based material generating apparatus and method

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal M<III>N columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.

High-purity semi-insulating silicon carbide crystal growth device and method thereof

本发明高纯半绝缘碳化硅晶体生长装置及其方法，高纯半绝缘碳化硅晶体生长装置包括生长坩埚；生长坩埚底部插有气管；生长坩埚顶部设置有生长坩埚盖；生长坩埚内部放置有碗状结构的原料坩埚；原料坩埚上部设置有挡板；原料坩埚底部设置有环状支撑的原料坩埚底脚；原料坩埚底脚的直径为原料坩埚直径的1/8；原料坩埚底脚上设置有均匀分布的8个～36个气孔。本发明的高纯半绝缘碳化硅晶体生长装置采用特殊材质的原料坩埚，避免碳化硅原料与石墨直接接触，使得碳化硅原料与生长坩埚隔离，避免生长坩埚及保温层中带N，B等杂质进入原料，避免了生长过程引入杂质，且原料坩埚和生长坩埚可以重复回收利用，大大降低了生产成本。

Apparatus and method for fabricating single crystal

실시예에 따른 단결정 성장 장치는, 원료를 장입하는 도가니; 상기 도가니의 상부에 위치하고, 종자정을 고정하는 홀더를 포함하고, 상기 도가니는 원료 수용부와 가스 룸(gas room)을 포함하고, 상기 가스 룸의 제 1 측벽 두께와 제 2 측벽 두께는 서로 다르다. A single crystal growing apparatus according to an embodiment includes: a crucible for charging a raw material; Wherein the crucible includes a raw material accommodating portion and a gas room, wherein a thickness of the first sidewall of the gas chamber and a thickness of the second sidewall of the crucible are different from each other .

Apparatus and process for continuous vapor deposition of a thin film layer on a sublimated source material

本发明涉及用于衬底上的薄膜层的连续沉积的气相沉积设备和方法，具体而言，提供了用于将升华的源材料在光伏(PV)模块衬底上气相沉积成薄膜的一种设备及相关方法。容器设置在真空头部室内并构造成用于容纳源材料。加热的分配歧管设置在容器下方，并包括通过其中限定的多个通道。容器由该分配歧管间接加热至足以使容器内的源材料升华的程度。钼分配板设置在分配歧管下方，并位于被输送通过该设备的衬底的水平平面上方限定距离处。钼分配板包括通过其中的孔的图案，这些孔进一步将通过分配歧管的升华的源材料分配到下面的衬底的上表面上。该钼分配板包括按重量计大于大约75％的钼。

Vapor phase growth apparatus, method for manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus

Molecular beam epitaxy (MBE) growth apparatus for zinc oxide crystal and manufacturing method using the same

Method for growing group iii nitride semiconductor crystal and growing device for group iii nitride semiconductor crystal

A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.

Apparatus for growing HgI2 crystals

A method and horizontal furnace for vapor phase growth of HgI 2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

Semiconductor processing parts having apertures with deposited coatings and methods for forming the same

Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

Silicon carbide single crystal growth equipment with carbon-silicon ratio adjusting function in growth atmosphere

本发明申请公开了一种具有生长气氛中碳硅比例调节功能的碳化硅单晶生长设备，包括石英管、感应线圈和石墨坩埚，所述石墨坩埚包括碳化硅粉末加热区、生长腔室和籽晶托，所述碳化硅粉末加热区与所述生长腔室之间还设有第二盖板和第三盖板，所述碳化硅粉末加热区底部设有穿过碳化硅粉末的竖直气管。本发明申请的技术方案采用石墨坩埚底部结构和多盖板相配合的结构，实现了对碳化硅粉末加热区的多空间分隔，改变了碳化硅粉末升华后气体组分的输出路径，使得升华气体多次通过碳化硅粉末并形成持续大循环，使得碳化硅粉末得到多次重复加热，协调富硅组分和富碳组分气体的升华速度，进而获得高质量的碳化硅单晶。

Crucible, apparatus, and method for producing silicon carbide single crystals

Apparatus and method for crystal growth

Superconducting compounds and methods for making the same

一種超導製品包括基板及在該基板上形成之超導金屬氧化物膜。該金屬氧化物膜包括鹼金屬之離子、過渡金屬之離子以及鹼土金屬或稀土金屬之離子。舉例而言，該金屬氧化物膜可包括Rb離子、La離子及Cu離子。該超導金屬氧化物膜對於超導性起始之臨界溫度可為高於250 K，例如，高於室溫。

Atomic flux measurement device

A low-cost and compact atomic flux measurement device is provided for measuring the amount of dissociated atomic flux that are produced by discharge and are emitted from a plasma generation cell into a vacuum camber. The atomic flux measurement device of the present invention includes a counter electrode body including a pair of first and second sheet-like electrodes that are arranged substantially parallel to each other with a predetermined spacing between them, a direct-current power supply configured for two purposes that are to maintain the first sheet-like electrode at a negative potential so that atoms attached to the inner surface of the sheet-like electrode undergo self-ionization and to apply a direct-current voltage between the first and second sheet-like electrodes so that a current flows between the first and second sheet-like electrodes, and a direct-current ammeter configured to measure a current flowing due to electrons emitted by the self-ionization of the dissociated atoms attached to the inner surface of the first sheet-like electrode.

Method of growing semi-insulating silicon carbide single crystal ingot and apparatus for growing silicon carbide single crystal ingot

One embodiment relates to a method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to an apparatus for growing a SiC single crystal ingot, wherein the apparatus is capable of producing a high-quality SiC single crystal ingot that comprises porous bodies produced via carbonization or graphitization of a SiC composition, and thus has a uniform thickness-based doping concentration even when the diameter of the SiC single crystal ingot is large.

Oxide crystal growth apparatus and fabrication method using the same

A growth apparatus and a method for making a nitrogen (N)-doped oxide crystal grow can be configured to set a nitrogen concentration to a desired concentration and to make the concentration of nitrogen uniform in a depth direction. A nitrogen source gun configured to supply ammonia (NH<SUB>3</SUB>) gas into an ultrahigh vacuum chamber can be arranged on a side of an ultrahigh vacuum chamber that is approximately opposite to a side that includes an exhaust port. A stage can be located between the nitrogen source gun and the exhaust port so as to form a flow path for ammonia that allows ammonia introduced into the ultrahigh vacuum chamber to be quickly exhausted after reaching a ZnO substrate placed on the stage. As a result, accumulation of ammonia in the ultrahigh vacuum chamber can be minimized, so that the nitrogen concentration in a crystal growth layer on the ZnO substrate can be set at a desired concentration and can be made uniform in the depth direction.

Crystals comprising single-walled carbon nanotubes

The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of the first precursor material comprising fullerence molecules and a second precursor material comprising a catalyst, and heating the at least one pillar. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerence molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure.

Silicon carbide single crystal growth control device and control method

本发明提供一种碳化硅单晶生长控制装置，壳体内形成有反应腔室，反应腔室内设有碳化硅籽晶置放位；加热装置设于壳体，用以控制反应腔室的内部温度；固态硅坩埚设有第一开口，以向反应腔室内释放硅蒸气，固态碳坩埚设有第二开口，以向反应腔室内通入碳蒸气；两个压力探测器分别位于固态硅坩埚和固态碳坩埚的上方，以分别监控硅蒸气和碳蒸气的的分压；控制器根据两个压力探测器的反馈，调节第一开口与第二开口的开口度。本发明还提供一种碳化硅单晶生长控制方法。本发明通过调节和控制硅蒸气和碳蒸气的分压之比，以使SiC单晶生长过程中难以控制的碳硅比例变得可控，从而提升SiC单晶的质量及纯度。

Process and apparatus for producing a SiC solid material

Die vorliegende Erfindung bezieht sich auf ein Verfahren zum Herstellen von einem bevorzugt länglichen SiC Festkörper, insbesondere vom Polytyp 3C. Das erfindungsgemäße Verfahren weist dabei bevorzugt zumindest die nachfolgend genannten Schritte auf:Einbringen zumindest eines ersten Quellengases in eine Prozesskammer, wobei das erste Quellengas Si aufweist,Einbringen zumindest eines zweiten Quellengases in die Prozesskammer, wobei das zweite Quellengas C aufweist,elektrische Beaufschlagung eines zumindest eines in der Prozesskammer angeordneten Abscheideelements zum Aufheizen des Abscheideelements,Einstellen einer Abscheiderate von mehr als 200µm/h,wobei durch das Einbringen des ersten Quellengases und/oder des zweiten Quellengases ein Druck in der Prozesskammer von mehr als 1 bar erzeugt wird undwobei die Oberfläche des Abscheideelements auf eine Temperatur im Bereich zwischen 1300°C und 1700°C erhitzt wird. The present invention relates to a method for producing a preferably elongate SiC solid, in particular of polytype 3C. The method according to the invention preferably has at least the following steps: introducing at least one first source gas into a process chamber, the first source gas having Si, introducing at least one second source gas into the process chamber, the second source gas having C, electrical application of at least one separating element arranged in the process chamber for heating the separating element,setting a separating rate of more than 200 µm/h,wherein the introduction of the first source gas and/or the second source gas generates a pressure in the process chamber of more than 1 bar andwherein the surface of the separating element is heated to a temperature in the range between 1300°C and 1700°C.

Single crystal growth method and growth apparatus

Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

本发明涉及控制碳化硅晶体中的氮含量，具体的，涉及在碳化硅升华生长过程中减少氮的引入。本发明通过在生长腔室中提供完全的氢环境气氛来控制生长的碳化硅晶体中的氮浓度。从效果上，氢原子可以阻碍，减少或者阻滞氮原子在生长晶体表面上的引入。

Method for manufacturing large-size low-defect silicon carbide single crystal

本发明针对在籽晶接长时发生位错等缺陷大幅增加问题，提供了一种从生长的初期阶段开始显著降低位错密度的SiC单晶的生长方法，从而制造出位错密度从生长初期到末期都较低的SiC单晶。本发明涉及一种碳化硅单晶块的制造方法，其是在由碳化硅单晶形成的籽晶的生长面上使用升华再结晶法使碳化硅单晶生长而制造碳化硅单晶块的方法，其中，在晶体生长初期，采用1200℃‑2000℃的温度范围，保持10分钟以上，之后，控制压力在100 Pa到10Kpa之间，保持炉体压力恒定，向生长炉内通入一定流量的碳氢气体，使籽晶表面以小于50μⅿ/h的速度同质生长，生长一段时间之后，以一定的速度将温度和压力调节至常规生长条件，获得目标厚度的SiC单晶锭。

Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method

The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.

Method and device for producing a sic solid material

本發明關於一種製造較佳為長形SiC固體，尤其是多型3C之方法。本發明之方法較佳為包含至少以下步驟： 將至少一種第一來源氣體引入處理室中，該第一來源氣體包含Si； 將至少一種第二來源氣體引入該處理室中，該第二來源氣體包含C； 電激勵至少一個配置在該處理室中的分離器元件而將該分離器元件加熱； 將沈積速率設定為超過200微米/小時， 其中藉由引入該第一來源氣體/該第二來源氣體而在該處理室中產生超過1巴之壓力，及 其中將沈積元件表面加熱到在1300℃至1800℃之間之範圍的溫度。

Manufacturing method and application of single wall carbon nano tube

本发明涉及一种制造单壁碳纳米管的方法，包括步骤：在基底上提供至少一个柱，该柱包括包含富勒烯分子的第一母体材料和包含催化剂的第二母体材料的交替层；以及在第一磁或电场存在的情况下加热至少一个柱。本发明还涉及用于制造单壁碳纳米管的母体布置，此布置在基底上包括至少一个柱，该柱包括包含富勒烯分子的第一母体材料和包含催化剂的第二母体材料的交替层。本发明的第三方面是纳米管的排列，此排列包括基底和其上的至少一个晶体，该晶体包含一束具有大致等同的取向和结构的单壁碳纳米管。

System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing the same

【課題】物理的気相輸送（ＰＶＴ）によって半導体材料の２つ以上の単結晶を同時に製造するシステムおよび方法を提供すること。【解決手段】ＰＶＴ成長システムは、各反応炉が単一半導体結晶の成長のためのＰＶＴ成長構造を収容するようになされた内側チャンバを有する、複数の反応炉を備え、複数の反応炉のうちの２つ以上の反応炉は、共通の真空チャネルによって互いに接続される。共通の真空チャネルは、接続された反応炉の内側チャンバ内の共通の気相条件を生成および／または制御するための真空ポンプシステムに接続可能である。気相条件は、気相の圧力および／または組成を含み得る。製造された単結晶は、少なくとも炭化けい素、４Ｈ−ＳｉＣ、およびＩＩＩ〜Ｖ族元素の半導体を含む群の半導体材料で作製される。【選択図】図６

Semiconductor processing parts having apertures with deposited coatings and methods for forming the same

Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

Micropipe-free silicon carbide and related method of manufacture

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

A method of controlled n-doping of group iii-v materials grown on (111) si

The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration.

Apparatus for fabricating ingot

Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.

Method for manufacturing silicon carbide single crystal ingot

Atomic flux measurement device

Disclosed is a low-cost compact atomic flux measurement device for measuring flux of dissociated atoms generated by discharge, said flux being emitted from a plasma generation cell into a container. The disclosed atomic flux measurement device is configured with opposing electrodes configured by the pair of a first and a second sheet electrode separated by a prescribed interval and arranged roughly in parallel, a DC power source having two aims, one aim being to maintain the first sheet electrode at a negative potential and cause atoms attached to the inner surface of said sheet electrode to self-ionize, the other aim being to apply a DC voltage in order to create a current between the first and second sheet electrodes, and a DC ammeter which measures the current of the electrons emitted from the dissociated atoms due to self-ionization which are attached to the inner surface of the first sheet electrode.

The cultural method and device of 13 race's element nitride crystals

通过将13族元素源、包含碱金属和碱土金属中的至少一方的助熔剂、及在常温下为液体的添加剂5收纳于结晶培养容器10，在含有氮原子的气体气氛下对结晶培养容器10进行加热、加压，由此生成包含13族元素源、助熔剂及添加剂的熔液14。此时，防止添加剂5蒸发直至助熔剂熔融，使13族元素氮化物结晶在熔液中生长。

System and method for efficiently manufacturing a plurality of high-quality semiconductor single crystals

本发明提供一种用于高效制造多个高质量半导体单晶的系统和方法。具体地，本发明涉及一种用于通过物理气相传输(PVT)同时制造多于一个半导体材料单晶的系统及方法。PVT生长系统包括多个反应器，每个反应器具有用于容纳PVT生长结构以用于生长单个半导体晶体的内腔，以及其中所述多个反应器中的两个或更多个反应器通过公共真空通道彼此连接。所述公共真空通道可连接到真空泵系统，用于在连接的所述两个或更多个反应器的内腔中创建和/或控制公共气相条件。所述气相条件可以包括所述气相的压力和/或组分。制造的单晶由至少包括碳化硅、4H‑SiC和具有III‑V族元素的半导体的组中的半导体材料制成。

Method of growing high-quality single crystal silicon carbide

A method is disclosed of growing an epitaxial layer on a substrate (20) of monocrystalline Silicon Carbide, SiC. The method comprises providing (S100) a source material (10) of monolithic polycrystalline SiC with a columnar micro-grain structure and the substrate (20) of monocrystalline SiC, in a chamber (5) of a crucible with a distance therein between, arranging (S102) a carbon getter (1) in said chamber (5) of the crucible close to the source material (10) and the substrate (20), said carbon getter (1) having a melting point higher than 2200° C and an ability of forming a carbide layer with carbon species evaporated from SiC, reducing (S106) pressure in the chamber (5), inserting (S108) an inert gas into the chamber (5), raising (S110) the temperature in the chamber (5) to a growth temperature, such that a growth rate between 1 µm/h and 1 mm/h, is achieved, and keeping (S112) the growth temperature until a growth of at least 5 µm has been accomplished on the substrate (20).

Apparatus for fabricating ingot

실시예에 따른 잉곳 제조 장치는, 원료를 수용하는 도가니; 및 상기 도가니에 배치되는 보조 발열부를 포함한다.

Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si 1-x Ge x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

silicon carbide powder and method for manufacturing silicon carbide ingot using the same

탄화규소 분말 및 이를 이용하여 탄화규소 잉곳을 제조하는 방법이 개시된다. 탄화규소 분말은 탄소 및 규소를 포함하고, 2차원 이미지 분석을 통하여 측정되는 입자 원형도가 0.4 내지 0.9이다. Disclosed are a silicon carbide powder and a method for manufacturing a silicon carbide ingot using the same. The silicon carbide powder contains carbon and silicon, and particle circularity measured through two-dimensional image analysis is 0.4 to 0.9.

Vapor-phase growth device