30-09-2021 дата публикации
Номер: US20210302839A1
Принадлежит:
Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MRX, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern. 1. A method of manufacturing a semiconductor device , comprising: combining a first precursor and a second precursor in a vapor state to form a photoresist material,', {'br': None, 'sub': a', 'b', 'c, 'MRX'}, 'wherein the first precursor is an organometallic having a formula, 'where M is at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, or Lu,', 'R is a substituted or unsubstituted alkyl, alkenyl, or carboxylate group,', 'X is a halide or sulfonate group, and', '1≤a≤2, b≥1, c≥1, and b+c≤5, and', 'the second precursor is at least one of an amine, a borane, or a phosphine; and', 'depositing the photoresist material over the substrate;, 'forming a photoresist layer over a substrate, comprisingselectively exposing the photoresist layer to actinic radiation to form a latent pattern; anddeveloping the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern.2. The method according to claim 1 , wherein the actinic radiation is extreme ultraviolet radiation.3. The method according to claim 1 , further comprising ...
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